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At least 289 records · Page 16

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NASA NTRS1975

Voltage monitoring system

A description is given of a system for monitoring the voltage at a remote location and determining when the voltage exceeds upper and lower levels. The system includes transmission lines for transmitting the voltage back to a central station and applying such to an amplifier having a pair of outputs. One of the outputs of the amplifier is applied to an oscillograph. The other output is fed through an isolation transformer, a full wave rectifier, to a pair of unijunctional transistor circuits for producing pulses when the voltage exceeds or drops below a predetermined level. These pulses, in turn, energize a relay which turns on the oscillograph for recording the voltages being monitored.

Canicatti, C. L.↗

NASA NTRS1976

Voltage stress effects on microcircuit accelerated life test failure rates

The applicability of Arrhenius and Eyring reaction rate models for describing microcircuit aging characteristics as a function of junction temperature and applied voltage was evaluated. The results of a matrix of accelerated life tests with a single metal oxide semiconductor microcircuit operated at six different combinations of temperature and voltage were used to evaluate the models. A total of 450 devices from two different lots were tested at ambient temperatures between 200 C and 250 C and applied voltages between 5 Vdc and 15 Vdc. A statistical analysis of the surface related failure data resulted in bimodal failure distributions comprising two lognormal distributions; a 'freak' distribution observed early in time, and a 'main' distribution observed later in time. The Arrhenius model was shown to provide a good description of device aging as a function of temperature at a fixed voltage. The Eyring model also appeared to provide a reasonable description of main distribution device aging as a function of temperature and voltage. Circuit diagrams are shown.

Johnson, G. M.↗

NASA NTRS1976

Flux-flow voltages during guided flux collapse from hollow superconducting cylinders

Voltages across diametrically opposite contact pairs on the outer surface of superconducting Nb tubes are found to depend dramatically upon the spatial configuration of the voltage-measuring leads relative to the positions of the moving magnetic flux lines. Experiments have been conducted to study these voltages for different wall thicknesses and for a variety of arrangements of the leads when flux in the hole and the wall of the Nb tube is made to exit or enter, completely or partially, by applying heat at a narrow strip along its length. Using the critical-state concept, a model for the change of flux and the resulting electric fields in the Nb tube on application of a heat pulse is presented. The resulting time-dependent and time-integrated voltages are calculated in excellent quantitative agreement with the experimental results. These results show that the flux-flow voltages across two contact points on a superconductor arise from the generation of an induced electric field over a chosen path in the superconductor between the contact points and from a change of magnetic flux through the surface bounded by the measuring leads and the chosen path in the superconductor.

Khanna, S. M.↗

NASA NTRS1980

Advanced electric propulsion system concept for electric vehicles. Addendum 1: Voltage considerations

The two electric vehicle propulsion systems that best met cost and performance goals were examined to assess the effect of battery pack voltage on system performance and cost. A voltage range of 54 to 540 V was considered for a typical battery pack capacity of 24 k W-hr. The highest battery specific energy (W-hr/kg) and the lowest cost ($/kW-hr) were obtained at the minimum voltage level. The flywheel system traction motor is a dc, mechanically commutated with shunt field control, and due to the flywheel the traction motor and the battery are not subject to extreme peaks of power demand. The basic system uses a permanent-magnet motor with electronic commutation supplied by an ac power control unit. In both systems battery cost were the major factor in system voltage selection, and a battery pack with the minimum voltage of 54 V produced the lowest life-cycle cost. The minimum life-cycle cost for the basic system with lead-acid batteries was $0.057/km and for the flywheel system was $0.037/km.

Raynard, A. E.↗

NASA NTRS1984

Forecasting of high voltage insulation performance: Testing of recommended potting materials and of capacitors

Nondestructive high voltage test techniques (mostly electrical methods) are studied to prevent total or catastrophic breakdown of insulation systems under applied high voltage in space. Emphasis is on the phenomenon of partial breakdown or partial discharge (P.D.) as a symptom of insulation quality, notably partial discharge testing under D.C. applied voltage. Many of the electronic parts and high voltage instruments in space experience D.C. applied stress in service, and application of A.C. voltage to any portion thereof would be prohibited. Suggestions include: investigation of the ramp test method for D.C. partial discharge measurements; testing of actual flight-type insulation specimen; perfect plotting resin samples with controlled defects for test; several types of plotting resins and recommendations of the better ones from the electrical characteristics; thermal and elastic properties are also considered; testing of commercial capaciters; and approximate acceptance/rejection/rerating criteria for sample test elements for space use, based on D.C. partial discharge.

Bever, R. S.↗

NASA NTRS1985

Incrementally Variable High-Voltage Supply

Programable power supply provides regulated output ranging from 2.5 to 2,500 volts. Exponential digital-to-analog converter provides low-voltage analog signal to power converter and to negative and positive high-voltage regulators. In response, converter furnishes voltage of approximate magnitude represented by analog signal, and regulators adjust voltage to precise magnitude. Entire voltage range covered in 169 steps. Total power consumption expected to be less than 2 watts.

Potter, D. W.↗

NASA NTRS1985

Surface interactions and high-voltage current collection

Spacecraft of the future will be larger and have higher power requirements than any flown to date. For several reasons, it is desirable to operate a high power system at high voltage. While the optimal voltages for many future missions are in the range 500 to 5000 volts, the highest voltage yet flown is approximately 100 volts. The NASCAP/LEO code is being developed to embody the phenomenology needed to model the environmental interactions of high voltage spacecraft. Some plasma environment are discussed. The treatment of the surface conductivity associated with emitted electrons and some simulations by NASCAP/LEO of ground based high voltage interaction experiments are described.

Mandell, M. J.↗

NASA NTRS1985

Space test program of high-voltage solar array-space plasma interactions

Future spacecraft, notably the proposed Space Station, will require power systems much larger than have previously been flown. It is recognized that at higher voltages, and at the relatively high plasma density present at low Earth orbital altitudes, undesirable interactions between the high voltage solar array and the space plasma will occur. Space experiments on high voltage solar array space plasma interactions in low Earth orbit are an absolute requirement for confident design of a higher voltage solar array. Experiments are presently being identified to provide the necessary space data for calibration of ground testing, validation of analytical models, and development of design guidelines required for confident design of high voltage solar arrays in space. A proposed flight experiment program which is designed to obtain the required data is summarized.

Carruth, M. R., Jr.↗

NASA NTRS1988

Arcing and discharges in high-voltage subsystems of Space Station

Arcing and other types of electrical discharges are likely to occur in high-voltage subsystems of the Space Station. Results from ground and space experiments on the arcing of solar cell arrays are briefly reviewed, showing that the arcing occurs when the conducting interconnects in the arrays are at negative potential above a threshold, which decreases with the increasing plasma density. Furthermore, above the threshold voltages the arcing rate increases with the plasma density. At the expected operating voltages (approximately 200 V) in the solar array for the space station, arcing is expected to occur even in the ambient ionospheric plasma. If the ionization of the contaminants increases the plasma density near the high-voltage systems, the adverse effects of arcing on the solar arrays and the space station are likely to be enhanced, In addition to arcing other discharge processes are likely to occur in high-voltage subsystems. For example, Paschen discharge is likely to occur when the neutral density N sub n greater that 10 to the 12th cu cm, the corresponding neutral pressure P greater than 3 x 10 to the -5 Torr.

Singh, N.↗

NASA NTRS1989

The effects of ion gun beam voltage on the electrical characteristics of NbCN/PbBi edge junctions

The authors have succeeded in fabricating high-quality submicron NbCN edge junctions using a technique which is commonly used to make Nb edge junctions. A modified commercial ion gun was used to cut an edge in SiO2/NbCN films partially covered with photoresist. An insulating barrier was then formed on the exposed edge by reactive ion beam oxidation, and a counterelectrode of PbBi was deposited. The electrical quality of the resulting junctions was found to be strongly influenced by the ion beam acceleration voltages used to cut the edge and to oxidize it. For low ion beam voltages, the junction quality parameter was as high as Vm = 55 mV (measured at 3 mV), but higher ion beam voltages yielded strikingly poorer quality junctions. In light of the small coherence length of NbN, the dependence of the electrical characteristics on ion beam voltage is presumably due to mechanical damage of the NbCN surface. In contrast, for similar ion beam voltages, no such dependence was found for Nb edge junctions.

Lichtenberger, A. W.↗

NASA NTRS1991

Characterization of vertical electric fields and associated voltages induced on a overhead power line from close artificially initiated lightning

Measurements were characterized of simultaneous vertical electric fields and voltages induced at both ends of a 448 m overhead power line by artificially initiated lightning return strokes. The lightning discharges struck ground about 20 m from one end of the line. The measured line voltages could be grouped into two categories: those in which multiple, similarly shaped, evenly spaced pulses were observed, which are called oscillatory; and those dominated by a principal pulse with subsidiary oscillations of much smaller amplitude, which are called impulsive. Voltage amplitudes range from tens of kilovolts for oscillatory voltages to hundreds of kilovolts for impulsive voltages.

Rubinstein, Marcos↗

NASA NTRS1924

The effect of electrode temperature on the sparking voltage of short spark gaps

This report presents the results of an investigation to determine what effect the temperature of spark plug electrodes might have on the voltage at which a spark occurred. A spark gap was set up so that one electrode could be heated to temperatures up to 700 degrees C., while the other electrode and the air in the gap were maintained at room temperature. The sparking voltages were measured both with direct voltage and with voltage impulse from ignition coil. It was found that the sparking voltage of the gap decreased materially with increase of temperature. This change was more marked when the hot electrode was of negative polarity. The phenomena observed can be explained by the ionic theory of gaseous conduction, and serve to account for certain hitherto unexplained actions in the operation of internal combustion engines. These results indicate that the ignition spark will pass more readily when the spark-plug design is such as to make the electrodes run hot. This possible gain is, however, very closely limited by the danger of producing preignition. These experiments also show that sparking is somewhat easier when the hot electrode (which is almost always the central electrode) is negative than when the polarity is reversed.

Silsbee, F B↗

NASA NTRS1994

Improved Programmable High-Voltage Power Supply

Improved dc-to-dc converter functions as programmable high-voltage power supply with low-power-dissipation voltage regulator on high-voltage side. Design of power supply overcomes deficiencies of older designs. Voltage regulation with low power dissipation provided on high-voltage side.

Castell, Karen↗

NASA NTRS1995

Design and Development of High Voltage Direct Current (DC) Sources for the Solar Array Module Plasma Interaction Experiment

Two programmable, high voltage DC power supplies were developed as part of the flight electronics for the Solar Array Module Plasma Interaction Experiment (SAMPIE). SAMPIE's primary objectives were to study and characterize the high voltage arcing and parasitic current losses of various solar cells and metal samples within the space plasma of low earth orbit (LEO). High voltage arcing can cause large discontinuous changes in spacecraft potential which lead to damage of the power system materials and significant Electromagnetic Interference (EMI). Parasitic currents cause a change in floating potential which lead to reduced power efficiency. These primary SAMPIE objectives were accomplished by applying artificial biases across test samples over a voltage range from -600 VDC to +300 VDC. This paper chronicles the design, final development, and test of the two programmable high voltage sources for SAMPIE. The technical challenges to the design for these power supplies included vacuum, space plasma effects, thermal protection, Shuttle vibrations and accelerations.

Bibyk, Irene K.↗

NASA NTRS1995

High-voltage space-plasma interactions measured on the PASP Plus test arrays

The Photovoltaic Array Space Power Plus Diagnostics (PASP Plus) experiment was developed by the Air Force's Phillips Laboratory with support from NASA's Lewis Research Center. It was launched on the Advanced Photovoltaic and Electronics EXperiments (APEX) satellite on August 3, 1994 into a 70 degree inclination, 363 km by 2550 km elliptical orbit. This orbit allows the investigation of space plasma effects on high-voltage operation (leakage current at positive voltages and arcing at negative voltages) in the perigee region. PASP Plus is testing twelve solar arrays. There are four planar Si arrays: an old standard type (used as a reference), the large-cell Space Station Freedom (SSF) array, a thin 'APSA' array, and an amorphous Si array. Next are three GaAs on Ge planar arrays and three new material planar arrays, including InP and two multijunction types. Finally, there are two concentrator arrays: a reflective-focusing Mini-Cassegrainian and a Fresnel-lens focusing Mini-Dome. PASP Plus's diagnostic sensors include: Langmuir probe to measure plasma density, an electrostatic analyzer (ESA) to measure the 30 eV to 30 KeV electron/ion spectra and determine vehicle negative potential during positive biasing, and a transient pulse monitor (TPM) to characterize the arcs that occur during the negative biasing. Through positive biasing of its test arrays, PASP Plus investigated the snapover phenomenon, which took place over the range of +100 to +300 V. It was found that array configurations where the interconnects are shielded from the space plasma (i.e., the concentrators or arrays with 'wrap-through' connectors) have lower leakage current. The concentrators exhibited negligible leakage current over the whole range up to +500 V. In the case of two similar GaAs on Ge arrays, the one with 'wrap-through' connectors had lower leakage current than the one with conventional interconnects. Through negative biasing, PASP Plus investigated the arcing rates of its test arrays. The standard Si array, with its old construction (exposed rough-surface interconnects), arced significantly over a wide voltage and plasma-density range. The other arrays arced at very low rates, mostly at voltages greater than -350 V and plasma densities near or greater than 10(exp 5)/cm(exp -3). AS expected according to theory, arcing was more prevalent when array temperatures were cold (based on biasing in eclipse).

Guidice, Donald A.↗

NASA NTRS1997

Investigation of an Aberrant Cell Voltage During the Filling of a Large Lithium Thionyl Chloride Cell

The investigation of an aberrant cell voltage during the filling of a large lithium thionyl chloride cell summary is at: an aberrant voltage trace was noted during the review of cell filling data; incident was traced to an interruption during filling; experimentation suggested oxidizable sites within the carbon electrode were responsible for the drop in voltage; the voltage anomaly could be reproduced by interrupting the filling of similar cells; and anomalous voltage dip was not due to a short.

Thaller, Lawrence H.↗

NASA NTRS1999

Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0.1-(micron)meter MOSFET's with Epitaxial and (delta)-Doped Channels

A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub-0.1-(micron)meter MOSFET architectures with epitaxial channels and delta doping is presented. The need for enhancing the fluctuation resistance of the sub-0.1-(micron)meter generation transistors is highlighted by presenting summarized results from atomistic simulations of a wide range of conventional devices with uniformly doped channel. According to our atomistic results, the doping concentration dependence of the random dopant-induced threshold voltage fluctuations in conventional devices is stronger than the analytically predicted fourth-root dependence. As a result of this, the scaling of such devices will be restricted by the "intrinsic" random dopant-induced fluctuations earlier than anticipated. Our atomistic simulations confirm that the introduction of a thin epitaxial layer in the MOSFET's channel can efficiently suppress the random dopant-induced threshold voltage fluctuations in sub-0.1-(micron)meter devices. For the first time, we observe an "anomalous" reduction in the threshold voltage fluctuations with an increase in the doping concentration behind the epitaxial channel, which we attribute to screening effects. Also, for the first time we study the effect of a delta-doping, positioned behind the epitaxial layer, on the intrinsic threshold voltage fluctuations. Above a certain thickness of epitaxial layer, we observe a pronounced anomalous decrease in the threshold voltage fluctuation with the increase of the delta doping. This phenomenon, which is also associated with screening, enhances the importance of the delta doping in the design of properly scaled fluctuation-resistant sub-0.1-(micron)meter MOSFET's. Index Terms-Doping, fluctuations, MOSFET, semiconductor device simulation, silicon devices, threshold.

Asenov, Asen↗

NASA NTRS2000

Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate Oxide

In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) "atomistic" simulation technique described else-where. MOSFET's with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveal that even in devices with a single crystal gate the gate depletion and the random dopants in it are responsible for a substantial fraction of the threshold voltage fluctuations when the gate oxide is scaled-in the range of 1-2 nm. Simulation experiments have been used in order to separate the enhancement in the threshold voltage fluctuations due to an effective increase in the oxide thickness associated with the gate depletion from the direct influence of the random dopants in the gate depletion layer. The results of the experiments show that the both factors contribute to the enhancement of the threshold voltage fluctuations, but the effective increase in the oxide-thickness has a dominant effect in the investigated range of devices. Simulations illustrating the effect or the polysilicon grain boundaries on the threshold voltage variation are also presented.

Asenov, Asen↗