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At least 289 records · Page 16

Physics-based compact modeling of electro-thermal memristors: Negative differential resistance, local activity, and non-local dynamical bifurcations

Leon Chua's Local Activity theory quantitatively relates the compact model of an isolated nonlinear circuit element, such as a memristor, to its potential for desired dynamical behaviors when externally coupled to passive elements in a circuit. However, the theory's use has often been limited to potentially unphysical toy models and analyses of small-signal linear circuits containing pseudo-elements (resistors, capacitors, and inductors), which provide little insight into required physical, material, and device properties. Furthermore, the Local Activity concept relies on a local analysis and must be complemented by examining dynamical behavior far away from the steady-states of a circuit. In this work, we review and study a class of generic and extended one-dimensional electro-thermal memristors (i.e., temperature is the sole state variable), re-framing the analysis in terms of physically motivated definitions and visualizations to derive intuitive compact models and simulate their dynamical behavior in terms of experimentally measurable properties, such as electrical and thermal conductance and capacitance and their derivatives with respect to voltage and temperature. Within this unified framework, we connect steady-state phenomena, such as negative differential resistance, and dynamical behaviors, such as instability, oscillations, and bifurcations, through a set of dimensionless nonlinearity parameters. In particular, we reveal that the reactance associated with electro-thermal memristors is the result of a phase shift between oscillating current and voltage induced by the dynamical delay and coupling between the electrical and thermal variables. We thus, demonstrate both the utility and limitations of local analyses to understand non-local dynamical behavior. Critically for future experimentation, the analyses show that external coupling of a memristor to impedances within modern sourcing and measurement instruments can dominate the response of the total circuit, making it impossible to characterize the response of an uncoupled circuit element for which a compact model is desired. However, these effects can be minimized by proper understanding of the Local Activity theory to design and utilize purpose-built instruments.

Brown, Timothy D. (ORCID:0000000347068355)↗

Strong interlayer charge transfer due to exciton condensation in an electrically isolated GaAs quantum well bilayer

We introduce a design of electrically isolated “floating” bilayer GaAs quantum wells (QW), in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of the gating voltage. At smaller gate voltages, the bilayer is fully electrically isolated from external electrodes by thick insulating barriers. This design permits full control of the total and differential densities of two coupled 2D electron systems. The floating bilayer design provides a unique approach for studying systems inaccessible by simple transport measurements. It also provides the ability to measure the charge transfer between the layers, even when the in-plane resistivities of the 2D systems diverge. We measure the capacitance and inter-layer tunneling spectra of the QW bilayer with independent control of the top and bottom layer electron densities. Our measurements display strongly enhanced inter-layer tunneling current at v T =1, a signature of exciton condensation of a strongly interlayer-correlated bilayer system. With fully tunable densities of individual layers, the floating bilayer QW system provides a versatile platform to access previously unavailable information on the quantum phases in electron bilayer systems.

42 ENGINEERING↗

Passive components for high temperature operation

The development of resistors, capacitors, and interconnect metalizations utilizing a low pressure chemical vapor deposition (LPCVD) process is described. The LPCVD process allows the passive components to be fabricated at temperatures higher than their highest operating temperatures. The deposition of thin films by LPCVD is accomplished by reacting one or more gases on the surface of a heated substrate. The substrates to be coated are placed on a graphite susceptor and then loaded into the center of a quartz reaction tube. The RF power is applied to the coil on the outside of the reaction tube which in turn is coupled into the graphite susceptor causing it to heat. Pressures of several torr or less are typical, with carrier flow rates of 0.1 to 2.0 liters/min. Nitrogen, hydrogen, and helium are typical carrier gases. These are controlled with mass flow controllers and the pressure is continuously monitored with a capacitive manometer. Materials selection and device testing are also discussed.

Raymond, L. S.↗

ISS And Space Environment Interactions Without Operating Plasma Contactor

The International Space Station (ISS) will be the largest, highest power spacecraft placed in orbit. Because of this the design of the electrical power system diverged markedly from previous systems. The solar arrays will operate at 160 V and the power distribution voltage will be 120 V. The structure is grounded to the negative side of the solar arrays so under the right circumstances it is possible to drive the ISS potential very negative. A plasma contactor has been added to the ISS to provide control of the ISS structure potential relative to the ambient plasma. The ISS requirement is that the ISS structure not be greater than 40 V positive or negative of local plasma. What are the ramifications of operating large structures with such high voltage power systems? The application of a plasma contactor on ISS controls the potential between the structure and the local plasma, preventing degrading effects. It is conceivable that there can be situations where the plasma contactor might be non-functional. This might be due to lack of power, the need to turn it off during some of the build-up sequences, the loss of functionality for both plasma contactors before a replacement can be installed, similar circumstances. A study was undertaken to understand how important it is to have the contactor functioning and how long it might be off before unacceptable degradation to ISS could occur. The details of interaction effects on spacecraft have not been addressed until driven by design. This was true for ISS. If the structure is allowed to float highly negative impinging ions can sputter exposed conductors which can degrade the primary surface and also generate contamination due to the sputtered material. Arcing has been known to occur on solar arrays that float negative of the ambient plasma. This can also generate electromagnetic interference and voltage transients. Much of the ISS structure and pressure module surfaces exposed to space is anodized aluminum. The anodization thickness is very thin to provide the required solar absorptance and emittance. For conditions where ISS structure can charge negative a large percentage of the array voltage, the dielectric strength of this layer is low, and dielectric breakdown (arcing) can occur. The energy stored capacitively in the structure can be delivered to the arc. The mechanisms by which this energy is delivered and how much of the energy is available hasn't been fully quantified. Questions have been raised regarding the possibility of whether a sustained arc might result due to current collected by the solar arrays from local plasma. It was postulated that even if dielectric breakdown didn't occur, impacts due to micrometeoroids and space debris could penetrate thin layers of dielectric on ISS and initiate an arc due to the coupling provided by the dense local plasma produced by the impact. This was proven in experiments conducted jointly by MSFC and Auburn University. A target chamber with a simulated ionospheric plasma and a biased, anodized aluminum plate and a 1-microfarad capacitor was used. The plate was then impacted by 75-micron particles accelerated to orbital velocity. Arc discharges were sustained for higher voltages but a threshold appears below which no discharge was initiated. Most items without an exposed power system will float electrically near the local plasma potential. This is true of the Space Shuttle, an Astronaut on EVA, and similar items. The structure of ISS might be at a large negative voltage. Therefore, capacitively stored energy can be transferred during docking, installing external boxes and equipment and Astronaut contact with ISS structure. The circumstances of when this can happen and the resulting effects are evaluated in this study. Also, a crewmember on EVA might be in the vicinity of an arc. All safety aspects of such an encounter including charging, molten particles from the arc site and EMI have been evaluated. This paper will report on the total results of this study focussed on the 4A configuration, scheduled to be complete in November, 2000. Interactions such as arcing, debris induced arcs, sustained arcs, sputtering, contamination from sputtering and arcing, docking interactions and Astronaut safety issues will all be addressed.

Carruth, M. R., Jr.↗

Energy storage and subharmonic oscillations in Josephson junctions

The energy stored in the magnetic and electric field near a superconducting point contact is typically the same magnitude as the coupling energy which produces the Josephson effect in the weakly coupled superconductors. One consequence of energy storage in both the electric and magnetic field is that the junction can oscillate at a fundamental frequency. The dynamics of these subharmonic oscillations have been studied for a model in which the magnetic and electric energies are represented as being stored in an inductance and a capacitance respectively. The model was studied numerically for various biasing conditions, and the behavior compared to experimental data. A simple analytic approximation was developed that gives physical insight into the mechanism that creates the subharmonic oscillations.

Dempsey, D. G.↗

BIB mixers

We have determined that the multi-pin 'microprocessor style' packages in which current Blocked Impurity Band (BIB) devices are mounted will not meet our IF bandwidth spec of greater than 2 GHz for a practical mixer. Hence we have started to repackage the Ga:Ge BIB devices in new microwave compatible packages. The smaller size of the microwave package mount necessitates cutting the BIB array down to include only the 3 smallest detectors: 0.2, 0.4, and 0.6 mm sq. A FIR beam incident at f/1.5 can be focussed on the smallest element for wavelengths shorter than 100 microns. A more typical (easier) beam convergence of f/3 will require 0.4 mm elements at 100 microns and 0.6 mm elements at 170 microns wavelength. Since the device capacitance (parasitic loss) scales with detector size, there is a tradeoff of speed of response and optical convenience. Our existing optics produce only the slower convergence beam, so we need to redesign the optical layout and are looking at long focal length all-reflective microscope objectives. BIB detectors and the edge-coupled microbolometers have restricted IF bandwidths, an order of magnitude less than what is possible with the Schottky-diode mixers we currently use for astronomical observations. Consequently the frequencies of the FIR laser lines must be close to the astronomical line of interest to be an effective Local Oscillator (LO). We have therefore begun a coordinated effort to discover and measure new FIR laser transition lines in close frequency coincidence with important astrophysical lines. Most of this effort involves pumping isotopic variants of known good laser molecules with laser lines from isotopic variants of CO2. We have been most successful in detecting new FIR lines in deuterated ammonia. One line in particular is very close to the frequency of HD rotational line at 2675 GHz.

Source record↗

Magnetocapacitance effect and magnetoelectric coupling in type-II multiferroic HoFeWO 6

We have investigated the multiferroicity and magnetoelectric (ME) coupling in HoFeWO 6 . With a noncentrosymmetric polar structure (space group Pna2 1 ) at room temperature, this compound shows an onset of electric polarization with an antiferromagnetic ordering at the Néel temperature (T N ) of 17.8 K. The magnetic properties of the polycrystalline samples were studied by DC and AC magnetization and heat capacity measurements. The metamagnetic behavior at low temperatures was found to be directly related to the dielectric properties of the compound. In particular, field-dependent measurements of capacitance show a magnetocapacitance (MC) effect with double-hysteresis loop behavior in direct correspondence with the magnetization. Our x-ray diffraction results show the Pna2 1 structure down to 8 K and suggest the absence of a structural phase transition across T N . Soft x-ray absorption spectroscopy and soft x-ray magnetic circular dichroism (XMCD) measurements at the Fe L 2,3 and Ho M 4,5 edges revealed the oxidation state of Fe and Ho cations to be 3+. Fe L 2,3 XMCD further shows that Fe 3+ cations are antiferromagnetically ordered in a noncollinear fashion with spins arranged 90° with respect to each other. Our findings show that HoFeWO 6 is a type-II multiferroic exhibiting a MC effect. Furthermore, the observed MC effect and the change in polarization by the magnetic field, as well as their direct correspondence with magnetization, further support the strong ME coupling in this compound.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Impedance Matching a Quarter Wave Resonant Receiver to Improve Efficiency in Unipolar Capacitive Wireless Power Transfer

Impedance matching techniques to achieve high performance in conventional wireless power transfer (WPT) systems are well established. These WPT systems are modelled as a lumped circuit, where the voltages/currents are approximately uniform and mostly unaffected by parasitic elements. However, a group of WPT techniques exist that utilize parasitic elements to form a highly resonant power transfer condition at high quality factors, exploiting a distributed circuit operation that can be modeled as a mutually coupled transmission line. A calculated matching network typically becomes unmatched when connected to the transmission line, as it changes the electrical structure of the coupled transmission line. This is particularly true for WPT systems that use quarter wave (QWR) or half wave resonators (HWR) for the receiver. Here we present one technique of matching to a mutually coupled transmission line where a parallel path is formed that improves the power transfer efficiency without severely altering the transmission line characteristics.

Wireless↗

Influence of chemical strains on the electrocaloric response, polarization morphology, tetragonality, and negative-capacitance effect of ferroelectric core-shell nanorods and nanowires

Using Landau-Ginzburg-Devonshire (LGD) approach, we proposed the analytical description of the influence of chemical strains on spontaneous polarization and the electrocaloric response in ferroelectric core-shell nanorods. We postulate that the nanorod core presents a defect-free single-crystalline ferroelectric material, and elastic defects are accumulated in the ultrathin shell, where they can induce tensile or compressive chemical strains. Finite-element modeling (FEM) based on the LGD approach reveals transitions of domain-structure morphology induced by chemical strains in the Ba Ti O 3 nanorods. Namely, tensile chemical strains induce and support the single-domain state in the central part of the nanorod, while the curled domain structures appear near the unscreened or partially screened ends of the rod. The vortexlike domains propagate toward the central part of the rod and fill it entirely, when the rod is covered by a shell with compressive chemical strains above some critical value. The critical value depends on the nanorod sizes, aspect ratio, and screening conditions at its ends. Both analytical theory and FEM predict that the tensile chemical strains in the shell increase the nanorod polarization, lattice tetragonality, and electrocaloric response well above the values corresponding to the bulk material. The physical reason for the increase is strong electrostriction coupling between the mismatch-type elastic strains induced in the core by chemical strains in the shell. Comparison with earlier XRD data confirmed an increase of the tetragonality ratio in tensile Ba Ti O 3 nanorods compared to the bulk material. Obtained analytical expressions, which are suitable for the description of strain-induced changes in a wide range of multiaxial ferroelectric core-shell nanorods and nanowires, can be useful for strain engineering of advanced ferroelectric nanomaterials for energy storage, harvesting, electrocaloric applications, and negative capacitance elements. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗

Improved formula for continuous-wave measurements of ultrasonic phase velocity

An improved formula for continuous-wave ultrasonic phase velocity measurements using contact transducers is derived from the transmission line theory. The effect of transducer-sample coupling bonds is considered for measurements of solid samples even though it is often neglected because of the difficulty of accurately determining the bond thickness. Computer models show that the present formula is more accurate than previous expressions. Laboratory measurements using contacting transducers with the present formula are compared to measurements using noncontacting (hence effectively correction-free) capacitive transducers. The results of the experiments verify the validity and accuracy of the new formula.

Chern, E. J.↗

Microgrid Tiered Circuits Effects for a Planned Housing Community in Puerto Rico

Puerto Rico faced a double strike from hurricanes Irma and Maria in 2017. The resulting damage required a comprehensive rebuild of electric infrastructure. There are plans and pilot projects to rebuild with microgrids to increase resilience. This paper provides a techno-economic analysis technique and case study of a potential future community in Puerto Rico that combines probabilistic microgrid design analysis with tiered circuits in building energy modeling. Tiered circuits in buildings allow electric load reduction via remote disconnection of non-critical circuits during an emergency. When coupled to a microgrid, tiered circuitry can reduce the chances of a microgrid's storage and generation resources being depleted. The analysis technique is applied to show 1) Approximate cost savings due to a tiered circuit structure and 2) Approximate cost savings gained by simultaneously considering resilience and sustainability constraints in the microgrid optimization. The analysis technique uses a resistive capacitive thermal model with load profiles for four tiers (tier 1-3 and non-critical loads). Three analyses were conducted using: 1) open-source software called Tiered Energy in Buildings and 2) the Microgrid Design Toolkit. For a fossil fuel based microgrid 30% of the total microgrid costs of 1.18 million USD were calculated where the non-tiered case keeps all loads 99.9% available and the tiered case keeps tier 1 at 99.9%, tier 2 at 95%, tier 3 at 80% availability, with no requirement on non-critical loads. The same comparison for a sustainable microgrid showed 8% cost savings on a 5.10 million USD microgrid due to tiered circuits. The results also showed 6-7% cost savings when our analysis technique optimizes sustainability and resilience simultaneously in comparison to doing microgrid resilience analysis and renewables net present value analysis independently. Though highly specific to our case study, similar assessments using our analysis technique can elucidate value of tiered circuits and simultaneous consideration of sustainability and resilience in other locations.

building energy modeling↗

Feedback Linearization in a Six Degree-of-Freedom MAG-LEV Stage

A six degree-of-freedom electromagnetically suspended motion control stage (the Angstrom Stage) has been designed and constructed for use in short-travel, high-resolution motion control applications. It achieves better than 0.5 nm resolution over a 100 micron range of travel. The stage consists of a single moving element (the platen) floating in an oil filled chamber. The oil is crucial to the stage's operation since it forms squeeze film dampers between the platen and the frame. Twelve electromagnetic actuators provide the forces necessary to suspend and servo the platen, and six capacitance probes measure its position relative to the frame. The system is controlled using a digital signal processing board residing in a '486 based PC. This digital controller implements a feedback linearization algorithm in real-time to account for nonlinearities in both the magnetic actuators and the fluid film dampers. The feedback linearization technique reduces a highly nonlinear plant with coupling between the degrees of freedom into one that is linear, decoupled, and setpoint independent. The key to this procedure is a detailed plant model. The operation of the feedback linearization procedure is transparent to the outer loop of the controller, and so a proportional controller is sufficient for normal operation. We envision applications of this stage in scanned probe microscopy and for integrated circuit measurement.

Ludwick, Stephen J.↗

Low noise tuned amplifier

A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge configuration. The bandpass amplifier may be operated with a signal injected into the gate terminal of the field effect transistor and the signal output taken from the output terminal of the operational amplifier. The operational amplifier stage appears as an inductive reactance, capacitive reactance and negative resistance at the non-inverting input of the operational amplifier, all of which appear in parallel with the resistive load of the field effect transistor.

Kleinberg, L. L.↗

Solid-state Image Sensor with Focal-plane Digital Photon-counting Pixel Array

A solid-state focal-plane imaging system comprises an NxN array of high gain. low-noise unit cells. each unit cell being connected to a different one of photovoltaic detector diodes, one for each unit cell, interspersed in the array for ultra low level image detection and a plurality of digital counters coupled to the outputs of the unit cell by a multiplexer(either a separate counter for each unit cell or a row of N of counters time shared with N rows of digital counters). Each unit cell includes two self-biasing cascode amplifiers in cascade for a high charge-to-voltage conversion gain (greater than 1mV/e(-)) and an electronic switch to reset input capacitance to a reference potential in order to be able to discriminate detection of an incident photon by the photoelectron (e(-))generated in the detector diode at the input of the first cascode amplifier in order to count incident photons individually in a digital counter connected to the output of the second cascade amplifier. Reseting the input capacitance and initiating self-biasing of the amplifiers occurs every clock cycle of an integratng period to enable ultralow light level image detection by the may of photovoltaic detector diodes under such ultralow light level conditions that the photon flux will statistically provide only a single photon at a time incident on anyone detector diode during any clock cycle.

Fossum, Eric R.↗

Plasma Generator Using Spiral Conductors

A plasma generator includes a pair of identical spiraled electrical conductors separated by dielectric material. Both spiraled conductors have inductance and capacitance wherein, in the presence of a time-varying electromagnetic field, the spiraled conductors resonate to generate a harmonic electromagnetic field response. The spiraled conductors lie in parallel planes and partially overlap one another in a direction perpendicular to the parallel planes. The geometric centers of the spiraled conductors define endpoints of a line that is non-perpendicular with respect to the parallel planes. A voltage source coupled across the spiraled conductors applies a voltage sufficient to generate a plasma in at least a portion of the dielectric material.

Szatkowski, George N.↗

Coupling of Adhesion and Anti-Freezing Properties in Hydrogel Electrolytes for Low-Temperature Aqueous-Based Hybrid Capacitors

Solid-state zinc-ion capacitors are emerging as promising candidates for large-scale energy storage owing to improved safety, mechanical and thermal stability and easy-to-direct stacking. Hydrogel electrolytes are appealing solid-state electrolytes because of eco-friendliness, high conductivity and intrinsic flexibility. However, the electrolyte/electrode interfacial contact and anti-freezing properties of current hydrogel electrolytes are still challenging for practical applications of zinc-ion capacitors. Here, we report a class of hydrogel electrolytes that couple high interfacial adhesion and anti-freezing performance. The synergy of tough hydrogel matrix and chemical anchorage enables a well-adhered interface between hydrogel electrolyte and electrode. Meanwhile, the cooperative solvation of ZnCl 2 and LiCl hybrid salts renders the hydrogel electrolyte high ionic conductivity and mechanical elasticity simultaneously at low temperatures. More significantly, the Zn||carbon nanotubes hybrid capacitor based on this hydrogel electrolyte exhibits low-temperature capacitive performance, delivering high-energy density of 39 Wh kg –1 at –60 °C with capacity retention of 98.7% over 10,000 cycles. With the benefits of the well-adhered electrolyte/electrode interface and the anti-freezing hydrogel electrolyte, the Zn/Li hybrid capacitor is able to accommodate dynamic deformations and function well under 1000 tension cycles even at –60 °C. This work provides a powerful strategy for enabling stable operation of low-temperature zinc-ion capacitors.

25 ENERGY STORAGE↗

Characterizing Density and Spatial Distribution of Trap States in Ta 3 N 5 Thin Films for Rational Defect Passivation

Tantalum nitride (Ta 3 N 5 ) has gained significant attention as a potential photoanode material, yet it has been challenged by material quality issues. Defect-induced trap states are detrimental to the performance of any semiconductor material. Beyond influencing the performance of Ta 3 N 5 films, defects can also accelerate the degradation in water during desired electrochemical applications. Defect passivation has provided an enormous boost to the development of many semiconductor materials but is currently in its infancy for Ta 3 N 5 . This is in part due to a lack of experimental understanding regarding the spatial and energetic distribution of trap states throughout Ta 3 N 5 thin films. Here, we employ drive-level capacitance profiling (DLCP) to experimentally resolve the spatial and energetic distribution of trap states throughout Ta 3 N 5 thin films. The density of deeper energetic traps is found to reach ∼2.5 to 6 × 10 22 cm –3 at the interfaces of neat Ta 3 N 5 thin films, over an order of magnitude greater than the bulk. In addition to the spatial profile of deep trap states, we report neat Ta 3 N 5 thin films to be highly n-type in nature, owning a free carrier density of ∼9.74 × 10 17 cm –3 . This information, coupled with the present understanding of native oxide layers on Ta 3 N 5 , has facilitated the rational design of a targeted passivation strategy that simultaneously provides a means for catalyst immobilization. Loading catalyst via silatrane moieties suppresses the density of defects at the surface of Ta 3 N 5 thin films by two orders of magnitude, while also reducing the free carrier density of films by over one order of magnitude, effectively dedoping the films to ∼2.40 × 10 16 cm –3 . The surface passivation of Ta 3 N 5 films translates to suppressed defect-induced trapping and recombination of photoexcited carriers, as determined through absorption, photoluminescence, and transient photovoltage. Here, this illustrates how developing a deeper understanding of the distribution and influence of defects in Ta 3 N 5 thin films has the potential to guide future works and ultimately accelerate the integration and development of high-performance Ta 3 N 5 thin film devices.

defect passivation↗

Three-dimensional structural damage localization system and method using layered two-dimensional array of capacitance sensors

A system and method for detecting damage to a structure is provided. The system includes a voltage source and at least one capacitor formed as a layer within the structure and responsive to the voltage source. The system also includes at least one sensor responsive to the capacitor to sense a voltage of the capacitor. A controller responsive to the sensor determines if damage to the structure has occurred based on the variance of the voltage of the capacitor from a known reference value. A method for sensing damage to a structure involves providing a plurality of capacitors and a controller, and coupling the capacitors to at least one surface of the structure. A voltage of the capacitors is sensed using the controller, and the controller calculates a change in the voltage of the capacitors. The method can include signaling a display system if a change in the voltage occurs.

Curry, Mark A↗