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At least 289 records · Page 16

The Selection of Q-Switch for a 350mJ Air-borne 2-micron Wind Lidar

In the process of designing a coherent, high energy 2micron, Doppler wind Lidar, various types of Q-Switch materials and configurations have been investigated for the oscillator. Designing an oscillator with a relatively low gain laser material, presents challenges related to the management high internal circulating fluence due to high reflective output coupler. This problem is compounded by the loss of hold-off. In addition, the selection has to take into account the round trip optical loss in the resonator and the loss of hold-off. For this application, a Brewster cut 5mm aperture, fused silica AO Q-switch is selected. Once the Q-switch is selected various rf frequencies were evaluated. Since the Lidar has to perform in single longitudinal and transverse mode with transform limited line width, in this paper, various seeding configurations are presented in the context of Q-Switch diffraction efficiency. The master oscillator power amplifier has demonstrated over 350mJ output when the amplifier is operated in double pass mode and higher than 250mJ when operated in single pass configuration. The repetition rate of the system is 10Hz and the pulse length 200ns.

Petros, Mulugeta↗

Compact, Highly Stable Ion Atomic Clock

A mercury-ion clock now at the breadboard stage of development (see figure) has a stability comparable to that of a hydrogen-maser clock: In tests, the clock exhibited an Allan deviation of between 2 x 10(exp -13) and 3 x 10(exp -13) at a measurement time of 1 second, averaging to about 10(exp -15) at 1 day. However, the clock occupies a volume of only about 2 liters . about a hundredth of the volume of a hydrogen-maser clock. The ion-handling parts of the apparatus are housed in a sealed vacuum tube, wherein only a getter pump is used to maintain the vacuum. Hence, this apparatus is a prototype of a generation of small, potentially portable high-precision clocks for diverse ground- and space-based navigation and radio science applications. Furthermore, this new ion-clock technology is about 100 times more stable and precise than the rubidium atomic clocks currently in use in the NAV STAR GPS Earth-orbiting satellites. In this clock, mercury ions are shuttled between a quadrupole and a 16-pole linear radio-frequency trap. In the quadrupole trap, the ions are tightly confined and optical state selection from a Hg-202 radio-frequency-discharge ultraviolet lamp is carried out. In the 16-pole trap, the ions are more loosely confined and atomic transitions resonant at frequency of about 40.507 GHz are interrogated by use of a microwave beam at that frequency. The trapping of ions effectively eliminates the frequency pulling caused by wall collisions inherent to gas-cell clocks. The shuttling of the ions between the two traps enables separation of the state-selection process from the clock microwave- resonance process, so that each of these processes can be optimized independently of the other. The basic ion-shuttling, two-trap scheme as described thus far is not new: it has been the basis of designs of prior larger clocks. The novelty of the present development lies in major redesigns of its physics package (the ion traps and the vacuum and optical subsystems) to effect the desired reduction of size to a volume of no more than a couple of liters. The redesign effort has included selection of materials for the vacuum tube, ion trap, and ultraviolet windows that withstand bakeout at a temperature of approx.450 C in preparation for sealing the tube to contain the vacuum. This part of the redesign effort follows the approach taken in the development of such other vacuum-tube electronic components as flight traveling- wave-tube amplifiers having operational and shelf lives as long as 15 years. The redesign effort has also included a thorough study of residual-gas-induced shifts of the ion-clock frequency and a study of alternative gases as candidates for use as a buffer gas within the sealed tube. It has been found that neon is more suitable than is helium, which has been traditionally used for this purpose, in that the pressure-induced frequency pulling by neon is between a third and a half of that of helium. In addition, because neon diffuses through solids much more slowly than does helium, the loss of neon by diffusion over the operational lifetime is expected to be negligible.

Prestage, John↗

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Hu, Qing↗

Wind velocity measurement accuracy with highly stable 12 mJ/pulse high repetition rate CO2 laser master oscillator power amplifier

A coherent CO2 lidar operating in a master oscillator power amplifier configuration (MOPA) is described for both ground-based and airborne operation. Representative data taken from measurements against stationary targets in both the ground-based and airborne configurations are shown for the evaluation of the frequency stability of the system. Examples of data are also given which show the results of anomalous system operation. Overall results demonstrate that velocity measurements can be performed consistently to an accuracy of + or - 0.5 m/s and in some cases + or - 0.1 m/s.

Bilbro, James W.↗

Operating Klystrons at the Spallation Neutron Source – Two Decades of Perspective

Klystron amplifiers have been operated at the Spallation Neutron Source (SNS) in support of the user program since 2006. SNS tubes have amassed over 100,000 hours of high-voltage and filament-on time providing a significant source of operational statistics for high power, high-duty klystrons. Additionally, the SNS Radiofrequency (RF) Systems Group has developed operational methods to mitigate specific reliability challenges, such as cathode arcing and output power instability. Despite much progress, many of these challenges persist, prompting the SNS to update the procedures used for klystron processing as well as develop a higher throughput test stand.

Moss, John [ORNL] (ORCID:0009000085988916)↗

Development and Operation of PIP-II Injector Test, SSR1 Cryomodule, 325 MHz Amplifiers

The PIP-II Injector Test (PIP2IT) has successfully accelerated ionized hydrogen up to 17MeV through a superconducting, single spoke resonator (SSR1) cryomodule at Fermi National Accelerator Laboratory (FNAL). Each of the SSR1 cavities is tuned to 325MHz and requires up to 6 kW of RF power to accelerate 2mA of ionized hydrogen at the design gradients. RF power amplifiers, specialized for SRF cavity beam operations, were designed by Bhabha Atomic Research Center (BARC) and constructed in a collaboration between the BARC in Mumbai, India and the Electronics Corporation of India Limited (ECIL) in Hyderabad, India. The RF amplifiers meet the specifications and requirements mutually approved between BARC and FNAL. They operate at 325 MHz with a linear power output of 7 kW in both CW and pulse mode. The amplifiers are compatible with the FNAL accelerator personnel safety system and the cavity protection interlocks. Access to controls and internal diagnostic instrumentation are compatible with EPICS control standards. This paper gives details about RF power amplifier development within the Department of Atomic Energy (DAE), India and the operational details with PIP2IT at FNAL.

43 PARTICLE ACCELERATORS↗

Power-Amplifier Module for 145 to 165 GHz

A power-amplifier module that operates in the frequency range of 145 to 165 GHz has been designed and constructed as a combination of (1) a previously developed monolithic microwave integrated circuit (MMIC) power amplifier and (2) a waveguide module. The amplifier chip was needed for driving a high-electron-mobility-transistor (HEMT) frequency doubler. While it was feasible to connect the amplifier and frequency-doubler chips by use of wire bonds, it was found to be much more convenient to test the amplifier and doubler chips separately. To facilitate separate testing, it was decided to package the amplifier and doubler chips in separate waveguide modules. Figure 1 shows the resulting amplifier module. The amplifier chip was described in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11, (November 2003), page 49. To recapitulate: This is a three-stage MMIC power amplifier that utilizes HEMTs as gain elements. The amplifier was originally designed to operate in the frequency range of 140 to 170 GHz. The waveguide module is based on a previously developed lower frequency module, redesigned to support operation in the frequency range of 140 to 220 GHz. Figure 2 presents results of one of several tests of the amplifier module - measurements of output power and gain as functions of input power at an output frequency of 150 GHz. Such an amplifier module has many applications to test equipment for power sources above 100 GHz.

Samoska, Lorene↗

Average power effects in parametric oscillators and amplifiers

Average power effects relative to the operation of parametric oscillators and amplifiers have been calculated. Temperature gradients have been calculated for both radial and longitudinal heat extraction. In many instances, the thermal load on a parametric oscillator is higher than the thermal load on a parametric amplifier with the same pump power. Having one or both these wavelengths resonant increases the chances that a generated photon will be absorbed by the nonlinear crystal. Temperature profiles and thermal diffusion time constants have been calculated for Gaussian beams, given the heat-deposition rate. With radical heat extraction the temperature profile can be expressed in a power series or approximated by a Gaussian distribution function.

Barnes, Norman P.↗

Power-Hardware-in-the-Loop Interfaces for Inverter-Based Microgrid Experiments Including Transitions

Microgrids continue to proliferate, particularly those that rely on inverter-based resources as the microgrid's voltage and frequency leader. Hardware-in-the-loop simulations can de-risk microgrid deployments, and therefore we need power-hardware-in-the-loop (PHIL) interfaces for grid-forming (GFM) inverters to enable simulations of seamless transitions between islanded and grid-connected operation. Such interfaces are particularly challenging when the inverters need to switch modes, i.e., between grid-following (GFL) and GFM as the microgrid transitions between grid-connected and islanded operation. This paper presents two PHIL interfaces for such microgrids and the preliminary experimental results.

experiments↗

Power Hardware-in-the-Loop Interfaces for Inverter-Based Microgrid Experiments Including Transitions: Preprint

Microgrids continue to proliferate, particularly those that rely on inverter-based resources as the microgrid's voltage and frequency leader. Hardware-in-the-loop (HIL) simulations can de-risk microgrid deployments, and therefore we need power-hardware-in-the-loop (PHIL) interfaces for grid-forming (GFM) inverters to enable simulations of seamless transitions between islanded and grid-connected operation. Such microgrid interfaces are particularly challenging to model when the inverters need to switch modes, i.e., between grid-following (GFL) and GFM as the microgrid transitions between grid-connected and islanded operation. This paper presents two PHIL interfaces for such microgrids and the preliminary experimental results: One interface is suitable for those who have access to a power amplifier that can operate as a controllable current source, and the other is for those who need a solution that uses a voltage-mode power amplifier.

battery energy storage system↗

Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band

Closely following the development reported in the immediately preceding article, three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200-GHz frequency band have been designed and are under construction at this writing. The active devices in these amplifiers are InP high-electron-mobility transistors (HEMTs). These amplifiers (see figure) are denoted the LSLNA150, the LSA200, and the LSA185, respectively. Like the amplifiers reported in the immediately preceding article, the LSLNA150 (1) is intended to be a prototype of low-noise amplifiers (LNAs) to be incorporated into spaceborne instruments for sensing cosmic microwave background radiation and (2) has potential for terrestrial use in electronic test equipment, passive millimeter-wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The HEMTs in this amplifier were fabricated according to 0.08- m design rules of a commercial product line of InP HEMT MMICs at HRL Laboratories, LLC, with a gate geometry of 2 fingers, each 15 m wide. On the basis of computational simulations, this amplifier is designed to afford at least 15 dB of gain, with a noise figure of no more than about 6 dB, at frequencies from 120 to 160 GHz. The measured results of the amplifier are shown next to the chip photo, with a gain of 16 dB at 150 GHz. Noise figure work is ongoing. The LSA200 and the LSA185 are intended to be prototypes of transmitting power amplifiers for use at frequencies between about 180 and about 200 GHz. These amplifiers have also been fabricated according to rules of the aforesaid commercial product line of InP HEMT MMICs, except that the HEMTs in these amplifiers are characterized by a gate geometry of 4 fingers, each 37 m wide. The measured peak performance of the LSA200 is characterized by a gain of about 1.4 dB at a frequency of 190 GHz; the measured peak performance of the LSA185 is characterized by a gain of about 2.7 dB at a frequency of 181 GHz. The measured gain results of each chip are shown next to their respective photos.

Samoska, Lorene↗

Ka-Band Waveguide Hybrid Divider with Unequal and Arbitrary Power Output Ratio

One or more embodiments of the present invention describe an apparatus and method to combine unequal powers. The apparatus includes a first input port, a second input port, and a combiner. The first input port is operably connected to a first power amplifier and is configured to receive a first power from the first power amplifier. The second input port is operably connected to a second power amplifier and is configured to receive a second power from the second power amplifier. The combiner is configured to simultaneously receive the first power from the first input port and the second power from the second input port. The combiner is also configured to combine the first power and second power to produce a maximized power. The first power and second power are unequal.

Simons, Rainee N.↗

Low Noise Amplifiers for 140 Ghz Wide-Band Cryogenic Receivers

We report S-parameter and noise measurements for three different Indium Phosphide 35-nanometer-gate-length High Electron Mobility Transistor (HEMT) Low Noise Amplifier (LNA) designs operating in the frequency range centered on 140 gigahertz. When packaged in a Waveguide Rectangular-6.1 waveguide housing, the LNAs have an average measured noise figure of 3.0 decibels - 3.6 decibels over the 122-170 gigahertz band. One LNA was cooled to 20 degrees Kelvin and a record low noise temperature of 46 Kelvin, or 0.64 decibels noise figure, was measured at 152 gigahertz. These amplifiers can be used to develop receivers for instruments that operate in the 130-170 gigahertz atmospheric window, which is an important frequency band for ground-based astronomy and millimeter-wave imaging applications.

High Electron Mobility Transistors (HEMTs)↗

X-Band, 17-Watt Solid-State Power Amplifier

An advanced solid-state power amplifier that can generate an output power of as much as 17 W at a design operating frequency of 8.4 GHz has been designed and constructed as a smaller, lighter, less expensive alternative to traveling-wave-tube X-band amplifiers and to prior solid-state X-band power amplifiers of equivalent output power. This amplifier comprises a monolithic microwave integrated circuit (MMIC) amplifier module and a power-converter module integrated into a compact package (see Figure 1). The amplifier module contains an input variable-gain amplifier (VGA), an intermediate driver stage, a final power stage, and input and output power monitors (see Figure 2). The VGA and the driver amplifier are 0.5-m GaAs-based metal semiconductor field-effect transistors (MESFETs). The final power stage contains four parallel high-efficiency, GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The gain of the VGA is voltage-variable over a range of 10 to 24 dB. To provide for temperature compensation of the overall amplifier gain, the gain-control voltage is generated by an operational-amplifier circuit that includes a resistor/thermistor temperature-sensing network. The driver amplifier provides a gain of 14 dB to an output power of 27 dBm to drive the four parallel output PHEMTs, each of which is nominally capable of putting out as much as 5 W. The driver output is sent to the input terminals of the four parallel PHEMTs through microstrip power dividers; the outputs of these PHEMTs are combined by microstrip power combiners (which are similar to the microstrip power dividers) to obtain the final output power of 17 W.

Mittskus, Anthony↗

High Power SiGe X-Band (8-10 GHz) Heterojunction Bipolar Transistors and Amplifiers

Limited by increased parasitics and thermal effects as the device size becomes large, current commercial SiGe power HBTs are difficult to operate at X-band (8-12 GHz) with adequate power added efficiencies at high power levels. We found that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, which thus permits these devices to be efficiently operated at X-band. In this paper, we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8-10 GHz. At 10 GHz, 22.5 dBm (178 mW) RF output power with concurrent gain of 7.32 dB is measured at the peak power-added efficiency of 20.0% and the maximum RF output power of 24.0 dBm (250 mW) is achieved from a 20 emitter finger SiGe power HBT. Demonstration of single-stage X-band medium-power linear MMIC power amplifier is also realized at 8 GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7 dB, a maximum output power of 23.4 dBm and peak power added efficiency of 16% is achieved from the power amplifier. The MMIC exhibits very low distortion with third order intermodulation (IM) suppression C/I of -13 dBc at output power of 21.2 dBm and over 20dBm third order output intercept point (OIP3).

Ma, Zhenqiang↗

Project Echo: 961-Mc Lower - Sideband Up - Converter for Satellite-Tracking Radar

A 961-Mc lower-sideband up-converter was specially designed to serve as preamplifier for the satellite-tracking radar used in Project Echo. The amplifier and its power supply are separately boxed and are installed directly behind the tracking antenna. The amplifier has been functioning most satisfactorily and has been used in routine manner to track the Echo satellite from horizon to horizon. This paper describes the design considerations, and details the special steps taken to ensure that the amplifier met the particular system needs of low noise, absolute stability, insensitivity to temperature fluctuations, and high input-power level before the onset of gain compression. The satisfactory operation of this amplifier confirms the great potentiality of parametric amplifiers as stable, low-noise, high-frequency receivers.

Uenohara, M.↗

Broadband RF-distribution amplifier

Radio frequency amplifier to distribute reference frequencies within communications systems and provide automatic gain control with low phase distortion is described. Use of photocell in electronic circuit to produce desired conditions is explained. Operation of entire amplifier circuit is analyzed.

Lutes, G. F., Jr.↗