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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Thermal fatigue behavior of H-13 die steel for aluminum die casting with various ion sputtered coatings

Sputtered coatings of Mo, W, Pt, Ag, Au, Co, Cr, Ni, Ag + Cu, Mo + Pt, Si3N4, A1N, Cr3C2, Ta5Si3, and ZrO2 were applied to a 2-inch-square, 7-inch-long thermal fatigue test specimen which was then internally water cooled and alternately immersed in molten aluminum and cooled in air. After 15,000 cycles the thermal fatigue cracks at the specimen corners were measured. Results indicate that a significant improvement in thermal fatigue resistance was obtained with platinum, molybdenum, and tungsten coatings. Metallographic examination indicates that the improvement in thermal fatigue resistance resulted from protection of the surface of the die steel from oxidation. The high yield strength and ductility of molybdenum and tungsten contributed to the better thermal fatigue resistance.

Nieh, C. Y.↗
NASA NTRS1981

Development of technique for AR coating and nickel and copper metallization of solar cells: FPS project, product development

Silicon nitride and nickel pastes are investigated in conjunction with a brush copper plating process for the purpose of identifying one or more fabrication sequences which yield at least 10 percent efficient N(+)/P(+) flat plate solar cells. The adhesion of all nickel pastes is reduced significantly when subjected to acidic and alkaline brush copper plating solutions as a result of a combination of thermally induced stress and chemical attack of the frit, which occurs at the interface with the silicon solar cell. The AgF is penetrating the 800 a of Si3N4 and ohmic contact is occurring at all fire-in tempertures. During the brush plating process, fingers and buss bars tend to spread.

Rominger, C. G.↗
NASA NTRS1981

Nitridation of silicon

Silicon powders with three levels of impurities, principally Fe, were sintered in He or H2. Non-densifying mechanisms of material transport were dominant in all cases. High purity Si showed coarsening in He while particle growth was suppressed in H2. Lower purity powder coarsened in both He and H2. The same three Si powders and Si /111/ single crystal wafers were nitrided in both N2 and N2/H2 atmospheres. Hydrogen increased the degree of nitridation of all three powders and the alpha/beta ratio of the lower purity powder. Some Si3N4 whiskers and open channels through the surface nitride layer were observed in the presence of Fe, correlating with the nitridation-enhancing effects of Fe. Thermodynamic calculations showed that when SiO2 is present on the Si, addition of H2 to the nitriding atmosphere decreases the amount of SiO2 and increases the partial pressure of Si-containing vapor species, that is, Si and SiO. Large amounts of NH3 and SiH4 were also predicted to form.

Shaw, N. J.↗
NASA NTRS1981

Ion-beam-enhanced adhesion in the electronic stopping region

The use of ion beams in the electronic stopping region to improve the adhesion of insulators to other materials is described. In particular, the bonding of Au films to Teflon, ferrite, and SiO2 was improved by bombarding them with He and Cl, respectively. Improvements in bonding were also observed for Au on glass, Au and Cu on sapphire, and Si3N4 on Si. The mechanism is apparently associated with sputtering and track forming processes occurring in the electronic stopping region. Some applications are discussed.

Griffith, J. E.↗
NASA NTRS1982

Sputtered silicon nitride coatings for wear protection

Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.

Grill, A.↗
NASA NTRS1982

Laser materials processing facility

The laser materials processing facility and its capabilities are described. A CO2 laser with continuous wave, repetitive pulse, and shaped power-time cycles is employed. The laser heated crystal growth station was used to produce metal and metal oxide single crystals and for cutting and shaping experiments using Si3N4 to displace diamond shaping processes.

Haggerty, J. S.↗
NASA NTRS1982

Deposition of reactively ion beam sputtered silicon nitride coatings

An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

Grill, A.↗
NASA NTRS1981

Long term behavior of silicon germanium thermoelectric generators

Results of tests of the long term performance of SiGe radioisotope thermoelectric generators (RTG) are presented. Three modules were monitored for 17,000-32,300 hr at hot junction temperatures of 1,085, 1,055, and 1,000 C; coating the unicouples with a 12,000 A thick layer of Si3N4 protected the modules from Si sublimation. Output degraded less than 0.3-0.4%/1,000 hr over the testing period. Life tests on a multihundredwatt (MHW) SiGe generator with 312 couples at a hot shoe temperature of 1,040 C dealt with power of 150 W at 30 V, with 0.5%/1,000 hr performance degradation. Si deposition on the insulation was found to enhance electrical conductance until a saturation point was reached. Disassembly of a test module after 16,750 hr revealed a Mo build-up, SiN4 coating deterioration, and Ti diffustion from the hot shoe to cooler regions of the junction. The presence of an Al2O3 insulator was recognized as preventing coating loss. Performance records from the Voyager and Les-8 satellites' RTG's are compared and show similar, 0.25%/1,000 hr degradation rates; RTG storage is judged to be feasible and the tests lead to projections of a 600,000 hr lifetime for a SiGe RTG.

Shields, V.↗
NASA NTRS1982

Design and development of a ceramic radial turbine for the AGT101

An acceptable and feasible ceramic turbine wheel design has been achieved, and the relevant temperature, stress, and success probability analyses are discussed. The design is described, the materials selection presented, and the engine cycle conditions analysis parameters shown. Measured MOR four-point strengths are indicated for room and elevated temperatures, and engine conditions are analyzed for various cycle states, materials, power states, turbine inlet temperatures, and speeds. An advanced gas turbine ceramic turbine rotor thermal and stress model is developed, and cumulative probability of survival is shown for first and third-year properties of SiC and Si3N4 rotors under different operating conditions, computed for both blade and hub regions. Temperature and stress distributions for steady-state and worst-case shutdown transients are depicted.

Finger, D. G.↗
NASA NTRS1983

Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

Yajima, S.↗
NASA NTRS1983

Silicon nitride: A ceramic material with outstanding resistance to thermal shock and corrosion

The known physical, mechanical and chemical properties of reaction-sintered silicon nitride are summarized. This material deserves interest especially because of its unusually good resistance to thermal shock and corrosion at high temperatures. Two types are distinguished: reaction-sintered (porous) and hot-pressed (dense) Si3N4. Only the reaction-sintered material which is being produced today in large scale as crucibles, pipes, nozzles and tiles is considered.

Huebner, K. H.↗
NASA NTRS1983

Development of plane strain fracture toughness test for ceramics using Chevron notched specimens

Chevron-notched four-point-bend and short-bar specimens have been used to determine the fracture toughness of sintered aluminum oxide and hot-pressed silicon nitride ceramics. The fracture toughness for Si3N4 is found to be essentially independent of the specimen size and chevron notch configuration, with values ranging from 4.6 to 4.9 MNm exp -3/2. In contrast, significant specimen size and notch geometry effects have been observed for Al2O3, with the fracture toughness ranging from 3.1 to 4.7 MNm exp -3/2. These effects are attributed to a rising crack growth resistance curve for the Al2O3 tested.

Bubsey, R. T.↗
NASA NTRS1984

Oxidation resistance of silicon ceramics

Oxidation resistance, and examples of oxidation of SiC, Si3N4 and sialon are reviewed. A description is given of the oxidation mechanism, including the oxidation product, oxidation reaction and the bubble size. The oxidation reactions are represented graphically. An assessment is made of the oxidation process, and an oxidation example of silicon ceramics is given.

Yasutoshi, H.↗
NASA NTRS1984

Ceramic component development for the AGT101 gas turbine engine

Under DOE/NASA sponsorship, a team is developing the AGT101, a highly efficient gas turbine engine for automotive application. The regenerated engine will operate at a maximum of 1370 C (2500 F) and 100,000 rpm, and will utilize a variety of Si3N4, SiC, lithium aluminum silicate and ceramic fiber insulation components. Engine design has been performed to consider the fabrication and material characteristics of these ceramic materials for both the static and rotating hot section components. Component fabrication has been performed, components have been screened in thermal and mechanical tests, and initial engine testing has been performed.

Carruthers, W. D.↗
NASA NTRS1985

Tolerance bounds for log gamma regression models

The present procedure for finding lower confidence bounds for the quantiles of Weibull populations, on the basis of the solution of a quadratic equation, is more accurate than current Monte Carlo tables and extends to any location-scale family. It is shown that this method is accurate for all members of the log gamma(K) family, where K = 1/2 to infinity, and works well for censored data, while also extending to regression data. An even more accurate procedure involving an approximation to the Lawless (1982) conditional procedure, with numerical integrations whose tables are independent of the data, is also presented. These methods are applied to the case of failure strengths of ceramic specimens from each of three billets of Si3N4, which have undergone flexural strength testing.

Jones, R. A.↗
NASA NTRS1986

Etching Silicon Films With Xenon Difluoride

Microscopic circuit structures prepared for probing. Xenon difluoride removes relatively large amounts of silicon from integratedcircuit or solar-cell structures while leaving SiO2, Si3N4, Al2O3, and other compounds intact. In Etching Apparatus, solid XeF2 sublimated in vacuum, then allowed to flow over sample at controlled rate and pressure. Wafer etched from back to expose SiO2 and Al layers for spectroscopic analysis of SiO2/Al interface. Using XeF2 technique, silicon wafer with oxide layer reduced in thickness from standard 300 micrometer to as little as 10 nanometer without adversely affecting oxide.

Hecht, M. H.↗
NASA NTRS1985

Phenomenological study of the behavior of some silica formers in a high velocity jet fuel burner

Samples of four silica formers: single crystal SiC, sintered alpha-SiC, reaction sintered Si3N4 and polycrystalline MoSi2, were subjected to a Mach 1 jet fuel burner for 1 hr, at a sample temperature of 1375 deg C (2500 deg F). Two phenomena were identified which may be deleterious to a gas turbine application of these materials. The glass layer formed on the MoSi2 deformed appreciably under the aerodynamic load. A scale developed on the samples of the other materials which consisted of particular matter from the gas stream entrapped in a SiO2 matrix.

Cawley, J. D.↗
NASA NTRS1985

Manufacture of dense sintered bodies containing silicon nitride

Sintered bodies containing 1-32.5 Si oxide and 1.5 wt.% SiC (Si oxide/SiC wt. ratio 3/2) are prepared and kept in a 10-3000 kg/2 sq. cm. N (g) atmosphere at 1500-2300 degrees, while simultaneously maintaining the CO (g) partial pressure around the body lower than the nitrogenation equil. pressure to give a dense sintered body. The prepared dense sintered body has high strength at high temperatures. Thus, SiC 40, oxide 30 and Si3N4 30 wt% were fired to a body which was kept in 1500 kg/sq. cm. N (g) for 20 h at 2000 degrees to give a dense sintered body having high bending strength at high temperatures.

Hirota, K.↗