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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The development of mid-IR III-V semiconductor diode lasers is briefly reviewed. Particularly, the recent progress and current status of Sb-based type-II interband cascade lasers are presented.
Balistic-electron-emission microscopy has developed from its beginning as a probe of Schottky barriers into a powerful nanometer-scale method for characterizing semiconductor interfaces and hot-electron transport.
Key issues are discussed that must be overcome in order to apply commercial semiconductor technologies in space, emphasizing ways to test and qualify devices so they meet radiation hardness requirements.
This paper provides a description of the reliability and qualification issues related to the application of compound semiconductor devices in critical space systems.
Useful light output of semiconductor diodes increased by incorporating the diode in an integral reflector and lens assembly. This reduces normal reflection losses between the diode and the air.
Photoelectric semiconductor switch with a buried emitter region avoids high-leakage currents across the emitter. it exhibits high emitter to collector transport efficiency beta at low signal levels.
High permeability semiconductors concentrate magnetic field energy in small areas to allow soldering of small components. This device can be used in microminiature parts in thin-film fabrication.
Impurity diffusion process produces precision silicon semiconductor junctions economically and fast. Oxide is deposited on a silicon wafer and a controlled concentration of impurity atoms in gaseous form is simultaneously introduced into the reaction.
Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapor-deposited in a controlled concentration gradient into a glass substrate to form the required junctions between vapor-deposited gold electrodes.
Exposure to high energy electron radiation reduces the temperature coefficients of resistance and gage factor of a range of resistivities of n- and p-type semiconductor silicon strain gages. After irradiation, the gages are heated to a high temperature for a 24-hour period to stabilize their temperature coefficients.
Semiconductor radiation dosimeter in the form of a slender probe is easily inserted into body tissue. The probe has a signal-to-noise ratio that is acceptable to recording equipment and provides realistic measurements of the spatial and energy distributions of radiant electrons and protons.
Oscilloscope, with specially developed test circuitry, quickly checks semiconductors without removing them from the circuitry. For transistors, approximate gain and linearity, as well as PNP or NPN determinations are made. When testing diodes, open or short circuits, and reverse polarity show up plainly.
Semiconductor cooler to induce hypothermia in small animals and experimental results for cooling anesthesized rats
Fast scanning IR microscope for semiconductor evaluation used for engineering design analysis, reliability improvement, failure analysis, etc
Status of ultratrace chemical analyses of materials for semiconductors was studied. This study covered atomic absorption spectroscopy, emission spectroscopy, and activation analyses. It makes recommendations to improve sensitivity, reliability and versatility for ultratrace chemical analysis.
New fundamental technique of reliability prediction for semiconductor diodes based on realistic mathematical models can be applied to component failure rate prediction including mechanical degradation, electrical degradation, environmental stress factors, and electrical load stress factors.
Semiconductor ac static power switch has long life and high reliability, contains no moving parts, and operates satisfactorily in severe environments, including high vibration and shock conditions. Due to their resistance to shock and vibration, static switches are used where accidental switching caused by mechanical vibration or shock cannot be tolerated.
Electrical and optical properties of amorphous thin film semiconductors