Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature
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Chemistry↗
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Taste Perception of Branched Maltooligosaccharides
Oral processing of starch generates linear and branched maltooligosaccharides (MOS). This study investigates the impact of branching and the degree of polymerization (DP) on MOS taste detection. Three branched MOS samples (A−C) were enzymatically prepared from gelatinized waxy corn starch and characterized using reducing-end assays, MALDI-TOF MS, β-amylase hydrolysis, and GC-MS linkage analysis. Samples A, B, and C had average DPs of 6, 10, and 18, respectively, with α-1,6 branch points comprising 9−13% of glycosidic bonds; linear MOS were negligible. In triangle tests, participants evaluated MOS samples and a maltose control at 75 mM, with and without lactisole, a sweet receptor inhibitor. All samples were detectable without lactisole (d′ = 1.81−2.9; p < 0.05), but not with lactisole (d′ = 0−0.61; p > 0.05). These findings demonstrate that α-1,6 branching enables MOS detection via the sweet receptor, not the putative “starchy” receptor, underscoring the importance of glycosidic structure in carbohydrate taste perception.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Unraveling the Mechanism of Interfacial Charge Transfer and Photoresponsivity of WS 2 Quantum Dots/MoS 2 (0D–2D) Heterostructure-Based Transistors
To assess the efficacy of a mixed-dimensional van der Waals (vdW) heterostructure in modulating the optoelectronic responses of nanodevices, the charge transport properties of the transition-metal dichalcogenide (TMD)-based heterostructure comprising zero-dimensional (0D) WS 2 quantum dots (QDs) and two-dimensional (2D) MoS 2 flakes are critically analyzed. Herein, a facile strategy was materialized in developing an atomically thin phototransistor assembled from mechanically exfoliated MoS 2 and WS 2 QDs synthesized using a one-pot hydrothermal route. The amalgamated photodetectors exhibited a high responsivity of ∼8000 A/W at an incident power of 0.05 nW of white light, surpassing that of the pristine MoS 2 devices. Furthermore, the detectivity of pristine MoS 2 , which was on the order of 10 10 , increased to 10 12 Jones for the WS 2 QDs/MoS 2 heterostructure photodetector, outperforming other WS 2 -based materials. The quasiparticle band gap and density of states (DOS) are further analyzed to elucidate the photophysics of the WS 2 QD/MoS 2 hybrid assembly. The difference in the work function between MoS 2 and WS 2 QDs gives rise to an electric field across the 0D–2D interface, facilitating effective charge separation and migration and contributing to the enhancement of photoresponsivity. The analysis of optical responses using density functional theory (DFT) revealed stronger absorption and less reflection over a broader spectrum of wavelengths for the heterostructure compared to the pristine materials. The estimated optical conductivity aligns well with the experimentally predicted maximum photoresponsivity under visible light, which is attributed to the high absorbance of 2D MoS 2 . In conclusion, combining diverse spectroscopic and imaging techniques with quantum simulation provides insights that clarify the pertinence of 0D–2D TMDs in designing phototransistors.
WS2 QDs/MoS2 heterostructure↗
Observation of an intermediate state during lithium intercalation of twisted bilayer MoS2
Abstract Lithium intercalation of MoS 2 is generally believed to introduce a phase transition from H phase (semiconducting) to T phase (metallic). However, during the intercalation process, a spatially sharp boundary is usually formed between the fully intercalated T phase MoS 2 and non-intercalated H phase MoS 2 . The intermediate state, i.e ., lightly intercalated H phase MoS 2 without a phase transition, is difficult to investigate by optical-microscope-based spectroscopy due to the narrow size. Here, we report the stabilization of the intermediate state across the whole flake of twisted bilayer MoS 2 . The twisted bilayer system allows the lithium to intercalate from the top surface and enables fast Li-ion diffusion by the reduced interlayer interaction. The E 2g Raman mode of the intermediate state shows a peak splitting behavior. Our simulation results indicate that the intermediate state is stabilized by lithium-induced symmetry breaking of the H phase MoS 2 . Our results provide an insight into the non-uniform intercalation during battery charging and discharging, and also open a new opportunity to modulate the properties of twisted 2D systems with guest species doping in the Moiré structures.
36 MATERIALS SCIENCE↗
One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods
Abstract We present the fabrication of a MoS 2−x Se x thin film from a co-sputtering process using MoS 2 and MoSe 2 commercial targets with 99.9% purity. The sputtering of the MoS 2 and MoSe 2 was carried out using a straight and low-cost magnetron radio frequency sputtering recipe to achieve a MoS 2−x Se x phase with x = 1 and sharp interface formation as confirmed by Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, and cross-sectional scanning electron microscopy. The sulfur and selenium atoms prefer to distribute randomly at the octahedral geometry of molybdenum inside the MoS 2−x Se x thin film, indicated by a blue shift in the A 1g and E 1 g vibrational modes at 355 cm −1 and 255 cm −1 , respectively. This work is complemented by computing the thermodynamic stability of a MoS 2−x Se x phase whereby density functional theory up to a maximum selenium concentration of 33.33 at.% in both a Janus-like and random distribution. Although the Janus-like and the random structures are in the same metastable state, the Janus-like structure is hindered by an energy barrier below selenium concentrations of 8 at.%. This research highlights the potential of transition metal dichalcogenides in mixed phases and the need for further exploration employing low-energy, large-scale methods to improve the materials’ fabrication and target latent applications of such structures.
36 MATERIALS SCIENCE↗
Aging studies on chemical vapor deposition and mechanically exfoliated molybdenum disulfide flakes heated in ambient air
The structural integrity of atomically thin two-dimensional molybdenum disulfide (MoS 2 ) is crucial for high-temperature applications, including nanoelectronics and optoelectronics. This study explores the structural stability and electrical performance, under extended thermal exposure in air, of MoS 2 flakes synthesized via chemical vapor deposition (CVD) and mechanical exfoliation. The MoS 2 flakes, both CVD-grown and mechanically exfoliated, were subjected to heating at 200 °C with a relative humidity of 60(±5)% for a prolonged period and investigated with atomic force microscopy and Raman spectroscopy. This study shows that CVD-grown flakes developed noticeable cracks after prolonged heating, whereas mechanically exfoliated flakes mostly retained their structural integrity. Also, both types of flakes showed a decrease in layer thickness and lateral size over time, with mechanically exfoliated flakes exhibiting a comparatively smaller reduction in substrate coverage area. In addition, MoS 2 -based two-terminal devices were subjected to heating at 150 °C for approximately 1100 h, and their electrical characterization revealed a steady rise in current during constant voltage (5 V) conditions. This study enhances our understanding of MoS 2 stability and provides guidance for improving the reliability of MoS 2 -based devices in high-temperature electronic applications.
2D materials↗
Comparison Study of Upper Subcritical Limits Derived Using Sensitivity/Uncertainty Tools Case Studies of Benchmarks and Applications
Neutron transport methods used to establish subcriticality require validation by comparison to critical experiments considered to be benchmarks. Whisper is a sensitivity/uncertainty analysis tool developed to assist with the task of validation in nuclear criticality safety. Details on the Whisper methodology can be found in References 1-3 on the MCNP ® reference collection website at https://mcnp.lanl.gov. Whisper-1.0 was originally developed in 2014 and used to assist with nuclear criticality safety validation at Los Alamos National Laboratory. Whisper was upgraded in 2016 to Whisper-1.1 and prepared for release with MCNP6.2. Whisper contains a library of over 1100 critical experiment benchmarks and quantifies neutronic similarity of an application to benchmarks in the library. Using highest similarity benchmarks, Whisper computes a calculational margin (CM) encompassing of the worst-case bias and bias uncertainty at a 99% confidence level for each application. In addition, portions of the margin of subcriticality (MOS) for nuclear data uncertainty and potential code errors are computed. The baseline upper subcritical limit (USL) computed by Whisper is comprised of the CM, MOS nuclear data , and MOS code errors . The Whisper baseline USL is absent a portion of the MOS due to the area of application, which is applied based upon judgment by the criticality safety analyst. An objective of this paper is to present the baseline USL, CM and portions of the MOS as computed by Whisper for comparison with similar sensitivity/uncertainty tools, such as those used by IRSN and ORNL. The initial comparison involves four critical experiment benchmarks: HEU-MET-FAST-013-001, HEU-SOLTHERM-001-008, PU-MET-FAST-022-001, AND PU-SOL-THERM-001-001, which have been: 1. modeled independently by LANL, IRSN, and ORNL based upon information provided in the ICSBEP Handbook, 2. are common in S/U libraries for LANL, IRSN, and ORNL, 3. span a range of energy spectrum and fissile material, and 4. taken as applications for the purposes of this study and therefore excluded from use as a benchmark for calculating the upper subcritical limit. Results presented in this paper have been computed using covariance data for all isotopes in ENDF/BVII.0 using a 44-group energy structure. Benchmarks in the Whisper library were run in MCNP6.2 using 100,000 neutrons per cycle, skipping 100 cycles for 500 active cycles. Reference 10 also compares the results for baseline USL with an order of magnitude greater neutrons, using the same total number of cycles with 1,000,000 neutrons per cycle. Subsequent to the results presented in Reference 10 changes were made to the benchmark library, as discussed in Reference 11. Newer results using the revised benchmark library are presented herein.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Comparison Study of Upper Subcritical Limits Derived Using Sensitivity/Uncertainty Tools: Case Studies of U233-SOL-THERM-001-001, MIX-COMP-THERM-001-001, IEU-MET-FAST-002-001, LEU-COMP-THERM-001-001, LEU-SOL-THERM-004-001
Neutron transport methods used to establish subcriticality require validation by comparison to critical experiments considered to be benchmarks. Whisper is a sensitivity/uncertainty analysis tool developed to assist with the task of validation in nuclear criticality safety. Details on the Whisper methodology can be found in References 1-3 on the MCNP® reference collection website at https://mcnp.lanl.gov. Whisper-1.0 was originally developed in 2014 and used to assist with nuclear criticality safety validation at Los Alamos National Laboratory. Whisper was upgraded in 2016 to Whisper-1.1 and prepared for release with MCNP6.2 [References 3-5]. Whisper contains a library of over 1100 critical experiment benchmarks and quantifies neutronic similarity of an application to benchmarks in the library. Using highest similarity benchmarks, Whisper computes a calculational margin (CM) encompassing of the worst-case bias and bias uncertainty at a 99% confidence level for each application. In addition, portions of the margin of subcriticality (MOS) for nuclear data uncertainty and potential code errors are computed. The baseline upper subcritical limit (USL) computed by Whisper is comprised of the CM, MOS nuclear data , and MOS code errors . The Whisper baseline USL is absent a portion of the MOS due to the area of application, which is applied based upon judgment by the criticality safety analyst. An objective of this paper is to present the baseline USL, CM and portions of the MOS as computed by Whisper for comparison with similar sensitivity/uncertainty tools, such as those used by IRSN and ORNL. An initial comparison involved four critical experiment benchmarks: HEU-MET-FAST-013-001, HEU-SOLTHERM-001-008, PU-MET-FAST-022-001, AND PU-SOL-THERM-001-001, which have been documented in References 10-13. This study extends the comparison to include cases U233-SOL-THERM-001-001, MIX-COMP-THERM-001-001, IEU-MET-FAST-002-001, LEU-COMP-THERM-001-001, LEU-SOL-THERM- 004-001.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin‐to‐Spin Conversion
Abstract The integration of 2D van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next‐generation spintronic memory devices. However, achieving high‐efficiency spin–orbit torque (SOT) switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, it is shown field‐free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe‐doped MoS 2 (Fe:MoS 2 ) at up to 380 K with a current density of ≈7 × 10 4 A cm −2 . The in situ doping of Fe into monolayer MoS 2 via chemical vapor deposition and the geometry‐induced strain in the crystal break the rotational switching symmetry in Fe:MoS 2 , promoting field‐free SOT switching by generating out‐of‐plane spins via spin‐to‐spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in‐plane magnetic field verifies the existence of z spins in Fe:MoS 2 , inducing an antidamping‐like torque that facilitates field‐free SOT switching. This field‐free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power‐efficient spintronic memory devices.
Chen, Siwei [Department of Mechanical Engineering ↗
The Atomic Drill Bit: Precision Controlled Atomic Fabrication of 2D Materials
The ability to deterministically fabricate nanoscale architectures with atomic precision is the central goal of nanotechnology, whereby highly localized changes in the atomic structure can be exploited to control device properties at their fundamental physical limit. Here, an automated, feedback-controlled atomic fabrication method is reported and the formation of 1D–2D heterostructures in MoS 2 is demonstrated through selective transformations along specific crystallographic orientations. The atomic-scale probe of an aberration-corrected scanning transmission electron microscope (STEM) is used, and the shape and symmetry of the scan pathway relative to the sample orientation are controlled. The focused and shaped electron beam is used to reliably create Mo 6 S 6 nanowire (MoS-NW) terminated metallic-semiconductor 1D–2D edge structures within a pristine MoS 2 monolayer with atomic precision. From these results, it is found that a triangular beam path aligned along the zig-zag sulfur terminated (ZZS) direction forms stable MoS-NW edge structures with the highest degree of fidelity without resulting in disordering of the surrounding MoS 2 monolayer. Density functional theory (DFT) calculations and ab initio molecular dynamic simulations (AIMD) are used to calculate the energetic barriers for the most stable atomic edge structures and atomic transformation pathways. These discoveries provide an automated method to improve understanding of atomic-scale transformations while opening a pathway toward more precise atomic-scale engineering of materials.
2D materials↗
Molybdenum Disulfide Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
MoS 2 nanoribbons have attracted increased interest due to their properties, which can be tailored by tuning their dimensions. Herein, the growth of MoS 2 nanoribbons and triangular crystals formed by the reaction between films of MoOx (2 2 nanoribbons arising from distinct contributions from the single–layer edges and multilayer core. Nanoscale imaging reveals a blue-shifted exciton emission of the monolayer edge compared to the isolated MoS 2 monolayers due to built-in local strain and disorder. We further report on an ultrasensitive photodetector made of a single MoS 2 nanoribbon with a responsivity of 8.72 × 10 2 A W –1 at 532 nm, among the highest reported up-to-date for single-nanoribbon photodetectors. These findings can inspire the design of MoS 2 semiconductors with tunable geometries for efficient optoelectronic devices.
36 MATERIALS SCIENCE↗
Ultra‐Steep Slope Impact Ionization Transistors Based on Graphene/InAs Heterostructures
With the continued scaling of transistors, there is a growing trend for developing steep slope transistors with subthreshold swing (SS) below Boltzmann limitation ( k T/ q ). To this end, impact ionization metal oxide semiconductor (I‐MOS) transistors are attractive for a unique combination of high ON‐state current density, small hysteresis, and ultra‐steep SS slope. However, the performance of I‐MOS is generally limited by the relatively thick depletion region and large operation voltage required for the activation of impact ionization (typically >5 V). Herein, a high‐performance I‐MOS is constructed by van der Waals integrating single‐crystal InAs film with graphene. Due to the low bandgap of InAs as well as the semi‐metallic nature of graphene, the InAs/graphene I‐MOS demonstrates a low operation voltage of 1.5 V, high ON‐state current of 230 μA μm −1 , steep SS <0.6 mV dec −1 , and large ON–OFF ratio >10 6 at temperature below 200 K. Furthermore, a negative transconductance and steep current oscillation is observed in the subthreshold regime, and a device working mechanism is proposed for this novel phenomenon. This study not only pushes the performance limit of I‐MOS but also defines a general pathway to van der Waals heterostructures between conventional III–V compound semiconductors and novel 2D materials for unconventional device functions.
Liu, Yuan↗
Two-Dimensional Mechanics of Atomically Thin Solids on Water
Movement of a three-dimensional solid at an air–water interface is strongly influenced by the extrinsic interactions between the solid and the water. The finite thickness and volume of a moving solid causes capillary interactions and water-induced drag. In this Letter, we report the fabrication and dynamical imaging of freely floating MoS 2 solids on water, which minimizes such extrinsic effects. For this, we delaminate a synthesized wafer-scale monolayer MoS 2 onto a water surface, which shows negligible height difference across water and MoS 2 . Subsequently patterning by a laser generates arbitrarily shaped MoS 2 with negligible in-plane strain. We introduce photoswitchable surfactants to exert a lateral force to floating MoS 2 with a spatiotemporal control. Using this platform, we demonstrate a variety of two-dimensional mechanical systems that show reversible shape changes. Our experiment provides a versatile approach for designing and controlling a large array of atomically thin solids on water for intrinsically two-dimensional dynamics and mechanics.
2D materials↗
Single Nanoflake Photoelectrochemistry Reveals Intrananoflake Doping Heterogeneity That Explains Ensemble-Level Photoelectrochemical Behavior
Transition metal dichalcogenide (TMD) nanoflake thin films are attractive electrode materials for photoelectrochemical (PEC) solar energy conversion and sensing applications, but their photocurrent quantum yields are generally lower than those of bulk TMD electrodes. The poor PEC performance has been primarily attributed to enhanced charge carrier recombination at exposed defect and edge sites introduced by the exfoliation process. Here, a single nanoflake PEC approach reveals how an alternative effect, doping heterogeneity, limits ensemble-level PEC performance. Photocurrent mapping and local photocurrent–potential (i–E) measurements of MoS 2 nanoflakes exfoliated from naturally occurring bulk crystals revealed the presence of n- and p-type domains within the same nanoflake. Interestingly, the n- and p-type domains in the natural MoS 2 nanoflakes were equally efficient for iodide oxidation and tri-iodide reduction (IQE values exceed 80%). At the single domain-level, the natural MoS 2 nanoflakes were nearly as efficient as nanoflakes exfoliated from synthetic n-type MoS 2 crystals. Single domain-level i–E measurements explain why natural MoS 2 nanoflakes exhibit an n-type to p-type photocurrent switching effect in ensemble-level measurements: the n- and p-type diode currents from individual domains oppose each other upon illuminating the entire nanoflake, resulting in zero photocurrent at the switching potential. Furthermore, the doping heterogeneity effect is likely due to nonideal stoichiometry, where p-type domains are S-rich according to XPS measurements. Although this doping heterogeneity effect limits photoanode or photocathode performance, these findings open the possibility to synthesize efficient TMD nanoflake photocatalysts with well-defined lateral p- and n-type domains for enhanced charge separation.
14 SOLAR ENERGY↗
Direct Optoelectronic Imaging of 2D Semiconductor–3D Metal Buried Interfaces
The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing voltage drop at this junction is of particularly challenging and important. Despite numerous studies on contact resistance in 2D semiconductors, the exact nature of the buried interface under a 3D metal remains elusive and unclear. Herein, we report the direct observation of 2D semiconductor-metal buried interface using recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS 2 interface are correlated under variety of metal deposition conditions as well as type of metal contacts. We observe that direct evaporation of Au on MoS 2 induces large strain of ~5% in the MoS 2 which coupled with charge transfer leads to degenerate doping of the MoS 2 underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kΩ μm measured using local conductance probes. This approach was adopted to investigate MoS 2 -In/Au alloy interface, which records lowest contact resistance of 63 kΩ μm. Overall, our results highlight that the MoS 2 /Metal interface is very sensitive to method of contact making and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Interfacial Charge Transfer in Lead Sulfide/Cadmium Sulfide Quantum Dot–Monolayer Molybdenum Disulfide Heterostructures
We investigate the ultrafast interfacial charge transfer dynamics in mixed-dimensional PbS/CdS quantum dot (QD)–monolayer MoS 2 heterostructures exhibiting a type-II band alignment. These 0D–2D heterostructures were assembled using oleic acid-capped PbS/CdS QDs with systematically varied core sizes deposited onto molecular beam epitaxy-grown monolayer MoS 2 . Steady-state and time-resolved optical spectroscopies revealed pronounced bidirectional charge transfer between the 0D and 2D components, involving both electron and hole exchange across the interface. The quenching of the monolayer MoS 2 A-exciton bleach and the modifications of its decay dynamics provide direct evidence for efficient hole transfer from photoexcited MoS 2 into the PbS QD core. Concurrently, attenuation of the QD ground-state bleach and the emergence of ultrafast decay components confirmed electron transfer from photoexcited QDs to monolayer MoS 2 . Both hole and electron transfer processes are dependent on the QD core size, with smaller cores enabling faster transfer rates and higher efficiencies due to enhanced band offsets and interfacial coupling. The complementary insights gained from transient absorption and time-resolved photoluminescence measurements clarify the mechanisms governing interfacial carrier exchange and highlight the importance of both hole and electron transfer as key components in the functioning of such 0D–2D heterostructures. This study underscores the potential of 0D–2D semiconductor heterostructures for advanced optoelectronic and light-energy conversion applications.
36 MATERIALS SCIENCE↗
Substrate-Directed Dimensional and Phase Control of Peptide Assemblies on Two-Dimensional van der Waals Materials
Understanding and controlling biomolecular self-assembly on van der Waals (vdW) materials has the potential to advance hybrid bioelectronic devices by enabling precise tuning of the interface and modulation of the resulting electronic properties of the biomolecule-vdW heterostructure. However, how surface properties of vdW materials direct biomolecule assembly remains poorly understood. To fill this knowledge gap, we investigated the assembly of a peptide known to assemble into two-dimensional (2D) crystalline films on MoS 2 on three representative vdW surfaces: WS 2 , MoS 2 , and highly oriented pyrolytic graphite (HOPG). Using in situ atomic force microscopy (AFM), we find that assembly is substrate-dependent, resulting in multilayers on WS 2 , monolayers on MoS 2 , and multiple coexisting phases on HOPG. WS 2 exhibits a higher negative charge, strong long-range electrostatic interactions, and extensive hydration layering that may promote multilayer stacking. In contrast, MoS 2 has stronger short-range interactions with the peptides but much weaker long-range interactions and hydration structure, which may favor monolayer formation. Molecular dynamics simulations predict a corresponding switch from monolayer to multilayer aggregates of the adsorbed monomers, reflected in their relative mobilities. On hydrophobic HOPG, the peptides bind most strongly and remain as monomers with high surface mobility. The peptide dimers comprising the basic unit of the crystals are more compact on HOPG, which has a smaller lattice constant than WS 2 or MoS 2 , suggesting strain contributes to stabilizing multiple phases. Our results provide mechanistic insights into how surface charge and hydration structure, and the lattice structure of the substrates governs peptide assembly on vdW materials, offering a framework to rationally control the 2D peptide-vdW heterostructures.
Molecular dynamics simulations↗
Enabling room temperature ferromagnetism in monolayer MoS2 via in situ iron-doping
Abstract Two-dimensional semiconductors, including transition metal dichalcogenides, are of interest in electronics and photonics but remain nonmagnetic in their intrinsic form. Previous efforts to form two-dimensional dilute magnetic semiconductors utilized extrinsic doping techniques or bulk crystal growth, detrimentally affecting uniformity, scalability, or Curie temperature. Here, we demonstrate an in situ substitutional doping of Fe atoms into MoS 2 monolayers in the chemical vapor deposition growth. The iron atoms substitute molybdenum sites in MoS 2 crystals, as confirmed by transmission electron microscopy and Raman signatures. We uncover an Fe-related spectral transition of Fe:MoS 2 monolayers that appears at 2.28 eV above the pristine bandgap and displays pronounced ferromagnetic hysteresis. The microscopic origin is further corroborated by density functional theory calculations of dipole-allowed transitions in Fe:MoS 2 . Using spatially integrating magnetization measurements and spatially resolving nitrogen-vacancy center magnetometry, we show that Fe:MoS 2 monolayers remain magnetized even at ambient conditions, manifesting ferromagnetism at room temperature.
36 MATERIALS SCIENCE↗