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At least 289 records · Page 16

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NASA NTRS2011

Carbon Nanofibers Synthesized on Selective Substrates for Nonvolatile Memory and 3D Electronics

A plasma-enhanced chemical vapor deposition (PECVD) growth technique has been developed where the choice of starting substrate was found to influence the electrical characteristics of the resulting carbon nanofiber (CNF) tubes. It has been determined that, if the tubes are grown on refractory metallic nitride substrates, then the resulting tubes formed with dc PECVD are also electrically conducting. Individual CNFs were formed by first patterning Ni catalyst islands using ebeam evaporation and liftoff. The CNFs were then synthesized using dc PECVD with C2H2:NH3 = [1:4] at 5 Torr and 700 C, and approximately equal to 200-W plasma power. Tubes were grown directly on degenerately doped silicon <100> substrates with resistivity rho approximately equal to 1-5 meterohm-centimeter, as well as NbTiN. The approximately equal to 200-nanometer thick refractory NbTiN deposited using magnetron sputtering had rho approximately equal to 113 microohm-centimeter and was also chemically compatible with CNF synthesis. The sample was then mounted on a 45 beveled Al holder, and placed inside a SEM (scanning electron microscope). A nanomanipulator probe stage was placed inside the SEM equipped with an electrical feed-through, where tungsten probes were used to make two-terminal electrical measurements with an HP 4156C parameter analyzer. The positive terminal nanoprobe was mechanically manipulated to physically contact an individual CNF grown directly on NbTiN as shown by the SEM image in the inset of figure (a), while the negative terminal was grounded to the substrate. This revealed the tube was electrically conductive, although measureable currents could not be detected until approximately equal to 6 V, after which point current increased sharply until compliance (approximately equal to 50 nA) was reached at approximately equal to 9.5 V. A native oxide on the tungsten probe tips may contribute to a tunnel barrier, which could be the reason for the suppressed transport at low biases. Currents up to approximately 100 nA could be cycled, which are likely to propagate via the tube surface, or sidewalls, rather than the body, which is shown by the I-V in figure (a). Electrical conduction via the sidewalls is a necessity for dc NEMS (nanoelectromechanical system) applications, more so than for the field emission applications of such tubes. During the tests, high conductivity was expected, because both probes were shorted to the substrate, as shown by curve 1 in the I-V characteristic in figure (b). When a tube grown on NbTiN was probed, the response was similar to the approximately equal to 100 nA and is represented by curve 2 in figure (b), which could be cycled and propagated via the tube surface or the sidewalls. However, no measureable currents for the tube grown directly on Si were observed as shown by curve 3 in figure (b), even after testing over a range of samples. This could arise from a dielectric coating on the sidewalls for tubes on Si. As a result of the directional nature of ion bombardment during dc PECVD, Si from the substrate is likely re-sputtered and possibly coats the sidewalls.

Kaul, Anupama B.↗

NASA NTRS1997

Fuel Cell Power Plant Initiative: Solid Oxide Fuel Cell/Logistics Fuel Processor 27 kWe Power System Demonstration for ARPA - Volume 1

This report describes the successful testing of a 27 kWe Solid Oxide Fuel Cell (SOFC) generator fueled by natural gas and/or a fuel gas produced by a brassboard logistics fuel preprocessor (LFP). The test period began on May 24, 1995 and ended on February 26, 1996 with the successful completion of all program requirements and objectives. During this time period, this power system produced 118.2 MWh of electric power. No degradation of the generator's performance was measured after 5582 accumulated hours of operation on these fuels: local natural gas - 3261 hours, jet fuel reformate gas - 766 hours, and diesel fuel reformate gas - 1555 hours. This SOFC generator was thermally cycled from full operating temperature to room temperature and back to operating temperature six times, because of failures of support system components and the occasional loss of test site power, without measurable cell degradation. Numerous outages of the LFP did not interrupt the generator's operation because the fuel control system quickly switched to local natural gas when an alarm indicated that the LFP reformate fuel supply had been interrupted. The report presents the measured electrical performance of the generator on all three fuel types and notes the small differences due to fuel type. Operational difficulties due to component failures are well documented even though they did not affect the overall excellent performance of this SOFC power generator. The final two appendices describe in detail the LFP design and the operating history of the tested brassboard LFP.

Veyo, S.E.↗

NASA NTRS1979

Electrical Characterization of Hughes HCMP 1852D and RCA CDP1852D 8-bit, CMOS, I/O Ports

Twenty-five Hughes HCMP 1852D and 25 RCA CDP1852D 8-bit, CMOS, I/O port microcircuits underwent electrical characterization tests. All electrical measurements were performed on a Tektronix S-3260 Test System. Before electrical testing, the devices were subjected to a 168-hour burn-in at 125 C with the inputs biased at 10V. Four of the Hughes parts became inoperable during testing. They exhibited functional failures and out-of-range parametric measurements after a few runs of the test program.

Stokes, R. L.↗

NASA NTRS2005

Characterization of an Electroanalytical Instrument Suite Searching for Water and Life on Mars

Seeking the existence of life on other planets is an essential part of NASA's research. Our terrestrial experience suggests that water is a mandatory resource for life to exist and thrive. However, instruments capable of detecting water at the levels likely to be present on Mars are lacking. This project tests the possibility of using electrical measurements of soils, at variable frequencies, as a water detector. Generally, the electrical resistance of soils can be described as a combination of resistance and capacitance, which can be described by a vector including a magnitude and (phase) angle. By specifically studying the impedance measurements and phase angles of different types of soil, spiked with varying concentrations of dissolved ions, measurements can be taken to provide an idea of the behavior of dry Martian soils. The presentation will describe the experimental technique, apparatus and procedures, as well as results conducted to calibrate the instrument and to establish sample preparation protocols.

Bostic, Heidi E.↗

DOE OSTI2024

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have attracted interest as non-volatile memory for microelectronics due to ease of integration into back-end-of-line (BEOL) complementary metal oxide semiconductor fabrication. This work examines asymmetric electrode NbN/HZO/Nb devices with 7 nm thick HZO as FTJs in a memory structure, with an output resistance that can be controlled by read and write voltages. The individual FTJs are measured to have a tunneling electroresistance of 10 during the read state without significant filament conduction formation and reasonable ferroelectric performance. Endurance and remanent polarizations of up to 10 5 cycles and 20 μC/cm 2 , respectively, are measured and are shown to be dependent on the cycling voltage. Electrical measurements demonstrate how magnitude of the write pulse can modulate the high state resistance and the read pulse influences both resistance values as well as separation of resistance states. Then, by using two opposite switching FTJ devices in series, a programmable nonvolatile resistor divider is demonstrated. Measurements of these two FTJ unit memory cells show wide applicability to a BEOL microfabrication process for a re-readable, rewritable, and nonvolatile memory cell.

42 ENGINEERING↗

DOE OSTI2021

Particle charge distributions in the effluent of a flow-through atmospheric pressure low temperature plasma

Atmospheric pressure low-temperature plasmas are often utilized to perform particle synthesis, treatment, and removal. It is well-known that dust particles are highly negatively charged in these plasmas; however, little is known about dust particle charging behavior as particles leave the plasma volume and pass through the spatial afterglow region. In this work, monodisperse particles of various sizes and work functions were introduced into an atmospheric pressure radiofrequency capacitively coupled flow-through plasma. Dust particle electrical mobility distributions downstream of the flow-through plasma were measured utilizing a differential mobility analyzer in conjunction with a condensation particle counter at various gas flow velocities. Charge distributions were determined from the measured electrical mobility distributions. Experiments confirm that particles become less negatively charged, and even net-positively charged after leaving the plasma volume, with a distribution that follows a shifted Boltzmann charge distribution. Additionally, particle charge in the effluent of the flow-through plasma is negligibly dependent on work function but highly size and flow velocity dependent. Larger particles were shown to have a higher magnitude of charge under all studied conditions; however, particle polarity was switchable by varying gas flow velocity. The charging dynamics were simulated utilizing a constant number Monte Carlo model that accounts for electron temperature decay and the transition from ambipolar to free diffusion of electrons and ions in the spatial afterglow. Simulation results also suggest that, at the same flow velocity, larger particles obtain a greater magnitude of charge, negative or positive. Furthermore, the decrease in electron mobility and the difference between ion and electron convective loss rates create an ion-rich region in the plasma effluent that promotes ion–particle collisions and drives particle charge removal and even reversal of polarity. Larger particles more favorably collide with energetic species in these environments, which results in higher charge states.

atmospheric pressure low temperature plasma↗

NASA NTRS2010

Combined Aircraft and Satellite-Derived Storm Electric Current and Lightning Rates Measurements and Implications for the Global Electric Circuit

Using rotating vane electric field mills and Gerdien capacitors, we measured the electric field profile and conductivity during 850 overflights of electrified shower clouds and thunderstorms spanning regions including the Southeastern United States, the Western Atlantic Ocean, the Gulf of Mexico, Central America and adjacent oceans, Central Brazil, and the South Pacific. The overflights include storms over land and ocean, with and without lightning, and with positive and negative fields above the storms. The measurements were made with the NASA ER-2 and the Altus-II high altitude aircrafts. Peak electric fields, with lightning transients removed, ranged from -1.0 kV/m to 16 kV/m, with a mean value of 0.9 kV/m. The median peak field was 0.29 kV/m. Integrating our electric field and conductivity data, we determined total conduction currents and flash rates for each overpass. With knowledge of the storm location (land or ocean) and type (with or without lightning), we determine the mean currents by location and type. The mean current for ocean storms with lightning is 1.6 A while the mean current for land storms with lightning is 1.0 A. The mean current for oceanic storms without lightning (i.e., electrified shower clouds) is 0.39 A and the mean current for land storms without lightning is 0.13 A. Thus, on average, land storms with or without lightning have about half the mean current as their corresponding oceanic storm counterparts. Over three-quarters (78%) of the land storms had detectable lightning, while less than half (43%) of the oceanic storms had lightning. We did not find any significant regional or latitudinal based patterns in our total conduction currents. By combining the aircraft derived storm currents and flash rates with diurnal lightning statistics derived from the Lightning Imaging Sensor (LIS) and Optical Transient Detector (OTD) low Earth orbiting satellites, we reproduce the diurnal variation in the global electric circuit (i.e., the Carnegie curve) to within 4% for all but two short periods of time. This excellent agreement with the Carnegie curve was obtained without any tuning or adjustment of the satellite or aircraft data. Given our data and assumptions, mean contributions to the global electric circuit are 0.7 kA (ocean) and 1.1 kA (land) from lightning-producing storms, and 0.22 kA (ocean) and 0.04 (land) from electrified shower clouds, resulting in a mean total conduction current estimate for the global electric circuit of 2.0 kA. Breaking the results down into mean storm counts reveals 1100 for land storms with lightning, 530 for ocean storms without lightning, 390 for ocean storms with lightning, and 330 for land storms without lightning.

Mach, Douglas M.↗

NASA NTRS1990

Microspacecraft and Earth observation: Electrical Field (ELF) measurement project

There is a need for an inexpensive, extensive, long-lasting global electric field measurement system (ELF). The primary performance driver of this mission is the need to measure the attitude of each spacecraft in the Earth's electric field very accurately. In addition, it is necessary to know the electric charge generated by the satellite as it crosses the magnetic field lines (E equals V times B). In order to achieve the desired global coverage, a constellation of about 50 satellites in at least 18 different orbits will be used. To reduce the cost of each satellite, off-the-shelf, proven technology will be used whenever possible. Researchers have set a limit of $500,000 per satellite. Researchers expect the program cost, including the deployment of the entire constellation, to be less than $100 million. The minimum projected mission life is five years.

Source record↗

DOE OSTI2020

Creation of large temperature anisotropies in a laboratory plasma

Ion temperature anisotropy in an expanding magnetized plasma is investigated using laser induced fluorescence. Parallel and perpendicular ion velocity distribution functions (IVDFs) were measured simultaneously with high spatial resolution in the expanding plasma. Large ion temperature anisotropies (T ⊥i /T ∥i ~ 10) are observed in a conical region at the periphery of the expanding plasma plume. A simple 2D Boris stepper model that incorporates the measured electric field structure is able to reproduce the gross features of the measured perpendicular IVDFs. Here, a Nyquist stability analysis of the measured IVDFs suggests that multiple instabilities with k ⊥ρi ~ 1 and k ||ρi ~ 0.2 are likely to be excited in these plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

NASA NTRS1988

Lightning parameterization in a storm electrification model

The parameterization of an intracloud lightning discharge has been implemented in our Storm Electrification Model. The initiation, propagation direction, termination and charge redistribution of the discharge are approximated assuming overall charge neutrality. Various simulations involving differing amounts of charge transferred have been done. The effects of the lightning-produced ions on the hydrometeor charges, electric field components and electrical energy depend strongly on the charge transferred. A comparison between the measured electric field change of an actual intracloud flash and the field change due to the simulated discharge show favorable agreement.

Helsdon, John H., Jr.↗

NASA NTRS2002

Evaluation of Data Retention and Imprint Characteristics of FRAMs Under Environmental Stresses for NASA Applications

A major reliability issue for all advanced nonvolatile memory (NVM) technology devices including FRAMs is the data retention characteristics over extended period of time, under environmental stresses and exposure to total ionizing dose (TID) radiation effects. For this testing, 256 Kb FRAMs in 28-pin plastic DIPS, rated for industrial grade temperature range of -40 C to +85 C, were procured. These are two-transistor, two-capacitor (2T-2C) design FRAMs. In addition to data retention characteristics, the parts were also evaluated for imprint failures, which are defined as the failure of cells to change from a "preferred" state, where it has been for a significant period of time to an opposite state (e.g., from 1 to 0, or 0 to 1). These 256 K FRAMs were subjected to scanning acoustic microscopy (C-SAM); 1,000 temperature cycles from -65 C to +150 C; high temperature aging at 150 C, 175 C, and 200 C for 1,000 hours; highly accelerated stress test (HAST) for 500 hours; 1,000 hours of operational life test at 125 C; and total ionizing dose radiation testing. As a preconditioning, 10 K read/write cycles were performed on all devices. Interim electrical measurements were performed throughout this characterization, including special imprint testing and final electrical testing. Some failures were observed during high temperature aging test at 200 C, during HAST testing, and during 1,000 hours of operational life at 125 C. The parts passed 10 Krad exposure, but began showing power supply current increases during the dose increment from 10 Krad to 30 Krad, and at 40 Krad severe data retention and parametric failures were observed. Failures from various environmental group testing are currently being analyzed.

Sharma, Asbok K.↗

NASA NTRS2000

Evaluation of Data Retention and Imprint Characteristics of FRAMs Under Environmental Stresses for NASA Applications

A major reliability issue for all advanced nonvolatile memory (NVM) technology devices including FRAMs (Ferroelectric random access memories) is the data retention characteristics over extended period of time, under environmental stresses and exposure to total ionizing dose (TID) radiation effects. For this testing, 256 Kb FRAMs in 28-pin plastic DIPS, rated for industrial grade temperature range of -40 C to +85 C, were procured. These are two-transistor, two-capacitor (2T-2C) design FRAMs. In addition to data retention characteristics, the parts were also evaluated for imprint failures, which are defined as the failure of cells to change from a "preferred" state, where it has been for a significant period of time to an opposite state (e.g., from 1 to 0, or 0 to 1). These 256 K FRAMs were subjected to scanning acoustic microscopy (C-SAM); 1,000 temperature cycles from -65 C to +150 C; high temperature aging at 150 C, 175 C, and 200 C for 1,000 hours; highly accelerated stress test (HAST) for 500 hours; 1,000 hours of operational life test at 125 C; and total ionizing dose radiation testing. As a preconditioning, 10 K read/write cycles were performed on all devices. Interim electrical measurements were performed throughout this characterization, including special imprint testing and final electrical testing. Some failures were observed during high temperature aging test at 200 C, during HAST testing, and during 1,000 hours of operational life at 125 C. The parts passed 10 Krad exposure, but began showing power supply current increases during the dose increment from 10 Krad to 30 Krad, and at 40 Krad severe data retention and parametric failures were observed. Failures from various environmental group testing are currently being analyzed.

Sharma, Ashok K.↗

DOE OSTI2023

Electrical Interrogation of Thickness‐Dependent Multiferroic Phase Transitions in the 2D Antiferromagnetic Semiconductor NiI 2

Abstract 2D magnetic materials hold promise for quantum and spintronic applications. 2D antiferromagnetic materials are of particular interest due to their relative insensitivity to external magnetic fields and higher switching speeds compared to 2D ferromagnets. However, their lack of macroscopic magnetization impedes detection and control of antiferromagnetic order, thus motivating magneto‐electrical measurements for these purposes. Additionally, many 2D magnetic materials are ambient‐reactive and electrically insulating or highly resistive below their magnetic ordering temperatures, which imposes severe constraints on electronic device fabrication and characterization. Herein, these issues are overcome via a fabrication protocol that achieves electrically conductive devices from the ambient‐reactive 2D antiferromagnetic semiconductor NiI 2 . The resulting gate‐tunable transistors show band‐like electronic transport below the antiferromagnetic and multiferroic transition temperatures of NiI 2 , revealing a Hall mobility of 15 cm 2 V −1 s −1 at 1.7 K. These devices also allow direct electrical probing of the thickness‐dependent multiferroic phase transition temperature of NiI 2 from 59 K (bulk) to 28 K (monolayer).

2D magnets↗

DOE OSTI2020

Systematic over-estimation of lattice thermal conductivity in materials with electrically-resistive grain boundaries

Reducing the thermal conductivity κ of a material via nano-structuring to create small grain sizes is one of the most common strategies to improve thermoelectric materials. In such polycrystalline materials heat carrying phonons are scattered at the grain boundaries, which directly improves the thermoelectric quality factor and ultimately the figure-of-merit zT. In some cases, however, such as in Mg 3 Sb 2 , SnSe, and Mg 2 Si an opposite trend is found where higher lattice thermal conductivity reported in small grain polycrystalline material than in large grain or single crystal materials. This unphysical result indicates a problem with the conventional use of the Wiedemann–Franz law. Here, we trace this problematic finding to the electrical resistance at the grain boundaries, which leads to an overestimation of the phonon or lattice contribution of the thermal conductivity κ L . In materials with significant grain boundary electrical resistance, the estimated electronic contribution to the thermal conductivity LσT is low because the measured electrical conductivity σ is low. However within the grain electrons may still be transporting more heat than the total conductivity suggests, leading to an overestimation of κ L if the conventional κ L = κ – LσT is used with the measured values of κ and σ. Here, the overestimation of κL in small-grain samples is shown to be pervasive across a broad range of thermoelectric materials, including Mg 3 Sb 2 , Mg 2 Si, PbTe, PbSe, SnSe, (Hf,Zr)CoSb, CoSb 3 , and Bi 2 Te 3 alloys, and a correction is necessary to properly understand and predict their charge and heat transport.

36 MATERIALS SCIENCE↗

NASA NTRS1982

In situ measurements of thunderstorm electrical properties

An airplane sensor to measure the charge, size and two dimensional shape of precipitation particles and large cloud particles was developed. The basic design of the instrument includes: the transducers and analog electronics, the analog to digital conversion electronics and a microprocessor based system to run the electronics and load the digital data onto magnetic tape. Prototype instrumentation for the proposed lightning mapper satellite was tested by flying it in a U-2 aircraft over severe storms in Oklahoma. Flight data are compared to data from ground based instruments.

Marshall, T. C.↗

NASA NTRSDate not supplied

Early Burn-In Parasitic Conduction in 500 °C Durable SiC JFET ICs

All prior reports of long-term 500 °C operation of SiC JFET-R ICs have noted the existence of an initial “burn-in” period of changes in measured electrical characteristics for the first few hundred hours oven-testing. This work reports measurements of “burn-in parasitic MOSFET conduction” that can substantially impact the performance of some circuits during initial heat-up of JFET ICs, but then subsequently disappears after a few hours of operation at 500 °C. The behavior appears generally consistent with the known MOS phenomenon of bias-temperature driven redistribution of mobile ionic contamination. Approaches for further mitigating this initial burn-in conduction mechanism are discussed.

silicon carbide↗

NASA NTRSDate not supplied

Early Burn-In Parasitic Conduction in 500 °C Durable SiC JFET ICs

silicon carbide↗

DOE OSTI2021

Electro-optical measurement of intense electric field on a high energy pulsed power accelerator

We describe a direct electro-optical approach to measuring a strong 118 MV/m narrow pulse width (~ 33 ns) electric field in the magnetically insulated transmission line (MITL) of a pulsed power accelerator. To date, this is the highest direct external electric field measured electro-optically in a pulsed power accelerator, and it is between two to three orders of magnitude higher than values reported in comparable high energy scientific experiments. The MITL electric field is one of the most important operating parameters in an accelerator and is critical to understanding the properties of the radiation output. However, accurately measuring these high fields using conventional pulsed power diagnostics is difficult due to the strength of interfering particles and fields. Our approach uses a free-space laser beam with a dielectric crystal sensor that is highly immune to electromagnetic interference and does not require an external calibration. Here we focus on device theory, operating parameters, laboratory and pulsed power accelerator experiments as well as challenges that were overcome in the measurement environment.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗