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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16

All sources NASA NTRS DOE OSTI

DOE OSTI2020

Reversible magnetism transition at ferroelectric oxide heterointerface

Oxide heterointerface is a platform to create unprecedented two-dimensional electron gas, superconductivity and ferromagnetism, arising from a polar discontinuity at the interface. In particular, the ability to tune these intriguing effects paves a way to elucidate their fundamental physics and to develop novel electronic/magnetic devices. Here, we report for the first time that a ferroelectric polarization screening at SrTiO 3 /PbTiO 3 interface is able to drive an electronic construction of Ti atom, giving rise to room-temperature ferromagnetism. Surprisingly, such ferromagnetism can be switched to antiferromagnetism by applying a magnetic field, which is reversible. A coupling of itinerant electrons with local moments at interfacial Ti 3d orbital was proposed to explain the magnetism. The localization of the itinerant electrons under a magnetic field is responsible for the suppression of magnetism. These findings provide new insights into interfacial magnetism and their control by magnetic field relevant interfacial electrons promising for device applications.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Optical control of topological memory based on orbital magnetization

Under suitable conditions, some twisted graphene multilayers and transition-metal dichalcogenides become Chern insulators, exhibiting the anomalous quantum Hall effect and orbital magnetization due to spontaneous valley polarization. We study the interaction of a Chern insulator with circularly polarized light. Here, the interaction energy contains an antisymmetric term that couples to the helicity of incident light. For a two-band Chern insulator, this term is expressed as an integral involving the Berry curvature of the system. Taking advantage of this interaction, we propose an experimental protocol for switching topological memory based on orbital magnetization by circularly polarized light. Moreover, two laser beams of opposite circular polarization can nucleate domains of opposite magnetization and thus produce an optically configurable domain wall carrying topologically protected chiral edge modes.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Edge supercurrent reveals competition between condensates in a Weyl superconductor

In topological materials, the edge states are readily distinguished from the bulk states. The situation where a topological semimetal becomes superconducting so that Cooper pairs occupy both the bulk and the edge states is not well understood. In particular, we do not know if we can force their pairing symmetries to be different. Here we show that, when supercurrent is injected into the superconducting Weyl semimetal MoTe 2 from Nb contacts, the invasive s-wave pairing potential from Nb is incompatible with the intrinsic Cooper pair condensate in MoTe 2 . This incompatibility leads to strong stochasticity in the switching current and an unusual anti-hysteretic behaviour in the current–voltage loops. There is also an asymmetry in the edge oscillations where, as the magnetic field crosses zero, the phase noise switches from one with a noisy spectrum to one that is noise free. Furthermore, using the noise spectrum as a guide, we track the anomalous features to field-induced switching of the device gap function between s-wave symmetry and the unconventional symmetry intrinsic to MoTe 2 . We infer that the behaviour of the gap function along the edges is different from that in the bulk.

Superconducting properties and materials↗

DOE OSTI2021

Nitride-Oxide-Metal Heterostructure with Self-Assembled Core–Shell Nanopillar Arrays: Effect of Ordering on Magneto-Optical Properties

Magneto-optical (MO) coupling incorporates photon-induced change of magnetic polarization that can be adopted in ultrafast switching, optical isolators, mode convertors, and optical data storage components for advanced optical integrated circuits. However, integrating plasmonic, magnetic, and dielectric properties in one single material system poses challenges since one natural material can hardly possess all these functionalities. Here, co-deposition of a three-phase heterostructure composed of a durable conductive nitride matrix with embedded core–shell vertically aligned nanopillars, is demonstrated. Additionally, the unique coupling between ferromagnetic NiO core and atomically sharp plasmonic Au shell enables strong MO activity out-of-plane at room temperature. Further, a template growth process is applied, which significantly enhances the ordering of the nanopillar array. The ordered nanostructure offers two schemes of spin polarization which result in stronger antisymmetry of Kerr rotation. The presented complex hybrid metamaterial platform with strong magnetic and optical anisotropies is promising for tunable and modulated all-optical-based nanodevices.

36 MATERIALS SCIENCE↗

NASA NTRS1996

Flow rate logging seepage meter

An apparatus for remotely measuring and logging the flow rate of groundwater seepage into surface water bodies. As groundwater seeps into a cavity created by a bottomless housing, it displaces water through an inlet and into a waterproof sealed upper compartment, at which point, the water is collected by a collection bag, which is contained in a bag chamber. A magnet on the collection bag approaches a proximity switch as the collection bag fills, and eventually enables the proximity switch to activate a control circuit. The control circuit then rotates a three-way valve from the collection path to a discharge path, enables a data logger to record the time, and enables a pump, which discharges the water from the collection bag, through the three-way valve and pump, and into the sea. As the collection bag empties, the magnet leaves the proximity of the proximity switch, and the control circuit turns off the pump, resets the valve to provide a collection path, and restarts the collection cycle.

Reay, William G.↗

DOE OSTI2023

Direct observation of the magnetic anisotropy of an Fe(II) spin crossover molecular thin film

Abstract In this work, we provide clear evidence of magnetic anisotropy in the local orbital moment of a molecular thin film based on the SCO complex [Fe(H 2 B(pz) 2 ) 2 (bipy)] (pz = pyrazol−1−yl, bipy = 2,2′−bipyridine). Field dependent x-ray magnetic circular dichroism measurements indicate that the magnetic easy axis for the orbital moment is along the surface normal direction. Along with the presence of a critical field, our observation points to the existence of an anisotropic energy barrier in the high-spin state. The estimated nonzero coupling constant of ∼2.47 × 10 −5 eV molecule −1 indicates that the observed magnetocrystalline anisotropy is mostly due to spin–orbit coupling. The spin- and orbital-component anisotropies are determined to be 30.9 and 5.04 meV molecule −1 , respectively. Furthermore, the estimated g factor in the range of 2.2–2.45 is consistent with the expected values. This work has paved the way for an understanding of the spin-state-switching mechanism in the presence of magnetic perturbations.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2021

Probing exchange bias at the surface of a doped ferrimagnetic insulator

With the realization of stress-induced perpendicular magnetic anisotropy, efficient spin-orbit torque switching, and room temperature topological Hall effect, interest in rare earth iron garnets has been revived in recent years for their potential in spintronic applications. In this study, we investigate the magnetic properties of micrometer-thick Bi and Ga substituted thulium iron garnets (BiGa:TmIG) grown by the liquid-phase epitaxy method. Above the magnetization compensation (MC) temperature, anomalous triple hysteresis is observed in BiGa:TmIG/Pt heterostructures by anomalous Hall effect measurements. X-ray magnetic circular dichroism and energy dispersive spectroscopy measurements reveal its origin as an internal exchange bias (EB) effect arising from inhomogeneities localized at the surface of the film. Possibly depending on the difference in thickness and defect realization of the EB layer, two types of magnetization reversal mechanisms, namely, the Stoner-Wohlfarth type and the reversible domain-wall motion type, are observed. Furthermore, our results show that rich meta-magnetic phases exist in garnets close toMC, which can be robustly tuned by chemical composition engineering and conveniently probed by electrical transport measurements.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition

Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing local switching, which provides an opportunity to tune the electronic and magnetic state of the device by applying voltage. Here we explore the magnetotransport properties in the ferromagnetic oxide La 0.7 ⁢Sr 0.3 ⁢MnO 3 (LSMO) during the electrical triggering of an intrinsic metal-insulator transition (MIT), which produces volatile resistive switching. This switching occurs in a characteristic spatial pattern, i.e., the formation of a high-resistance barrier perpendicular to the current flow, enabling an electrically actuated ferromagnetic-paramagnetic-ferromagnetic phase separation. At the threshold voltage of the MIT triggering, both anisotropic and colossal magnetoresistances exhibit anomalies including a large increase in magnitude and a sign flip. Computational analysis revealed that these anomalies originate from the coupling between the switching-induced phase separation state and the intrinsic magnetoresistance of LSMO. Furthermore, this work demonstrates that driving the MIT material into an out-of-equilibrium resistive switching state provides the means for electrical control of the magnetotransport phenomena.

Complex oxides↗

DOE OSTI2023

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co] N

Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption. Several recent studies have revealed efficient out-of-plane spin-orbit torques (SOTs) in a variety of materials for field-free type-z SOT switching. Here, we report on the corresponding type-x configuration, showing significant in-plane unconventional spin polarizations from sputtered ultrathin [Pt/Co] N , which are either highly textured on single crystalline MgO substrates or randomly textured on SiO 2 coated Si substrates. The unconventional spin currents generated in the low-dimensional Co films result from the strong orbital magnetic moment, which has been observed by X-ray magnetic circular dichroism (XMCD) measurement. The x-polarized spin torque efficiency reaches up to −0.083 and favors complete field-free switching of CoFeB magnetized along the in-plane charge current direction. Micromagnetic simulations additionally demonstrate its lower switching current than type-y switching, especially in narrow current pulses. Our work provides additional pathways for electrical manipulation of spintronic devices in the pursuit of high-speed, high-density, and low-energy non-volatile memory.

42 ENGINEERING↗

NASA NTRS2012

Battery system and method for sensing and balancing the charge state of battery cells

A battery system utilizes a plurality of transformers interconnected with the battery cells. The transformers each have at least one transformer core operable for magnetization in at least a first magnetic state with a magnetic flux in a first direction and a second magnetic state with a magnetic flux in a second direction. The transformer cores retain the first magnetic state and the second magnetic state without current flow through said plurality of transformers. Circuitry is utilized for switching a selected transformer core between the first and second magnetic states to sense voltage and/or balance particular cells or particular banks of cells.

Davies, Francis J.↗

NASA NTRS1970

Laminar wave train structure of collisionless magnetic slow shocks

The laminar wave train structure of collisionless magnetic slow shocks is investigated using two fluid hydromagnetics with ion cyclotron radius dispersion. For shock strengths less than the maximally strong switch-off shock, in the shock leading edge dispersive steepening forms a magnetic field gradient, while in the downstream flow dispersive propagation forms a trailing wave train; dispersion scale lengths are the ion inertial length if beta is smaller than 1 and the ion cyclotron radius if beta is greater than 1. In the switch-off slow shock leading edge, dispersion only produced rotations of the magnetic field direction; the gradient of the magnetic field magnitude, and hence the shock steepening length, is determined solely by resistive diffusion. The switch-off shock structure consists of a long trailing of magnetic rotations which are gradually damped by resistivity.

Coroniti, F. V.↗

NASA NTRS1972

Ferromagnetic-fluid logic devices

Logic element switches flows of low pressure process control fluid in fluidics assemblies. Device operates both electrically and fluidically and is controlled by passing permanent magnet or electromagnet over elements, thus providing proximity switching functions.

Makowski, M. J.↗

DOE OSTI2021

Self-biased magnetoelectric switching at room temperature in three-phase ferroelectric–antiferromagnetic–ferrimagnetic nanocomposites

Magnetoelectric systems could be used to develop magnetoelectric random access memory and microsensor devices. One promising system is the two-phase 3-1-type multiferroic nanocomposite in which a one-dimensional magnetic column is embedded in a three-dimensional ferroelectric matrix. However, it suffers from a number of limitations including unwanted leakage currents and the need for biasing with a magnetic field. Here we show that the addition of an antiferromagnet to a 3-1-type multiferroic nanocomposite can lead to a large, self-biased magnetoelectric effect at room temperature. Our three-phase system is composed of a ferroelectric Na 0.5 Bi 0.5 TiO 3 matrix in which ferrimagnetic NiFe 2 O 4 nanocolumns coated with antiferromagnetic p-type NiO are embedded. This system, which is self-assembled, exhibits a magnetoelectric coefficient of up to 1.38 × 10 –9 s m –1 , which is large enough to switch the magnetic anisotropy from the easy axis (K eff = 0.91 × 10 4 J m –3 ) to the easy plane (K eff = –1.65 × 10 4 J m –3 ).

42 ENGINEERING↗

NASA NTRS1974

Electric and magnetic field observations during a substorm on February 24, 1970

Description of a series of electric field measurements obtained from the Injun 5 satellite and simultaneous magnetic disturbances observed in the interplanetary medium and on the ground during a magnetic substorm. The substorm analyzed took place on Feb. 24, 1970. Prior to the onset of the substorm, a greatly enhanced antisunward plasma flow was observed over the polar cap. The enhanced plasma flow occurred about 30 minutes after a switch in the direction of the interplanetary magnetic field from northward to southward. The electric fields across the polar cap immediately before and during the substorm were essentially unchanged, and it is thus indicated that an enhancement in the ionospheric conductivity rather than the electric field must be responsible for the large increase in the auroral electrojet current during the substorm.

Gurnett, D. A.↗

NASA NTRS1976

Analog data recording on MnBi film

High coercive-force films have reduced sensitivity to wall-domain motion and can record at higher spatial frequencies. Tracks switched in high coercive-force films have track widths independent of applied magnetic field. Upper spatial frequency limit recorded by Curie-point switching in alternating field is greater.

Guisinger, J. E.↗

DOE OSTI2021

Fully integrated multi-phase buck converter with coupled air core inductors

A multi-phase buck switching converter having grouped pairs of phases, each phase using two magnetically coupled air-core inductors. For each group, a first driver circuit controlling switching of a first power transistor switching circuit coupled to a first air-core inductor output for driving an output load at the first phase. A second driver circuit controlling switching of a second power transistor switching circuit coupled to a second air-core inductor output for driving said output load at the second phase. The first and second phases are spaced 180° apart. The coupled air-core inductors per group of such orientation, separation distance and mutual inductance polarity relative to each other such that magnetic coupling between the two or more inductors at each phase results in a net increase in effective inductance per unit volume. Each air-core inductor is a metal slab of defined length, height and thickness formed using back-end-of-line semiconductor manufacturing process.

Zhang, Xin↗

DOE OSTI2021

Single‐Domain Multiferroic Array‐Addressable Terfenol‐D (SMArT) Micromagnets for Programmable Single‐Cell Capture and Release

Abstract Programming magnetic fields with microscale control can enable automation at the scale of single cells ≈10 µm. Most magnetic materials provide a consistent magnetic field over time but the direction or field strength at the microscale is not easily modulated. However, magnetostrictive materials, when coupled with ferroelectric material (i.e., strain‐mediated multiferroics), can undergo magnetization reorientation due to voltage‐induced strain, promising refined control of magnetization at the micrometer‐scale. This work demonstrates the largest single‐domain microstructures (20 µm) of Terfenol‐D (Tb 0.3 Dy 0.7 Fe 1.92 ), a material that has the highest magnetostrictive strain of any known soft magnetoelastic material. These Terfenol‐D microstructures enable controlled localization of magnetic beads with sub‐micrometer precision. Magnetically labeled cells are captured by the field gradients generated from the single‐domain microstructures without an external magnetic field. The magnetic state on these microstructures is switched through voltage‐induced strain, as a result of the strain‐mediated converse magnetoelectric effect, to release individual cells using a multiferroic approach. These electronically addressable micromagnets pave the way for parallelized multiferroics‐based single‐cell sorting under digital control for biotechnology applications.

Khojah, Reem↗

DOE OSTI2021

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy-efficient information processing of the brain. While non-volatile memory (NVM) based on resistive switches, phase-change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi-terminal device concepts are required for more sophisticated bio-realistic functions. Of particular interest are memtransistors based on low-dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi-terminal NVM devices including dual-gated floating-gate memories, dual-gated ferroelectric transistors, and dual-gated van der Waals heterojunctions. Further, the different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase-changes properties of nanomaterials. Finally, strategies for achieving wafer-scale integration of memtransistors and multi-terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.

36 MATERIALS SCIENCE↗