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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16

All sources NASA NTRS DOE OSTI

NASA NTRS1993

Cellular track model for study of heavy ion beams

Track theory is combined with a realistic model of a heavy ion beam to study the effects of nuclear fragmentation on cell survival and biological effectiveness. The effects of secondary reaction products are studied as a function of depth in a water column. Good agreement is found with experimental results for the survival of human T-l cells exposed to monoenergetic carbon, neon, and argon beams under aerobic and hypoxia conditions. The present calculation, which includes the effect of target fragmentation, is a significant improvement over an earlier calculation because of the use of a vastly improved beam model with no change in the track theory or cellular response parameters.

Shinn, Judy L.↗

NASA NTRS1990

Ion beam sputtering of in situ superconducting Y-Ba-Cu-O films

Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria stabilized zirconia and SrTiO3 substrates by ion-beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 83.5 K without post-deposition anneals. Both the deposition rate and the c-lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c-dimensions and low Tc. Higher-power sputtering produced a continuous decrease in the c-lattice parameter and increase in critical temperature. Films having the smaller c-lattice parameters were Cu rich. The Cu content of films deposited at beam voltages of 800 V and above increased with increasing beam power.

Klein, J. D.↗

DOE OSTI2023

Ion concentration ratio measurements of ion beams generated by a commercial microwave electron cyclotron resonance plasma source

A commercially available electron cyclotron resonance (ECR) plasma source (GenII Plasma Source, tectra GmbH) is widely used for surface processing. This plasma source is compatible with ultrahigh vacuum systems, and its working pressure is relatively low, around 10 –6 –10 –4 Torr even without differential pumping. Here, we report ion flux concentration ratios for each ion species in an ion beam from this source, as measured by a mass/energy analyzer that is a combination of a quadrupole mass spectrometer, an electrostatic energy analyzer, and focusing ion optics. In this study, the examined beams were those arising from plasmas produced from feed gases of H 2 , D 2 , N 2 , O 2 , Ar, and dry air over a range of input power and working pressures. H 2 (D 2 ) plasmas are widely used for nuclear fusion applications and, hence, the ion concentration ratios of H + , H 2 + , and H 3 + reported here will be useful information for research that applies this plasma source to well-controlled plasma-material interaction studies. Ion energy distributions, stability of operation, and impurity concentrations were also assessed for each of the plasma species investigated.

47 OTHER INSTRUMENTATION↗

NASA NTRS1986

Thin film growth rate effects for primary ion beam deposited diamondlike carbon films

Diamondlike carbon (DLC) films were grown by primary ion beam deposition and the growth rates were measured for various beam energies, types of hydrocarbon gases and their ratio to Ar, and substrate materials. The growth rate had a linear dependence upon hydrocarbon content in the discharge chamber, and only small dependence on other parameters. For given deposition conditions a threshold in the atomic ratio of carbon to argon gas was identified below which films did not grow on fused silica substrate, but grew on Si substrate and on existing DLC films. Ion source deposition parameters and substrate material were found to affect the deposition threshold and film growth rates.

Nir, D.↗

NASA NTRS1978

The use of an ion-beam source to alter the surface morphology of biological implant materials

An electron bombardment, ion thruster was used as a neutralized-ion beam sputtering source to texture the surfaces of biological implant materials. Scanning electron microscopy was used to determine surface morphology changes of all materials after ion-texturing. Electron spectroscopy for chemical analysis was used to determine the effects of ion texturing on the surface chemical composition of some polymers. Liquid contact angle data were obtained for ion textured and untextured polymer samples. Results of tensile and fatigue tests of ion-textured metal alloys are presented. Preliminary data of tissue response to ion textured surfaces of some metals, polytetrafluoroethylene, alumina, and segmented polyurethane were obtained.

Weigand, A. J.↗

DOE OSTI2025

Focused Helium Ion Beam for Direct Patterning of Monolayer MoS 2 Nanoribbon Field Effect Devices

The helium ion microscope (HIM) focused ion beam (FIB) has emerged as a powerful tool to directly pattern nanostructures below 10 nm due to its high-resolution capabilities and the inert nature of the ion source. These attributes make HIM FIB particularly interesting for patterning 2D materials such as transition metal dichalcogenides (TMDs) to investigate transport phenomena at the nanoscale. Reported here is the fabrication of MoS 2 nanoribbon devices using HIM FIB-induced etching (FIBIE) with XeF 2 , allowing for reduced ion dose compared to direct sputtering. While patterning is efficacious, the devices exhibit performance degradation with decreasing nanoribbon width due to damage up to 150 nm beyond the patterned edge. Incorporating an hBN encapsulation improves device performance by one order of magnitude, although the lateral extent of damage remains unchanged. The spatial distribution of damage is shown to be determined by the forward- and backscattered ions and electrons, while the hBN encapsulation layer substantially reduces damage from XeF 2 interactions in unexposed regions. Raman and photoluminescence (PL) measurements corroborate these findings, while ion/solid interaction simulations further elucidate the resolution limits imposed by substrate interactions. In conclusion, this work provides critical insights and a practical pathway for utilizing HIM FIBIE in 2D TMD functional device patterning.

MoS 2↗

NASA NTRS1979

Physical processes in directed ion beam sputtering

The general operation of a discharge chamber for the production of ions is described. A model is presented for the magnetic containment of both primary and secondary or Maxwellian electrons in the discharge plasma. Cross sections were calculated for energy and momentum transfer in binary collisions between like pairs of Ar, Kr, and Xe atoms in the energy range from about 1 eV to 1000 eV. These calculations were made from available pair interaction potentials using a classical model. Experimental data from the literature were fit to a theoretical expression for the Ar resonance charge exchange cross section over the same energy range. A model was developed that describes the processes of conical texturing of a surface due to simultaneous directed ion beam etching and sputter deposition of an impurity material. This model accurately predicts both a minimum temperature for texturing to take place and the variation of cone density with temperature. It also provides the correct order of magnitude of cone separation. It was predicted from the model, and subsequently verified experimentally, that a high sputter yield material could serve as a seed for coning of a lower sputter yield substrate. Seeding geometries and seed deposition rates were studied to obtain an important input to the theoretical texturing model.

Robinson, R. S.↗

NASA NTRS1989

Fundamental tribological properties of ion-beam-deposited boron nitride films

The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

Miyoshi, Kazuhisa↗

NASA NTRS1990

Fundamental tribological properties of ion-beam-deposited boron nitride films

Miyoshi, K.↗

NASA NTRS1980

Energetic /approximately 100-keV/ tailward-directed ion beam outside the Jovian plasma boundary

The hot plasma instrument on the Voyager-2 spacecraft measured a nearly monoenergetic (100 keV) ion beam several hours after crossing the Jovian plasma boundary on the nightside of the planet. The beam, deduced to consist primarily of heavy ions, persisted for about four hours and originated from the general direction of Jupiter. The energy density of the beam was about several times the energy density of the magnetic field (beta greater than 1). This beam, a product of an as yet not understood Jovian plasma acceleration mechanism, provides a dramatic example of the energetic dynamics of Jupiter's magnetosphere.

Krimigis, S. M.↗

NASA NTRS1980

Ion-beam etching enhances adhesive bonding

Metals and fluoropolymers exposed to 0.5 to 1.0 keV argon ions at current densities of 0.2 to 1.5 mA/sq cm develop surface texturing that increases tensile and shear strength of epoxy bonds. Bonds are 46 to 100 percent stronger than those of chemically etched surfaces. Metals require 3 to 4 hours of bombardment to become properly textured. Fluoropolymers require 5 seconds to 30 minutes. Ion beam will not texture nickel. Unlike chemical treatments, bonding of fluoropolymers can be done days or months after ion treatment.

Banks, B. A.↗

DOE OSTI2022

Atomic Focused Nitrogen Ion Beam from a Liquid-Metal Alloy Ion Source.

Abstract not provided.

Titze, Michael↗

NASA NTRS1984

Ion beam accelerator system

A system is described that combines geometrical and electrostatic focusing to provide high ion extraction efficiency and good focusing of an accelerated ion beam. The apparatus includes a pair of curved extraction grids (16, 18) with multiple pairs of aligned holes positioned to direct a group of beamlets (20) along converging paths. The extraction grids are closely spaced and maintained at a moderate potential to efficiently extract beamlets of ions and allow them to combine into a single beam (14). An accelerator electrode device (22) downstream from the extraction grids, is at a much lower potential than the grids to accelerate the combined beam.

Aston, Graeme↗

NASA NTRS1989

Variable-Energy Ion Beams For Modification Of Surfaces

Beam of low-energy negative oxygen ions used to grow layer of silicon dioxide on silicon. Beam unique both in purity, contains no molecular oxygen or other charged species, and in low energy, which is insufficient to damage silicon by physically displacing atoms. Low-energy growth accomplished with help of ion-beam apparatus. Directs electrons into crosswise stream of gas, generating stream of negative ions. Pair of charged plates separates ions from accompanying electrons and diverts ion beam to target - silicon substrate. Diameter of beam at target 0.5 to 0.75 cm. Promises useful device to study oxidation of semiconductors and, in certain applications, to replace conventional oxidation processes.

Chutjian, Ara↗

DOE OSTI2021

FLASH Dose Rate Helium Ion Beams: First In Vitro Investigations

To establish and investigate the effects of dose, linear energy transfer (LET), and O{sub 2} concentration on biologic response to ultrahigh dose rate (uHDR; FLASH) helium ion beams compared with standard dose rate (SDR) irradiation.

62 RADIOLOGY AND NUCLEAR MEDICINE↗

NASA NTRS1981

Hydrogenated amorphous silicon deposited by ion-beam sputtering

Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

Lowe, V. E.↗

DOE OSTI2025

Physical patterning of high-Q superconducting niobium resonators via ion beam etching

The development of superconducting quantum circuits increasingly involves the exploration of chemically distinct materials and complex multilayered structures. Accelerating this trend may benefit from low-damage, materials-agnostic patterning techniques that are compatible with a broad range of materials. Here, in this work, we investigate the utility of low-energy ion beam etching (IBE), a physical patterning technique, as an alternative to reactive ion etching for fabricating low-loss superconducting resonators. We use niobium (Nb) resonators as a test platform, leveraging their well-characterized performance metrics for benchmarking. To address IBE-induced surface redeposition, we introduce an in situ aluminum capping layer combined with targeted post-fabrication chemical treatment. This strategy yields resonators with internal quality factors as high as 6 × 10 5 in the single-photon regime at 50 mK. These results establish low-energy IBE as a promising patterning technique for superconducting devices, with the potential to accelerate development across chemically diverse and multilayered material platforms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

High-energy ion beams generated with high efficiency using laser-driven 3D microstructures

Laser-driven ion acceleration in plasma is being proposed as a source of ion beams with a high peak current that can be useful in many fields of science and medicine. Using this method, high proton energies have been achieved by increasing the laser power and by using ultrathin (≤ 200 nm) foils. However, this approach is limited by survivability of the nanotargets to laser prepulses and by difficulty in controlling the plasma acceleration properties. Here, we introduce a new target platform using two-photon polymerization, 3D laser-printed “clone” microstructures with average densities lower than solid that are relatively insensitive to the laser prepulse. Two types of microstructured targets consisting of either a multilayered log-pile or a stochastic arrangement of one micron diameter wires are used. Both demonstrate a higher energy and higher yield proton acceleration compared to thin solid-density foil targets by the robust target normal sheath acceleration (TNSA) mechanism. We find that when such 10–20 μm thick structures are irradiated with a petawatt laser, protons with energies up to 110 MeV and a laser-to-proton conversion efficiency of ~ 10% are obtained. Our work suggests that such microstructures optimized for 60–200 MeV compact proton accelerators are promising for future radiotherapy and other applications.

Physics - Plasma physics↗