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At least 289 records · Page 16

Photovoltaic Properties of Selenized CuGa/In Films with Varied Compositions

Thin CuGa/In films with varied compositions were deposited by co-evaporation and then selenized in situ with evaporated selenium. The selenized Cu(In, Ga)Se2 absorbers were used to fabricate 390 solar cells. Cu/(Ga+In) and Ga/(Ga+In) (Cu/III and Ga/III) were independently varied, and photovoltaic performance was optimal at Cu/III of 77-92% for all Ga/III compositions studied (Ga/III ~ 30, 50, and 70%). The best absorbers at each Ga/III composition were characterized with time-resolved photoluminescence, scanning electron microscopy, and secondary ion mass spectrometry, and devices were studied with temperature-dependent current density-voltage, light and electrical biased quantum efficiency, and capacitance-voltage. The best cells with Ga/III ~ 30, 50, and 70% had efficiencies of 14.5, 14.4, and 12.2% and maximum power temperature coefficients of -0.496, -0.452, and -0.413%/degrees C, respectively. This resulted in the Ga/III ~ 50% champion having the highest efficiency at temperatures greater than 40 degrees C, making it the optimal composition for practical purposes. This optimum is understood as a result of the absorber's band gap grading- where minimum band gap dominates short-circuit current density, maximum space charge region band gap dominates open-circuit voltage, and average absorber band gap dominates maximum power temperature coefficient.

14 SOLAR ENERGY↗

Spatial Instabilities, Homogeneities and Proximity Effects: Highly Correlated Metals

We have developed a superconducting scanning tunneling microscope (S-STM) which is a direct and local probe of the pair wave function of superconducting materials via the Josephson effect and quasiparticle spectra via scanning tunneling spectroscopy (STS). The novel feature of this device is a superconducting tip (Pb with an Ag capping layer) in close proximity to a superconducting sample to form a superconductor-insulator-superconductor (SIS) tunnel junction. The operation of this S-STM has been verified in the observation of Josephson tunneling between the tip and different sample systems including Pb films and NbSe 2 . At the experimental base temperature (T=2.1K) and large junction normal resistance (R N > 10 4 Ω) the phase is not locked in the washboard potential, but is excited thermally to be diffusive.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The Applications of Modern Nanoindentation

The TI-950 TriboIndenter is a nanoindentation device that obtains nanometer resolution material topography images using Scanning Probe Microscopy (SPM), modulus maps of material using nano-Dynamic Mechanical Analysis, and provides hardness measurements with a resolution of 0.2 nm. The instrument applies a force to a material through a sharp tip and used a transducer to measure the force a material applies back to the tip to derive information about the material. The information can be used to study the homogeneity of material surfaces as well as the homogeneity of the material as a function of depth and can lead to important information on the aging of the material as well as the consistency of the production of the material.

36 MATERIALS SCIENCE↗

Epidemiologic Study of One Million U.S. Radiation Workers and Veterans

The single most important question in radiation epidemiology is determining the level of health risks associated with radiation exposures that occur gradually over time. The study of one million early U.S. radiation workers and veterans has been designed to provide information on risk following chronic exposures by focusing on occupational groups with differing radiation exposure patterns, including intakes of radionuclides. The cost-efficient study builds on the investments made and foundations laid by investigators and government agencies over the past 30-40 years, which have established early worker cohorts that can now provide answers to questions on the lifetime human health risks associated with low-level radiation exposures. Within the overall goal of the epidemiologic study of one million U.S. radiation workers and veterans, this project had a total of nine specific aims which included studies of six populations for multiple endpoints including cancer overall mortality, leukemia and non-cancer mortality. The six populations included: Mound, Ohio, workers exposed to polonium, tritium and plutonium; nuclear power plant workers within the Landauer dosimetry and Nuclear Regulatory Commission data files; industrial radiographers; Mallinckrodt uranium workers; uranium workers who linked with the US Renal Data System; and nuclear weapons test participants. Over 400,000 workers and atomic veterans are included in these populations, with vital status being determined and analyses of all causes of death undertaken. A critical, integral component of the studies has been comprehensive evaluations of dosimetry involving, in many cases, complex dose reconstructions, and assessments of uncertainties. The work has also involved development of state-of-the art statistical approaches and modeling. All nine aims were accomplished successfully, resulting in publication of two NCRP documents, 13 literature papers, numerous Boice Reports in Health Physics News and many presentations of the work at scientific meetings. Furthermore, recommendations have been developed for an approach to integrate epidemiologic observations with radiation biology for risk assessment and biological models of radiation effect. The results of this project, as well as ongoing epidemiology studies of US radiation workers and veterans, are providing much-needed insights into complex issues regarding cancer and non-cancer health risks from low dose irradiation, how to apply a "dose and dose rate effectiveness factor" to scale the risks from the A-bomb survivor data to current occupational and environmental circumstances, and how to evaluate risk following intakes of radioactive substances. In addition to application to radiation workers, the results of the studies can provide guidance as society debates the role of nuclear energy and deals with nuclear waste, threats of terrorist attacks with nuclear/radiological devices, the remarkable increase in medical exposures to CT scans and nuclear imaging, and to NASA as radiation protection for astronauts on long-duration mission beyond low-Earth orbit is planned.

61 RADIATION PROTECTION AND DOSIMETRY↗

Safer and optimized vulnerability scanning for operational technology through integrated and automated passive monitoring and active scanning

Vulnerability scanning of embedded sensors and controllers have a history of causing disruption and malfunction within operation technology environments. Traditional information technology vulnerability scanning generally consists of blunt exercising all or a large population of test conditions to understand how equipment responds. Often the large number and varied conditions of the tests are too much for embedded systems to handle. This paper presents a methodology and framework for integrating passive monitoring and active scanning techniques to optimize the type and amount of necessary active communication tests while achieving acceptable levels of device and vulnerability discovery. Bayesian probability and networks are leveraged for inference to drive the automation of the scanning actions to achieve confidence in discovery. Through inference, selecting the optimal active scans with the least risk and highest confidence impact is possible, thereby eliminating unnecessary scans with uncertain effects. Results of experimenting with real power systems and the following probabilities are provided.

Key Management, ICS, SCADA, Authentication↗

Light field X-ray optics

Devices, systems and methods for performing X-ray scans with a single line of sight using a lens array for capturing the light field of the X-rays are described. In one example aspect, an X-ray optical system includes a primary optics subsection positioned to receive incoming X-rays after traversal through an object and to redirect the received incoming X-rays onto an intermediate image plane. The system also includes a microlens array positioned at or close to the intermediate image plane to receive at least some of the received incoming X-rays after redirection by the primary optics subsection to diffract the X-rays that are incident thereupon.

Kozioziemski, Bernard J.↗

TU-F-CAMPUS-J-03: Evaluation of a New GE Device-Less Cine 4D-CT

Purpose: Standard cine 4D-CT (S-4DCT) is the cine CT scan of the thorax followed by image sorting with the respiratory signal recorded by the RPM. Although the feasibility of cine 4D-CT without RPM or device-less 4DCT (DL-4DCT) has been reported in a laboratory setting, the only commercial implementation of DL-4DCT was made recently by GE based on the measurements of the lung, body and air area and density. We report the initial results of this new DL-4DCT on its determination of gross tumor volume (GTV). Methods: 30 stereotactic body radiation therapy (SBRT) patients with NSCLC were included in the study. All patients received the S-4DCT for their treatment planning. Their cine CT data without the respiratory signal from RPM were submitted to the DL-4DCT. The DL-4DCT image quality was assessed in reference to S-4DCT. Using maximum intensity projection (MIP) images, the GTVs of the S-4DCT and DL-4DCT were compared on a subset of 9 patients whose tumors in the low density lung regions could be contoured using a region growing algorithm in MIM without contouring bias from the user. A lower threshold of −424 HU was used for all patients and other algorithm parameters were held constant for each patient. Results: The DL-4DCT was able to produce the 4DCT images on 29 out of the 30 SBRT cases. One case failed due to the enhanced calcification surrounding both the breast implants. The GTVs determined on the 9 patients with DL-4DCT were 4.2 ± 4.8% smaller than the GTVs with S-4DCT. However, this was statistically insignificant (p=0.15). The Dice similarity coefficients were 95.1 ± 1.8%. The image quality of DL-4DCT and S-4DCT was similar on the 29 cases. Conclusion: The first commercial DL-4DCT was promising in generating 4D-CT images without a respiratory monitoring device in this preliminary study of 30 patients.

60 APPLIED LIFE SCIENCES↗

Combinatorial Platform for Discovery of Nanocrystal-Ink Based Earth Abundant Element PV with Efficiency Greater than 20%

(1) We successfully developed an ultrasonic spray coating system that can be used to deposit thin chalcogenide films with composition gradients. 4 publications under the contract have been published with the instrument. The instrument was used to reveal the effects of intrinsic composition and examine the effects of 25 different dopant elements. Surprisingly, doping with most elements had little to no effect on the quasi-Fermi level splitting of bare films. Ge and Li were explored in depth, and our best devices utilize lithium doping. (2) We developed a new model of absorption coefficients, that when combined with absolute intensity photoluminescence, yield the steady-state quasi-Fermi level splitting and a way to quantify the sub-bandgap absorption. This has resulted in 2 publications on the method, with another in preparation. This is a significant development that should impact other PV technologies. (3) We found that lithium doping has several beneficial effects on CZTSSe. It improves the open-circuit voltage, short circuit current, fill factor, and shunt resistance. By using scanning Kelvin probe microscopy (SKPM) and conductive AFM (along with device measurements, DLPC, and XPS), we discovered that lithium acts to increase the p-type doping in both the grain and grain boundaries (GBs). The effect is stronger in the GBs and changes the direction of the electric field at the GB. In lithium doped devices, an electric field repels minority carrier electrons away from the GB. This resulted in a publication and the fabrication of 11.8% efficient devices from a DMSO-thiourea molecular ink. The mechanism of action is most likely due to the formation of LiCu, which inhibits the formation of the donor defect ZnCu. This reduces compensation and increases the net p-type doping. (4) By alloying with germanium, we have fabricated CZTGSSe devices with the best open-circuit voltage (relative the maximum theoretical open-circuit voltage for the bandgap) for any kesterite solar cell. The Voc/Voc,max is 63%, compared to 58% for the record efficiency cell from hydrazine. The origin of the increased voltage efficiency appears to be related to the conduction band off-set and the suppression of a deep defect (~0.8 eV), most likely due to CuSn, but SnZn or SnCu are also possible. All milestones and go/no-go metrics were met with exception of the device efficiency milestone (15% then 20%). However, under the contract, hydrazine-free CZTSSe device efficiencies increased from 7.2% at the start of the contract to 11.8% upon completion.

14 SOLAR ENERGY↗

Electric current paths in a Si:P delta-doped device imaged by nitrogen-vacancy diamond magnetic microscopy

The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy, a technique known as atomic precision advanced manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this report, we used nitrogen-vacancy (NV) centers in diamond for wide-field magnetic imaging (with a few-mm field of view and micron-scale resolution) of magnetic fields from surface currents flowing in an APAM test device made of a P delta-doped layer on a Si substrate, a standard APAM witness material. We integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current densities, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A m -1 , corresponding to a smallest-detectable current in the 200 μm wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Direct Deposition of Nonaqueous SnO 2 Dispersion by Blade Coating on Perovskites for the Scalable Fabrication of p–i–n Perovskite Solar Cells

Tin(IV) oxide materials have been extensively used as electron transport materials in n–i–p perovskite solar cells (PSCs) due to their superior optoelectronic properties, low-temperature processability, and high chemical stability. However, solvent incompatibility and processing temperature have limited the direct deposition of fully solution-processed SnO 2 in p–i–n devices. In this study, we overcome this limitation by the functionalization of SnO 2 nanoparticles with acetate through ligand exchange, allowing their dispersion in anhydrous ethanol. The SnO 2 dispersion was deposited on the perovskite absorber by blade coating without damaging the underlying perovskite layer, as determined by X-ray diffraction and scanning electron microscopy. Photoluminescence spectroscopy confirmed effective electron extraction. The champion device shows 14.1% initial power conversion efficiency (PCE) which is unprecedented for a p–i–n device employing solution-phase SnO 2 . Finally, PSCs stored for 40 days in a nitrogen flow box retained an average of 95.8% of the initial PCE.

14 SOLAR ENERGY↗

Characterization of Amplification Properties of the Superconducting-Ferromagnetic Transistor

Here we report on the measurement results of the superconducting-ferromagnetic transistors (SFTs). The devices were made at Northwestern University and Hypres (SeeQC), Inc. (Nevirkovets et al., 2014; 2015). SFT is a multiterminal device with the SIS'FIFS (or SFIFS'IS) structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material, respectively) exploiting intense quasiparticle injection in order to modify the nonlinear I-V curve of a superconducting tunnel junction. SFT is capable of providing voltage, current, and power amplification while having good input/output isolation. We characterized the devices using different measurement techniques. We measured S parameters of the single- and double-acceptor devices at frequencies up to 5 MHz. Importantly, we confirmed that the isolation between the input and output of the device is quite good. However, the techniques typically employed to characterize semiconductor devices do not allow for revealing the full potential of our low-resistive SFT devices, especially those having two acceptors. In the latter case, we also tested the devices using the battery-powered current sources with floating grounds. Analyzing double-acceptor I-V curves recorded at different levels of injection currents, for an optimal load, we deduced a small-signal voltage gain of 33 and a power gain of 2.4. We suggest that further improvement of the SFT device parameters is possible in optimized devices, so that the device potentially may serve as a preamplifier for readout of output signals of cryogenic detectors and be useful as an element of other superconductor-based circuits. In addition, we used scanning transmission electron microscopy to identify some problems in the fabrication of the devices without any planarization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Direct fabrication of thin layer MoS{sub 2} field-effect nanoscale transistors by oxidation scanning probe lithography

Thin layer MoS{sub 2}-based field effect transistors (FET) are emerging candidates to fabricate very fast and sensitive devices. Here, we demonstrate a method to fabricate very narrow transistor channel widths on a single layer MoS{sub 2} flake connected to gold electrodes. Oxidation scanning probe lithography is applied to pattern insulating barriers on the flake. The process narrows the electron path to about 200 nm. The output and transfer characteristics of the fabricated FET show a behavior that is consistent with the minimum channel width of the device. The method relies on the direct and local chemical modification of MoS{sub 2}. The straightforward character and the lack of specific requirements envisage the controlled patterning of sub-100 nm electron channels in MoS{sub 2} FETs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Combinatorial Platform for Discovery of Nanocrystal-Ink Based Earth Abundant Element PV with Efficiency Greater than 20% (Final Technical Report)

(1) We successfully developed an ultrasonic spray coating system that can be used to deposit thin chalcogenide films with composition gradients. 4 publications under the contract have been published with the instrument. The instrument was used to reveal the effects of intrinsic composition and examine the effects of 25 different dopant elements. Surprisingly, doping with most elements had little to no effect on the quasi- Fermi level splitting of bare films. A few elements were found to be detrimental including Fe, Co, and Ni. However, Li, Ge, and others were discovered to be beneficial. Ge and Li were explored in depth, and our best devices utilize lithium doping. (2) We developed a new model of absorption coefficients, that when combined with absolute intensity photoluminescence, yield the steady-state quasi-Fermi level splitting and a way to quantify the sub-bandgap absorption. This has resulted in 2 publications on the method, with another in preparation. This is a significant development that should impact other PV technologies. We have already received samples from 2 major PV companies to examine. Further, the model shows that tail states (potential fluctuations) in CZTSSe can only explain about 90 mV of loss in the open circuit voltage. (3) We found that lithium doping has several beneficial effects on CZTSSe. It improves the open-circuit voltage, short circuit current, fill factor, and shunt resistance. By using scanning Kelvin probe microscopy (SKPM) and conductive AFM (along with device measurements, DLPC, and XPS), we discovered that lithium acts to increase the p-type doping in both the grain and grain boundaries (GBs). The effect is stronger in the GBs and changes the direction of the electric field at the GB. In lithium doped devices, an electric field repels minority carrier electrons away from the GB. This resulted in a publication and the fabrication of 11.8% efficient devices from a DMSO-thiourea molecular ink. The mechanism of action is most likely due to the formation of Li Cu , which inhibits the formation of the donor defect Zn Cu . This reduces compensation and increases the net p-type doping. (4) By alloying with germanium, we have fabricated CZTGSSSe devices with the best open-circuit voltage (relative the maximum theoretical open-circuit voltage for the bandgap) for any kesterite solar cell. The Voc/Voc,max is 63%, compared to 58% for the record efficiency cell from hydrazine. The origin of the increased voltage efficiency appears to be related to the conduction band off-set and the suppression of a deep defect ($\sim$0.8 eV), most likely due to Cu Sn , but Sn Zn or Sn Cu are also possible. All milestones and go/no-go metrics were met with exception of the device efficiency milestone (15% then 20%). However, under the contract, hydrazine-free CZTSSe device efficiencies increased from 7.2% at the start of the contract to 11.8% upon completion.

14 SOLAR ENERGY↗

Analysis of Vernier Scans during RHIC Run-13 (pp at 255 GeV/beam)

At RHIC the collision rate per IP is measured by the Zero Degree Calorimeters (ZDC). Both, STAR and PHENIX, contain those detectors that are of identical design but are equipped with different Photo Multiplier Tubes (PMT) and operated with individually different HV setups and also slightly different read-out electronics. The collision rate, as measured by the ZDC, corresponds to the rate of mutual forward neutral particles above a variable threshold and within a certain coincidence window. Due to the differences in the detector electronics the two devices are calibrated individually every year by the use of vernier scans. During the RHIC polarized proton Run in 2013 a total of 6 vernier scans per experiment were performed. This note presents the data and summarizes the results, i.e. effective ZDC cross section and emittance measurements, from those scans.

43 PARTICLE ACCELERATORS↗

Atomically Precise PdSe 2 Pentagonal Nanoribbons

We report atomically precise pentagonal PdSe 2 nanoribbons (PNRs) fabricated on a pristine PdSe 2 substrate with a hybrid method of top-down and bottom-up processes. The PNRs form a uniform array of dimer structure with a width of 2.4 nm and length of more than 200 nm. In situ four-probe scanning tunneling microscopy (STM) reveals metallic behavior of PNRs with ballistic transport for at least 20 nm in length. Density functional theory calculations produce a semiconducting density of states of isolated PNRs and find that the band gap narrows and disappears quickly once considering coupling between PNR stacking layers or interaction with the PdSe 2 substrate. The coupling of PNRs is further corroborated by Raman spectroscopy and field-effect transistor measurements. The facile method of fabricating atomically precise PNRs offers an air-stable functional material for dimensional control.

36 MATERIALS SCIENCE↗

SU-F-J-166: Volumetric Spatial Distortions Comparison for 1.5 Tesla Versus 3 Tesla MRI for Gamma Knife Radiosurgery Scans Using Frame Marker Fusion and Co-Registration Modes

Purpose: To compare typical volumetric spatial distortions for 1.5 Tesla versus 3 Tesla MRI Gamma Knife radiosurgery scans in the frame marker fusion and co-registration frame-less modes. Methods: Quasar phantom by Modus Medical Devices Inc. with GRID image distortion software was used for measurements of volumetric distortions. 3D volumetric T1 weighted scans of the phantom were produced on 1.5 T Avanto and 3 T Skyra MRI Siemens scanners. The analysis was done two ways: for scans with localizer markers from the Leksell frame and relatively to the phantom only (simulated co-registration technique). The phantom grid contained a total of 2002 vertices or control points that were used in the assessment of volumetric geometric distortion for all scans. Results: Volumetric mean absolute spatial deviations relatively to the frame localizer markers for 1.5 and 3 Tesla machine were: 1.39 ± 0.15 and 1.63 ± 0.28 mm with max errors of 1.86 and 2.65 mm correspondingly. Mean 2D errors from the Gamma Plan were 0.3 and 1.0 mm. For simulated co-registration technique the volumetric mean absolute spatial deviations relatively to the phantom for 1.5 and 3 Tesla machine were: 0.36 ± 0.08 and 0.62 ± 0.13 mm with max errors of 0.57 and 1.22 mm correspondingly. Conclusion: Volumetric spatial distortions are lower for 1.5 Tesla versus 3 Tesla MRI machines localized with markers on frames and significantly lower for co-registration techniques with no frame localization. The results show the advantage of using co-registration technique for minimizing MRI volumetric spatial distortions which can be especially important for steep dose gradient fields typically used in Gamma Knife radiosurgery. Consultant for Elekta AB.

60 APPLIED LIFE SCIENCES↗

Preparation of Mg/Al-LDHs intercalated with dodecanoic acid and investigation of its antiwear ability

Graphical abstract: Comparable studies of nano Mg/Al-LDHs powder on the anti-wear properties of lubricating oil were carried out on four-ball and gear testing machine. Mg/Al-NO{sub 3}{sup −}-LDHs and Mg/Al-DA-LDHs powder in base oil possess an excellent friction-reducing property, with a friction coefficient at 23.9% and 22.2% which are lower than that of the base oil Highlights: ► We synthesized nano Mg/Al-NO{sub 3}{sup −}(DA)-LDHs via coprecipitation and anion exchange. ► The optimal exchanging condition is as follows: water dispersion and pH value of 5. ► The tribological properties of LDHs were studied on four-ball and gear machine. ► We reported nano LHDs as anti-wear materials in lubricates for the first time. ► The greatest decline in friction coefficient of lubricates with LDHs is up to 23.9%. -- Abstract: Layered double hydroxides (LDHs) intercalated with dodecanoic acid have been prepared by anion exchange with Mg/Al-NO{sub 3}{sup −}-LDHs as the precursor under acid condition with water and ethanol as the dispersion medium. The obtained materials were characterized by X-ray diffraction (XRD), thermogravimetric and differential thermal analyser (TG–DTA), Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and BET. Patterns of XRD and FTIR show that interlayer nitrate ions have substituted with dodecanoic acid and the gallery height has increased from 0.88 nm to 1.99 nm. The interlayer distance of the intercalated materials increases with the increase of pH value due to the different arrangement of interlayer anions. The tribological performance of LDHs precursor and intercalated LDHs in base oil were studied for the first time by using four-ball wear machine and gear testing machine. Experimental results show that the LDHs precursor and intercalated LDHs powder are excellent in friction-reducing, with decreases in friction coefficient by 23.9% and 22.2% respectively comparing with base oil.

36 MATERIALS SCIENCE↗

Locating the electrical junctions in Cu(In,Ga)Se 2 and Cu 2 ZnSnSe 4 solar cells by scanning capacitance spectroscopy

Here, we determined the electrical junction (EJ) locations in Cu(In,Ga)Se 2 (CIGS) and Cu 2 ZnSnSe 4 (CZTS) solar cells with ~20-nm accuracy by developing scanning capacitance spectroscopy (SCS) applicable to the thin-film devices. Cross-sectional sample preparation for the SCS measurement was developed by high-energy ion milling at room temperature for polishing the cross section to make it flat, followed by low-energy ion milling at liquid nitrogen temperature for removing the damaged layer and subsequent annealing for growing a native oxide layer. The SCS shows distinct p-type, transitional, and n-type spectra across the devices, and the spectral features change rapidly with location in the depletion region, which results in determining the EJ with ~20-nm resolution. We found an n-type CIGS in the region next to the CIGS/CdS interface; thus, the cell is a homojunction. The EJ is ~40 nm from the interface on the CIGS side. In contrast, such an n-type CZTS was not found in the CZTS/CdS cells. The EJ is ~20 nm from the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. Our results of unambiguously determination of the junction locations contribute significantly to understanding the large open-circuit voltage difference between CIGS and CZTS.

14 SOLAR ENERGY↗