Oriented Te thin films.
Vapor deposited tellurium thin films orientation, noting effect of characteristic spiral chain structure along c-axis
Dutton, R. W.↗
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Results for “THIN FILMS”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Mechanisms of reversal with bias fields, deduced from dynamic magnetization configuration photogrphs of thin films
Ni-Fe thin films flux reversal with transverse bias field from dynamic magnetization configuration photographs
Humphrey, F. B.↗
Thermal and radiation stability of thin-film cermet resistive elements
Thin film cermet resistive elements physical controls electrical properties, physical controls, thermal and radiation stability
Tarpley, J. L.↗
Preparation and evaluation of thin-film sodium tungsten bronzes
Thin films of sodium tungsten bronze (NaxWO3) were investigated as reversible sodium ion electrodes for solid electrolytes. The films were made by electron beam evaporation of the three phases, W metal, Na2WO4, and WO3, followed by sintering. The substrates were sodium beta alumina disks and glass slides. X-ray diffraction analyses of the films showed that sintering in dry nitrogen with prior exposure to air lead to mixed phases. Sintering in vacuum with no air exposure produced tetragonal I bronze with a nominal composition of Na0.31WO3, single phase within the limits of X-ray diffraction detectability. The films were uniform and adherent on sodium beta alumina substrates. The ac and dc conductivities of the beta alumina were measured with the sodium tungsten bronze films as electrodes. These experiments indicated that the tetragonal I bronze electrodes were not completely reversible. This may have resulted from sodium ion blocking within the bronze film or at the bronze beta alumina interface. Methods for attempting to make more completely reversible electrodes are suggested.
Kautz, H. E.↗
Ovonic switching in tin selenide thin films
Amorphous tin selenide thin films which possess Ovonic switching properties were fabricated using vacuum deposition techniques. Results obtained indicate that memory type Ovonic switching does occur in these films the energy density required for switching from a high impedance to a low impedance state is dependent on the spacing between the electrodes of the device. The switching is also function of the magnitude of the applied voltage pulse. A completely automated computer controlled testing procedure was developed which allows precise control over the shape of the applied voltage switching pulse. A survey of previous experimental and theoretical work in the area of Ovonic switching is also presented.
Baxter, C. R.↗
Ovonic type switching in tin selenide thin films
Amorphous tin selenide thin films which possess Ovonic type switching properties are fabricated using vacuum deposition techniques. The devices are fabricated in a planar configuration and consist of amorphous tin selenide deposited over silver contacts. Results obtained indicate that Ovonic type memory switching does occur in these films with the energy density required for switching from a high impedance to a low impedance state being dependent on the spacing between the electrodes of the device. There is also a strong implication that the switching is a function of the magnitude of the applied voltage pulse.
Baxter, C. R.↗
Surface temperature measurements using a thin film thermal array
A thin film device was designed and fabricated to measure surface temperatures. An array of eight integrated thermal sensors are mounted on a 0.002 inch (0.05 mm) Kapton film and multiplexed to obtain an area thermal measurement. The device was tested on a flat plate airfoil and demonstrated a temperature variation of 0.55 C maximum and 0.05 C minimum compared to embedded thermocouples. Future improvements are also discussed.
Dillon-Townes, L. A.↗
Directions for further development of GaAs/CuInSe2 thin film tandem cells
Multijunction thin film solar cells utilizing GaAs and CuInSe2 as semiconductor absorbers are rapidly developing, becoming a viable technology for space power systems with an unparalleled combination of high efficiency, low mass, and high radiation tolerance. The prospect for evolutionary improvement of this type of cell towards efficiency of approximately equals 30 percent and specific power greater than 1 kW/kg while retaining the attribute of high radiation tolerance are good. Limitations of the present configuration and possible avenues for circumventing these problems are presented.
Stanbery, Billy J.↗
Theoretical and material studies of thin-film electroluminescent devices
Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.
Summers, C. J.↗
Growth kinetics and characterizations of gallium nitride thin films by remote PECVD
Thin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. XRD reveals an increased tendency to ordered growth in the (0001) direction with increasing growth temperature, He flow rate, and RF plasma power. IR spectra show the fundamental lattice mode of GaN at 530 cm without evidence for vibrational modes of hydrocarbon groups.
Choi, S. W.↗
Continued improvment of large area, in situ sputter deposition of superconducting YBCO thin films
The deposition of thin films of superconducting YBa2Cu3O7-x onto substrates of up to 3-in diameter by an integrated off-axis sputtering is reported. The substrate is located above the center of an 8-in-diameter YBCO planar target, and, in conjunction with a negative ion shield, negative ion effects are avoided. A large radiant heater provides backside, noncontact heating of the bare substrates. YBCO films have been grown on polished 1-cm2 MgO and LaAlO3 substrates with Tc = 90 K or greater, Jc = 2.5 x 10 exp 6 A/sq cm or greater at 77 K, and microwave surface resistance Rs less than 0.4 micro-ohm at 77 K and 10 GHz. The films have a very smooth surface morphology. Uniformity data for LaAlO3 substrates are less than +/-5 percent in Rs. Thickness uniformity results for 3-in substrates indicate less than 10 percent variation. The growth of epitaxial insulating films for use with YBCO films and application of the YBCO films in microwave devices are briefly discussed.
Truman, J. K.↗
Cellulose triacetate, thin film dielectric capacitor
Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.
Yen, Shiao-Ping S.↗
Cellulose triacetate, thin film dielectric capacitor
Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.
Yen, Shiao-Ping S.↗
Thin film 2H .alpha.-SiC
Thin films of 2H .alpha.-silicon carbide are produced by pulsed laser ablation.
Stan, Mark Anthony↗
Effects of processing parameters on the morphologies of complex sesquioxide thin films
Controlling and predicting the morphology of lanthanide sesquioxides in thin film form is vital to their use in current applications. In the present study, single and codeposited Sm2O3, Er2O3, and Lu2O3 thin films were grown on yttria-stabilized zirconia (8%) substrates by radio frequency magnetron sputtering at room temperature and 500 °C. The effect of two different substrate temperatures and altering the oxide cation on the structural and morphological properties of the films was analyzed. The thin films were characterized by profilometry, scanning electron microscopy, transmission electron microscopy, and x-ray diffraction. The single-component Lu2O3 and Sm2O3 films obtained were of the cubic phase, and the Er2O3 was a mix of cubic and monoclinic phases. It was observed for both the Er2O3 and Lu2O3 films that increasing the substrate temperature to 500 °C resulted in larger grained polycrystalline films. In contrast, large grained polycrystalline films were obtained at both room temperature and 500 °C for Sm2O3 and uneven granularity increased as temperature increased. Codeposition of Lu2O3 and Sm2O3, and Lu2O3 and Er2O3 resulted in a cubic bixbyite phase (the C phase of the lanthanide sesquioxide) solid solution. It was observed that the structure and morphology of the films can be controlled by manipulating deposition parameters. Both substrate temperature and altering the oxide cation contributed to changes in crystallinity and grain structure, which can modify the chemical and physical properties of the films for their applications.
36 MATERIALS SCIENCE↗
Machine-learning-enabled on-the-fly analysis of RHEED patterns during thin film deposition by molecular beam epitaxy
Thin film deposition is a fundamental technology for the discovery, optimization, and manufacturing of functional materials. Deposition by molecular beam epitaxy (MBE) typically employs reflection high-energy electron diffraction (RHEED) as a real-time in situ probe of the growing film. However, the state-of-the-art for RHEED analysis during deposition requires human observation. Here, we present an approach using machine learning (ML) methods to monitor, analyze, and interpret RHEED images on-the-fly during thin film deposition. In the analysis workflow, RHEED pattern images are collected at one frame per second and featurized using a pretrained deep convolutional neural network. The feature vectors are then statistically analyzed to identify changepoints; these changepoints can be related to changes in the deposition mode from initial film nucleation to a transition regime, smooth film deposition, and in some cases, an additional transition to a rough, islanded deposition regime. The feature vectors are additionally analyzed via graph analysis and community classification. The graph is quantified as a stabilization plot, and we show that inflection points in the stabilization plot correspond to changes in the growth regime. The full RHEED analysis workflow is termed RHAAPsody and includes data transfer and output to a visual dashboard. We demonstrate the functionality of RHAAPsody by analyzing the precaptured RHEED images from epitaxial depositions of anatase TiO2 on SrTiO3(001) and show that the analysis workflow can be executed in less than 1 s. Our approach shows promise as one component of ML-enabled real-time feedback control of the MBE deposition process.
36 MATERIALS SCIENCE↗
Applications of thin-film photovoltaics for space
The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.
Landis, Geoffrey A.↗
Tunable structural, morphological and optical properties of undoped, Mn, Ni and Ag-doped CuInS 2 thin films prepared by AACVD
The preparation of high-quality copper indium sulphide, CuInS 2 photo-absorber material with tunable properties for efficient, low-cost, thin film solar cells using scalable methods remains a challenge. In order to address this, high quality off-stoichiometric undoped and Mn, Ni and Ag-doped CuInS 2 (CIS) thin films have been deposited onto glass substrates by aerosol-assisted chemical vapour deposition (AACVD) using metal diethyldithiocarbamate precursors at temperatures of 350, 400 and 450 °C. Data from powder X-ray diffraction (p-XRD), Raman spectroscopy and scanning electron microscopy-energy dispersive X-ray spectroscopy (SEM-EDS) suggest a correlation of morphology and composition of tetragonal phase (chalcopyrite and copper-gold-type) sulphur-deficient microcrystalline CIS thin films. For undoped thin films, near-infrared optical absorption and emission with tunable band gap between 1.32 and 1.42 eV are likely associated with donor-acceptor pairs involving deep or shallow electronic states such as sulphur vacancies (V S •• ), indium-copper anti-sites (In Cu •• ) and indium interstitials (In i ••• ) as donors and copper vacancies (V Cu ') as acceptors. Whilst Mn-doped thin films exhibit minimal tunable properties, Ni and Ag-doped films exhibit tunable morphology, composition and near-infrared absorption for small dopant content. Here, though further studies are required to explore the defect chemistry, these results show the utility of AACVD in tuning structural, morphological and optical properties of undoped, Mn, Ni and Ag-doped CIS thin films.
36 MATERIALS SCIENCE↗