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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

An electronically tuned, stable 8415 MHz dielectric resonator FET oscillator for space applications

A voltage-controlled 8415-MHz FET oscillator stabilized by a dielectric resonator is described. The oscillator provides over 3.2-MHz linear electronic tuning range with a flat power output equal to +1.8 dBm (27 C, nominal), a single-sideband noise-to-carrier ratio of -68 dBc/Hz at 1 kHz off carrier, and a frequency-temperature coefficient of 0.54 parts per million/C over a -24 C to 75 C range. The oscillator withstood 150 Krads (Si) of gamma radiation with no significant performance degradation. The overall performance of the FET oscillator is far superior in many ways to that of an equivalent bipolar oscillator for space applications. For space applications, the FET dielectric resonator oscillator (DRO) is preferred over bipolar DRO because of its lower DC power consumption, better thermal frequency stability, linear electronic tunability, and higher RF output power capability.

Mysoor, Narayan R.↗
NASA NTRSDate not supplied

Thermoradiative Conversion for Space Power Systems

The thermoradiative cell is a new method for converting heat energy to electrical power, first detailed by Strandberg in 2015. The cell is structurally similar to a photovoltaic cell, in that it is a p-n junction semiconductor device, but thermodynamically operates in the reverse direction, converting the thermal dark current into electrical power by utilizing the recombination radiation from thermally-generated electron hole pairs to radiate waste heat to space. This technology may have application for space missions in converting thermal energy produced by a radioisotope source or from a nuclear reactor into power. The power and efficiency can be calculated as a function of bandgap in the detailed-balance case (the Shockley-Queisser limit), in which all of the thermal emissivity of the cell is due to the recombination of thermally generated electron-hole pairs, and all other recombination losses are ignored. The current produced is directly proportional to the recombination radiation, and thus the more thermally generated pairs, the higher the current. The voltage is proportional to the external bias. These two constraints allow optimization of the optimum bias point for maximum power, and allow calculation of the efficiency at maximum power point. Unlike photovoltaic cells, the maximum power operating point is not the same as the maximum efficiency point, and higher efficiency can be achieved at a higher (negative) bias in the ideal case. Incorporating non-ideal losses, however, shifts the maximum efficiency point toward lower bias. Since a thermoradiative cell operates by radiating directly to space, the current produced by a themoradiative cells will increase with the Stefan-Boltzman radiative efficiency; roughly the fourth power of the temperature. Thus, in contrast to a photovoltaic converter, the power produced is highest at high operating temperatures. Likewise, in contrast to conventional thermal conversion, high radiator temperature increases, rather than decreases the efficiency. Thus, the thermoradiative conversion may fill a mission niche in which small radiator size is required. The basic operation will be summarized, applications to space power discussed, and the requirements for further research outlined.

Photovoltaic Cell↗
NASA NTRS1985

Solar powered hybrid sensor module program

Geo-orbital systems of the near future will require more sophisticated electronic and electromechanical monitoring and control systems than current satellite systems with an emphasis in the design on the electronic density and autonomy of the subsystem components. Results of a project to develop, design, and implement a proof-of-concept sensor system for space applications, with hybrids forming the active subsystem components are described. The design of the solar power hybrid sensor modules is discussed. Module construction and function are described. These modules combined low power CMOS electronics, GaAs solar cells, a crystal oscillatory standard UART data formatting, and a bidirectional optical data link into a single 1.25 x 1.25 x 0.25 inch hybrid package which has no need for electrical input or output. Several modules were built and tested. Applications of such a system for future space missions are also discussed.

Johnson, J. M.↗
NASA NTRS1989

Technical options for high average power free electron milimeter-wave and laser devices

Many of the potential space power beaming applications require the generation of directed energy beams with respectable amounts of average power (MWs). A tutorial summary is provided here on recent advances in the laboratory aimed at producing direct conversion of electrical energy to electromagnetic radiation over a wide spectral regime from microwaves to the ultraviolet.

Swingle, James C.↗
DOE OSTI2024

ARC-SAFE: Accelerated Response semiconducting Contactors and Surge Attenuation For DC Electrical systems (Final Scientific/Technical Report)

The landscape of power transmission and distribution is quickly evolving as more power conversion is done through power electronics and transmitted or distributed at medium voltage direct current (MVDC). As power electronics tend to store less energy and be less resilient to faults than conventional power transformers, a reliable and fast protection against faults is critical to protect power electronics (PE) based infrastructure, especially for medium- and high-voltage applications. This motivates the development of PE based protection circuits to replace slower contemporary electromechanical breakers. In this project a novel PE based MVDC circuit breaker is developed; the new design is comprised of 1) a normally-on leg made of commercially-available, cascaded SiC junction field effect transistors (JFETs) with a passive balancing network, and 2) a normally-off leg based on an optically-triggered gallium nitride (GaN) photoconductive semiconductor switch (PCSS). The normally-off leg was designed to be quickly turned on, to divert current to an auxiliary dissipative circuit, as the normally-on leg is turned off. This approach, using solid-state devices, was selected for a high-performance, fast-switching operation for the DC circuit breaker as compared to approaches that use slower mechanical switches. To be practical, the circuit breaker must have low conduction loss (low Ron) in the normally-on leg and fast coordinated triggering of the normally-off leg to avoid damage from inductive flyback, which could be considerable for long lengths of cable.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Electrical substation grid testbed for DLT applications of electrical fault detection, power quality monitoring, DERs use cases and cyber-events

Electrical utilities continue to deploy more intelligent electronic devices (IEDs) inside and outside electrical substation, and are associated with customer-owned distributed energy resources (DERs). The integrity and confidentiality of data from these IEDs, like power meters and protective relays, is crucial. Blockchain technology could improve the resilience of microgrids by improving the security of data sharing. The penetration of customer-owned DERs (renewable energy sources) and the increasing deployment of IEDs can lead to integrate power system applications with Distributed Ledger Technology (DLT). In this study, we implemented the electrical faulted phase detection and power quality monitoring algorithms with a Cyber Grid Guard (CGG) system using DLT. In addition, the DERs (wind turbine farms) use case and protective relay cyber-event tests were assessed, by using the CGG system with DLT. In the experimental model, the testbed was created by using a real-time simulator and CGG system with power meters/ protective relays in-the-loop. The data collected from the CGG system and IEDs were compared with the same time stamp source. These results had shown the successful assessment of protection, control and monitoring applications using a CGG system with DLT. In the future, the ESGT with DERs and the CGG system will be used in other power system applications, based on implementing smart contracts between electrical utilities with customer-owned DERs.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Collisional Effects on Electron Trajectories in Crossed-Field Devices

Crossed-field diodes (CFDs) are used in multiple high-power applications and are characterized by an applied magnetic field orthogonal to the electric field, induced by the applied voltage across the anode-cathode gap. In vacuum, the Hull cutoff magnetic field (HCMF) represents the maximum applied magnetic field for which an electron from the cathode can reach the anode. This study investigates the effects of non-vacuum conditions on electron trajectories by introducing electron mobility, which represents particle collisions. We used numerical solutions of the electron force law and particle-in-cell simulations (XPDP1) to assess electron motion for various electron mobilities. For magnetic fields above the HCMF in vacuum, reducing the electron mobility increases the time for an electron emitted from the cathode to reach the anode. Reducing mobility below 22 C s/kg eliminates the HCMF for any magnetic field, meaning that an emitted electron will always cross the gap. We derived the magnetic field, mobility, and electron transit time corresponding to this condition by solving for the condition when the electron velocity in the direction across the anode-cathode gap going to zero at the anode. A parametric study of these conditions using theory and XPDP1 is performed under different gap distances, voltages, and magnetic fields.

42 ENGINEERING↗
NASA NTRS2007

The Application of Metal Oxide Nanomaterials for Chemical Sensor Development

NASA Glenn Research Center (GRC) has been developing miniature chemical sensors for a variety of applications including fire detection, emissions monitoring, fuel leak detection, and environmental monitoring. Smart Lick and Stick sensor technology which integrates a sensor array, electronics, telemetry, and power into one microsystem are being developed. These microsystems require low power consumption for long-term aerospace applications. One approach to decreasing power consumption is the use of nanotechnology. Nanocrystalline tin oxide (SnO2) carbon monoxide (CO) sensors developed previously by this group have been successfully used for fire detection and emissions monitoring. This presentation will briefly review the overall NASA GRC chemical sensor program and discuss our further effort in nanotechnology applications. New carbon dioxide (CO2) sensing material using doped nanocrystalline SnO2 will be discussed. Nanocrystalline SnO2 coated solid electrolyte CO2 sensors and SnO2 nanorod and nanofiber hydrogen (H2) sensors operated at reduced or room temperatures will also be discussed.

Xu, Jennifer C.↗
DOE OSTI2021

Distributed Wind Controls: A Research Roadmap for Microgrids, Infrastructure Resilience, and Controls Launchpad (MIRACL)

The Microgrids, Infrastructure Resilience, and Advanced Controls Launchpad (MIRACL) project’s controls research area aims to expand the benefits from distributed wind (DW) generation assets beyond solely providing low cost power directly to consumers. To make distributed wind turbines operate more effectively there is a need for more advanced ways to control them, allowing power companies, businesses, and energy consumers to take advantage of the unique characteristics of wind energy. DW can contribute to the safe and secure operation of grid by providing services such as voltage regulation, frequency regulation, spinning reserves, and even black start capabilities. In the larger DER context where much of the research has focused around solar technologies, the inertia available in wind technologies has generally not been considered. For wind turbines to provide these services in an optimal and expanded way, development and demonstration of control methods and communication interfaces within a grid and microgrid framework are required. In this document, NREL led the literature review in collaboration with SNL, of DER controls-focused integration research to establish a baseline for the controls research under the MIRACL project to identify specific control functions to be focused on throughout this project. This literature review focused primarily on the control functions of variable distributed generation, largely pulling from past solar PV and battery controls works, with a specific focus on applicability for distributed wind energy systems. The goal of this document is to identify a research roadmap based on the open literature and past national laboratory works to inform advanced wind turbine and power electronics control functions for four use cases: 1) distributed wind in isolated systems, 2) grid-connected microgrids (wind-hybrid systems and islanded operation), 3) behind-the-meter distributed wind applications in the power distribution systems, and 4) front-of-the-meter distributed wind applications in the power distribution systems.

17 WIND ENERGY↗
DOE OSTI2025

Constrained nuclear–electronic orbital method for periodic density functional theory: Application to H 2 chemisorption on Si(001) surfaces

The nuclear–electronic orbital (NEO) method provides a powerful computational framework for incorporating nuclear quantum effects (NQE) in electronic structure calculations beyond the Born–Oppenheimer approximation. By incorporating additional constraints to the position operator on quantum particles like protons, the NEO method enables calculation of effective potential that accounts for NQE. Here, in this work, we present a new constrained NEO (cNEO) formulation for density functional theory (cNEO-DFT) calculations in the context of extended periodic systems. Using the nudged elastic band method, we discuss an application of the cNEO-DFT approach to studying the adsorption of a hydrogen molecule on the Si(001) surfaces. The calculation shows how NQE impacts the reaction energetics. The proton density changes are computed along the reaction pathways. This work demonstrates the capability of the new cNEO-DFT method to study a wide range of chemical processes, such as surface reactions where the quantum nature of light atoms like protons is non-negligible.

Chemical processes↗
DOE OSTI2022

High thermal conductivity and ultrahigh thermal boundary conductance of homoepitaxial AlN thin films

Wurtzite aluminum nitride (AlN) has attracted increasing attention for high-power and high-temperature operations due to its high piezoelectricity, ultrawide-bandgap, and large thermal conductivity k. The k of epitaxially grown AlN on foreign substrates has been investigated; however, no thermal studies have been conducted on homoepitaxially grown AlN. In this study, the thickness dependent k and thermal boundary conductance G of homoepitaxial AlN thin films were systematically studied using the optical pump–probe method of frequency-domain thermoreflectance. Our results show that k increases with the thickness and k values are among the highest reported for film thicknesses of 200 nm, 500 nm, and 1 μm, with values of 71.95, 152.04, and 195.71 W/(mK), respectively. Our first-principles calculations show good agreement with our measured data. Remarkably, the G between the epilayer and the substrate reported high values of 328, 477, 1180, and 2590 MW/(m 2 K) for sample thicknesses of 200 nm, 500 nm, 1 μm, and 3 μm, respectively. The high k and ultrahigh G of homoepitaxially grown AlN are very promising for efficient heat dissipation, which helps in device design and has advanced applications in micro-electromechanical systems, ultraviolet photonics, and high-power electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A first look at AS-ROC: a Si-Ge integrated chip readout for fast timing

Abstract Advances in timing detector technology require new specialized readout electronics. Applications demand below 10 ps time of arrival resolution and low power for a low repetition rate. A possible path to achieve O(10 ps) time resolution is an integrated chip using Silicon Germanium (SiGe) technology. Using DoE SBIR funding, Anadyne, Inc., in collaboration with UC Santa Cruz, has developed a prototype SiGe front-end readout chip optimized for low power and timing resolution. Two versions of the chip were produced with performance in simulation: a more power version with 10 ps resolution at 5 fC with 1.1 mW/channel, and a less power version with 10 ps resolution at 8 fC with 0.6 mW/channel.The chip was produced at Tower Semiconductor with 350 nm technology. The ASIC from the prototype run shows good performance: a rise time of 0.7–1 ns and 25 mV per fC response with RMS noise <1 mV. Simulation and results from the prototype will be reported in this paper.

Instruments & Instrumentation↗
DOE OSTI2024

SMART SiC Power ICs: Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (Final Technical Report)

This collaborative project was initiated with the goal of developing Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (SMART SiC Power ICs). In pursuit of this objective, innovative designs and fabrication processes were implemented, enabling the development of large-scale (>1 cm²) SiC Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuits and high-voltage (400–600 V) lateral power MOSFETs (HV-LDMOS) on 150 mm 4H-SiC substrates. The resulting SMART SiC Power ICs are tailored to support a wide range of applications requiring diverse voltage and power levels, including automotive systems, industrial equipment, electronic data processing, energy harvesting, and power conditioning. To achieve the proposed ‘SMART’ technology for SiC ICs, the team focused on 1) the Development of highly scalable CMOS (with high channel mobilities for n-type and p-type MOSFETs), LDMOS (~600V, 10A rated), and IC technologies, 2) Establishment of a manufacturable process baseline in a production-grade-, 150mm, SiC fabrication facility, and 3) Demonstration of SMART SiC ICs. The project initially comprised of fabricating 5 lots. In lot 1 monolithic integration using a single process was achieved. Here, we were able to successfully accomplish Integrated HV NMOSFET with LV CMOS on N-epi/N+ Substrate. The HV NMOS demonstrated a Breakdown Voltage (BV) more than 600V. Circuit demonstration of CMOS was also another achievement from this lot. In lot 2, priority was in place for isolation and integration. Here we addressed the isolation concerns and integrated the HV NMOS and LV CMOS using the N-epi/P-epi/N+ substrate. Similar to the lot 1, we were able to achieve a BV of 600 V for HV NMOS. Optimized gate oxide process with high channel mobilities, better gate oxide reliability, development of SPICE models, successful ohmic process development, novel wafer area saving design layouts, P+ isolation schemes with channeling implantations and high temperature operational circuits demonstrations are some of the key highlights from lot 1 and lot2. In lot 3, discrete device performances of HV NMOS with a BV ~700V and reliable LV CMOS performances were achieved. Also, novel architectural solutions were successfully implemented to suppress the electric field crowding at the gate oxide for reliable operations. In lot 4, half bridge power driver ICs with a conversion efficiency of (target 90% to 95%) in the 1-5MHz switching frequency range for output power between 25 W to 3 kW have been included in. However, due to the unfortunate events of sudden foundry shutdown (SiCamore Semi) the processing of lot 4 wafers came to a complete stop (January 2024). Arrangements have recently been made to shift the fabrication to another foundry, General Electric Aerospace. The fabrication process now on course (as of December 2024). Characterizations are delayed due to this unfortunate circumstance. The proposed trench architectural-based devices and ICs (lot 5) underwent modifications from the original project proposal. This change was necessitated by limitations in the availability of trench-based processes at commercial production-grade fabrication facilities in the US. Apart from above achievements, a Process Development Kit (PDK) was successfully developed for planar type SiC CMOS/LDMOS.

42 ENGINEERING↗
NASA NTRS2006

Multiplexing Transducers Based on Tunnel-Diode Oscillators

Multiplexing and differential transducers based on tunnel-diode oscillators (TDOs) would be developed, according to a proposal, for operation at very low and/or widely varying temperatures in applications that involve requirements to minimize the power and mass of transducer electronic circuitry. It has been known since 1975 that TDOs are useful for making high-resolution (of the order of 10(exp -9)) measurements at low temperatures. Since that time, TDO transducers have been found to offer the following additional advantages, which the present proposal is intended to exploit: TDO transducers can operate at temperatures ranging from 1 K to about 400 K. Most electronic components other than tunnel diodes do not operate over such a wide temperature range. TDO transducers can be made to operate at very low power - typically, <1 mW. Inasmuch as the response of a TDO transducer is a small change in an arbitrarily set oscillation frequency, the outputs of many TDOs operating at sufficiently different set frequencies can be multiplexed through a single wire. Inasmuch as frequencies can be easily subtracted by means of mixing circuitry, one can easily use two TDOs to make differential measurements. Differential measurements are generally more precise and less susceptible to environmental variations than are absolute measurements. TDO transducers are tolerant to ionizing radiation. Ultimately, the response of a TDO transducer is measured by use of a frequency counter. Because frequency counting can be easily implemented by use of clock signals available from most microprocessors, it is not necessary to incorporate additional readout circuitry that would, if included, add to the mass and power consumption of the transducer circuitry. In one example of many potential variations on the basic theme of the proposal, the figure schematically depicts a conceptual differential-pressure transducer containing a symmetrical pair of TDOs. The differential pressure would be exerted on an electrically conductive and grounded diaphragm, which, at zero differential pressure, would nominally be sprung to a middle position between two capacitor plates that would be parts of the two TDOs. The frequencies of the two TDOs would vary in opposite directions as variations in differential pressure bent the diaphragm away from one capacitor plate and toward the other. The outputs of the TDOs would be mixed and lowpass filtered to obtain a signal at the difference between the frequencies of the two TDOs. The difference frequency would be measured by a frequency counter and converted to differential pressure by a computer.

Chui, Talso↗
NASA NTRS1988

Electron-temperature dependence of the recombination of electrons with O4(+) ions

The coefficient for recombination of O4(+) ions with electrons has been measured as a function of Te by analyzing electron- and ion-density decays in microwave-generated afterglow plasmas in neon-oxygen mixtures. Te values in the afterglow were elevated above those of the neutral species and ions by continuous application of microwave power. The data analysis included effects on the Te arising from inelastic collisions of electrons with the minority oxygen molecules and spatial nonuniformities of Te due to the spatially nonuniform microwave heating field. Over the temperature range Te = 143-5500 K the recombination coefficients were found to have a Te exp -z dependence, with z = 0.48 + 0.1 or - 0.05. While the values of the recombination coefficients for this dimer ion are an order of magnitude larger than those of the monomer ions, the temperature dependence is close to the Te exp -0.5 dependence predicted and often observed for diatomic ions.

Dulaney, J. L.↗
DOE OSTI2025

Dielectric Engineering of ZnO@ZIF‐8 for High‐Performance Triboelectric Nanogenerators and Self‐Powered Humidity Sensors

Porous metal oxide–metal-organic framework (MO x @MOF) hybrids offer synergistic effects that enhance surface charge density, electronic structure, and textural properties, making them ideal for self-powered sensing applications. Here, uniform, and pinhole-free ternary porous ZnO–PTFE@ZIF-8 hybrid films are developed on room-temperature co-sputtered ZnO–polytetrafluoroethylene (PTFE) composite films, where ZnO serves as a self-sacrificial precursor to precisely regulate ZIF-8 (Zn-MeIm 2 ) growth through solvothermal methods. The resulting TENG achieves a high output power density of 0.67 mW cm −2 , attributed to the synergistic effects of fluorine-rich PTFE and methyl-functionalized ZIF-8, which enhance surface charge density and dielectric response. By tuning PTFE content in the ZnO–PTFE composite, the dielectric constant and triboelectric output is optimized. The ZP60@ZIF-8-based device also demonstrates excellent humidity sensing performance, with a wide detection range (20–99% RH) and ultrahigh sensitivity (R V % of 19 900%, R I % of 19 325% at 99% RH). These results position ZP@ZIF-8-based TENGs as promising platforms for next-generation self-powered sensors and smart wearable electronics.

42 ENGINEERING↗
DOE OSTI2022

Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments

With their greater voltage breakdowns, higher current limitations, and faster switching speeds, wide bandgap semiconductors are increasing in market application over the traditionally dominant silicon devices. Silicon carbide semiconductors have been increasing the efficiency and reducing the footprint of modern power electronics, and the increased electron mobility of gallium nitride semiconductors have been increasing the switching frequencies of radio frequency circuits. In extreme temperature (>225°C) applications and high radiation environments such as low earth orbit, deep space, and terrestrial nuclear reactors, silicon-based semiconductors degrade rapidly. Wide bandgap semiconductors are poised to disrupt the market for sensing, instrumentation, and communication circuitry in these hazardous environments by increasing the lifetime, safety, and reliability. This report outlines the advantages of using wide bandgap semiconductor materials in extreme temperature and radiation environments.

36 MATERIALS SCIENCE↗