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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Sandia National Laboratories FY20 Progress Report

The Energetic Neutrons campaign led by Sandia National Laboratories (SNL) had a successful year testing electronic devices and printed circuit boards (PCBs) under 14 MeV neutron irradiation at OMEGA. During FY20 the Energetic Neutrons campaign increased the number and complexity of experiments, continued collaborations with external organizations, and generated knowledge that supports SNL’s National Security mission. In FY20 the Energetic Neutrons campaign was executed by an early career team led by a new PI. The SNL team members were trained to take over new responsibilities during the shot day to increase the number and complexity of experiments in the campaigns. Also, in FY20 for the first time the Energetic Neutrons campaign had a graduate student contributing with pre and post-irradiation characterizations at SNL of the semiconductor devices irradiated at OMEGA. In FY20 SNL collaborated with the Air Force Nuclear Weapons Center (AFNWC) and supported experiments related to radiation effects in semiconductor devices. SNL also gave the opportunity to ride along to Los Alamos National Laboratory and multiple scientists from MIT and LLE. SNL continued using the last two generations of the Neutron Effects Diagnostics (NEDs) to field active and passive experiments but also redesigned the latest generation of the NEDs to accommodate larger components and improve the vacuum sealing as shown in figure 1a. The redesigned NEDs allowed SNL to perform active tests of a high voltage (HV) PCB for the first time at OMEGA; where signals before, during and after the irradiation were recorded. The HV PCB installed in one of the SNL NEDs is shown in figure 1b where a 3D-printed nosecone was used to check for mechanical and electrical interference. Passive irradiations of multiple components were followed up with leakage current, gain measurements and radiation-induced defect characterization.

42 ENGINEERING↗
DOE OSTI2021

Shielded and Low-Damping SPM Probes for Quantitative Electrical and Electrochemical Characterization (Phase IIA)

The purpose of this DOE SBIR award was to develop new scanning probe microscopy tools for the elucidation of electrical and electrochemical properties at the nanoscale. High performance probes are important for energy materials research. In both solar cells and batteries, the essential physics and chemistry occur at the nanoscale and nanoscale characterization tools are required for their elucidation. Two products were developed: an electrically shielded probe and an electrically conductive probe with low leakage currents. Our processes were based on post processing of existing probes and fabrication methods were tested, leading to a laser micromachining based approach that led to the first minimal viable product. We invented a method to make a reliable electrical contact that attaches a flexible printed circuit board to the chip. enable leak-free operation crucial when used in conductive liquids and electrolytes. This proprietary solution improves chip handling, reduces contamination, and maintains effective electrical contact. The probes fabricated in this Phase IIa are a minimal viable product which attracted attention from various tip manufacturers and instrument manufacturers alike.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Advanced Thin Film Core Technology: CIGS Final Technical Report (FTR)

Cu(In,Ga)Se 2 (CIGS) thin-film photovoltaics are a high-efficiency and reliable technology. This project completed research in two important areas and was designed to work collaboratively with industrial partners. Task 1: Alkali Science focused on alkali post-deposition treatments (PDT). PDTs have been instrumental in the dramatic voltage improvements that have moved CIGS device efficiencies from 20% to 23.35% [1]. Based on a survey of CIGS companies at the beginning of the project, the single biggest breakthrough for the CIGS community would be a mechanistic understanding of the role of alkalis in the material system. Significant accomplishments of Task 1: Alkali Science: 1) KF post-deposition treatments were shown to improve lifetime, open-circuit voltage (VOC), and efficiency of industrial partner samples, even when done as a later step, separate from the original CIGS deposition. 2) KF boosted efficiency when incorporated at the end of the third stage of NREL CIGS growth. 3) XPS characterization of CIGS surfaces with and without PDTs led to a proposed mechanism whereby K drives structural transformation at 350 degrees C that is locked in at room temperature even after K is rinsed away. 4) Published recipes for KF and RbF PDTs. Literature to date did not provide enough detail to quickly reproduce experimental results. 5) Identified most important parameters (RbF cell temperature and lamp setpoint temperature) and set boundaries for successful RbF PDTs. The purpose of Task 2: Cell-level Reliability was to overcome the largest challenges to investor confidence and long product lifetime in CIGS-based photovoltaic products: metastability, shading-induced hot spots, and potential-induced degradation (PID). Key findings were made in each of these areas by studying CIGS reliability at the cell level: 1) Published NREL's cell-level reliability testing procedures along with challenges that were encountered while developing them. These were also distributed to the community through an MRS conference presentation. 2) Decreased metastability by adding a CdS hole-injection layer between the CIGS and Zn(O,S) in the device stack. It also improved device performance. Materials other than CdS can be used for the same purpose. 3) Reduced front-glass PID by replacing soda-lime glass with low-Na borosilicate glass. 4) Found that PID depends on leakage current and light/electrical bias. This will help labs avoid test-specific degradation. 5) Discovered that CIGS can suffer from two different types of PID with different mechanisms. Front is slower and leads to shunting ZnO. Back is faster and degrades the p-n junction. 6) Holding cells at open circuit slows PID compared to short circuit. This affects testing protocols for glass/glass modules.

14 SOLAR ENERGY↗
DOE OSTI2022

Characterizing the Performance of Fission Chambers for Local Neutron Flux and Spectrum Measurement

Three fission chambers were tested at The Ohio State University Research Reactor (OSURR) to evaluate fission chambers for neutron flux and spectrum measurements. Two of the fission chambers are commercial Photonis CFUR43 fission chambers—one utilizing highly enriched uranium-235 fissile deposits for thermal neutron detection and the other with highly depleted uranium-238 for fast neutron detection. This experiment was also performed in collaboration with French Alternative Energies and Atomic Energy Commission (CEA) with CEA suppling a uranium-235 loaded fission chamber built from the Photonis CFPR CE8/9 kit. The fission chambers were irradiated in a movable 6.5 inch dry tube at reactor powers of 50 kW, 200 kW, and 450 kW at ambient temperature and at 350°C. While all sensors demonstrated good linear sensitivity to reactor power, a leakage current of 6 nA was measured for the CFUR43 detectors. Additionally, the measured signal ratios of the two CFUR43 detectors did not match the theoretical values and are subject to further investigation on individual signal contributors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Impact of modifier-rich coatings on the ionic transport of glasses [Poster]

Ionic conduction in silicate glasses is mainly influenced by the nature, concentration, and mobility of the network-modifying (NWM) cations. The electrical conduction in SLS is dominated by the ionic migration of sodium moving from the anode to the cathode. An activation energy for this conduction process was calculated to be 0.82eV and in good agreement with values previously reported. The conduction process associated to the leakage current and relaxation peak in TSDC for HPFS is attributed to conduction between nonbridging oxygen hole centers (NBOHC). It is suggested that ≡Si-OH = ≡Si-O - + H 0 under thermo-electric poling, promoting hole or proton injection from the anode and responsible for the 1.5eV relaxation peak. No previous TSDC data have been found to corroborate this mechanism. The higher activation energy and lower current intensity for the coated HPFS might be attributed to a lower concentration of NBOHC after heat treatment (Si-OH + OH-Si = SiO-Si + H 2 O). This could explain the TSDC signal around room temperature for the coated HPFS. Another possible explanation could be a redox reaction at the anode region dominating the current response.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Evaluation of the Stability of Edge-Passivated CZTS Radiation Detectors

CdZnTeSe (CZTS) is a next gen replacement room temperature radiation detector that solves common issues with modern CZT detectors. • Surface states can trap radiation induced carriers and can act as leakage current pathways requiring detectors to passivated for optimal performance. • In this work, we seek to identify the best passivation technique for CZTS detectors.

KLEPPINGER, JOSHUA↗
DOE OSTI2024

Irradiation Results of Commercial Neutron and Gamma Sensors at the Ohio State University Research Reactor

This report serves to present the evaluation results of commercial radiation detectors (SPNDs) with the potential to accomplish the data objectives—having sufficient gamma and fast neutron sensitivity—at temperatures near 650°C. The detectors chosen for evaluation are gamma ion chambers from Exosens (previously known as Photonis) models CRGA11 and CRGE32 and tantalum-based self-powered neutron detectors (Ta-SPND) from Mirion. The evaluation was performed in a series of heat irradiations from ambient to 850°C in the 9.5-inch dry tube furnace at the Ohio State University Research Reactor (OSURR). Ion chamber counting curves were measured to evaluate sensor operability at temperature. Detector sensitivity to reactor power and temperature were measured and presented in curve fit parameters. The curve fit equations were used to identify the suggested operational temperatures based on reactor power. Overall, it was evaluated that the CRGA11 was not significantly affected by temperatures up to 650°C and is operable—with higher temperature-contributed signals—up to 700°C. The CRGE32 was more affected by the high temperatures compared to the CRGA11. As a result of increasing temperature, the leakage current was a dominating factor. While the detector can operate up to 600°C and 700°C with lowered high voltage, it is not recommended unless a suitably strong gamma flux field is present. Finally, Ta SPND did not demonstrate good performance beyond 350°C due to the presence of an unknown phenomenon at changing temperatures. The study of the phenomenon is an active research topic outside the scope of this project.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2024

2D Amorphous Carbon Dielectric Prepared from Solution Precursor for Nanoelectronics

The preparation of amorphous 2D nanodielectrics represents a major challenge due to the metastable nature of amorphous phases. We describe a scalable and solution-based strategy to prepare wafer-scale 2D amorphous carbon with thickness down to 1–2 atomic layers from coal-derived carbon quantum dots as precursors. The prepared atomically thin 2D amorphous carbon can be suspended over cavities as freestanding membranes with high modulus of 400±100 GPa and demonstrate robust dielectric properties with dielectric strength above 20 MV·cm-1 and leakage current density below 10-4 A·cm-2 through a scaled thickness of three-atomic layers. When implemented as ultrathin gate dielectrics in 2D transistors or ion-transport media in memristors, they enable exceptional device performance and spatiotemporal uniformity, resulting from their amorphous form, intrinsic ultrathinness, and 2D atomic structures.

Pham, Viet Hung↗
DOE OSTI2024

Smart Pixels: In-pixel AI for on-sensor data filtering

We present a smart pixel prototype readout integrated circuit (ROIC) designed in CMOS 28 nm bulk process, with in-pixel implementation of an artificial intelligence (AI) / machine learning (ML) based data filtering algorithm designed as proof-of-principle for a Phase III upgrade at the Large Hadron Collider (LHC) pixel detector. The first version of the ROIC consists of two matrices of 256 smart pixels, each 25$\times$25 µm\textsuperscript{2} in size. Each pixel consists of a charge-sensitive preamplifier with leakage current compensation and three auto-zero comparators for a 2-bit flash-type ADC. The frontend is capable of synchronously digitizing the sensor charge within 25 ns. Measurement results show an equivalent noise charge (ENC) of $\sim$30e\textsuperscript{-} and a total dispersion of $\sim$100e\textsuperscript{-} The second version of the ROIC uses a fully connected two-layer neural network (NN) to process information from a cluster of 256 pixels to determine if the pattern corresponds to highly desirable high-momentum particle tracks for selection and readout. The digital NN is embedded in-between analog signal processing regions of the 256 pixels without increasing the pixel size and is implemented as fully combinatorial digital logic to minimize power consumption and eliminate clock distribution, and is active only in the presence of an input signal. The total power consumption of the neural network is $\sim$ 300 $\mu$W. The NN performs momentum classification based on the generated cluster patterns and even with a modest momentum threshold, it is capable of 54.4\% – 75.4\% total data rejection, opening the possibility of using the pixel information at 40MHz for the trigger. The total power consumption of analog and digital functions per pixel is $\sim$ 6 $\mu$W per pixel, which corresponds to $\sim$ 1 W/cm\textsuperscript{2} staying within the experimental constraints.

Parpillon, Benjamin↗
DOE OSTI2024

Radiation-Hard Smart-Pixel Detector ASIC ReadOut with Digital AI in 28nm

Detectors at future high energy colliders will face enormous technical challenges. Disentangling the unprecedented numbers of particles expected in each event will require highly granular silicon pixel detectors with billions of readout channels. With event rates as high as 40 MHz, these detectors will generate petabytes of data per second. To enable discovery within strict bandwidth and latency constraints, future trackers must be capable of fast, power efficient, and radiation hard data-reduction at the source. This effort is pursuing the co-design development of high-performance readout smart pixel ASICs for a future Phase III High Luminosity upgrade of the Large Hadron Collider. A 1.6mm2 ASIC prototype was designed by Fermilab in CMOS 28 nm bulk process and submitted for manufacturing in February 2024. It leverages the analog front-end pixel design of a previous prototype fabricated and tested in 2023, which achieved a simulated detection level of ~400e- with 30fF input capacitance. The ROIC consists of two matrices of 16×16 smart pixels, each 25×25 μm2 in size. Each smart pixel contains a charge-sensitive preamplifier with leakage current compensation and three auto-zero comparators for a 2-bit flash-type ADC. There is digital space for the integration of our fully combinatorial AI that performs momentum classification at the bunch crossing rate. The total power consumption is ∼6μW per pixel, which corresponds to ~1mW/cm2. The ASIC incorporates programmable front-end charge injection circuitry to generate pixel cluster charges during characterization. The cluster profile will be generated to duplicate hit characteristics of various momentum (pT). We will present early results from chip testing.

Parpillon, Benjamin↗
DOE OSTI2024

Solution-Based Synthesis of Ultrathin Quasi-2D Amorphous Carbon for Nanoelectronics

The synthesis of ultrathin 2D amorphous dielectric film represents a major challenge due to the metastable nature of amorphous phases. We describe a scalable and solution-based strategy to prepare wafer-scale 2D amorphous carbon with thickness down to 1–2 atomic layers from coal-derived carbon quantum dots as precursors. The prepared atomically thin 2D amorphous carbon can be suspended over cavities as freestanding membranes with high modulus of 400±100 GPa and demonstrate robust dielectric properties with dielectric strength above 20 MV·cm-1 and leakage current density below 10-4 A·cm-2 through a scaled thickness of three-atomic layers. When implemented as ultrathin gate dielectrics in 2D transistors or ion-transport media in memristors, they enable exceptional device performance and spatiotemporal uniformity, resulting from their amorphous form, intrinsic ultrathinness, and 2D atomic structures.

Pham, Viet Hung [NETL Site Support Contractor, Nat↗
DOE OSTI2026

Thermal Studies of CMS High-Granularity Calorimeter (HGCAL) Cassettes for the HL-LHC Upgrade

The CMS High Granularity Calorimeter (HGCAL) is a key endcap upgrade for the High-Luminosity LHC, designed to operate in an environment of extreme radiation and high particle rates. Each HGCAL cassette integrates silicon and scintillator modules, front-end ASICs, and a copper cooling plate that provides both mechanical integrity and thermal coupling using two-phase CO₂ cooling. Stable and uniform temperature control is essential to ensure reliable performance of the front-end electronics and to limit radiation-induced leakage currents in the silicon sensors. We present results from thermal characterization studies of pre-series HGCAL cassettes assembled and tested at Fermilab. Embedded RTD/PT1000 temperature sensors were used to measure gradients across copper cooling plates, module layers, and cassette edges under powering conditions representative of operation. The measured thermal behavior demonstrates effective heat transport through the cassette stack and highlights small but systematic variations correlated with geometry and assembly tolerances. These results validate the cooling performance of HGCAL cassettes.

Wang, Jinglu [Northwestern U.]↗
DOE OSTI2022

Characterization of Low Gain Avalanche Detector Prototypes’ Response to Gamma Radiation

Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in a single pad configuration, 2 × 2 arrays, and related p-i-n diodes, and exposed to Co-60 sources for study. Devices were fabricated with a range of dopant layer concentrations, and for the arrays, a variety of inter-pad distances and distances from the active area to the edge. Measurements of capacitance versus voltage and leakage current versus voltage have been made to compare pre- and post-irradiation characteristics in gain layer depletion voltage, full bulk depletion voltage, and breakdown voltage. Conclusions are drawn regarding the effects of the gammas on both surface and interface states and on their contribution to acceptor removal through non-ionizing energy loss from Compton electrons or photoelectrons. Comparison of the performances of members of the set of devices can be used to optimize gain layer parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Measuring the Electronic Bandgap of Carbon Nanotube Networks in Non-Ideal p-n Diodes

The measurement of the electronic bandgap and exciton binding energy in quasi-one-dimensional materials such as carbon nanotubes is challenging due to many-body effects and strong electron–electron interactions. Unlike bulk semiconductors, where the electronic bandgap is well known, the optical resonance in low-dimensional semiconductors is dominated by excitons, making their electronic bandgap more difficult to measure. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWCNTs) using non-ideal p-n diodes. We show that our s-SWCNT networks have a short minority carrier lifetime due to the presence of interface trap states, making the diodes non-ideal. We use the generation and recombination leakage currents from these non-ideal diodes to measure the electronic bandgap and excitonic levels of different polymer-wrapped s-SWCNTs with varying diameters: arc discharge (~1.55 nm), (7,5) (0.83 nm), and (6,5) (0.76 nm). Our values are consistent with theoretical predictions, providing insight into the fundamental properties of networks of s-SWCNTs. The techniques outlined here demonstrate a robust strategy that can be applied to measuring the electronic bandgaps and exciton binding energies of a broad variety of nanoscale and quantum-confined semiconductors, including the most modern nanoscale transistors that rely on nanowire geometries.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation

To employ graphene’s rapid conduction in 2D devices, a heterostructure with a broad bandgap dielectric that is free of traps is required. Within this paradigm, h-BN is a good candidate because of its graphene-like structure and ultrawide bandgap. We show how to make such a heterostructure by irradiating alternating layers of a-C and a-BN film with a nanosecond excimer laser, melting and zone-refining constituent layers in the process. With Raman spectroscopy and ToF-SIMS analyses, we demonstrate this localized zone-refining into phase-pure h-BN and rGO films with distinct Raman vibrational modes and SIMS profile flattening after laser irradiation. Furthermore, in comparing laser-irradiated rGO-Si MS and rGO/h-BN/Si MIS diodes, the MIS diodes exhibit an increased turn-on voltage (4.4 V) and low leakage current. The MIS diode I-V characteristics reveal direct tunneling conduction under low bias and Fowler-Nordheim tunneling in the high-voltage regime, turning the MIS diode ON with improved rectification and current flow. This study sheds light on the nonequilibrium approaches to engineering h-BN and graphene heterostructures for ultrathin field effect transistor device development.

2D materials↗
DOE OSTI2026

MTL_TX: A Multi-Task Transformer Model for Improved Radiation Time-Series Estimation

Controlling radiation doses at potential radioactive facilities is critical to ensuring the safety of both personnel and the public. At the Thomas Jefferson National Accelerator Facility (JLab), multiple sensors are deployed around the three experimental halls to monitor key parameters, including single-beam current, energy levels, current leakage, and radiation values during accelerator operations. In this study, we developed a Multi-task Transformer model, MTL_TX, to accurately estimate radiation doses at sensor locations based on historical data, with the aim of enhancing safety in accelerator facilities and surrounding public areas. To improve estimation accuracy, we integrated two innovative components into the proposed model: hierarchical feature embedding (HFE) and multi-level decomposition attention (MDA). Additionally, the multi-task learning (MTL) framework effectively leverages correlations among multiple sensors, enabling individual estimations for each sensor. MTL_TX achieved outstanding results on data collected in 2018, with an MSE of 0.1464, an RMSE of 0.2353, and an R 2 score of 0.8584. Furthermore, when trained on 2018 data, MTL_TX exhibited excellent generalization capability to unseen datasets from 2016 to 2019, achieving an MSE of 0.1407, an RMSE of 0.2263, and an R 2 score of 0.8831. These results demonstrate a significant improvement over existing state-of-the-art models.

Transformer↗
DOE OSTI2022

Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method

X-ray topography measurements on a 100 mm diameter GaN boule grown by the Near Equilibrium AmmonoThermal method revealed an improvement in dislocation density from >1 × 10 6 cm -2 to between 2 × 10 5 and 5 × 10 5 cm -2, an improvement greater than two to five times from seed to growth. This data builds on previous X-ray diffraction and defect selective etching to quantify the reduction in defect density that is closely associated with increasing growth thickness. This result indicates that there is a pathway to further dislocation reduction by increasing growth thickness for GaN crystals including those of 100 mm or larger diameter. Further reduction of the dislocation density of large-area substrates will lead to GaN power devices with reduced leakage current under reverse bias and better device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

Here we investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low rectification and high leakage current compared to contacts on as-grown films. By employing an optimized surface treatment to restore the GaN surface following UHPA, we obtain Schottky contacts with a high rectification ratio of ~10 9 , a near-unity ideality factor of 1.03, and a barrier height of ~0.9 eV. These characteristics enable the development of GaN junction barrier Schottky diodes employing Mg implantation and UHPA.

42 ENGINEERING↗