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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Operando real-space imaging of a structural phase transformation in the high-voltage electrode LixNi0.5Mn1.5O4

Abstract Discontinuous solid-solid phase transformations play a pivotal role in determining the properties of rechargeable battery electrodes. By leveraging operando Bragg Coherent Diffractive Imaging (BCDI), we investigate the discontinuous phase transformation in Li x Ni 0.5 Mn 1.5 O 4 within an operational Li metal coin cell. Throughout Li-intercalation, we directly observe the nucleation and growth of the Li-rich phase within the initially charged Li-poor phase in a 500 nm particle. Supported by the microelasticity model, the operando imaging unveils an evolution from a curved coherent to a planar semi-coherent interface driven by dislocation dynamics. Our data indicates negligible kinetic limitations from interface propagation impacting the transformation kinetics, even at a discharge rate of C/2 (80 mA/g). This study highlights BCDI’s capability to decode complex operando diffraction data, offering exciting opportunities to study nanoscale phase transformations with various stimuli.

Sun, Yifei (ORCID:0000000295625120)↗
DOE OSTI2020

Electrochemical studies of a high voltage Na 4 Co 3 (PO 4 ) 2 P 2 O 7 –MWCNT composite through a selected stable electrolyte

Na 4 Co 3 (PO 4 ) 2 P 2 O 7 –MWCNT composites in 1 M NaPF 6 in EC:DMC electrolytes deliver stable discharge capacities of 80 mA h g −1 and 78 mA h g −1 at normal and elevated temperatures, respectively. In a full cell configuration vs. NaTi 2 (PO 4 ) 3 –MWCNT, they deliver an initial discharge capacity of 78 mA h g −1 at 0.2C rate.

25 ENERGY STORAGE↗
DOE OSTI2020

High voltage GaN p-n diodes formed by selective area regrowth

GaN p-n diodes were formed by selective area regrowth on freestanding GaN substrates using a dry etch, followed by post-etch surface treatment to reduce etch-induced defects, and subsequent regrowth into wells. Etched-and-regrown diodes with a 150 gm diameter achieved 840 V operation at 0.5 A/cm 2 reverse current leakage and a specific on-resistance of 1.2 mΩ•cm 2 . Etched-and-regrown diodes were compared with planar, regrown diodes without etching on the same wafer. Both types of diodes exhibited similar forward and reverse electrical characteristics, which indicate that etch-induced defectivity of the junction was sufficiently mitigated soas not to be the primary cause for leakage. An area dependence for forward and reverse leakage current density was observed, suggesting that the mesa sidewall provided a leakage path.

42 ENGINEERING↗
DOE OSTI2024

Single radio frequency bucket injection in the 88-Inch Cyclotron using a pulsed high voltage chopper

A single radio frequency bucket of the 88-Inch Cyclotron is filled using a fast chopper located in the axial line. The bucket then accelerates until it reaches the deflector, at which point, it is extracted as a train of bunches. This phenomenon can be attributed to the characteristic multi-turn extraction of the cyclotron and, by simplifying the complex dynamics of a cyclotron, corresponds to the conceptual transfer function of the cyclotron. In conclusion, the confirmation of the single radio frequency bucket injection was achieved by operating the cyclotron in the third harmonic mode and observing the absence of intermediate bunches during the multiple-bunch extraction.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Thermal and Mechanical Design of a High-Voltage Power Electronics Package

This paper presents the thermal and mechanical design aspects of a power electronics package with 5-kV GaN devices. Through finite element analyses, we investigated the impact of different cooling configurations and device locations on the thermal performance and reliability of the package. We found that placing the devices closer to the direct bond copper substrate as opposed to a centered approach in the proposed double-sided cooling configuration resulted in improved heat dissipation. This approach also reduced the total number of attachment layers, thereby likely improving the reliability of the package. Furthermore, simulations revealed that the device location had a negligible impact on the thermomechanical behavior of the attachment layers, as they are more prone to the local coefficient of thermal expansion mismatch.

electronic packaging↗
DOE OSTI2023

Low Threshold, Long Wavelength Interband Cascade Lasers With High Voltage Efficiencies

Here, we report on the substantial advancement of long wavelength InAs-based interband cascade lasers (ICLs) utilizing advanced waveguides formed from hybrid cladding layers and targeting the 10-12 µm wavelength region. Modifications in the hole injector have improved carrier transport in these ICLs, resulting in significantly reduced threshold voltages (V th ) as low as 3.62 V at 80 K. Consequently, much higher voltage efficiencies were observed, peaking at about 73% at 10.3 µm and allowing for large output powers of more than 100 mW/facet. Also, low threshold current densities (J th ) of 8.8 A/cm 2 in cw mode and 7.6 A/cm 2 in pulsed mode near 10 µm were observed; a result of adjustments in the GaInSb hole well composition intended to reduce the overall strain accumulation in the ICL. Furthermore, an ICL from the second wafer operating at a longer wavelength achieved a peak voltage efficiency of 57% at 11.7 µm, with a peak output power of more than 27 mW/facet. This ICL went on to lase beyond 12 µm in both cw and pulsed modes, representing a new milestone in long wavelength coverage for ICLs with the standard W-QW active region.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Effect of Coaxial Electrode Geometry on the Electric Field Enhancement Factor for a High Voltage Vacuum Gap

We present an experimental analysis of the change in the electric field enhancement factor with varying gap size and penetration depth (P.D) of cathode into anode for a coaxial vacuum gap, diagnosed using Fowler–Nordheim analysis and optical imaging via scanning electron microscope (SEM) and time integrated Digital single lens reflex camera (DSLR). Data were collected on the Coaxial Gap Breakdown Machine (240 A, 25 kV, 150 ns, 0.1 Hz). Experiments using five different gap sizes at nine different P.Ds are compared over runs comprising 50 shots for each case. The results show a strong link between enhancement factor and gap size, with P.D and surface topology. For large gap sizes, 150, 330, and 700 μm, the average enhancement factor value increases with increasing P.D. For smaller gap sizes, 50 and 100 μm, the average enhancement factor decreases with P.D. SEM imaging before and after plasma formation for each gap size allows for quantifying surface finish, microprotrusion growth, average blast diameter, and an estimation of the surface area breakdowns occupy. Time integrated DSLR imaging analysis of the gap at each shot allows for a determination of the distribution of breakdowns about the circumference of the gap for each case tested. Here, the Fowler–Nordheim analysis allows for a quantitative analysis of the surface roughness of all gap sizes tested. Results show that for large gap sizes, the gap geometry and increasing area of breakdown is the main cause for increasing average enhancement factor. For small gap sizes, the dominant driving factor for small average enhancement factors—that subsequently decrease with P.D—is significant changes in surface topology due to an increased number of breakdowns.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Modeling the Low-Pressure High-Voltage Branch of the Paschen Curve for Hydrogen and Deuterium

A physical and numerical model of the Townsend discharge in molecular hydrogen and deuterium has been developed to meet the needs of designing a plasma-based switching device for power grid applications. Here, the model allows to predict the low-pressure branch of the Paschen curve for applied voltage in the range of several hundred kilovolts. In the regime of interest, electrons are in a runaway state and ionization by ions and fast neutrals sustains the discharge. It was essential to correctly account for both gas-phase and surface interactions (electron emission and electron backscattering), especially in terms of their dependence on particle energy. The model yields results consistent with prior data obtained for lower voltage. The three-species (electrons, ions, and fast neutrals) model successfully captures the essential physics of the process.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Machine Learning for Improved Availability of the SNS Klystron High Voltage Converter Modulators

Beam availability has increased at the SNS, however, the targeted availability is greater than 95 %, while the SNS has failed to meet lower targets in the past. The HVCM used to power the linac klystrons have been one source of lost beam time and was chosen to explore using AI/ML techniques to improve reliability. Among the possibilities being explored are automating the tuning of HVCMs and predicting component failures such as capacitor aging, rectifier assemblies containing hundreds of diodes, and insulating oil degradation. The methodology pursued includes data cleaning, de-noising, post-analysis data labeling, and machine learning model development. We explore using Long Short-Term Memory and autoencoders for anomaly detection and prognostication used to schedule maintenance. We evaluate the use of model regularizers and constraints to improve the performance of the model and investigate methods to estimate the uncertainty of the models to provide a robust prediction with statistical interoperability. This paper describes the operational experience and known failures of the HVCMs and the proposed ML methodology and the preliminary results of training the AI/ML algorithms.

Pappas, G. C.↗
DOE OSTI2021

Fielding and analyzing performance of a prototype high voltage output gas switch for Saturn

Timing spread between the thirty-six Saturn modules affects peak electrical power delivered to the Bremsstrahlung diode and can affect vacuum power flow and impedance behavior of the load. To reduce the module spread, a new megavolt gas-insulated closing switch was developed employing design techniques developed for the Z-machine laser triggered switches while retaining Saturn’s simpler electrical triggering. Two modules were temporarily outfitted with the new switches and used separately into local resistive loads (instead of the usual Saturn electron beam load). A reliable operating point and switch time jitter at that point were the goals of the experiments. The target switch reliability is less than one pre-fire in one thousand switch-shots, and a timing standard deviation of 4 nanoseconds. The switches were able to meet both requirements but the number of tests at the chosen point are limited.

43 PARTICLE ACCELERATORS↗