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At least 289 records · Page 16

Applying Two-Dimensional Correlation Spectroscopy and Principal Component Analysis to Understand How Temperature Affects the Neptunium(V) Absorption Spectrum

The visible-near infrared (Vis-NIR) electronic absorption spectrum of neptunium(V) (NpO 2 + ) comprises numerous f-f electronic transitions with mostly undocumented temperature dependencies. The effect of temperature on the absorption spectrum of the pentavalent neptunyl dioxocation (NpO 2 + ) is an important factor to consider with spectrophotometric applications but has often been overlooked. Optical Vis-NIR absorption spectra (400–1700 nm) of Np(V) (0.017–0.89 M) in 1 M nitric acid were evaluated with varying temperatures (T = 10–80 °C). The intensity, position, and overall shape of the bands were sensitive to interactions with the solvent and coordination environment. Numerous temperature-induced isosbestic points were identified resulting from dynamic, overlapping peak shifts. Spectral variations were characterized using principal component analysis (PCA) and 2D correlation spectroscopy (COS). 2D-COS revealed that the absorption band near 1095 nm likely consists of two bands centered near 1087 and 1096 nm, which cannot be explained by current computational methods. 2D-COS analysis also provided an unambiguous assignment of unresolved peaks in the visible region for comparison with computational predictions. PCA was used to identify nonlinearity in the spectral response at elevated Np(V) concentrations ≥ 0.5 M. This unique experimental data and interpretation will foster a deeper understanding of the absorption spectra for complex actinyl ions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Intrinsic Defect-Induced Local Semiconducting-to-Metallic Regions Within Monolayer 1T-TiS2 Displayed by First-Principles Calculations and Scanning Tunneling Microscopy

Using density functional theory (DFT) and scanning tunneling microscopy (STM), the intrinsic point defects, formation energy, and electronic structure of 1T-TiS2 were investigated. Defect systems include single-atom vacancies, interstitial and adatom additions, and direct atomic substitution. Using a collective approach for analyzing realistic systems for point defect investigation, we provide a more straightforward comparison to the experimental measurements, reproducing more realistic environmental conditions related to thin film growth. STM images are compared to computationally simulated electron density images to identify specific geometries that result from favorable point defects. DFT suggests that titanium interstitials are the most energetically favorable intrinsic defect, and sulfur vacancies are more likely to form than titanium vacancies within this realistic analysis, which is in agreement with STM data. A pristine, stoichiometric monolayer system is calculated to have a direct band gap of 0.422 eV, which varies based on local point defects. Local semiconducting-to-metallic electronic transitions are predicted to occur based on the presence of Ti interstitials.

Keeney, P. J.↗

Iodine infrared laser.

Iodine IR laser, discussing CW emission obtained at various wavelengths and attributed to electronic transitions in atom

Deutsch, T. F.↗

Chemical physics of molecules and continuous channel electron multipliers

The A approaches X, B approaches X and B approaches A bands of CO(+) have been excited using monochromatic photons and the band intensities measured. Using such data the variations of the electronic transition moments for these above emission bands as well as for the absorption bands have been determined. Further, the specific cross sections for the absorption processes have been determined by measuring the total emission intensity in the band system through which the upper state decays. The band intensity measurements and the derived results are presented.

Judge, D. L.↗

Auger electrons

Results are briefly described of efforts undertaken to assign proper electron transitions to the Auger lines of copper. Based on these investigations, using X-ray excitation and higher resolution, all three prominent Auger peaks of copper were determined to be L3MM type rather than L2MM type.

Yin, L. I.↗

A study of irradiation-induced defects in silicon using low temperature photoluminescence

Irradiation-induced defects in silicon, using low temperature photoluminescence as a probe of defect properties were investigated. The goal of this research was to gain new understanding of defects which degrade solar cell characteristics in a radiation environment. In this regard, an important aspect of this program was a study of radiation damage and annealing in lithium doped silicon, which is useful in reducing solar cell degradation. Luminescence was used to study defects because this property reveals electron transitions through a number of defect energy levels at any given annealing stage; the luminescence spectra give excellent resolution of many defect energy levels, and these measurements can be used to give defect symmetry in the lattice, impurity dependence, and annealing properties.

Streetman, B. G.↗

Electrostatic velocity-space instabilities stimulated near the harmonics of the electron cyclotron frequency in the ionosphere

Data are presented on observations made in the ionospheric plasma that provide evidence for the stimulation of Harris type instabilities at nf sub H in a single electron transition. An illustration is also given of the change in shape of the dispersion curve for a given nf sub H as the upper hybrid frequency crosses the nf sub H value. It was concluded that the instability can exist near nf sub H only when the hybrid frequency nf sub H.

Benson, R. F.↗

Optical measurement of static temperature and hydroxyl radical profiles in a hydrogen-fueled supersonic combustor

Profiles of static temperature and hydroxyl radical concentration were measured in a two-dimensional supersonic combustor test section 22.8 cm downstream of hydrogen injection. A high-pressure gas generator supplied vitiated air to the test section at Mach 2.44, atmospheric pressure, and a total temperature of about 2240 K. Room-temperature hydrogen was injected through a 0.40-cm step slot at Mach 1 and matched pressure. The measurements utilized a noninterfering spectral line absorption technique in which narrow ultraviolet emission lines of the hydroxyl electronic transition are absorbed by the broader absorption lines in the combustion gas. Comparison of the measured temperature profiles with theoretical calculations showed good agreement.

Gaugler, R. E.↗