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At least 289 records · Page 16

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DOE OSTI2020

Spiky CMB distortions from primordial bubbles

Primordial bubbles that possibly nucleate through quantum tunneling during inflation in a multidimensional potential might have left some relic detectable at the present time. These bubbles turn into black holes during the radiation era, which may account for the LIGO black holes, supermassive black holes, and may play an important role in dark matter. Typically, these black holes are surrounded by an energy deficit in the form of a spherical sound wave packet propagating outwards. In this work we study how this perturbation of the cosmic plasma dissipates before the time of recombination, leading to spectral distortions in CMB. Finally, we find that there may exist some rare regions on the last scattering surface containing huge black holes, which have produced potentially detectable point-like signals of µ-type distortions.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2022

No correlation of the Lyman continuum escape fraction with spectral hardness

The properties that govern the production and escape of hydrogen-ionizing photons (Lyman continuum, LyC; with energies > 13.6 eV) in star-forming galaxies are still poorly understood, but they are key to identifying and characterizing the sources that reionized the Universe. Here we empirically explore the relation between the hardness of ionizing radiation and the LyC leakage in a large sample of low- z star-forming galaxies from the recent Hubble Space Telescope Low- z Lyman Continuum Survey. Using Sloan Digital Sky Survey stacks and deep X-shooter observations, we investigate the hardness of the ionizing spectra ( Q He + / Q H ) between 54.4 eV (He + ) and 13.6 eV (H) from the optical recombination lines He II 4686 Å and Hβ 4861 Å for galaxies with LyC escape fractions spanning a wide range, f esc (LyC) ≃ 0–90%. We find that the observed intensity of He II/Hβ is primarily driven by variations in the metallicity, but is not correlated with LyC leakage. Both very strong (< f esc (LyC)> ≃ 0.5) and nonleakers (< f esc (LyC)> ≃ 0) present similar observed intensities of He II and Hβ at comparable metallicity, between ≃0.01 and ≃0.02 for 12 + log(O/H)> 8.0 and < 8.0, respectively. Our results demonstrate that Q He + / Q H does not correlate with f esc (LyC), which implies that strong LyC emitters do not show harder ionizing spectra than nonleakers at similar metallicity.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2022

Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling

InGaN-based multi-quantum well (MQW) solar cells are promising devices for photovoltaics (e.g., for tandem solar cells and concentrator systems), space applications, and wireless power transfer. In order to improve the efficiency of these devices, the factors limiting their efficiency and stability must be investigated in detail. Due to the complexity of a MQW structure, compared with a simple pn junction, modeling the spectral response of these solar cells is not straightforward, and ad hoc methodologies must be implemented. In this paper, we propose a model, based on material parameters and closed-formula equations, that describes the shape of the quantum efficiency of InGaN/GaN MQW solar cells, by taking into account the layer thickness, the temperature dependence of the absorption coefficient, and quantum confinement effects. We demonstrate (i) that the proposed model can effectively reproduce the spectral response of the cells; in addition, (ii) we prove that the bulk p-GaN layer absorbs radiation, but the carriers photogenerated in this region do not significantly contribute to device current. Finally, we show that (iii) by increasing the temperature, there is a redshift of the absorption edge due to bandgap narrowing, which can be described by Varshni law and is taken into account by the model, and a lowering in the extraction efficiency due to the increase in recombination (mostly Shockley–Read–Hall) inside the quantum wells, which is also visible by decreasing light intensity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2021

Dielectric screening in perovskite photovoltaics

Abstract The performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.

14 SOLAR ENERGY↗

DOE OSTI2023

Minimizing Interfacial Recombination in 1.8 eV Triple‐Halide Perovskites for 27.5% Efficient All‐Perovskite Tandems

Abstract All‐perovskite tandem solar cells show great potential to enable the highest performance at reasonable costs for a viable market entry in the near future. In particular, wide‐bandgap (WBG) perovskites with higher open‐circuit voltage ( V OC ) are essential to further improve the tandem solar cells’ performance. Here, a new 1.8 eV bandgap triple‐halide perovskite composition in conjunction with a piperazinium iodide (PI) surface treatment is developed. With structural analysis, it is found that the PI modifies the surface through a reduction of excess lead iodide in the perovskite and additionally penetrates the bulk. Constant light‐induced magneto‐transport measurements are applied to separately resolve charge carrier properties of electrons and holes. These measurements reveal a reduced deep trap state density, and improved steady‐state carrier lifetime (factor 2.6) and diffusion lengths (factor 1.6). As a result, WBG PSCs achieve 1.36 V V OC , reaching 90% of the radiative limit. Combined with a 1.26 eV narrow bandgap (NBG) perovskite with a rubidium iodide additive, this enables a tandem cell with a certified scan efficiency of 27.5%.

14 SOLAR ENERGY↗

DOE OSTI2022

On the Interplay between CT and Singlet Exciton Emission in Organic Solar Cells with Small Driving Force and Its Impact on Voltage Loss

The interplay between free charge carriers, charge transfer (CT) states and singlet excitons (S 1 ) determines the recombination pathway and the resulting open circuit voltage (V OC ) of organic solar cells. By combining a well-aggregated low bandgap polymer with different blend ratios of the fullerenes PCBM and ICBA, the energy of the CT state (E CT ) is varied by 130 meV while leaving the S 1 energy of the polymer (E S 1 ) unaffected. It is found that the polymer exciton dominates the radiative properties of the blend when approaches E CT , while the V OC remains limited by the non-radiative decay of the CT state. It is concluded that an increasing strength of the exciton in the optical spectra of organic solar cells will generally decrease the non-radiative voltage loss because it lowers the radiative V OC limit (V OC,rad ), but not because it is more emissive. The analysis further suggests that electronic coupling between the CT state and the S 1 will not improve the V OC , but rather reduce the V OC,rad . It is anticipated that only at very low CT state absorption combined with a fairly high CT radiative efficiency the solar cell benefit from the radiative properties of the singlet excitons.

14 SOLAR ENERGY↗

DOE OSTI2024

Investigating the Effects of Individual Neutron-Induced Defects in Bipolar Junction Transistors

Here, this study investigates neutron-induced displacement damage in Bipolar Junction Transistors (BJTs) using TCAD models informed by Deep-Level-Transient-Spectroscopy (DLTS) data. These models are calibrated and validated against experimental measurements performed at various neutron fluences. Both npn and pnp transistor configurations are studied to analyze the effects of individual traps on carrier recombination and base leakage currents. In npn transistors, deep traps (0.42 eV from the conduction band) dominate at low voltages, while shallow traps (0.17 eV from the conduction band) become prominent at higher voltages. Conversely, pnp transistors have base leakage current predominantly due to deep-level traps. The study observes a notable trend in trap density versus fluence, characterized by a linear relationship on a log-log scale. These insights into defect evolution under radiation conditions are crucial for optimizing semiconductor device reliability and performance in radiation-prone environments.

42 ENGINEERING↗

DOE OSTI2022

Pre-main-sequence Brackett Emitters in the APOGEE DR17 Catalog: Line Strengths and Physical Properties of Accretion Columns

Very young (t ≲ 10 Myr) stars possess strong magnetic fields that channel ionized gas from the interiors of their circumstellar disks to the surface of the star. Upon impacting the stellar surface, the shocked gas recombines and emits hydrogen spectral lines. To characterize the density and temperature of the gas within these accretion streams, we measure equivalent widths of Brackett (Br) 11–20 emission lines detected in 1101 APOGEE spectra of 326 likely pre-main-sequence accretors. For sources with multiple observations, we measure median epoch-to-epoch line strength variations of 10% in Br11 and 20% in Br20. We also fit the measured line ratios to predictions of radiative transfer models by Kwan & Fischer. We find characteristic best-fit electron densities of n e = 10 11 –10 12 cm -3 , and excitation temperatures that are inversely correlated with electron density (from T ~ 5000 K for n e ~ 10 12 cm -3 to T ~ 12,500 K at n e ~ 10 11 cm -3 ). These physical parameters are in good agreement with predictions from modeling of accretion streams that account for the hydrodynamics and radiative transfer within the accretion stream. We also present a supplementary catalog of line measurements from 9733 spectra of 4255 Brackett emission-line sources in the APOGEE Data Release 17 data set.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2022

Solute segregation and precipitation across damage rates in dual-ion–irradiated T91 steel

We report that dual-ion irradiations using 5.0 MeV defocused Fe 2+ ions and co-injected energy degraded 2.00 to 2.85 MeV He 2+ ions were conducted on a Fe9CrMo ferritic-martensitic steel T91 to 17 dpa at a damage rate range of 5 × 10 -5 dpa/s to 3 × 10 -3 dpa/s at 445°C, followed by characterization of the microstructure using conventional and scanning transmission electron microscopy. Radiation induced Ni/Si clusters and radiation induced segregation were quantified using energy dispersive X-ray spectroscopy at each condition and were compared with the same material irradiated in the BOR-60 reactor and in the as-received condition. No significant Cr segregation was found at lath boundaries after dual-ion irradiation, while Ni and Si enrichments both decreased with increasing damage rate leading to a sharp decrease in the density of Ni/Si clusters with damage rate. Increased point defect recombination at higher ion damage rates likely reduced the Ni/Si cluster density compared with BOR-60. Although the overall vacancy concentration and diffusion are enhanced by the irradiation damage rate, the lack of time for thermal diffusion and ballistic displacements of solutes are significant limiting factors for Ni/Si cluster formation. This work demonstrates the effect of irradiation damage rate on elemental segregation and clustering when using ion irradiation to simulate reactor irradiation.

36 MATERIALS SCIENCE↗

DOE OSTI2023

The role of plasma–atom and molecule interactions on power & particle balance during detachment on the MAST Upgrade Super-X divertor

This paper shows first quantitative analysis of the detachment processes in the MAST Upgrade Super-X divertor (SXD). We identify an unprecedented impact of plasma-molecular interactions involving molecular ions (likely $D^+_2$), resulting in strong ion sinks (Molecular Activated Recombination—MAR), leading to a reduction of ion target flux. The MAR ion sinks exceed the divertor ion sources before electron-ion recombination (EIR) starts to occur, suggesting that significant ionisation occurs outside of the divertor chamber. In the EIR region, $T_e \ll 0.2$ eV is observed and MAR remains significant in these deep detached phases. The total ion sink strength demonstrates the capability for particle (ion) exhaust in the Super-X Configuration. Molecular Activated Dissociation is the dominant volumetric neutral atom creation process can lead to an electron cooling of 20% of $P_\mathrm{SOL}$. The measured total radiative power losses in the divertor chamber are consistent with inferred hydrogenic radiative power losses. This suggests that intrinsic divertor impurity radiation, despite the carbon walls, is minor in the divertor chamber. This contrasts previous TCV results, which may be associated with enhanced plasma-neutral interactions and reduced chemical erosion in the detached, tightly baffled SXD. The above observations have also been observed in higher heat flux (narrower SOL width) type I ELMy H-mode discharges. This provides evidence that the characterisation in this paper may be general.

plasma-molecular interactions↗

DOE OSTI2024

Carrier Dynamics and Photoluminescence in Antimony-Doped CdTe and CdSeTe

Arsenic (As)-doped graded Cd(Se,Te) photovoltaics have achieved record efficiency of 22.4%, but further increases in efficiency have been limited by doping activation of only ~1% and radiative voltage losses of ~100 meV. Antimony (Sb) can also act as a p-type dopant of Cd(Se,Te) but has received relatively little attention. We measured carrier dynamics and photoluminescence of Sb-doped CdTe and CdSeTe films grown by vapor-transport deposition, with dopant activation up to ~20% Time resolved terahertz (TRTS) and photoluminescence (TRPL) data were fit by simulating the semiconductor equations, revealing bulk lifetimes of >20 ns in CdTe:Sb and >65 ns in CdSeTe:Sb and surface recombination velocities <1000 cm/s at alumina interfaces. We also qualitatively compare transients and PL spectra of doped and undoped films, with no apparent variation associated with hole concentrations up to 1015 cm-3. Preliminary variable temperature steady state photoluminescence (VT-SSPL) indicates dominant band-gap emission in CdSeTe:Sb and no evidence of potential fluctuations with Sb-doping up to this hole concentration.

14 SOLAR ENERGY↗

DOE OSTI2022

Gamma-ray spectrometry analysis methods for radioisotope dissolution and mixing for nuclear forensics applications

We report the production of surrogate nuclear explosive debris involves the dissolution of irradiated fissile material, elemental isolation, and recombination based on required fission product ratios. Gamma-ray spectrometry is used following each step to assess the radioactive fission product inventory. A high-purity germanium detector is used to measure each sample, and the detector efficiencies are determined prior to sample measurements. Through radiochemical techniques, elements are isolated and recombined into samples with specific fission product ratios. As a result, a matrix-based approach can account for imperfect chemical separations to calculate the proper mixture volumes to obtain intended volatile-to-refractory fission product ratios, or R-values.

07 ISOTOPE AND RADIATION SOURCES↗

DOE OSTI2020

Pushing the limits of the electrochemical window with pulse radiolysis in chloroform

Pulse radiolysis (PR) enables the full redox window of a solvent to be accessed, as it does not require electrodes or electrolyte which limit the potentials accessible in voltammetry measurements. PR in chloroform has the additional possibility to enable reaching highly positive potentials because of its large ionization potential (IP). We report PR experiments demonstrated the formation of the (deuterated) chloroform radical cation CDCl 3 + ˙, identifying it as the source of the broad absorption in the visible part of the spectrum. Results indicated that solutes with a redox potential up to +3.7 V vs. Fc/Fc + can be oxidized by CDCl 3 + ˙, which is far beyond what is possible with electrochemical techniques. Oxidation is not efficient because of rapid geminate recombination with chloride counterions, but also due to rapid decomposition of CDCl 3 + ˙ which limits the yield of otherwise longer-lived free ions. The rapid, 6 ± 3 ns, decomposition, confirmed by two independent experiments, means that a solute must be present at a concentration >100 mM to capture >90% of the free holes formed. Addition of ethene removes the broad, overlapping absorptions from ubiquitous (chlorine atom, solute) complexes created by PR in halogenated solvents enabling clear observation of solute cations. The results also unravel the complex radiation chemistry of chloroform including the large reported value G (–CHCl 3 ) = 12 molecules/100 eV for the decomposition of chloroform molecules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Effect of 60 Co γ-radiation on the tetrafluoroethylene/perfluoro(methyl vinyl ether) copolymer

The chemical and paramagnetic composition of the surface of the tetrafluoroethylene / perfluoro(methyl vinyl ether) copolymer (MFA) was investigated before and after γ-irradiation. The content of fluorine and carbon decreases at radiolysis of MFA, as well as the proportion of oxygen increases as a result of the oxidation reaction of radicals formed during γ-irradiation. The electron paramagnetic resonance (EPR) spectrum of the copolymer irradiated at 77 K contains the radicals ~CF 2 C∙FCF 2 ~ (1) and >CFOC∙F 2 (2). The absence of ~CF 2 C∙F 2 radicals, which can be formed at radiolytic rupture of the C—C bond of the copolymer main chain is associated with the effect of recombination of the resulting radical pair. The EPR spectrum of irradiated MFA at 300 K only recorded radical (1), which transform into peroxide radicals when air oxygen is introduced into the irradiated sample. Thermomechanical curves of native and radiolyzed MFA show three structural states of the amorphous block (glass, transition region, plateau of highly elastic deformation), as well as melting and molecular flow of the copolymer. The radio thermoluminescence curve shows five maxima associated with the emission of light during the recombination of stabilized ions and radicals during heating of the pre-irradiated MFA at 77 K. The temperature of the luminescence peak maximum at 336 K is close to the temperature of the onset of the devitrification of the chains of the amorphous block of MFA on the thermomechanical curve at 341 K. Irradiation leads to an increase in crystallinity of MFA. The heat of fusion of irradiated MFA on the Differential Scanning Calorimeter (DSC) curve is 50 % higher than the fusion heat of native copolymer. During the heating of γ-irradiated MFA, the relative content of COF molecules in the thermal decomposition products increases by an order of magnitude.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Doping with phosphorus reduces anion vacancy disorder in CdSeTe semiconductors enabling higher solar cell efficiency

Doping is used in many pn junction devices, such as polycrystalline solar cells, to increase the strength of the junction field to assist charge carrier collection and thus partially mitigate nonradiative recombination losses. We demonstrate a different doping characteristic for inorganic solar cells: using dopants to reduce charge carrier trapping and electronic band tails. Alloying CdTe with Se to form CdSeTe semiconductor reduced recombination, but CdSeTe has more complex defect states which can limit further efficiency gains due to charge carrier trapping and trap-limited mobility. Doping CdSeTe with P (but not N, As, or Sb in this study) reduces band tails (Urbach energies) and lessens the impact of the near valence band trap states, with ambipolar mobilities improving to >50 cm 2 V −1 s −1 , fill factor increasing from 76% to 79%, and efficiencies increasing by 0.9% absolute. Simulations are used to show how such defect reduction improves performance in the radiative limit.

14 SOLAR ENERGY↗

DOE OSTI2023

Energy and particle balance during plasma detachment in a long-leg divertor configuration

Abstract Comprehensive studies of energy and particle balances in the transition to plasma detachment in an alternative divertor configuration with long outer legs are shown. Numerical simulations are performed with the 2D code suite SOLPS 4.3, using a disconnected double null grid with narrow, tightly baffled long poloidal leg divertors at the outer lower target and outer upper target. A particle count scan is performed using the ‘closed gas box’ model, where the tunable parameter in the simulations is the total number of deuterium particles in the simulation space and all other parameters are held fixed, including a constant input power and trace neon impurity radiation, to assess the physics of the transition to detachment in the system as the particle count increases. Three main aspects of the physics of divertor detachment are addressed: the criteria for the local onset of divertor detachment in each of the divertors, the distribution of heat flux and other plasma parameters between the four divertors as each divertor transitions to detachment, and the role of perpendicular transport in the transition to the detached regime. A synergistic mechanism by which the cross-field transport is reduced by factors associated with the onset of plasma recombination effects is identified. These results are compared to the existing understanding of the physics of the transition to plasma detachment in standard divertors.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2020

Fast Organic Vapor Phase Deposition of Thin Films in Light-Emitting Diodes

Fast deposition of thin films is essential for achieving low-cost, high throughput phosphorescent organic light emitting diode (PHOLED) production. In this work, we demonstrate rapid and uniform growth of semiconductor thin films by organic vapor phase deposition (OVPD). A green PHOLED comprising an emission layer (EML) grown at 50 Å/s with bis[2-(2-pyridinyl-N)phenyl-C](acetylacetonato)iridium(III) (Ir(ppy)2(acac)) doped into 4,4 bis(N-carbazolyl)-1,1zolylld (CBP) exhibits a maximum external quantum efficiency of 20 ± 1%. The morphology, charge transport properties, and radiative efficiency under optical and electrical excitation of the PHOLED EML are investigated as functions of the deposition rate via both experimental and theoretical approaches. The EML shows no evidence for gas phase nucleation of the organic molecules at deposition rates as high as 50 Å/s. However, the roll-off in quantum efficiency at high current progressively increases with deposition rate due to enhanced triplet-polaron annihilation. The roll-off results from accumulation of stress within the PHOLED EML that generates a high density of defect states. Here, the defects, in turn, act as recombination sites for triplets and hole polarons, leading to enhanced triplet-polaron annihilation at high current. We introduce a void nucleation model to describe the film morphology evolution that is observed using electron microscopy.

42 ENGINEERING↗

DOE OSTI2024

Characterization of n-Type Iodine-Doped and Indium-Doped CdTe/Cd-Se-Te Thin Films Fabricated by Close-Spaced Sublimation Epitaxy

In this study, n-type CdTe thin films, specifically iodine-doped CdTe (CdTe:I), indium-doped CdTe (CdTe:In), and indium-doped Cd-Se-Te (CST:In), were synthesized using close-spaced sublimation epitaxy (CSSE). Characterization techniques secondary ion mass spectrometry (SIMS), electron backscatter diffraction (EBSD), Hall-effect measurements, and time-resolved photoluminescence (TRPL) were employed to analyze the chemical, structural, and electronic properties of these materials. The results indicated epitaxial single crystal CSSE films grew on the single crystal substrates, with carrier density ranging from 10^14 - 10^16 cm -3 , and after post-annealing, the minority-carrier lifetimes reach near the radiative limit. Additionally, a preliminary exploration of homojunction structures with an n- type (CdTe:In /CST:In /CdTe:I) /CdTe:P /Cu /Mo configuration was performed. The best device performance was achieved with CdTe:I including CdS aiding in band alignment, resulting in a power conversion efficiency (..eta..) of 2.61% with open circuit voltage (Voc) of 850 mV, fill factor (FF) of 47.8%, and short-circuit current (Jsc) of 6.44 mA/cm 2 . The observed low Jsc and efficiency may be attributed to a buried junction and a poor interface, due to dopant interdiffusion. Consequently, further investigations focusing on interface optimization, diffusion blocking, and reduced recombination through passivation, are crucial to enhancing the efficiency of CSSE CdTe homojunction devices in the future.

cadmium compounds↗