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At least 289 records · Page 16

Towards bio-silicon interfaces: Formation of an ultra-thin self-hydrated artificial membrane composed of dipalmitoylphosphatidylcholine (DPPC) and chitosan deposited in high vacuum from the gas-phase

The recent combination of nanoscale developments with biological molecules for biotechnological research has opened a wide field related to the area of biosensors. In the last years, device manufacturing for medical applications adapted the so-called bottom-up approach, from nanostructures to larger devices. Preparation and characterization of artificial biological membranes is a necessary step for the formation of nano-devices or sensors. In this paper, we describe the formation and characterization of a phospholipid bilayer (dipalmitoylphosphatidylcholine, DPPC) on a mattress of a polysaccharide (Chitosan) that keeps the membrane hydrated. The deposition of Chitosan (∼25 Å) and DPPC (∼60 Å) was performed from the gas phase in high vacuum onto a substrate of Si(100) covered with its native oxide layer. The layer thickness was controlled in situ using Very High Resolution Ellipsometry (VHRE). Raman spectroscopy studies show that neither Chitosan nor DPPC molecules decompose during evaporation. With VHRE and Atomic Force Microscopy we have been able to detect phase transitions in the membrane. The presence of the Chitosan interlayer as a water reservoir is essential for both DPPC bilayer formation and stability, favoring the appearance of phase transitions. Our experiments show that the proposed sample preparation from the gas phase is reproducible and provides a natural environment for the DPPC bilayer. In future work, different Chitosan thicknesses should be studied to achieve a complete and homogeneous interlayer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Boron-doped superlattices and Bragg mirrors in diamond

A periodic modulation of the boron doping level of single crystal diamond multilayers over more than three orders of magnitude during epitaxial growth by microwave plasma-enhanced chemical vapor deposition is shown to yield Bragg mirrors in the visible. The thicknesses and doping level of the individual layers were controlled by in situ spectroscopic ellipsometry, enabling to tune the reflectance peak to the wavelength range of diamond color centers, such as NV{sup 0} or NV{sup −}. The crystalline quality, periodicity, and sharpness of the doping transitions in these doping superlattices over tens of periods were confirmed by high resolution X-ray diffraction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Al{sub 2}O{sub 3}/GeO{sub x} gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method

Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stack fabricated by an in situ cycling ozone oxidation (COO) method in the atomic layer deposition (ALD) system at low temperature is systematically investigated. Excellent electrical characteristics such as minimum interface trap density as low as 1.9 × 10{sup 11 }cm{sup −2 }eV{sup −1} have been obtained by COO treatment. The impact of COO treatment against the band alignment of Al{sub 2}O{sub 3} with respect to Ge is studied by x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE). Based on both XPS and SE studies, the origin of gate leakage in the ALD-Al{sub 2}O{sub 3} is attributed to the sub-gap states, which may be correlated to the OH-related groups in Al{sub 2}O{sub 3} network. It is demonstrated that the COO method is effective in repairing the OH-related defects in high-k dielectrics as well as forming superior high-k/Ge interface for high performance Ge MOS devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Temperature dependence of the dielectric function in the spectral range (0.5–8.5) eV of an In{sub 2}O{sub 3} thin film

We present the dielectric function of a bcc-In{sub 2}O{sub 3} thin film in the wide spectral range from near-infrared to vacuum-ultraviolet and for temperatures 10 K–300 K, determined by spectroscopic ellipsometry. From the temperature dependence of electronic transition energies, we derive electron-phonon coupling properties and found hints that the direct parabolic band-band transitions involve In-d states. Further we discuss possible excitonic contributions to the dielectric function.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Phase diagram and incommensurate antiferroelectric structure in (Pb{sub 1−1.5x}La{sub x})(Zr{sub 0.42}Sn{sub 0.40}Ti{sub 0.18})O{sub 3} ceramics discovered by band-to-band optical transitions

Optical properties and phase transitions of (Pb{sub 1−1.5x}La{sub x})(Zr{sub 0.42}Sn{sub 0.40}Ti{sub 0.18})O{sub 3} (PLZST 100x/42/40/18) ceramics with different compositions have been investigated by temperature dependent spectroscopic ellipsometry. Two interband critical points (E{sub cp1} and E{sub cp2}) located at about 3.9 and 5.1 eV can be obtained by fitting standard line shapes to the second derivatives of the complex dielectric functions. Based on the band-to-band transitions, the phase diagram of PLZST ceramics can be well presented. Moreover, a peculiar incommensurate antiferroelectric state has been found to exist above the temperature of the normal commensurate antiferroelectric tetragonal structure. It can be stable below Curie temperature, evolving slowly with decreasing temperature towards the commensurate structure, which is due to strong pinning of incommensurate domain walls. The phenomena can result from a competition between ferroelectric ordering and antiferroelectric ordering caused by the lanthanum modification.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Tungsten polyoxometalate molecules as active nodes for dynamic carrier exchange in hybrid molecular/semiconductor capacitors

In this work we study the utilization of molecular transition metal oxides known as polyoxometalates (POMs), in particular the Keggin structure anions of the formula PW₁₂O₄₀³⁻, as active nodes for potential switching and/or fast writing memory applications. The active molecules are being integrated in hybrid Metal-Insulator/POM molecules-Semiconductor capacitors, which serve as prototypes allowing investigation of critical performance characteristics towards the design of more sophisticated devices. The charging ability as well as the electronic structure of the molecular layer is probed by means of electrical characterization, namely, capacitance-voltage and current-voltage measurements, as well as transient capacitance measurements, C (t), under step voltage polarization. It is argued that the transient current peaks observed are manifestations of dynamic carrier exchange between the gate electrode and specific molecular levels, while the transient C (t) curves under conditions of molecular charging can supply information for the rate of change of the charge that is being trapped and de-trapped within the molecular layer. Structural characterization via surface and cross sectional scanning electron microscopy as well as atomic force microscopy, spectroscopic ellipsometry, UV and Fourier-transform IR spectroscopies, UPS, and XPS contribute to the extraction of accurate electronic structure characteristics and open the path for the design of new devices with on-demand tuning of their interfacial properties via the controlled preparation of the POM layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Bandgap tailoring of in-situ nitrogen-doped TiO₂ sputtered films intended for electrophotocatalytic applications under solar light

We report on a reactive RF-sputtering process permitting the in-situ nitrogen doping of TiO₂ films in order to shift their photoactivity from UV to visible range. By carefully controlling the relative nitrogen-to-argon mass flow rate ratio (within the 0%–25% range) in the sputter deposition chamber, TiO₂:N films were grown with nitrogen contents ranging from 0 to 6.2 at. %, as determined by high-resolution X-ray spectroscopy measurements. A systematic investigation of the crystalline structure of the TiO₂:N films, as a function of their N content, revealed that low N contents (0.2–0.3 at. %) induce crystallization in the rutile phase while higher N contents (≥1.4 at. %) were accompanied with the recovery of the anatase structure with an average crystallite size of ~35 nm. By using both UV-Vis absorption and spectroscopic ellipsometry measurements, we were able to quantitatively determine the bandgap (E{sub g}) variation of the TiO₂:N films as a function of their N content. Thus, we have demonstrated that the E{sub g} of the TiO₂:N films effectively narrows from 3.2 eV down to a value as low as ~2.3 eV for the optimal N doping concentration of 3.4 at. % (higher N incorporation does not translate into further red shifting of the TiO₂:N films' E{sub g}). The photoactivity of the TiO₂:N films under visible light was confirmed through electro-photocatalytic decomposition of chlortetracycline (CTC, an emerging water pollutant) under standard 1.5AM solar radiation. Thus, CTC degradation efficiencies of up to 98% were achieved with 2 hours process cycles under simulated solar light. Moreover, the electro-photocatalytic performance of the TiO₂:N films is shown to be directly correlated to their optoelectronic properties (namely their bandgap narrowing).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Thickness controlled sol-gel silica films for plasmonic bio-sensing devices

Plasmonics has recently received considerable interest due to its potentiality in many fields as well as in nanobio-technology applications. In this regard, various strategies are required for modifying the surfaces of plasmonic nanostructures and to control their optical properties in view of interesting application such as bio-sensing, We report a simple method for depositing silica layers of controlled thickness on planar plasmonic structures. Tetraethoxysilane (TEOS) was used as silica precursor. The control of the silica layer thickness was obtained by optimizing the sol-gel method and dip-coating technique, in particular by properly tuning different parameters such as pH, solvent concentration, and withdrawal speed. The resulting films were characterized via atomic force microscopy (AFM), Fourier-transform (FT) spectroscopy, and spectroscopic ellipsometry (SE). Furthermore, by performing the analysis of surface plasmon resonances before and after the coating of the nanostructures, it was observed that the position of the resonance structures could be properly shifted by finely controlling the silica layer thickness. The effect of silica coating was assessed also in view of sensing applications, due to important advantages, such as surface protection of the plasmonic structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Transition Helmholtz free energy, entropy, and heat capacity of free-standing smectic films in water: A mean-field treatment

Using the extended McMillan's mean field approach with anisotropic forces a study of both the structural and thermodynamic properties of free-standing smectic film (FSSF) in water on heating to the isotropic temperature is carried out numerically. By solving the self-consistent nonlinear equations for the order parameters, we obtained that the smectic-A-isotropic (AI) transition occurs through the series of layer-thinning transitions causing the films to thin in the stepwise manner as the temperature is increased above the bulk smectic-A-isotropic temperature T{sub AI}(bulk). With enhanced pair interactions in the bounding layers, the smectic-isotropic transition corresponds to smectic melting of the central layers. The effects of surface “enhanced” pair interactions in the bounding layers and of film thickness on the orientational and translational order parameters, the Helmholtz free energy and entropy, as well as the temperature dependence of the heat capacity of FSSFs, have also been investigated. Reasonable agreement between the theoretically predicted and the experimentally obtained – by means of optical microscopy and ellipsometry techniques – data of the temperature when the thin decylcyanobiphenyl smectic film immersing in water ruptures has been obtained.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Mueller matrix ellipsometric detection of profile asymmetry in nanoimprinted grating structures

Mueller matrix ellipsometry (MME) is applied to detect foot-like asymmetry encountered in nanoimprint lithography (NIL) processes. We present both theoretical and experimental results which show that MME has good sensitivity to both the magnitude and direction of asymmetric profiles. The physics behind the use of MME for asymmetry detection is the breaking of electromagnetic reciprocity theorem for the zeroth-order diffraction of asymmetric gratings. We demonstrate that accurate characterization of asymmetric nanoimprinted gratings can be achieved by performing MME measurements in a conical mounting with the plane of incidence parallel to grating lines and meanwhile incorporating depolarization effects into the optical model. The comparison of MME-extracted asymmetric profile with the measurement by cross-sectional scanning electron microscopy also reveals the strong potential of this technique for in-line monitoring NIL processes, where symmetric structures are desired.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electronic excitations and structure of Li{sub 2}IrO{sub 3} thin films grown on ZrO{sub 2}:Y (001) substrates

Thin films are a prerequisite for application of the emergent exotic ground states in iridates that result from the interplay of strong spin-orbit coupling and electronic correlations. We report on pulsed laser deposition of Li{sub 2}IrO{sub 3} films on ZrO{sub 2}:Y (001) single crystalline substrates. X-ray diffraction confirms preferential (001) and (10-1) out-of-plane crystalline orientations with well defined in-plane orientation. Resistivity between 35 and 300 K is dominated by a three-dimensional variable range hopping mechanism. The dielectric function is determined by means of spectroscopic ellipsometry and, complemented by Fourier transform infrared transmission spectroscopy, reveals a small optical gap of ≈300 meV, a splitting of the 5d-t{sub 2g} manifold, and several in-gap excitations attributed to phonons and possibly magnons.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optical spectroscopy of sputtered nanometer-thick yttrium iron garnet films

Nanometer (nm)-thick yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) films present interest for spintronics. This work employs spectral ellipsometry and magneto-optic Kerr effect (MOKE) spectra to characterize nm-thick YIG films grown on single-crystal Gd{sub 3}Ga{sub 5}O{sub 12} substrates by magnetron sputtering. The thickness (t) of the films ranges between 10 nm and 40 nm. Independent on t, the polar MOKE hysteresis loops saturate in the field of about 1.8 kOe, consistent with the saturation magnetization in bulk YIG (4πM{sub s} ≈ 1.75 kG). The MOKE spectrum measured at photon energies between 1.3 eV and 4.5 eV on the 38-nm-thick film agrees with that measured on single-crystal YIG bulk materials. The MOKE spectrum of the 12-nm-thick film still preserves the structure of the bulk YIG but its amplitude at lower photon energies is modified due to the fact that the radiation penetration depth exceeds 20 nm. The t dependence of the MOKE amplitude is consistent with MOKE calculations. The results indicate that the films are stoichiometric, strain free, without Fe{sup 2+}, and preserve bulk YIG properties down to t ≈ 10 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Horizontal molecular orientation in solution-processed organic light-emitting diodes

Horizontal orientation of the emission transition dipole moments achieved in glassy vapor-deposited organic thin films leads to an enhancement of the light out-coupling efficiency in organic light-emitting diodes (OLEDs). Here, our combined study of variable angle spectroscopic ellipsometry and angle dependent photoluminescence demonstrates that such a horizontal orientation can be achieved in glassy spin-coated organic films based on a composite blend of a heptafluorene derivative as a dopant and a 4,4′-bis(N-carbazolyl)-1,1′-biphenyl as a host. Solution-processed fluorescent OLEDs with horizontally oriented heptafluorene emitters were then fabricated and emitted deep blue electroluminescence with an external quantum efficiency as high as 5.3%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)

Understanding and controlling growth of graphene on the carbon face (C-face) of SiC presents a significant challenge. In this work, we study the structural, vibrational, and dielectric function properties of graphene grown on the C-face of 4H-SiC by high-temperature sublimation in an argon atmosphere. The effect of growth temperature on the graphene number of layers and crystallite size is investigated and discussed in relation to graphene coverage and thickness homogeneity. An amorphous carbon layer at the interface between SiC and the graphene is identified, and its evolution with growth temperature is established. Atomic force microscopy, micro-Raman scattering spectroscopy, spectroscopic ellipsometry, and high-resolution cross-sectional transmission electron microscopy are combined to determine and correlate thickness, stacking order, dielectric function, and interface properties of graphene. The role of surface defects and growth temperature on the graphene growth mechanism and stacking is discussed, and a conclusion about the critical factors to achieve decoupled graphene layers is drawn.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Synthesis, characterization and properties of yellow-light-emitting polyethers containing bis(styryl)anthracene units

Aromatic aliphatic polyethers containing bis(styryl)anthracene units in the main chain separated by flexible spacer of 11 (AND52) or 12 (AND53) methylene units, were synthesized and characterized aiming to be applied as emitting materials in polymer light emitting diode (PLED) devices. The polymers are soluble in common organic solvents and have average molecular weight of about 15kDa. Differentiations owing to an odd-even number of methylene units (χ=11 vs χ=12) are observed in their optical properties in solid state. Thin films as well as PLED devices were fabricated via conventional spin-coating process. Initially, various parameters have been investigated concerning the solubility of the polymers, the effect of film thickness on the electrical properties, and their thermal stability. The optical properties of the two polymers were investigated by NIR-Vis-far UV spectroscopic ellipsometry (SE). The accurate determination of the thickness and the optical constants (refractive index and dielectric function as a function of wavelength) were derived. These provide substantial insights into the final design of the optimum final multi-layer structure of the PLEDs, if we take into account that the external quantum efficiency (EQE) of electroluminescence (EL) strongly depends on the optical interference of the beams of emitted light that have been multiply reflected from the layer interfaces. The morphological characterization of the AND52 and AND53 polymeric thin films was carried out using atomic force microscopy (AFM), while current density-voltage (J-V) characteristics of the devices were studied by electrical measurements. The single PLED devices were switched on at relatively low operation voltages, showing the potential as backplanes for active matrix PLED applications. In this perspective, it can be assumed that further studies of the presented materials will enable the development of flexible PLEDs with the possibility to scale up their dimensions for bigger active area devices.

36 MATERIALS SCIENCE↗

In-situ ellipsometric characterization of the growth of porous anisotropic nanocrystalline ZnO layers

ZnO films have increasingly been in the spotlight due to their largely varied electro-physical and optical properties. For several applications, porous anisotropic nanocrystalline layers are especially interesting. To study the growth kinetics of such films during different fabrication processes, a powerful non-destructive in-situ technique is required. In this work, both ex-situ and in-situ spectroscopic ellipsometry are used along with advanced modelling techniques that are able to take both the anisotropy and the porosity of the films into account. Scanning electron microscopy, along with nitrogen absorption methods for measuring porosity, validated the ellipsometric data and proposed model. The film, grown by chemical bath deposition, was monitored from around 700 to 1800 nm in thickness. This same principle can now be used to monitor any other porous and/or anisotropic structure in an effective in-situ manner, e.g., growth of porous anodic aluminium oxides, nano-porous silica films, etc.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Thermal stability of vapor-deposited stable glasses of an organic semiconductor

Vapor-deposited organic glasses can show enhanced kinetic stability relative to liquid-cooled glasses. When such stable glasses of model glassformers are annealed above the glass transition temperature T{sub g}, they lose their thermal stability and transform into the supercooled liquid via constant velocity propagating fronts. In this work, we show that vapor-deposited glasses of an organic semiconductor, N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD), also transform via propagating fronts. Using spectroscopic ellipsometry and a new high-throughput annealing protocol, we measure transformation front velocities for TPD glasses prepared with substrate temperatures (T{sub Substrate}) from 0.63 to 0.96 T{sub g}, at many different annealing temperatures. We observe that the front velocity varies by over an order of magnitude with T{sub Substrate}, while the activation energy remains constant. Using dielectric spectroscopy, we measure the structural relaxation time of supercooled TPD. We find that the mobility of the liquid and the structure of the glass are independent factors in controlling the thermal stability of TPD films. In comparison to model glassformers, the transformation fronts of TPD have similar velocities and a similar dependence on T{sub Substrate}, suggesting universal behavior. These results may aid in designing active layers in organic electronic devices with improved thermal stability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗