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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Gate drive latching circuit for an auxiliary resonant commutation circuit

A gate drive latching circuit for an auxiliary resonant commutation circuit for a power switching inverter includes a current monitor circuit providing a current signal to a pair of analog comparators to implement latching of one of a pair of auxiliary switching devices which are used to provide commutation current for commutating switching inverters in the circuit. Each of the pair of comparators feeds a latching circuit which responds to an active one of the comparators for latching the associated gate drive circuit for one of the pair of auxiliary commutating switches. An initial firing signal is applied to each of the commutating switches to gate each into conduction and the resulting current is monitored to determine current direction and therefore the one of the switches which is carrying current. The comparator provides a latching signal to the one of the auxiliary power switches which is actually conducting current and latches that particular power switch into an on state for the duration of current through the device. The latching circuit is so designed that the only time one of the auxiliary switching devices can be latched on is during the duration of an initial firing command signal.

Delgado, Eladio Clemente↗
DOE OSTI2020

Design of Auxiliary Circuit Elements for Achieving Zero Voltage Switching in a Wireless Power Transfer System

The auxiliary resonant commutated pole (ARCP) is being used to achieve zero voltage switching (ZVS) of power switches for improved efficiency and/or to reduce dv/dt at the switch node for better electromagnetic interference (EMI) performance and overall system reliability. This paper shows how an ARCP circuit can be used in a wireless power transfer system to achieve ZVS. Detailed analysis of ARCP circuit operation is presented to determine the requirements for achieving ZVS in the main switches of a wireless electric vehicle charging system. Based on this analysis, a design algorithm is developed to optimize the design of the ZVS assisting circuit components. The designed ARCP achieves soft switching of the MOSFETs in the primary inverter of an 85 kHz, 10 kW series-series compensated, stationary wireless power transfer system.

Saha, Tarak↗
DOE OSTI2017

A gating grid driver for time projection chambers

A simple but novel driver system has been developed to operate the wire gating grid of a Time Projection Chamber (TPC). This system connects the wires of the gating grid to its driver via low impedance transmission lines. When the gating grid is open, all wires have the same voltage allowing drift electrons, produced by the ionization of the detector gas molecules, to pass through to the anode wires. When the grid is closed, the wires have alternating higher and lower voltages causing the drift electrons to terminate at the more positive wires. Rapid opening of the gating grid with low pickup noise is achieved by quickly shorting the positive and negative wires to attain the average bias potential with N-type and P-type MOSFET switches. The circuit analysis and simulation software SPICE shows that the driver restores the gating grid voltage to 90% of the opening voltage in less than 0.20 µs, for small values of the termination resistors. When tested in the experimental environment of a time projection chamber larger termination resistors were chosen so that the driver opens the gating grid in 0.35 µs. In each case, opening time is basically characterized by the RC constant given by the resistance of the switches and terminating resistors and the capacitance of the gating grid and its transmission line. By adding a second pair of N-type and P-type MOSFET switches, the gating grid is closed by restoring 99% of the original charges to the wires within 3 µs.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2011

Fast-responding short circuit protection system with self-reset for use in circuit supplied by DC power

A short circuit protection system includes an inductor, a switch, a voltage sensing circuit, and a controller. The switch and inductor are electrically coupled to be in series with one another. A voltage sensing circuit is coupled across the switch and the inductor. A controller, coupled to the voltage sensing circuit and the switch, opens the switch when a voltage at the output terminal of the inductor transitions from above a threshold voltage to below the threshold voltage. The controller closes the switch when the voltage at the output terminal of the inductor transitions from below the threshold voltage to above the threshold voltage.

Burns, Bradley M.↗
DOE OSTI2016

Polarization of gold in nanopores leads to ion current rectification

Biomimetic nanopores with rectifying properties are relevant components of ionic switches, ionic circuits, and biological sensors. Rectification indicates that currents for voltages of one polarity are higher than currents for voltages of the opposite polarity. Ion current rectification requires the presence of surface charges on the pore walls, achieved either by the attachment of charged groups or in multielectrode systems by applying voltage to integrated gate electrodes. Here we present a simpler concept for introducing surface charges via polarization of a thin layer of Au present at one entrance of a silicon nitride nanopore. In an electric field applied by two electrodes placed in bulk solution on both sides of the membrane, the Au layer polarizes such that excess positive charge locally concentrates at one end and negative charge concentrates at the other end. Consequently, a junction is formed between zones with enhanced anion and cation concentrations in the solution adjacent to the Au layer. This bipolar double layer together with enhanced cation concentration in a negatively charged silicon nitride nanopore leads to voltage-controlled surface-charge patterns and ion current rectification. The experimental findings are supported by numerical modeling that confirm modulation of ionic concentrations by the Au layer and ion current rectification even in low-aspect ratio nanopores. Lastly, our findings enable a new strategy for creating ionic circuits with diodes and transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Gigahertz acoustic vibrations of elastically anisotropic Indium–tin-oxide nanorod arrays [Gigahertz modulation of the full visible spectrum via acoustic vibrations of elastically anisotropic Indium-tin-oxide nanorod arrays]

Active control of light is important for photonic integrated circuits, optical switches,. and telecommunications. Coupling light with acoustic vibrations in nanoscale optical resonators offers optical modulation capabilities with high bandwidth and Small footprint Instead of using noble metals, here we introduce indium tin-oxide nanorod arrays (ITO-NRAs) as the operating media;and demonstrate optical modulation covering the visible spectral range (from 360 to 700 nm), with similar to 20 GHz bandwidth through the excitation of coherent acoustic vibrations in ITO-NRAs. This broadband modulation results from the collective optical diffraction by the dielectric ITO-NRAs, and a high differential transmission modulation up to 10% is achieved through efficient near-infrared, on-plasmon-resonance pumping. By combining the frequency signatures Of the vibrational modes with finite-element simulations, we,further determine the anisotropic elastic constants for single-crystalline ITO, which are not known-for the bulk phase. Furthermore, this technique to determine elastic constants using Coherent acoustic vibrations of uniform nanostructures can be generalized to the study of other inorganic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Nonlinear optical localization in embedded chalcogenide waveguide arrays

We report the nonlinear optical localization in an embedded waveguide array fabricated in chalcogenide glass. The array, which consists of seven waveguides with circularly symmetric cross sections, is realized by ultrafast laser writing. Light propagation in the chalcogenide waveguide array is studied with near infrared laser pulses centered at 1040 nm. The peak intensity required for nonlinear localization for the 1-cm long waveguide array was 35.1 GW/cm{sup 2}, using 10-nJ pulses with 300-fs pulse width, which is 70 times lower than that reported in fused silica waveguide arrays and with over 7 times shorter interaction distance. Results reported in this paper demonstrated that ultrafast laser writing is a viable tool to produce 3D all-optical switching waveguide circuits in chalcogenide glass.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Interfacial charge-induced polarization switching in Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} bi-layer

Detailed polarization switching behavior of an Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} (AO/PZT) structure is examined by comparing the phenomenological thermodynamic model to the experimental polarization–voltage (P-V) results. Amorphous AO films with various thicknesses (2–10 nm) were deposited on the polycrystalline 150-nm-thick PZT film. The thermodynamic calculation showed that the transition from the ferroelectric-like state to the paraelectric-like state with increasing AO thickness occurs at ∼3 nm thickness. This paraelectric-like state should have exhibited a negative capacitance effect without permanent polarization switching if no other adverse effects are involved. However, experiments showed typical ferroelectric-like hysteresis loops where the coercive voltage increased with the increasing AO thickness, which could be explained by the carrier injection through the thin AO layer and trapping of the carriers at the AO/PZT interface. The fitting of the experimental P-V loops using the thermodynamic model considering the depolarization energy effect showed that trapped charge density was ∼±0.1 Cm{sup −2} and critical electric field at the Pt electrode/AO interface, at which the carrier transport occurs, was ∼±10 MV/cm irrespective of the AO thickness. Energy band model at each electrostatic state along the P-V loop was provided to elucidate correlation between macroscopic polarization and internal charge state of the stacked films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Strategies for simulating the time evolution of Hamiltonian lattice field theories

Simulating the time evolution of quantum field theories given some Hamiltonian H requires developing algorithms for implementing the unitary operator e -iHt . A variety of techniques exist that accomplish this task, with the most common technique used so far being Trotterization, which is a special case of the application of a product formula. However, other techniques exist that promise better asymptotic scaling in certain parameters of the theory being simulated, the most efficient of which are based on the concept of block encoding. In this work we study the performance of such algorithms in simulating lattice field theories. We derive and compare the asymptotic gate complexities of several commonly used simulation techniques in application to Hamiltonian lattice field theories. Using the scalar $\hat{φ}$ 4 theory as a test, we also perform numerical studies and compare the gate costs required by product formulas and signal-processing-based techniques to simulate time evolution. For the latter, we use the linear combination of unitaries (LCU) construction augmented with the quantum Fourier transform circuit to switch between the field and momentum eigenbases, which leads to immediate order-of-magnitude improvement in the cost of preparing the block encoding. Further, this paper also includes a pedagogical review of the techniques used, in particular product formulas, LCU, qubitization, quantum signal processing, as well as the technique for simulating geometrically-local Hamiltonians developed by Haah, Hastings, Kothari, and Low.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Current-Regulated Arc Modulator Optimization

n this study, the performance of a current-regulated arc modulator was investigated with a focus on its role in initiating and sustaining plasma discharge within the Magnetron Body of the LINAC system. The analysis centered on how switching components, circuit topology, and feedback loop architecture influence critical factors such as energy efficiency, discharge stability, and long-term plasma containment. Particular attention was given to variations in pulse termination behavior, as observed through oscilloscope traces, which revealed inconsistencies affecting the duty factor and cathode temperature. These fluctuations have downstream effects on the cesium-coated cathode surface, thereby impacting H⁻ ion production and beam reliability. Simulation-based testing in LTspice was used to evaluate noise suppression techniques and arc current regulation schemes, revealing how optimized snubber networks, improved pulse shaping, and feedback stability can mitigate modulator-induced noise. The results ide

Campos, Nathan↗
NASA NTRS1963

Gas-triggered inverse pinch switch.

Inverse-pinch triggered gap switch converted to gas-triggered operation by adding discharge constrictor and ablating inner column insulator

GAS DISCHARGE↗
NASA NTRS1966

Junction connectors permit strategic placement of television cameras

Cable run circuit with switching junction connectors at strategic locations enables television cameras to be plugged in with minimum effort wherever needed. Crimp-type contacts for mating connections reduce installation time and require a lesser level of technician skill than do soldered and potted connections.

Kempson, A., Jr.↗