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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Plasmonic Control of Radiation and Absorption Processes in Semiconductor Quantum Dots

This document reviews a research program funded by the DOE Office of Science, which has been focused on the control of radiation and absorption processes in semiconductor photonic materials (including III-nitride quantum wells and quantum dots), through the use of specially designed metallic nanoparticles (NPs). By virtue of their strongly confined plasmonic resonances (i.e., collective oscillations of the electron gas), these nanostructures can concentrate incident radiation into sub-wavelength “hot spots” of highly enhanced field intensity, thereby increasing optical absorption by suitably positioned absorbers. By reciprocity, the same NPs can also dramatically increase the spontaneous emission rate of radiating dipoles located within their hot spots. The NPs can therefore be used as optical antennas to enhance the radiation output of the underlying active material and at the same time control the far-field pattern of the emitted light. The key accomplishments of the project include the demonstration of highly enhanced light emission efficiency as well as plasmonic collimation and beaming along geometrically tunable directions, using a variety of plasmonic excitations. Initial results showing the reverse functionality (i.e., plasmonic unidirectional absorption and photodetection) have also been generated with similar systems. Furthermore, a new paradigm for the near-field control of light emission has been introduced through rigorous theoretical studies, based on the use of gradient metasurfaces (i.e., optical nanoantenna arrays with spatially varying shape, size, and/or orientation). These activities have been complemented by materials development efforts aimed at the synthesis of suitable light-emitting samples by molecular beam epitaxy. In the course of these efforts, a novel technique for the growth of III-nitride quantum dots has also been developed (droplet heteroepitaxy), with several potential advantages in terms of compositional and geometrical control. The results of these studies provide fundamental new understanding of optical processes at the nanoscale, including near-field energy transfer between quantum emitters and photonic nanostructures, dissipation phenomena of plasmonic excitations, and radiation from nanoantennas. Furthermore, they may open the way to entirely new device concepts and applications, in a broad range of disciplines including optoelectronics, sensing, spectroscopy, photovoltaics, and quantum information science. A specific application of particularly strong relevance to the DOE mission is the development of energy efficient LED active materials for solid-state lighting, based on plasmonic enhancement effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Origin of Broad-Band Emission and Impact of Structural Dimensionality in Tin-Alloyed Ruddlesden–Popper Hybrid Lead Iodide Perovskites

Hybrid organic-inorganic lead halide perovskites have shown promising results as active layers in light-emitting diodes, typically utilizing the near-monochromatic, free exciton emission. Some perovskite compounds, however, show broad-band emission that is more intense than the free exciton counterpart. In this study, we show that the light emission properties of Ruddlesden-Popper hybrid perovskites PEA 2 MA n-1 Pb n I 3n+1 (PEA = phenethylammonium, MA = methylammonium) can be tuned by Sn alloying and are highly sensitive to Sn %. With increasing dimensionality, the broad-band emission quantum yield decreases drastically, from 23% in n = 1 to <1% for the n = 3 compound. Using density functional theory calculations and transient reflectance spectroscopy, the broad emission is identified as originating from self-trapped excitons. A dynamic picture of the formation process is also presented, for which ultrafast (<5 ps) hole-trapping at the Sn site is the first step, followed by electron localization from Coulombic interaction. These findings are particularly valuable for designing perovskite materials with intense room-temperature broad-band emission for solid-state lighting applications.

14 SOLAR ENERGY↗
DOE OSTI2018

Identifying an efficient, thermally robust inorganic phosphor host via machine learning

Abstract Rare-earth substituted inorganic phosphors are critical for solid state lighting. New phosphors are traditionally identified through chemical intuition or trial and error synthesis, inhibiting the discovery of potential high-performance materials. Here, we merge a support vector machine regression model to predict a phosphor host crystal structure’s Debye temperature, which is a proxy for photoluminescent quantum yield, with high-throughput density functional theory calculations to evaluate the band gap. This platform allows the identification of phosphors that may have otherwise been overlooked. Among the compounds with the highest Debye temperature and largest band gap, NaBaB 9 O 15 shows outstanding potential. Following its synthesis and structural characterization, the structural rigidity is confirmed to stem from a unique corner sharing [B 3 O 7 ] 5– polyanionic backbone. Substituting this material with Eu 2+ yields UV excitation bands and a narrow violet emission at 416 nm with a full-width at half-maximum of 34.5 nm. More importantly, NaBaB 9 O 15 :Eu 2+ possesses a quantum yield of 95% and excellent thermal stability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Scalable, Economical Fabrication Processes for Ultra-Compact Warm-White LEDs

Conventional warm-white LED component fabrication consists of a large number of sequential steps which are required to incorporate electrical, mechanical, and optical functionality into the component. Each of these steps presents cost and yield challenges which multiply throughout the entire process. Although there has been significant progress in LED fabrication over the last decade, significant advances are needed to enable further reductions in cost per lumen while not sacrificing efficacy or color quality. Cree conducted a focused 18-month program to develop a new low-cost, high-efficiency light emitting diode (LED) architecture enabled by novel large-area parallel processing technologies, reduced number of fabrication steps, and minimized raw materials use. This new scheme is expected to enable ultra-compact LED components exhibiting simultaneously high efficacy and high color quality. By the end of the program, Cree fabricated warm-white LEDs with a room-temperature “instant on” efficacy of >135 lm/W at ~3500K and 90 CRI (when driven at the DOE baseline current density of 35 A/cm2). Cree modified the conventional LED fabrication process flow in a manner that is expected to translate into simultaneously high throughput and yield for ultra-compact packages. Building on its deep expertise in LED wafer fabrication, Cree developed these ultra-compact LEDs to have no compromises in color quality or efficacy compared to their conventional counterparts. Despite their very small size, the LEDs will also be robustly electrically integrated into luminaire systems with the same attach yield as conventional packages. The versatility of the prototype high-efficacy LED architecture will likely benefit solid-state lighting (SSL) luminaire platforms ranging from bulbs to troffers. We anticipate that the prototype LEDs will particularly benefit luminaires with large numbers of distributed compact packages, such as linear and area luminaires (e.g. troffers). The fraction of total SSL luminaire cost made up by the LEDs themselves has steadily fallen over the past several years, but can still make up 30% or more of the bill of materials; the new LED design will radically lower this proportion. Ultra-compact, highly efficient LEDs with optimal distribution in the system will further benefit luminaire materials and assembly costs by reducing the complexity and volume of thermal management and optical subsystems.

42 ENGINEERING↗
DOE OSTI2026

Control of Excitonic Energy Transfer in RGB Quantum Dot:Polymer Composites for Tunable White Emission

Tint-controlled white light is crucial for both illumination systems and display applications. Here, in this study, we demonstrate solution-processed quantum-dot light-emitting diodes (QD-LEDs) featuring a red–green–blue (RGB) QD–poly(methyl methacrylate) (PMMA) composite emissive layer (EML) for tunable white electroluminescence (EL). In this composite EML, PMMA functions as a dispersion matrix that modulates the interdot spacing (d), thereby controlling Förster resonance energy transfer (FRET) between QDs. By adjustment of the PMMA content, the balance of R, G, and B emissions is controlled, enabling systematic and continuous tuning of the EL color from greenish to reddish white at a fixed RGB ratio and constant driving bias. Time-resolved photoluminescence measurements confirm that the variation in the exciton lifetime with the PMMA fraction is the primary factor for tuning the EL color. Notably, nearly pure white EL with CIE coordinates close to (0.33, 0.33) is achieved using a diluted PMMA matrix without significant degradation of the electrical properties. Our results demonstrate d as an independent design parameter for decoupling color tuning from RGB composition and electrical operation, providing a versatile design framework for high-quality white- or tint-controlled QD-LEDs toward advanced solid-state lighting and display technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High Temperature Optocoupler for 3D High Density Power Modules

The goal of this proposed research is to develop a reliable high-temperature optocouplers, which can operate at 250°C with at least ten-year lifetime, and replace isolation transforms as the galvanic isolation solution for the 3D integration of high density power modules. The electrification of future transportations (i.e., electric vehicles) will continuously drive the demand for high density power modules. Optocouplers (i.e., packaged light emitter and detector) as a promising candidate to replace bulky isolation transformers are highly desirable to facilitate the continuous scale-down of gate driver circuitry that will lead to 3D high density power modules and achieve disruptive performance in terms of thermal management, power density, power efficiency, reliability and operating environments. However, regular semiconductor optoelectronic materials and devices have significant difficulty functioning in the harsh environments designated for high density power module usage (such as operation at high temperatures). Ultimately, it is not the intrinsic properties of power devices that prevent their use at higher temperatures, but rather the low voltage electronics needed to drive them and the packaging that surrounds them. The typical operating temperature for optocouplers is only up to 100°C, due to the limitations of light emitting diode (LED) devices inside and packaging materials. A systematic characterization methodology will be developed to analyze the performance, lifetime and reliability of LED devices and distinguish multiple failure mechanisms at high temperatures. An original methodology of “design for reliability” will be developed to design the optoelectronic devices with high reliability and long lifetime at high temperatures. A new architecture of high temperature high reliable optocouplers will be developed, fabricated and demonstrated with continuous operating at 250°C. The development of efficient, reliable high density 3D power modules is the foundation for energy efficiency and energy reliability. Enabled with advanced 3D integration and packaging technologies, high density power module solutions can achieve much more superior performance over the conventional discrete solutions in terms of efficiency, thermal management and power density. The proposed concept of high temperature optocouplers as the galvanic isolation solution for high density power modules will bring together interdisciplinary research involving the wide bandgap materials, optoelectronics, high reliable device design, electronics packaging and power modules. A streamline of skilled personnel would be trained including graduate and undergraduate students, local engineers and scientists which are in great demand to both academia and optoelectronics industry. The proposed research topics, such as, solid state lighting and high temperature device reliability, are currently of major interest at the Department of Energy, in particular, Sandia National Laboratories. This project can enhance collaborations between the University of Arkansas (UA) and Sandia National Laboratories. The findings of the proposed research are expected to be integrated into high density 3-D power modules at the Engineering Research Center for Power Optimization for Electro-Thermal Systems (POETS).

42 ENGINEERING↗
DOE OSTI2021

Additively Manufactured Solid-State Luminaire

This project addresses several key barriers to wide-spread adoption of additive manufacturing (AM) technology as applied to solid state lighting luminaires. The solution will utilize cutting edge AM approaches for integrating structure with thermal management solutions, electronic functionality, and optics. The research team (Eaton, Lighting Research Center (LRC) at Rensselaer Polytechnic Institute, Xerox Research Centre of Canada (XRCC)) utilize their AM and lighting expertise to investigate breakthrough manufacturing approaches that will significantly reduce cost, eliminate manufacturing process waste, and improve luminaire efficacy. The team has identified critical areas of research and proposed novel technical approaches to achieve these goals. Key areas of focus in Budget Period 1 (BP1) of the project quantified the impact of applying AM methodologies to the main, discrete subsystem components (Heat Sink, Housing, Optics, Electronics). Budget Period 2 (BP2) research explored similar impact on a fully integrated, AM modular luminaire concept. Final Achievement of the Target Metrics for the project are as follows: Material Reduction: achieved > 57.45% (target is 50%) Manufacturing Process: achieved > 51% reduction (target is 50%) Application Efficacy: achieved 126 lm/W (target is 130 lm/W) First Cost vs Baseline: demonstrated 49% improvement in project timing, 59% improvement in man hour savings and 89% worse BOM costs (due to deficiencies in current “state of the art” equipment). The BOM costs improve to 53% savings if state of the art processes and equipment could have been used.

3D Printing↗
DOE OSTI2013

Demonstration of LED Street Lighting in Kansas City, MO

This report documents a study of nine different light-emitting diode (LED) street lighting products installed in February 2011 as replacements for incumbent high-pressure sodium (HPS) luminaires in the city of Kansas City, Missouri (KCMO). The subject lighting investigation was undertaken by the city as part of a continued focus on improving street safety that had begun with an earlier extensive upgrade to the streetlighting system in the late 1990s, which substantially improved both the quantity and uniformity of its lighting. The current study was conducted in support of the U.S. Department of Energy’s Municipal Solid-State Street Lighting Consortium, via support of the GATEWAY Solid-State Lighting Technology Demonstration Program, and involved multiple staff from different organizations employing a variety of meters and procedures.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2015

Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam

Strained InGaN/GaN core-shell nanowires (NWs) are promising candidates for solid state lighting applications due to their superior properties compared to planar films. NW based devices consist of multiple functional layers, which sum up to many hundred nanometers in thickness, that can uniquely be accessed in a non-destructive fashion by hard X-rays. Here, we present a detailed nanoscale strain mapping performed on a single, 400 nm thick and 2 μm long core-shell InGaN/GaN nanowire with an x-ray beam focused down to 100 nm. We observe an inhomogeneous strain distribution caused by the asymmetric strain relaxation in the shell. One side of the InGaN shell was fully strained, whereas the other side and the top part were relaxed. Additionally, tilt and strain gradients were determined at the interface with the substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

III-Nitride Nanowire Lasers

In recent years there has been a tremendous interest in nanoscale optoelectronic devices. Among these devices are semiconductor nanowires whose diameters range from 10-100 nm. To date, nanowires have been grown using many semiconducting material systems and have been utilized as light emitting diodes, photodetectors, and solar cells. Nanowires possess a relatively large index contrast relative to their dielectric environment and can be used as lasers. A key gure of merit that allows for nanowire lasing is the relatively high optical con nement factor. In this work, I discuss the optical characterization of 3 types of III-nitride nanowire laser devices. Two devices were designed to reduce the number of lasing modes to achieve singlemode operation. The third device implements low-group velocity mode lasing with a photonic crystal constructed of an array of nanowires. Single-mode operation is necessary in any application where high beam quality and single frequency operation is required. III-Nitride nanowire lasers typically operate in a combined multi-longitudinal and multi-transverse mode state. Two schemes are introduced here for controlling the optical modes and achieving single-mode op eration. The rst method involves reducing the diameter of individual nanowires to the cut-o condition, where only one optical mode propagates in the wire. The second method employs distributed feedback (DFB) to achieve single-mode lasing by placing individual GaN nanowires onto substrates with etched gratings. The nanowire-grating substrate acted as a distributed feedback mirror producing single mode operation at 370 nm with a mode suppression ratio (MSR) of 17 dB. The usage of lasers for solid state lighting has the potential to further reduce U.S. lighting energy usage through an increase in emitter e ciency. Advances in nanowire fabrication, speci cally a two-step top-down approach, have allowed for the demonstration of a multi-color array of lasers on a single chip that emit vertically. By tuning the geometrical properties of the individual lasers across the array, each individual nanowire laser produced a di erent emission wavelength yielding a near continuum of laser wavelengths. I successfully fabricated an array of emitters spanning a bandwidth of 60 nm on a single chip. This was achieved in the blue-violet using III-nitride photonic crystal nanowire lasers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Wide bandgap semiconductor materials and devices

The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities. Specifically, an increase in the bandgap leads to shorter wavelength emission and an increased breakdown electric field, which has direct consequences for solid-state lighting like light-emitting diodes (LEDs) and laser diodes (LDs) from the visible (blue-green, blue, and violet) and beyond (UV and deep-UV) spectral range and for radically improved power devices supported by a higher intrinsic breakdown strength. Wide bandgap (WBG) semiconductors represent the frontier of materials that satisfy these criteria and include group IV, III–V, and II–VI material families like SiC (3.2 eV), GaN (3.4 eV), and ZnO (3.4 eV), respectively. With even larger bandgaps exceeding 4 eV, ultrawide bandgap (UWBG) semiconductors include diamond, III-nitrides incorporating Al and B (e.g., AlN, BN, and AlGaN), and sesquioxides like Ga 2 O 3 and (Al,Ga) 2 O 3 . These materials span widely varying stages of technological maturity, with SiC and GaN platforms among the most mature with commercially available devices in RF and high-power electronics, while other platforms such as Ga 2 O 3 rapidly advancing and poised to enable new UV and deep-UV optoelectronic devices. This Special Topic on Wide Bandgap Semiconductor Materials and Devices covers broad research subtopics on WBG and UWBG materials that span bulk crystals, epitaxy and substrate technologies, fundamental defect science, and doping, as well as electronic and optoelectronic device fabrication and characterization. Here, we highlight works from the collection, which we categorize by material platform of SiC, III-nitrides, and Ga 2 O 3 and related alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Optical property investigations of polystyrene capped Ca{sub 2}P{sub 2}O{sub 7}:Dy{sup 3+} persistent phosphor

Highlights: • Synthesis of polymer capped pyrophosphate phosphors by citrate gel method. • Radiative lifetime is calculated from parameters of Judd-Ofelt theory and ICP-AES. • Reaction mechanism is discussed leading to high photoluminescence efficiency. • PL emission spectrum reveals broad band emission suitable for solid state lighting. - Abstract: By virtue of enhanced photosensivity, good optical response and better thermal stability, organic–inorganic hybrid materials are contemplated as one of the alternatives for designing advanced optoelectronic devices and innovative photonic applications. A novel inorganic organic hybrid Ca{sub 2}P{sub 2}O{sub 7}:Dy{sup 3+} phosphor has been fabricated by Pechini method. The optical property of synthesized phosphor is successfully altered by the in corporation of polystyrene sulfonic acid as capping agent in the colloidal solution. The phase purity and the average particle size of the prepared phosphor were calculated from X-ray diffraction (XRD) employing Debye Scherrer method. The morphological and chemical investigations were carried out through scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) analysis. The radiative transitions are explained on the basis of Judd-Ofelt theory and on the basis of derived parameters, the radiative lifetime of persistent hybrid Ca{sub 2}P{sub 2}O{sub 7}:Dy{sup 3+} phosphor is calculated as 5.33 ms. This paper explores the mechanism leading to high photoluminescence efficiency using organic capping additives. The photoluminescence (PL) graphs reveal broad band emission at 482 nm (blue) and 573 nm (yellow) corresponding to {sup 4}F{sub 9/2}-{sup 6}H{sub 15/2} and {sup 4}F{sub 9/2}-{sup 6}H{sub 13/2} transitions of Dy{sup 3+}, respectively. The Commission International De I-Eclairage (CIE) chromaticity co-ordinates were calculated from emission spectra and the values (x, y) were approaching to standard value of white emission. The synthesized pyrophosphate phosphors can thereby account in multiple potential applications including white light emitting diodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Self‐Trapped and Free Exciton Dynamics in Vacuum‐Deposited Cesium Copper Iodide Thin Films

Abstract Highly photoluminescent, lead‐free perovskites are of interest for displays and solid‐state light‐emitting devices. In this report, streak camera‐based time‐resolved emission and transient absorption spanning visible to deep‐ultraviolet (UV) wavelengths are utilized to study self‐trapped and free exciton dynamics in vacuum‐deposited cesium copper halide thin films of CsCu 2 I 3 and Cs 3 Cu 2 I 5 . Self‐trapped exciton emission of CsCu 2 I 3 exhibits more noticeable changes with time in the peak position and width than Cs 3 Cu 2 I 5 . UV‐to‐blue emission is detectable for both compositions, where free exciton emission is distinct for CsCu 2 I 3 . Transient absorption shows loss of ground‐state bleach signals at early time delays for both, and the bleach signal shifts toward higher energy as time delay increases, likely due to strains induced by the newly created self‐trapped excitons. Global analysis performed on the transient absorption results yields time constants in these materials that build an overall dynamic scheme. This work aids in building a complete picture regarding light emission in these promising materials.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Uranium Doped Gallium Nitride Epitaxial Thin Films

Gallium nitride (GaN) is near ubiquitous in modern day technologies, forming the backbone of solid-state lighting and high-power electronics. Engineering the physical properties of GaN has been investigated to some degree by the incorporation or doping of most of the elements of the periodic table, but the actinides remain unexplored. Molecular beam epitaxy is used to demonstrate uranium doping of GaN single crystals. High structural quality of the host matrix is maintained despite partial elemental segregation of the uranium dopant into 1D structures at the levels presented here. Electronic transport measurements reveal relatively high conductivity, which persists down to cryogenic temperature and is characterized by the formation of narrow gaps in the electronic band structures very close to the Fermi level. Photoluminescence measurements reveal that the U-doped GaN exhibits optical behavior similar to that of the GaN substrate. The addition of actinide materials to a non-centrosymmetric, optically active, radiation-hard, and electronically tunable host matrix opens a world of possibilities for investigating and leveraging elements with high electron correlations in the pursuit of novel devices.

36 - MATERIALS SCIENCE↗
DOE OSTI2018

Unexpectedly Strong Auger Recombination in Halide Perovskites

The emergence of halide perovskites for photovoltaic applications has triggered great interest in these materials for solid-state light emission. Higher order electron–hole recombination processes can critically affect the efficiency of such devices. In the present work, the Auger recombination coefficients are computed in the prototypical halide perovskite, CH 3 NH 3 PbI 3 (MAPbI 3 ), using first-principles calculations. It is demonstrated that Auger recombination is responsible for the exceptionally high third-order recombination coefficient observed in experiment. The large Auger coefficient is attributed to a coincidental resonance between the bandgap and interband transitions to a complex of higher-lying conduction bands. It is also found that the distortions of PbI 6 octahedra contribute significantly to the high Auger coefficient, offering potential avenues for materials design.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Applications of plasma-enhanced metalorganic chemical vapor deposition

The use of plasma enhancement for growth of III-V compound semiconductor materials by metalorganic chemical vapor deposition (MOCVD) is examined, to improve control of microstructure, develop understanding of the underlying growth mechanisms, and expand the range of materials combinations for photovoltaic and solid-state lighting applications. Whereas plasma is commonly used with group-IV materials, such as silicon, few studies have examined the impact of plasma-enhanced MOCVD (PE-MOCVD) for III-V materials growth. PE-MOCVD provides improved decomposition of metalorganic precursors, which is driven by hydrogen plasma to augment hydride reactions and thermal pyrolysis, but plasma generation requires low reactor pressure. We have demonstrated elemental Al films grown by PE-MOCVD, which show distinct crystallographic texturing, and assume epitaxial microstructure upon post-growth annealing. We also demonstrate PE-MOCVD of GaAs at temperatures as low as 300 °C. With increasing radio-frequency power, the GaAs growth rate shows a transition from power limited to mass-transport limited. PE-MOCVD grown Ga 0.5 In 0.5 P shows no detectable spontaneous atomic ordering, which offers a mechanism to form order/disorder unicompositional heterostructures, without temperature change or impurity incorporation. In its current implementation, PE-MOCVD grown films have shown microstructural degradation, that we attribute to direct plasma exposure during growth. Improvements in the system design and growth sequences are at the focus of on-going efforts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Fluorescence properties of Tb{sup 3+} and Sm{sup 3+} activated novel LiAl{sub 7}B{sub 4}O{sub 17} host via solution combustion synthesis

Graphical abstract: - Highlights: • New LiAl{sub 7}B{sub 4}O{sub 17}:Tb{sup 3+}, Sm{sup 3+} phosphors were synthesized first time by solution combustion method. • The LiAl{sub 7}B{sub 4}O{sub 17}:Tb{sup 3+} emissions; 489, 544, 586 and 623 nm (λ{sub ex} = 234 nm). • Also for LiAl{sub 7}B{sub 4}O{sub 17}:Sm{sup 3+}; 564, 601 and 649 nm (λ{sub ex} = 403 nm). • Synthesized materials were characterized by powder XRD, FE-SEM. • Concentration quenching mechanism and critical transfer distance of Tb{sup 3+} and Sm{sup 3+} in the prepared sample has been investigated. - Abstract: Novel LiAl{sub 7}B{sub 4}O{sub 17} (LABO) phosphor activated with trivalent rare earth ions (RE = Tb, Sm) was synthesized by using solution combustion synthesis. The powder X-ray diffraction (XRD), field emission-scanning electron microscope (FE-SEM), photoluminescence (PL), critical transfer distance (R{sub c}) and quenching mechanism studies were employed to characterize the samples. Under ultraviolet irradiation of the LiAl{sub 7}B{sub 4}O{sub 17}: Tb{sup 3+}, Sm{sup 3+} phosphors exhibit the typical green ({sup 5}D{sub 4} → {sup 7}F{sub j} = 6, 5, 4 and 3) emission band of the Tb{sup 3+} ions, as well as an orange-red and red ({sup 4}G{sub 5/2} → {sup 6}H{sub J=5/2,} {sub 7/2,} {sub 9/2}) emission bands of the Sm{sup 3+} ions. These results suggest that Tb{sup 3+} and Sm{sup 3+} activated LABO phosphor could be promising in vision of the necessity for solid state lighting applications.

36 MATERIALS SCIENCE↗
DOE OSTI2018

The GdF3 phosphors with enhanced multicolor luminescence via multi-channel excitation and energy migration procedure

Highlights: • Core-shell structured GdF{sub 3} phosphors were synthesized by hydrothermal method. • SiO{sub 2} coating layers prevent aggregation and sintering during thermal annealing. • The annealed CSS nanophosphors were highly dispersible. • The inserted PMA significantly enhances multicolor luminescence. • The annealed CSS phosphors exhibit enhanced multicolor luminescence properties. - Abstract: A collection of GdF{sub 3} core-shell structured (CSS) phosphors were synthesized by hydrothermal method. The as-prepared (AP) phosphors were coated with SiO{sub 2} layers to avoid aggregation and sintering during thermal annealing at 800 °C, after which the SiO{sub 2} layers were etched off and the annealed phosphors became highly dispersible. The annealed CSS phosphor aGdF{sub 3}:Eu{sup 3+}@GdF{sub 3}:Ce{sup 3+},Dy{sup 3+} shows excellent multicolor luminescence performance with the aid of dual-channel excitation and energy migration (EM) procedure of Gd{sup 3+} ions. By inserting pyromellitic acid (PMA) organic ligands into the interfaces between annealed core and AP shell layer regions, the so-called antenna effect of organic ligands of PMA forms a new excitation channel, which makes the CSS phosphor aGdF{sub 3}:Eu{sup 3+}@PMA@GdF{sub 3}:Ce{sup 3+},Dy{sup 3+} exhibit significantly enhanced multicolor luminescence via multi-channel excitation and EM process. The prepared CSS phosphors in this work are excellent candidates for applications in solid-state lighting.

36 MATERIALS SCIENCE↗