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At least 289 records · Page 16

Magnetic compressibility of layered ferromagnet under pressure

This study systematically investigates the magnetic properties of the layered ferromagnet MnPt 5 As under pressure through a combination of experimental measurements and theoretical simulations. MnPt 5 As exhibits a ferromagnetic transition at approximately 301 K. Neutron diffraction measurements under applied pressures up to ∼4.9 GPa were performed over a temperature range from 320 to 100 K to probe its magnetic behavior. The results confirm that the Mn atoms maintain a ferromagnetic order under applied pressures, consistent with the ambient-pressure findings. However, magnetic anisotropy is notably suppressed. To further elucidate the compressibility of magnetic anisotropy in MnPt 5 As, x-ray diffraction under pressure was conducted. The results reveal that the c-axis undergoes a greater and more rapid compression compared to the ab -plane, which may contribute to the observed suppression of Mn ferromagnetic ordering along the c -axis. Additionally, theoretical calculations indicate that magnetic ordering exhibits a similar pressure-induced trend under applied pressure, supporting the experimental observations. These findings offer insights into the pressure-dependent magnetic properties and anisotropy of MnPt 5 As, with potential implications for strain engineering in Mn-based magnetic devices.

Electronic band structure↗

Switch leakage mitigation through differential cancellation

High speed analog-to-digital converters (ADC), switched-capacitor delay elements, and pulsed radio frequency (RF) systems all require switches in the signal path operating at high switching speeds, providing low resistance when enabled, and providing high signal isolation when disabled. In semiconductor technologies such as CMOS, the enabled state resistance directly scales with the sizing of the switch device, where a larger width switch provides a lower enabled state resistance. As the device width is increased, so is the capacitance formed between the gate, drain, and source of the device.

42 ENGINEERING↗

Autonomous Multistate Nanoencoding Using Combinatorial Ferroelectric Closure Domains in BiFeO 3

Recent advances in ferroic materials have identified topological defects as promising candidates for enabling additional functionalities in future electronic systems. The generation of stable and customizable polar topologies is needed to achieve multistates that enable beyond-binary device architectures. Here, in this study, we show how to autonomously pattern on-demand highly tunable striped closure domains in pristine rhombohedral-phase BiFeO 3 thin films through precise scanning of a biased atomic force microscopy tip along carefully designed paths. By employing this strategy, we generate and manipulate closed-loop structures with high spatial resolution in an automated manner, allowing the creation of highly tunable and intricate topological domain structures that exhibit distinct polarization configurations without the need for electrode deposition or complex heterostructure growth. As a proof-of-concept for ferroelectric beyond-binary memory devices, we use such topological domains as multistates, engineering an alphabet and automating the symbolic writing/reading process using autonomous microscopy. The resulting information density is compared with that of current commercially available memory devices, demonstrating the potential of ferroelectric topological domains for multistate information storage applications.

BiFeO3↗

The Path to Enlightenment: Progress and Opportunities in High Efficiency Halide Perovskite Light-Emitting Devices

Besides the flourishment in photovoltaics, halide perovskites hold great promise to compete with leading contenders among solution-processed emitters, such as organics and semiconductor colloidal nanocrystals, in the field of light emission. Halide perovskites exhibit outstanding optoelectronic properties, including high photoluminescence quantum yields, facile bandgap tunability, narrow emission line widths, and respectable carrier mobilities, promoting them to thrive in versatile light-emitting applications such as light-emitting diodes, lasers, X-ray scintillators, and circularly polarized light sources. Herein, we discuss the underlying physics of light emission in state-of-the-art perovskite light-emitting devices and focus on promising strategies for further improvement of device performance.

42 ENGINEERING↗

Modeling of the spray-induced wall stress acting on the ignition assistance device

This research introduces a novel wall-stress model called the Spray-Induced Wall Stress (SIWS) model, which considers the effects of spray-wall impingement and the resulting formation of wall stress within the Lagrangian spray modeling framework. The primary objective of this paper is to provide a mathematical description of the fundamental physics underlying the model. Subsequently, the proposed model is validated using existing experimental data. Here, the remainder of the study focuses on the practical application of the model to an ignition assistance device. Specifically, this device is installed in a compression ignition engine and designed to enhance ignition in aviation-fueled high-altitude aircraft propulsion systems. The research sheds light on the mechanical impulse caused by the high-speed impact of the spray jet, leading to the accumulation of mechanical stress on the rigid body of the ignition assistance device. Previous studies on fluid-structure interaction have only considered the interaction between the gas phase and the solid wall. However, the SIWS model incorporates the additional impact of the impinging liquid spray jet. Consequently, the simulated stress distribution on the ignition assistance device can be estimated by considering both the gas-phase-induced term and the spray-induced term simultaneously.

33 ADVANCED PROPULSION SYSTEMS↗

High-fidelity qutrit entangling gates for superconducting circuits

Ternary quantum information processing in superconducting devices poses a promising alternative to its more popular binary counterpart through larger, more connected computational spaces and proposed advantages in quantum simulation and error correction. Although generally operated as qubits, transmons have readily addressable higher levels, making them natural candidates for operation as quantum three-level systems (qutrits). Recent works in transmon devices have realized high fidelity single qutrit operation. Nonetheless, effectively engineering a high-fidelity two-qutrit entanglement remains a central challenge for realizing qutrit processing in a transmon device. In this work, we apply the differential AC Stark shift to implement a flexible, microwave-activated, and dynamic cross-Kerr entanglement between two fixed-frequency transmon qutrits, expanding on work performed for the ZZ interaction with transmon qubits. We then use this interaction to engineer efficient, high-fidelity qutrit CZ † and CZ gates, with estimated process fidelities of 97.3(1)% and 95.2(3)% respectively, a significant step forward for operating qutrits on a multi-transmon device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

An Innovative High Throughput Genome Releaser for Rapid and Efficient PCR Screening

High-throughput PCR screening is vital in synthetic biology and metabolic engineering as it allows researchers to rapidly analyze and detect numerous targeted genetic mutation in the genome. Current challenges for high-throughput PCR screening in synthetic biology include efficiently preparing genomic DNA, optimizing protocols for diverse sample types, managing contamination risks, and effectively analyzing the large volumes of data generated while ensuring consistent and accurate results. In this study, we present the development of a High Throughput Genome Releaser (HTGR), an innovative device addressing common challenges in screening PCR. This genome DNA releaser is designed based on a squash method for rapid, cost-effective, and efficient DNA release, optimized for subsequent PCR reactions. After experimenting with various synthetic materials, we selected a plastic that closely replicates the smooth surface and compression properties of microscope slides, ensuring reliable performance. We engineered a device featuring a 96-Well Plate and a shear applicator, operable both manually and automatically, and compatible with standard liquid-handling robot platform. This compatibility enhances ease of use in high-throughput PCR workflows. Additionally, we developed software to support its automatic functions. Our results demonstrated that the specially engineered 96-Well Plate and HTGR can effectively squash fungal spores , which release enough genome DNA for PCR screening. The genome releaser facilitates the preparation of PCR-amplifiable genomic DNA substrate from 96 samples within minutes, eliminates the need for extraction buffers, and is adaptable to a wide range of microorganisms and cells, which could significantly advance biomanufacturing processes.

Yuan, Guoliang [BATTELLE (PACIFIC NW LAB)]↗

Tailoring Molecular-Scale Contact at Perovskite/Polymeric Hole Transporting Material Interface for Efficient Solar Cells

Perovskite solar cells (PSCs) have delivered more than 25% of power conversion efficiency (PCE) and incorporating polymers as hole transporting layers (HTLs) can further enhance the stability of devices towards the goal of commercialization. Among various polymeric hole transporting materials, poly(triaryl amine) (PTAA) is one of the promising HTL candidates with good stability; however, the hydrophobicity of PTAA causes problematic interfacial contact with perovskite, limiting the device performance. Using molecular side-chain engineering, we successfully constructed a uniform two-dimensional (2D) perovskite interlayer with conjugated ligands, between three-dimensional (3D) perovskites and PTAA. Further, employing conjugated ligands as cohesive elements, perovskite/PTAA interfacial adhesion was significantly improved. As a result, the thin and lateral extended 2D/3D heterostructure enabled the as-fabricated PTAA-based PSCs to achieve a PCE of 23.7%, improved from the 18% of reference devices. Owing to the increased ion migration energy barrier and conformal 2D coating, unencapsulated devices with the new ligands exhibited both superior thermal stability under 60°C heating and moisture stability in ambient conditions.

14 SOLAR ENERGY↗

Quantitative modeling of gate-tunable cavity exciton-polaritons in transition-metal dichalcogenides

We performed a comprehensive real-space simulation study of propagative exciton-polaritons (EPs) of tungsten disulfide (WS 2 ) inside a Fabry–Pérot cavity. Through our simulations, we were able to construct the dispersion relation and determine the propagation length (L p ) of EPs, both of which show sensitive dependence on the applied gate voltage. We found that L p increases at higher gate voltages when excited at the exciton energy but shows opposite gate dependence at the trion energy. These observations are direct evidence of the coupling between the cavity mode with excitons and trions of WS 2 . Furthermore, we demonstrate a proof-of-concept device based on the tunable cavity EPs of WS 2 , which is promising for application as photonic transistors, modulators, or electrical-to-optical converters. Furthermore, our work unveils the real-space transport properties of gate-tunable cavity EPs and paves the way for future applications of EPs in nanophotonic devices and circuits.

42 ENGINEERING↗

In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks

Thermoelectric devices possess enormous potential to reshape the global energy landscape by converting waste heat into electricity, yet their commercial implementation has been limited by their high cost to output power ratio. No single “champion” thermoelectric material exists due to a broad range of material-dependent thermal and electrical property optimization challenges. While the advent of nanostructuring provided a general design paradigm for reducing material thermal conductivities, there exists no analogous strategy for homogeneous, precise doping of materials. Here, we demonstrate a nanoscale interface-engineering approach that harnesses the large chemically accessible surface areas of nanomaterials to yield massive, finely-controlled, and stable changes in the Seebeck coefficient, switching a poor nonconventional p- type thermoelectric material, tellurium, into a robust n -type material exhibiting stable properties over months of testing. These remodeled, n -type nanowires display extremely high power factors (~500 µW m -1 K -2 ) that are orders of magnitude higher than their bulk p -type counterparts.

42 ENGINEERING↗

Tailoring the Intermediate Phase to Control Formation of γ‑CsPbI3 Films

Controlling the crystallization pathway of inorganic CsPbI3 perovskite is essential for achieving high efficiency and stability in optoelectronic devices. Here, we report a solvent-engineering strategy that combines an antisolvent process with vacuum treatment (AVT) to modulate evaporation dynamics of the precursor, guiding the formation of highly oriented (CH3)2NH2PbI3 (DMAPbI3) and Cs4PbI6 intermediate phases. Synchrotron and in situ analyses revealed correlations between intermediate orientation and γ-CsPbI3 crystallinity. This directional crystallization pathway promotes vertical alignment and grain enlargement in γ-CsPbI3 films, resulting in fewer voids, lower defect densities, and reduced tensile strain. Photovoltaic devices based on AVT-processed films achieved a power conversion efficiency of 18.47% with a fill factor of 83.14% and retained 101.9% of their initial efficiency after 526 h without encapsulation. This study first reports that the quality of DMAPbI3 and Cs4PbI6 intermediates, controlled by combination of antisolvent and vacuum treatment, plays a crucial role in achieving high-quality γ-CsPbI3 films.

Yoon, Geon Woo↗

Electrochemical Reaction Engineering: A Lost (and Found) Art

The heart (or, perhaps more appropriately, the stomach) of any chemical manufacturing process is the reactor, where chemical and physical transformations occur under precisely controlled conditions. For non-electrochemical industrial processes, the design, optimization and operation of chemical reactors are extremely well developed, drawing upon the principles of chemistry, physics, calculus and economics. However, electrolytic processes face a dearth of well documented reaction engineering principles and design practices. This tutorial-style poster presentation introduces electrochemistry students and industrial practitioners to the "lost art" of reaction engineering and its organic extensions to electrochemical devices. Electrochemical reactor fundamentals and illustrative design equations are presented alongside a proposed five-step generalizable methodology for electrochemical reactor scale-up. Overall, this contribution seeks to educate electrochemistry researchers on practical means of reducing laboratory technologies to commercial practice.

electrochemistry↗

Performance Limits of an Alternating Current Electroluminescent Device

Abstract The use of an alternating current (AC) voltage is a simple, versatile method of producing electroluminescence from generic emissive materials without the need for contact engineering. Recently, it was shown that AC‐driven, capacitive electroluminescent devices with carbon nanotube network contacts can be used to generate and study electroluminescence from a variety of molecular materials emitting in the infrared‐to‐ultraviolet range. Here, performance trade‐offs in these devices are studied through comprehensive device simulations and illustrative experiments, enhancing understanding of the mechanism and capability of electroluminescent devices based on alternating as opposed to direct current (DC) schemes. AC‐driven electroluminescent devices can overcome several limitations of conventional DC‐driven electroluminescent devices, including the requirement for proper alignment of material energy levels and the need to process emitting materials into uniform thin films. By simultaneously optimizing device geometry, driving parameters, and material characteristics, the performance of these devices can be tuned. Importantly, the turn‐on voltage of AC‐driven electroluminescent devices approaches the bandgap of the emitting material as the gate oxide thickness is scaled, and internally efficient electroluminescence can be achieved using low‐mobility single‐layer emitter films with varying thicknesses and energy barrier heights relative to the contact.

Wang, Vivian↗

Preparation of Smart Materials by Additive Manufacturing Technologies: A Review

Over the last few decades, advanced manufacturing and additive printing technologies have made incredible inroads into the fields of engineering, transportation, and healthcare. Among additive manufacturing technologies, 3D printing is gradually emerging as a powerful technique owing to a combination of attractive features, such as fast prototyping, fabrication of complex designs/structures, minimization of waste generation, and easy mass customization. Of late, 4D printing has also been initiated, which is the sophisticated version of the 3D printing. It has an extra advantageous feature: retaining shape memory and being able to provide instructions to the printed parts on how to move or adapt under some environmental conditions, such as, water, wind, light, temperature, or other environmental stimuli. This advanced printing utilizes the response of smart manufactured materials, which offer the capability of changing shapes postproduction over application of any forms of energy. The potential application of 4D printing in the biomedical field is huge. Here, the technology could be applied to tissue engineering, medicine, and configuration of smart biomedical devices. Various characteristics of next generation additive printings, namely 3D and 4D printings, and their use in enhancing the manufacturing domain, their development, and some of the applications have been discussed. Special materials with piezoelectric properties and shape-changing characteristics have also been discussed in comparison with conventional material options for additive printing.

36 MATERIALS SCIENCE↗

2024 OES-Environmental 2024 State of the Science Report, Chapter 9: Beyond Single Marine Renewable Energy Devices: A System-wide Effects Approach

Global expansion of renewable energy, including marine renewable energy (MRE) technology development is necessary to mitigate the effects of climate change, facilitate a sustainable transition from carbon-based energy sources, and satisfy national energy security needs using locally produced electricity (European Commission 2022; IPCC 2023; IRENA 2020). As MRE engineering and research continue to focus on designing devices for deployment in nearshore and offshore waters around the world, researchers are also examining potential environmental effects on marine animals, habitats, and ecosystem processes. To date, the focus has been on interactions between small numbers of MRE devices (1-6) and the environment, such as collisions between animals and turbine blades, the effects of underwater noise and electromagnetic field (EMF) emissions, changes in habitats and oceanographic processes, risk of entanglement of animals, and displacement of animals (Boehlert & Gill 2010; Copping & Hemery 2020) (see Chapter 3).

16 TIDAL AND WAVE POWER↗