Low-temperature deposition of low resistivity ZnSe films by reactive sputtering
The use of reactive dc magnetron cosputtering of Zn and the dopant In in an H2Se/Ar gaseous mixture is described. It is observed that initial deposition using pure Zn targets produced yellowish transparent ZnSe films on glass with a film resistivity of 10 to the 8th ohms cm and deposition using a Zn target doped with a fixed 1 percent of In produced ZnSe films with resistivities of about 10,000 ohms cm. The improvement of film conductivity by optimizing the In content in the ZnSe films is discussed; the ZnSe resistivity dependence on In flux is studied. Optical absorption/transmission measurements reveal a photon energy band gap of 2.65 eV at room temperature and X-ray diffraction show highly oriented polycrystalline films on glass with the c axis parallel to the plane of the film. Compositional analysis was performed and the Zn/Se ratio is measure as 48.8/49.0 with an In concentration of 1.16 percent. ZnSe films deposited on glass and conducting SnO2-coated glass substrates with a resistance of 20 ohms cm and a substrate temperature of 120 C have been fabricated.