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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Applicability of solid state microwave technology to solar power satellites

A potential SPS design using antenna mounted GaAs FET's as the basic dc-RF converter is described, together with the rationale of why such a design may represent a viable cost effective complement to current SPS designs using tube type dc-RF converters such as klystrons or crossed field amplifiers. An initial description of a microwave antenna array module is given, together with a concept of how such a module is to be integrated into the SPS overall design. A comparison is made of several such designs using either antenna mounted or solar cell mounted dc-RF converters.

Nalos, E. J.↗
NASA NTRS1979

Velocity overshoot effect on a short-gate microwave MESFET

The device parameters of short-gate GaAs and InP FETs have been found to be dependent on the nonequilibrium velocity overshoot phenomenon. Both saturation velocity and critical field are found to be larger for shorter gates. The v-E characteristics of Pucel et al. (1975) are modified. The cutoff frequency and other parameters for GaAs, InP, and Si are given as a function of gate length and bias. The cutoff frequency of InP MESFETs with a doping density of 10 to the 17th per cu cm is only 20% higher than those of equivalent GaAs MESFETs at 300 K. Comparison with other work is also presented.

Wang, Y.-C.↗
NASA NTRS1980

Continuous control of phase-locked-loop bandwidth

Tracking loop filter with continuous bandwidth control smooths transition from wide to narrow band. Circuit was designed for Space Shuttle where bandwidth varied between 320 Hz for acquisition and 20 Hz for tracking. Field-effect transitor (FET) acts as voltage controlled variable resistance, changing time constant of filter between phase detector and voltage-controlled oscillator in phase-locked loop.

Motal, G. W.↗
NASA NTRS1980

On-board processing concepts for future satellite communications systems

The initial definition of on-board processing for an advanced satellite communications system to service domestic markets in the 1990's is discussed. An exemplar system with both RF on-board switching and demodulation/remodulation baseband processing is used to identify important issues related to system implementation, cost, and technology development. Analyses of spectrum-efficient modulation, coding, and system control techniques are summarized. Implementations for an RF switch and baseband processor are described. Among the major conclusions listed is the need for high gain satellites capable of handling tens of simultaneous beams for the efficient reuse of the 2.5 GHz 30/20 frequency band. Several scanning beams are recommended in addition to the fixed beams. Low power solid state 20 GHz GaAs FET power amplifiers in the 5W range and a general purpose digital baseband processor with gigahertz logic speeds and megabits of memory are also recommended.

Brandon, W. T.↗
NASA NTRS1979

IC Ku-band Impatt Amplifier

High efficiency GaAs low-high-low IMPATTs were investigated. Theoretical analyses were employed to establish a design window for the material parameters to maximize microwave performance. Single mesa devices yielded typically 2 to 3 W with 16 to 23% efficiency in waveguide oscillator test circuits. IMPATTs with high reliability Pt/TiW/Pt/Au metallizations were subjected to temperature stress, non-rf bias-temperature stress, and rf bias-temperature stress. Assuming that temperature is the driving force behind the dominant failure mechanism, a mean-time-to-failure considerably greater than 500,000 hours is indicated by the stress tests. A 15 GHz, 4W, 56 dB gain microstrip amplifier was realized using GaAs FETs and IMPATTs. Power combining using a 3 db Lange coupler is employed in the power output stage having an intrinsic power-added efficiency of 15.7%. Overall dc-to-rf efficiency of the amplifier is 10.8%. The amplifier has greater than a 250 MHz, 1 db bandwidth; operates over the 0 deg to 50 C (base plate) temperature range with less than 0.5 db change in the power output; weighs 444 grams; and has a volume of 220 cu cm.

Sokolov, V.↗
NASA NTRS1980

An experimental 20/30 GHz communications satellite conceptual design employing multiple-beam paraboloid reflector antennas

An experimental 20/30 GHz communications satellite conceptual design is described which employs multiple-beam paraboloid reflector antennas coupled to a TDMA transponder. It is shown that the satellite employs solid state GaAs FET power amplifiers and low noise amplifiers while signal processing and switching takes place on-board the spacecraft. The proposed areas to be served by this satellite would be the continental U.S. plus Alaska, Hawaii, Puerto Rico, and the Virgin Islands, as well as southern Canada and Mexico City. Finally, attention is given to the earth stations which are designed to be low cost.

Goldman, A. M., Jr.↗
NASA NTRS1979

Design and test of the Near Infrared Mapping Spectrometer /NIMS/ focal plane for the Galileo Jupiter Orbiter mission

A Near Infrared Mapping Spectrometer (NIMS) will fly past Jupiter on the Galileo spacecraft in 1982. The infrared detector assembly (focal plane) used in the NIMS instrument is to be passively cooled to 80 K by radiation into space. The focal plane contains 15 InSb and two silicon detectors, each with an associated dual J-FET preamp and feedback resistor. Preliminary fabrication and test experience will be described for an experimental five-channel hybrid detector assembly. Measurements of spectral noise density along with a plasma cleaning technique will also be described. The final NIMS focal plane will contain much of the design experience gained from the experimental hybrid detector assembly.

Bailey, G.↗
NASA NTRS1979

The 2.2 GHz Surface Acoustic Wave (SAW) oscillator development Ku-band frequency source development

Two 2.2 GHz SAW oscillators using aluminum nitride on sapphire (AlN/Al2O3) delay lines were fabricated. The oscillators were electronically temperature compensated and characterized. One of the oscillators was used as the frequency reference for the Ku band source; the second oscillator is available for continued evaluation. A 15 GHz frequency source was designed and fabricated. The 15 GHz source consists of a Ku band FET oscillator which is phase locked to the frequency multiplied (X7) output of the 2.2 GHz SAW reference source. The Ku band source was built using microstrip circuit designs, which are hybrid compatible. Two wafer runs of 2.2 GHz TED devices were fabricated and evaluated. The devices were mounted on microstrip test substrates and evaluated as 15 GHz divide by 7 circuits. The device evaluation indicated that in their present form the TED is not a practical circuit element.

Source record↗
NASA NTRS1981

Cryogenic switched MOSFET characterization

Both p channel and n channel enhancement mode MOSFETs can be readily switched on and off at temperatures as low as 2.8 K so that switch sampled readout of a VLWIR Ge:Ga focal plane is electronically possible. Noise levels as low as 100 rms electrons per sample (independent of sample rate) can be achieved using existing p channel MOSFETs, at overall rates up to 30,000 samples/second per multiplexed channel (e.g., 32 detectors at a rate of almost 1,000 frames/second). Run of the mill devices, including very low power dissipation n channel FETs would still permit noise levels of the order of 500 electrons/sample.

Source record↗
NASA NTRS1981

Test results of Spacelab 2 infrared telescope focal plane

The small helium cooled infrared telescope for Spacelab 2 is designed for sensitive mapping of extended, low-surface-brightness celestial sources as well as highly sensitive investigations of the shuttle contamination environment (FPA) for this mission is described as well as the design for a thermally isolated, self-heated J-FET transimpedance amplifier. This amplifier is Johnson noise limited for feedback resistances from less than 10 to the 8th power Omega to greater than 2 x 10 to the 10th power Omega at T = 4.2K. Work on the focal plane array is complete. Performance testing for qualification of the flight hardware is discussed, and results are presented. All infrared data channels are measured to be background limited by the expected level of zodiacal emission.

Young, E. T.↗
NASA NTRS1979

Small signal amplifiers and converters for millimeter wave Satcom systems

This paper describes the current state of the art and the various design tradeoffs encompassing the variety of small signal active circuit 'building blocks' deployed in millimeter wave Satcom receivers and transmitters. Included in this catagory are such low noise receiver components as parametric and FET amplifiers and low loss mixer downconverters as well as low level transmitter driver components such as resistive and varactor upconverters. Current and projected state of the art performance data will be presented along with specific examples of operating hardware.

Okean, H. C.↗
NASA NTRS1983

500-Watt, 10-GHz Solid State Amplifier

X-band system amplifies low-duty-cycle pulses. Amplifier chain consists of driver-amplifier section using GaAs FET's with hybrid couplers, and power-amplifier section using IMPATT diodes with circulators for input/output coupling and for isolation between stages. Solid-state X-band amplifier package constitutes reliable, lightweight, compact, RF source. Used for many applications involving low-and variable-duty-cycle operation as well as fixed and high-duty-cycle operation.

Russell, K. J.↗
NASA NTRS1982

Dynamic switch matrix for the TDMA satellite switching system

Future high capacity satellite communication systems require signal processing on board satellites. The on-board signal processing includes switching of RF signals between multiple antennas to provide interconnection between the uplink and downlink beams. This paper describes the development of a dynamic switch matrix for a TDMA satellite switching system to be used in the next generation communications satellites. In this paper, a dynamic switch matrix, which includes the microwave switch matrix, the distribution control unit and the timing source, will be described. Several different microwave switch matrix architectures and switching devices were evaluated and compared. A unique coupler crossbar switch matrix architecture with dual-gate field effect transistor as switching element was developed. Experimental results of both microwave switch matrix (MSM) and distribution control unit (DCU) are presented. These test results verify the MSM with coupler crossbar architecture and dual-gate FET as switching element will meet the future SS-TDMA system requirements. Finally, the reliability of the dynamic switch matrix is addressed. The analysis shows reliability of 0.9981 for 7 year space operation can be achieved for the designed dynamic switch matrix.

Ho, P. T.↗
NASA NTRS1984

Energy-Saving Inverter

Commutation by field-effect transistor allows more efficient operation. High voltage field-effect transistor (FET) controls silicon controlled rectifiers (SCR's). Circuit requires only one capacitor and one inductor in commutation circuit: simpler, more efficient, and more economical than conventional inverters. Adaptable to dc-to-dc converters.

Rippel, W. E.↗
NASA NTRS1983

Ambient and cryogenic temperature testing of a 32-channel CMOS multiplexer

A 32 channel CMOS multiplexer was tested at room temperature and at liquid helium temperature (4.9 K). Voltage gain of the FET input stage, leakage current, electrical crosstalk, and noise as a function of clock frequency were measured. The voltage gain measured at 4.9 K was slightly higher than that measured at 300 K and was independent of clock frequency at both operating temperatures. The off channel leakage current was 0.23 pA/channel at 4.9 K. Electrical crosstalk between adjacent channels (one on, one off) was quite low. The spot noise at 10 Hz, of the CMOS multiplexer operating in the static mode did not vary significantly with operating temperature. In the dynamic mode (3.2 kHz clock) at room temperature, the spot noise at 10 Hz was substantially higher than that measured in the static mode.

Lee, J. H.↗
NASA NTRS1982

Spacecraft in switch matrix for wide band service applicatons in 30/20 GHz communications satellite systems

Bandwidth, switching speed, off-state isolation, and reliability over a ten-year mission were factors in determining the optimum available technology for satellite communications switching in 1982. A proof of concept model for a 20 x 20 coupled crossbar switch matrix designed with FET devices for microwave switching and with high speed CMOS LIS for switch crosspoint addressing was fabricated and tested. Results show the design is feasible for application in a multichannel SS-TDMA communications system. Expandibility can readily be achieved with this design. A conceptual design study for a 100 x 100 switch matrix utilizing a coupled crossbar architecture implemented with a monolithic microwave integrated circuits revealed technology needs for high capacity switch matrices.

Cory, B. J.↗
NASA NTRS1982

Development of a microwave 20 x 20 switch matrix for 30/20 GHz SS-TDMA application

The design and fabrication of a 3-8 GHz, 20 x 20 Satellite Switched-Time Division Multiple Access IF switch matrix applicable to a 30/20 GHz communications satellite are described. An assessment of switch architecture in 1980 concluded that the GaAs FET-based coupled crossbar switch matrix, incorporating high speed CMOS LSI logic for switch crosspoint addressing, would be the optimum technology available for communications satellite switching by 1982. This assessment was based on such factors as switching speed, bandwidth, off-state isolation, and reliability, over a 10-year mission life. A proof-of-concept model's construction and testing are presented.

Cory, B. J.↗
NASA NTRS1982

A 1 watt GaAs power amplifier for the NASA 30/20 GHz communication system

A multistage GaAs FET power amplifier, employing cascaded balanced stages using state-of-the-art 1/4, 1/2, and 1 watt devices, has been developed. A linear gain of 30 dB with 1.25 watts output has been achieved over a 17.7 to 19.4 GHz frequency band. The development and performance of the amplifier and its components are discussed.

Goel, J.↗