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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16

All sources NASA NTRS DOE OSTI

NASA NTRS1975

Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells

Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

Chen, L. Y.↗

NASA NTRS1980

Theory of extrinsic and intrinsic heterojunctions in thermal equilibrium

A careful analysis of an abrupt heterojunction consisting of two distinct semiconductors either intrinsic or extrinsic is presented. The calculations apply to a one-dimensional, nondegenerate structure. Taking into account all appropriate boundary conditions, it is shown that the intrinsic Fermi level shows a discontinuity at the interface between the two materials which leads to a discontinuity of the valence band edge equal to the difference in the band gap energies of the two materials. The conduction band edge stays continuous however. This result is independent of possible charged interface states and in sharp contrast to the Anderson model. The reasons for this discrepancy are discussed.

Von Ross, O.↗

NASA NTRS1982

Advanced Czochralski silicon growth technology for photovoltaic modules

Several economic analyses had indicated that large-diameter, multiple ingot growth using a single crucible with melt replenishment would be required for Cz growth to be economically viable. Based on the results of these analyses, two liquid and two solid feed melt replenishment approaches were initiated. The sequential solid feed melt replenishment approach, which demonstrated elements of technical feasibility is described in detail in this paper. Growth results of multiple ingots (10-cm-diameter, totaling 100 kg; and 15-cm-diameter, totaling 150 kg weight per crucible) are presented. Solar cells were fabricated and analyzed to evaluate the effects of structure and chemical purities as a result of multiple growth. The results indicate that, with semiconductor-grade silicon, feedstock impurity build-up does not seem to degrade cell performance. For polycrystalline cells, the average efficiencies are 15 to 25% lower than those of single crystalline cells. Concerns regarding single crystal yields, crucible quality and growth speed are indicated, and present status and future research thrusts are also discussed.

Daud, T.↗

NASA NTRS1982

Quantum-chemical modeling of smectite clays

A self-consistent charge extended Hueckel program is used in modeling isomorphic substitution of Al(3+) by Na(+), K(+), Mg(2+), Fe(2+), and Fe(3+) in the octahedral layer of a dioctahedral smectite clay, such as montmorillonite. Upon comparison of the energies involved in the isomorphic substitution, it is found that the order for successful substitution is as follows: Al(3+), Fe(3+), Mg(2+), Fe(2+), Na(+), which is equivalent to Ca(2+), and then K(+). This ordering is found to be consistent with experimental observation. The calculations also make it possible to determine the possible penetration of metal ions into the clay's 2:1 crystalline layer. For the cases studied, this type of penetration can occur at elevated temperatures into regions where isomorphic substitution has occurred with metal ions that bear a formal charge of less than 3+. The computed behavior of the electronic structure in the presence of isomorphic substitution is found to be similar to behavior associated with semiconductors.

Aronowitz, S.↗

NASA NTRS1983

Latchup in CMOS devices from heavy ions

It is noted that complementary metal oxide semiconductor (CMOS) microcircuits are inherently latchup prone. The four-layer n-p-n-p structures formed from the parasitic pnp and npn transistors make up a silicon controlled rectifier. If properly biased, this rectifier may be triggered 'ON' by electrical transients, ionizing radiation, or a single heavy ion. This latchup phenomenon might lead to a loss of functionality or device burnout. Results are presented from tests on 19 different device types from six manufacturers which investigate their latchup sensitivity with argon and krypton beams. The parasitic npnp paths are identified in general, and a qualitative rationale is given for latchup susceptibility, along with a latchup cross section for each type of device. Also presented is the correlation between bit-flip sensitivity and latchup susceptibility.

Soliman, K.↗

NASA NTRS2006

Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same

A single source precursor for depositing ternary I-III-VI.sub.2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI.sub.2 stoichiometry built into a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VI.sub.2 ternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500.degree. C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.

Banger, Kulbinder K.↗

NASA NTRS2009

Mo(3)Sb(7-x)Te(x) for Thermoelectric Power Generation

Compounds having compositions of Mo(3)Sb(7-x)Te(x) (where x = 1.5 or 1.6) have been investigated as candidate thermoelectric materials. These compounds are members of a class of semiconductors that includes previously known thermoelectric materials. All of these compounds have complex crystalline and electronic structures. Through selection of chemical compositions and processing conditions, it may be possible to alter the structures to enhance or optimize thermoelectric properties.

Snyder, G. Jeffrey↗

NASA NTRS2003

Transport Equations for CAD Modeling of Al(x)Ga(1-x)N/GaN HEMTs

BEMTs formed from Al(x)Ga(1-x)N/GaN heterostructures are being investigated for high RF power and efficiency around the world by many groups, both academic and industrial. In these devices, the 2DEG formation is dominated by both spontaneous and piezoelectric polarization fields, with each component having nearly the same order of magnitude. The piezoelectric portion is induced by the mechanical strain in the structure, and to analyze these devices, one must incorporate the stress/strain relationships, along with the standard semiconductor transport equations. These equations for Wurtzite GaN are not easily found in the open literature, hence this paper summarizes them, along with the constitutive equations for piezoelectric materials. The equations are cast into the format for the Wurtzite crystal class, which is the most common way GaN is grown epitaxially.

Freeman, Jon C.↗

NASA NTRS1986

Analysis of optically controlled microwave/millimeter wave device structures

The light-induced voltage and the change in the source-to-drain channel current under optical illumination higher than the semiconductor bandgap for GaAs MESFET, InP MESFET, Al0.3Ga0.7As/GaAs high electron mobility transistor (HEMT) and GaAs permeable base transistor (PBT) were analytically obtained. The GaAs PBT and GaAs MESFET have much higher sensitivity than InP MESFET. The Al0.3Ga0.7As/GaAs HEMT is observed to have the highest sensitivity. Variation in device parasitics due to optical illumination and its effect on the cutoff frequencies f sub T and f sub max are also investigated.

Simons, R. N.↗

NASA NTRS1986

Analysis of optically controlled microwave/millimeter-wave device structures

Simons, Rainee N.↗

NASA NTRS1986

Phase-Locked Laser Array With Nonuniform Spacing

To obtain phase-locked array that reliably produces single far-field lobe, configuration includes lasing stripes not placed on regular centers but located in regular way with nonuniform centers (i.e., with spacing determined by some function). Alternatively, lasing stripes placed on set of periodic arrays with different stripe-to-stripe centers interlaced onto single chip or placed in structure in which stripe-to-stripe spacing is random or pseudorandom. Monolithic, phase-locked, semiconductor-laser array design produces output laser beam comprising substantially single lobe.

Ackley, D. E.↗

NASA NTRS1990

Evolution and advanced technology

The NASREM architecture with its standard interfaces permits development and evolution of the Flight Telerobotic Servicer to greater autonomy. Technologies in control strategies for an arm with seven DOF, including a safety system containing skin sensors for obstacle avoidance, are being developed. Planning and robotic execution software includes symbolic task planning, world model data bases, and path planning algorithms. Research over the last five years has led to the development of laser scanning and ranging systems, which use coherent semiconductor laser diodes for short range sensing. The possibility of using a robot to autonomously assemble space structures is being investigated. A control framework compatible with NASREM is being developed that allows direct global control of the manipulator. Researchers are developing systems that permit an operator to quickly reconfigure the telerobot to do new tasks safely.

Ollendorf, Stanford↗

NASA NTRS1990

End-of-fabrication CMOS process monitor

A set of test 'modules' for verifying the quality of a complementary metal oxide semiconductor (CMOS) process at the end of the wafer fabrication is documented. By electrical testing of specific structures, over thirty parameters are collected characterizing interconnects, dielectrics, contacts, transistors, and inverters. Each test module contains a specification of its purpose, the layout of the test structure, the test procedures, the data reduction algorithms, and exemplary results obtained from 3-, 2-, or 1.6-micrometer CMOS/bulk processes. The document is intended to establish standard process qualification procedures for Application Specific Integrated Circuits (ASIC's).

Buehler, M. G.↗

NASA NTRS1993

The development of hydrogen sensor technology at NASA Lewis Research Center

The detection of hydrogen leaks in aerospace applications, especially those involving hydrogen fuel propulsion systems, is of extreme importance for reasons of reliability, safety, and economy. Motivated by leaks occurring in liquid hydrogen lines supplying the main engine of the Space Shuttle, NASA Lewis has initiated a program to develop point-contact hydrogen sensors which address the needs of aerospace applications. Several different approaches are being explored. They include the fabrication of PdAg Schottky diode structures, the characterization of PdCr as a hydrogen sensitive alloy, and the use of SiC as a semiconductor for hydrogen sensors. This paper discusses the motivation behind and present status of each of the major components of the NASA LeRC hydrogen sensor program.

Hunter, Gary W.↗

NASA NTRS1996

Using BEEM To Probe Strains In Semiconductors

Ballistic-electron-emission microscopy (BEEM) useful in determining strains in semiconductors under some conditions. More specifically, BEEM is variant of scanning tunneling microscopy and sensitive to electronic structure of probed material. In present approach, BEEM used to obtain data on those aspects of variations in electronic structures related to variations in strains. Then by use of mathematical modeling of relationships between electronic structures and strains, variations in strains deduced from BEEM data.

Bell, L. Douglas↗

NASA NTRS1990

Solid State Laser

The Titan-CW Ti:sapphire (titanium-doped sapphire) tunable laser is an innovation in solid-state laser technology jointly developed by the Research and Solid State Laser Divisions of Schwartz Electro-optics, Inc. (SEO). SEO is producing the laser for the commercial market, an outgrowth of a program sponsored by Langley Research Center to develop Ti:sapphire technology for space use. SEO's Titan-CW series of Ti:sapphire tunable lasers have applicability in analytical equipment designed for qualitative analysis of carbohydrates and proteins, structural analysis of water, starch/sugar analyses, and measurements of salt in meat. Further applications are expected in semiconductor manufacture, in medicine for diagnosis and therapy, and in biochemistry.

Source record↗

NASA NTRS1990

Synthesis and structures of metal chalcogenide precursors

The reactivity of early transition metal sandwich complexes with sulfur-rich molecules such as dithiocarboxylic acids was studied. Researchers recently initiated work on precursors to CuInSe2 and related chalcopyrite semiconductors. Th every high radiation tolerance and the high absorption coefficient of CuInSe2 makes this material extremely attractive for lightweight space solar cells. Their general approach in early transition metal chemistry, the reaction of low-valent metal complexes or metal powders with sulfur and selenium rich compounds, was extended to the synthesis of chalcopyrite precursors. Here, the researchers describe synthesis, structures, and and routes to single molecule precursors to metal chalcogenides.

Hepp, Aloysius F.↗

NASA NTRS1982

Electronic beam steering of semiconductor injection lasers

A theoretical analysis of the problem of beam steering is presented. The required modifications of the dielectric constant profile of the laser structure were derived. A practical method for implementing the needed modifications is outlined.

Katz, J.↗