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At least 289 records · Page 16

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NASA NTRS1981

Sounding-rocket experiment to study the diffuse soft X-ray background using a Si(Li) detector

Soft X-ray background in the energy range 0.4 to 10 keV was studied. A payload was developed which uses a wide angle, windowless, cooled, Si(Li) semiconductor detector system. With a resolution of less than 150 eV between 0.3 and 2.0 keV, the system is sensitive to an emission equivalent width of about 10 eV. Carbon and oxygen line emission were detected from the vicinity of the North Galactic Pole and the North Polar Spur.

Delvaille, J. P.↗

NASA NTRS1980

The mean-mass of cosmic-ray Ne, Mg and Si at 1.0 GeV/amu

The results of a new measurement of the mean mass of the cosmic-ray nuclei Ne, Mg and Si at an energy of 1.0 GeV/amu are presented. The method employs the filtering effect of the geomagnetic field on the incoming cosmic-ray fluxes. The results were obtained in two balloon flights from Muskogee, Oklahoma (vertical cutoff rigidity = 3.4 GV) yielding an exposure factor of 20 sq m srh. The instrument consists of a counter telescope containing 2 plastic scintillators, 2 Cerenkov radiators and a multiwire proportional chamber hodoscope for trajectory identification.

Dwyer, R.↗

NASA NTRS1980

Stark effect at the Si I series limit

Small redshifts and weakenings of high n lines in members of the Si series observed over a sunspot are interpreted as due to the Stark effect. Other origins, including Doppler motions, appear to be excluded. The spectra were obtained with high spatial resolution using the NRL high-resolution telescope and spectrograph. The origin of the Stark effect is not yet certain. An interpretation in terms of a quasi-static quadratic effect would require rather high perturber densities. An alternative interpretation would be a motional Stark effect, arising perhaps through the presence of magnetohydrodynamic waves.

Jordan, C.↗

NASA NTRS1982

Thermodynamic and transport combustion properties of hydrocarbons with air. Part 1: Properties in SI units

Thermodynamic and transport combustion properties were calculated for a wide range of conditions for the reaction of hydrocarbons with air. Three hydrogen-carbon atom ratios (H/C = 1.7, 2.0, 2.1) were selected to represent the range of aircraft fuels. For each of these H/C ratios, combustion properties were calculated for the following conditions: Equivalence ratio: 0, 0.25, 0.5, 0.75, 1.0, 1.25 Water - dry air mass ratio: 0, 0.03 Pressure, kPa: 1.01325, 10.1325, 101.325, 1013.25, 5066.25 (or in atm: 0.01, 0.1, 1, 10, 50) Temperature, K: every 10 degrees from 200 to 900 K; every 50 degrees from 900 to 3000 K Temperature, R: every 20 degrees from 360 to 1600 R; very 100 degrees from 1600 to 5400 R. The properties presented are composition, density, molecular weight, enthalphy, entropy, specific heat at constant pressure, volume derivatives, isentropic exponent, velocity of sound, viscosity, thermal conductivity, and Prandtl number. Property tables are based on composites that were calculated by assuming both: (1) chemical equilibrium (for both homogeneous and heterogeneous phases) and (2) constant compositions for all temperatures. Properties in SI units are presented in this report for the Kelvin temperature schedules.

Gordon, S.↗

NASA NTRS1982

Theoretical oscillator strengths for 21 spin-forbidden lines of C, N, O, Al, and Si

Detailed calculations are reported of the oscillator strengths of 21 spin-forbidden lines of C II, C III, N I, N II, N III, O I, O II, Al II, and Si III, including 10 lines arising from seven ground levels. All 21 lines lie in the region from 1160 to 2670 A, and the oscillator strengths probably are accurate typically to + or - 50%. These weak lines are particularly important in determining accurate elemental abundances in the interstellar gas.

Cowan, R. D.↗

NASA NTRS1982

The effects of Ni, Mo, Ti and Si on the mechanical properties of Cr free Mn steel (Fe-25Mn-5Al-2C)

The FeMnAlC alloys may hold potential as Cr-free replacements for high strategic material iron base superalloys, but little is known about their intermediate temperature (650 C to 870 C) mechanical properties. The effects of alloying elements on the mechanical properties of model FeMnAlC alloys were studied. Results showed that modified FeMnAlC alloys had promising short term, intermediate temperature properties but had relatively poor stress rupture lives at 172 MPa and 788 C. Room temperature and 788 C tensile strength of FeMnAlC alloys were better than common cast stainless steels. Changes in room temperature tensile and 788 C tensile strength and ductility, and 788 C stress rupture life were correlated with changes in Ni, Mo, Ti, and Si levels due to alloying effects on interstitial carbon levels and carbide morphology. Fe-25Mn-5Al-2C had a very poor stress rupture life at 172 MPa and 788 C. Addition of carbide-forming elements improved the stress rupture life.

Schuon, S. R.↗

NASA NTRS1984

Correlations between plasma variables and the deposition process of Si films from chlorosilanes in low pressure RF plasma of argon and hydrogen

The dissociation of chlorosilanes to silicon and its deposition on a solid substrate in a RF plasma of mixtures of argon and hydrogen were investigated as a function of the macrovariables of the plasma. The dissociation mechanism of chlorosilanes and HCl as well as the formation of Si in the plasma state were studied by sampling the plasma with a quadrupole mass spectrometer. Macrovariables such as pressure, net RF power input and locations in the plasma reactor strongly influence the kinetics of dissociation. The deposition process of microcrystalline silicon films and its chlorine contamination were correlated to the dissociation mechanism of chlorosilanes and HCl.

Avni, R.↗

NASA NTRS1984

Homogeneous condensation of gaseous mixtures of Si, Fe, O, N, and C in relative cosmic abundance and implications for astronomical condensation

The pressure versus temperature curves for homogeneous nucleation and condensation of two gaseous mixtures with nearly relative solar abundance of Si, Fe, O, N, and C in an excess of H were determined experimentally. Mixtures of CO, Fe(CO)5, H2, SiH4, and N2O in Ar were heated behind reflected shocks in a shock tube. The nucleation and condensation, which took place in the subsequent gas-dynamic expansion (cooling phase), was monitored by light scattering and turbidity. Grain morphologies and crystalline phases present in the condensates were determined by electron microscopy. These data cast doubt on the validity of both equilibrium and classical nucleation theoretical approaches to predict homogeneous condensation in a solar nebula or stellar atmosphere.

Stephens, J. R.↗

NASA NTRS1984

Si MOS devices at low temperatures

Low temperature operation of micron and submicron size Si MOSFETs (metal-oxide-semiconductor field-effect-transistors) results in their improved device characteristics. Various low temperature device properties such as increase in mobility, shift in the theshold voltage, increased reliability, etc., were considered. Other device characteristics such as the subthreshold behavior, delay times and miniaturization at low temperatures are discussed. Discussion includes presenting experimental results along with physical models explaining the observed effects.

Kamgar, A.↗

NASA NTRS1984

Astronomical applications of the new Goddard Si:Bi 16 x 16 array camera system

An improved 4-18 micron array camera system has been developed at NASA Goddard Space Flight Center for astronomical protometry, using 16 x 16 Si:Bi (bismuth dope silicon) accumulation mode charge injection device (AMCID) with 256 active pixels. An astronomical observing program using this device has been carried out. The 16 x 16 device had sufficiently good sensitivity, uniformity and noise characteristics to be used for successful observations at the Steward Observatory Mt. Lemmon 60 and 61-inch telescopes in May 1983, and at the NASA Infrared Telescope Facility (IRTF) at Mauna Kea in August 1983. Initial results indicate that this detector has sensitivity and noise characteristics comparable to other devices from the same generation of Aerojet arrays.

Lamb, G.↗

NASA NTRS1986

Silicon purification using a Cu-Si alloy source

Production of 99.9999% pure silicon from 98% pure metallurgical grade (MG) silicon by a vapor transport filtration process (VTP) is described. The VTF process is a cold wall version of an HCl chemical vapor transport technique using a Si:Cu3Si alloy as the silicon source. The concentration, origin, and behavior of the various impurities involved in the process were determined by chemically analyzing alloys of different purity, the slag formed during the alloying process, and the purified silicon. Atomic absorption, emission spectrometry, inductively coupled plasma, spark source mass spectrometry, and secondary ion mass spectroscopy were used for these analyses. The influence of the Cl/H ratio and the deposition temperature on the transport rate was also investigated.

Powell, R. C.↗

NASA NTRS1985

Thermodynamic properties of liquid Si and Ge

Thermodynamic properties of liquid Si and Ge are calculated using standard variational techniques, with the hard-sphere system as a reference system. Third-order electron-ion pseudopotential contributions are included nonvariationally and are shown to have little effect on the free energy, although a larger one on the derivatives of the free energy. Two different model pseudopotentials are used and give similar results in good agreement with experiment.

Shih, W.-H.↗

NASA NTRS1986

Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

Dhar, S.↗

NASA NTRS1986

Characterization of NTD germanium and ion-implanted Si bolometers at 0.3K and 0.1K

Bolometer elements were built and tested using NTD germanium and ion-implanted Si thermometer elements. The thermal links were made using aluminum wires and NbC(x)N(y) coated carbon fibers. The temperature dependence of the detector resistance, lead thermal conductivity, and heat capacity were measured. The dependence of the detector resistance on applied electric field was also measured. This, combined with the current-voltage curve for the detector, allowed the calculation of the detector responsivity. Known amounts of energy were deposited into the detector by allowing X-rays from the decay of Fe-55 to be thermalized in the detector. In the best-measured case, the predicted pulse height/measured height was 1.04 + or - .05. The noise at frequencies above 25 Hz in the NTD Ge was near that predicted by thermodynamics. The noise below 25 Hz has a 1/f character and may be in the carbon fiber/bolometer junction. The implanted detectors show some 1/f noise which depends on the total thermometer volume. Comparison between noise measurements and theory will be presented.

Moseley, H.↗

NASA NTRS1986

A study of Si:In hybrid surface channel IRCCD devices

Hybrid silicon Infrared Charge Coupled Devices (IRCCDs) are evaluated for use as viable astronomical detectors. A Si:In photoconductor array which is bump-bonded to a silicon multiplexer is described. A summary of the device parameters is given.

Tollestrup, E.↗

NASA NTRS1986

Imagery with a Si:Bi 16 x 16 array

A description of the design and performance of an imaging spectrometer intended for operation in the 7 to 14 micron wavelength range is presented. It is based upon a 16 by 16 element Si:Bi hybrid array, a circular variable filter wheel, and a microcomputer data acquisition system. The spatial-spectral photometric performances were evaluated in the laboratory as well as field tested at astronomical observatories. The performance characteristics of the system are presented as well as laboratory and astronomical images.

Goebel, J. H.↗

NASA NTRS1986

Development of 58 x 62 Si:Sb detector arrays

The fabrication of antimony doped silicon (Si:Sb) detector arrays are described for use in 30 micron infrared imaging applications. The operation of the multiplexer readout circuit which will be used for this application is also described.

Worley, S.↗

NASA NTRS1986

Preliminary test data using the MOS DRO with Si:In detector material

The initial testing performed on the Hughes Metal Oxide Semiconductor Direct Readout (MOS DRO) with a Si:In extrinsic infrared array is described. The testing to date was of a screening nature and the results are primarily qualitative rather than quantitative. At a later date the performance optimization phase will be initiated. An encouraging result is that this response is strongly dependent on the detector temperature, to the extent that thermal transients introduced during the chip readout will affect the performance. A responsivity of 1 A/W at 2.2 microns with a bias of 15 volts, which is well below what is optimum bias, was obtained.

Fowler, A. M.↗