Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “P”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Thin n-i-p silicon solar cell

A space solar cell concept which combines high cell output with low diffusion length damage coefficients is presented for the purpose of reducing solar cell susceptibility to degradation from the radiation environment. High resistivity n-i-p silicon solar cells ranging from upward of 83 micron-cm were exposed to AM0 ultraviolet illumination. It is shown that high resistivity cells act as extrinsic devices under dark conditions and as intrinsic devices under AM0 illumination. Resistive losses in thin n-i-p cells are found to be comparable to those in low resistivity cells. Present voltage limitations appear to be due to generation and recombination in the diffused regions.

Meulenberg, A., Jr.↗
NASA NTRS1981

The 'depletion layer' of amorphous p-n junctions

It is shown that within reasonable approximations for the density of state distribution within the mobility gap of a:Si, a one-to-one correspondence exists between the electric field distribution in the transition region of an amorphous p-n junction and that in the depletion layer of a crystalline p-n junction. Thus it is inferred that the depletion layer approximation which leads to a parabolic potential distribution within the depletion layer of crystalline junctions also constitutes a fair approximation in the case of amorphous junctions. This fact greatly simplifies an analysis of solid-state electronic devices based on amorphous material (i.e., solar cells).

Von Roos, O.↗
NASA NTRS1981

Absolute S- and P-plane polarization efficiencies for high frequency holographic gratings in the VUV

High frequency plane gratings (3500 and 3600 gr/mm) have been holographically ruled and blazed for the VUV spectral region. All gratings were coated with 70 nm Al + 25 nm MgF2. Absolute unpolarized and S- and P-plane polarization efficiencies have been measured for the first and second orders in the 120- to 450-nm spectral region at 18.5 and 30 deg angles of deviation. For deep grooves, anomalous features are more pronounced for the P-plane polarization efficiency than for the S-plane polarization efficiency. Holographic gratings can be tailored to produce high polarization or low polarization in the VUV. For comparison, efficiencies and polarization of the best conventional high frequency gratings were also determined. Measurements show that scattered light is significantly lower for holographic gratings in the VUV when compared with the conventional gratings.

Caruso, A. J.↗
NASA NTRS1982

The P-POD Project

The programmable pilot oriented display (P-POD), a multiprocessor based flight information processing and display unit, is discussed. Communication protocols between the three Z-80 processors inside P-POD are reviewed. The interface between the video processor, P2, and the main processor, P1, was tested. Hardware and software were revised. Data flow between P1 and P2 is illustrated. While running diagnostic routines to exercise the P1/P2 interface at maximum speed an intermittent failure was observed. A check of possible noise sources or race conditions in the hardware did not reveal the source of this failure. Possible software timing problems were also fully investigated. To eliminate the effects of this type of failure a performance monitor routine was used to detect these occasional failures and correct them. The data transmission cycle between P1/P2 is either allowed to continue normal operation or is re-initialized and restarted when an error is detected.

Littlefield, J. A.↗
NASA NTRS1982

Implementation of a C-1 triangular element based on the P-version of the finite element method

The implementation of a computer code CONE (for C(1) continuity) based on the p-version of the finite element method is described. A hierarchic family of triangular finite elements of degree p 5 is used. This family enforces C(1)-continuity across interelement boundaries, and the code is applicable to fourth order partial differential equations in two independent variables, in particular to the biharmonic equation. Applications to several benchmark problems in plate bending are presented. Sample results are examined and compared with theoretical predictions. In particular the analysis of the bending of a rhombic plate shows a significant improvement over othr published results.

Wang, D. W.↗
NASA NTRS1982

Electrical properties of multi p-n junction devices

The electrical properties of multi p-n junction devices are analyzed. It is found that this type of device possesses bistable characteristics similar to that of a Shockley diode and thus provides an alternative realization of devices for switching applications. The inherently greater current gains involved in the operations of such a device yield in principle higher breakover voltages and higher holding currents. Furthermore, the incorporation of heterostructures in this device introduces a new degree of freedom in tailoring their switching characteristics. Multi p-n heterojunction devices operating as SCR lasers were fabricated, and the experimental results are presented.

Katz, J.↗
NASA NTRS1982

Simple phenomenological modeling of transition-region capacitance of forward-biased p-n junction diodes and transistor diodes

The derivation of a simple expression for the capacitance C(V) associated with the transition region of a p-n junction under a forward bias is derived by phenomenological reasoning. The treatment of C(V) is based on the conventional Shockley equations, and simpler expressions for C(V) result that are in general accord with the previous analytical and numerical results. C(V) consists of two components resulting from changes in majority carrier concentration and from free hole and electron accumulation in the space-charge region. The space-charge region is conceived as the intrinsic region of an n-i-p structure for a space-charge region markedly wider than the extrinsic Debye lengths at its edges. This region is excited in the sense that the forward bias creates hole and electron densities orders of magnitude larger than those in equilibrium. The recent Shirts-Gordon (1979) modeling of the space-charge region using a dielectric response function is contrasted with the more conventional Schottky-Shockley modeling.

Lindholm, F. A.↗
NASA NTRS1982

The resolution of P Cygni's stellar wind

The 6 cm radio emission from P Cygni's stellar wind has been resolved using the Very Large Array. The wind is apparently spherically symmetric, and the radial surface brightness distribution agrees with that predicted by the constant velocity, isothermal wind model. The wind temperature is directly determined from the observations to be within 2000 K of 18,000, which is consistent with an effective temperature of 20,000 K for P Cygni. The technique makes it possible to study the adiabatic cooling of the wind, which should be important for most early-type stars but which cannot be recognized through its effects on the radio spectrum. To avoid systematically underestimating fluxes, it is essential to fit models directly to the (u-v) data when observing stellar winds with the VLA.

White, R. L.↗
NASA NTRS1984

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
NASA NTRS1983

A posteriori error indicators for the p-version of the finite element method

The existence of local a posteriori error indicators for the p-version of the finite element method is demonstrated through numerical examples. It is shown that it is possible to construct reliable error indicators from the residuums and tractions which have the same rate of convergence as the strain energy. The error indicators contribution of an element can be estimated by considering only the element and its immediate neighbors. The optimal sequence of p-distributions can be closely followed by the indicators even when there are only a very few elements, the elements vary greatly in size, the polynomial orders vary, the mesh grading is poor, and the smoothness indices and relative errors vary between wide limits.

Dunavant, D. A.↗
NASA NTRS1984

Analysis of the electron-beam-induced current of a polycrystalline p-n junction when the diffusion lengths of the material on either side of a grain boundary differ

The short circuit current generated by the electron beam of a scanning electron microscope in p-n junctions is reduced by enhanced recombination at grain boundaries in polycrystalline material. Frequently, grain boundaries separate the semiconductor into regions possessing different minority carrier life times. This markedly affects the short circuit current I(sc) as a function of scanning distance from the grain boundary. It will be shown theoretically that (1) the minimum of the I(sc) in crossing the grain boundary with the scanning electron beam is shifted away from the grain boundary toward the region with smaller life time (shorter diffusion length), (2) the magnitude of the minimum differs markedly from those calculated under the assumption of equal diffusion lengths on either side of the grain boundary, and (3) the minimum disappears altogether for small surface recombination velocities (s less than 10,000 cm/s). These effects become negligible, however, for large recombination velocities s at grain boundaries. For p-type silicon this happens for s not less than 100,000 cm/s.

Von Roos, O.↗
NASA NTRS1984

Uncertainties about the physical electronics of n(+) and p(+) silicon, with applications for solar cells

After brief surveys of the significance of n(+) and p(+) silicon for the conversion efficiency of solar cells, the work in this paper is concentrated on uncertainties in the characterization of n(+) and p(+) regions. The topics treated include the quantum density states of the majority carrier band and the position of the Fermi level relative to the edge of this band, the resulting force field on the minority carriers accompanying a space dependence of the energy gap narrowing, and the interpretation of measurements of the energy gap narrowing and the minority carrier diffusivity and mobility. The treatment seeks to show how these uncertainties relate to solar cell design and to estimates of attainable conversion efficiency.

Lindholm, F. A.↗
NASA NTRS1985

A theory for the 2f(p) radiation upstream of the earth's bow shock

The mechanism responsible for the radiation observed near the earth bow shock at twice the plasma frequency f(p) is investigated theoretically. A model comprising two three-wave steps and involving Langmuir (L), ion-sound (S), and EM (t) waves is proposed: L + or - S yields L-prime; L + L-prime yields t. This model is shown to be consistent with observations of low-frequency S-like waves (Anderson et al., 1981), and further observational tests are suggested. A critical examination of the theory of Fung et al. (1982) is included, and it is found that an important term in the absorption coefficient was neglected. Correcting this error leads to an intrinsic theoretical brightness-temperature limit of 3 x 10 to the 9th K, well below the observed brightness temperature of the 2 f(p) radiation, about 10 to the 11th K.

Cairns, I. H.↗
NASA NTRS1987

Development of a P-I-N HgCdTe photomixer for laser heterodyne spectrometry

An improved HgCdTe photomixer technology was demonstrated employing a p-i-n photodiode structure. The i-region was near intrinsic n-type HgCdTe; the n-region was formed by B+ ion implantation; and the p-region was formed either by a shallow Au diffusion or by a Pt Schottky barrier. Experimental devices in a back-side illuminated mesa diode configuration were fabricated, tested, and delivered. The best photomixer was packaged in a 24-hour LN2 dewar along with a cooled GaAs FET preamplifier. Testing was performed by mixing black-body radiation with a CO2 laser beam and measuring the IF signal, noise, and signal-to-noise ratio in the GHz frequency range. Signal bandwidth for this photomixer was 1.3 GHz. The heterodyne NEP was 4.4 x 10 to the -20 W/Hz out to 1 GHz increasing to 8.6 x 10 to the -10 W/Hz at 2 GHz. Other photomixers delivered on this program had heterodyne NEPs at 1 GHz ranging from 8 x 10 to the -20 to 4.4 x 10 to the -19 W/Hz and NEP bandwidths from 2 to 4 GHz.

Bratt, Peter R.↗
NASA NTRS1986

The interaction of solar p-modes with a sunspot. I - Observations

Time series of velocity maps of two isolated sunspots and their surroundings were recorded in the Fe I line and the umbral line Ti I. Both 3 and 5 min umbral oscillations were detected at photospheric heights. The 5 min oscillations have reduced amplitude in the umbra, which appears to act as a filter in transmitting selected frequencies in the power spectrum of 5 min p-mode oscillations of the surrounding convection zone. The k-omicron power spectrum of the umbral oscillations shows this selective transmission and also shows a shift of power to longer horizontal wavelengths. This behavior is exhibited by a simple theoretical model of the interaction of p-modes with a sunspot. The 3 min umbral oscillations are concentrated in the dark central part of the umbra. In both sunspots, the kinetic energy density of the 3 min umbral oscillation in the photosphere is much greater than the corresponding kinetic energy density at chromospheric heights measured in other sunspots.

Abdelatif, Toufik E.↗
NASA NTRS1987

Energy transfer of O(D-1) atoms in collision with O(P-3) atoms

Calculations are carried out of the elastic scattering and excitation exchange cross-sections in collisions of O(D-1) and O(P-3) atoms, which determine the degree of thermalization of the O(D-1) atoms produced by dissociative recombination in the thermosphere. The effective elastic scattering and excitation exchange cross-sections are calculated to be 1.55 x 10 to the -15th and 6.25 x 10 to the -16th sq cm, respectively, at a relative collision energy of 1.0 eV. The mutual diffusion coefficient between O(D-1) and O(P-3) atoms is also presented.

Yee, Jeng-Hwa↗
NASA NTRS1987

Effects of milling brominated P-100 graphite fibers

Preliminary procedures have been developed for the ball milling of pristine and brominated P-100 graphite fibers. Because of the lubricative properties of graphite, large ball loads (50 percent by volume) are required. Use of 2-propanol as a milling medium enhances the efficiency of the process. The fibers, when allowed to settle from the milling medium, tend to be preferentially aligned with rather few fibers standing up. Milled, brominated P-100 fibers have resistivities that are indistinguishable from their pristine counterparts, apparently because of loss of bromine. This suggests that bromine would not be the intercalate of choice in applications where milled fibers of this type are required. It was found that brominated graphite fibers are stable in a wide variety of organic solvents.

Gaier, James R.↗
NASA NTRS1987

Development of improved p-type silicon-germanium alloys

Annealing experiments in the temperature range 1100-1275 C have been performed on p-type Si(0.8)Ge(0.2) samples with BP, B(6.5)P, and GaSb material additives. Both electrical resistivity and Seebeck coefficient generally decrease for these samples as annealing temperature is increased, with thermoelectric power factor sometimes being improved by annealing.

Mclane, George↗