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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Discriminating the Role of Surface Hydride and Hydroxyl for Acetylene Semihydrogenation over Ceria through In Situ Neutron and Infrared Spectroscopy

Ceria has been used as a hydrogenation catalyst especially in selective alkyne hydrogenation, but the reaction mechanism regarding the role of different surface hydrogen species remains unclear. Here, we utilized in situ neutron and infrared vibration spectroscopy to show the catalytic role of cerium hydride (Ce–H) and hydroxyl (OH) groups in acetylene hydrogenation over ceria surfaces with different degree of reduction. In situ inelastic neutron scattering spectroscopy (INS) proved that not only Ce–H but also surface atomic hydrogen species on the reduced ceria surface can participate in acetylene semihydrogenation. In situ diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) results implied that bridging OH groups both on the oxidized and reduced ceria are active in the selective hydrogenation of acetylene. It appears that surface Ce–H is more reactive than the coexisting OH species on the reduced ceria surface, but over-reduction of ceria also results in strongly bound species that may lead to catalyst deactivation. These spectroscopic results clearly explain the reaction mechanism including not only the surface chemistry but also the nature of the active hydrogen species for selective hydrogenation over ceria, providing insights into the design of more active and stable ceria-based catalysts for hydrogenation reactions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Synthesis of bis(2-pyridylthio)methyl zinc hydride and catalytic hydrosilylation and hydroboration of CO 2

Here, the reactions of bis(2-pyridylthio)methane with Me 2 Zn and Zn[N(SiMe 3 ) 2 ] 2 afford [Bptm]ZnMe and [Bptm]ZnN(SiMe 3 ) 2 , thereby providing access to a variety of other [Bptm]ZnX derivatives, including the zinc hydride complex [Bptm]ZnH, which serves as a catalyst for the reduction of CO 2 and other carbonyl compounds via hydrosilylation and hydroboration.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Catalytic reduction of carbon dioxide by a zinc hydride compound, [Tptm]ZnH, and conversion to the methanol level

The zinc hydride compound, [Tptm]ZnH, may achieve the reduction of CO 2 by (RO) 3 SiH (R = Me, Et) to the methanol oxidation level, (MeO) x Si(OR) 4–x , via the formate species, HCO 2 Si(OR) 3 . Furthermore, because insertion of CO 2 into the Zn–H bond is more facile than insertion of HCO 2 Si(OR) 3 , conversion of HCO 2 Si(OR) 3 to the methanol level only occurs to a significant extent in the absence of CO 2 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP

We report a systematic study of CuPt-type ordering in hydride vapor phase epitaxy (HVPE)-grown Ga 0.5 In 0.5 P. Selected-area electron diffraction reveals ordering in samples grown on (001) GaAs substrates offcut toward (1$\overline{1}$1)B. The ordering is single-variant, occurring only on (1$\overline{1}$1)B planes and not on ($\overline{1}$11)B. Quantitative analysis of the order parameter by high-resolution x-ray diffraction (HRXRD) indicates that ordering increases with deposition temperature in samples grown at 600–700 °C with a constant gas-phase V/III ratio ~3. Ordering increases with V/III ratio in the range of 1.3–6.7 at a constant deposition temperature of 650°C. Photoluminescence measurements correlate the order parameter with Ga0.5In0.5P bandgap contraction, though the contraction is larger than expected based on the magnitude of order parameters measured by HRXRD. A possible reason for this discrepancy is that the photoluminescence emission occurs in the lower bandgap ordered domains, which are small and evenly dispersed throughout the material. We also show that the degree of ordering decreases with growth rate, disappearing at ~60 µm/h. The HVPE-grown material exhibits a generally weaker ordering than organometallic vapor phase epitaxy (OMVPE)-grown material, likely due to the moderate V/III ratios employed, in contrast to the V/III ratios in the 100s typical of OMVPE. However, the tendency for ordering to increase with V/III ratio suggests that the same dimer-induced stress mechanism used to explain the occurrence of ordering in OMVPE-grown material also applies to HVPE. The tendencies for ordering to increase with deposition temperature and decrease with growth rate show that kinetics limit the degree of ordering, also in agreement with OMVPE trends.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2021

Compositionally graded Ga 1-x In x P buffers grown by static and dynamic hydride vapor phase epitaxy at rates up to 1 μm/min

Here, we demonstrate Ga 1-x In x P compositionally graded buffers (CGBs) grown on GaAs with lattice constants between GaAs and InP by hydride vapor phase epitaxy (HVPE). Growth rates were up to ~1 μm/min and threading dislocation density (TDD) was as low as 1.0 x 10 6 cm -2 . We studied the effect of substrate offcut direction, growth rate, and strain grading rate on CGB defect structure. We compared the effect of a “dynamic grading” style, which creates compositional interfaces via mechanical transfer of a substrate between two growth chambers, vs. “static grading” where the CGB grows in a single chamber. Dynamic grading yielded smoother grades with higher relaxation, but TDD was not significantly different between the two styles. Substrate offcut direction was the most important factor for obtaining CGBs with low defect density. (001) substrates offcut towards (111)B yielded smoother CGBs with lower TDD compared to CGBs grown on substrates offcut towards (111)A. Transmission electron microscopy of static and dynamic CGBs grown on A and B-offcuts only found evidence of phase separation in a static A-offcut CGB, indicating that the B offcut limits phase separation, which in turn keeps TDD low. Reduced growth rate led to the appearance CuPt-type atomic ordering, which affected the distribution of dislocations on the active glide planes but did not alter TDD. Higher growth rates led to smoother CGBs and did not appreciably increase TDD as otherwise predicted by steady-state models of plastic relaxation. These results show HVPE’s promise for lattice-mismatched applications and low-c ost InP virtual substrates on GaAs

36 MATERIALS SCIENCE↗
DOE OSTI2021

Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

We present an inverted metamorphic rear heterojunction ~1.0 eV GaInAs solar cell deposited by dynamic hydride vapor phase epitaxy (D-HVPE) with high growth rate. This device uses a Ga 1-x In x P compositionally graded buffer (CGB) to bridge the lattice constant gap between the GaAs substrate and the Ga0.71In0.29As emitter layer. High-resolution x-ray diffraction and transmission electron microscopy confirm that the Ga 0.71 In 0.29 As emitter is grown lattice-matched to the in-plane lattice constant of the CGB with minimal generation of defects at the GaInAs/GaInP interface. The device contains a threading dislocation density of 2.3 × 10 6 cm -2 , a level that enables high-performance minority carrier devices and is comparable to previously demonstrated GaInP CGBs grown by D-HVPE. The device exhibits an open-circuit voltage of 0.589 V under a one-sun AM1.5G illumination condition and a bandgap-voltage offset of 0.407 V, indicating metamorphic epitaxial performance nearly equal to state-of-the-art devices. We analyze the dark current of the device and determine that reducing recombination in the depletion region, which can be achieved by reducing the threading dislocation density and optimizing the device doping density, will improve the device performance. Furthermore, the CGB and device layers, comprising ~8 µm of thickness, are grown in under 10 min, highlighting the ability of D-HVPE to produce high-quality metamorphic devices of all types with the potential for dramatically higher throughput compared to present technology.

14 SOLAR ENERGY↗
DOE OSTI2021

Isotherm measurements of high-pressure metal hydrides for hydrogen compressors

Hydrogen absorption and desorption isotherms have been measured for several metal hydride alloys identified as possible candidates in the high-pressure (i.e. >80 MPa) stage of a two-stage hydrogen compressor. The isotherms were obtained using two independent Sieverts volumetric test systems built specifically for measuring hydrogen absorption and desorption parameters from 0.10 to 100 MPa. The results obtained enabled us to identify the alloy Ti 0.8 Zr 0.2 Fe 1.6 V 0.4 as the most viable of the candidates investigated for use in the high-pressure stage of a prototype two-stage 80+ MPa compressor, as it produced the highest desorption pressures at moderate temperatures. Issues and challenges in determining reliable isotherms at pressures >50 MPa are also described.

08 HYDROGEN↗
DOE OSTI2023

Structure, stability, and superconductivity of N-doped lutetium hydrides at kbar pressures

Here, the structure of the material responsible for the room temperature and near ambient pressure superconductivity reported in an N-doped lutetium hydride has not been conclusively determined. Herein, density functional theory calculations are performed in an attempt to uncover what it might be. Guided by a range of strategies including crystal structure prediction and modifications of existing structure types, we present an array of Lu-N-H phases that are dynamically stable at experimentally relevant pressures. Although none of the structures found are thermodynamically stable, and none are expected to remain superconducting above ~17 K at 10 kbar, a number of metallic compounds with fcc Lu lattices – as suggested by the experimental X-ray diffraction measurements of the majority phase – are identified. The system whose calculated equation of states matches best with that measured for the majority phase is fluorite-type LuH 2 , whose 10 kbar superconducting critical temperature was estimated to be 0.1 K using the Allen-Dynes modified McMillan equation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Planarization of Rough (100) GaAs Substrates via Growth by Hydride Vapor Phase Epitaxy

Wafer reuse techniques help offset the cost of III-V growth substrates by using a single wafer for multiple growths, but costly re-polishing after device removal limits the end benefit. In this work, we present planarization growth by hydride vapor-phase epitaxy (HVPE), a potentially low-cost growth technique, as a method of smoothing rough substrates for subsequent high-quality device growth without the need for polishing. First, we show there is a threshold for allowable substrate roughness without device degradation by comparing devices grown by organometallic vapor-phase epitaxy (OMVPE) on epi-ready polished and pre-polished substrates that did not have the final epi-ready polish. We then demonstrate successful smoothing with HVPE growth on substrates with different surface morphologies, with features ranging from general roughness to large facets. Initial devices grown by HVPE on a pre-polished substate showed no degradation compared to a control wafer, indicating that planarizing rough substrates through HVPE growth is a promising path toward being able to use rough substrates directly for growth, without costly polishing steps.

GaAs↗
DOE OSTI2025

Integrating Metal-Hydride and Gas-Detector for Tritium Gas Detection

Detection of trace amounts of environmental tritium is a challenging problem, driving the need for field-deployable systems that offer high sensitivity, selectivity, and minimal false positives. We present a technique for high-sensitivity, high-selectivity tritium measurement, which integrates metal-hydride and gas-detector concepts into a compact field-deployable tritium sensor. A hydrogen-storage metal embedded in a gas proportional counter selectively absorbs protium (1H)/tritium (3H), which are subsequently released into the counter volume with a reduced radiation background. Ionizations induced by 3H beta particles are then measured in proportional counting mode, achieving high detection efficiency. Preliminary studies conducted with palladium (Pd) thin films coated on stainless-steel substrates demonstrated 3H absorption and metal-tritide formation, followed by 3H desorption upon heating the metal-tritide. These processes were confirmed using activity concentrations measured by a commercial tritium monitor and pulse height spectra acquired from a custom-built detector.

Gas-proportional counter↗
DOE OSTI2022

Comparative Critical Mass Calculations for NNL and ENDF/B-VIII.0 Zirconium Hydride Thermal Neutron Scattering Laws

Zirconium hydride (ZrH x ) is a moderator material for TRIGA reactors and historical space reactor systems, such as SNAP-10A. Thermal neutron scattering laws (TSL) for two phases of this material, δ and ε, have been previously evaluated by Naval Nuclear Laboratory (NNL) and submitted to the National Nuclear Data Center (NNDC) for inclusion in the US national ENDF/B-VIII.1 nuclear data library. In contrast to the current ENDF/B-VIII.0 TSL evaluations, which consider only a single phase, the new evaluations are derived from separate ab initio calculations for both phases and include coherent elastic effects of the zirconium sublattice. To estimate the impact of these changes to the TSL evaluation of this material, comparative critical mass calculations were performed with MC21 for homogenous mixtures of high- enriched uranium (HEU) and ZrH x in bare and water reflected sphere configurations. These calculations yield an impact on the estimated critical mass as a function of 235 U loading density with maximum differences as large as 1% - 5% for over-moderated thermal spectrum systems. Consequently, the NNL TSL evaluations are anticipated to have a small impact on criticality calculations of thermal reactor systems regardless of the material phase. Nevertheless, characteristic differences exist in the predicted thermal spectra as function of energy for the two sets of TSL evaluations, which are attributed to difference in the underlying phonon density of states of hydrogen bound in ZrH x .

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Radiation Effects in III-V Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

The recent development of hydride vapor phase epitaxy (HVPE) is potentially promising as a route to lower the cost of high-efficiency III-V solar cells for space applications. HVPE produces the same materials and device structures as the industry-standard organometallic vapor phase epitaxy (OMVPE) process, and although HVPE has shown promising device efficiencies, it lags the OMVPE growth technique in technical maturity. For example, there are no reports of the performance of HVPE-grown devices in radiation environments. There is an expectation that high-quality (that is, single crystal and low-defect) III-V materials will behave similarly regardless of the growth method. However, it is important to verify assumptions as facts. In this project, we produced materials and devices using both HVPE and OMVPE at NREL and irradiated them using 1 MeV electrons to ascertain the effect of radiation on the materials. We also performed initial work on producing more radiation-hard structures, including devices with the pn junction at the front of the device, and devices with a graded doping profile, both of which help with radiation tolerance. Measurements of the devices post radiation exposure showed that the open-circuit voltage (V OC ) of the HVPE-grown solar cells degraded least on a percent basis, although they also started from a lower baseline than the OMVPE-grown devices. All solar cells reached approximately the same V OC after irradiation, indicating that the dose used was sufficient to degrade all device equally. The short-circuit current in the HVPE devices did degrade more than the other solar cells, and this was attributed to a higher-than-expected doping density in the base layer of that cell. The results of these experiments, while by no means comprehensive, do not show any material difference in the radiation effects in OMVPE- and HVPE-grown materials and devices.

14 SOLAR ENERGY↗
DOE OSTI2023

Processes at lithium-hydride/deuteride surfaces upon low energy impact of H/D

Sputtering, reflection, and retention processes at amorphous and crystalline lithium hydride surfaces due to impact of low energy (1–100 eV) hydrogen and deuterium atoms over the range of 0 o −85 o angle of incidence at 300 K surface temperature were investigated by atomistic computational methods. Classical molecular dynamics simulations were performed with improved reactive bond-order force field (ReaxFF) potentials that include long-range polarization effects. In addition to probabilities of surface processes, the energy and angular spectra of ejected particles were obtained. Comparison of these results with those previously obtained on pristine lithium surfaces indicates the importance of saturation of the Li surface and near-surface region with hydrogen. We show that such saturation, which is typical in both laboratory and fusion device experiments with lithium coating of the plasma-facing surfaces, significantly changes the surface processes with hydrogen irradiation in the understudied low-energy region of impact energies.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Probing Boron Vacancy Complexes in h-BN Semi-Bulk Crystals Synthesized by Hydride Vapor Phase Epitaxy

Hexagonal BN (h-BN) has emerged as an important ultrawide bandgap (UWBG) semiconductor (Eg~6 eV). The crystal growth technologies for producing semi-bulk crystals/epilayers in large wafer sizes and understanding of defect properties lag decades behind conventional III-nitride wide bandgap (WBG) semiconductors. Here we report probing of boron vacancy (VB)-related defects in freestanding h-BN semi-bulk wafers synthesized by hydride vapor phase epitaxy (HVPE). A photocurrent excitation spectroscopy (PES) was designed to monitor the transport of photoexcited holes from deep-level acceptors. A dominant transition line at 1.66 eV with a side band near 1.62 eV has been directly observed, which matches well with the calculated energy levels of 1.65 for the VB-H deep acceptor in h-BN. The identification of VB complexes via PES measurement was further corroborated by the temperature-dependent dark resistivity and secondary ion mass spectrometry measurements. The results presented here suggested that it is necessary to focus on the optimization of V/III ratio during HVPE growth to minimize the generation of VB-related defects and to improve the overall material quality of h-BN semi-bulk crystals. The work also provided a better understanding of how VB complexes behave and affect the electronic and optical properties of h-BN.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Study of Anharmonicity in Zirconium Hydrides Using Inelastic Neutron Scattering and Ab-Initio Computer Modeling

The anharmonic phonon behavior in zirconium hydrides and deuterides, including ϵ-ZrH 2 , γ-ZrH, and γ-ZrD, has been investigated from aspects of inelastic neutron scattering (INS) and lattice dynamics calculations within the framework of density functional theory (DFT). The harmonic model failed to reproduce the spectral features observed in the experimental data, indicating the existence of anharmonicity in those materials and the necessity of further explanations. Here, we present a detailed study on the anharmonicity in zirconium hydrides/deuterides by exploring the 2D potential energy surface of hydrogen/deuterium atoms and solving the corresponding 2D single-particle Schrödinger equation to obtain the eigenfrequencies, which are then convoluted with the instrument resolution. The convoluted INS spectra qualitatively describe the anharmonic peaks in the experimental INS spectra and demonstrate that the anharmonicity originates from the deviations of hydrogen potentials from quadratic behavior in certain directions; the effects are apparent for the higher-order excited vibrational states, but small for the ground and first excited states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗