SEARCH · Engineering Papers

Results for “High-voltage”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 289 records · Page 16

All sources NASA NTRS DOE OSTI

NASA NTRS1994

Parasitic current collection by solar arrays in LEO

Solar cells at potentials positive with respect to a surrounding plasma collect electrons. Current is collected by the exposed high voltage surfaces: the interconnects and the sides of the solar cells. This current is a drain on the array power that can be significant for high-voltage arrays. In addition, this current influences the current balance that determines the floating potential of the spacecraft. One of the objectives of the Air Force (PL/GPS) PASP Plus experiment is an improved understanding of parasitic current collection. As part of the PASP Plus program, we are using computer modeling to improve our understanding of the physical processes that control parasitic current collection.

Davis, Victoria A.↗

NASA NTRS1995

Modeling of DC spacecraft power systems

Future spacecraft power systems must be capable of supplying power to various loads. This delivery of power may necessitate the use of high-voltage, high-power dc distribution systems to transmit power from the source to the loads. Using state-of-the-art power conditioning electronics such as dc-dc converters, complex series and parallel configurations may be required at the interface between the source and the distribution system and between the loads and the distribution system. This research will use state-variables to model and simulate a dc spacecraft power system. Each component of the dc power system will be treated as a multiport network, and a state model will be written with the port voltages as the inputs. The state model of a component will be solved independently from the other components using its state transition matrix. A state-space averaging method is developed first in general for any dc-dc switching converter, and then demonstrated in detail for the particular case of the boost power stage. General equations for both steady-state (dc) and dynamic effects (ac) are obtained, from which important transfer functions are derived and applied to a special case of the boost power stage.

Berry, F. C.↗

NASA NTRS1994

Aircraft electric field measurements: Calibration and ambient field retrieval

An aircraft locally distorts the ambient thundercloud electric field. In order to determine the field in the absence of the aircraft, an aircraft calibration is required. In this work a matrix inversion method is introduced for calibrating an aircraft equipped with four or more electric field sensors and a high-voltage corona point that is capable of charging the aircraft. An analytic, closed form solution for the estimate of a (3 x 3) aircraft calibration matrix is derived, and an absolute calibration experiment is used to improve the relative magnitudes of the elements of this matrix. To demonstrate the calibration procedure, we analyze actual calibration date derived from a Lear jet 28/29 that was equipped with five shutter-type field mill sensors (each with sensitivities of better than 1 V/m) located on the top, bottom, port, starboard, and aft positions. As a test of the calibration method, we analyze computer-simulated calibration data (derived from known aircraft and ambient fields) and explicitly determine the errors involved in deriving the variety of calibration matrices. We extend our formalism to arrive at an analytic solution for the ambient field, and again carry all errors explicitly.

Koshak, William J.↗

NASA NTRS1995

Texturing Copper To Reduce Secondary Emission Of Electrons

Ion-beam process produces clean, deeply textured surfaces on copper substrates with reduced secondary electron emission. In process, molybdenum ring target positioned above and around copper substrate. Target potential repeatedly switched on and off. Switching module described in "High-Voltage MOSFET Switching Circuit" (LEW-15986). Useful for making collector electrodes for traveling-wave-tube and klystron microwave amplifiers, in which secondary emission of electrons undesirable because of reducing efficiency.

Jensen, Kenneth A.↗

NASA NTRS1996

Electromagnetic radiation generated by arcing in low density plasma

An unavoidable step in the process of space exploration is to use high-power, very large spacecraft launched into Earth orbit. Obviously, the spacecraft will need powerful energy sources. Previous experience has shown that electrical discharges occur on the surfaces of a high-voltage array, and these discharges (arcs) are undesirable in many respects. Moreover, any high voltage conductor will interact with the surrounding plasma, and that interaction may result in electrical discharges between the conductor and plasma (or between two conductors with different potentials, for example, during docking and extravehicular activity). One very important aspect is the generation of electromagnetic radiation by arcing. To prevent the negative influence of electromagnetic noise on the operation of spacecraft systems, it seems necessary to determine the spectra and absolute levels of the radiation, and to determine limitations on the solar array bias voltage that depend on the parameters of LEO plasma and the technical requirements of the spacecraft equipment. This report describes the results of an experimental study and computer simulation of the electromagnetic radiation generated by arcing on spacecraft surfaces. A large set of high quality data was obtained during the Solar Array Module Plasma Interaction Experiment (SAMPIE, flight STS-62) and ground test. These data include the amplitudes of current, pulse forms, duration of each arc, and spectra of plasma waves. A theoretical explanation of the observed features is presented in this report too. The elaborated model allows us to determine the parameters of the electromagnetic noise for different frequency ranges, distances from the arcing site, and distinct kinds of plasma waves.

Vayner, Boris V.↗

NASA NTRS1996

Study of a High Voltage Ion Engine Power Supply

A complete laboratory breadboard version of a ion engine power converter was built and tested. This prototype operated on a line voltage of 80-120 Vdc, and provided output ratings of 1100 V at 1.8 kW, and 250 V at 20 mA. The high-voltage (HV) output voltage rating was revised from the original value of 1350 V at the beginning of the project. The LV output was designed to hold up during a 1-A surge current lasting up to 1 second. The prototype power converter included a internal housekeeping power supply which also operated from the line input. The power consumed in housekeeping was included in the overall energy budget presented for the ion engine converter. HV and LV output voltage setpoints were commanded through potentiometers. The HV converter itself reached its highest power efficiency of slightly over 93% at low line and maximum output. This would dip below 90% at high line. The no-load (rated output voltages, zero load current) power consumption of the entire system was less than 13 W. A careful loss breakdown shows that converter losses are predominately Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) conduction losses and HV rectifier snubbing losses, with the rectifier snubbing losses becoming predominant at high line. This suggests that further improvements in power efficiency could best be obtained by either developing a rectifier that was adequately protected against voltage overshoot with less snubbing, or by developing a pre-regulator to reduced the range of line voltage on the converter. The transient testing showed the converter to be fully protected against load faults, including a direct short-circuit from the HV output to the LV output terminals. Two currents sensors were used: one to directly detect any core ratcheting on the output transformer and re-initiate a soft start, and the other to directly detect a load fault and quickly shut down the converter for load protection. The finished converter has been extensively fault tested without failure. The finished converter has been packaged suitable for use as a laboratory prototype for further testing. The finished converter is readily transportable. An article on design issues for high voltage converters for ion engines is included as an attachement.

Stuart, Thomas A.↗

NASA NTRS1996

Survey of Experimental Results From One Year of PASP PLUS Orbital Operation

With PASP Plus as its primary payload, the APEX satellite was launched by a standard Pegasus rocket released from a NASA B-52 aircraft on 3 August 1994. A 70 deg inclination, 363 km X 2550 km orbit was achieved, allowing both investigation of space plasma effects on high-voltage operation in the perigee region and investigation of space radiation effects on array power output from passage through the inner radiation belt in the apogee region. Data gathering by PASP Plus was begun on 7 Aug 94 and ended on 11 Aug 95. In one year, PASP Plus collected an order of magnitude more data on environmental interactions on solar arrays than all previous space-borne photovoltaic experiments combined. The test arrays flown and the interactions-measuring and space-environment sensors of PASP Plus are described. The results of measurements of leakage current under test-array positive biasing and arc rates under negative biasing as a function of bias voltage, plasma density, array orientation, and other conditions are presented. The results of measurements of test-array power-output degradation caused by space radiation are also examined.

PHOTOVOLTAIC EFFECT↗

NASA NTRS1961

Magnetic Ignition of Pulsed Gas Discharges in Air of Low Pressure in a Coaxial Plasma Gun

The effect of an axial magnetic field on the breakdown voltage of a coaxial system of electrodes has been investigated by earlier workers. For low values of gas pressure times electrode spacing, the breakdown voltage is decreased by the application of the magnetic field. The electron cyclotron radius now assumes the role held by the mean free path in nonmagnetic discharges and the breakdown voltage becomes a function of the magnetic flux density. In this paper the dependence of the formative time lag as a function of the magnetic flux density is established and the feasibility of using a magnetic field for igniting high-voltage, high-current discharges is shown through theory and experiment. With a 36 microfarad capacitor bank charged to 48,000 volts, a peak current of 1.3 x 10( exp 6) amperes in a coaxial type of plasma gun was achieved with a current rise time of only 2 microseconds.

Thom, Karlheinz↗

NASA NTRS1995

The strength of a calcified tissue depends in part on the molecular structure and organization of its constituent mineral crystals in their organic matrix

High-voltage electron-microscopic tomographic (3D) studies of the ultrastructural interaction between mineral and organic matrix in a variety of calcified tissues reveal different crystal structural and organizational features in association with their respective organic matrices. In brittle or weak pathologic or ectopic calcifications, including examples of osteogenesis imperfecta, calciphylaxis, calcergy, and dermatomyositis, hydroxyapatite crystals occur in various sizes and shapes and are oriented and aligned with respect to collagen in a manner which is distinct from that found in normal calcified tissues. A model of collagen-mineral interaction is proposed which may account for the observed crystal structures and organization. The results indicate that the ultimate strength, support, and other mechanical properties provided by a calcified tissue are dependent in part upon the molecular structure and arrangement of its constituent mineral crystals within their organic matrix.

Non-NASA Center↗

NASA NTRS1948

Altitude-Wind-Tunnel Investigation of a 4000-Pound-Thrust Axial-Flow Turbojet Engine. II - Operational Characteristics: Operational Characteristics - II

An investigation was conducted in the Cleveland altitude wind tunnel to determine the operational characteristics of an axial flow-type turbojet engine with a 4000-pound-thrust rating over a range of pressure altitudes from 5,000 to 50,OOO feet, ram pressure ratios from 1.00 to 1.86, and temperatures from 60 deg to -50 deg F. The low-flow (standard) compressor with which the engine was originally equipped was replaced by a high-flow compressor for part of the investigation. The effects of altitude and airspeed on such operating characteristics as operating range, stability of combustion, acceleration, starting, operation of fuel-control systems, and bearing cooling were investigated. With the low-flow compressor, the engine could be operated at full speed without serious burner unbalance at altitudes up to 50,000 feet. Increasing the altitude and airspeed greatly reduced the operable speed range of the engine by raising the minimum operating speed of the engine. In several runs with the high-flow compressor the maximum engine speed was limited to less than 7600 rpm by combustion blow-out, high tail-pipe temperatures, and compressor stall. Acceleration of the engine was relatively slow and the time required for acceleration increased with altitude. At maximum engine speed a sudden reduction in jet-nozzle area resulted in an immediate increase in thrust. The engine started normally and easily below 20,000 feet with each configuration. The use of a high-voltage ignition system made possible starts at a pressure altitude of 40,000 feet; but on these starts the tail-pipe temperatures were very high, a great deal of fuel burned in and behind the tail-pipe, and acceleration was very slow. Operation of the engine was similar with both fuel regulators except that the modified fuel regulator restricted the fuel flow in such a manner that the acceleration above 6000 rpm was very slow. The bearings did not cool properly at high altitudes and high engine speeds with a low-flow compressor, and bearing cooling was even poorer with a high-flow compressor.

Fleming, William A.↗

NASA NTRS1996

Highly Efficient Amplifier for Ka-Band Communications

An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power level of 1.1 W was achieved with a 12-dB gain and a 36-percent efficiency. This represents the best reported combination of power and efficiency at this frequency. In addition to delivering excellent power and gain, this Ka-band MMIC power amplifier has an efficiency that is 10 percent greater than existing designs. The unique design offers an excellent match for spacecraft applications since the amplifier supply voltage is closely matched to the typical value of spacecraft bus voltage. These amplifiers may be used alone in applications of 1 W or less, or several may be combined or used in an array to produce moderate power, Ka-band transmitters with minimal power combining and less thermal stress owing to the combination of excellent efficiency and power output. The higher voltage operation of this design may also save mass and power because the dc-dc power converter is replaced with a simpler voltage regulator.

Source record↗

NASA NTRS1997

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗

NASA NTRS1996

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗

NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗

NASA NTRS1995

NASA Tech Briefs, November 1995

The contents include: 1) Mission Accomplished; 2) Resource Report: Marshall Space Flight Center; 3) NASA 1995 Software of the Year Award; 4) Microbolometers Based on Epitaxial YBa2Cu3O(sub 7-x) Thin Films; 5) Garnet Random-Access Memory; 6) Fabrication of SNS Weak Links on SOS Substrates; 7) High-Voltage MOSFET Switching Circuit; 8) Asymmetric Switching for a PWM H-Bridge Power Circuit; 9) Better Ohmic Contacts for InP Semiconductor Devices; 10) Low-Bandgap Thermovoltaic Materials and Devices; 11) Digital Frequency-Differencing Circuit; 12) Imaging Magnetometer; 13) Computer-Assisted Monitoring of a Complex System; 14) Buffered Telemetry Demodulator; 15) Compact Multifunction Inspection Head; 16) Optical Detection of Fractures in Ceramic Diaphragms; 17) Eddy-Current Detection of Cracks in Reinforced Carbon/Carbon; 18) Apparent Thermal Conductivity of Multilayer Insulation; 19) Optimizing Misch-Metal Compositions in Metal Hydride Anodes; 20) Device for Sampling Surface Contamination; 21) Probabilistic Failure Assessment for Fatigue; 22) Probabilistic Fatigue and Flaw-Propagation Analysis; 23) Windows Program for Driving the TDU-850 Printer; 24) Subband/Transform MATLAB Functions for Processing Images; 25) Computing Equilibrium Chemical Compositions; 26) Program Processes Thermocouple Readings; 27) ICAN-Second-Generation Integrated Composite Analyzer; 28) Integrated Composite Analyzer with Damping Capabilities; 29) Computing Efficiency of Transfer of Microwave Power; 30) Program Calculates Power Demands of Electronic Designs; 31) Cost-Estimation Program; 32) Program Estimates Areas Required by Electronic Designs; 33) Program to Balance Mapped Turbopump Assemblies; 34) BiblioTech; 35) Controlling Mirror Tilt With a Bimorph Actuator; 36) Burst-Disk Device Simulates Effect of Pyrotechnic Device; 37) Bearing-Mounting Concept Accommodates Thermal Expansion; 38) Parallel-Plate Acoustic Absorbers for Hot Environments; 39) Adjustable-Length Strut Withstands Large Cyclic Loads; 40) Tool Indicates Contact Angles in Bearing Raceways; 41) Gravity Slides With Magnetic Braking; 42) High-Torque, Lightweight, Pneumatically Driven Wrench for Small Spaces; 43) Device for Testing Compatibility of an O-Ring; 44) Magnetic Heat Pump Containing Flow Diverters; 45) Variable-Tilt Helicopter Rotor Mast; 46) "Beach-Ball" Robotic Rovers; 47) Apparatus Would Measure Temperatures of Ball Bearings; 48) Flexible Borescope for Inspecting Ducts; 49) Texturing Copper To Reduce Secondary Emission of Electrons; 50) Automated Laser Cutting in Three Dimensions; 51) Algorithm Helps Monitor Engine Operation; 52) Flexible Revision of Data-Processing Communications; 53) Software for Managing the Use of Land; 54) Thermal Strap Increases Cryocooling Efficiency; 55) Reversible Nut With Engagement Indication; 56) Control Algorithms for Kinematically Redundant Manipulators; 57) Computed Hydrogen-Flow Splits in a Rocket Engine; 58) Pressure and Thermal Modeling of Rocket Launches; 59) Field of View of a Spacecraft Antenna: Analysis and Software; 60) Digital Controller for Laser-Beam-Steering Subsystem; 61) More About Beam-Steering Subsystem for Laser Communication; 62) Digital Controller for Laser-Beam-Steering Subsystem: Part 2; 63) Interface Circuit Board for Space-Shuttle Communications; 64) Automated Planning of Spacecraft Telecommunications; 65) Artifacts of Spectral Analysis of Instrument Readings; 66) Neural-Network Controller for Vibration Suppression; 67) Adaptive Finite-Element Computation in Fracture Mechanics; 68) Attitude Control for the Cassini Spacecraft; 69) Analytical Model for Fluid Dynamics in a Microgravity Environment; 70) Study of Rocket-Engine Joints Bonded by NVCU/NARloy-Z; 71) Improved Silicon Nitride for Advanced Heat Engines; 72) Parameters for Welding Aluminum/Lithium Alloys; 73) Lightweight Composite Intertank Structure; 74) Foil Patches Seal Small Vacuum Leaks; 75) Data Base on Cables and Connectors; 76) Effect of Clock Mode on Radiation Hardnessf an ADC; and 77) Fault-Tolerant Control for a Robotic Inspection System.

Source record↗

NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗

NASA NTRS1995

STRV-1B Cryocooler Vibration Suppression

The STRV-1B cryocooler vibration suppression experiment is a satellite flight demonstration of piezo vibration-suppression technology. A very small, tactical stirling-cooler was flown primarily as a vibration source. Two types of piezo actuators were demonstrated. Low-voltage piezo translators were used to move the entire cryocooler so that the tip of the coldfinger stood still. Also, high-voltage ceramic applique was bonded to the base of the coldfinger providing a second actuation method to compare with the translators. three eddy current transducers were used to measure the coldfinger tip motion relative to the experiment case. The eddy current signal drove two types of control systems. A digital adaptive-feed- forward control system was used to cancel the tip motion of the cryocooler in three dimensions. An analog-comb filter controller was also developed to contrast the two techniques. Motion suppression does nothing to suppress the unbalanced forces in the cryocooler, so a triaxial accelerometer measured the vibration of the satellite in response to the cryocooler. Satellite/ground test results from each of the experiment systems are shown and the systems are compared.

STRV-1B↗

NASA NTRSDate not supplied

Controls for Electrified Aircraft Propulsion

Advanced electrified aircraft propulsion (EAP) concepts with integrated power, propulsion, and thermal systems require the development of equally sophisticated controllers to fly safe and efficient missions. Hybrid electric aircraft utilize electric machines mechanically coupled to the engine shafts to extract and insert power for a variety of purposes. Additionally, electric machines may drive propulsive fans pulling from a combination of on-board energy storage devices and engine extracted power. NASA’s investment in hybrid electric aircraft hardware-in-the-loop testing enables controls research on representative engine models using a novel emulation and scaling methodology. High-voltage, high-power electrical powertrain presents several technical risks at altitude. High-power requires high efficiency to minimize losses. Superconducting electric machines and power distribution research at NASA has identified key challenges with potential controls solutions. These risks necessitate the development of controllers robust to model uncertainty, disturbances, and fault conditions. System health management and fault detection schemes play an important role in a multi-layer controls approach that utilizes a supervisor which oversees inner loops for the highly coupled power, propulsion, and thermal systems. Such a supervisory controller enables coordinates energy transfer between engines, energy storage devices, electric machines, propulsors, and heat exchangers. Existing methods have shown an improvement in engine operability using the hybrid electric powertrain.

Halle E Buescher↗