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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Proximity enhanced magnetism at NiFe 2 O 4 /Graphene interface

Here, we explore the change in effective magnetic anisotropy of the ferrimagnetic (FM) insulator nickel ferrite (NFO) thin film due to the inclusion of monolayer graphene (MLG) grown on top of the NFO layer. This was done by performing radio frequency (RF) transverse susceptibility (TS) measurements on bare NFO and NFO/MLG bilayer samples for both in-plane (IP) and out-of-plane (OOP) configurations utilizing a tunnel diode oscillator technique. Our magnetometry measurements indicated an enhancement in the overall saturation magnetization of the NFO/MLG bilayer with respect to the bare NFO film. The TS measurements reveal that the inclusion of MLG reduces the effective magnetic anisotropy for both IP and OOP configurations drastically, by up to a factor of 2 over the temperature range 40 K ≤ T ≤ 280 K. Since NFO is a magnetic substrate, it is possible that NFO could induce magnetic ordering in MLG at the NFO/MLG interface via the magnetic proximity effect. Furthermore, since NFO is insulating and MLG is a semimetal, there likely exists a large conductivity difference at the interface, making charge transfer plausible. These two effects could modify the interfacial magnetism leading to a change in the effective magnetic anisotropy. These results highlight the importance of understanding the interfacial magnetism of FM/MLG heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A Review of Scalable Hexagonal Boron Nitride ( h -BN) Synthesis for Present and Future Applications

Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, in this work, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.

2D materials↗
DOE OSTI2020

Record thermopower found in an IrMn-based spintronic stack

The Seebeck effect converts thermal gradients into electricity. As an approach to power technologies in the current Internet-of-Things era, on-chip energy harvesting is highly attractive, and to be effective, demands thin film materials with large Seebeck coefficients. In spintronics, the antiferromagnetic metal IrMn has been used as the pinning layer in magnetic tunnel junctions that form building blocks for magnetic random access memories and magnetic sensors. Spin pumping experiments revealed that IrMn Néel temperature is thickness-dependent and approaches room temperature when the layer is thin. Here, we report that the Seebeck coefficient is maximum at the Néel temperature of IrMn of 0.6 to 4.0 nm in thickness in IrMn-based half magnetic tunnel junctions. We obtain a record Seebeck coefficient 390 (±10) μV K -1 at room temperature. Our results demonstrate that IrMn-based magnetic devices could harvest the heat dissipation for magnetic sensors, thus contributing to the Power-of-Things paradigm.

42 ENGINEERING↗
DOE OSTI2021

Can we safely go to 200 °C? An integrated approach to assessing impacts to the engineered barrier system in a high-temperature repository

Abstract. This presentation gives on overview of the complex thermo-hydro-mechanical-chemical (THMC) processes occurring during the disposal of heat-producing high-level radioactive waste in geologic repositories. A specific focus is on the role of compacted bentonite, which is commonly used as an engineered backfill material for emplacement tunnels because of its low permeability, high swelling pressure, and radionuclide retention capacity. Laboratory and field tests integrated with THMC modeling have provided an effective way to deepen our understanding of temperature-related perturbations in the engineered barrier system; however, most of this work has been conducted for maximum temperatures around 100 ∘C. In contrast, some international disposal programs have recently started investigations to understand whether local temperatures in the bentonite of up to 200 ∘C could be tolerated with no significant changes to safety relevant properties. Raising the maximum temperature is attractive for economical and safety reasons but faces the challenge of exposing the bentonite to significant temperature increases. Strong thermal gradients may induce complex moisture transport processes while geochemical processes, such as cementation and perhaps also illitization effects may occur, all of which could strongly affect the bentonite and near-field rock properties. Here, we present initial investigations of repository behavior exposed to strongly elevated temperatures. We will start discussing our current knowledge base for temperature effects in repositories exposed to a maximum temperature of 100 ∘C, based on data and related modeling analysis from a large heater experiment conducted for over 18 years in the Grimsel Test Site in Switzerland. We then show results from coupled THMC simulations of a nuclear waste repository in a clay formation exposed to a maximum temperature of 200 ∘C. We also explore preliminary data from a bench-scale laboratory mock-up experiment, which was designed to represent the strong THMC gradients occurring in a “hot” repository, and we finally touch on a full-scale field heater test to be conducted soon in the Grimsel Test Site underground research laboratory in Switzerland (referred to as HotBENT).

Birkholzer, Jens T. (ORCID:0000000279891912)↗
DOE OSTI2025

Measurement of Contact Resistivity In Symmetric Polycrystalline Si/SiO x /Monocrystalline Si Test Structures Using Variable Light Illumination

While different methods exist to determine the contact resistivity in semiconductor devices, these methods are limited to measurement of the majority carrier contacts. The measurement of p‐ or n‐type contacts on n‐ or p‐type crystalline silicon, respectively, is challenging due to the blocking diode formed by the p–n junction. In this article, we address this problem for tunneling oxide passivating contacts used in high‐efficiency Si solar cells. We propose a universal method to extract contact resistivity on symmetric test structures with polycrystalline silicon on SiO x (poly‐Si/SiO x ) passivating contacts under illumination, both for p–n and high–low‐junction passivated contacts. In this method, we demonstrate that the total contact resistance of each cell grid finger to the base wafer is governed by its effective contact area, defined by the transfer length extending from both sides of the finger. Therefore, the grid contact resistance of a poly‐Si contact depends on the ratio of the doped poly‐Si sheet resistance to the tunneling contact resistivity.

14 SOLAR ENERGY↗
DOE OSTI2023

Space-Time Quantum Information from the Entangled States of Magnetic Molecule (STI Product)

This collaborative project combines synthesis, measurement, and theory by three faculty members at the Eddleman Quantum Institute of UC Irvine to effectively investigate the quantum properties of molecules in the space, time, and frequency domains. Through synthetic chemistry, molecules are tailored for their magnetic and coherent properties. By combining femtosecond (fs) terahertz (THz) light and a continuous wave (cw) THz laser with a low temperature scanning tunneling microscope (STM), quantum phenomena are probed with simultaneous femtosecond temporal and atomic-scale spatial resolution. In particular, the invention of the quantum superposition microscope (QSM) advances quantum sensing for enhanced spectroscopy and imaging capabilities. Coupling theory to the experimental efforts offers a deeper understanding and predictive power for the molecular systems. The phenomena of superposition, entanglement, and coherence is central to quantum information science and can be realized in qubit states. Many systems can be modeled by a double-well potential in which two levels are formed in the two lowest energy states interacting with the environment and external radiation. In focusing on molecules as two-level systems, the underlying expectation is that their tunable composition and structure allows an effective parameter space to optimize their use as qubits for quantum sensing and computing. The THz radiation induces the superposition between the two states, appearing as temporal oscillations that damp in amplitude. Enhanced spectroscopy and imaging in the time and frequency domains is achieved through the extreme sensitivity of the frequency and damping of coherence of two-level systems to its environment. A single hydrogen molecule trapped in the STM tunneling gap experiences a double-well potential and absorption of THz femtosecond pulses of light creates the superposition of its two levels, appearing as damped oscillations in the light induced direct current (DC). The oscillation frequency depends sensitively on the electric field distribution of the copper nitride (Cu 2 N) surface, through the Stark effect, and associated with the different charge distributions at the copper and nitrogen sites and in between. This QSM can resolve variation in the surface electric field with 0.02 nanometer resolution. In addition, the single hydrogen molecule entaes with nearby hydrogen molecules as seen in the avoided level crossings of energy (oscillation frequency) versus the voltage across the tunneling gap. Thus, the first application of the QSM senses and images the surface electric field at the atomic scale. Results from this project advance fundamental understanding of quantum phenomena, develop novel synthesis, measurement, and theory, provide the knowledge foundation for molecule-based qubits and sensing that enable the development of the QSM and emergent technologies. This project trained researchers in quantum information science, extended knowledge in classrooms, and outreached to the community.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field–Induced Ferroelectric Hafnium Zirconium Oxide Thin Films

Non-volatile memory device structures such as ferroelectric random-access memory and ferroelectric tunnel junctions employ switchable spontaneous polarization to hold binary states. These devices can potentially benefit from the imposition of spontaneous internal biases and their resulting effect on the polarization properties of the ferroelectric (or field-induced ferroelectric/ antiferroelectric) layer. While HfO 2 -based thin films are ideal candidates for implementation into these devices due to their scalability and silicon compatibility, the phase purity of these oxides is sensitive to the selection of electrode material, preventing incorporation of asymmetric electrode layers into such structures. Within this work, electrode replacement following post-metallization anneal processing is introduced as a route to achieve ferroelectric and field-induced ferroelectric Hf x Zr 1–x O 2 (HZO) thin films with electrode-independent phase constitutions. The effects of this process and the corresponding internal biases imposed across the HZO layers due to asymmetric work functions are investigated. It is shown that internal biases vary in magnitude in accordance with prediction based on the work functions of the replaced electrode layers and affect remanent polarization magnitudes. Accordingly, electrode replacement presents a processing route that can readily produce HZO films with spontaneous internal biases and electrode- independent phase constitutions, facilitating implementation of these ferroelectrics into the next generation device structures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Vapor transport growth of MnBi 2 Te 4 and related compounds

Motivated by fine tuning of the magnetic and topological properties of MnBi 2 Te 4 via defect engineering, in this work, we report the crystal growth of MnBi 2 Te 4 and related compounds using vapor transport method and crystal characterization by measuring elemental ratio, magnetic and transport properties, and scanning tunneling microscopy. For the growth of MnBi 2 Te 4 single crystals, I 2 , MnI 2 , MnCl 2 , TeCl 4 , and MoCl 5 are all effective transport agents; chemical transportation occurs faster in the presence of iodides than chlorides. We further successfully grow MnSb 2 Te 4 , MnBi 2-x Sb x Te 4 , and Sb-doped MnBi 4 Te 7 crystals. A small temperature gradient< 20°C between the hot and cold ends of the growth ampoule is critical for the successful crystal growth of MnBi 2 Te 4 and related compounds. Compared to flux grown crystals, vapor transported crystals tend to be Mn stoichiometric, and Sb-bearing compositions have more Mn/Sb site mixing. The vapor transport growth provides a new materials synthesis approach to fine tune the magnetic and topological properties of these intrinsic magnetic topological insulators where controlling defects is vital.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High-resolution CH stretch spectroscopy of jet-cooled cyclopentyl radical: First insights into equilibrium structure, out-of-plane puckering, and IVR dynamics

First, high-resolution sub-Doppler infrared spectroscopic results for cyclopentyl radical (C 5 H 9 ) are reported on the α-CH stretch fundamental with suppression of spectral congestion achieved by adiabatic cooling to T rot ≈ 19(4) K in a slit jet expansion. Surprisingly, cyclopentyl radical exhibits a rotationally assignable infrared spectrum, despite 3N – 6 = 36 vibrational modes and an upper vibrational state density (ρ ≈ 40–90 #/cm –1 ) in the critical regime (ρ ≈ 100 #/cm –1 ) necessary for onset of intramolecular vibrational relaxation (IVR) dynamics. Such high-resolution data for cyclopentyl radical permit detailed fits to a rigid-rotor asymmetric top Hamiltonian, initial structural information for ground and vibrationally excited states, and opportunities for detailed comparison with theoretical predictions. Specifically, high level ab initio calculations at the coupled-cluster singles, doubles, and perturbative triples (CCSD(T))/ANO0, 1 level are used to calculate an out-of-plane bending potential, which reveals a C 2 symmetry double minimum 1D energy surface over a C 2v transition state. Here, the inversion barrier [V barrier ≈ 3.7(1) kcal/mol] is much larger than the effective moment of inertia for out-of-plane bending, resulting in localization of the cyclopentyl wavefunction near its C 2 symmetry equilibrium geometry and tunneling splittings for the ground state too small (<1 MHz) to be resolved under sub-Doppler slit jet conditions. The persistence of fully resolved high-resolution infrared spectroscopy for such large cyclic polyatomic radicals at high vibrational state densities suggests a “deceleration” of IVR for a cycloalkane ring topology, much as low frequency torsion/methyl rotation degrees of freedom have demonstrated a corresponding “acceleration” of IVR processes in linear hydrocarbons.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Nucleon–nucleon correlations in the extreme oxygen isotopes

There has been an upsurge of interest in two-nucleon decays thanks to the studies of nucleon–nucleon correlations. In our previous work (2021 Phys. Rev. Lett. 126 142501), based on a novel time-dependent three-body approach, we demonstrated that the energy and angular correlations of the emitted nucleons can shed light on the structure of nucleonic pairs formed inside the nucleus. In this work, we apply the new framework to study the decay dynamics and properties of some extreme proton-rich and neutron-rich oxygen isotopes, including two-proton (2p) decays of 11,12 O and two-neutron (2n) decay of 26 O. Here we show that the low- ℓ components of 11,12 O wave functions, which are affected by continuum and configuration-interaction effects, strongly impact decay dynamics and asymptotic correlations. In the calculated wave functions of 11,12 O, diproton and cigarlike structures merge together during the tunneling process and the resulting energy and angular correlations are very consistent with the experimental data. The asymptotic correlations of the 2n decay of 26 O dramatically change as the 2n decay energy approaches the zero-energy threshold. The small reported value of Q 2n suggests that the 2n decay of this nucleus can be understood in terms of the universal phase-space limit.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

Andreev Reflection and Klein Tunneling in High-Temperature Superconductor-Graphene Junctions

Scattering processes in quantum materials emerge as resonances in electronic transport, including confined modes, Andreev states, and Yu-Shiba-Rusinov states. However, in most instances, these resonances are driven by a single scattering mechanism. Here, in this paper, we show the appearance of resonances due to the combination of two simultaneous scattering mechanisms, one from superconductivity and the other from graphene p-n junctions. These resonances stem from Andreev reflection and Klein tunneling that occur at two different interfaces of a hole-doped region of graphene formed at the boundary with superconducting graphene due to proximity effects from Bi 2 Sr 2 Ca 1 Cu 2 O 8+δ . The resonances persist with gating from p + -p and p-n configurations. The suppression of the oscillation amplitude above the bias energy which is comparable to the induced superconducting gap indicates the contribution from Andreev reflection. Our experimental measurements are supported by quantum transport calculations in such interfaces, leading to analogous resonances. Our results put forward a hybrid scattering mechanism in graphene–high-temperature superconductor heterojunctions of potential impact for graphene-based Josephson junctions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Final Booster Complex Design for the Jefferson Lab Electron Ion Collider*

In this work we show the final iteration of the design for the booster complex of the Jefferson Lab EIC, which would have brought the ions from an energy (proton) of 150 MeV up to 12.1 GeV. This complex would have consisted of two figure-8 rings. The Low Energy Booster (LEB) which would have accelerated its protons from 150 MeV to 8 GeV, and has had its lattice tweaked to increase the effectiveness of chromaticity cancellations. The High Energy Booster (HEB) would have brought the 8 GeV protons up to 12.1 GeV. The HEB would in the tunnel that was designed for the collider rings, sitting on top of them. It has had a bypass around the interaction region added, as well as a cooling solenoid installed.

Nissen, E. A.↗
DOE OSTI2023

Structure and Electronic Properties of Mesopores in Si PV Devices with PLEO Contacts

All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2022

Signatures of Multiband Effects in High-Harmonic Generation in Monolayer MoS 2

High-harmonic generation (HHG) in solids has been touted as a way to probe ultrafast dynamics and crystal symmetries in condensed matter systems. Here, we investigate the polarization properties of high-order harmonics generated in monolayer MoS 2 , as a function of crystal orientation relative to the mid-infrared laser field polarization. At several different laser wavelengths we experimentally observe a prominent angular shift of the parallel-polarized odd harmonics for energies above approximately 3.5 eV, and our calculations indicate that this shift originates in subtle differences in the recombination dipole strengths involving multiple conduction bands. Further, this observation is material specific and is in addition to the angular dependence imposed by the dynamical symmetry properties of the crystal interacting with the laser field, and may pave the way for probing the vectorial character of multiband recombination dipoles.

2-dimensional systems↗
DOE OSTI2021

Unconventional chiral charge order in kagome superconductor KV 3 Sb 5

Intertwining quantum order and non-trivial topology is at the frontier of condensed matter physics. A charge-density-wave-like order with orbital currents has been proposed for achieving the quantum anomalous Hall effect in topological materials and for the hidden phase in cuprate high-temperature superconductors. However, the experimental realization of such an order is challenging. Here we use high-resolution scanning tunnelling microscopy to discover an unconventional chiral charge order in a kagome material, KV 3 Sb 5 , with both a topological band structure and a superconducting ground state. Through both topography and spectroscopic imaging, we observe a robust 2 × 2 superlattice. Spectroscopically, an energy gap opens at the Fermi level, across which the 2 × 2 charge modulation exhibits an intensity reversal in real space, signalling charge ordering. At the impurity-pinning-free region, the strength of intrinsic charge modulations further exhibits chiral anisotropy with unusual magnetic field response. Therefore theoretical analysis of our experiments suggests a tantalizing unconventional chiral charge density wave in the frustrated kagome lattice, which can not only lead to a large anomalous Hall effect with orbital magnetism, but also be a precursor of unconventional superconductivity.

36 MATERIALS SCIENCE↗
DOE OSTI2024

The Role of Side Chains and Hydration on Mixed Charge Transport in n ‐Type Polymer Films

Abstract Introducing ethylene glycol (EG) side chains to a conjugated polymer backbone is a well‐established synthetic strategy for designing organic mixed ion‐electron conductors (OMIECs). However, the impact that film swelling has on mixed conduction properties has yet to be scoped, particularly for electron‐transporting (n‐type) OMIECs. Here, the authors investigate the effect of the length of branched EG chains on mixed charge transport ofn‐type OMIECs based on a naphthalene‐1,4,5,8‐tetracarboxylic‐diimide‐bithiophene backbone. Atomic force microscopy (AFM), grazing‐incidence wide‐angle X‐ray scattering (GIWAXS), and scanning tunneling microscopy (STM) are used to establish the similarities between the common‐backbone films in dry conditions. Electrochemical quartz crystal microbalance with dissipation monitoring (EQCM‐D) and in situ GIWAXS measurements reveal stark changes in film swelling properties and microstructure during electrochemical doping, depending on the side chain length. It is found that even in the loss of the crystallite content upon contact with the aqueous electrolyte, the films can effectively transport charges and that it is rather the high water content that harms the electronic interconnectivity within the OMIEC films. These results highlight the importance of controlling water uptake in the films to impede charge transport inn‐type electrochemical devices.

Chemistry↗
DOE OSTI2021

Aerodynamic integration produces a vehicle shape with a negative drag coefficient

Negative drag coefficients are normally associated with a vessel outfitted with a sail to extract energy from the wind and propel the vehicle forward. Therefore, the notion of a heavy vehicle, that is, a semi truck, that generates negative aerodynamic drag without a sail or any external appendages may seem implausible, especially given the fact that these vehicles have some of the largest drag coefficients on the road today. However, using both wind tunnel measurements and computational fluid dynamics simulations, we demonstrate aerodynamically integrated vehicle shapes that generate negative body-axis drag in a crosswind as a result of large negative frontal pressures that effectively “pull” the vehicle forward against the wind, much like a sailboat. While negative body-axis drag exists only for wind yaw angles above a certain analytical threshold, the negative frontal pressures exist at smaller yaw angles and subsequently produce body-axis drag coefficients that are significantly less than those of modern heavy vehicles. The application of this aerodynamic phenomenon to the heavy vehicle industry would produce sizable reductions in petroleum use throughout the United States.

42 ENGINEERING↗
DOE OSTI2024

Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. By convolving data from scanning tunneling microscopy and high-angle annular dark field scanning transmission electron microscopy, we reconstruct 3D interfacial atomic structure and employ an atomistic multi-valley effective mass theory to quantify qubit spectral variability. The results indicate (1) appreciable valley splitting (VS) variability of ~50% owing to alloy disorder and (2) roughness-induced double-dot detuning bias energy variability of order 1–10 meV depending on well thickness. For measured intermixing, atomic steps have negligible influence on VS, and uncorrelated roughness causes spatially fluctuating energy biases in double-dot detunings potentially incorrectly attributed to charge disorder. Our approach yields atomic structure spanning orders of magnitude larger areas than post-growth microscopy or tomography alone, enabling more holistic predictions of disorder-induced qubit variability.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗