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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Monte Carlo Modeling and Design of Photon Energy Attenuation Layers for >10× Quantum Yield Enhancement in Si-Based Hard X-ray Detectors

High-energy (>20 keV) X-ray photon detection at high quantum yield, high spatial resolution, and short response time has long been an important area of study in physics. Scintillation is a prevalent method but limited in various ways. Directly detecting high-energy X-ray photons has been a challenge to this day, mainly due to low photon-to-photoelectron conversion efficiencies. Commercially available state-of-the-art Si direct detection products such as the Si charge-coupled device (CCD) are inefficient for >10 keV photons. Here, we present Monte Carlo simulation results and analyses to introduce a highly effective yet simple high-energy X-ray detection concept with significantly enhanced photon-to-electron conversion efficiencies composed of two layers: a top high-Z photon energy attenuation layer (PAL) and a bottom Si detector. We use the principle of photon energy down conversion, where high-energy X-ray photon energies are attenuated down to ≤10 keV via inelastic scattering suitable for efficient photoelectric absorption by Si. Our Monte Carlo simulation results demonstrate that a 10–30× increase in quantum yield can be achieved using PbTe PAL on Si, potentially advancing high-resolution, high-efficiency X-ray detection using PAL-enhanced Si CMOS image sensors.

47 OTHER INSTRUMENTATION↗
NASA NTRS1976

Solid-state growth of Si to produce planar surfaces

Paralleling the sophisticated control of Si and GaAs growth from fluid media, we demonstrate control of Si growth using a solid growth medium. Faceted dissolution pits were first produced in a Si substrate using standard photolithographic techniques and Al metallization. Si was then evaporated onto the cold structure, depositing as amorphous material. Upon heating, the amorphous Si migrated through the solid Al and grew rapidly in the faceted pits, typically refilling them flush with the surrounding substrate. Evidence that the rapid growth occurs only while the amorphous Si is dissolving into the Al is presented.

Boatright, R. L.↗
NASA NTRS1988

Monte Carlo studies of liquid semiconductor surfaces - Si and Ge

The liquid-vapor interface of Si and Ge, and of Si doped with impurities is studied using the empirical Stillinger-Weber two- and three-body potentials. The surface tension of the pure elements is calculated by use of a direct evaluation of the free energy required to create the surface. For Si, both the surface tension and its temperature derivative are in good agreement with experiment. To within numerical accuracy, the free surfaces of both Si and Ge have a monotonically decreasing density, with a 10-90 percent surface width of about 2.2 A in both cases. When large and small model impurities are introduced into pure liquid Si, they are found in the simulations to migrate, respectively, towards the surface and away from the surface. This behavior is consistent with the interpretation that impurities with atoms larger than Si tend to lower the surface tension.

Wang, Z. Q.↗
NASA NTRS1989

Diffusion of Si in thin CoSi2 layers

Evidence of silicon diffusion in 100-A CoSi2 layers grown by room-temperature codeposition and annealing on Si(111) substrates was from Auger peak height ratios, which were interpreted in terms of a Si overlayer. It was found that this layer could be removed by chemical etching and reformed by subsequent annealing. By measuring the intensity of the plasmon energy loss peak associated with the CoL23 VV Auger peak, the effective thickness of the Si overlayer was measured as a function of annealing temperature, by calibrating the plasmon loss data against known overlayer thicknesses on unannealed samples. Similar results were found for samples grown both with and without the addition of a 10-A Si cap to prevent pinhole formation in the CoSi2; moreover, Si diffusion was also observed at temperatures well below the point where pinhole formation is first found, suggesting that Si diffusion does not depend on the presence of observable pinholes.

Schowengerdt, F. D.↗
NASA NTRS1989

Si II mapping of the neutral gas ring in the Galactic center - Evidence for dust destruction

The distribution of Si II emission in the Galactic center has been measured and found to extend beyond 4 pc from the center. The observed forbidden Si II 34.8 micron line, which is thermally excited by H I and H2 collisions, originates from the photodissociation region formed in the neutral gas ring surrounding the ionized core. Two peaks in the Si II emission are found, one lying 20 arcsec northeast of Sgr A-asterisk along the Galactic plane and the other located about 80 arcsec north of Sgr A-asterisk. The latter peak is located beyond the northern arm seen in the ionized gas. The ratio of Si II to dust mass density varies in the ring, indicating changes in the gas-to-dust ratio. The mass density of Si II and dust are anticorrelated, indicating that Si II tracks the destruction of dust.

Herter, T.↗
NASA NTRS1993

Spectroscopic ellipsometry studies of HF treated Si (100) surfaces

Both ex situ and in situ spectroscopic ellipsometry (SE) measurements were employed to investigate the effect of HF cleaning on Si surfaces. The hydrogen-terminated (H-terminated) Si surface was modeled as an equivalent dielectric layer, and monitored in real time by SE measurements. The SE analyses indicate that, after a 20-sec 9:1 HF dip without rinse, the Si (100) surface was passivated by the hydrogen termination and remained chemically stable. Roughness of the HF-etched bare Si (100) surface was observed, in an ultrahigh vacuum chamber (UHV), and analyzed by the in situ SE. Evidence for desorption of the H-terminated Si surface layer, after being heated to about 550 C in the UHV chamber, is presented and discussed. This is the first use of an ex situ and in situ real-time, nondestructive technique capable of showing state of passivation, the rate of reoxidation, and the surface roughness of the H-terminated Si surfaces.

Yao, Huade↗
NASA NTRS1993

Spectroscopic ellipsometry studies of HF treated Si (100) surfaces

Both ex situ and in situ spectroscopic ellipsometry (SE) measurements were employed to investigate the effects of HF cleaning on Si surfaces. The hydrogen-terminated (H-terminated) Si surface was modeled as an equivalent dielectric layer, and monitored in real time by SE measurements. The SE analyses indicate that after a 20-s 9:1 HF dip without rinse, the Si(100) surface was passivated by the hydrogen termination and remained chemically stable. Roughness of the HF-etched bare Si(100) surface was observed, in an ultrahigh vacuum (UHV) chamber, and analyzed by the in situ SE. Evidence for desorption of the H-terminated Si surface-layer, after being heated to approximately 550 C in the UHV chamber, is presented and discussed. This is the first use of an ex situ and in situ real-time, nondestructive technique capable of showing state of passivation, the rate of reoxidation, and the surface roughness of the H-terminated Si surfaces.

Yao, Huade↗
NASA NTRS1994

High quality InP-on-Si for solar cell applications

InP on Si solar cells combine the low-cost and high-strength of Si with the high efficiency and radiation tolerance of InP. The main obstacle in the growth of single crystal InP-on-Si is the high residual strain and high dislocation density of the heteroepitaxial InP films. The dislocations result from the large differences in lattice constant and thermal expansion mismatch of InP and Si. Adjusting the size and geometry of the growth area is one possible method of addressing this problem. In this work, we conducted a material quality study of liquid phase epitaxy overgrowth layers on selective area InP grown by a proprietary vapor phase epitaxy technique on Si. The relationship between growth area and dislocation density was quantified using etch pit density measurements. Material quality of the InP on Si improved both with reduced growth area and increased aspect ratio (length/width) of the selective area. Areas with etch pit density as low as 1.6 x 10(exp 4) sq cm were obtained. Assuming dislocation density is an order of magnitude greater than etch pit density, solar cells made with this material could achieve the maximum theoretical efficiency of 23% at AMO. Etch pit density dependence on the orientation of the selective areas on the substrate was also studied.

Shellenbarger, Zane A.↗
NASA NTRS1994

Al III, Si IV, and C IV absorption toward zeta Ophiuchi: Evidence for photionized and collisionally ionized gas

We present Goddard High-Resolution Spectrograph observations at 3.5 km/s resolution and signal-to-noise ratios of 30 to 60 for the Al III, Si IV, and N V absorption lines in the far-ultraviolet spectrum of the O9.5 V star zeat Ophiuchi. The measurement reveal three types of highly ionized gas along the 140 pc line of sight. (1) Narrow components of Al III (b = 4.3 km/s, the mean value of (v(helio)) = -7.8 km/s; b = 3.2 km/s, the mean value of (v(sub helio)) = -14.4 km/s) and Si IV (b = 5.3 km/s, the mean value of (v(sub helio)) = -15.0 km/s) trace photionized gas in the expanding H II region surrounding zeta Oph. The observed magnitude and direction of the velocity offset between the Al III and Si IV profiles can be explained by models of H II regions that incorporate expansion. Narrow C IV absorption associated with the H II region is not detected. Predictions of the expected amounts of Si IV and C IV overestimate the column densities of these ions by factors of 30 and more than 10, respectively. The discrepancy may be due to the effects of elemental depletions in the gas and/or to the interaction of the stellar wind with surrounding matter. (2) Broad (b = 15 to 18 km/s) and weak Si IV and C IV absorption components are detected near the mean value of (v(sub helio)) = -26 km/s. The high-ionization species associated with these absorption components are probably produced by electron collisional ionization in a heated gas. This absorption may be physically related to the zeta Oph bow shock ot to a cloud complex situated within the local interstellar medium at d less than 60 pc. The C IV to Si IV column density ratio in this gas is 8, a factor of 6 less than conductive interface models predict, but this discrepancy may be removed by considering the effects of self-photoionization within the cooling gas in the model calculations. (3) A broad (b = 13 km/s) and weak C IV absorption feature detected at the mean value of (v(sub helio)) = -61 km/s is not seen in other species. We tentatively ascribe this absorption to gas in a postshock ragion of an optically thin shock in the zeta Oph stellar wind.

Sembach, Kenneth R.↗
NASA NTRS1999

Low Loss, Finite Width Ground Plane, Thin Film Microstrip Lines on Si Wafers

Si RFICs on standard, 2 Omega-cm. Si wafers require novel transmission lines to reduce the loss caused by the resistive substrate. One such transmission line is commonly called Thin Film Microstrip (TFMS), which is created by depositing a metallic ground plane, thin insulating layers, and the microstrip lines on the Si wafer. Thus, the electric fields are isolated from the Si wafer. In this paper, it is shown through experimental results that the ground plane of TFMS may be finite width and comparable to the strip width in size while still achieving low loss on 2 Omega-cm Si. Measured effective permittivity shows that the field interaction with the Si wafer is small.

Ponchak, George E.↗
NASA NTRS2002

High Temperature Si-doped BN Interphases for Woven SiC/SiC Composites

The hydrolytic stability of high-temperature deposited Si-doped BN has been shown in the past to be superior in comparison to "pure" BN processed at similar or even higher temperatures. This type of material would be very desirable as a SiC/SiC composite interphase that is formed by chemical infiltration into multi-ply woven preform. However, due to rapid deposition on the preform outer surface at the high processing temperature, this has proven very difficult. To overcome this issue, single plies of woven fabric were infiltrated with Si-doped BN. Three composite panels of different SiC fiber types were fabricated with Si-doped BN interphases including Sylramic, Hi-Nicalon Type S and Sylramic-iBN fiber-types. The latter fiber-type possesses a thin in-situ grown BN layer on the fiber surface. High Si contents (approx. 7 to 10 a/o) and low oxygen contents (less than 1 a/o) were achieved. All three composite systems demonstrated reasonable debonding and sliding properties. The coated Sylramic fabric and composites were weak due to fiber degradation apparently caused during interphase processing by the formation of TiN crystals on the fiber surface. The Hi-Nicalon Type S composites with Si-doped BN interphase were only slightly weaker than Hi-Nicalon Type S composites with conventional BN when the strength on the load-bearing fibers at failure was compared. On the other hand, the Sylramic-iBN fabric and composites with Si-doped BN showed excellent composite and intermediate temperature stress-rupture properties. Most impressive was the lack of any significant interphase oxidation on the fracture surface of stress-ruptured specimens tested well above matrix cracking at 815C.

Morscher, Gregory N.↗
NASA NTRS2006

Stellar Imager (SI) Space Mission: Stellar Magnetic Activity

The Stellar Imager (SI) is a UV-Optical, Space-Based interferometer designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and stellar interiors (via asteroseismology) and of the Universe in general. SI is identified as a "Flagship and Landmark Discovery Mission" in the 2005 Sun Solar System Connection (SSSC) Roadmap and as a candidate for a "Pathways to Life Observatory" in the Exploration of the Universe Division (EUD) Roadmap (May, 2005). The ultra-sharp images of the Stellar Imager will revolutionize our view of many dynamic astrophysical processes: The 0.1 mas resolution of this deep-space telescope will transform point sources into extended sources, and snapshots into evolving views. SI'S science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI'S prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. In this paper we will discuss the science goals of the SI Mission and a mission architecture that could meet those goals.

Carpenter, K. G.↗
NASA NTRS2007

The Stellar Imager (SI) - A Mission to Resolve Stellar Surfaces, Interiors, and Magnetic Activity

The Stellar Imager (SI) is a UV/Optical, Space-Based Interferometer designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and, via asteroseismology, stellar interiors and of the Universe in general. The ultra-sharp images of the Stellar Imager will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI's science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI's prime goal is to enable long-term forecasting of solar activity and the space weather that it drives. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. SI is included as a 'Flagship and Landmark Discovery Mission' in the 2005 NASA Sun Solar System Connection (SSSC) Roadmap and as a candidate for a 'Pathways to Life Observatory' in the NASA Exploration of the Universe Division (EUD) Roadmap (May, 2005). In this paper we discuss the science goals and technology needs of, and the baseline design for, the SI Mission (http://hires.gsfc.nasa.gov/si/) its ability to image the 'Biggest, Baddest, Coolest Stars'.

Carpenter, Kenneth↗
NASA NTRS2008

The Stellar Imager (SI) Project: A Deep Space UV/Optical Interferometer (UVOI) to Observe the Universe at 0.1 Milli-Arcsec Angular Resolution

The Stellar Imager (SI) is a space-based, UV/ Optical Interferometer (UVOI) designed to enable 0.1 milliarcsecond (mas) spectral imaging of stellar surfaces and of the Universe in general. It will also probe via asteroseismology flows and structures in stellar interiors. SI's science focuses on the role of magnetism in the Universe and will revolutionize our understanding, of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes, such as accretion, in the Universe. The ultra-sharp images of SI will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI is a "Flagship and Landmark Discovery Mission" in the 2005 Heliophysics Roadmap and a potential implementation of the UVOI in the 2006 Science Program for NASA's Astronomy and Physics Division. We present here the science goals of the SI Mission, a mission architecture that could meet those goals, and the technology development needed to enable this missin. Additional information on SI can be found at: http://hires.gsfc.nasa.gov/si/.

Carpenter, Kenneth G.↗
NASA NTRS2017

Effect of Silicon on Activity Coefficients of Platinum in Liquid Fe-Si, With Application to Core Formation

Earth's core contains approximately 10% of a light element that is likely a combination of S, C, Si, and O, with Si possibly being the most abundant light element. Si dissolved into Fe liquids can have a large effect on the magnitude of the activity coefficient of siderophile elements (SE) in Fe liquids, and thus the partitioning behavior of those elements between core and mantle. The effect of Si can be small such as for Ni and Co, or large such as for Mo, Ge, Sb, As. The effect of Si on many siderophile elements is unknown yet could be an important, and as yet unquantified, influence on the core-mantle partitioning of SE. Here we report new experiments designed to quantify the effect of Si on the partitioning of Pt (with Re and Ru in progress or planned) between metal and silicate melt. The results will be applied to Earth, for which we have excellent constraints on the mantle Pt concentrations.

Righter, K.↗
NASA NTRS2019

SI IV Resonance Line Emission during Solar Flares: Non-LTE, Non-equilibrium, Radiation Transfer Simulations

The Interface Region Imaging Spectrograph routinely observes the Si IV resonance lines. When analyzing quiescent observations of these lines, it has typically been assumed that they form under optically thin conditions. This is likely valid for the quiescent Sun, but this assumption has also been applied to the more extreme flaring scenario. We used 36 electron-beam-driven radiation hydrodynamic solar flare simulations, computed using the RADYN code, to probe the validity of this assumption. Using these simulated atmospheres, we solved the radiation transfer equations to obtain the non-LTE, nonequilibrium populations, line profiles, and opacities for a model silicon atom, including charge exchange processes. This was achieved using the "minority species" version of RADYN. The inclusion of charge exchange resulted in a substantial fraction of Si IV at cooler temperatures than those predicted by ionization equilibrium. All simulations with an injected energy flux F> 5 x 10(exp 10) erg cm(exp -2) s(exp -1) resulted in optical depth effects on the Si IV emission, with differences in both intensity and line shape compared to the optically thin calculation. Weaker flares (down to F ~ 10(exp 9) erg cm(exp -2) s(exp -1)) also resulted in Si IV emission forming under optically thick conditions, depending on the other beam parameters. When opacity was significant, the atmospheres generally had column masses in excess of 5 x 10-6 g cm-2 over the temperature range 40-100 kK, and the Si IV formation temperatures were between 30 and 60 kK. We urge caution when analyzing Si IV flare observations, or when computing synthetic emission without performing a full radiation transfer calculation.

Kerr, Graham S.↗
DOE OSTI2021

Facile Synthesis of Micrometer-sized Hierarchical Porous Si@C Anodes for High-Performance Lithium-Ion Batteries

Extensive studies have been conducted to determine if replacing graphite anodes with silicon is feasible since silicon possesses a high capacity and is an abundant resource; however, Si anodes suffer significant volume changes during cycling, which pulverizes its structure and subsequently causes rapid capacity fading. We used SiO2 nanoparticles (nSiO2) and low-cost coal-derived humic acid as a feedstock to synthesize high performance Si-C anodes for Li-ion Batteries through spray drying, calcination, and magnesiothermic reductions. Our Si-C anodes features micrometer-sized porous Si coated with a graphitized carbon shell (mpSi@C). The hierarchical graphitized carbon shell and porous silicon structure relieve the mechanical stress of the Si phase upon cycling, which stabilizes the structure. This mpSi@C composite design allows for a high initial discharge capacity of 2199.9 mAh g-1 at 0.1 A g-1 and a cycling performance of 68% capacity retention after 100 cycles at 1.0 A g-1. The multipoint contact between the Si anode and C structure allows for a remarkable performance rate of 566.3 mAh g-1 at 5.0 A g-1.

01 COAL, LIGNITE, AND PEAT↗
DOE OSTI2021

Investigation of Gallium–Boron Spin-On Codoping for poly-Si/SiO x Passivating Contacts

A doping technique for p-type poly-Si/SiOx passivating contacts using a spin-on method for different mixtures of Ga and B glass solutions is presented. Effects of solution mixing ratios on the contact performance (implied open circuit voltage iV oc , contact resistivity ..rho..c) are investigated. For all as-annealed samples at different drive-in temperatures, increasing the percentage of Ga in the solution shows a decrement in iV oc (from ~680 to ~610 mV) and increment in ..rho..c (from ~3 to ~800 mO cm 2 ). After a hydrogenation treatment by depositing a SiN x /AlO x stack followed by forming gas annealing, all samples show improved iVoc (~700 mV with Ga-B co-doped, and ~720 mV with all Ga). Interestingly, when co-doping Ga with B, even a small amount of B in the mixing solution shows negative effects on the surface passivation. Active and total dopant profiles obtained by electrical capacitance voltage and secondary-ion mass spectrometry measurements, respectively, reveal a relatively low percentage of electrically-active Ga and B in the poly-Si and Si layers. Overall, these results help understand the different features of the two dopants: a low ρ c with B, a good passivation with Ga, their degree of activation inside the poly-Si and Si layers, and the annealing effects.

14 SOLAR ENERGY↗