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At least 289 records · Page 16

Measurements of WH and ZH production in the $$H \rightarrow b\bar{b}$$ decay channel in pp collisions at $$13\,\text {Te}\text {V}$$ with the ATLAS detector

Measurements of the Standard Model Higgs boson decaying into a $$b\bar{b}$$ b b ¯ pair and produced in association with a W or Z boson decaying into leptons, using proton–proton collision data collected between 2015 and 2018 by the ATLAS detector, are presented. The measurements use collisions produced by the Large Hadron Collider at a centre-of-mass energy of $$\sqrt{s} = 13\,\text {Te}\text {V}$$ s = 13 Te , corresponding to an integrated luminosity of $$139\,\mathrm {fb}^{-1}$$ 139 fb - 1 . The production of a Higgs boson in association with a W or Z boson is established with observed (expected) significances of 4.0 (4.1) and 5.3 (5.1) standard deviations, respectively. Cross-sections of associated production of a Higgs boson decaying into bottom quark pairs with an electroweak gauge boson, W or Z , decaying into leptons are measured as a function of the gauge boson transverse momentum in kinematic fiducial volumes. The cross-section measurements are all consistent with the Standard Model expectations, and the total uncertainties vary from 30% in the high gauge boson transverse momentum regions to 85% in the low regions. Limits are subsequently set on the parameters of an effective Lagrangian sensitive to modifications of the WH and ZH processes as well as the Higgs boson decay into $$b\bar{b}$$ b b ¯ .

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Search for leptoquark pair production decaying into $te^- \bar{t}e^+$ or $t\mu ^- \bar{t}\mu ^+$ in multi-lepton final states in pp collisions at $\sqrt{s} = 13\,\textrm{TeV}$ with the ATLAS detector

A search for leptoquark pair production decaying into $te^- \bar{t}e^+$ or $t\mu ^- \bar{t}\mu ^+$ in final states with multiple leptons is presented. The search is based on a dataset of pp collisions at $\sqrt{s}=13~\text {TeV}$ recorded with the ATLAS detector during Run 2 of the Large Hadron Collider, corresponding to an integrated luminosity of 139 fb -1 . Four signal regions, with the requirement of at least three light leptons (electron or muon) and at least two jets out of which at least one jet is identified as coming from a b-hadron, are considered based on the number of leptons of a given flavour. The main background processes are estimated using dedicated control regions in a simultaneous fit with the signal regions to data. No excess above the Standard Model background prediction is observed and 95% confidence level limits on the production cross section times branching ratio are derived as a function of the leptoquark mass. Under the assumption of exclusive decays into $te^{-}$ ($t\mu ^{-}$ ), the corresponding lower limit on the scalar mixed-generation leptoquark mass $m_{\textrm{LQ}_{\textrm{mix}}^{\textrm{d}}}$ is at 1.58 (1.59) TeV and on the vector leptoquark mass $m_{{\tilde{U}}_1}$ at 1.67 (1.67) TeV in the minimal coupling scenario and at 1.95 (1.95) TeV in the Yang–Mills scenario.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Measurement of multijet azimuthal correlations and determination of the strong coupling in proton-proton collisions at $\sqrt{s}=13\,\text {Te}\hspace{-.08em}\text {V} $

A measurement is presented of a ratio observable that provides a measure of the azimuthal correlations among jets with large transverse momentum $p_{\textrm{T}}$. This observable is measured in multijet events over the range of $p_{\textrm{T}} = 360$–$3170\,\text {Ge}\hspace{-.08em}\text {V} $ based on data collected by the CMS experiment in proton-proton collisions at a centre-of-mass energy of 13$\,\text {Te}\hspace{-.08em}\text {V}$, corresponding to an integrated luminosity of 134$\,\text {fb}^{-1}$. The results are compared with predictions from Monte Carlo parton-shower event generator simulations, as well as with fixed-order perturbative quantum chromodynamics (pQCD) predictions at next-to-leading-order (NLO) accuracy obtained with different parton distribution functions (PDFs) and corrected for nonperturbative and electroweak effects. Data and theory agree within uncertainties. From the comparison of the measured observable with the pQCD prediction obtained with the NNPDF3.1 NLO PDFs, the strong coupling at the Z boson mass scale is $\alpha _\textrm{S} (m_{{\textrm{Z}}}) =0.1177 \pm 0.0013\, \text {(exp)} _{-0.0073}^{+0.0116} \,\text {(theo)} = 0.1177_{-0.0074}^{+0.0117}$, where the total uncertainty is dominated by the scale dependence of the fixed-order predictions. A test of the running of $\alpha _\textrm{S}$ in the $\,\text {Te}\hspace{-.08em}\text {V}$ region shows no deviation from the expected NLO pQCD behaviour.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Thermodynamic Modeling of Intrinsic Defects in MnBi₂Te₄

This repository contains the computational data supporting the manuscript titled “The critical role of intrinsic defects and many-body interactions on the stability of MnBi₂Te₄.” It includes: 1. DFT data generated using VASP, used for training and benchmarking electronic structure models. 2. Quantum Monte Carlo (QMC) data produced with QMCPACK, used to apply many-body corrections and validate the electronic and magnetic properties of MnBi₂Te₄. 3. Relevant scripts used to run, analyze, and process the calculations, enabling reproducibility and transparency of the workflows.

36 MATERIALS SCIENCE↗

ATONA TE-TIMS of minor uranium isotopes (FY25 Mid-Year Report)

Isotopic measurements of the minor isotopes of uranium ( 233 U, 234 U, 236 U) are indispensable measures for material accountability and processing history but can be particularly challenging to accurately measure due to the very low abundance of the minor isotopes relative to 238 U, or 235 U in the case of highly enriched uranium (HEU). The goal of this project is to quantify detection limits for minor uranium isotope species at environmental levels (e.g 236 U/ 238 U < 10 -7 ) utilizing an ATONA-outfitted instrument and the Total Evaporation Thermal Ionization Mass Spectrometry (TE-TIMS) method. In the first half of Fiscal Year 2025, we set out to identify a suitable experimental material (Task 1) and to optimize our TE-TIMS measurement routine (Task 2). We have successfully identified a material and are in the process of getting an aliquot shipped to LANL. Simultaneously, we began working on our measurement routine utilizing CRM 112A. The results of each task are discussed in detail below.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Data Associated with "Identifying Suitable Front Contacts for High-Efficiency Cd(Se,Te) Solar Cells on Space-Qualified Cover Glass"

This is data associated with the publication " Identifying Suitable Front Contacts for High-Efficiency Cd(Se,Te) Solar Cells on Space-Qualified Cover Glass " by Aesha P. Patel, Ryan Muzzio, Matthew R. Young, Robert Morrissey, Suresh Chaulagain, B. Edward Sartor, Prabodika N. Kaluarachchi, Christian Velez, Joshua A. Brown, Joel N. Duenow, Stephen Glynn, Michael J. Heben, Zhaoning Song, Nikolas J. Podraza, Adam B. Phillips, Randy J. Ellingson, Matthew O. Reese. All data associated with each figure in the manuscript and supplementary should be available in this dataset. A readme file is also included to provide some guidance. Abstract: Deployment of photovoltaics in space requires devices that combine high-efficiency, low areal mass, and resilience to harsh environments. Historically, high-efficiency multijunction III–V materials have dominated space power systems; however, their high cost and limited manufacturing throughput motivate the exploration of scalable alternatives. While CdTe-based thin-film photovoltaics offer an attractive option, their performance on non-conventional substrates can suffer from front-contact instability under higher-temperature processing. Here, the role of front-contact chemistry in limiting cell performance is investigated using CdTe-based devices fabricated on 150 μm thick Ceria-doped space-qualified 0214 Corning glass. A matrix of four transparent conducting oxides (TCOs: CTO, AZO, ITO, IZO) combined with two n-type emitters (MZO, IGO) reveals chemical stability at the front interface—rather than absorber composition alone—governs recombination losses, voltage deficits, and device reproducibility. Chemically stable front-contact combinations suppress elemental diffusion and interfacial degradation, resulting in significantly improved carrier lifetimes and junction quality. These insights are validated through record-certified Cd(Se,Te) cell efficiencies of 18.4% under AM1.5G and 16.2% under AM0 illumination on ultra-thin glass. Beyond CdTe, this work provides a general framework for the rational selection of TCO/emitter interfaces in superstrate thin-film photovoltaics, including emerging technologies like metal halide perovskites, while enabling high-efficiency, lightweight photovoltaics for space applications.

14 SOLAR ENERGY↗

Defect chemistry and characterization of (Hg, Cd)Te

Single crystal samples of phosphorus doped Hg sub 0.8 Cd sub 0.2 Te were anneald at temperatures varying from 450 C to 600 C in various Hg atmospheres. The samples were quenched to room temperature from the annealing temperatures. Hall effect and mobility measurements were performed at 77 K on all these samples. The results indicate the crystals to be p type for a total phosphorus concentration of 10 to the 19th power/cu cm in all the samples. The hole concentration at 77 K increases with increasing Hg pressures at 450 C and 500 C contrary to the observation in undoped crystals. Also, at low Hg pressures the concentration of holes in the phosphorus doped crystals is lower than in the undoped crystals. The hole concentration in all the samples is lower than the intrinsic carrier concentration at the annealing temperatures. The hole mobility in the doped crystals is similar to that in the undoped crystals. A defect model according to which phosphorus behaves as a single acceptor interstitially, occupying Te lattice sites while it acts as a single donor occupying Hg lattice sites was established. Equilibrum constants established for the incorporation of all the phosphorus species explain the experimental results

Vydyanath, H. R.↗

Defect chemistry and characterization of Hg sub 1x Cd sub x Te

Single crystal samples of undoped and doped Hg sub 1-x Cd sub x Te were annealed at varying temperatures and partial pressures of Hg. Hall effect and mobility measurements were carried out on these samples after quenching to room temperature. Based on the variation of the carrier concentration and the carrier mobility as a function of the partial pressure of Hg temperature, and dopant concentration, defect models were established for the doped and the undoped crystals. These models indicate that the native acceptor defects in both Hg0.8Cd0.2Te and Hg0.6Cd0.4Te doubly ionized and the native donor defects are negligible in concentration, implying that p to n conversion in these alloys occurs due only to residual donors. Incorporation mechanism of copper, indium, iodine, and phosphorus were investigated. A large concentration of indium is found to be paired with the native acceptor defects. Results on crystals doped with phosphorus indicate that phosphorus behaves amphoterically, acting as a donor on Hg lattice sites and as an acceptor intersitially on Te lattice sites. A majority of the phosphorus is found to be present as neutral species formed from the pairing reaction between phosphorus on Hg lattice sites and phosphorus in interstitial sites. Equilibrium constants for the intrinsic excitation reaction, as well as for the incorporation of the different dopants and the native acceptor defects were established.

Vydyanath, H. R.↗

Density of liquid Hg(1-x)Cd(x)Te

Negative thermal expansion has been established in liquid Hg(1-x)Cd(x)Te for x less than 0.2 employing a pycnometric method. Pure HgTe increases in density from its melting point at 670 C to a maximum value at 750 C, where normal thermal expansion progressively resumes. The dependence of density on temperature for liquid Hg(1-x)Cd(x)Te arises almost exclusively from the HgTe portion of the melt, while CdTe acts as a diluent. The temperature corresponding to the maximum density changes slightly with composition, increasing by about 5 C for x = 0.1.

Chandra, D.↗

Liquidus temperatures of Hg-rich Hg-Cd-Te alloys

Measurements are made of the liquidus temperatures for ten (Hg/1-x/Cd)Te/1-y/ compositions in which x ranges from 0.091 to 0.401 and y ranges from 0.544 to 0.952. It is found that for metal-rich melts with the same x value, the liquidus temperature increases with y when y is in the range 0.5-0.7. This behavior is explained by the higher degree of association between Cd and Te than between Hg and Te in the melts. It is noted that recent calculated values of the liquidus isotherms by Tung et al. (1982) are in fair to good agreement with the experimental results obtained here.

Szofran, F. R.↗

Theory of high-harmonic rectangular gyrotron for TE(mn) modes

In this paper, the linearized relativistic Vlasov equation is solved and a dispersion relation is calculated for the interaction between a relativistic electron beam and the electromagnetic fields of a rectangular waveguide supporting TE(mn) modes. The dispersion relation is simplified to the special case of a frame of reference moving with the electrons and the resulting coupling coefficient epsilon(mn)super l is calculated for various TE(mn) modes. The dependence of epsilon(mn)super l on the parity of the harmonic number l and various mn modes of the waveguide are discussed.

Ferendeci, A. M.↗

Development of ion-implantation confined, shallow mesa stripe (Pn,Sn)Te/Pb(Te,Se) DH laser diodes

Preliminary results of a program to develop ion implantation confined, shallow mesa stripe (Pb,Sn)Te laser diodes are presented. The practicality of using a shallow mesa stripe to produce single mode laser output and to increase the single mode tuning range are demonstrated. The first results of p-type ion implantation in the lead-tin salts are also reported. It is shown that sodium and lithium both can be used to convert n-type Pb(Te,Se) to p-type. The implant and anneal procedures are described, and electrical characteristics of Li-implanted layers are presented.

Fonstad, C. G.↗

Solar cycle effects upon the relationship of Ne and Te in the F-region

Data from the Atmospheric Explorer-C recorded during the rise in solar activity from 1975 to 1978, and Dynamic Explorer-2 data recorded at solar maximum are used to examine how the relation between electron temperature and density in the F-region of the ionosphere is altered by solar activity. It is found that the solar maximum temperature Te is a factor of two larger than the solar minimum Te for the same values of electron density. Temperature does not necessarily increase in response to solar activity because electron density increases enough to approximately cancel the effect of higher solar extreme ultraviolet heating. The effect of solar activity is accounted for by a simple function of the F (10.7 cm) index which multiplies the solar minimum equation from a previous study (Brace and Theis, 1978).

Brace, L. H.↗

Investigation of temperature and concentration oscillations in the directional solidification of Pb-Sn-Te

Directional solidification of the pseudobinary compound semiconductor material Pb sub 1-x Sn sub x Te by the Bridgman crystal growth process will be studied. Natural convection in the molten sample will be visualized with a novel electrochemical cell technique that employs the solid electrolyte material yttria-stabilized zirconia. Mass transfer by both diffusion and convection will be measured by detecting the motion of oxygen tracer in the liquid. Additional applications for electrochemical cells in semiconductor crystal growth are suggested. Unsteady convection in the melt will also be detected by the appearance of temperature oscillations. The purpose of this study is to experimentally characterize the overstable conditions for a Pb sub 1-x Sn sub x Te melt in the vertical Bridgman crystal growth technique and use a linear analysis to predict the onset of convection for this system.

Anderson, T. J.↗

The heat of formation of Mercury vacancies in Hg(0.8)Cd(0.2)Te

A modified mass loss measurement technique has been employed for the first time for the direct in situ determination of vacancy concentrations in Hg(0.8)Cd(0.2)Te at elevated temperatures. This technique can also be used to establish the pressure-temperature phase diagram for this type of system. The derived mean value for the heat of formation of mercury vacancies in the above alloy is 0.43 eV. Theoretical considerations concerning the vacancy formation in HgTe and in Hg(0.8)Cd(0.2)Te are in qualitative agreement with the experimental value.

Wiedemeier, H.↗

Global models of Ne and Te at solar maximum based on DE-2 measurements

Newly developed global models of the electron density of (Ne) and (Te) in the F-region at solar maximum, based on Langmuir probe measurements from the Dynamics Explorer-2 satellite, are compared with solar minimum models that were developed earlier from Atmosphere Explorer data. Spherical harmonics are used in both models to describe the variations with geomagnetic latitude and local time, but the solar maximum model also includes longitudinal variations. The solar minimum models were for the fixed altitudes of 300 km and 400 km, while the solar maximum model covers all altitudes between 300 and 1000 km. In this paper, the global patterns of Ne and Te at 400 km at solar maximum and minimum are compared with the IRI model for the corresponding parts of the solar cycle. In most respects, the IRI model describes the empirical models quite well at both solar maximum and solar minimum.

Brace, L. H.↗

Interface shapes during vertical Bridgman growth of (Pb, Sn)Te crystals

Melt-solid interfaces obtained during vertical Bridgman growth of (Pb, Sn)Te crystals were investigated with a quenching technique. The shapes of these interfaces, revealed by etching longitudinally cut sections, were correlated with the composition variations determined by EMPA. These experiments demonstrated that the interface shape can be changed from concave to convex by moving its location from the edge of the cold zone into the hot zone. The metallography and microsegregation near the melt-solid interface were analyzed in detail. A sharp change in composition above the interface indicated the existence of a diffusion boundary layer 40-90 microns thick. This small diffusion boundary layer is consistent with strong convective mixing in the (Pb, Sn)Te melt.

Huang, YU↗

Charge-carrier mobilities in Cd(0.8)Zn(0.2)Te single crystals used as nuclear radiation detectors

Charge-carrier mobilities were measured for the first time in Cd(0.8)Zn(0.2)Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (532 nm). The electron mobility displayed a T exp -1.1 dependence on the absolute temperature T in the range 200-320 K, with a room-temperature mobility of 1350 sq cm/V s. The hole mobility displayed a T exp -2.0 dependence in the same temperature range, with a room-temperature mobility of 120 sq cm/V s. Cd(0.8)Zn(0.2)Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.

Burshtein, Z.↗