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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Enhanced strength and ductility in a high-entropy alloy via ordered oxygen complexes

Oxygen, one of the most abundant elements on Earth, often forms an undesired interstitial impurity or ceramic phase (such as an oxide particle) in metallic materials. Even when it adds strength, oxygen doping renders metals brittle. Here, in this study, we show that oxygen can take the form of ordered oxygen complexes, a state in between oxide particles and frequently occurring random interstitials. Unlike traditional interstitial strengthening, such ordered interstitial complexes lead to unprecedented enhancement in both strength and ductility in compositionally complex solid solutions, the so-called high-entropy alloys (HEAs). The tensile strength is enhanced (by 48.5 ± 1.8 per cent) and ductility is substantially improved (by 95.2 ± 8.1 per cent) when doping a model TiZrHfNb HEA with 2.0 atomic per cent oxygen, thus breaking the long-standing strength–ductility trade-off. The oxygen complexes are ordered nanoscale regions within the HEA characterized by (O, Zr, Ti)-rich atomic complexes whose formation is promoted by the existence of chemical short-range ordering among some of the substitutional matrix elements in the HEAs. Carbon has been reported to improve strength and ductility simultaneously in face-centred cubic HEAs, by lowering the stacking fault energy and increasing the lattice friction stress. By contrast, the ordered interstitial complexes described here change the dislocation shear mode from planar slip to wavy slip, and promote double cross-slip and thus dislocation multiplication through the formation of Frank–Read sources (a mechanism explaining the generation of multiple dislocations) during deformation. This ordered interstitial complex-mediated strain-hardening mechanism should be particularly useful in Ti-, Zr- and Hf-containing alloys, in which interstitial elements are highly undesirable owing to their embrittlement effects, and in alloys where tuning the stacking fault energy and exploiting athermal transformations do not lead to property enhancement. These results provide insight into the role of interstitial solid solutions and associated ordering strengthening mechanisms in metallic materials.

Lei, Zhifeng↗
DOE OSTI2014

Radiation damage in cubic ZrO 2 and yttria-stabilized zirconia from molecular dynamics simulations

Here, we perform molecular dynamics simulation on cubic ZrO 2 and yttria-stabilized zirconia (YSZ) to elucidate defect cluster formation resulting from radiation damage, and evaluate the impact of Y-dopants. Interstitial clusters composed of split-interstitial building blocks, i.e., Zr-Zr or Y-Zr are formed. Moreover, oxygen vacancies control cation defect migration; in their presence, Zr interstitials aggregate to form split-interstitials whereas in their absence Zr interstitials remain immobile, as isolated single-interstitials. Y-doping prevents interstitial cluster formation due to sequestration of oxygen vacancies.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Dynamics of Helium-Loaded Grain Boundaries under Shear Deformation in α-Fe

The defects produced in collision cascades will interact with microstructural features in materials, such as GBs and dislocations. The coupled motion of GBs under stress has been widely observed in simulations and experiments. Two symmetric tilt GBs with a common <110> tilt axis (Σ3 and Σ11) in bcc iron are used to investigate the coupled motion of GBs under shear deformation. Also, we have explored the effect of self-interstitial atoms (SIAs) loading on the GB motion, with different concentrations of interstitials randomly inserted around the GB plane. The simulation results show that the interstitial loading reduces the critical stress of the GB coupled motion for the Σ3 GB. Furthermore, the interstitials and vacancies are inserted randomly at the GB plane and at a distance of 1 nm away from the GB plane, respectively, to understand the self-healing mechanism of GBs under stress. The behavior of the defect-loaded GBs depends on the GB structure. The loaded interstitials in the Σ3 GB easily form <111> interstitial clusters that do not move along with the GB. The vacancies in the Σ3 GB impede the GB motion. However, the interstitials move along with the Σ11 GB and annihilate with vacancies when the GB moves into the vacancy-rich region, leading to the self-healing and damage recovery of the Σ11 GB.

Gao, Fei↗
DOE OSTI2016

Reactivity of Hydrogen on and in Nanostructured Molybdenum Nitride: Crotonaldehyde Hydrogenation

Early-transition-metal nitrides, including γ-Mo 2 N, are active and selective for a variety of reactions, including the hydrogenation of organics (e.g., hydrodeoxygenation), CO (e.g., Fischer–Tropsch synthesis), and CO 2 . In addition to adsorbing hydrogen onto the surface, some of these materials can incorporate hydrogen into subsurface, interstitial sites. Research described in this paper examined, experimentally and computationally, the nature of hydrogen on and in γ-Mo 2 N, with a particular focus on characterizing the interactions of these hydrogens with crotonaldehyde. Hydrogen was added to γ-Mo 2 N via exposure to gaseous hydrogen at elevated temperatures, forming γ-Mo 2 N-H x , where 0.061< x < 0.082. Temperature-programmed desorption (TPD) experiments indicate that γ-Mo 2 N-H x has at least two distinct hydrogen binding sites and that these sites can be selectively populated. Inelastic neutron scattering and density functional theory calculations indicate the presence of surface nitrogen-bound (κ 1 -NH surf ), surface Mo-bound (κ 1 -MoHsurf), and interstitial Mo-bound (μ 6 -Mo 6 H sub ) hydrogens. Selectivities for the hydrogenation of crotonaldehyde, a model of species in biomass-derived liquids, correlated with the populations at these sites. Importantly, materials with high densities of interstitial, hydridic hydrogen were selective for C=O hydrogenation (i.e., formation of crotyl alcohol). Collectively the results provide mechanistic insights regarding the desorption and reactivity of hydrogen on and in γ-Mo 2 N. Hydrogen adsorption/desorption to γ-Mo 2 N is heterolytic; in particular, H 2 adds across a Mo–N bond. Because the surface Mo–H site is energetically unfavorable in comparison to the interstitial site, hydrogen migrates into interstitial sites once the surface NH sites are saturated. Crotonaldehyde adsorption facilitates migration of this interstitial hydrogen back to the surface, forming surface Mo–H that is selective for hydrogenation of the C=O bond. These insights will facilitate the design of γ-Mo 2 N and other early-transition-metal nitrides for catalytic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

A Monte Carlo Model of Irradiation-Induced Recrystallization in Polycrystalline UMo Fuels

Experiments show that irradiation-induced recrystallization speeds up the swelling kinetics in U10wt%Mo fuels. However, recrystallization mechanisms and the effect of initial grain microstructures on recrystallization kinetics are still unclear. In this work a Monte Carlo model coupling the rate theory of defect evolution has been developed to study the irradiation-induced recrystallization. The rate theory is used to describe the spatial evolution of gas bubbles, interstitials and interstitial loops; First-Passage Kinetic Monte Carlo (FPKMC) approach is used to describe the fast and strongly anisotropic migration of interstitials, and a Cellular Automata method is used to model the formation of recrystallized grains. With the assumption that recrystallization may occur when the local interstitial loop density is larger than a given critical value, simulation results reveal that 1) recrystallized grains first nucleate on grain boundaries and the recrystallization zone front moves to the center of original coarse grains in the UMo matrix, and 2) recrystallization starts earlier in coarse polycrystalline structures, while the overall recrystallization kinetics decreases with increasing grain size. These results agree with experimental observations. The comparison of recrystallization kinetics obtained from experiments and modeling suggests that the interstitial loop accumulation leads to the recrystallization and the interstitial loop growth is suppressed inside coarse grains due to the over-pressured intra-granular gas bubbles.

Frazier, William E.↗
DOE OSTI2016

Oxygen Point Defect Chemistry in Ruddlesden–Popper Oxides (La 1- x Sr x ) 2 MO 4±δ (M = Co, Ni, Cu)

Here, stability of oxygen point defects in Ruddlesden–Popper oxides (La 1- x Sr x ) 2 MO 4±δ (M = Co, Ni, Cu) is studied with density functional theory calculations to determine their stable sites, charge states, and energetics as functions of Sr content ( x ), transition metal (M), and defect concentration (δ). We demonstrate that the dominant O point defects can change between oxide interstitials, peroxide interstitials, and vacancies. In general, increasing x and atomic number of M stabilizes peroxide over oxide interstitials as well as vacancies over both peroxide and oxide interstitials; increasing δ destabilizes both oxide interstitials and vacancies but barely affects peroxide interstitials. We also demonstrate that the O 2p-band center is a powerful descriptor for these materials and correlates linearly with the formation energy of all defects. The trends of formation energy versus x , M, and δ and the correlation with O 2p-band center are explained in terms of oxidation chemistry and electronic structure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Pinning dislocations in colloidal crystals with active particles that seek stacking faults

There is growing interest in functional, adaptive devices built from colloidal subunits of micron size or smaller. A colloidal material with dynamic mechanical properties could facilitate such microrobotic machines. Here we study via computer simulation how active interstitial particles in small quantities can be used to modify the bulk mechanical properties of a colloidal crystal. Passive interstitial particles are known to pin dislocations in metals, thereby increasing resistance to plastic deformation. We extend this tactic by employing anisotropic active interstitials that travel super-diffusively and bind strongly to stacking faults associated with partial dislocations. We find that: (1) interstitials that are effective at reducing plasticity compromise between strong binding to stacking faults and high mobility in the crystal bulk. (2) Reorientation of active interstitials in the crystal depends upon rotational transitions between high-symmetry crystal directions. (3) The addition of certain active interstitial shapes at concentrations as low as 60 per million host particles (0.006%) can create a shear threshold for dislocation migration. This work demonstrates how active materials in a dense matrix can locally sense their environment and lead to bulk property changes.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Atomic-scale investigation of point defects and hydrogen-solute atmospheres on the edge dislocation mobility in alpha iron

In this study, we present atomistic mechanisms of 1/2 [111](11{sup ¯}0) edge dislocation interactions with point defects (hydrogen and vacancies) and hydrogen solute atmospheres in body centered cubic (bcc) iron. In metals such as iron, increases in hydrogen concentration can increase dislocation mobility and/or cleavage-type decohesion. Here, we first investigate the dislocation mobility in the presence of various point defects, i.e., change in the frictional stress as the edge dislocation interacts with (a) vacancy, (b) substitutional hydrogen, (c) one substitutional and one interstitial hydrogen, (d) interstitial hydrogen, (e) vacancy and interstitial hydrogen, and (f) two interstitial hydrogen. Second, we examine the role of a hydrogen-solute atmosphere on the rate of local dislocation velocity. The edge dislocation simulation with a vacancy in the compression side of the dislocation and an interstitial hydrogen atom at the tension side exhibit the strongest mechanical response, suggesting a higher potential barrier and hence, the higher frictional stress (i.e., ∼83% higher than the pure iron Peierls stress). In the case of a dislocation interacting with a vacancy on the compressive side, the vacancy binds with the edge dislocation, resulting in an increase in the friction stress of about 28% when compared with the Peierls stress of an edge dislocation in pure iron. Furthermore, as the applied strain increases, the vacancy migrates through a dislocation transportation mechanism by attaining a velocity of the same order as the dislocation velocity. For the case of the edge dislocation interacting with interstitial hydrogen on the tension side, the hydrogen atom jumps through one layer perpendicular to the glide plane during the pinning-unpinning process. Finally, our simulation of dislocation interactions with hydrogen show first an increase in the local dislocation velocity followed by a pinning of the dislocation core in the atmosphere, resulting in resistance to dislocation motion as the dislocation moves though the hydrogen-solute atmospheres. With this systematic, atomistic study of the edge dislocation with various point defects, we show significant increase in obstacle strengths in addition to an increase in the local dislocation velocity during interaction with solute atmospheres. The results have implications for constitutive development and modeling of the hydrogen effect on dislocation mobility and deformation in metals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering

We report a systematic study into the effects of long low temperature (≤500 °C) annealing on the lifetime and interstitial iron distributions in as-grown multicrystalline silicon (mc-Si) from different ingot height positions. Samples are characterised in terms of dislocation density, and lifetime and interstitial iron concentration measurements are made at every stage using a temporary room temperature iodine-ethanol surface passivation scheme. Our measurement procedure allows these properties to be monitored during processing in a pseudo in situ way. Sufficient annealing at 300 °C and 400 °C increases lifetime in all cases studied, and annealing at 500 °C was only found to improve relatively poor wafers from the top and bottom of the block. We demonstrate that lifetime in poor as-grown wafers can be improved substantially by a low cost process in the absence of any bulk passivation which might result from a dielectric surface film. Substantial improvements are found in bottom wafers, for which annealing at 400 °C for 35 h increases lifetime from 5.5 μs to 38.7 μs. The lifetime of top wafers is improved from 12.1 μs to 23.8 μs under the same conditions. A correlation between interstitial iron concentration reduction and lifetime improvement is found in these cases. Surprisingly, although the interstitial iron concentration exceeds the expected solubility values, low temperature annealing seems to result in an initial increase in interstitial iron concentration, and any subsequent decay is a complex process driven not only by diffusion of interstitial iron.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

A first-principles investigation of point defect structure and energetics in ThO 2

The structure and energetics of charged point defects in thorium dioxide (ThO 2 ) have been investigated using the density functional theory (DFT) and phonon simulations. DFT simulations were performed under both zero-pressure and constant volume conditions. Termed as the free volume change of the point defects, the change in volume of the supercell has been computed in the zero-pressure case. Supercell expansion was observed with the increase of the (nominal) charge state of anion (O) interstitials and cation (Th) vacancies from neutral to its maximum. On the contrary, contraction of the supercell has been observed with anion vacancies and cation interstitials as the defect charge increases. The supercell volume change with respect to the charge state has been correlated with the resulting defect energetics. It has been observed that, as the defect charge increased, the internal energy and entropy of defect formation of the cation vacancies and anion interstitials were found to increase, while that of the cation interstitials and anion vacancies decreased. Here, the temperature dependence of internal energy and entropy has also been examined. It was found that, as the temperature increases, the internal energies of the formation of cation vacancies and anion interstitials decrease, while those of the cation interstitials and anion vacancies increase. An opposite observation is seen for the entropies of formation defects when above room temperatures.

42 ENGINEERING↗
DOE OSTI2014

Limitations of the TG-43 formalism for skin high-dose-rate brachytherapy dose calculations

Purpose: In skin high-dose-rate (HDR) brachytherapy, sources are located outside, in contact with, or implanted at some depth below the skin surface. Most treatment planning systems use the TG-43 formalism, which is based on single-source dose superposition within an infinite water medium without accounting for the true geometry in which conditions for scattered radiation are altered by the presence of air. The purpose of this study is to evaluate the dosimetric limitations of the TG-43 formalism in HDR skin brachytherapy and the potential clinical impact. Methods: Dose rate distributions of typical configurations used in skin brachytherapy were obtained: a 5 cm × 5 cm superficial mould; a source inside a catheter located at the skin surface with and without backscatter bolus; and a typical interstitial implant consisting of an HDR source in a catheter located at a depth of 0.5 cm. Commercially available HDR{sup 60}Co and {sup 192}Ir sources and a hypothetical {sup 169}Yb source were considered. The Geant4 Monte Carlo radiation transport code was used to estimate dose rate distributions for the configurations considered. These results were then compared to those obtained with the TG-43 dose calculation formalism. In particular, the influence of adding bolus material over the implant was studied. Results: For a 5 cm × 5 cm{sup 192}Ir superficial mould and 0.5 cm prescription depth, dose differences in comparison to the TG-43 method were about −3%. When the source was positioned at the skin surface, dose differences were smaller than −1% for {sup 60}Co and {sup 192}Ir, yet −3% for {sup 169}Yb. For the interstitial implant, dose differences at the skin surface were −7% for {sup 60}Co, −0.6% for {sup 192}Ir, and −2.5% for {sup 169}Yb. Conclusions: This study indicates the following: (i) for the superficial mould, no bolus is needed; (ii) when the source is in contact with the skin surface, no bolus is needed for either {sup 60}Co and {sup 192}Ir. For lower energy radionuclides like {sup 169}Yb, bolus may be needed; and (iii) for the interstitial case, at least a 0.1 cm bolus is advised for {sup 60}Co to avoid underdosing superficial target layers. For {sup 192}Ir and {sup 169}Yb, no bolus is needed. For those cases where no bolus is needed, its use might be detrimental as the lack of radiation scatter may be beneficial to the patient, although the 2% tolerance for dose calculation accuracy recommended in the AAPM TG-56 report is not fulfilled.

61 RADIATION PROTECTION AND DOSIMETRY↗
DOE OSTI2018

On the mobility of defect clusters and their effect on microstructure evolution in fcc Ni under irradiation

Here, µs-scale molecular dynamics studies of vacancy and interstitial clusters in fcc Ni revealed three- and one- dimensional (3-D and 1-D) modes of the cluster motion. The 1-D mobility of interstitial defects is known to enhance swelling rate. The theoretical analysis performed here suggests two novel mechanism by which the 3-D mobile clusters affect microstructure evolution under irradiation. First, the mobility of vacancy clusters hinders nucleation of stable voids due to recombination with interstitial-type loops and edge dislocations. Second, the capture efficiency of dislocations is higher for 3-D mobile vacancy and interstitial clusters than single defects, with the combined effect depending on relative fractions of clustered vacancies and interstitials produced in cascades. The observed differences in radiation damage of most fcc and bcc metals is attributed to the difference in cascade-produced vacancy defects: immobile SFTs and loops in fcc metals and mobile clusters in bcc metals. In this context, fcc Ni is similar to bcc metals due to its high stacking fault energy.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Nitrogen diffusion in hafnia and the impact of nitridation on oxygen and hydrogen diffusion: A first-principles study

Using first-principles simulations, we have computed incorporation energies and diffusion barriers of ammonia, the nitrogen molecule and atomic nitrogen in monoclinic hafnia (m-HfO{sub 2}). Our calculations show that ammonia is likely to dissociate into an NH{sub 2} molecular unit, whereas the nitrogen molecule remains as a molecule either in the interstitial space or at an oxygen lattice site. The lowest energy pathway for the diffusion of atomic nitrogen interstitials consists of the hopping of the nitrogen interstitial between neighboring three-coordinated lattice oxygen atoms that share a single Hf atom, and the barrier for such hops is determined by a switching mechanism. The substitutional nitrogen atom shows a preference for diffusion through the doubly positive oxygen vacancy-mediated mechanism. Furthermore, we have investigated the impact of nitrogen atoms on the diffusion barriers of oxygen and hydrogen interstitials in m-HfO{sub 2}. Our results show that nitrogen incorporation has a significant impact on the barriers for oxygen and hydrogen diffusion: nitrogen atoms attract oxygen and hydrogen interstitials diffusing in the vicinity, thereby slowing down (reducing) their diffusion (diffusion length)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

First-principles study of inert gas incorporation and migration in zirconium nitride

Uranium-Molybdenum alloy based fuels are the most promising fuel for the future high performance research reactors using low enriched uranium (LEU). However, when used in dispersion with aluminum, significant amount of interaction products form at the interface between the UMo fuel particle and the surrounding Al during in-pile tests which leads to non-acceptable swelling. To reduce the swelling in U-Mo/Al dispersion fuel at high burnups, different diffusion barrier coatings, e.g., ZrN, were deposited on the U-Mo particles to avoid the interaction between fuel particles and the Al matrix. These diffusion barrier coatings are very effective in reducing the formation of interaction layer and therefore the fuel swelling. So far, ZrN is selected as the candidate coating material for the European Dispersion Fuel program due to the superior thermophysical properties of ZrN. The thermodynamic and kinetic stability of ZrN coating with respect to Al and U-Mo has been studied by the current authors using density functional theory calculations. So far there are very few studies of the diffusion behaviors of inert gases in ZrN. A recent publication on irradiated (Pu,Zr)N reveals that the majority of fission-induced Xe is retained in the material, while He is release to the fuel pin to a large extent. This raises the questions on the underlying differences of inert gas behavior in nitride fuel. Therefore, the purpose of this study is to understand the incorporation and migration behavior of inert gases He, Kr and Xe in ZrN using density functional theory (DFT) based first-principles calculations. Using density-functional theory calculations we provided a systematic study of the incorporation and migration of fission gases in ZrN. We investigated the formation energies of several defects (vacancies, interstitials, divacancies, Frenkel pairs, and Schottky defects) and the incorporation energies of inert gases in these defects. Results show that the formation energies of point defects are strongly affected by the chemical potentials of N and Zr species. The energetically most favorable incorporation site for fission gases is found to be the first nearest neighbor Schottky defect, in which the fission gas atom sits at somewhere between the Zr and N vacancies. The predicted solution energies of rare gases, i.e, He, Kr and Xe, in ZrN, is almost linearly dependent on the atom size of inert gases. We compared the solution energy Xe in ZrN with several other nuclear materials with the same B1 structure (MX), e.g., TiN, UN and UC. The solution energies of Xe in MX are closely related to the size of vacancy sites. The potential migration mechanisms of Xe in ZrN include interstitial and vacancy-assisted diffusion. The calculations show that vacancies essentially act as Xe trapping sites. The migration behavior of Xe in N and Zr divacancy and Schottky defects were compared with that through tetrahedral interstitials. It is found that the migration barrier is much lower with the interstitial mechanism than those with the vacancy mechanism. Therefore, at low temperatures Xe diffusion in ZrN is mostly through the interstitial mechanism or existing grain boundaries while at high temperature volume diffusion could be preferred, i.e., diffusion with Zr and N vacancies. (authors)

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of alloying elements on defect evolution in Ni-20X binary alloys

The effect of alloying elements on radiation-induced microstructural evolution in Ni and Ni-20X (X = Fe, Cr, Mn and Pd) binary alloys was investigated using ion irradiation and cross-sectional transmission electron microscopy. The three-dimensional migration mode is identified to be the dominating migration mechanism for interstitial clusters in these binary alloys, contrary to the one-dimensional mode that dominates in the well-studied dilute alloys. The results reveal that: (1) the average size of defect clusters decreases as the solute atomic volume size factor increases. Smaller void size in Ni-20Cr is attributed to faster vacancy mobility in the near surface region, and weaker vacancy binding energy beyond the irradiation peak than Ni-20Fe. The smaller voids observed in Ni-20Mn and Ni-20Pd beyond the damage peak are due to the stronger Mn/Pd-vacancy binding effect of largely oversized solute atoms. (2) Oversized solutes can act as strong trapping sites for interstitials. The larger the solute atomic volume factor, the stronger the trapping force. This leads to a more significantly sluggish interstitial migration and smaller dislocation loop size. The average dislocation loop size in Ni-20Fe was four times larger than Ni-20Pd (atomic volume factor being 10.6% and 41.3%) but an order of magnitude lower in density. The smaller dislocation loop size in Ni-20Cr is attributed to stronger interstitial binding of Cr-Ni. In conclusion, overall, the alloying effect on defects is more significant in concentrated binary alloys than in dilute binary alloys, due to the concentration difference of alloying atoms and the interstitial dominant migration mechanisms in the main irradiated region.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Upregulation of Interleukin-33 in obstructive renal injury

Interstitial fibrosis and loss of parenchymal tubular cells are the common outcomes of progressive renal diseases. Pro-inflammatory cytokines have been known contributing to the damage of tubular cells and fibrosis responses after renal injury. Interleukin (IL)-33 is a tissue-derived nucleus alarmin that drives inflammatory responses. The regulation and function of IL-33 in renal injury, however, is not well understood. To investigate the involvement of cytokines in the pathogenesis of renal injury and fibrosis, we performed the mouse renal injury model induced by unilateral urinary obstruction (UUO) and analyze the differentially upregulated genes between the obstructed and the contralateral unobstructed kidneys using RNA sequencing (RNAseq). Our RNAseq data identified IL33 and its receptor ST2 were upregulated in the UUO kidney. Quantitative analysis confirmed that transcripts of IL33 and ST2 were upregulated in the obstructed kidneys. Immunofluorescent staining revealed that IL-33 was upregulated in Vimentin- and alpha-SMA-positive interstitial cells. By using genetically knockout mice, deletion of IL33 reduced UUO-induced renal fibrosis. Moreover, in combination with BrdU labeling technique, we observed that the numbers of proliferating tubular epithelial cells were increased in the UUO kidneys from IL33-or ST2-deficient mice compared to wild type mice. Collectively, our study demonstrated the upregulation of IL-33/ST2 signaling in the obstructed kidney may promote tubular cell injury and interstitial fibrosis. IL-33 may serve as a biomarker to detect renal injury and that IL-33/ST2 signaling may represent a novel target for treating renal diseases. -- Highlights: •Interleukin (IL)-33 was upregulated in obstructed kidneys. •Interstitial myofibroblasts expressed IL-33 after UUO-induced renal injury. •Deficiency of IL33 reduced interstitial fibrosis and promoted tubular cell proliferation.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2016

Ab initio study of point defects near stacking faults in 3C-SiC

Interactions between point defects and stacking faults in 3C-SiC are studied using an ab initio method based on density functional theory. The results show that the discontinuity of the stacking sequence considerably affects the configurations and behavior of intrinsic defects, especially in the case of silicon interstitials. The existence of an intrinsic stacking fault (missing a C-Si bilayer) shortens the distance between the tetrahedral-center site and its second-nearest-neighboring silicon layer, making the tetrahedral silicon interstitial unstable. Instead of a tetrahedral configuration with four C neighbors, a pyramid-like interstitial structure with a defect state within the band gap becomes a stable configuration. In addition, orientation rotation occurs in the split interstitials that has diverse effects on the energy landscape of silicon and carbon split interstitials in the stacking fault region. Moreover, our analyses of ionic relaxation and electronic structure of vacancies show that the built-in strain field, owing to the existence of the stacking fault, makes the local environment around vacancies more complex than that in the bulk.

36 MATERIALS SCIENCE↗