Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “layers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 289 records · Page 16

Design of step composition gradient thin film transistor channel layers grown by atomic layer deposition

In this study, we proposed the artificially designed channel structure in oxide thin-film transistors (TFTs) called a “step-composition gradient channel.” We demonstrated Al step-composition gradient Al-Zn-O (AZO) channel structures consisting of three AZO layers with different Al contents. The effects of stacking sequence in the step-composition gradient channel on performance and electrical stability of bottom-gate TFT devices were investigated with two channels of inverse stacking order (ascending/descending step-composition). The TFT with ascending step-composition channel structure (5 → 10 → 14 at. % Al composition) showed relatively negative threshold voltage (−3.7 V) and good instability characteristics with a reduced threshold voltage shift (Δ 1.4 V), which was related to the alignment of the conduction band off-set within the channel layer depending on the Al contents. Finally, the reduced Al composition in the initial layer of ascending step-composition channel resulted in the best field effect mobility of 4.5 cm{sup 2}/V s. We presented a unique active layer of the “step-composition gradient channel” in the oxide TFTs and explained the mechanism of adequate channel design.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Properties of the c-Si/Al{sub 2}O{sub 3} interface of ultrathin atomic layer deposited Al{sub 2}O{sub 3} layers capped by SiN{sub x} for c-Si surface passivation

This work presents a detailed study of c-Si/Al{sub 2}O{sub 3} interfaces of ultrathin Al{sub 2}O{sub 3} layers deposited with atomic layer deposition (ALD), and capped with SiN{sub x} layers deposited with plasma-enhanced chemical vapor deposition. A special focus was the characterization of the fixed charge density of these dielectric stacks and the interface defect density as a function of the Al{sub 2}O{sub 3} layer thickness for different ALD Al{sub 2}O{sub 3} deposition processes (plasma-assisted ALD and thermal ALD) and different thermal post-deposition treatments. Based on theoretical calculations with the extended Shockley–Read–Hall model for surface recombination, these interface properties were found to explain well the experimentally determined surface recombination. Thus, these interface properties provide fundamental insights into to the passivation mechanisms of these Al{sub 2}O{sub 3}/SiN{sub x} stacks, a stack system highly relevant, particularly for high efficiency silicon solar cells. Based on these findings, it was also possible to improve the surface passivation quality of stacks with thermal ALD Al{sub 2}O{sub 3} by oxidizing the c-Si surface prior to the Al{sub 2}O{sub 3} deposition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Reducing spin-torque switching current by incorporating an ultra-thin Ta layer with CoFeB free layer in magnetic tunnel junctions

We studied the spin torque switching in dual MgO layer based magnetic tunnel junctions (MTJs) by incorporating an ultra-thin (0.5 nm) Ta layer at the CoFeB free layer/top MgO layer interface. The Ta incorporated MTJ showed a significant reduction (∼30%) in critical switching current density (J{sub C0} ) as compared to that of the control MTJ whilst maintaining the same tunneling magnetoresistance as well as thermal stability. The reduction of J{sub C0} can be attributed to the perpendicular magnetic anisotropy arising from the incorporation of an ultrathin Ta layer with the MgO|CoFeB structure. This scheme of reducing J{sub C0} without degrading other properties may contribute to the development of spin-transfer-torque magnetic random access memory for low power applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The onset of sub-surface oxidation induced by defects in a chemisorbed oxygen layer

We investigate the onset of internal oxidation of a Cu(110) surface induced by oxygen subsurface adsorption via defects in the Cu(110)–(2 × 1)–O chemisorbed layer. The presence of a boundary formed by merged add-row structure domains due to a mismatch of half unit-cell leads to preferred oxygen adsorption at the subsurface tetrahedral sites. The resulting distorted Cu–O tetrahedra along the domain boundary have comparable bond length and angles to those of the bulk oxide phase of Cu{sub 2}O. Our results indicate that the presence of defects in the oxygen-chemisorbed adlayer can lead to the internal oxidation via the formation of Cu{sub 2}O-like tetrahedra in between the topmost and second outermost atomic layers at the oxygen coverage θ = 0.53 and the second and third outermost atomic layers at θ = 0.56. These results show that the internal oxidation of a metal surface can occur in the very beginning of the oxygen chemisorption process enabled by the presence of defects in the oxygen chemisorbed layer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A stochastic perturbation method to generate inflow turbulence in large-eddy simulation models: Application to neutrally stratified atmospheric boundary layers

Despite the variety of existing methods, efficient generation of turbulent inflow conditions for large-eddy simulation (LES) models remains a challenging and active research area. Herein, we extend our previous research on the cell perturbation method, which uses a novel stochastic approach based upon finite amplitude perturbations of the potential temperature field applied within a region near the inflow boundaries of the LES domain [Muñoz-Esparza et al., “Bridging the transition from mesoscale to microscale turbulence in numerical weather prediction models,” Boundary-Layer Meteorol., 153, 409–440 (2014)]. The objective was twofold: (i) to identify the governing parameters of the method and their optimum values and (ii) to generalize the results over a broad range of atmospheric large-scale forcing conditions, U{sub g} = 5 − 25 m s{sup −1}, where U{sub g} is the geostrophic wind. We identified the perturbation Eckert number, Ec=U{sub g}{sup 2}/ρc{sub p}θ{sup ~}{sub pm}, to be the parameter governing the flow transition to turbulence in neutrally stratified boundary layers. Here, θ{sup ~}{sub pm} is the maximum perturbation amplitude applied, c{sub p} is the specific heat capacity at constant pressure, and ρ is the density. The optimal Eckert number was found for nonlinear perturbations allowed by Ec ≈ 0.16, which instigate formation of hairpin-like vortices that most rapidly transition to a developed turbulent state. Larger Ec numbers (linear small-amplitude perturbations) result in streaky structures requiring larger fetches to reach the quasi-equilibrium solution, while smaller Ec numbers lead to buoyancy dominated perturbations exhibiting difficulties for hairpin-like vortices to emerge. Cell perturbations with wavelengths within the inertial range of three-dimensional turbulence achieved identical quasi-equilibrium values of resolved turbulent kinetic energy, q, and Reynolds-shear stress, . In contrast, large-scale perturbations acting at the production range exhibited reduced levels of , due to the formation of coherent streamwise structures, while q was maintained, requiring larger fetches for the turbulent solution to stabilize. Additionally, the cell perturbation method was compared to a synthetic turbulence generator. The proposed stochastic approach provided at least the same efficiency in developing realistic turbulence, while accelerating the formation of large-scales associated with production of turbulent kinetic energy. Also, it is computationally inexpensive and does not require any turbulent information.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Analysis of Nb{sub 3}Sn surface layers for superconducting radio frequency cavity applications

We present an analysis of Nb{sub 3}Sn surface layers grown on a bulk Niobium (Nb) coupon prepared at the same time and by the same vapor diffusion process used to make Nb{sub 3}Sn coatings on 1.3 GHz Nb cavities. Tunneling spectroscopy reveals a well-developed, homogeneous superconducting density of states at the surface with a gap value distribution centered around 2.7 ± 0.4 meV and superconducting critical temperatures (T{sub c}) up to 16.3 K. Scanning transmission electron microscopy performed on cross sections of the sample's surface region shows an ∼2 μm thick Nb{sub 3}Sn surface layer. The elemental composition map exhibits a Nb:Sn ratio of 3:1 and reveals the presence of buried sub-stoichiometric regions that have a ratio of 5:1. Synchrotron x-ray diffraction experiments indicate a polycrystalline Nb{sub 3}Sn film and confirm the presence of Nb rich regions that occupy about a third of the coating volume. These low T{sub c} regions could play an important role in the dissipation mechanisms occurring during RF tests of Nb{sub 3}Sn-coated Nb cavities and open the way for further improving a very promising alternative to pure Nb cavities for particle accelerators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Current-perpendicular-to-the-plane magnetoresistance from large interfacial spin-dependent scattering between Co{sub 50}Fe{sub 50} magnetic layer and In-Zn-O conductive oxide spacer layer

We have investigated electrically conductive indium-zinc-oxide (IZO) deposited by magnetron sputtering as spacer layer for current-perpendicular-to-the-plane giant magnetoresistance sensor devices. Spin-valves with a Co{sub 50}Fe{sub 50}/IZO/Co{sub 50}Fe{sub 50} trilayer showed resistance-area product (RA) ranging from 110 to 250 mΩ μm{sup 2}, significantly larger than all-metal structures with Ag or Cu spacers (∼40 mΩ μm{sup 2}). Magnetoresistance ratios (ΔR/R) of 2.5% to 5.5% depending on the IZO spacer thickness (1.5–6.0 nm), corresponding to ΔRA values from 3 to 13 mΩ μm{sup 2}, were obtained. The values of ΔRA with the IZO spacers and Co{sub 50}Fe{sub 50} magnetic layers were significantly larger than those with conventional metal spacers and Co{sub 50}Fe{sub 50} magnetic layers (∼1–2 mΩ μm{sup 2}). The dependence of ΔRA on the magnetic layer thickness suggests that the larger ΔRA obtained with IZO spacer is due to a large interfacial spin-dependent scattering caused by the large specific resistance at the Co{sub 50}Fe{sub 50}/IZO interface. From structural characterization by TEM and the observed dependence of the RA dispersion on device size, the electric current flowing through the IZO spacer is thought to be laterally uniform, similar to normal metal spacers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Quasi-two-dimensional electron gas at the interface of γ-Al{sub 2}O{sub 3}/SrTiO{sub 3} heterostructures grown by atomic layer deposition

We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al{sub 2}O{sub 3}/TiO{sub 2}-terminated SrTiO{sub 3} (STO) grown by atomic layer deposition (ALD). The ALD growth of Al{sub 2}O{sub 3} on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylaluminum and water were used as co-reactants. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and ex situ cross-sectional transmission electron microscopy were used to determine the crystallinity of the Al{sub 2}O{sub 3} films. As-deposited Al{sub 2}O{sub 3} films grown above 300 °C were crystalline with the γ-Al{sub 2}O{sub 3} phase. In situ x-ray photoelectron spectroscopy was used to characterize the Al{sub 2}O{sub 3}/STO interface, indicating that a Ti{sup 3+} feature in the Ti 2p spectrum of STO was formed after 2–3 ALD cycles of Al{sub 2}O{sub 3} at 345 °C and even after the exposure to trimethylaluminum alone at 300 and 345 °C. The interface quasi-2-DEG is metallic and exhibits mobility values of ∼4 and 3000 cm{sup 2} V{sup −1} s{sup −1} at room temperature and 15 K, respectively. The interfacial conductivity depended on the thickness of the Al{sub 2}O{sub 3} layer. The Ti{sup 3+} signal originated from the near-interfacial region and vanished after annealing in an oxygen environment.

36 MATERIALS SCIENCE↗

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

The behavior of dislocations in a GaN layer grown on a 4-inch Si(111) substrate with an AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor deposition was observed by transmission electron microscopy. Cross-sectional observation indicated that a drastic decrease in the dislocation density occurred in the GaN layer. The reaction of a dislocation (b=1/3[-211-3]) and anothor dislocation (b =1/3[-2113]) to form one dislocation (b =2/3[-2110]) in the GaN layer was clarified by plan-view observation using weak-beam dark-field and large-angle convergent-beam diffraction methods.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al{sub 2}O{sub 3}

The greatest challenge for improving the power conversion efficiency of Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe)/CdS/ZnO thin film solar cells is increasing the open circuit voltage (V{sub OC}). Probable leading causes of the V{sub OC} deficit in state-of-the-art CZTSSe devices have been identified as bulk recombination, band tails, and the intertwined effects of CZTSSe/CdS band offset, interface defects, and interface recombination. In this work, we demonstrate the modification of the CZTSSe absorber/CdS buffer interface following the deposition of 1 nm-thick Al{sub 2}O{sub 3} layers by atomic layer deposition (ALD) near room temperature. Capacitance-voltage profiling and quantum efficiency measurements reveal that ALD-Al{sub 2}O{sub 3} interface modification reduces the density of acceptor-like states at the heterojunction resulting in reduced interface recombination and wider depletion width. Indications of increased V{sub OC} resulting from the modification of the heterojunction interface as a result of ALD-Al{sub 2}O{sub 3} treatment are presented. These results, while not conclusive for application to state-of-the-art high efficiency CZTSSe devices, suggest the need for further studies as it is probable that interface recombination contributes to reduced V{sub OC} even in such devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Inter-layer synchronization in multiplex networks of identical layers

Inter-layer synchronization is a distinctive process of multiplex networks whereby each node in a given layer evolves synchronously with all its replicas in other layers, irrespective of whether or not it is synchronized with the other units of the same layer. We analytically derive the necessary conditions for the existence and stability of such a state, and verify numerically the analytical predictions in several cases where such a state emerges. We further inspect its robustness against a progressive de-multiplexing of the network, and provide experimental evidence by means of multiplexes of nonlinear electronic circuits affected by intrinsic noise and parameter mismatch.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Probing electronic and dielectric properties of ultrathin Ga 2 O 3 /Al 2 O 3 atomic layer stacks made with in vacuo atomic layer deposition

Ultrathin (1–4 nm) films of wide-bandgap semiconductors are important to many applications in microelectronics, and the film properties can be sensitively affected by defects especially at the substrate/film interface. Motivated by this, an in vacuo atomic layer deposition (ALD) was developed for the synthesis of ultrathin films of Ga 2 O 3 /Al 2 O 3 atomic layer stacks (ALSs) on Al electrodes. It is found that the Ga 2 O 3 /Al 2 O 3 ALS can form an interface with the Al electrode with negligible interfacial defects under the optimal ALD condition whether the starting atomic layer is Ga 2 O 3 or Al 2 O 3 . Such an interface is the key to achieving an optimal and tunable electronic structure and dielectric properties in Ga 2 O 3 /Al 2 O 3 ALS ultrathin films. In situ scanning tunneling spectroscopy confirms that the electronic structure of Ga 2 O 3 /Al 2 O 3 ALS can have tunable bandgaps (E g ) between ~2.0 eV for 100% Ga 2 O 3 and ~3.4 eV for 100% Al 2 O 3 . With variable ratios of Ga:Al, the measured E g exhibits significant non-linearity, agreeing with the density functional theory simulation, and tunable carrier concentration. Furthermore, the dielectric constant of ultrathin Ga 2 O 3 /Al 2 O 3 ALS capacitors is tunable through the variation in the ratio of the constituent Ga 2 O 3 and Al 2 O 3 atomic layer numbers from 9.83 for 100% Ga 2 O 3 to 8.28 for 100% Al 2 O 3 . The high ε leads to excellent effective oxide thickness ~1.7–2.1 nm for the ultrathin Ga 2 O 3 /Al 2 O 3 ALS, which is comparable to that of high-K dielectric materials.

36 MATERIALS SCIENCE↗

Layer-dependent spin-resolved electronic structure of ferromagnetic triple-layered ruthenate Sr4Ru3O10

High-resolution angle- and spin-resolved photoemission spectroscopy (ARPES) of the triple-layered ruthenate Sr4Ru3O10 reveals features of the electronic structure that extend our understanding of the layered strontium ruthenates. The spectra near the Fermi energy are very different from the nonmagnetic analogues Sr2RuO4 and Sr3Ru2O7 with distinct Fermi surfaces for wide electronlike minority spin bands around the zone center and narrow holelike majority spin Fermi surface contours around the zone corners. The most dramatic results are two narrow spectral peaks ∼30 meV below the Fermi level, a spin-minority holelike band at the Brillouin zone center, and a spin-majority saddle-band van Hove singularity at the zone edge, which exhibits almost 100% spin polarization at low temperature, and a strong temperature dependent coherence-incoherence crossover attributed to Hund metal correlations. Quantitative comparison of the ARPES to spin-polarized density functional theory (DFT) calculations identify the specific antibonding and nonbonding orbital origins of the narrow bands, with a prediction of different spatial localization in the central and outer layers. This is shown to be consistent with experimental ARPES multizone matrix element intensity variations, and implicates outer-layer-specific control of the in-plane metamagnetism. The renormalization of the bands relative to the mean-field DFT, the demonstration of spin-polarized oxygen bands, and of spin-minority and spin-majority band-crossing hybridization provide a more complete picture of the magnetism which displays aspects of both delocalized and local moment behavior.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al{sub 2}O{sub 3} on GaSb(100)

In-situ monochromatic x-ray photoelectron spectroscopy, low energy electron diffraction, ion scattering spectroscopy, and transmission electron microscopy are used to examine the GaSb(100) surfaces grown by molecular beam epitaxy after thermal desorption of a protective As or Sb layer and subsequent atomic layer deposition (ALD) of Al{sub 2}O{sub 3}. An antimony protective layer is found to be more favorable compared to an arsenic capping layer as it prevents As alloys from forming with the GaSb substrate. The evolution of oxide free GaSb/Al{sub 2}O{sub 3} interface is investigated by “half-cycle” ALD reactions of trimethyl aluminum and deionized water.

36 MATERIALS SCIENCE↗

Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization

Atomic layer deposition was used to grow epitaxial layers of anatase (001) TiO{sub 2} on the surface of SrTiO{sub 3} (100) crystals with a 3% lattice mismatch. The epilayers grow as anatase (001) as confirmed by x-ray diffraction. Atomic force microscope images of deposited films showed epitaxial layer-by-layer growth up to about 10 nm, whereas thicker films, of up to 32 nm, revealed the formation of 2–5 nm anatase nanocrystallites oriented in the (001) direction. The anatase epilayers were used as substrates for dye sensitization. The as received strontium titanate crystal was not sensitized with a ruthenium-based dye (N3) or a thiacyanine dye (G15); however, photocurrent from excited state electron injection from these dyes was observed when adsorbed on the anatase epilayers. These results show that highly ordered anatase surfaces can be grown on an easily obtained substrate crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Influence of PEDOT:PSS on the effectiveness of barrier layers prepared by atomic layer deposition in organic light emitting diodes

Organic light emitting diodes (OLEDs) are well suited for energy saving lighting applications, especially when thinking about highly flexible and large area devices. In order to avoid the degradation of the organic components by water and oxygen, OLEDs need to be encapsulated, e.g., by a thin sheet of glass. As the device is then no longer flexible, alternative coatings are required. Atomic layer deposition (ALD) is a very promising approach in this respect. The authors studied OLEDs that were encapsulated by 100 nm Al{sub 2}O{sub 3} deposited by ALD. The authors show that this coating effectively protects the active surface area of the OLEDs from humidity. However, secondary degradation processes still occur at sharp edges of the OLED stack where the extremely thin encapsulation layer does not provide perfect coverage. Particularly, the swelling of poly(3,4-ethylenedioxythiophene) mixed with poly(styrenesulfonate), which is a popular choice for the planarization of the bottom electrode and at the same time acts as a hole injection layer, affects the effectiveness of the encapsulation layer.

36 MATERIALS SCIENCE↗

Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition

Radical-enhanced atomic layer deposition uses oxygen radicals generated by a remote microwave-induced plasma as an oxidant to change the surface reactions of the alternately supplied trimethylaluminum precursor and oxygen radicals on a Ge substrate, which leads to the spontaneous formation of an aluminum germanate layer. In this paper, the effects that low-energy ions, supplied from a remote microwave plasma to the substrate along with the oxygen radicals, have on the surface reactions were studied. From a comparative study of aluminum oxide deposition under controlled ion flux irradiation on the deposition surface, it was found that the ions enhance the formation of the aluminum germanate layer. The plasma potential measured at the substrate position by the Langmuir probe method was 5.4 V. Assuming that the kinetic energy of ions arriving at the substrate surface is comparable to that gained by this plasma potential, such ions have sufficient energy to induce exchange reactions of surface-adsorbed Al atoms with the underlying Ge atoms without causing significant damage to the substrate. This ion-induced exchange reaction between Al and Ge atoms is inferred to be the background kinetics of the aluminum germanate formation by radical-enhanced atomic layer deposition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Atomic layer deposition of alternative glass microchannel plates

The technique of atomic layer deposition (ALD) has enabled the development of alternative glass microchannel plates (MCPs) with independently tunable resistive and emissive layers, resulting in excellent thickness uniformity across the large area (20 × 20 cm), high aspect ratio (60:1 L/d) glass substrates. Furthermore, the use of ALD to deposit functional layers allows the optimal substrate material to be selected, such as borosilicate glass, which has many benefits compared to the lead-oxide glass used in conventional MCPs, including increased stability and lifetime, low background noise, mechanical robustness, and larger area (at present up to 400 cm{sup 2}). Resistively stable, high gain MCPs are demonstrated due to the deposition of uniform ALD resistive and emissive layers on alternative glass microcapillary substrates. The MCP performance characteristics reported include increased stability and lifetime, low background noise (0.04 events cm{sup −2} s{sup −1}), and low gain variation (±5%)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗