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At least 289 records · Page 16

In situ x-ray imaging to understand subsurface behavior during continuous wave laser drilling

A limited understanding regarding the underlying dynamics and mechanisms of material removal during continuous wave laser drilling has presented significant challenges in achieving precision and process control. Here, to address this, we employed high-fidelity, in situ synchrotron x-ray imaging to reveal previously unknown material behaviors during continuous wave laser drilling with power modulation. Our findings highlight that high-aspect ratio drill holes are achieved when the laser modulation frequency falls within the range of 8–12 kHz, provided that the laser average power and modulation amplitude levels meet the specified limits. Under these conditions, we identified a material removal mechanism driven by incremental accumulation of recoil pressure that gradually pushes material upward from deep within the substrate to the surface. This mechanism manifested as a low-frequency fluctuation in the vapor depression depth, resulting in periodic instances of material ejection. Furthermore, our study underscores that rapid expansion of the melt pool and the widening of the drill hole opening can impede effective material removal by redirecting energy from material ejection to increasing the melt pool size. This investigation contributes essential insights into the subsurface dynamics involved in the drilling of high-aspect ratio holes, furthering our fundamental understanding of this intricate process.

47 OTHER INSTRUMENTATION↗

Orientation-tunable local crystallization of Si films enabled by atomic imprint crystallization

Here, in this paper, we demonstrate area-selective crystallization of amorphous Si into tunable crystal orientations enabled by atomic imprint crystallization (AIC), where an amorphous Si layer is crystallized by solid phase epitaxy (SPE) from an externally impressed single-crystalline Si template. Using micro-patterned single-crystalline Si templates, a limited area of an amorphous Si film, where the film surface and patterned template surface are in contact, is crystallized via SPE to create an array of crystallographically aligned dots embedded in amorphous matrix. Combining AIC from the top surface and conventional SPE from the substrate, we demonstrate the fabrication of an array of crystalline dots embedded in single-crystalline matrix with tunable in-plane rotation angle. The results indicate the high tunability of the crystallization process enabled by AIC, allowing precise control of crystallographic properties of thin films with area-selectivity; such capability opens opportunities for the design of new materials for a wide range of applications in materials science.

Amorphous↗

Atmospheric pressure plasma functionalization of polystyrene

Atmospheric pressure plasma jets (APPJs) are used to improve the adhesive and hydrophilic properties of commodity hydrocarbon polymers such as polypropylene, polyethylene, and polystyrene (PS). These improvements largely result from adding oxygen functional groups to the surface. PS functionalization is of interest to produce high value biocompatible well-plates and dishes, which require precise control over surface properties. In this paper, we discuss results from a computational investigation of APPJ functionalization of PS surfaces using He/O 2 /H 2 O gas mixtures. A newly developed surface reaction mechanism for functionalization of PS upon exposure to these plasmas is discussed. A global plasma model operated in plug-flow mode was used to predict plasma-produced species fluxes onto the PS surface. A surface site balance model was used to predict oxygen-functionalization of the PS following exposure to the plasma and ambient air. We found that O-occupancy on the surface strongly correlates with the O-atom flux to the PS, with alcohol groups and cross-linked products making the largest contributors to total oxygen fraction. Free radical sites, such as alkoxy and peroxy, are quickly consumed in the post-plasma exposure to air through passivation and cross-linking. O-atom fluences approaching 10 17 cm -2 saturate the O-occupancy on the PS surface, creating functionality that is not particularly sensitive to moderate changes in operating conditions.

36 MATERIALS SCIENCE↗

The ECP SICM project: Managing complex memory hierarchies for exascale applications

The Exascale Computing Project (ECP)’s Simplified Interface to Complex Memories (SICM) effort focuses on developing universal interfaces for discovering, managing, and sharing data across complex memory hierarchies. These facilitate the exploitation of emerging memory technologies and support precise control over their various trade-offs such as high-bandwidth versus low-latency, persistent versus ephemeral, high-capacity versus low-capacity, and near-CPU versus near-GPU. SICM comprises three interrelated components: a low-level interface, a high-level interface, and a persistent-heap interface. The low-level SICM interface is intended for system and run-time developers as well as expert application developers who prefer full control of the memory objects used within their application. The high-level SICM interface builds upon the low-level interface, employing application-level profiling and analysis to optimize data management for complex memory hierarchies. The persistent-heap interface provides applications with a persistent memory allocator that can allocate custom C++ data structures in both block-storage and byte-addressable persistent memories.

97 MATHEMATICS AND COMPUTING↗

Flight evaluation of augmented controls for approach and landing of powered-lift aircraft

Flight experiments were conducted with Ames Research Center's Quiet Short-Haul Research Aircraft to evaluate the influence of highly augmented control modes on the ability of pilots to execute precision instrument flight operations in the terminal area, particularly approaches to and landings on a short runway. The aircraft is a powered-lift, short-takeoff and landing configuration that is equipped with a modern digital fly-by-wire flight control system, a head-up display, and a solar head-down display that make it possible to investigate control concepts and display format and content for full envelope, powered-lift operations. Considerable attention has been devoted in this flight program to assessing flightpath and airspeed command and stabilization modes developed using nonlinear, inverse model-following methods. The primary benefit of this control concept was realized when the pilot was required to execute a complex transition and approach under instrument conditions and in the presence of a wide range of wind and turbulence conditions.

Franklin, J. A.↗

Surface Height and Sea Ice Freeboard of the Arctic Ocean from ICESat-2: Characteristics and Early Results

We present the first winter season of surface height and sea ice freeboards of the Arctic Ocean from the new ICESat-2 (IS-2) mission. The Advanced Topographic Laser Altimeter System (ATLAS) onboard has six photon-counting beams for surface profiling with a 10-kHz pulse-rate (inter-pulse distance ~0.7m) and footprints of ~17m. Geolocated heights assigned to individual photons scattered from the surface allow significant flexibility in the construction of height distributions used in surface finding. For IS-2 sea ice products, a fixed 150-photon aggregate is used to control height precision and obtain better along-track resolution over high reflectance surfaces. Quasi-specular returns in openings as narrow as ~27m, crucial for freeboard calculations, are resolved. The fixed photon aggregate results in unique variable along-track resolutions and non-uniform sampling (17m x 27m to 17m x 200m for the strong beams) of the surface. The six profiling beams – three pairs separated by 3.3 km with a strong and weak beam in each pair – provide correlated statistics at regional length scales for assessment of beam-to-beam retrieval consistency and accuracy. Analysis shows along-track height precisions of ~2cm, and agreement in the monthly freeboard distributions across the strong beams to 1-2cm. In this paper, we describe briefly the approaches used in surface height and freeboard retrievals from ATLAS photon clouds, and detail the key features of these along-track sea ice products, focusing on the first release of data collected over the Arctic Ocean, which spans the period between October 14, 2018 – the start of data collection – and the end of March 2019.

R Kwok↗

Assessment of Sensor Data Accuracy within Gazebo/ROS for High-Precision Autonomous In-Space Robotic Operations

Modeling high-precision in-space servicing, assembly, and manufacturing operations in a simulated environment is a critical step in the development of robotic systems that will be used to autonomously assemble large-scale structures in space. Limited facility size and high costs for manufacturing prototypes make it challenging to conduct full-scale operational testing under appropriate environmental conditions; therefore, testing in a modular, high-fidelity simulation environment is necessary for verification and validation of technology and architecture designs prior to launch. Several modeling and simulation environments exist both within NASA and industry that can be used to test robotic system design and operations, including the widely used commercial tool Gazebo integrated with Robotic Operating System software. Because the performance of autonomous robotic systems relies heavily on the quality of sensor input data, this paper focuses on assessing the accuracy of pose data from an optical sensor model in the Gazebo environment against the behavior of real hardware. The results of the tests will help developers using Gazebo for large-scale, high-precision simulation to account for modeling inaccuracies within their robotic control system algorithms.

simulation↗

Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation Toward Versatile Applications

Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications. State of the art in the field is currently a two-step process: a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition (CVD) followed by delicate layer transfer onto device-relevant substrates. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation to directly synthesize large area, high quality, and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer process. Carbon (C) ion implantation was performed on Cu–Ni film deposited on a variety of device-relevant substrates. A well-controlled number of layers of graphene, primarily monolayer and bilayer, is precisely controlled by the equivalent fluence of the implanted C-atoms (1 monolayer ~4 × 10 15 C-atoms/cm 2 ). Upon thermal annealing to promote Cu-Ni alloying, the pre-implanted C-atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu. As a result, the expelled C-atoms precipitate into a graphene structure at the interface facilitated by the Cu-like alloy catalysis. After removing the alloyed Cu-like surface layer, the layer-tunable graphene on the desired substrate is directly realized. The layer-selectivity, high quality, and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films. Molecular dynamics (MD) simulations using the reactive force field (ReaxFF) were performed to elucidate the graphene formation mechanisms in this novel synthesis approach. With the wide use of ion implantation technology in the microelectronics industry, this novel graphene synthesis approach with precise layer-tunability and transfer-free processing has the promise to advance efficient graphene-device manufacturing and expedite their versatile applications in many fields.

36 MATERIALS SCIENCE↗

High-Flux, High Performance H2O2 Catalyst Bed for ISTAR

On NASA's ISTAR RBCC program packaging and performance requirements exceeded traditional H2O2 catalyst bed capabilities. Aerojet refined a high performance, monolithic 90% H202 catalyst bed previously developed and demonstrated. This approach to catalyst bed design and fabrication was an enabling technology to the ISTAR tri-fluid engine. The catalyst bed demonstrated 55 starts at throughputs greater than 0.60 lbm/s/sq in for a duration of over 900 seconds in a physical envelope approximately 114 of traditional designs. The catalyst bed uses photoetched plates of metal bonded into a single piece monolithic structure. The precise control of the geometry and complete mixing results in repeatable, quick starting, high performing catalyst bed. Three different beds were designed and tested, with the best performing bed used for tri-fluid engine testing.

Ponzo, J.↗

Genesis of a novel high-rate composite manufacturing process using large-scale additive manufacturing – compression molding (AM-CM) system: Possibilities and limitations

Oak Ridge National Laboratory (ORNL) has developed a highly automated manufacturing process for thermoplastic composites that combines the benefits of Additive Manufacturing and Compression Molding (AM-CM) to produce high-performance functional composite structures at automotive production rates. Here, the AM-CM process creates highly precise preforms by additively placing extruded fiber-filled polymers (with controlled fiber orientations and multi-material configurations) in the desired mold location before undergoing a secondary compression molding process immediately before the preform cools down. Preforms can be in the form of short, long-chopped, or continuous fiber-filled thermoplastic polymers (e.g., CF/GF-filled ABS, PC, LM-PAEK, etc.). The AM-CM process combines the benefits of controlled fiber alignment, that is only achievable in AM-printed parts with the classical CM process, which eliminates porosity and good surface finish. A preform created using AM-CM can integrate various materials to enable additional architectural functionalities, including over-molding, selective stiffening, and the incorporation of electrically or thermally conductive channels. All these advantages come with a fast part production cycle time. The AM-CM process can manufacture multi-material, multi-functional parts in under 3 min, starting from raw material (pellets) to the final product. The novel AM-CM process offers superior microstructural control and enhanced multi-functionality previously unattainable with any other traditional high-rate thermoplastic composite manufacturing method. This work covers the manufacturing concept, system development, materials and applications of AM-CM process in detail.

Kumar, Vipin [Oak Ridge National Laboratory (ORNL)↗

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Abstract Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental building block for 2D heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, an hBN/graphene (hBN/G) interface‐mediated growth process for the controlled synthesis of high‐quality monolayer hBN is proposed and further demonstrated. It is discovered that the in‐plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moiré superlattice consistent with single‐domain hBN, aligned to the underlying graphene lattice. Furthermore, it is identified that the deep‐ultraviolet emission at 6.12 eV stems from the 1s‐exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer‐scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.

2D heterostructures↗

Project Morpheus: Morpheus 1.5A Lander Failure Investigation Results

On August 9, 2012 the Morpheus 1.5A vehicle crashed shortly after lift off from the Kennedy Space Center. The loss was limited to the vehicle itself which was pre-declared to be a test failure and not a mishap. The Morpheus project is demonstrating advanced technologies for in space and planetary surface vehicles including: autonomous flight control, landing site hazard identification and safe site selection, relative surface and hazard navigation, precision landing, modular reusable flight software, and high performance, non-toxic, cryogenic liquid Oxygen and liquid Methane integrated main engine and attitude control propulsion system. A comprehensive failure investigation isolated the fault to the Inertial Measurement Unit (IMU) data path to the flight computer. Several improvements have been identified and implemented for the 1.5B and 1.5C vehicles.

Devolites, Jennifer L.↗

Cold air quench control of local crystallization environment in fully air-processed carbon-based perovskite solar cells

Carbon-based perovskite solar cells (C-PSCs) present a low-cost route to efficient photovoltaic technology. Gas quenching is an essential process commonly used for solvent extraction in scalable module fabrication using solution processes, but film quality remains highly sensitive to the localized environmental processing temperature, especially during intermediate phase transitions before perovskite film high temperature annealing. In this study, we introduce a cold air quench strategy to precisely control the local crystallization temperature that simultaneously promotes uniform crystallization and facilitates strain relaxation in fully air-processed C-PSCs. It is found that implementing dry air at 10 °C as the quenching gas yields a champion power conversion efficiency (PCE) of 20.52 %, with preferential (110) orientation and reduced, homogenized in-plane strain. This newly developed technique of a cost-effective low temperature air quenching process also enhances carrier lifetime, reduces interface recombination, and improves charge extraction. Furthermore, this work presents cold air quenching as a scalable, economic method to control perovskite crystallization and strain in C-PSC fabrication, advancing the industrial viability of high-performance perovskite modules.

14 SOLAR ENERGY↗

Coordination-Dependent Chemical Reactivity of TFSI Anions at a Mg Metal Interface

Charge transfer across the electrode–electrolyte interface is a highly complex and convoluted process involving diverse solvated species with varying structures and compositions. Despite recent advances in in situ and operando interfacial analysis, molecular specific reactivity of solvated species is inaccessible due to a lack of precise control over the interfacial constituents and/or an unclear understanding of their spectroscopic fingerprints. However, such molecular-specific understanding is critical to the rational design of energy-efficient solid–electrolyte interphase layers. We have employed ion soft landing, a versatile and highly controlled method, to prepare well-defined interfaces assembled with selected ions, either as solvated species or as bare ions, with distinguishing molecular precision. Equipped with precise control over interfacial composition, we employed in situ multimodal spectroscopic characterization to unravel the molecular specific reactivity of Mg solvated species comprising (i.e., bis(trifluoromethanesulfonyl)imide, TFSI – ) anions and solvent molecules (i.e., dimethoxyethane, DME/G1) on a Mg metal surface relevant to multivalent Mg batteries. In situ multimodal spectroscopic characterization revealed higher reactivity of the undercoordinated solvated species [Mg-TFSI-G1] + compared to the fully coordinated [Mg-TFSI-(G1) 2 ] + species or even the bare TFSI – . These results were corroborated by the computed reaction pathways and energy barriers for decomposition of the TFSI – within Mg solvated species relative to bare TFSI – . Finally, we evaluated the TFSI reactivity under electrochemical conditions using Mg(TFSI) 2 –DME-based phase-separated electrolytes representing different solvated constituents. Based on our multimodal study, we report a detailed understanding of TFSI – decomposition processes as part of coordinated solvated species at a Mg-metal anode that will aid the rational design of improved sustainable electrochemical energy technologies.

25 ENERGY STORAGE↗

Controlling Nanoscale Pore Size and Wall Composition in Polycarbonate Membranes via Atomic Layer Deposition and Sequential Infiltration Synthesis: Implications for High Water Permeance

Polymer membranes have a wide variety of applications, ranging from water treatment to energy storage. Many of these applications require precise control over the membrane porosity and surface chemistry. In this study, we explore the modification of isoporous polycarbonate (PC) track-etched membranes (PCTEs) by atomic layer deposition (ALD) and sequential infiltration synthesis (SIS) to tune the pore size and the pore wall surface chemistry. We first performed a detailed study of Al 2 O 3 ALD and SIS in PCTE using a variety of in situ and ex situ measurements. We discovered that short precursor exposure times are critical to achieve conformal Al 2 O 3 ALD in the PCTE nanopores, while longer precursor exposure times resulted in Al 2 O 3 SIS within the bulk of the PC leaving the membranes brittle. Next, we tuned the PCTE pore size via Al 2 O 3 ALD and studied its effect on the water contact angle and the water permeance. Here, we found that the membranes became more hydrophilic, and the permeance decreased with increasing ALD Al 2 O 3 cycles. Finally, we studied the effect of hydrophilic (SnO 2 )/hydrophobic (In 2 O 3 ) ALD metal oxide coatings on membrane properties. We found that the most hydrophilic SnO 2 showed the highest water flux and the least hydrophilic In 2 O 3 showed the lowest water flux through the PCTE membranes. Our results demonstrate that ALD is an effective method to tune the surface and transport properties of PCTE membranes, but care must be exercised to avoid SIS and bulk modification of the polymer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Supramolecular Metal Halide Complexes for High-Temperature Nonlinear Optical Switches

Nonlinear optical (NLO) switching materials, which exhibit reversible intensity modulation in response to thermal stimuli, have found extensive applications across diverse fields, including sensing, photoelectronics, and photonic applications. While significant progress has been made in solid-state NLO switching materials, these materials typically showcase their highest NLO performance near room temperature. However, this performance drastically deteriorates upon heating, primarily due to the phase transition undergone by the materials from non-centrosymmetric to centrosymmetric phase. Here, we introduce a new class of NLO switching materials, solid-state supramolecular compounds 18-Crown-6 ether@Cu 2 Cl 4 ·4H 2 O (1·4H 2 O), exhibiting reversible and stable NLO switching when subjected to near-infrared (NIR) photoexcitation and/or thermal stimuli. The reversible crystal structure in response to external stimuli is attributed to the presence of a weakly coordinated bridging water molecule, facilitated by hydrogen bonding/chelation interactions between the metal halide and crown-ether supramolecules. We observed an exceptionally high second-harmonic generation (SHG) signal under continuous photoexcitation, even at temperatures exceeding 110°C. In addition, the bridging water molecules within the complex can be released and recaptured in a fully reversible manner, all without requiring excessive energy input. This feature allows for precise control of SHG signal activation and deactivation through structural transformations, resulting in a high-contrast off/on ratio, reaching values in the million-fold range.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Emergent Magnetic States and Tunable Exchange Bias at 3d Nitride Heterointerfaces

Abstract Interfacial magnetism stimulates the discovery of giant magnetoresistance (MR) and spin–orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides have seldom been explored due to the difficulty in synthesizing high‐quality nitride films with correct compositions. Here, the fabrication of single‐crystalline ferromagnetic Fe 3 N thin films with precisely controlled thicknesses is reported. As film thickness decreases, the magnetization dramatically deteriorates, and the electronic state changes from metallic to insulating. Strikingly, the high‐temperature ferromagnetism is maintained in a Fe 3 N layer with a thickness down to 2 u.c. (≈8 Å). The MR exhibits a strong in‐plane anisotropy; meanwhile, the anomalous Hall resistivity reverses its sign when the Fe 3 N layer thickness exceeds 5 u.c. Furthermore, a sizable exchange bias is observed at the interfaces between a ferromagnetic Fe 3 N and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depend on the controllable bending curvature using the cylinder diameter engineering technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives toward practical applications.

Jin, Qiao↗

Temperature stability of Al(x)Ga(1-x)As (x = 0-1) thermal oxide masks for selective-area epitaxy

The use of thermal oxides of Al(x)Ga(1-x)As (x = 0-1) as masking materials for selective-area epitaxy by a organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (less than or equal to 600 C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al(0.4)Ga(0.6)As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.

Jones, Stephen H.↗