Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “device characterization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 289 records · Page 16

Thin-Film Photovoltaic Device Fabrication

This project will primarily involve the fabrication and characterization of thin films and devices for photovoltaic applications. The materials involved include Il-VI materials such as zinc oxide, cadmium sulfide, and doped analogs. The equipment ot be used will be sputtering and physical evaporations. The types of characterization includes electrical, XRD, SEM and CV and related measurements to establish the efficiency of the devices. The faculty fellow will be involved in a research team composed of NASA and University researchers as well as students and other junior researchers.

Scofield, John H.↗

Digital Miniature Cathode Ray Magnetometer

In this study, we introduce the concept and construction of an innovative Digital Miniature Cathode Ray Magnetometer designed for the precise detection of magnetic fields. This device addresses several limitations inherent to magnetic probes such as D.C. offset, nonlinearity, temperature drift, sensor aging, and the need for frequent recalibration, while capable of operating in a wide range of magnetic fields. The core principle of this device involves the utilization of a charged particle beam as the sensitivity medium. The system leverages the interaction of an electron beam with a scintillator material, which then emits visible light that is captured by an imager. The emitted scintillation light is captured by a CMOS sensor. This sensor not only records the scintillation light but also accurately determines the position of the electron beam, providing invaluable spatial information crucial for magnetic field mapping. The key innovation lies in the combination of electron beam projection, CMOS imager scintillation-based detection, and digital image signal processing. By employing this synergy, the magnetometer achieves remarkable accuracy, sensitivity and dynamic range. The precise position registration enabled by the CMOS sensor further enhances the device’s utility in capturing complex magnetic field patterns, allowing for 2D field mapping. In this work, the optimization of the probe’s performance is tailored for applications related to the characterization of insertion devices in light sources, including undulators.

Turqueti, Marcos↗

Performance Evaluation and Loss Modeling of WBG Devices based on a Novel Double-Pulse Test Method for Current Source Inverter

Careful measurements of the power device characteristics are necessary to accurately estimate a power converter's losses and efficiency. The conventional double-pulse test (DPT) circuit is a well-known method to implement this laboratory characterization of power devices and power modules. However, the switching characteristics of a power device depend on the power electronics circuit in which it is connected as well as the power circuit's physical layout, in addition to the device's internal structure. Hence, the conventional DPT circuit configuration, which is tailored for a standard voltage-source inverter (VSI), is not well-suited for a current-source inverter (CSI). This paper demonstrates a previously-proposed CSI-based DPT measurement technique that is appropriate for normal CSI operation. The characteristics of SiC MOSFETs and series-connected SiC Schottky diodes used in a CSI are measured using this improved technique while taking temperature effects into account to yield more accurate loss predictions. The CSI losses, including the switching and conduction losses of SiC MOSFETs and SiC Schottky diodes, have been modeled using this approach. The total CSI losses and efficiency have been estimated based on the CSI DPT results and loss models.

42 ENGINEERING↗

Electrochemical Characterization of Semiconductor Materials and Structures

For a period covering October 1, 1995 through August 12, 1996, the research group at CSU has conducted theoretical and experimental research on "Electrochemical Characterization of Semiconductor Materials and Structures. " The objective of this investigation was to demonstrate the applicability of electrochemical techniques for characterization of complex device structures based on InP and GaAs, Ge, InGaAs, InSb, InAs and InSb, including: (1) accurate EC-V net majority carrier concentration depth profiling, and (2) surface and bulk structural and electrical type defect densities. Our motivation for this R&D effort was as follows: "Advanced space solar cells and ThermoPhotoVoltaic (TPV) cells are fabricated using a large variety of III-V materials based on InP and GaAs for solar cells and low bandgap materials such as Ge, InGaAs, InAs and InSb for TPV applications. At the present time for complex device structures using these materials, however, there is no simple way to assess the quality of these structures prior to device fabrication. Therefore, process optimization is a very time consuming and a costly endeavor". Completion of this R&D effort would have had unquestionable benefits for space solar cell and TPV cells, since electrochemical characterization of the above cell structures, if properly designed can provide many useful structural and electrical material information virtually at any depth inside various layers and at the interfaces. This, could have been applied for step-by-step process optimization, which could have been used for fabrication of new generation high efficiency, low cost space PV and TPV cells.

Source record↗

A versatile and low-cost chip-to-world interface: enabling ICP-MS characterization of isotachophoretically separated lanthanides on a microfluidic device

Microfluidics offer novel and state-of-the-art pathways to process materials. Microfluidic systems drastically reduce timeframes and costs associated with traditional lab-scale efforts in the area of analytical sample preparations. The challenge arises in effectively connecting microfluidics to off-chip analysis tools to accurately characterize samples after treatment on-chip. Here, a fused silica microfluidic device (MFD) is connected to a fused-silica capillary in order to create a world-to-chip connection between the MFD and an inductively coupled plasma mass spectrometer (ICP-MS). Specifically, this is demonstrated by utilizing isotachophoresis (ITP) on a microfluidic chip to separate samples containing up to 14 lanthanides into elementally pure bands. The separated sample is successfully transferred across a 7 nL dead space at the microchip-capillary junction, such that separation resolution is maintained and even increased through the interface and into the ICP-MS, where the elemental composition of the separated sample is analysed. Lanthanide samples of varying composition are detected using ICP-MS, demonstrating this versatile and cost-effective approach that does not degrade the separation quality achieved on the MFD. This simple and inexpensive connection enables fast, low-cost sample preparation immediately prior to injection into an ICP-MS or other analytical instruments.

Lackey, Hope E.↗

A Scalable & Non-Destructive Characterization Strategy to Study Semiconductor/Dielectric Interfaces and Predict Wafer-Level Device Performance

The defect density present at the dielectric-semiconductor interface in an MOS structure directly influences the channel carrier characteristics in semiconductor devices, especially in wide bandgap material systems used in power devices. While these trap defects are typically quantified through electrical characterization of MOS-capacitor test structures, this treatment offers very little insight into the physical nature of interface defects. Such shortcomings demand a physical characterization strategy to guide fabrication optimization. X-ray photoelectron spectroscopy (XPS) is suggested as a viable technique to determine chemical data for dielectric interfaces formed using atomic layer deposition (ALD) on GaN substrates. Previously, 1-D XPS characterization has confirmed the presence of a Ga x O y interlayer between ALD dielectrics and the GaN substrate. In this work, XPS data is serially collected to form 2-D images of an ALD-Al 2 O 3 /GaN interface as a proof-of-concept experiment for in-situ XPS quality monitoring during ALD processing. The information provided by this work reveals some of the challenges for incorporating XPS characterization as an in-situ strategy during fabrication of GaN-based devices. Separately, electrical mapping of a 2-D array of ALD-Al 2 O 3 /GaN MOS-capacitor devices provide a means to quantify the spatial variations in interface quality across a single wafer. Physical characterization techniques, such as time-of-flight secondary ion mass spectroscopy, provide additional chemical information about the Al 2 O 3 /Ga x O y /GaN structure that complement the electrical mapping results. This analysis shows that a higher Ga x O y content correlates with higher interface state defects for trap energies deep in the band gap.

42 ENGINEERING↗

Photon counting with intensified charge coupled device (ICCD) – I. In-depth detector characterization

While the adsorption properties of transition metal catalysts have been widely studied, leading to the discovery of various scaling relations, descriptors of catalytic activity, and well-established computational models, a similar understanding of semiconductor catalysts has not yet been achieved. In this work, we present a high-throughput density functional theory investigation into the adsorption properties of 5 oxides of interest to the photocatalytic CO 2 reduction reaction: TiO 2 (rutile and anatase), SrTiO 3 , NaTaO 3 , and CeO 2 . Using a systematic approach, we exhaustively identify unique surfaces and construct adsorption structures to undergo geometry optimizations. We then perform a data-driven analysis, which reveals the presence of weak adsorption energy scaling relations, the propensity of adsorbates of interest to interact with oxygen surface sites, and the importance of slab deformation upon adsorption. Our findings are presented in the context of experimental observations and in comparison to previously studied classes of catalysts, such as pure metals and tellurium-containing semiconductors, and reinforce the need for a comprehensive approach to the study of site-specific surface phenomena on semiconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Characteristics of Non-Fullerene Acceptor-Based Organic Photovoltaic Active Layers Using X-ray Scattering and Solid-State NMR

With the recent development of non-fullerene acceptors, power conversion efficiencies of bulk-heterojunction organic solar cells have exceeded 18%. The morphology of the BHJ active layer, including packing, ordering, orientation, and phase behavior of the donor(s) and acceptor(s), plays critical roles in determining the device performance. We characterized the morphology of active layers consisting of mixtures of a PTB7/PTB7-Th (donor) and ITIC (acceptor) using grazing incidence wide-angle X-ray scattering, resonant soft X-ray scattering, and solid-state nuclear magnetic resonance (ssNMR) to correlate the morphology with device performance. PTB7-Th/ITIC shows a better device performance than that of PTB7/ITIC due to a smaller π-πstacking distance and smaller domain size of the phase separated morphology. One of PTB7/ITIC samples, processed from mixed solvents (chlorobenzene/benzene = 1:1 by volume), shows a possible partial miscibility and smaller domain size as revealed by ssNMR T 1ρ relaxation times, which is detrimental to device performance. ssNMR results showed that ITIC could crystallize into different forms depending on processing conditions, which may have implications on the manufacturing of devices using it as an ingredient, as well as its long-term stability in service.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules: Preprint

Insulated gate bipolar transistor (IGBT) power modules are devices commonly used for switching of high voltages and currents. Usage and environmental conditions can cause these power modules to degrade over time, and this gradual process may eventually lead to catastrophic failure of the device. This degradation process may cause some early performance symptoms related to the state of health of the power module, making it possible to detect reliability degradation of the IGBT module. Testing can be used to accelerate this process, permitting a rapid determination of whether specific declines in device reliability can be characterized. In this study, thermal cycling was conducted on multiple power modules simultaneously in order to assess the effect of thermal cycling on the degradation of the power module. In-situ monitoring of temperature was performed from inside each power module using high temperature thermocouples. Device imaging and characterization was performed along with temperature data analysis, to assess failure modes and mechanisms within the power modules. While the experiment was aimed to assess the potential damage effects of thermal cycling on die attach, results indicated that wirebond degradation was the life limiting failure mechanism.

33 ADVANCED PROPULSION SYSTEMS↗

Qualification of Laser Diode Arrays for Mercury Laser Altimeter

NASA's requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance of Quasi-CW, High-power, laser diode arrays under extended use is presented. We report the optical power over several hundred million pulse operation and the effect of power cycling and temperature cycling of the laser diode arrays. Data on the initial characterization of the devices is also presented.

Stephen, Mark↗

Characterization of an In-Situ Ground Terminal via a Geostationary Satellite

In 2015, the Space Communications and Navigation (SCaN) Testbed project completed an S-Band ground station located at the NASA Glenn Research Center in Cleveland, Ohio. This S-Band ground station was developed to create a fully characterized and controllable dynamic link environment when testing novel communication techniques for Software Defined Radios and Cognitive Communication Systems. In order to provide a useful environment for potential experimenters, it was necessary to characterize various RF devices at both the component level in the laboratory and at the system level after integration. This paper will discuss some of the laboratory testing of the ground station components, with a particular focus/emphasis on the near-field measurements of the antenna. It will then describe the methodology for characterizing the installed ground station at the system level via a Tracking and Data Relay Satellite (TDRS), with specific focus given to the characterization of the ground station antenna pattern, where the max TDRS transmit power limited the validity of the non-noise floor received power data to the antenna main lobe region. Finally, the paper compares the results of each test as well as provides lessons learned from this type of testing methodology.

Ground Station↗

Characterization of an In-Situ Ground Terminal via a Geostationary Satellite

In 2015, the Space Communications and Navigation (SCaN) Testbed project completed an S-Band ground station located at the NASA Glenn Research Center in Cleveland, Ohio. This S-Band ground station was developed to create a fully characterized and controllable dynamic link environment when testing novel communication techniques for Software Defined Radios and Cognitive Communication Systems. In order to provide a useful environment for potential experimenters, it was necessary to characterize various RF devices at both the component level in the laboratory and at the system level after integration. This paper will discuss some of the laboratory testing of the ground station components, with a particular focus emphasis on the near-field measurements of the antenna. It will then describe the methodology for characterizing the installed ground station at the system level via a Tracking and Data Relay Satellite (TDRS), with specific focus given to the characterization of the ground station antenna pattern, where the max TDRS transmit power limited the validity of the non-noise floor received power data to the antenna main lobe region. Finally, the paper compares the results of each test as well as provides lessons learned from this type of testing methodology.

Radiation Pattern Analysis↗

Machine Learning-Based Technique for Automated Sensor Characterization

The development of novel instrumentation requires an iterative cycle with three stages: design, prototyping, and testing. Recent advancements in simulation and nanofabrication techniques have significantly accelerated the design and prototyping phases. Nonetheless, detector characterization continues to be a major bottleneck in device development. During the testing phase, a significant time investment is required to characterize the device in different operating conditions and find optimal operating parameters. The total effort spent on characterization and parameter optimization can occupy a year or more of an expert s time. In this work, we present a novel technique for automated sensor calibration that aims to accelerate the testing stage of the development cycle. This technique leverages closed-loop Bayesian optimization (BO), using real-time measurements to guide parameter selection and identify optimal operating states. We demonstrate the method with a novel low-noise CCD, showing that the machine learning-driven tool can efficiently characterize and optimize operation of the sensor in a couple of days without supervision of a device expert.

Zepeda, Cuevas [Chicago U., KICP]↗

Automating Sensor Characterization with Bayesian Optimization

The development of novel instrumentation requires an iterative cycle with three stages: design, prototyping, and testing. Recent advancements in simulation and nanofabrication techniques have significantly accelerated the design and prototyping phases. Nonetheless, detector characterization continues to be a major bottleneck in device development. During the testing phase, a significant time investment is required to characterize the device in different operating conditions and find optimal operating parameters. The total effort spent on characterization and parameter optimization can occupy a year or more of an expert's time. In this work, we present a novel technique for automated sensor calibration that aims to accelerate the testing stage of the development cycle. This technique leverages closed-loop Bayesian optimization (BO), using real-time measurements to guide parameter selection and identify optimal operating states. We demonstrate the method with a novel low-noise CCD, showing that the machine learning-driven tool can efficiently characterize and optimize operation of the sensor in a couple of days without supervision of a device expert.

Cuevas-Zepeda, Julian [Chicago U., KICP; Chicago U↗

Multimode Characterization Approach for Understanding Cell-Level PV Performance and Degradation

Cell-level degradation processes impact the economic viability and large-scale deployment prospects for both established and emerging photovoltaic (PV) technologies. This project addresses the need to develop experimental and device-modeling approaches for studying cell-level degradation processes in photovoltaic (PV) devices using a variety of characterization techniques that provide access to complementary material and device properties. Our results demonstrate that by coupling characterization results with device modeling it is possible to develop comprehensive understanding of processes leading to performance limitations and degradation. This project developed a suite of novel measurement techniques including pulsed-light-bias operando X-ray and photoelectron spectroscopy (popXPS), light-biased scanning microwave impedance microscopy (sMIM), and near-field transport imaging (TI). In addition, operando characterization methodologies and in situ stressing capabilities have been developed and applied for techniques including electron-beam-induced current (EBIC), cathodoluminescence (CL), and Kelvin probe force microscopy (KPFM). Device-physics models were developed and applied to simulate correlative, multi-mode measurements to extract material and device parameters that control performance degradation. These characterization and modeling techniques were applied in a multi-mode approach to probe cell-level degradation mechanisms in Cd(Se,Te) and hybrid perovskite PV devices. Together these efforts contribute to foundational PV degradation science by establishing a framework for understanding PV performance degradation at the cell level and benefit the U.S. PV industry by providing resources in the form of novel experimental capabilities, knowledge gained, and available expertise that can accelerate research and development of improved PV device materials and architectures. The project provided a comprehensive understanding of degradation in baseline Cd(Se,Te) solar cells provided by our collaborators at Colorado State University (CSU). EBIC and CL-based measurements and revealed unusual collection and recombination profiles in these devices, which underwent significant changes with during stressing. KPFM and operando XPS measurements showed that device stressing permanently alters energy-band alignments at the (Mg,Zn)O/Cd(Se,Te) interface, which in turn account for an observed loss in fill factor. Studies on hybrid perovskite devices were hampered to a significant extent by delays related to the pandemic. Nevertheless, a set of hybrid perovskite devices (supplied through an NREL-industry partnership) were stress tested and characterized with techniques including EBIC, sMIM, popXPS/popUPS and optically excited TI. Available results from these measurements informed the device modeling effort and suggest that defects and related band offsets at the C60/LiF/hybrid perovskite interface are the primary source of degradation in these devices.

14 SOLAR ENERGY↗

Nanoscale Tracking of the High-Temperature Spin-State Transition in LaCoO 3

The high-temperature spin and electronic transitions in LaCoO 3 have recently been leveraged to create neuromorphic (brain-inspired) devices. While these devices have shown the potential for impactful functionality in next-generation computing systems, the nanoscale dynamics of the spin and electronic transitions that underlie their operation are not well understood. Inhomogeneities related to interfaces, electrode contacts, strain, and crystal defects can all affect device performance, making nanoscale characterization of the transitions essential for producing consistent and reliable devices. Here, we demonstrate the first nanoscale in situ measurement of the spin transition in LaCoO 3 at device-relevant temperatures (25–325 °C) over length scales of tens of nanometers using STEM-EELS. This measurement is enabled by an Al 2 O 3 coating, which prevents unwanted reduction of the LaCoO 3 specimen at high temperature and vacuum. The detailed understanding of LaCoO 3 transition dynamics enabled by such measurements will be crucial for optimizing LaCoO 3 -based neuromorphic devices and increasing reliability for real-world application.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Sparse non-Markovian Noise Modeling of Transmon-Based Multi-Qubit Operations

The influence of noise on quantum dynamics is one of the main factors preventing current quantum processors from performing accurate quantum computations. Sufficient noise characterization and modeling can provide key insights into the effect of noise on quantum algorithms and inform the design of targeted error protection protocols. However, constructing effective noise models that are sparse in model parameters, yet predictive can be challenging. In this work, we present an approach for effective noise modeling of multi-qubit operations on transmon-based devices. Through a comprehensive characterization of seven devices offered by the IBM Quantum Platform, we show that the model can capture and predict a wide range of single- and two-qubit behaviors, including non-Markovian effects resulting from spatiotemporally correlated noise sources. The model’s predictive power is further highlighted through multi-qubit dynamical decoupling demonstrations and an implementation of the variational quantum eigensolver. As a training proxy for the hardware, we show that the model can predict expectation values within a relative error of 0.5%; this is a sevenfold improvement over default hardware noise models. Through these demonstrations, we highlight key error sources in superconducting qubits and illustrate the utility of reduced noise models for predicting hardware dynamics.

open quantum systems & decoherence↗

Comparison of Orion Flywheel to Commercially Available Flywheel Device

INTRODUCTION: The chosen exercise device for the Orion Multi-purpose Crew Vehicle (MPCV) for Artemis missions is the Orion Flywheel (OFW), which was selected in 2017 from a pool of exercise devices. The Orion Flywheel is to be installed in the MPCV for its first use during the Artemis II mission and will be utilized for subsequent Artemis missions. The OFW provides the capability to perform both resistive and aerobic exercises while taking up a small volume and not requiring power. Aerobic exercise consists of rowing while resistive exercise includes the deadlift, harness squat, and deadlift high pull among others. The efficacy of the OFW as an exercise countermeasure to spaceflight deconditioning has not yet been fully evaluated. A future HRP-funded study using head-down tilt bed rest is planned to evaluate the efficacy of the OFW to mitigate aerobic and muscular deconditioning. The OFW, made by KBR, is a specialized device that poses high costs for purchase and maintenance. The aim of the study is to determine if a commercially available alternative could be used as a backup for the OFW during the bed rest study or as an alternative in other studies. This study seeks to compare the loading profile and mechanics of a commercial flywheel device (kBox Pro) with the three resistance settings of the OFW using a controlled, instrumented setup to validate its acceptability as a backup. METHODS: An experimental setup was designed to simulate human use of the OFW. Flywheel devices can have varied actuated inertial mass and strap length. The inertial mass refers to the flywheel itself or the object that spins as the result of the movement of the strap. The OFW has three gears actuated with a lever, with the low gear used for aerobic rowing and the medium and high gears used for resistance exercises. These gears correspond to increasing flywheel inertia, which corresponds to a certain number and sizes of inertial plates on a commercial flywheel. The kBox Pro has varied sizes of inertial discs that are installed to the external shaft of the device and can be configured to roughly match the inertia seen in the OFW per gear setting. The strap length can be adjusted to allow for different ranges of motion. The experimental setup allows for the simulation of rowing, harness squats, and deadlift high pulls with corresponding exercise strap lengths. All three OFW gears are to be tested, as well as multiple combinations of kBox discs. The setup was created using a system of pulleys and cables to minimize friction loss. The system is actuated through the dropping of a connected mass which, through the pulley system, pulls the strap of the exercise device upwards as if a human was exercising. A string potentiometer and tensile force transducer are used to measure strap displacement and strap force, respectively. The masses dropped are exercise chains that simulate the decrease in force observed throughout a typical exercise. As the chains are lowered to the ground, they begin to spool and therefore are no longer subjecting the exercise device’s strap to their load. This setup was designed to provide realistic loads and protect the OFW from damage, an important precaution because it’s the only available unit for research and ground operations. Data is to be collected across simulated exercises and with different strap lengths, with the same conditions collected on both the OFW and the kBox Pro. RESULTS: Data collection is ongoing for the kBox and the Orion Flywheel. CONCLUSIONS: Study results will inform if the OFW and a kBox Pro device can be deemed mechanically similar. Depending on the results, additional data collection may be required to assess the user experience between the devices. A key result of this study is a mechanical characterization of the OFW device, demonstrating the load and force profile using a repeatable test method. This data will guide next steps on potential kBox Pro modifications needed to produce a comparable exercise experience to the OFW.

Exercise↗