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This presentation provides an overview of recent wide bandgap device radiation hardness assurance activities at NASA and via NASA-funded grant vehicles. Devices include enhancement mode power GaN HEMTs, RF GaN HEMTs, and SiC MOSFETs and JBS diodes.
Commercially available bulk silicon carbide (SiC) has a high number (>2000/sq cm) of screw dislocations (SD) that have been linked to degradation of high-field power device electrical performance properties. Researchers at the NASA Glenn Research Center have proposed a method to mass-produce significantly higher quality bulk SiC. In order for this bulk growth method to become reality, growth of long single crystal SiC fibers must first be achieved. Therefore, a new growth method, Solvent-Laser Heated Floating Zone (Solvent-LHFZ), has been implemented. While some of the initial Solvent-LHFZ results have recently been reported, this paper focuses on further characterization of grown crystals and their growth fronts. To this end, secondary ion mass spectroscopy (SIMS) depth profiles, cross section analysis by focused ion beam (FIB) milling and mechanical polishing, and orientation and structural characterization by x-ray transmission Laue diffraction patterns and x-ray topography were used. Results paint a picture of a chaotic growth front, with Fe incorporation dependant on C concentration.
A high energy ion implantation system has been recently developed at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of multi-step, deep implantation in 4H-SiC wafers with dopant atoms, such as B, P, Al, and N. Medium and high voltage devices with deep junctions can be fabricated using this system. Lattice strain introduced by the implantation process needs to be recovered and dopant atoms activated by appropriate annealing process as the device performance is strongly associated with the extent of recovery of the lattice. Using Synchrotron X-ray Rocking Curve Topography (SXRCT) and Reciprocal Space Mapping (RSM), the strain induced by high energy implantation of Al and N in 4H-SiC in different patterns are measured and mapped. It is observed that the strain levels correlate with the total fluence levels. PiN diodes fabricated on these implanted wafers were then annealed at temperatures ranging from 1700 °C to 2000 °C for 60 min. The SXRCT and RSM analysis of the annealed samples suggests that for the same annealing duration, higher temperature leads to better lattice recovery.
We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction
We report high resolution radiation detection has been demonstrated using Ni/SiO2/n-4H-SiC metal-oxidesemiconductor vertical capacitors fabricated using highly crystalline 4H-SiC epilayers. The oxide layers have been grown thermally using two different approaches: i) in-air, and ii) oxygen-ambience oxidation. The devices fabricated using the former method exhibited dark currents one order of magnitude higher than that in the latter. The observed difference has been attributed to the back-contact series resistance and capacitance. Regardless of the difference in the device parameters, detectors prepared using both of the methods exhibited very high energy resolutions of ≤ 0.5% for 5486 keV alpha particles emitted by an 241Am radioisotope. Capacitance mode deep level transient spectroscopic (DLTS) studies revealed similar type of electrically active defects along with Z1/2 and EH5 deep level defects in both the types of devices. The DLTS scans also revealed positive polarity peaks in these devices which indicate emission from minority carrier trap centers. The activation energy corresponding to the peak was found to be ~1.2 eV which has been assigned to HK3 defects responsible for hole trapping in 4H-SiC. The possibility of appearance of the positive peak due to non-negligible impedance of the back-contact has been ruled out based on the observation that the centroid of the observed peak did not change with detectors having different device parameters.
Emergent electronic phenomena, from superconductivity to ferroelectricity, magnetism, and correlated many-body band gaps, have been observed in domains created by stacking and twisting atomic layers of Van der Waals materials. In graphene, emergent properties have been observed in ABC stacking domains obtained by exfoliation followed by expert mechanical twisting and alignment with the desired orientation, a process very challenging and nonscalable. Here, conductive atomic force microscopy shows in untwisted epitaxial graphene grown on SiC the surprising presence of striped domains with dissimilar conductance, a contrast that demonstrates the presence of ABA and ABC domains since it matches exactly the conductivity difference observed in ABA/ABC domains in twisted exfoliated graphene and calculated by density functional theory. The size and geometry of the stacking domains depend on the interplay between strain, solitons crossing, and shape of the three-layer regions. Interestingly, we demonstrate the growth of three-layer regions in which the ABA/ABC stacking domains self-organize in stable stripes of a few tens of nanometers. The growth-controlled production of isolated and stripe-shaped ABA/ABC domains open the path to fabricate quantum devices on these domains. These findings on self-assembly formation of ABA/ABC epitaxial graphene stripes on SiC without the need of time-consuming and nonscalable graphene exfoliation, alignment, and twisting provide different potential applications of graphene in electronic devices.
The Marel Power Solutions project, funded by the U.S. Department of Energy under Award DE-SC0023801, focused on advancing manufacturing techniques for power electronics in heavy-duty fuel cell vehicles. The research aimed to enhance system efficiency, reduce costs, and support broader adoption of hydrogen fuel cell technology. Key areas of investigation included power topology, thermal modeling, system architecture, and accessibility through software tools. Key Accomplishments: 1. Power Topology: - Developed an interleaved boost converter with optimized phase count, leveraging Marel’s proprietary Power Stacks. - Achieved reduced parasitic inductance and resistance, enabling high efficiency in DC-DC converters. 2. Thermal Modeling: - Integrated innovative cooling systems into compact Silicon Carbide (SiC) modules. - Simulations demonstrated the ability to dissipate significant heat (up to 7.5 kW), ensuring device reliability under heavy loads. 3. System Architecture: - Utilized simulation tools to analyze the impact of various fuel cell and vehicle parameters on efficiency. - Highlighted the role of smaller, modular improvements, such as enhanced DC-DC converters, in achieving system-wide gains. 4. Accessibility: - Evaluated and implemented MATLAB/Simulink code generation tools for real-world hardware applications. - Demonstrated the potential for rapid prototyping of custom power systems with reduced development costs. Impact and Benefits: - Efficiency and Cost Reduction: Marel’s cooling technology enhances SiC die performance, reducing the number of dies required and overall system size. - Scalability and Flexibility: The innovations support tailored solutions for diverse applications, from mass transit to mining vehicles. - Sustainability: The research promotes the integration of electrification technologies, helping meet rising energy demands sustainably. Conclusion: The project’s outcomes advance the state of power electronics for hydrogen fuel cell vehicles, enabling more efficient, compact, and cost-effective solutions. These developments lay a foundation for future innovation, contributing to the broader adoption of clean energy technologies in transportation and other industries.
Open-loop volumetric receivers work with air at atmospheric pressure and are suitable for single-cycle or multicycle power plants. A novel additively manufactured (AM) silicon carbide (SiC), ceramic matrix composite (CMC) volumetric receiver was developed that consisted of a lattice structure, which absorbs solar radiation and converts it into heat energy. Heat energy from the porous receiver was transferred to heated ambient air. The receiver acted as a convective heat exchanger, transferring heat to the fluid through convection. Engineering was facilitated to develop a high-temperature air receiver test bed at Sandia national Laboratories (SNL) capable of demonstrating a 50kWth open-loop volumetric SiC air receiver module developed by General Electric Aerospace Research (GE Aerospace). This paper presents the development of the high temperature AM SiC-CMC air receiver, the test bed, and the first testing operations of this device, which was experimentally demonstrated to achieve 1,350°C for over 3.5 hours of operation, based on input flux levels of 67–91 W/cm2 0.5-2.5 kg/s flow rates. From the test campaign results, based on the measured convective heat transfer to the airflow and bounded radiative-loss assumptions, the solar-thermal efficiency of HOTSSTAR test module was estimated to be approximately as high as 74% for representative test conditions.
We propose a TCAD (Technology Computer Aided Design)-machine learning coupled approach that combines a TCAD tool (Charon), optimization/uncertainty quantification tool (Dakota), surrogate models, and Bayesian learning capabilities. The coupling approach is used for accurate modeling and calibration of total ionizing dose (TID) induced threshold voltage (V th ) shifts in Commercial-Off-The-Shelf (COTS) semiconductor devices and to develop physics-informed TID compact models. This versatile approach is applied to model the TID effect in an exemplar COTS 3.3 kV SiC power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). With the Charon-Dakota coupling, we can determine key device geometry and doping values based on device physics, which are difficult to obtain or not available for COTS devices but important for TCAD simulation; additionally, we can efficiently generate thousands of simulation results in a large parameter space, which makes it possible to develop data-driven surrogate models and perform Bayesian calibration. Utilizing the full tool-coupling approach, we achieve calibrated TCAD simulation models that accurately capture the average TID-induced V th shifts behavior with total doses and V th shifts saturation at high doses as observed in experimental data. More importantly, the calibrated TCAD simulations are obtained with determined TID model parameters (e.g., hole trap density and capture cross section) values that contain well quantified uncertainties. Furthermore, we can isolate and quantify the noises that are not captured by the TCAD models but exist in the measured data due to measurements and devices variabilities. Lastly, the calibrated surrogate models are used to develop physics-informed TID compact models. The method is generalizable to other devices and/or radiation conditions with few modifications and can provide well-determined uncertainties.
In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.
Metal–semiconductor contacts in silicon carbide (SiC) diodes endure damages at the interface when exposed to harsh radiation environments. Due to the rapid rise in temperature and ultrafast cooling that follows the radiation impact, the structural properties of the materials can be altered through melting, recrystallization, and amorphization. A detailed understanding of the material failure modes at the interface is lacking, specifically at the nanoscale. We use molecular simulations to investigate the ultrafast melting at tungsten (W)–SiC interfaces following radiation damage and apply deep learning techniques to track the transient evolution of the local molecular structures. We show that W near the radiation track undergoes melting and, eventually, most of it recrystallizes with a noticeable degree of undercooling, while SiC is rendered permanently amorphous. The observation of local undercooling in W films is important as it can affect the device performance even before the bulk melting temperature of the material is reached. We also show that at high temperatures, the interface undergoes a fracture-like failure. The results presented here are significant in understating the different failure modes of SiC diode materials.
The next high-current Electron Ion Collider (EIC) is a new accelerator to be built at Brookhaven National Laboratory (BNL) in collaboration with Thomas Jefferson National Accelerator Facility (TJNAF). In the EIC Electron Storage Ring (ESR), there will be beam currents up to 2.5 A, which will excite massive Higher-Order-Modes (HOM) power in the 17 single-cell 591 MHz Superconducting Radio Frequency (SRF) cavities. To damp the HOM power in the ESR SRF cavities is a challenge. A room temperature cylindrical shell shape Silicon Carbide (SiC) Beamline HOM Absorber (BLA) was chosen as the baseline design, due to its broadband and high-power capability, and previous demonstrations at other accelerator facilities, albeit at much lower power. Because the EIC BLA HOM power dissipation is significantly greater than the previous applications, it is imperative to carry out high power testing to determine the maximum device performance levels achievable for thermal transport, RF breakdown, and mechanical stress, prior to finalizing the design. A SiC HOM absorber with state-of-the-art geometry size was prototyped to verify shrink-fit technique, test outgassing rate, and high power handling capability. This paper presents the HOM damper’s prototyping and test results.
This paper presents a loss-optimized Triple Phase-Shift (TPS) switching strategy for Dual-Active Bridge (DAB) based converters. The proposed strategy considers minimizing total converter loss with respect to minimizing device rms cur-rents, enabling Zero-Voltage Switching (ZVS) turn-on of devices and accurate control of device turn-off current. A model for switching currents is presented, followed by a loss model and optimization strategy. A 1.3kV/100kW prototype based on SiC MOSFETs was used in this work and experimental results up to 10kW show the proposed TPS strategy to be more efficient for operation.
The next high-current Electron-Ion Collider (EIC) is a new accelerator to be built at Brookhaven National Laboratory in collaboration with Thomas Jefferson National Accelerator Facility. In the EIC Electron Storage Ring (ESR), there will be beam currents of up to 2.5 A, which will excite massive higher-order-mode (HOM) power in the 17 single-cell 591 MHz superconducting radio-frequency (SRF) cavities. Damping the HOM power in the ESR SRF cavities is a challenge. A room temperature cylindrical shell shape silicon carbide (SiC) beamline HOM absorber (BLA) was chosen as the baseline design, due to its broadband and high-power capability, and previous demonstrations at other accelerator facilities, albeit at much lower power. Because the EIC BLA HOM power dissipation is significantly greater than the previous applications, it is imperative to carry out high-power testing to determine the maximum device performance levels achievable for thermal transport, rf breakdown, and mechanical stress, prior to finalizing the design. A SiC HOM absorber with a state-of-the-art geometry size was prototyped to verify the shrink-fit technique, test outgassing rate, and high-power handling capability. This paper presents the HOM damper’s prototyping and test results. Published by the American Physical Society 2024
—The switching performance of large area (1cm x 1cm) monolithic 1.2 kV 50 mΩ 4H-SiC bidirectional field effect transistor (BiDFET) with integrated JBS diodes is reported for the first time. The devices were fabricated in a 6-inch commercial foundry and then packaged in a custom-designed four-terminal module. The switching performance of the BiDFET has been observed to be 1.4x better than that of its internal JBSFETs. Dynamic characterization was performed at 800 V with different gate resistances, current levels and case temperatures. An increase in switching losses was observed for the BiDFET with increasing gate resistance and current level as observed for SiC power MOSFETs. The BiDFET showed a 9% reduction in total switching loss from 25 °C to 150 °C with a current of 10 A.
A new approach to atomic layer etching (ALE) has been demonstrated, and its application to 4H-SiC is reported here. By pulsing only the DC bias for an Ar/Cl2 inductively coupled plasma-reactive ion etching system, the etch cycle duration is reduced by more than an order of magnitude relative to conventional ALE processes. Gas flows are not changed throughout the ALE process. With this process protocol, we achieved an etch rate of 2.48±0.09 Å/cycle with 6 s cycles, an RMS surface roughness (Rq) of 0.83±0.08 Å, and an ALE synergy value of S = 99%. The parameters explored within this ALE process demonstrate effective subangstrom smoothening of 4H-SiC surfaces and is well-suited for a variety of classical and quantum device nanofabrication.
This Final Technical Report (FTR) summarizes the work conducted at the Center for Power Electronics Systems (CPES) under the Wide-Bandgap Generation (WBGen) fellowship and traineeship program established by the Advanced Manufacturing and Technologies Office (AMMTO) of the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy (EERE) at Virginia Tech, which had as main objective to train the next generation of U.S. citizen power engineers with wide-bandgap (WBG) power semiconductor expertise, with the intent to aid in fulfilling the future workforce needs in this field. The latter was deemed of strategic importance given the fast-paced growth observed—and predicted—in the demand of this technical expertise, whose practitioners have become the enablers and executioners of the electrification transformation process that not just the U.S., but the whole world, is currently undergoing as it seeks for more effective and efficient ways to use energy. As such, the WBGen program set forth to achieve its educational goals, which in addition sought to broaden the range of WBG-based power electronics by conducting research and development on high-efficiency grid apparatus and high-efficiency electrical power systems, and to also enhance the power engineering curriculum by formalizing WBG-oriented design procedures replacing existent yet now obsolete design procedures developed for Silicon (Si) based power electronics. This effort led CPES to spearhead the development of a new major within The Bradley Electrical and Computer Engineering (ECE) Department at Virginia Tech, namely Electronic Power and Energy Systems (EPES), which coalesced power electronics and power systems courses to provide undergraduate students with a strong formation in the power engineering field, while creating a pipeline of graduate students that could pursue the WBG-based curriculum and conduct research at CPES. In all, in what is considered a true success, eight of the twenty WBGen fellows that graduated program were recruited from the ECE department undergraduate cohort. The traineeship emphasized as well, from its beginning, the partnership with industry and national laboratories, which took advantage of the successful industry consortium at CPES that has historically been formed by 80–90 power and energy companies working in close collaboration with the center. This gave WBGen fellows the accessibility and possibility to conduct internships at partner facilities during the summer months, focused solely on the evaluation, testing, and adoption of WBG devices, which were many times tightly related to their respective research work and plans. In addition, WBGen fellows conducted their main research work within the confines of research programs at CPES conducted with these industry partners, providing them with a unique opportunity to develop not just their technical expertise—while advancing their knowledge, but to also learn and practice a slew of skills needed for their professional growth. As such, the fellows tackled a variety of WBG-related research topics, from device reliability and capability aspects as well as packaging and integration, encompassing the use of advanced materials and new structures, current sharing challenges, and insulation systems, to advanced gate-drivers with integrated sensors and protection mechanisms and active current- and voltage-based control, to optimized layouts seeking to maximize the switching and power processing performance of these devices, to power processing solutions adopting Gallium-Nitride (GaN) and Silicon-Carbide (SiC) power semiconductors for a variety of applications; including radiation-hardened converters for space dc distribution systems, direct three-phase ac-to-ac power converters for aerospace systems, dc-ac inverters for automotive traction drives, high-frequency isolated dc-dc battery chargers also for heavy transportation systems, and medium-voltage dc-dc and dc-ac converters for distribution systems and future power grids. The WBGen program ultimately graduated a total of 20 power engineers, all experts on WBG-based power electronics, awarding 18 M.S. and 2 PhD degrees in the process. These fellows, all U.S. citizens, allowed CPES to increase the number of citizens students to 33 % at the peak of the program, as the traineeship made possible the recruitment of talent with more attractive graduate research assistantship (GRA) contracts. Unfortunately, the present U.S. citizen enrollment at CPES has declined back to historic levels—approximately 10 %, as the regular GRA rates are not competitive enough when compared with entry-level industry jobs. In all, WBGen fellows published a total of 7 peer-reviewed journal articles, 44 papers at international technical conferences, made 42 presentations at international technical conferences, and filed 4 invention disclosures and patent applications, which have since then been granted by the U.S. Patent and Trademark Office (USPTO). Their contribution to CPES, Virginia Tech, the United States, and the world, has been significant, and continues to yield results thanks to the exemplary career that the fellows have initiated at many of the partners of the program, which include Wolfspeed, Raytheon Technologies, Infineon, Lockheed Martin, Dominion Energy, Northrop Grumman, Rivian, Aerospace Corporation, Sandia National Laboratory, National Renewable Energy Laboratory, John Hopkins University, and Virginia Tech.
This paper reports the successful synthesis of true two-dimensional silicon carbide using a top-down synthesis approach. Theoretical studies have predicted that 2D SiC has a stable planar structure and is a direct band gap semiconducting material. Experimentally, however, the growth of 2D SiC has challenged scientists for decades because bulk silicon carbide is not a van der Waals layered material. Adjacent atoms of SiC bond together via covalent sp3 hybridization, which is much stronger than van der Waals bonding in layered materials. Additionally, bulk SiC exists in more than 250 polytypes, further complicating the synthesis process, and making the selection of the SiC precursor polytype extremely important. This work demonstrates, for the first time, the successful isolation of 2D SiC from hexagonal SiC via a wet exfoliation method. Unlike many other 2D materials such as silicene that suffer from environmental instability, the created 2D SiC nanosheets are environmentally stable, and show no sign of degradation. 2D SiC also shows interesting Raman behavior, different from that of the bulk SiC. Our results suggest a strong correlation between the thickness of the nanosheets and the intensity of the longitudinal optical (LO) Raman mode. Furthermore, the created 2D SiC shows visible-light emission, indicating its potential applications for light-emitting devices and integrated microelectronics circuits. We anticipate that this work will cause disruptive impact across various technological fields, ranging from optoelectronics and spintronics to electronics and energy applications.