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Photocathode for the 8500 angstrom through 9000 angstrom range, improving efficiency by an order of magnitude, is achieved with a gallium arsenide cesium oxide photocathode. Protection of the GaAs surface from contamination during bake-out is another important function.
Newly developed Gunn oscillator is three-terminal device which consists of piece of gallium arsenide with source, drain, and gate contacts. Voltage tunable three-terminal device does not require bulky resonant cavity and allows oscillation frequency to be rapidly tuned with simple circuitry.
An optical communications system, consisting of a gallium arsenide laser transmitter and three instrumented ground sites, was evaluated during the Gemini 7 flight. Considered was the use of crewmembers as a pointing element and the exploration of the atmosphere by optical coherent radiator outside the atmosphere. Results show that beacon lasers of greater survivability in field environments are needed to overcome unfavorable cloud conditions. A 1-watt argon laser is visible at orbital altitudes.
The M512 Materials Processing Facility, which is the main item of equipment for the Skylab space manufacturing experiments is described. It is basically an electron-beam welding apparatus, consisting of a battery power supply, a 20-kV electron beam source, and a spherical 40-cm-diam vacuum chamber. It will be used to perform the M551 Metals Melting Experiment, the M552 Exothermic Brazing Experiment, the M553 Sphere Forming Experiment, the M554 Composite Casting Experiment, the M555 Gallium Arsenide Crystal Growth Experiment, the M561 Whisker-Reinforced Composites Experiment, the M562 Indium Antimonide Crystal Growth, Experiment, the M563 Mixed III-V Crystal Growth Experiment, the M564 Alkali Halide Eutectics Experiment, the M565 Silver Grids Melted in Space Experiment, and the M566 Copper-Aluminum Eutectic Experiment. Three apparatus systems designed to broaden the technical scope of the experiments and to gain experience with new experimental techniques are described. These are an electrophoretic separator, an electromagnetic levitation system, and a versatile electric furnace with an electronic control system.
Solar cells and mesa diodes were fabricated by the implantation of zinc or beryllium ions into n-type gallium arsenide. Annealing temperatures above 750 C (zinc) or 650 C (beryllium) were found to produce 50% to 100% activation of the implanted ions. Junction depths of about 0.4 micron were produced by 600 keV zinc implants or 70 keV beryllium implants. P-layer sheet resistance was about 150 ohms for 2 x 10 to the 15th power cm/2 zinc or 1 x 10 to the 15th power cm/2 beryllium implants. This is sufficiently low for efficient solar cell fabrication. Contacting procedures were improved to yield reproducibly adherent, low resistance front and back contacts.
Theoretical and experimental work reported relates to the effects of near-zero gravity on growths of crystals and metallic whiskers during Skylab and Apollo flight experiments. Studies on growth and characterization of candidate materials for flight experiments cover indium-bismuth compounds, bismuth single crystals, gallium arsenide films and single crystals, and cadmium whiskers.
Work performed during this effort was limited to two primary areas of technical concern: optical design optimization, and sensor selection. An optical system concept was established, and various system components were evaluated through experimental test sequences. Photodetectors were investigated for the applicability in meeting OPGT requirements as constrained by the photometry/polarimetry team directives. The most promising (gallium arsenide PMT) was further experimentally tested to ascertain its behavior with respect to anticipated environmental conditions. Results of testing and summary of the preceding tradeoff study effort are presented.
Ku-band microminiature modulators were designed to convert a 10 mW signal at 400 MHz to a 10 mW signal at 15 GHz. The designs incorporate gallium arsenide Schottky barrier varactors used in upper-sideband up-converters. The use of Ku-band microstrip circulators and hairpin resonator bandpass filters at 2.1 GHz and 2.5 GHz is included. The design and fabrication of a single up-conversion unit with a double up-conversion unit are compared. Various filter configurations are studies, and the use of both alumina and quartz substrates are considered. The various impedance matching networks are evaluated using computer aided design techniques.
Review of observations of circular polarization of twilight performed with a polarimeter which uses an electronically switched Pockels cell operated as a reversible quarter-wave plate to convert circular into linear polarization. The latter was then analyzed by a Wollaston prism followed by two gallium-arsenide photomultipliers. The discovery of a definite natural circular polarization at twilight does suggest that, with increased observation precision, measurements of the small daylight component are possible. These could give useful information about particles in the atmosphere and be valuable in studies of meteorology and air pollution.
Photocathode materials are discussed in terms of those that are presently available and those that are becoming available. Charts are given which illustrate the response curves of the representative photocathodes. It can be seen from the curves that a relatively new class of photocathodes has been developed with responses equal to or much better than commercially available photocathodes over a very wide spectral range. In particular, the solid gallium arsenide photocathode has an increased efficiency over the standard S-1 in the infrared region of almost two orders of magnitude. A table is presented which describes the principle photocathodes and lists some of the important characteristics of each.
The Schottky barrier solar cell is considered a possible candidate for converting solar to electrical energy both for space and terrestrial applications. Knowledge of the optical constants of the ultrathin metal film used in the cell is essential for analyzing and designing higher efficiency Schottky barrier cells. The optical constants of 7.5 -nm (75-A) gold films on gallium arsenide have been obtained. In addition, the absolute collection efficiency of Schottky barrier solar cells has been determined from measured spectral response and optical constants of the gold film.
Optical proximity sensors were used in a feedback loop to automatically position a manipulator hand for grasping. The experiment was a simplified one, involving two dimensional motion only. Two proximity sensors were mounted on the hand, and control signals derived from their outputs were used to drive the hand vertically and horizontally. The sensors employ a pulsed gallium arsenide light-emitting diode together with a silicon detector. They indicate, without contact, the approximate distance between the manipulator hand and object in the range from 5 to 12 cm. Positioning within approximately + or - 5 mm was observed. Extension of the technique to general three-dimensional control is briefly discussed.
Methods of generating microwave shear waves efficiently were studied. A new technique of mode conversion from a longitudinal wave to a shear wave was investigated and virtually 100% conversion efficiency could be obtained. Several aspects of Gunn oscillators were studied. One involved the detailed study of domains in Gunn oscillators using long samples of bulk gallium arsenide. Several new techniques were devised for measuring the properties of the domains. A fundamental theory of the efficiency of a Gunn oscillator was worked out. A computer program was devised to study the transient effect of domains passing through Gunn diodes. Some of the first planar epitaxial Gunn oscillators were made using liquid epitaxial material grown by liquid phase techniques on semi-insulating substrate. A new theory which predicted the properties of RF signals propagating in a thin film layer of GaAs was developed. The theory of the operation of a traveling wave amplifier is described.
Gallium arsenide, a commercially valuable semiconductor, has been prepared from the melt (M.P. 1237C), by vapor growth, and by growth from metallic solutions. It has been established that growth from metallic solution can produce material with high, and perhaps with the highest possible, chemical homogeneity and crystalline perfection. Growth of GaAs from metallic solution can be performed at relatively low temperatures (about 600C) and is relatively insensitive to temperature fluctuations. However, this type of crystal growth is subject to the decided disadvantage that density induced convection currents may produce variations in rates of growth at a growing surface. This problem would be minimized under reduced gravity conditions.
Manufacturing processes which are expected to show drastic changes in a space environment due to the absence of earth gravity are classified according to (1) buoyancy and thermal convection sensitive processes and (2) processes where molecular forces like cohesion and adhesion remain as the relatively strongest and hence controlling factors. Some specific process demonstration experiments carried out during the Apollo 14 mission and in the Skylab program are described. These include chemical separation by electrophoresis, the M551 metals melting experiment, the M552 exothermic brazing experiment, the M553 sphere forming experiment, the M554 composite casting experiment, and the M555 gallium arsenide crystal growth experiment.
Fabrication process and aluminum/GaAs (gallium arsenide) coupling are used to produce Schottky diodes that have high cutoff frequencies and can withstand operating temperatures in excess of 500 C.
A new effect is being developed which significantly improves the conversion efficiency of antireflection-coated metal-oxide-semiconductor (AMOS) solar cells. The effect, a marked increase in the open-circuit voltage, is produced by the addition of an oxide layer to the semiconductor. Cells using gold on n-type gallium arsenide have been made with efficiencies up to 15% in terrestrial sunlight. All processing steps are amenable to the use of low-cost polycrystalline films of GaAs in place of the single crystals now used.
High-radiance gallium arsenide (GaAs) laser operating at room temperature is utilized in optical navigation system. For efficient transformer-to-laser impedance match, laser should be connected directly to pulse transformer secondary winding.