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At least 289 records · Page 16

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DOE OSTI2024

High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

2D and layered semiconductors are considered as promising electronic materials, particularly for applications that require high carrier mobility and efficient field-effect switching combined with mechanical flexibility. To date, however, the highest mobility has been realized primarily at low carrier concentration. Here, it is shown that few-layer/multilayer SnSe 2 gated by a solution top gate combines very high room-temperature electron mobility (up to 800 cm 2 V −1 s −1 ), along with large on-off current ratios (>10 5 ) and a subthreshold swing below the thermodynamic limit (50 mV per decade) in field-effect devices, at exceptionally large sheet carrier concentrations of ≈10 13 cm −2 . Observed mobility enhancements upon partial depletion of the channel point to near-surface defects or impurities as the mobility-limiting scattering centers. Under illumination, the resulting gap states give rise to gate-controlled switching between positive and negative photoconductance. The results qualify SnSe 2 as a promising layered semiconductor for flexible and wearable electronics, as well as for the realization of advanced approaches to photodetection.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Redox active polymer devices and methods of using and manufacturing the same

The disclosed technology relates generally to apparatus comprising conductive polymers and more particularly to tag and tag devices comprising a redox-active polymer film, and method of using and manufacturing the same. In one aspect, an apparatus includes a substrate and a conductive structure formed on the substrate which includes a layer of redox-active polymer film having mobile ions and electrons. The conductive structure further includes a first terminal and a second terminal configured to receive an electrical signal therebetween, where the layer of redox-active polymer is configured to conduct an electrical current generated by the mobile ions and the electrons in response to the electrical signal. The apparatus additionally includes a detection circuit operatively coupled to the conductive structure and configured to detect the electrical current flowing through the conductive structure.

Johnson, Paul B.↗

DOE OSTI2021

Redox active polymer devices and methods of using and manufacturing the same

The disclosed technology relates generally to apparatuses comprising conductive polymers and more particularly to tags and tag devices comprising a redox-active polymer film, and methods of using and manufacturing the same. In one aspect, an apparatus includes a substrate and a conductive structure formed on the substrate which includes a layer of redox-active polymer film having mobile ions and electrons. The conductive structure further includes a first terminal and a second terminal configured to receive an electrical signal therebetween, where the layer of redox-active polymer is configured to conduct an electrical current generated by the mobile ions and the electrons in response to the electrical signal. The apparatus additionally includes a detection circuit operatively coupled to the conductive structure and configured to detect the electrical current flowing through the conductive structure.

Friesen, Cody A.↗

DOE OSTI2022

Redox active polymer devices and methods of using and manufacturing the same

Johnson, Paul B.↗

DOE OSTI2021

Bio-inspired strategies for next-generation perovskite solar mobile power sources

Smart electronic devices are becoming ubiquitous due to many appealing attributes including portability, long operational time, rechargeability and compatibility with the user-desired form factor. Integration of mobile power sources (MPS) based on photovoltaic technologies with smart electronics will continue to drive improved sustainability and independence. With high efficiency, low cost, flexibility and lightweight features, halide perovskite photovoltaics have become promising candidates for MPS. Realization of these photovoltaic MPS (PV-MPS) with unconventionally extraordinary attributes requires new ‘out-of-box’ designs. Natural materials have provided promising designing solutions to engineer properties under a broad range of boundary conditions, ranging from molecules, proteins, cells, tissues, apparatus to systems in animals, plants, and humans optimized through billions of years of evolution. Applying bio-inspired strategies in PV-MPS could be biomolecular modification on crystallization at the atomic/meso-scale, bio-structural duplication at the device/system level and bio-mimicking at the functional level to render efficient charge delivery, energy transport/utilization, as well as stronger resistance against environmental stimuli (e.g., self-healing and self-cleaning). In this paper, we discuss the bio-inspired/-mimetic structures, experimental models, and working principles, with the goal of revealing physics and bio-microstructures relevant for PV-MPS. Here the emphasis is on identifying the strategies and material designs towards improvement of the performance of emerging halide perovskite PVs and strategizing their bridge to future MPS.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Charge carrier mobility of halide perovskite single crystals for ionizing radiation detection

Halide perovskites have recently emerged as promising semiconductor materials for several applications including solar cells, light-emitting diodes (LEDs), and radiation detectors. The charge carrier transport properties, which could be evaluated by the mobility-lifetime (mu-tau or μ-г) product, serve an important role for the development of halide perovskites for radiation detection applications. In this perspective, we firstly explain the charge transport mechanism and the limiting factors that determine the intrinsic charge carrier mobility in halide perovskite single crystals. Then, we overview the techniques and methods that have been employed for evaluating the charge carrier mobility (for both electrons and holes). Lastly, we discuss the discrepancy between the experimentally determined carrier mobility from the literature for halide perovskite single crystals and a perspective on future developments for carrier mobility enhancement is provided.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

Quantitative relationships between film morphology, charge carrier dynamics, and photovoltaic performance in bulk-heterojunction binary vs. ternary acceptor blends

Addressing pertinent and perplexing questions regarding why nonfullerene acceptors (NFAs) promote higher power conversion efficiencies (PCEs) than traditional fullerenes and how photoactive bulk heterojunction (BHJ) film morphology, charge photogeneration, and recombination dynamics dictate solar cell performance have stimulated many studies of polymer solar cells (PSCs), yet quantitative relationships remain limited. Better understanding in these areas offers the potential to advance materials design and device engineering, afford higher PCEs, and ultimate commercialization. Here we probe quantitative relationships between BHJ film morphology, charge carrier dynamics, and photovoltaic performance in model binary and ternary blend systems having a wide bandgap donor polymer, a fullerene, and a promising NFA. We show that optimal PC 71 BM incorporation in a PBDB-TF:ITIC-Th binary system matrix retains the original π-face-on orientation, ITIC-Th crystallinity and BHJ film crystallite dimensions, and reduces film upper surface ITIC-Th segregation. Such morphology changes together simultaneously increase hole (μ h ) and electron (μ e ) mobilities, facilitate light-activated ITIC-Th to PC 71 BM domain electron delocalization, reduce free charge carrier (FC) bimolecular recombination (BR) within PBDB-TF:ITIC-Th mixed regions, and increase FC extraction pathways viaPBDB-TF:PC 71 BM pairs. The interplay of these effects yields significantly enhanced inverted cell short-circuit current density (J SC ), fill factor (FF), and PCE. Unexpectedly, we also find that excessive PC 71 BM in the PBDB-TF:ITIC-Th binary system alters the PBDB-TF orientation to π-edge-on, increases large scale PC 71 BM-rich aggregations and BHJ upper surface PC 71 BM composition. Further, these morphology changes increase parasitic decay processes such as intersystem crossing from photoexcited PC 71 BM, compromising the J SC , FF, and PCE metrics. ITIC-Th X-ray diffraction reveals a unique sidechain-dominated molecular network with previously unknown sidechain-end group stacking, rationalizing the STEM and GIWAXS results, photophysics, and the high μ e . DFT computation reveals charge transfer networks within ITIC-Th crystallites, supporting excited-state electron delocalization from ITIC-Th to PC 71 BM. This structure–property understanding leads to a newly reported NFA blend with PCE near 17%.

14 SOLAR ENERGY↗

DOE OSTI2024

Improving CdMnTe Detector Performance by Adding 2% of Selenium

About 2% of selenium was added to CdMnTe (CMT) to reveal the role of selenium in CMT material used as a gamma-ray detector. The average etch-pit density (EPD) in a typical 2-in CdMnTeSe (CMTS) wafer was measured to be about 8.3×10 3 cm –2 except for the edge regions, and the radial nonuniformity of the bandgap along the wafer was about 2-meV. The typical mobility-lifetime product of electrons and holes was evaluated to be 3.06×10 –3 cm 2 /V and 3.1×10 –4 cm 2 /V, respectively. The energy resolution of the 122-keV photo-peak for a Co-57 radioactive source with a planar CMTS detector was 5.2%, demonstrating a positive effect associated with adding dilute amounts of Se to CMT. Finally, the enhanced detector performance in a planar CMTS detector is attributed to an improved value of hole mobility-lifetime product in CMTS, which mitigates the adverse hole tailing effect found in CdZnTe (CZT) and CMT detectors.

47 OTHER INSTRUMENTATION↗

DOE OSTI2020

The energy footprint of automotive electronic sensors

We discuss how Information and communication technologies (ICT) have emerged as one of the leading technologies to reduce global emissions, particularly in the mobility sector. Automotive electronics, such as sensors/actuators and microcontrollers (commonly known as electronic control units (ECU) which control one or more of the electrical systems or subsystems in a vehicle), play a key role in ICT. Sensors/actuators are key in electronic ICT devices, starting with the data collection and data communication with the internet. The latest two big trends of electrification and automation in vehicles, are projected to increase the use of worldwide automotive sensors from 7.5 billion units in 2017 to 11.0 billion units by the year 2024. A representative state-of-the art automotive sensor system, (i.e., an ultrasonic backup system), including the ECUs controlling the vehicle electrical systems/subsystems, has been considered to estimate the energy footprint in terms of manufacturing and operational energy of global automotive sensors use. A widely used life cycle energy assessment method (i.e., cumulative energy demand) was used as both direct and indirect (including the extraction, manufacturing, and disposal of the raw and auxiliary materials) energy use can be considered for the energy footprint estimation. The embodied manufacturing energy impacts of the system was estimated to be 559 MJ/system, compared to the 417 MJ/system for lifetime system power and additional gasoline use. The share of purchased energy to the embodied energy where the upstream energy isn't included in the former case, is less than 10% and ~ 85% for the component manufacturing and vehicle operation energy uses, respectively. As the purpose of this ultrasonic backup system is to prevent rear crashes, an estimated 1.0 MJ/system is avoided from reduced lifetime vehicular repairs (from an estimated 11% chance of requiring a rear bumper replacement). While all of this is small compared to the overall automotive manufacturing and use energy, the 11 billion automotive sensors expected to be produced in 2024 could require 1540 PJ for manufacturing and those sensors would require an additional 780–1150 PJ for lifetime energy use.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2024

The Influence of Alkyl Spacers and Molecular Weight on the Charge Transport and Storage Properties of Oxy‐Bithiophene‐Based Conjugated Polymers

Abstract Conjugated polymers (CPs) with polar side chains can conduct electronic and ionic charges simultaneously, making them promising for bioelectronics, electrocatalysis and energy storage. Recent work showed that adding alkyl spacers between CP backbones and polar side chains improved electronic charge carrier mobility, reduced swelling and enhanced stability, without compromising ion transport. However, how alkyl spacers impact polymer backbone conformation and, subsequently, electronic properties remain unclear. In this work, we design two oxy‐bithiophene‐based CP series, each featuring progressively extended alkyl spacer lengths and two distinct molecular weight (MW) distributions. Using operando characterisations, we evaluate the (spectro)electrochemical and swelling properties of the polymer thin films, and their performance in organic field‐effect transistors and organic electrochemical transistors. Surprisingly, alkyl spacers negatively impact the hole mobility of our polymers, with higher MW amplifying this effect. Using molecular dynamics simulations, we show that it is thermodynamically favourable for adjacent non‐polar alkyl spacers to aggregate in polar electrolytes, leading to backbone twisting. Further spectroscopic measurements corroborate this prediction. Our findings demonstrate the active interactions between side chain structure, MW and electrolyte/solvent polarity in influencing polymer performance, underscoring the importance of considering solvation environment effects on polymer conformation when designing new mixed conducting CPs for electrochemical applications.

Yu, Hang [Department of Physics and Centre for Pro↗

DOE OSTI2024

The Influence of Alkyl Spacers and Molecular Weight on the Charge Transport and Storage Properties of Oxy‐Bithiophene‐Based Conjugated Polymers

Conjugated polymers (CPs) with polar side chains can conduct electronic and ionic charges simultaneously, making them promising for bioelectronics, electrocatalysis and energy storage. Recent work showed that adding alkyl spacers between CP backbones and polar side chains improved electronic charge carrier mobility, reduced swelling and enhanced stability, without compromising ion transport. However, how alkyl spacers impact polymer backbone conformation and, subsequently, electronic properties remain unclear. In this work, we design two oxy-bithiophene-based CP series, each featuring progressively extended alkyl spacer lengths and two distinct molecular weight (MW) distributions. Using operando characterisations, we evaluate the (spectro)electrochemical and swelling properties of the polymer thin films, and their performance in organic field-effect transistors and organic electrochemical transistors. Surprisingly, alkyl spacers negatively impact the hole mobility of our polymers, with higher MW amplifying this effect. Using molecular dynamics simulations, we show that it is thermodynamically favourable for adjacent non-polar alkyl spacers to aggregate in polar electrolytes, leading to backbone twisting. Further spectroscopic measurements corroborate this prediction. Our findings demonstrate the active interactions between side chain structure, MW and electrolyte/solvent polarity in influencing polymer performance, underscoring the importance of considering solvation environment effects on polymer conformation when designing new mixed conducting CPs for electrochemical applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Tuning of the electronic and vibrational properties of epitaxial MoS 2 through He-ion beam modification

Abstract Atomically thin transition metal dichalcogenides (TMDs), like MoS 2 with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV) 4 He + ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS 2 at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of 4 He + ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS 2 lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS 2 and other 2D materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2021

Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer attractive properties, such as a very broad range of bandgaps, large conduction band offsets, high electron and hole mobilities, and quantum-material properties such as electric-field-induced topological insulator states. These properties and characteristics are highly desirable for many electronic and optoelectronic devices as well as potential condensed-matter quantum-physics applications. Here, we provide an overview of our recent studies of the MBE growth and characterization of zincblende II-VI/III-V heterostructures as well as several novel device applications based on different sets of these materials. By combining materials with small lattice mismatch, such as ZnTe/GaSb (Δa/a~0.13%), CdTe/InSb (Δa/a~0.05%), and ZnSe/GaAs (Δa/a~0.26%), epitaxial films of excellent crystallinity were grown once the growth conditions had been optimized. Cross-sectional observations using conventional and atomic-resolution electron microscopy revealed coherent interfaces and close to defect-free heterostructures. Measurements across CdTe/InSb interfaces indicated a limited amount (~1.5 nm) of chemical intermixing. Results for ZnTe/GaSb distributed Bragg reflectors, CdTe/Mg x Cd 1-x Te double heterostructures, and CdTe/InSb two-color photodetectors are briefly presented, and the growth of a rock salt/zincblende PbTe/CdTe/InSb heterostructure is also described.

Materials Science↗

DOE OSTI2020

Determination of effective attenuation length of slow electrons in polymer films

Slow electrons (with energy below 10 eV) play an important role in nature and technology. For instance, they are believed to initiate solubility change in extreme ultraviolet resists. Depending on their mobility, such secondary electrons can lead to image blur and degradation of patterning resolution. Hence, it is important to characterize the transport of slow electrons by measuring parameters such as the effective attenuation length (EAL). In this work, we present a technique that allows for prompt characterization of EAL in polymer films. In this experiment, slow electrons are generated in a substrate upon absorption of x-ray photons. The attenuation of electron flux by a polymer film is measured as a function of film thickness, allowing for the determination of EAL for slow electrons. We illustrate this method with poly(hydroxy styrene) and poly(methyl metacrylate) films. Furthermore, we propose an improvement for this technique that would enable the measurement of EAL as a function of electron kinetic energy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Field reversal in low pressure, unmagnetized radio frequency capacitively coupled argon plasma discharges

In general, the radio frequency (rf) electric field within a sheath points toward the metal electrode in low pressure, unmagnetized rf electropositive capacitively coupled plasma (CCP) glow discharges. This is due to the large ratio of electron to ion mobility and the formation of an ion sheath. In this work, we studied, using fully kinetic particle-in-cell simulations, a reversed electric field induced by the strong secondary electron emission during the phase of sheath collapse in a high-voltage rf-driven low pressure CCP glow discharge. We explored the transition behavior of the formation of field reversal as a function of driving voltage amplitude and found that field reversal starts to form at around 750 V, for a discharge with an electrode spacing of 4 cm at 10 mTorr argon pressure driven at 13.56 MHz. Accordingly, the energy distribution function of electrons incident on the electrode shows peaks from around 3 to 10 eV while varying the driving voltage from 150 to 2000 V, showing potentially beneficial effects in plasma material processing where relatively directional electrons are preferred to solely thermal diffusion electrons.

Physics↗

DOE OSTI2024

Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

The knowledge of minority and majority charge carrier properties enables controlling the performance of solar cells, transistors, detectors, sensors, and LEDs. Here, we developed the constant light induced magneto transport method which resolves electron and hole mobility, lifetime, diffusion coefficient and length, and quasi-Fermi level splitting. We demonstrate the implication of the constant light induced magneto transport for silicon and metal halide perovskite films. We resolve the transport properties of electrons and holes predicting the material’s effectiveness for solar cell application without making the full device. The accessibility of fourteen material parameters paves the way for in-depth exploration of causal mechanisms limiting the efficiency and functionality of material structures. To demonstrate broad applicability, we further characterized twelve materials with drift mobilities spanning from 10 –3 to 10 3 cm 2 V –1 s –1 and lifetimes varying between 10 –9 and 10 –3 seconds. The universality of our method its potential to advance optoelectronic devices in various technological fields.

14 SOLAR ENERGY↗

DOE OSTI2025

Role of effective mass and long-range interactions in the band-gap renormalization of photoexcited semiconductors

Understanding how to control changes in the electronic structure and related dynamical renormalizations by external driving fields is the key for understanding ultrafast spectroscopy and applications in electronics. Here, we focus on the band gap's modulation by external electric fields and uncover the effect of band dispersion on the gap renormalization. We employ the Green's function formalism using the real-time Dyson expansion to account for dynamical correlations induced by photodoping. The many-body formalism captures the dynamics of systems with long-range interactions, carrier mobility, and variable electron and hole effective mass. We also demonstrate that mean-field simulations based on the Hartree-Fock Hamiltonian, which lacks dynamical correlations, yields a qualitatively incorrect picture of band-gap renormalization. We find the trend that increasing effective mass, thus decreasing mobility, leads to as much as a 6% enhancement in band-gap renormalization. Further, the renormalization is strongly dependent on the degree of photodoping. As the screening induced by free electrons and holes effectively reduces any long-range and interband interactions for highly excited systems, we show that there is a specific turnover point with a minimal band gap. Here, we further demonstrate that the optical gap renormalization follows the same trend though its magnitude is altered by the Moss-Burstein effect.

Approximation methods for many-body systems↗

DOE OSTI2020

Anticorrelation of compressibility and resistivity in a microwave-irradiated two-dimensional electron system

Here, we report our direct study of the compressibility on an ultrahigh mobility two-dimensional electron system ( μ e ~ 1 × 10 7 cm 2 /V s) in GaAs/AlGaAs quantum wells under microwave irradiation. The field penetration current results show that the quantum capacitance oscillates with microwave-induced resistance oscillations, yet, the trend is opposite with respect to the compressibility of equilibrium states in previous theoretical explanations. The anomalous phenomena provide a platform for study on the nonequilibrium system under microwaves. Moreover, the quantum capacitance indication for a multiphoton process around j = 1 / 2 is detected under an intensive microwave below 30 GHz.

77 NANOSCIENCE AND NANOTECHNOLOGY↗