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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Theoretical study on electromagnetically induced transparency in molecular aggregate models using quantum Liouville equation method

Electromagnetically induced transparency (EIT), which is known as an efficient control method of optical absorption property, is investigated using the polarizability spectra and population dynamics obtained by solving the quantum Liouville equation. In order to clarify the intermolecular interaction effect on EIT, we examine several molecular aggregate models composed of three-state monomers with the dipole-dipole coupling. On the basis of the present results, we discuss the applicability of EIT in molecular aggregate systems to a new type of optical switch.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Solution-processed PCDTBT capped low-voltage InGaZnO{sub x} thin film phototransistors for visible-light detection

The effects of visible-light detection based on solution processed poly[N-9′′-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′, 3′benzothiadiazole) (PCDTBT) capped InGaZnOx (IGZO) phototransistors with Al{sub 2}O{sub x} serving as gate dielectric are investigated in this paper. The high-k dielectric is used to lower the device operating voltage down to 2 V. Photons emitted from laser sources with the wavelengths (λ) of 532 nm and 635 nm are absorbed through the layer of PCDTBT to generate electron-hole-pairs (EHPs). After the separation of EHPs, electrons are injected into IGZO layer through the p-n junction formed between the IGZO (n-type semiconductor) and the PCDTBT (p-type semiconductor). The photo-generated carriers boost the drain current of the transistors as well as bring about the negative threshold voltage shift. Significant enhanced detection performance is achieved under the laser wavelength of 532 nm. The highest photoresponsivity reaches up to 20 A/W, while the photoresponse rise time comes to 10 ms and the fall time comes to approximate 76 ms, which is much faster than trap assisted IGZO visible light detection. The fabricated phototransistors favor the application of visible-light detectors and/or optical switches.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Control of optical bistability and third-order nonlinearity via tunneling induced quantum interference in triangular quantum dot molecules

The optical bistability of a triangular quantum dot molecules embedded inside a unidirectional ring cavity is studied. The type, the threshold and the hysteresis loop of the optical bistability curves can be modified by the tunneling parameters, as well as the probe laser field. The linear and nonlinear susceptibilities of the medium are also studied to interpret the corresponding results. The physical interpretation is that the tunneling can induce the quantum interference, which modifies the linear and the nonlinear response of the medium. As a consequence, the characteristics of the optical bistability are changed. The scheme proposed here can be utilized for optimizing and controlling the optical switching process.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Optically switchable photonic metasurfaces

We experimentally demonstrate an optically switchable gallium-based metasurface, in which a reversible light-induced transition between solid and liquid phases occurring in a confined nanoscale surface layer of the metal drives significant changes in reflectivity and absorption. The metasurface architecture resonantly enhances the metal's “active plasmonic” phase-change nonlinearity by an order of magnitude, offering high contrast all-optical switching in the near-infrared range at low, μW μm{sup −2}, excitation intensities.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Similar ultrafast dynamics of several dissimilar Dirac and Weyl semimetals

We report that recent years have seen the rapid discovery of solids whose low-energy electrons have a massless, linear dispersion, such as Weyl, line-node, and Dirac semimetals. The remarkable optical properties predicted in these materials show their versatile potential for optoelectronic uses. However, little is known of their response in the picoseconds after absorbing a photon. Here, we measure the ultrafast dynamics of four materials that share non-trivial band structure topology but that differ chemically, structurally, and in their low-energy band structures: ZrSiS, which hosts a Dirac line node and Dirac points; TaAs and NbP, which are Weyl semimetals; and Sr 1–y Mn 1–z Sb 2 , in which Dirac fermions coexist with broken time-reversal symmetry. After photoexcitation by a short pulse, all four relax in two stages, first sub-picosecond and then few-picosecond. Their rapid relaxation suggests that these and related materials may be suited for optical switches and fast infrared detectors. Lastly, the complex change of refractive index shows that photoexcited carrier populations persist for a few picoseconds.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Ultrafast nonlinear transparency driven at a telecom wavelength in an organic semiconductor system

Ultrafast laser-induced transparency is demonstrated using femtosecond (fs) pump-probe experiments in the organic P3HT:PCBM (donor:acceptor) blend structure. For above band gap pumping, ultrafast transient signals strongly depend on the probe photon energy. Most intriguingly, for below band gap pumping at 0.95 eV, or 1.3 µm at a telecom wavelength, a huge transmission increase up to 30% only during the laser pulse ~100 fs is observed as a pump-driven, quasi-instantaneous suppression of absorption for the high photon-energy energy probe beam. Here, we attribute the observed laser-driven transparency to dynamic Franz-Keldysh effect, at least one order of magnitude stronger compared to the multiphoton nonlinearities. Our results may be used for development of low-cost, beyond 100 Gbit/s optical switching devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Progress toward picosecond on-chip magnetic memory

Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

42 ENGINEERING↗
DOE OSTI2025

Bistable random momentum transfer in a linear on-chip resonator

Optical switches and bifurcation rely on the nonlinear response of materials. Here, we demonstrate linear temporal bifurcation responses in a passive multimode microresonator, with strongly coupled chaotic and whispering gallery modes (WGMs). In microdisks, the chaotic modes exhibit broadband transfer within the deformed cavities, but their transient response is less explored and yields a random output of the analog signal distributed uniformly from “0” to “1.” Here, we build chaotic states by perturbing the multimode microring resonators with densely packed silicon nanocrystals on the waveguide surface. In vivo measurements reveal random and “digitized” output that ONLY populates around 0 and 1 intensity levels. The bus waveguide mode couples first to chaotic modes, then either dissipates or tunnels into stable WGMs. This binary pathway generates high-contrast, digitized outputs. In conclusion, the fully passive device enables real-time conversion of periodic clock signals into binary outputs with contrasts exceeding 12.3 dB, data rates of up to 10 7 · bits per second, and 20 dB dynamic range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Reanalysis of Experimental Determinations of Polariton-Polariton Interactions in Microcavities

The polariton-polariton interaction strength is an important parameter for all kinds of applications using the nonlinear properties of polaritons, such as optical switching and single-photon blockade devices. In this paper, we review and compare the results of a series of experiments on polariton-polariton interactions in GaAs/AlxGa1-xAs microcavity polariton structures and present an updated analysis of these experiments. We show that not just the energy shift of the spectral lines but also the results of measurements sensitive to the polariton scattering rate are important for the calibration of the interaction parameter at low excitation density. We find that when adjustments are made to correct for recent understanding of the experiments, the value of the interaction parameter at low density is lower than previous reported, but still significantly higher than theoretically predicted.

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
DOE OSTI2024

Greater than Five-Order-of-Magnitude Postcompression Temporal Contrast Improvement with an Ionization Plasma Grating

High-intensity lasers require suppression of prepulses and other nonideal temporal structure to avoid target disruption before the arrival of the main pulse. Here, to address this, we demonstrate that ionization gratings act as a controllable optical switch for high-power light with a temporal contrast improvement of at least 3 ×10 5 and a switching time less than 500 fs. We also show that a grating system can run for hours at 10 Hz without degradation. The contrast improvement from an ionization grating compares favorably to that achievable with plasma mirrors.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

A High-Speed Large-Range Tip-Tilt-Piston Micromirror Array

This work introduces the design of a high fill-factor (>99%) micromirror array (MMA) that consists of 1mm2 hexagonal mirrors, which are expected to each independently achieve continuous, closed-loop control of three degrees of freedom (DOFs)—tip, tilt, and piston—over large ranges (>±10o rotation and >±30μm translation) at high speeds (~45kHz for a 1o amplitude of rotational oscillation). The flexure topology of this array is designed using the Freedom, Actuation, and Constraint Topologies (FACT) synthesis approach, which utilizes geometric shapes to help designers rapidly consider every flexure topology that best achieves a desired set of DOFs driven by decoupled actuators. The geometry of this array’s comb-drive actuators are optimized in conjunction with the geometry of the system’s flexures using a novel approach. The analytical models underlying this approach are verified using finite element analysis (FEA) and validated using experimental data. The capabilities of this new mirror array will enable, or significantly improve, the performance of a variety of high-impact optical technologies such as advanced optical switches, spatial-light modulators, displays, and laser steering or scanning devices.

42 ENGINEERING↗
DOE OSTI2020

Thermo-optic properties of silicon-rich silicon nitride for on-chip applications

We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder interferometers (MZIs) as a function of temperature were used to characterize the thermo-optic coefficients of silicon nitride films with varying silicon contents. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.65±0.08) ×10 −4 K -1 . Furthermore, we realize an SRN multi-mode interferometer (MMI) based thermo-optic switch with over 20 dB extinction ratio and total power consumption for two-port switching of 50 mW.

Nejadriahi, Hani↗
DOE OSTI2023

Integrated SOAs enable energy-efficient intra-data center coherent links

Coherent optical links are becoming increasingly attractive for intra-data center applications as data rates scale. Realizing the era of high-volume short-reach coherent links will require substantial improvements in transceiver cost and power efficiency, necessitating a reassessment of conventional architectures best-suited for longer-reach links and a review of assumptions for shorter-reach implementations. In this work, we analyze the impact of integrated semiconductor optical amplifiers (SOAs) on link performance and power consumption, and describe the optimal design spaces for low-cost and energy-efficient coherent links. Placing SOAs after the modulator provide the most energy-efficient link budget improvement, up to 6 pJ/bit for large link budgets, despite any penalties from nonlinear impairments. Increased robustness to SOA nonlinearities makes QPSK-based coherent links especially attractive, and larger supported link budgets enable the inclusion of optical switches, which could revolutionize data center networks and improve overall energy efficiency.

Maharry, Aaron (ORCID:0000000273732697)↗
DOE OSTI2014

Offner radial group delay compensator for ultra-broadband laser beam transport

Conventional lens-based image relays introduce radial group delay that significantly reduces focal-spot intensity of ultra-broadband short pulses. A direct compensation scheme that can be used with conventional singlet image relays is proposed. The compensation scheme is based on using two negative lenses embedded within an Offner imaging system. The setup allows a single-pass configuration and eliminates the need for polarization switching optics. The performance of this setup is calculated using ray tracing. The compensation improves the spatiotemporal Strehl ratio from 0.02 to 0.97.

Bahk, Seung-Whan↗
DOE OSTI2018

Quasiepitaxial Growth of Organic Crystalline Thin-Films

The presence of excitons at room temperature in organic semiconductors distinguish them from traditional semiconductors, providing exceptional opportunities for manipulating energy in a range of structures from LEDs, polariton lasers, transparent photovoltaics, and optical switches. However, control over crystalline order, orientation, and defect formation are crucial to the fabrication and optimization of these excitonic electronics. In this work we have demonstrated new routes and new understanding in the growth of ordered organic thin film crystals and multilayer crystals. These crystals are composed of incommensurate organic semiconductors with sustained azimuthal registry and controlled crystalline orientation grown from the bottom up. By probing a range of molecular pairings with in-situ and real-time diffraction, we have demonstrated that one of the driving forces behind this growth is the requirement of surface energy matching of the lowest energy crystalline planes, which is distinct from the requirements of lattice matching for inorganic epitaxy. We have also demonstrated a new route to non-equilibrium quasiepitaxial growth of crystalline organic multilayers through selective edge nucleation dynamics that could provide new control over molecular orientation in organic quantum wells. This work provides a more universal understanding of the key requirements for growth regimes that have been historically inaccessible and will enable enhanced excitonic devices

36 MATERIALS SCIENCE↗
NASA NTRS1977

Formation of integrated optics components by multiphoton photorefractive processes

Phase holograms have been formed in pure outdiffused LiNbO3 waveguides using the photorefractive effect initiated by two-photon absorption. Efficient holograms were recorded with two guided waves, of less than 100 W peak power, and less than 10 microJ optical energy. This technique automatically compensates for wave front perturbations in the guide and allows the formation of various integrated components such as wavelength multiplexers and optical switches.

Verber, C. M.↗
NASA NTRS1980

Fiber-optic rotation sensor technology

A concept for an all-waveguide fiber-optic rotation sensor is discussed, and the results of preliminary tests of key elements are described. A single channel waveguide coupler design provides the functions of an optical switch, a 3-dB beam splitter, a phase retarder, and a signal modulator, all of which may be formed on the same chip and interconnected by channel single-mode waveguides. Preliminary test results for the waveguide coupler and for a rotation sensor without the coupler are presented. Signal processing, polarization control, and interconnection of the waveguide components are discussed.

Goss, W. C.↗