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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

High-field/high-frequency electron spin resonances of Fe-doped β − Ga 2 O 3 by terahertz generalized ellipsometry: Monoclinic symmetry effects

We demonstrate detection and measurement of electron paramagnetic spin resonances (EPR) of iron defects in β − Ga 2 O 3 utilizing generalized ellipsometry at frequencies between 110 and 170 GHz. The experiments are performed on an Fe-doped single crystal in a free-beam configuration in reflection at 45 ∘ and magnetic fields between 3 and 7 T. In contrast with low-field, low-frequency EPR measurements, we observe all five transitions of the s = 5 / 2 high-spin state Fe 3 + simultaneously. We confirm that ferric Fe 3 + is predominantly found at octahedrally coordinated Ga sites. We obtain the full set of fourth-order monoclinic zero-field splitting parameters for both octahedrally and tetrahedrally coordinated sites by employing measurements at multiple sample azimuth rotations. The capability of high-field EPR allows us to demonstrate that simplified second-order orthorhombic spin Hamiltonians are insufficient, and fourth-order terms as well as consideration of the monoclinic symmetry are needed. These findings are supported by computational approaches based on density-functional theory for second-order and on ligand-field theory for fourth-order parameters of the spin Hamiltonian. Terahertz ellipsometry is a way to measure spin resonances in a cavity-free setup. Its possibility of varying the probe frequency arbitrarily without otherwise changing the experimental setup offers unique means of truly disentangling different components of highly anisotropic spin Hamiltonians. Published by the American Physical Society 2024

Materials Science↗
DOE OSTI2020

Onset of high-spin rotational bands in the $N = Z$ nucleus 62 Ga

The fusion-evaporation reaction 28 Si + 40 Ca at 122 MeV beam energy was used to populate high-spin states in the odd-odd $N = Z$ nucleus 62 Ga. With the combination of the Gammasphere spectrometer and the Microball CsI(Tl) charged-particle detector array the decay scheme of 62 Ga was extended beyond 10 MeV excitation energy. The onset of band structures was observed. These high-spin rotational states are interpreted and classified by means of cranked Nilsson-Strutinsky calculations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Half-life measurement of the 199-keV isomeric state in Ga 76

Background: Isomeric states in atomic nuclei are a sensitive probe of their underlying microscopic structure and can be used to study the evolution of shell structure far from stability. Recent studies have identified and provided detailed spectroscopy of isomers in neutron-rich nuclei with Z = 28-50. Isomeric states in the odd-odd gallium isotopes have been reported for all gallium isotopes from A = 72 to A = 80 with the exception of 76 Ga. Purpose: The purpose of this experiment was to observe short-lived isomeric states in the vicinity of 78 Ni. Methods: In-beam fragmentation of a 86 Kr primary beam at the National Superconducting Cyclotron Laboratory produced radioactive ions which were delivered to and deposited in a Ce Br 3 scintillator coupled to a position-sensitive photomultiplier tube. Beta-delayed γ rays were measured by ancillary HPGe clover and LaBr 3 detectors which surrounded the implantation detector. Results: The previously observed J π = 1 + , 199-keV level in 76 Ga, populated following the β decay of 76 Zn, was identified as isomeric with a half-life of 34(1) stat. (8) sys. ns. Shell-model calculations suggest this state is formed by the coupling of protons in negative-parity configurations to 1/2 - neutron configurations. Transition strengths assuming a ground-state spin of J = 2 and J = 3 were determined from the experimental data.

59 ≤ A ≤ 89↗
DOE OSTI2022

Onset of band structure in 70 Ga

Excited states in the odd-odd nucleus 70 Ga were studied using the 62 Ni( 14 C, αpn) fusion-evaporation reaction at the John D. Fox Superconducting Accelerator Laboratory at Florida State University with a 50 MeV beam. Depopulating γ rays were measured in coincidence with a Compton-suppressed Ge array consisting of three Clover detectors and seven single-crystal detectors. Analysis of γ–γ coincidences led to the addition of 16 new transitions to the 70 Ga level scheme, including transitions associated with the onset of a new positive-parity band structure likely based on the πg 9/2 ⊗ νg 9/2 configuration. Spins and parities were assigned using directional correlation of oriented nuclei (DCO) ratios and linear polarization measurements. Shell-model calculations with the JUN45 effective interaction reproduce the excitation energies of the positive-parity states reasonably well but predict negative-parity states that are typically 400–500 keV lower than observed. Furthermore, total Routhian surface calculations for the lowest positive-parity configuration with signature α = 0 indicate significant triaxiality (γ ≈ −20°) and the development of competing non-collective excitations at J = 8, corresponding to the experimentally observed onset of the positive-parity band. Similar features are found in the calculated surfaces for the lowest negative-parity states with α = 0.

59 ≤ A ≤ 89↗
DOE OSTI2025

Magnetostriction and temperature dependent Gilbert damping in boron doped Fe 80 ⁢Ga 20 thin films

Magnetic thin films with strong magnetoelastic coupling and low Gilbert damping are key materials for many magnetoelectric devices. Here, we investigated the effects of boron doping concentration on magnetostriction and temperature dependent Gilbert damping in magnetron sputtered (Fe 80 ⁢Ga 20 ) 1−𝑥 ⁢B 𝑥 films. A crystalline to amorphous structural transition was observed for a boron content near 8% and coincided with a decrease in coercivity from 76 Oe to 3 Oe. A 10% doping concentration is optimal for achieving both large magnetostriction of 48.8 ppm and low Gilbert damping of 6×10 −3 . The temperature dependence of the damping shows an increase at low temperatures with a peak around 40 K, and we associate the relative increase Δ⁢𝛼/𝛼 RT with magnetoelastic contributions to the damping, which has a maximum of 55.7% at 8% boron. An increase in the inhomogeneous linewidth broadening was observed in the structural transition regime at about 8% boron concentration. Furthermore, this study suggests that incorporation of glass forming elements, in this case boron, into Fe 80 ⁢Ga 20 is a practical pathway for simultaneously achieving enhanced magnetoelastic coupling and reduced Gilbert damping.

Cryogenics↗
DOE OSTI2024

Coupled Process/Device Modeling and Point Defect Engineering of Cu(In,Ga)Se 2 Solar Cells

Point defects directly impact solar cell device performance by limiting the carrier lifetime. In this work, density functional theory calculations are first used to determine the formation energy and diffusion energy barriers of dominant defects in Cu(In,Ga)Se 2 . Next, continuum reaction–diffusion models are developed to analyze the redistribution of defects during manufacturing processes. We estimate defect capture cross sections using a first-principles-based approach. Here, these cross sections are combined with our calculated defect profiles and trap energy levels to parameterize a Shockley–Read–Hall recombination model, which we implement into a device simulator to predict carrier lifetimes and device performance. In that way, a predictive technology computer aided design model is built to predict and optimize the performance of Cu(In,Ga)Se 2 solar cells.

14 SOLAR ENERGY↗
DOE OSTI2021

Electron Paramagentic Resonance Investigation of Mechanism of Light- and Elevated-Temperature-Induced Degradation in Ga-doped Cz Si

We report on the electron paramagnetic resonance (EPR) spectra recorded at 6 K for Ga-doped Czochralski (Cz) Si in the initial stages of light- and elevated-temperature-induced degradation (LeTID). We show that the narrow-range EPR spectrum depends on the duration of simultaneous heat and light exposure. After prolonged LeTID, the EPR intensity increases at ~334 mT. The EPR signature at ~334 mT is characteristic of Si dangling bonds, and the increase in the dangling bond density can be attributed to the bulk and not the surface. Additionally, we show that the inverse of the minority carrier lifetime in Ga-doped Cz Si samples, measured by quasi-steady-state photoconductance (QSSPC) decay, correlates with the increase in the intensity of the Si dangling bond signal measured by EPR. Based on these observations, we put forth a hypothesis connecting H to LeTID and the corresponding defect structure.

Cz Si↗
DOE OSTI2023

Melt-grown semi-insulating Mn:β-Ga 2 O 3 single crystals exhibiting unique visible absorptions and luminescence

In this study, several acceptor dopants have been explored in β-Ga 2 O 3 to produce semi-insulating substrates and epitaxial films. Fe and Mg make up the majority of research thus far; however, other transition metals provide potential alternatives for optimized performance. β-Ga 2 O 3 bulk single crystals were grown by the Czochralski and vertical gradient freeze methods with a nominal dopant concentration of 0.25 at. % Mn. Ultraviolet-visible-near infrared spectroscopy and photoluminescence revealed polarization- and orientation-dependent optical absorptions (pleochroism) coupled with an orange luminescence. All samples were electrically insulating, on the order of 10 9 –10 11 ohm cm at room temperature, indicative of acceptor doping. Actual dopant concentrations of the intentionally doped transition metal and background impurities were determined via glow discharge mass spectrometry, indicating the macroscale segregation behavior. High-temperature resistivity measurements indicated an experimental acceptor level of 1.7 ± 0.2 eV. Hydrogenation of samples resulted in an increase in the orange luminescence and O–H stretching modes observable in the infrared spectrum. Density functional theory calculations were performed to determine the likely site-occupancy and acceptor level of Mn in the bandgap.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Reexamination of 2.5-Ga “whiff” of oxygen interval points to anoxic ocean before GOE

Transient appearances of oxygen have been inferred before the Great Oxygenation Event (GOE) [~2.3 billion years (Ga) ago] based on redox-sensitive elements such as Mo and S—most prominently from the ~2.5-Ga Mount McRae Shale in Western Australia. We present new spatially resolved data including synchrotron-based x-ray spectroscopy and secondary ion mass spectrometry to characterize the petrogenesis of the Mount McRae Shale. Sediments were primarily composed of organic matter and volcanic ash (a potential source of Mo), with U-Pb ages revealing extremely low sedimentation rates. Catagenesis created bedding-parallel microfractures, which subsequently acted as fluid pathways for metasomatic alteration and recent oxidative weathering. Our collective observations suggest that the bulk chemical datasets pointing toward a “whiff” of oxygen developed during postdepositional events. Nonzero Δ 33 S in trace-metal–poor, early diagenetic pyrite and the unusually enriched organic carbon at low sedimentation rates instead suggest that environmental oxygen levels were negligible ~150 million years before the GOE.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2021

Application of an automated machine learning-genetic algorithm (AutoML-GA) coupled with computational fluid dynamics simulations for rapid engine design optimization

In recent years, the use of machine learning-based surrogate models for computational fluid dynamics (CFD) simulations has emerged as a promising technique for reducing the computational cost associated with engine design optimization. However, such methods still suffer from drawbacks. One main disadvantage is that the default machine learning (ML) hyperparameters are often severely suboptimal for a given problem. This has often been addressed by manually trying out different hyperparameter settings, but this solution is ineffective in case of a high-dimensional hyperparameter space. Besides this problem, the amount of data needed for training is also not known a priori. In response to these issues that need to be addressed, the present work describes and validates an automated active learning approach, AutoML-GA, for surrogate-based optimization of internal combustion engines. In this approach, a Bayesian optimization technique is used to find the best machine learning hyperparameters based on an initial dataset obtained from a small number of CFD simulations. Subsequently, a genetic algorithm is employed to locate the design optimum on the ML surrogate surface. In the vicinity of the design optimum, the solution is refined by repeatedly running CFD simulations at the projected optima and adding the newly obtained data to the training dataset. It is demonstrated that AutoML-GA leads to a better optimum with a lower number of CFD simulations, compared to the use of default hyperparameters. The proposed framework offers the advantage of being a more hands-off approach that can be readily utilized by researchers and engineers in industry who do not have extensive machine learning expertise.

Owoyele, Opeoluwa↗
DOE OSTI2021

In Situ Recrystallization of Co-Evaporated Cu(In,Ga)Se2 Thin Films by Copper Chloride Vapor Treatment towards Solar Cell Applications

Cu(In,Ga)Se2 (or CIGS) thin films and devices were fabricated using a modified three-stage process. Using high deposition rates and a low temperature during the process, a copper chloride vapor treatment was introduced in between the second and third stages to enhance the films properties. X-ray diffraction and scanning electron microscopy demonstrate that drastic changes occur after this recrystallization process, yielding films with much larger grains. Secondary ion mass spectrometry shows that the depth profile of many elements is not modified (such as Cu, In and Se) while others change dramatically (such as Ga and Na). Because of the competing effects of these changes, not all parameters of the solar cells are enhanced, yielding an increase of 15% in the device efficiency at the most.

14 SOLAR ENERGY↗
DOE OSTI2026

Bandgap Engineering of Ga 2 O 3 by MOCVD Through Alloying with Indium

Ga 2 O 3 and In 2 O 3 are vital semiconductors with current and future electronic device applications. Here, we study the alloying of In 2 O 3 and Ga 2 O 3 (IGO) and the associated changes in structure, morphology, band gap, and electrical transport properties. Undoped films of IGO were deposited on sapphire substrates with varying indium (In) percentage from zero to 100% by metal-organic chemical vapor deposition (MOCVD). Some films were annealed in H 2 to induce electrical conductivity. The measurements showed the optical band gap decreased by adding In; this was confirmed by density functional (DFT) calculations, which revealed that the nature of the valence band maximum and conduction band minimum strongly relate to the chemistry and that the band gap drops by adding In. The as-grown films were highly resistive except for pure In 2 O 3 , which possesses p-type conductivity, likely arising from In vacancy-related acceptor states. N-type conductivity was induced in all films after H-anneal. DFT calculations revealed that the presence of In decreases the electron effective mass, which is consistent with the electrical transport measurements that showed higher electron mobility for higher In percentage. The work revealed the successful band gap engineering of IGO and the modification of its band structure while maintaining high-quality films by MOCVD.

36 MATERIALS SCIENCE↗
DOE OSTI2023

RF operation of AlN/Al 0.25 Ga 0.75 N/AlN HEMTs with f T /f max of 67/166 GHz

Abstract We report on highly-scaled Al 0.25 Ga 0.75 N channel high electron mobility transistors. Regrown ohmic contacts covering the sidewall of the compressively strained Al 0.25 Ga 0.75 N channel exhibited a low contact resistance ofR c = 0.23 Ω · mm. Scaled devices with a T-shaped gate showed record high speed for any AlGaN-based transistors,f T /f max = 67/166 GHz, while simultaneously achieving high average breakdown field exceeding 2 MV cm −1 . The load-pull measurements performed at 10 GHz revealed a 20% peak power added efficiency with an output power density of 2 W mm −1 , which is mainly limited by the RF dispersion.

Physics↗
NASA NTRS1975

Effectiveness of spoilers on the GA(W)-1 airfoil with a high performance Fowler flap

Two-dimensional wind-tunnel tests were conducted to determine effectiveness of spoilers applied to the GA(W)-1 airfoil. Tests of several spoiler configurations show adequate control effectiveness with flap nested. It is found that providing a vent path allowing lower surface air to escape to the upper surface as the spoiler opens alleviates control reversal and hysteresis tendencies. Spoiler cross-sectional shape variations generally have a modest influence on control characteristics. A series of comparative tests of vortex generators applied to the (GA-W)-1 airfoil show that triangular planform vortex generators are superior to square planform vortex generators of the same span.

Wentz, W. H., Jr.↗
NASA NTRS1977

On the dissolution properties of GaAs in Ga

The dissolution of GaAs in Ga was studied to determine the nature and cause of faceting effects. Ga was allowed to dissolve single crystalline faces under isothermal conditions. Of the crystalline planes with low number indices, only the (100) surface showed a direct correlation of dissolution sites to dislocations. The type of dissolution experienced depended on temperature, and there were three distinct types of behavior.

Davidson, M. C.↗
NASA NTRS1977

Force and pressure tests of the GA(W)-1 airfoil with a 20% aileron and pressure tests with a 30% Fowler flap

Wind tunnel force and pressure tests were conducted for the GA(W)-1 airfoil equipped with a 20% aileron, and pressure tests were conducted with a 30% Fowler flap. All tests were conducted at a Reynolds number of 2.2 and a Mach number of 0.13. The aileron provides control effectiveness similar to ailerons applied to more conventional airfoils. Effects of aileron gaps from 0% to 2% chord were evaluated, as well as hinge moment characteristics. The aft camber of the GA(W)-1 section results in a substantial up-aileron moment, but the hinge moments associated with aileron deflection are similar to other configurations. Fowler flap pressure distributions indicate that unseparated flow is achieved for flap settings up to 40 deg., over a limited angle of attack range. Theoretical pressure distributions compare favorably with experiments for low flap deflections, but show substantial errors at large deflections.

Wentz, W. H., Jr.↗
NASA NTRS1978

Ge:Ga and Ge:Be photoconductive detectors for far infrared astronomy from a space platform

The paper describes some of the development work on gallium-doped germanium (Ge:Ga) and beryllium-doped germanium (Ge:Be) photoconductive detectors for use in far-infrared astronomical observations from a space platform such as IRAS. The paper is concerned primarily with detector performance and is divided into two major parts. The first presents the operating principles of this type of detector, while the second presents measured performance data under low-background flux conditions. It is shown that high sensitivity can be obtained from Ge:Ga and Ge:Be detectors under low-background and low-temperature conditions of operation. These detectors are useful for astronomical observations in the far-infrared over the wavelength range 30-120 microns. Major conclusions of the research work done so far are mentioned, including that detectors cut from the same crystal show reasonably good reproducibility of operating characteristics.

Bratt, P. R.↗
NASA NTRS1984

Coordination of Fe, Ga and Ge in high pressure glasses by Moessbauer, Raman and X-ray absorption spectroscopy, and geological implications

For some time, it has been recognized that the structure of silicate liquids has a great bearing on such magma properties as viscosity, diffusivity, and thermal expansion and on the extrapolation of thermodynamic quantities outside of the experimentally measurable range. In this connection it is vital to know if pressure imposes changes in melt structure similar to the pressure-induced reconstructive transformations in crystals. In the present study on 1 bar and high pressure glasses, an investigation is conducted regarding the coordination of Fe(3+) in Fe silicate glasses by Moessbauer spectroscopy. Raman spectroscopy is employed to explore the coordinations of Ge(4+) in GeO2 glasses and of Ga(3+) in NaGa silicate glasses, while the coordination of Ga(3+) in NaGaSiO4 glasses is studied with the aid of methods of X-ray absorption spectroscopy.

Fleet, M. E.↗