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All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Interstellar gas phase abundance of carbon, oxygen, nitrogen, copper, gallium, germanium, and krypton toward Zeta Ophiuchi

An analysis of weak (less than 10 mA) UV interstellar absorption line data obtained for the line of sight to the O9.5 IV star Zeta Oph is presented. Measurements of weak semiforbidden lines of N I, O I, Cu II, and a new UV detection of Na I are reported along with a small upper limit for C II. Interstellar detections of Ga II, Ge II, and Kr I are also presented. Ga, Ge, and Kr represent the heaviest elements detected in the ISM. A comparison of the derived column densities to cosmic abundances shows Ga to be depleted by about -1.2 dex while Ge is overabundant by +0.2 dex. Assuming Kr to be undepleted, a logarithmic cosmic abundance of Kr/H = 2.95 is obtained on the scale where H = 12.00.

Cardelli, Jason A.↗
NASA NTRS1992

Lattice-matched heteroepitaxy of wide gap ternary compound semiconductors

A variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI2 and II-IV-V2 semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI2 and II-IV-V2 compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSi(x)Ge(1-x)P2 alloys lattice-matching Si or GaP substrates are reviewed. Also, heterostructures of Cu(z)Ag(1-z)GaS2 alloys that lattice-match Si, Ge, GaP or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V2 compounds and group IV elements are realized, II-IV-V2 alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSi(x)Ge(1-x)P2.

Bachmann, Klaus J.↗
NASA NTRS1983

Low background IR detector and detector array evaluations

A technology program has been underway at Ames since 1978 to develop and evaluate detectors and integrated detector arrays for low-background astronomical applications. The approach is to evaluate existing (less than 24 micron) array technology under low-background conditions, with the aim of adapting and optimizing existing devices. For longer wavelengths, where the technology is much less mature, development is sponsored and devices are evaluated, in both discrete and array formats, for eventual applications. The status of this program has been reported previously. We rely on industrial and university sources for the detectors. Typically, after a brief functionality check in the supplier's laboratory, we work with the device at Ames to characterize its low-background performance. In the case of promising arrays or detectors, we conduct ground-based telescope testing to face the problems associated with real applications. A list of devices tested at Ames is given. In the array category, accumulation-mode charge-injection-devices (AMCIDs) appear repeatedly; this reflects our recent experience with the 2 x 64 and 16 x 16 arrays. Results from the 1 x 16 CID and InSb CCD have been reported. The status of our tests of the discrete Ge:x detectors from Lawrence Berkeley Laboratory are described below. Tests of a 1 x 2 switched sample photoconductor array are just beginning. A 32-channel CMOS multiplexer has been tested at 10 K. Low-temperature silicon MOSFETs and germanium JFETs have also been tested, primarily at Ball Aerospace. This paper describes results to date on three elements of this program: AMCID array, discrete Ge:Ga detectors, and Ge JFET preamplifiers.

Goebel, J. H.↗
NASA NTRS1993

Lattice-matched heteroepitaxy of wide gap ternary compound semiconductors

A variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI(sub 2) and II-IV-V(sub 2) semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI(sub 2) and II-IV-V(sub 2) compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSi(x)Ge(1-x)P2 alloys lattice matching Si or GaP substrates are reviewed. Also, heterostructures of Cu(z)Ag(1-z)GaS2 alloys that lattice-match Si, Ge, GaP, or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V(sub 2) compounds and group IV elements are realized, II-IV-V(sub 2) alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSi(x)Ge(1-x)P2.

Bachmann, Klaus J.↗
NASA NTRS1992

High speed jet noise research at NASA Lewis

The source noise portion of the High Speed Research Program at NASA LeRC is focused on jet noise reduction. A number of jet noise reduction concepts are being investigated. These include two concepts, the Pratt & Whitney ejector suppressor nozzle and the General Electric (GE) 2D-CD mixer ejector nozzle, that rely on ejectors to entrain significant amounts of ambient air to mix with the engine exhaust to reduce the final exhaust velocity. Another concept, the GE 'Flade Nozzle' uses fan bypass air at takeoff to reduce the mixed exhaust velocity and to create a fluid shield around a mixer suppressor. Additional concepts are being investigated at Georgia Tech Research Institute and at NASA LeRC. These will be discussed in more detail in later figures. Analytical methods for jet noise prediction are also being developed. Efforts in this area include upgrades to the GE MGB jet mixing noise prediction procedure, evaluation of shock noise prediction procedures, and efforts to predict jet noise directly from the unsteady Navier-Stokes equation.

Krejsa, Eugene A.↗
NASA NTRS1994

Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

Weinberg, I.↗
NASA NTRS1994

Semiconductor-metal graded-index composite thin films for infrared applications

Theoretical/experimental studies have been carried out on germanium:silver (Ge:Ag) graded-index composite thin films which demonstrate that graded coatings, consisting of varied concentrations of Ag with respect to the Ge film thickness, exhibit different optical properties ranging from selective infrared (IR) reflectance to broadband IR absorptance. The graded coatings have been produced by dc magnetron cosputtering of Ge and Ag and the spectral properties are found to be stable against temperature. The coatings have been applied to an infrared tunnel sensor (micro-Golay cell) to improve the device performance.

Lamb, James L.↗
NASA NTRS1996

Aspirating Seal Development: Analytical Modeling and Seal Test Rig

This effort is to develop large diameter (22 - 36 inch) Aspirating Seals for application in aircraft engines. Stein Seal Co. will be fabricating the 36-inch seal(s) for testing. GE's task is to establish a thorough understanding of the operation of Aspirating Seals through analytical modeling and full-scale testing. The two primary objectives of this project are to develop the analytical models of the aspirating seal system, to upgrade using GE's funds, GE's 50-inch seal test rig for testing the Aspirating Seal (back-to-back with a corresponding brush seal), test the aspirating seal(s) for seal closure, tracking and maneuver transients (tilt) at operating pressures and temperatures, and validate the analytical model. The objective of the analytical model development is to evaluate the transient and steady-state dynamic performance characteristics of the seal designed by Stein. The transient dynamic model uses a multi-body system approach: the Stator, Seal face and the rotor are treated as individual bodies with relative degrees of freedom. Initially, the thirty-six springs are represented as a single one trying to keep open the aspirating face. Stops (Contact elements) are provided between the stator and the seal (to compensate the preload in the fully-open position) and between the rotor face and Seal face (to detect rub). The secondary seal is considered as part of the stator. The film's load, damping and stiffness characteristics as functions of pressure and clearance are evaluated using a separate (NASA) code GFACE. Initially, a laminar flow theory is used. Special two-dimensional interpolation routines are written to establish exact film load and damping values at each integration time step. Additionally, other user-routines are written to read-in actual pressure, rpm, stator-growth and rotor growth data and, later, to transfer these as appropriate loads/motions in the system-dynamic model. The transient dynamic model evaluates the various motions, clearances and forces as the seals are subjected to different aircraft maneuvers: Windmilling restart; start-ground idle; ground idle-takeoff; takeoff-burst chop, etc. Results of this model show that the seal closes appropriately and does not ram into the rotor for all of the conditions analyzed. The rig upgrade design for testing Aspirating Seals has been completed. Long lead-time items (forgings, etc.) have been ordered.

Bharat Bagepalli↗
NASA NTRS1997

Simulation results of Pulse Shape Discrimination (PSD) for background reduction in INTEGRAL Spectrometer (SPI) germanium detectors

Pulse Shape Discrimination (PSD) for background reduction will be used in the INTErnational Gamma Ray Astrophysics Laboratory (INTEGRAL) imaging spectrometer (SPI) to improve the sensitivity from 200 keV to 2 MeV. The observation of significant astrophysical gamma ray lines in this energy range is expected, where the dominant component of the background is the beta(sup -) decay in the Ge detectors due to the activation of Ge nuclei by cosmic rays. The sensitivity of the SPI will be improved by rejecting beta(sup -) decay events while retaining photon events. The PSD technique will distinguish between single and multiple site events. Simulation results of PSD for INTEGRAL-type Ge detectors using a numerical model for pulse shape generation are presented. The model was shown to agree with the experimental results for a narrow inner bore closed end cylindrical detector. Using PSD, a sensitivity improvement factor of the order of 2.4 at 0.8 MeV is expected.

Slassi-Sennou, S. A.↗
NASA NTRS1998

Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

Fathauer, Robert W.↗
NASA NTRS1998

Advanced far infrared blocked impurity band detectors based on germanium liquid phase epitaxy

This research has shown that epilayers with residual impurity concentrations of 5 x 10(sup 13) cm(exp -3) can be grown by producing the purest Pb available in the world. These epilayers have extremely low minority acceptor concentrations, which is ideal for fabrication of IR absorbing layers. The Pb LPE growth of Ge also has the advantageous property of gettering Cu from the epilayer and the substrate. Epilayers have been grown with intentional Sb doping for IR absorption on lightly doped substrates. This research has proven that properly working Ge BIB detectors can be fabricated from the liquid phase as long as pure enough solvents are available. The detectors have responded at reach minimum wavenumbers. Optimization of the Sb doping concentration should further decrease the photoionization energy of these detectors. Ge BIB detectors have been fabricated that respond to 60 cm(exp -1) with low responsivity. Through reduction of the minority residual impurities, detector performance has reached responsivities of 1 A/W. These detectors have exhibited quantum efficiency and NEP values that rival conventional photoconductors and are expected to provide a much more sensitive tool for new scientific discoveries in a number of fields, including solid state studies, astronomy, and cosmology.

Olsen, C. S.↗
NASA NTRS2003

Reduction of Defects in Germanium-Silicon

Crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float-zone processing, detached- Bridgman growth is a promising tool to improve crystal quality, without the limitations of float zoning or the defects introduced by normal Bridgman growth. Goals of this project include the development of the detached Bridgman process to be reproducible and well understood and to quantitatively compare the defect and impurity levels in crystals grown by these three methods. Germanium (Ge) and germanium-silicon (Ge-Si) alloys are being used. At MSFC, we are responsible for the detached Bridgman experiments intended to differentiate among proposed mechanisms of detachment, and to confirm or refine our understanding of detachment. Because the contact angle is critical to determining the conditions for detachment, the sessile drop method was used to measure the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. Etch pit density (EPD) measurements of normal and detached Bridgman-grown Ge samples show a two order of magnitude improvement in the detached-grown samples. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. We have investigated the effects on detachment of ampoule material, pressure difference above and below the melt, and Si concentration; samples that are nearly completely detached can be grown repeatedly in pBN. Current work is concentrated on developing a method to make in situ pressure measurements in the growth ampoules.

Source record↗
NASA NTRS1997

Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices

Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.

Fathauer, Robert W.↗
NASA NTRS2007

TBCC Fan Stage Operability and Performance

NASA s Fundamental Aeronautics Program is investigating turbine-based propulsion systems for access to space because it provides the potential for aircraft-like, space-launch operations that may significantly reduce launch costs and improve safety. Studies performed under NASA s NGLT and the NASP High Speed Propulsion Assessment (HiSPA) program indicated a variable cycle turbofan/ramjet was the best configuration to satisfy access-to-space mission requirements because this configuration maximizes the engine thrust-to-weight ratio while minimizing frontal area. To this end, NASA and GE teamed to design a Mach 4 variable cycle turbofan/ramjet engine for access to space. To enable the wide operating range of a Mach 4+ variable cycle turbofan ramjet required the development of a unique fan stage design capable of multi-point operation to accommodate variations in bypass ratio (10X), fan speed (7X), inlet mass flow (3.5X), inlet pressure (8X), and inlet temperature (3X). The primary goal of the fan stage was to provide a high pressure ratio level with good efficiency at takeoff through the mid range of engine operation, while avoiding stall and losses at the higher flight Mach numbers, without the use of variable inlet guide vanes. Overall fan performance and operability therefore requires major consideration, as competing goals at different operating points and aeromechanical issues become major drivers in the design. To mitigate risk of meeting the unique design requirements for the fan stage, NASA and GE teamed to design and build a 57% engine scaled fan stage to be tested in NASA s transonic compressor facility. The objectives of this test are to assess the aerodynamic and aero mechanic performance and operability characteristics of the fan stage over the entire range of engine operation including: 1) sea level static take-off, 2) transition over large swings in fan bypass ratio, 3) transition from turbofan to ramjet, and 4) fan windmilling operation at high Mach flight conditions. In addition, the fan stage design was validated by performing pre-test CFD analysis using both GE proprietary and NASA s APNASA codes. Herein we will discuss 1) the fan stage design, 2) the experiment including the unique facility and instrumentation, and 3) the comparison of pre-test CFD analysis to initial aerodynamic test results for the baseline fan stage configuration. Measurements and pre-test analysis will be compared at 37%, 50%, 80%, 90%, and 100% of design speed to assess the ability of state-of-the-art design and analysis tools to meet the fan stage performance and operability requirements for turbine based propulsion for access to space.

Suder, Kenneth L.↗
NASA NTRS2007

Toward a III-V Multijunction Space Cell Technology on Si

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

Ringel, S. A.↗
NASA NTRS2009

Graded Index Silicon Geranium on Lattice Matched Silicon Geranium Semiconductor Alloy

A lattice matched silicon germanium (SiGe) semiconductive alloy is formed when a {111} crystal plane of a cubic diamond structure SiGe is grown on the {0001} C-plane of a single crystalline Al2O3 substrate such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium. A layer of Si(1-x), ,Ge(x) is formed on the cubic diamond structure SiGe. The value of X (i) defines an atomic percent of germanium satisfying 0.2277<X<1.0,(ii) is approximately 0.2777 where the layer of Si(1-x)Ge(x)interfaces with the cubic diamond structure SiGe, and (iii) increases linearly with the thickness of the layer of Si(1-x)Ge(x).

Park, Yeonjoon↗
NASA NTRS2011

Enhanced Core Noise Modeling for Turbofan Engines

This report describes work performed by MTC Technologies (MTCT) for NASA Glenn Research Center (GRC) under Contract NAS3-00178, Task Order No. 15. MTCT previously developed a first-generation empirical model that correlates the core/combustion noise of four GE engines, the CF6, CF34, CFM56, and GE90 for General Electric (GE) under Contract No. 200-1X-14W53048, in support of GRC Contract NAS3-01135. MTCT has demonstrated in earlier noise modeling efforts that the improvement of predictive modeling is greatly enhanced by an iterative approach, so in support of NASA's Quiet Aircraft Technology Project, GRC sponsored this effort to improve the model. Since the noise data available for correlation are total engine noise spectra, it is total engine noise that must be predicted. Since the scope of this effort was not sufficient to explore fan and turbine noise, the most meaningful comparisons must be restricted to frequencies below the blade passage frequency. Below the blade passage frequency and at relatively high power settings jet noise is expected to be the dominant source, and comparisons are shown that demonstrate the accuracy of the jet noise model recently developed by MTCT for NASA under Contract NAS3-00178, Task Order No. 10. At lower power settings the core noise became most apparent, and these data corrected for the contribution of jet noise were then used to establish the characteristics of core noise. There is clearly more than one spectral range where core noise is evident, so the spectral approach developed by von Glahn and Krejsa in 1982 wherein four spectral regions overlap, was used in the GE effort. Further analysis indicates that the two higher frequency components, which are often somewhat masked by turbomachinery noise, can be treated as one component, and it is on that basis that the current model is formulated. The frequency scaling relationships are improved and are now based on combustor and core nozzle geometries. In conjunction with the Task Order No. 10 jet noise model, this core noise model is shown to provide statistical accuracy comparable to the jet noise model for frequencies below blade passage. This model is incorporated in the NASA FOOTPR code and a user s guide is provided.

Stone, James R.↗
NASA NTRS2012

NASA Environmentally Responsible Aviation High Overall Pressure Ratio Compressor Research Pre-Test CFD

This paper describes a collaborative and cost-shared approach to reducing fuel burn under the NASA Environmentally Responsible Aviation project. NASA and General Electric (GE) Aviation are working together aa an integrated team to obtain compressor aerodynamic data that is mutually beneficial to both NASA and GE Aviation. The objective of the High OPR Compressor Task is to test a single stage then two stages of an advanced GE core compressor using state-of-the-art research instrumentation to investigate the loss mechanisms and interaction effects of embedded transonic highly-loaded compressor stages. This paper presents preliminary results from NASA's in-house multistage computational code, APNASA, in preparation for this advanced transonic compressor rig test.

Celestina, Mark L.↗