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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Conductive surge testing of circuits and systems

Techniques are given for conductive surge testing of powered electronic equipment. The correct definitions of common and normal mode are presented. Testing requires not only spike-surge generators with a suitable range of open-circuit voltage and short-circuit current waveshapes, but also appropriate means, termed couplers, for connecting test surges to the equipment under test. Key among coupler design considerations is minimization of fail positives resulting from reduction in delivered surge energy due to the coupler. Back-filters and the lines on which they are necessary, are considered as well as ground-fault and ground potential rise. A method for monitoring delivered and resulting surge waves is mentioned.

Richman, P.↗
NASA NTRS1983

Study of relationships of material properties and high efficiency solar cell performance on material composition

The performance improvements obtainable from extending the traditionally thin back-surface-field (BSF) layer deep into the base of silicon solar cells under terrestrial solar illumination (AM1) are analyzed. This extended BSF cell is also known as the back-drift-field cell. About 100 silicon cells were analyzed, each with a different emitter or base dopant impurity distribution whose selection was based on physically anticipated improvements. The four principal performance parameters (the open-circuit voltage, the short-circuit current, the fill factor, and the maximum efficiency) are computed using a FORTRAN program, called Circuit Technique for Semiconductor-device Analysis, CTSA, which numerically solves the six Shockley Equations under AM1 solar illumination at 88.92 mW/cm, at an optimum cell thickness of 50 um. The results show that very significant performance improvements can be realized by extending the BSF layer thickness from 2 um (18% efficiency) to 40 um (20% efficiency).

Sah, C. T.↗
NASA NTRS1984

The ac power line protection for an IEEE 587 Class B environment

The 587B series of protectors are unique, low clamping voltage transient suppressors to protect ac-powered equipment from the 6000V peak open-circuit voltage and 3000A short circuit current as defined in IEEE standard 587 for Category B transients. The devices, which incorporate multiple-stage solid-state protector components, were specifically designed to operate under multiple exposures to maximum threat levels in this severe environment. The output voltage peaks are limited to 350V under maximum threat conditions for a 120V ac power line, thus providing adequate protection to vulnerable electronic equipment. The principle of operation and test performance data is discussed.

Roehr, W. D.↗
NASA NTRS1987

Improving Solar Cells With Polycrystalline Silicon

In proposed solar-cell design, layers of polycrystalline silicon grown near front metal grid and back metal surface. Net electrical effect increases open-circuit voltage and short-circuit current, resulting in greater cell power output and energy conversion efficiency. Solar-cell configuration differs from existing one in that layers of doped polycrystalline silicon added to reduce recombination in emitter and back surface field regions.

Rohatgi, Ajeet↗
NASA NTRS1994

Design and application of electromechanical actuators for deep space missions

This progress report documents research and development efforts performed from August 16, 1993 through February 15, 1994 on NASA Grant NAG8-240, 'Design and Application of Electromechanical Actuators for Deep Space Missions.' Following the executive summary are four report sections: Motor Selection, Tests Stand Development, Health Monitoring and Fault Management, and Experiment Planning. Three specific motor types have been considered as prime movers for TVC EMA applications: the brushless dc motor, the permanent magnet synchronous motor, and the induction motor. The fundamental finding was that, in general, the primary performance issues were energy efficiency and thermal dissipation (rotor heating). In terms of all other issues, the three motor types were found to compare quite equally. Among the design changes made to the test stand since the last progress report is the addition of more mounting holes in the side beams. These additional holes allow the movable end beam to be attached in a greater number of positions than previously. With this change the movable end beam can move from full forward to full back in three inch increments. Specific mathematical details on the approach that have been employed for health monitoring and fault management (HMFM) have been reported previously. This approach is based on and adaptive Kalman filter strategy. In general, a bank of filters can be implemented for each primary fault type. Presently under consideration for the brushless dc machine are the following faults: armature winding open-circuits, armature winding short-circuits (phase-to-phase and phase-to-ground), bearing degradation, and rotor flux weakening. The mechanically oriented experiments include transient loading experiments, transverse loading experiment, friction experiment, motor performance experiment, and HMFM experiment.

Haskew, Tim A.↗
NASA NTRS1995

InGaAs/InP solar cells for space application

The effects of irradiation of In(0.53)Ga(0.47)As/InP (InGaAs/InP) solar cells illuminated through a transparent InP substrate with 1 MeV electrons were measured. These solar cells were developed for bottom cells in tandem solar photovoltaic cell structures. Some InGaAs/InP heterostructures with four layers were grown by liquid phase epitaxy. The structure of the solar cells allowed lightly doped materials in n and p photoactive layers to be used. The base dopant levels ranged from 1.10(exp 17) to 5.10(exp 17) cm(exp -3). The open circuit voltage and the short circuit current were moderately degraded after irradiation with 10(exp 16) cm(exp-2) 1 MeV electrons. This behavior is explained in terms of the device structure and the n and p layer thicknesses.

Karlina, L. B.↗
NASA NTRS2002

Performance and Safety Tests on Samsung 18650 Li-ion Cells: Two Cell Designs

In order to meet the applications for space shuttle in future, two types of Samsung cells, with capacity 1800 mAh and 2000 mAh, have been investigated. The studies focused on: (1) Performance tests: completed 250 cycles at various combinations of charge/discharge C rates and discharge capacity measurements at various temperatures; and (2) Safety tests: overcharge and overdischarge, heat abuse, short circuit, internal and external short, and vibration, vacuum, and drop tests

Deng, Yi↗
NASA NTRS2002

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Ringel, S. A.↗
DOE OSTI2023

Organic photovoltaic cells and non-fullerene acceptors thereof

Organic photovoltaic cells (OPVs) and their compositions are described herein. In one or more embodiments, the acceptor with an active layer of an OPV includes is a non-fullerene acceptor. Such non-fullerene acceptors may provide improved OPV performance characteristics such as improved power conversion efficiency, open circuit voltage, fill factor, short circuit current, and/or external quantum efficiency. One example of a non-fullerene acceptor is (4,4,10,10-tetrakis(4-hexylphenyl)-5,11-(2-ethylhexyloxy)-4,10-dihydro-dithienyl[1,2-b:4,5b′] benzodi-thiophene-2,8-diyl) bis(2-(3-oxo-2,3-dihydroinden-5,6-dichloro-1-ylidene) malononitrile.

Forrest, Stephen R.↗
NASA NTRS1990

Tester Detects Steady-Short Or Intermittent-Open Circuits

Momentary open circuits or steady short circuits trigger buzzer. Simple, portable, lightweight testing circuit sounds long-duration alarm when it detects steady short circuit or momentary open circuit in coaxial cable or other two-conductor transmission line. Tester sensitive to discontinuities lasting 10 microseconds or longer. Used extensively for detecting intermittent open shorts in accelerometer and extensometer cables. Also used as ordinary buzzer-type continuity checker to detect steady short or open circuits.

Anderson, Bobby L.↗
DOE OSTI2020

Behavior of Na and RbF-Treated CdS/Cu(In,Ga)Se 2 Solar Cells with Stress Testing under Heat, Light, and Junction Bias

In this work, the effects of Na and RbF alkali treatment on the metastability behavior of CdS/Cu(In,Ga)Se 2 solar cells are investigated with stress factors of heat, junction bias, and illumination. Four device types with and without Na or RbF treatments are subjected to heat- and light-soaking under open- and short-circuit (OC, SC) junction bias. Low-Na devices show a higher bandgap due to increased minimum Ga content, higher recombination current, and lower open-circuit voltage (V OC ). Devices with RbF post-deposition treatment (PDT) show an improvement in net doping density ≈10 16 cm –3 , V OC , and efficiency. Heat- and light-soaking under OC junction bias provokes an increase in net carrier concentration and V OC irrespective of the alkali treatments. After SC stress, a decrease in V OC and net carrier concentration is observed, which can be stabilized by RbF-PDT. An increase in Na and oxygen concentration in CIGS is observed for baseline and low-Na devices, respectively, after OC stress. The oxygen concentration in CdS decreases after heat- and light-soaking for devices without RbF-PDT, whereas it remains unchanged for devices with RbF-PDT. The atomic concentration profiles in CIGS significantly stabilize as a function of stress with the addition of RbF-PDT.

14 SOLAR ENERGY↗
NASA NTRS1971

Status of power generation experiments in the NASA Lewis closed cycle MHD facility

The design and operation of the closed cycle MHD facility is discussed and results obtained in recent experiments are presented. The main components of the facility are a compressor, recuperative heat exchanger, heater, nozzle, MHD channel with 28 pairs of thoriated tungsten electrodes, cesium condenser, and an argon cooler. The facility has been operated at temperatures up to 2100 K with a cesium-seeded argon working fluid. At low magnetic field strengths, the open circuit voltage, Hall voltage and short circuit current obtained are 90, 69, and 47 percent of the theoretical equilibrium values, respectively. Comparison of this data with a wall and boundary layer leakage theory indicates that the generator has shorting paths in the Hall direction.

Sovie, R. J.↗
DOE OSTI2023

Fine‐Tuning Alkyl Chains on Quinoxaline Nonfullerene Acceptors Enables High‐Efficiency Ternary Organic Solar Cells with Optimizing Molecular Stacking and Reducing Energy Loss

Abstract Material design of guest acceptor is always a big challenge for improving the efficiency of ternary organic solar cells (OSCs). Here, a pair of isomeric nonfullerene acceptors based on quinoxaline core, Qx–p‐C 7 H 8 O and Qx–m‐C 7 H 8 O, is designed and synthesized. By moving the alkoxy chain attached on side phenyl frommeta‐position topara‐position, both π–π stacking distance and crystallinity are enhanced simultaneously. They obtain the uplifted lowest unoccupied molecular orbital level. Compared to Qx–m‐C 7 H 8 O, Qx–p‐C 7 H 8 O exhibits wider absorption spectrum and higher extinction coefficient. Using D18‐Cl:N3 as host materials, the addition of guest acceptor Qx–p‐C 7 H 8 O significantly improves the power conversion efficiency (PCE) from 17.61% to 18.49% because of higher open‐circuit voltage (0.875 V) and short‐circuit current density (27.85 mA cm −2 ). This can be attributed to the faster exciton dissociation, more balanced carrier mobility, fine fiber morphology, and lower energy loss in the ternary devices. However, Qx–m‐C 7 H 8 O‐based ternary device achieves relatively low PCE of 17.17% because this device shows extremely low electron mobility. The results indicate that molecular stacking, film morphology, etc., can be effectively modulated by fine‐tuning the side chains of guest materials, which may be an effective design rule for further improving the PCE of OSCs.

Chemistry↗
DOE OSTI2023

Unidirectional Sidechain Engineering to Construct Dual‐Asymmetric Acceptors for 19.23 % Efficiency Organic Solar Cells with Low Energy Loss and Efficient Charge Transfer

Abstract Achieving both high open‐circuit voltage ( V oc ) and short‐circuit current density ( J sc ) to boost power‐conversion efficiency (PCE) is a major challenge for organic solar cells (OSCs), wherein high energy loss ( E loss ) and inefficient charge transfer usually take place. Here, three new Y‐series acceptors of mono‐asymmetric asy‐YC11 and dual‐asymmetric bi‐asy‐YC9 and bi‐asy‐YC12 are developed. They share the same asymmetric D 1 AD 2 (D 1 =thieno[3,2‐ b ]thiophene and D 2 =selenopheno[3,2‐ b ]thiophene) fused‐core but have different unidirectional sidechain on D 1 side, allowing fine‐tuned molecular properties, such as intermolecular interaction, packing pattern, and crystallinity. Among the binary blends, the PM6 : bi‐asy‐YC12 one has better morphology with appropriate phase separation and higher order packing than the PM6 : asy‐YC9 and PM6 : bi‐asy‐YC11 ones. Therefore, the PM6 : bi‐asy‐YC12‐based OSCs offer a higher PCE of 17.16 % with both high V oc and J sc , due to the reduced E loss and efficient charge transfer properties. Inspired by the high V oc and strong NIR‐absorption, bi‐asy‐YC12 is introduced into efficient binary PM6 : L8‐BO to construct ternary OSCs. Thanks to the broadened absorption, optimized morphology, and furtherly minimized E loss , the PM6 : L8‐BO : bi‐asy‐YC12‐based OSCs achieve a champion PCE of 19.23 %, which is one of the highest efficiencies among these annealing‐free devices. Our developed unidirectional sidechain engineering for constructing bi‐asymmetric Y‐series acceptors provides an approach to boost PCE of OSCs.

Chemistry↗
DOE OSTI2022

Results from an international interlaboratory study on light‐ and elevated temperature‐induced degradation in solar modules

Abstract This paper reports the results of an international interlaboratory comparison study on light‐ and elevated temperature‐induced degradation (LETID) on crystalline silicon photovoltaic (PV) modules. A large global network of PV module manufacturers and PV testing laboratories collaborated to design a protocol for LETID detection and screen a large and diverse set of prototype modules for LETID. Results across labs indicate the reproducibility of LETID testing is likely within ±1% of maximum power (P MP ). In intentionally engineered LETID‐sensitive modules, mean degradation after the prescribed detection stress is roughly 6% P MP . In other module types the LETID sensitivity is smaller, and in some we observe essentially negligible degradation attributable to LETID. In LETID‐sensitive modules, both open‐circuit voltage (V OC ) and short‐circuit current (I SC ) degrade by a roughly similar magnitude. We observe, as do previous studies, that LETID affects each cell in a module differently. An investigation of the potential mismatch losses caused by nonuniform LETID degradation found that mismatch loss is insignificant compared to the estimated loss of cell I SC , which drives loss of module I SC . Overall, this work has helped inform the creation of a forthcoming standard technical specification for LETID testing of PV modules, IEC TS 63342 ED1, and should aid in the interpretation of results from that and other LETID tests.

14 SOLAR ENERGY↗
DOE OSTI2025

Direct writing of PVBVA/Ti 3 C 2 T x (MXene) triboelectric nanogenerators for energy harvesting and sensing applications

Triboelectric nanogenerators (TENGs) have gained recognition for their potential to convert mechanical energy into electrical energy, making them attractive for applications in healthcare, robotics, and human-device interfaces. However, many TENG devices rely on fluorinated polymers for high charge generation and involve complex fabrication processes, which limit their practicality and environmental sustainability. Here, we developed an eco-friendly composite of poly (vinyl butyral-co-vinyl alcohol-co-vinyl acetate) (PVBVA) and Ti 3 C 2 T x MXene for extrusion printing onto aluminum foil substrates, enabling the additive manufacturing of TENGs. Experimental results indicate that integrating 5.5 mg mL -1 of MXene (P-MX 5.5) into PVBVA resulted in a power density of 760 mW·m -2 , with simultaneous improvements in open-circuit voltage (129 %) and short-circuit current (250 %), demonstrating enhanced charge transfer efficiency. Beyond aluminum foil-based devices, we further explored the fully printed P-MX 5.5 TENG by utilizing silver ink electrodes, eliminating the need for aluminum foil. This fully printed, flexible TENG was successfully used for real-time human motion sensing, demonstrating its ability to detect activities such as walking, running, knee bending, and jumping. Collectively, our additively manufactured and sustainable PVBVA-MXene TENG composites, including both aluminum-based and fully printed versions, show promise for future energy harvesters, sensors, wearable electronics, healthcare, and robotic applications.

Additive manufacturing↗
DOE OSTI2022

Significant improvement of conversion efficiency by passivation of low-angle grain boundaries in flexible low-cost single-crystal-like GaAs thin-film solar cells directly deposited on metal tape

We develop an easily implementable yet effective process to achieve high power conversion efficiency in newly-developed flexible single-crystal-like GaAs thin-film photovoltaic solar cells on cheap metal tape. We study various techniques on the fabricated devices to passivate the defect states associated with dangling bonds at low-angle grain boundaries (LA-GBs) existing in the single-crystal-like GaAs material. We report that sulfur by trioctylphosphine sulfide (TOP:S) solution treatment can partially but effectively passivate the defect states at the LA-GBs to increase all the solar cell performance parameters of open-circuit voltage VOC (33.2%), short-circuit current JSC (19.5%), and fill factor FF (25.8%), resulting in the improvement of the power conversion efficiency more than double. The material and device characterizations and numerical modeling are performed to propose a mechanism, also suggesting that the power conversion efficiency higher than 20%, which is an important target milestone in emerging solar cell technologies, can be achieved. This work presents the first effective passivation of the bulk defects in GaAs at the device level and can also offer a solution for other photonic and electronic devices using non-single-crystalline GaAs films for flexible electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Perovskite Solar Cells with Enhanced Fill Factors Using Polymer-Capped Solvent Annealing

Despite huge improvements in power conversion efficiencies of perovskite solar cells, the technology is still limited by fill factors at around 80%. In this work, we report perovskite solar cells having exceptionally high fill factors of 85% and enhanced open-circuit voltage without sacrificing short-circuit current through a polymer-capped solvent-annealing process assisted by a hot air blower. Additionally, during the solvent-annealing, the perovskite surface flattens and the perovskite grains agglomerate into micrometer-sized clusters having enlarged α-phase crystallites, while the δ-phase simultaneously disappears. The optimized structure reduces energetic disorder and trap-assisted recombination in the perovskite layer, resulting in an enhanced efficiency from 18.2% to 19.8% and improved device lifetime. Our results provide a pathway to increase the device efficiency and stability of perovskite solar cells, and have the potential to stimulate research on scalable poly-crystal perovskite layer fabrication in optoelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗