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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Manipulation of orbital occupancy by ferroelectric polarization in LaNiO{sub 3}/BaTiO{sub 3−δ} heterostructures

We investigate the control of orbital occupancy by ferroelectric polarization in LaNiO{sub 3}/BaTiO{sub 3−δ} heterostructures. It is achieved by the ferroelectric displacement of Ti ions polarized downward (upward) to form (break) Ni–O–Ti covalent bonding at the interface, accompanied by charge transfer between them and the modulation of the conductivity of ultrathin LaNiO{sub 3}. This electrically switchable and bi-direction control of orbital polarization in LaNiO{sub 3} is up to 25%, different from the manipulation by epitaxial strain or quantum confinement. Our finding opens a window for electrical control of orbital polarization at an oxide interface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Exceeding 200 ns Lifetimes in Polycrystalline CdTe Solar Cells

CdTe photovoltaics has achieved one of the lowest levelized costs of electricity among all energy sources. However, for decades, carrier lifetimes have been inferior to those of other prevalent solar cell materials. This quality has inhibited common methods to improve solar cell efficiency such as back-surface fields, electron reflectors, or bifacial solar cells. In this work, a significant increase in carrier lifetime to values exceeding 200 ns in fully functional CdTe solar cells is demonstrated. The increased lifetime is achieved by large CdSeTe grains at the absorber/emitter interface, intragrain passivation in the absorber layer, and chemical passivation by forming nanoscale oxidized tellurium species at the transparent conducting oxide interface. The carrier lifetime is correlated to the open-circuit voltage and enables paths for back-surface manipulation and novel cell architectures to further improve CdTe photovoltaic performance.

14 SOLAR ENERGY↗
DOE OSTI2022

The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins

A recently discovered, enhanced Ge diffusion mechanism along the oxidizing interface of Si/SiGe nanostructures has enabled the formation of single-crystal Si nanowires and quantum dots embedded in a defect-free, single-crystal SiGe matrix. Here, we report oxidation studies of Si/SiGe nanofins aimed at gaining a better understanding of this novel diffusion mechanism. Here, a superlattice of alternating Si/Si 0.7 Ge 0.3 layers was grown and patterned into fins. After oxidation of the fins, the rate of Ge diffusion down the Si/SiO 2 interface was measured through the analysis of HAADF-STEM images. The activation energy for the diffusion of Ge down the sidewall was found to be 1.1 eV, which is less than one-quarter of the activation energy previously reported for Ge diffusion in bulk Si. Through a combination of experiments and DFT calculations, we propose that the redistribution of Ge occurs by diffusion along the Si/SiO 2 interface followed by a reintroduction into substitutional positions in the crystalline Si.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Engineered superlattices with crossover from decoupled to synthetic ferromagnetic behavior

The extent of interfacial charge transfer and the resulting impact on magnetic interactions were investigated as a function of sublayer thickness in La 0.7 Sr 0.3 MnO 3 /La 0.7 Sr 0.3 CoO 3 ferromagnetic superlattices. Element-specific soft x-ray magnetic spectroscopy reveals that the electronic structure is altered within 5–6 unit cells of the chemical interface, and can lead to a synthetic ferromagnet with strong magnetic coupling between the sublayers. The saturation magnetization and coercivity depends sensitively on the sublayer thickness due to the length scale of this interfacial effect. For larger sublayer thicknesses, the La 0.7 Sr 0.3 MnO 3 and La 0.7 Sr 0.3 CoO 3 sublayers are magnetically decoupled, displaying two independent magnetic transitions with little sublayer thickness dependence. Lastly, these results demonstrate how interfacial phenomena at perovskite oxide interfaces can be used to tailor their functional properties at the atomic scale.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Impact of electric-field dependent dielectric constants on two-dimensional electron gases in complex oxides

High-density two-dimensional electron gas (2DEG) can be formed at complex oxide interfaces such as SrTiO{sub 3}/GdTiO{sub 3} and SrTiO{sub 3}/LaAlO{sub 3}. The electric field in the vicinity of the interface depends on the dielectric properties of the material as well as on the electron distribution. However, it is known that electric fields can strongly modify the dielectric constant of SrTiO{sub 3} as well as other complex oxides. Solving the electrostatic problem thus requires a self-consistent approach in which the dielectric constant varies according to the local magnitude of the field. We have implemented the field dependence of the dielectric constant in a Schrödinger-Poisson solver in order to study its effect on the electron distribution in a 2DEG. Using the SrTiO{sub 3}/GdTiO{sub 3} interface as an example, we demonstrate that including the field dependence results in the 2DEG being confined closer to the interface compared to assuming a single field-independent value for the dielectric constant. Our conclusions also apply to SrTiO{sub 3}/LaAlO{sub 3} as well as other similar interfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Coherent acoustic phonons in YBa{sub 2}Cu{sub 3}O{sub 7}/La{sub 1/3}Ca{sub 2/3}MnO{sub 3} superlattices

We investigate photo-induced coherent acoustic phonons in complex oxide superlattices consisting of high-Tc superconductor YBa{sub 2}Cu{sub 3}O{sub 7−x} and ferromagnetic manganite La{sub 1/3}Ca{sub 2/3}MnO{sub 3} epitaxial layers with broadband pump-probe spectroscopy. Two oscillatory components have been observed in time-resolved differential reflectivity spectra. Based on the analysis, the slow oscillation mode with a frequency sensitive to the probe wavelength is ascribed to the stimulated Brillouin scattering due to the photon reflection by propagating train of coherent phonons. The fast oscillation mode with a probe-wavelength-insensitive frequency is attributed to the Bragg oscillations caused by specular phonon reflections at oxide interfaces or the electron-coupling induced modulation due to free carrier absorption in the metallic superlattices. Our findings suggest that oxide superlattice is an ideal system to tailor the coherent behaviors of acoustic phonons and to manipulate the thermal and acoustic properties.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Brønsted–Evans–Polanyi relation for CO oxidation on metal oxides following the Mars–van Krevelen mechanism

Scaling relations are widely used to model catalytic reactions on metal surfaces, but they are less commonly applied to metal oxides. Oxygen vacancy formation energies have been suggested as a descriptor for the activity toward oxidation reactions via the Mars-van Krevelen mechanism. However, there is currently no function that maps oxygen vacancy formation energies to CO oxidation barriers. We have compiled a data set for CO oxidation on doped and pristine metal oxide surfaces as well as metal/metal oxide interface sites using density functional theory. Based on this data, we can predict CO oxidation barriers from oxygen vacancy formation energies using a Brønsted–Evans–Polanyi relation with a mean absolute error of 14 kJ/mol. Contrary to what is known for reactions on metal surfaces, we find that the scaling parameter α that describes the lateness of the transition state for CO oxidation on metal oxides is not constant.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

A conductive scanning study of La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/Nb:SrTiO{sub 3} hetero-junction

Basing on conductive atomic force microscopy, we presented a direct conductance mapping for the interface of the La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/Nb:SrTiO{sub 3} hetero-junction. The most remarkable observation is the presence of an interfacial layer in Nb:SrTiO{sub 3} adjacent to the manganite film. Within this layer, the AFM tip/Nb:SrTiO{sub 3} contact shows a current-voltage dependence that strongly deviates from Shockley equation, unlike a Schottky diode. Spatial extension of this layer is explored and possible transport mechanism in or outside this interfacial layer is discussed. The present work gives a direct intuitional image on the interface of manganite junction. The principle proven here can be extended to other complex oxide interfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Interface-induced multiferroism by design in complex oxide superlattices

Interfaces between materials present unique opportunities for the discovery of intriguing quantum phenomena. Here, we explore the possibility that, in the case of superlattices, if one of the layers is made ultrathin, unexpected properties can be induced between the two bracketing interfaces. We pursue this objective by combining advanced growth and characterization techniques with theoretical calculations. Using prototype La 2/3 Sr 1/3 MnO 3 (LSMO)/BaTiO 3 (BTO) superlattices, we observe a structural evolution in the LSMO layers as a function of thickness. Atomic-resolution EM and spectroscopy reveal an unusual polar structure phase in ultrathin LSMO at a critical thickness caused by interfacing with the adjacent BTO layers, which is confirmed by first principles calculations. Most important is the fact that this polar phase is accompanied by reemergent ferromagnetism, making this system a potential candidate for ultrathin ferroelectrics with ferromagnetic ordering. Monte Carlo simulations illustrate the important role of spin–lattice coupling in LSMO. These results open up a conceptually intriguing recipe for developing functional ultrathin materials via interface-induced spin–lattice coupling.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Uranium(IV) Interaction with Aqueous/Solid Interfaces Studied by Nonlinear Optics

Second harmonic generation (SHG) was used to study U(VI) interactions with a buried mineral oxide/water interface using pH 4 uranyl solutions that contained carbonate and environmentally relevant electrolyte concentrations. The results of this work are of value as benchmarks for geochemical transport models of uranium pollution resulting from acid mine drainage and nuclear waste storage. Additionally, the binding contants, adsorption free energies, absolute adsorbate number densities, and interfacial charge densities of Al(III), Sc(III), Y(III), La(III), and Gd(III) interacting with fused silica/water interfaces held at pH 4 were determined using second harmonic generation and the Eisenthal χ(3) technique. By quantifying the exponential sensitivity of the surface coverage of the adsorbed ions to their charge state directly at the fused silica/water interface, we provide benchmarks for theory calculations describing the interactions of metal ions with oxide interfaces in geochemistry and hope to improve the prediction of trivalent metal ion transport through groundwater environments.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2019

Microscopy of Electrostatic Field Effect in Novel Quantum Materials (Final Report)

In this DOE Early Career project “Microscopy of Electrostatic Field Effect in Novel Quantum Materials”, the PI’s group explored the nanoscale electronic properties when charge carriers are electrostatically modulated in functional materials. Using a microwave impedance microscope (MIM), the team probed the spatial evolution of local conductivity in various field-effect transistors (FETs) ranging from traditional metal-oxide-semiconductor FETs, sketched oxide-interface FETs, to ferroelectric FETs and electric double-layer transistors (EDLTs). Specifically, the work has led to a deep understanding on the electrical inhomogeneity and conductive edge channels in atomically thin transition metal dichalcogenides and their heterostructures, which is of fundamental importance for their applications in electronics and photonics. The unique sub-surface imaging capability also enables the first-time report of ferroelectric field effect on Ge substrates due to the polarization switching of an epitaxial BaTiO 3 layer, as well as the visualization of sketched nanostructures in the LaAlO 3 /SrTiO 3 interface. Using a cryogenic MIM, the local channel conductance in ion-gel-gated oxide EDLTs has been successfully imaged, resolving a major challenge in the EDLT research to study electronic fluctuations in the devices. Finally, a new tuning-fork-based MIM has been developed to perform quantitative conductivity imaging on back-gated FETs. The research supported by this DOE grant is significant for understanding the nanoscale uniformity in technologically important materials towards energy applications.

2D materials↗
DOE OSTI2016

ZrO{sub 2} and HfO{sub 2} dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

The electrical properties of ZrO{sub 2} and HfO{sub 2} gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance–voltage (C–V) measurements exhibit a total trap density profile with a minimum of 1 × 10{sup 12 }cm{sup −2} eV{sup −1} and 4 × 10{sup 12 }cm{sup −2} eV{sup −1} for ZrO{sub 2} and HfO{sub 2}, respectively, both of which are comparable to the best values reported for high-κ/III-V devices. Our simulations showed that the measured capacitance is to a large extent affected by the border trap response suggesting a very low density of interface traps. Charge trapping in MOS structures was also investigated using the hysteresis in the C–V measurements. The experimental results demonstrated that the magnitude of the hysteresis increases with increase in accumulation voltage, indicating an increase in the charge trapping response.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Inherent interface defects in thermal (211)Si/SiO{sub 2}:{sup 29}Si hyperfine interaction

Low temperature electron spin resonance (ESR) studies were carried out on ‘higher index’ (211)Si/SiO{sub 2} interfaces thermally grown in the temperature range T{sub ox} = 400–1066°C. The data reveal the presence of two species of a P{sub b}-type interface defect, exhibiting a significant difference in defect density. On the basis of the pertinent ESR parameters and interface symmetry, the basic defect is typified as P{sub b0}{sup (211)}, close to the Pb0 center observed in standard (100)Si/SiO{sub 2}. The dominant type is found to pertain to defected Si atoms at (111)Si-face terraces with the dangling bond along the [111] direction at ∼19.5°C with the interface normal, these sites thus apparently predominantly accounting for interface mismatch adaptation. The total of the P{sub b}-type defect appearance clearly reflects the higher-index nature of the interface. It is found that T{sub ox} = 750°C is required to minimize the P{sub b0}{sup (211)} defect density through relaxation of the oxide (interface). Q-band ESR saturation spectroscopy reveals an anisotropic {sup 29}Si (nuclear spin I=1/2) hyperfine (hf) doublet associated with the central P{sub b0}{sup (211)} Zeeman signal, with hf parameters closest to those of the similar hf structure of the P{sub b0}{sup (110)} defect in thermal (110)Si/SiO{sub 2}, adducing independent support to the P{sub b0}{sup (211)} typification.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Enhanced interfacial ferromagnetism and exchange bias in (111)-oriented LaNiO 3 / CaMnO 3 superlattices

Emergent properties of complex oxide interfaces are based on interface reconstruction that is driven by mismatch of electronic bands, valence states, interaction lengths, and even crystal symmetry of the interface. In particular, emergent ferromagnetism at the interface of two materials that do not exhibit ferro- or ferrimagnetism in the bulk has been stabilized as a result of competing exchange interactions. When LaNiO 3 and CaMnO 3 , which are a paramagnetic metal and antiferromagnetic insulator in the bulk, respectively, are brought together, ferromagnetism emerges at the interface. Here we show that in (111)-oriented LaNiO 3 / CaMnO 3 (LNO/CMO) superlattices, Ni 2+ -Mn 4+ superexchange interactions due to polar mismatch at the LNO/CMO interfaces are responsible for the emergent ferromagnetism. Compared to (001)-oriented LNO/CMO superlattices, (111)-oriented LNO/CMO superlattices exhibit enhanced interfacial ferromagnetism with a T C > 200 K, greater than the bulk antiferromagnetic transition temperature of CaMnO 3 and a saturated magnetic moment enhanced by up to a factor of 3. Furthermore, we observe exchange bias in (111)-oriented superlattices. The strong exchange interactions along the (111) interface, manifest in the enhanced T c and exchange bias, make this class of CMO-based materials with (111)-oriented interfaces good candidates for low-dimensional spin-polarized materials in spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Interfacial Effects of Tin Oxide Atomic Layer Deposition in Metal Halide Perovskite Photovoltaics

Metal halide perovskites offer a wide and tunable bandgap, making them promising candidates for top–cell absorbers in tandem photovoltaics. In this work, the authors aim to understand the atomic layer deposition (ALD) precursor–perovskite interactions of the tin oxide ALD system and the role of organic fullerenes at the perovskite–tin oxide interface while establishing a framework for developing alternative perovskite–compatible ALD processes in the future. It is shown, in the case of tin oxide ALD growth with tetrakis(dimethylamino)tin(IV) and water on FA 0.83 Cs 0.17 Pb(I 0.83 Br 0.17 ) 3 perovskite, that perovskite stability is most sensitive to metal–organic exposure at elevated temperatures with an onset near 110 °C, resulting in removal of the formamidinium cation. Transitioning from ALD to pulsed–chemical vapor deposition tin oxide growth can minimize the degradation effects. Investigation of fullerenes at the perovskite interface shows that thin fullerene layers offer minor improvements to perovskite stability under ALD conditions, but significant enhancement in carrier extraction. Fullerene materials are undesirable due to fabrication cost and poor mechanical stability. Compositional tuning of the perovskite material can improve the fullerene–free device performance. Furthermore, this method is demonstrated with a bromine–rich perovskite phase to enable an 8.2% efficient perovskite device with all–inorganic extraction layers.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Interface effect of Fe and Fe 2 O 3 on the distributions of ion induced defects

The stability of structural materials in extreme nuclear reactor environments—with high temperature, high radiation, and corrosive media—directly affects the lifespan of the reactor. In such extreme environments, an oxide layer on the metal surface acts as a passive layer protecting the metal underneath from corrosion. To predict the irradiation effect on the metal layer in these metal/oxide bilayers, nondestructive depth-resolved positron annihilation lifetime spectroscopy (PALS) and complementary transmission electron microscopy (TEM) were used to investigate small-scale defects created by ion irradiation in an epitaxially grown (100) Fe film capped with a 50 nm Fe 2 O 3 oxide layer. In this study, the evolution of induced vacancies was monitored, from individual vacancy formation at low doses—10 –5 dpa—to larger vacancy cluster formation at increasing doses, showing the sensitivity of positron annihilation spectroscopy technique. Furthermore, PALS measurements reveal how the presence of a metal–oxide interface modifies the distribution of point defects induced by irradiation. TEM measurements show that irradiation induced dislocations at the interface is the mechanism behind the redistribution of point defects causing their accumulation close to the interface. Finally, this work demonstrates that the passive oxide layers formed during corrosion impact the distribution and accumulation of radiation induced defects in the metal underneath and emphasizes that the synergistic impact of radiation and corrosion will differ from their individual impacts.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Quasi 2D Ultrahigh Carrier Density in a Complex Oxide Broken Gap Heterojunction

Two-dimensional (2D) ultra-high carrier densities at complex oxide interfaces are of considerable current research interest for novel plasmonic and high charge-gain devices. However, the highest 2D electron density obtained in oxide heterostructures is thus far limited to 3×1014 cm-2 (½ electron/unit cell/interface) at GdTiO3/SrTiO3 interfaces, and is typically an order of magnitude lower at LaAlO3/SrTiO3 interfaces. Here we show that carrier densities much higher than 3×1014 cm-2 can be achieved via band engineering. Transport measurements for 3 nm SrTiO3/t u.c. NdTiO3/3 nm SrTiO3/LSAT (001) show that charge transfer significantly in excess of the value expected from the polar discontinuity model occurs for higher t values. The carrier density remains unchanged, and equivalent to ½ electron/unit cell/interface for t < 6 unit cells. However, above a critical NdTiO3 thickness of 6 u.c., electrons from the valence band of NdTiO3 spill over into the SrTiO3 conduction band as a natural consequence of the band alignment. An atomistic model consistent with first-principle calculations and experimental results is proposed for the charge transfer mechanisms. These results may provide an exceptional route to the realization of the room-temperature oxide electronics.

Environmental Molecular Sciences Laboratory↗