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At least 289 records · Page 16

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of approx.1 eV. For the last several years, research has been conducted by a number of organizations to develop approx.1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) approx.1- eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1- eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm2) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.↗

Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further complications due to the creation of defects and short life of the device or to introduce high content of indium, which again is found problematic due to the difficulties in diluting nitrogen in the presence of high indium [9]. An availability of material of proper band gap and lattice matching on InP are important issues for the development of TPV devices to perform better. To address those issues, recently we have shown that by adjusting the thickness of individual sublayers and the nitrogen composition, strain balanced GaAs(1-x)N(x)/InAs(1-y)N(y) superlattice can be designed to be both lattice matched to InP and have an effective bandgap in the desirable 0.4- 0.7eV range [10,11]. Theoretically the already reduced band gap of GaAs(1-x)N(x), due to the nitrogen effects, can be further reduced by subjecting it to a biaxial tensile strain, for example, by fabricating pseudomorphically strained layers on commonly available InP substrates. While such an approach in principle could allow access to smaller band gap (longer wavelength), only a few atomic monolayers of the material can be grown due to the large lattice mismatch between GaAs(1-x)N(x) and InP (approx.3.8-4.8 % for x<0.05, 300K). This limitation can be avoided using the principle of strain balancing [12], by introducing the alternating layers of InAs(1-y)N(y) with opposite strain (approx.2.4-3.1% for x<0.05, 300K) in combination with GaAs(1-x)N(x). Therefore, even an infinite pseudomorphically strained superlattice thickness can be realized from a sequence of GaAs(1-x)N(x) and InAs(1-y)N(y) layers if the thickness of each layer is kept below the threshold for its lattice relaxation

Bhusal, L.↗

The Effects of Synthetic and Enhanced Vision Technologies for Lunar Landings

Eight pilots participated as test subjects in a fixed-based simulation experiment to evaluate advanced vision display technologies such as Enhanced Vision (EV) and Synthetic Vision (SV) for providing terrain imagery on flight displays in a Lunar Lander Vehicle. Subjects were asked to fly 20 approaches to the Apollo 15 lunar landing site with four different display concepts - Baseline (symbology only with no terrain imagery), EV only (terrain imagery from Forward Looking Infra Red, or FLIR, and LIght Detection and Ranging, or LIDAR, sensors), SV only (terrain imagery from onboard database), and Fused EV and SV concepts. As expected, manual landing performance was excellent (within a meter of landing site center) and not affected by the inclusion of EV or SV terrain imagery on the Lunar Lander flight displays. Subjective ratings revealed significant situation awareness improvements with the concepts employing EV and/or SV terrain imagery compared to the Baseline condition that had no terrain imagery. In addition, display concepts employing EV imagery (compared to the SV and Baseline concepts which had none) were significantly better for pilot detection of intentional but unannounced navigation failures since this imagery provided an intuitive and obvious visual methodology to monitor the validity of the navigation solution.

Kramer, Lynda J.↗

Reflectivity Around the Gold M-Edges of X-ray Reflector of the Soft X-Ray Telescope Onboard ASTRO-H

The X-ray astronomy satellite ASTRO-H are equipped with two equivalent soft X-ray telescopes (SXT-I and SXT-S) which cover the energy band 0.3-12 keV. The X-ray reflectors of the SXTs are coated with a gold monolayer by means of the replication technique. A series of gold M absorption edges in the 2-4 keV band causes complex structures in the energy response of the SXTs. In the same band, there are astrophysically important emission lines from Si, Ar and S. Since the SXS has unprecedentedly high spectral resolution, we have measured the reflectivity around the gold M-edges in an extremely fine energy pitch at the synchrotron radiation facility KEK PF BL11-B, with the 2 eV pitch in 2100 eV to 4100 eV band that covers the entire series of the absorption edges (M-I through M-V) at grazing incident angles to the reflectors of 0.5, 0.8, 1.0, 1.2, 1.4 degree, and with a finer pitch of 0.25 eV in the 2200 eV to 2350 eV band where the two deepest M-IV and M-V edges are included. In the resultant reflectivity curves, we have clearly identified the fine structures associated with all the M-edges. Using these data, we calculated atomic scattering factor f1 as a function of X-ray energy, with which we have built the mirror response function which can be applied to the Suzaku spectra. As a result, we have found that discrepancy of the spectral model to the Suzaku data of 4U1630-472 (a black hole transient) and the Crab nebula around the M-edges are significantly reduced from those with the official Suzaku response.

ASTRO-H↗

Performance of a broad-band, high-resolution, transition-edge sensor spectrometer for x-ray astrophysics

Future x-ray astrophysics experiments require multiplexed readout of high-fill-factor, kilo-pixel arrays of transition-edge sensors (TESs), with very high spectral resolution over a broad range of energies. In this paper we report on a prototype kilo pixel array of Mo/Au TESs read out with 8-column by 32-row time-division multiplexing (TDM). This system is being used to demonstrate the critical detector and readout technology for ESA’s Athena X-IFU, and when complete will used to laboratory astrophysics experiments. Our array and TDM readout has demonstrated a combined energy resolution, including > 200 pixels, of: 1.95 eV for Ti-K (4.5 keV), 1.97 eV for Mn-K (5.9 keV), 2.16 eV for Co-Kα (6.9 keV), 2.33 eV for Cu-Kα (8 keV), 3.26 eV for Br-Kα (11.9 keV). The 1 sigma error is  0.01 eV for all spectra. These results meet the broad-band resolution requirements for X-IFU.

Stephen J. Smith↗

Simple, Compact, High-Resolution Monochromatic X-Ray Source for Characterization of X-Ray Calorimeter Arrays

X-ray calorimeters routinely achieve very high spectral resolution, typically a few eV full width at half maximum (FWHM). Measurements of calorimeter line shapes are usually dominated by the natural linewidth of most laboratory calibration sources. This compounds the data acquisition time necessary to statistically sample the instrumental line broadening and can add systematic uncertainty if the intrinsic line shape of the source is not well known. To address these issues, we have built a simple, compact monochromatic x-ray source using channel cut crystals. A commercial x-ray tube illuminates a pair of channel cut crystals that are aligned in a dispersive configuration to select the Kα1 line of the x-ray tube anode material. The entire device, including the x-ray tube, can be easily hand-carried by one person and may be positioned manually or using a mechanical translation stage. The output monochromatic beam provides a collimated image of the anode spot with magnification of unity in the dispersion direction (typically 100 μm–200 μm for the x-ray tubes used here) and is unfocused in the cross-dispersion direction so that the source image in the detector plane appears as a line. We measured output count rates as high as 10 count/s/pixel for the Hitomi soft x-ray spectrometer, which had 819 μm square pixels. We implemented different monochromator designs for energies of 5.4 keV (one design) and 8.0 keV (two designs), which have effective theoretical FWHM energy resolution of 0.125 eV, 0.197 eV, and 0.086 eV, respectively; these are well-suited for optimal calibration measurements of state-of-the art x-ray calorimeters. We measured an upper limit for the energy resolution of our Cr Kα1 monochromator of 0.7 eV FWHM at 5.4 keV, consistent with the theoretical prediction of 0.125 eV.

M A Leutenegger↗

Performance of a broad-band, high-resolution, transition-edge sensor spectrometer for X-ray astrophysics

Future X-ray astrophysics experiments require multiplexed readout of high fill-factor, kilo-pixel arrays of transition-edge sensors (TESs), with very high spectral resolution over a broad range of energies. In this paper we report on a prototype kilo-pixel array of Mo/Au TESs readout with 8-column by 32-row time-division multiplexing (TDM). This system is being used to demonstrate the critical detector and readout technology for ESA’s Athena X-IFU, and when complete will be used in laboratory astrophysics experiments. Our array and TDM readout have demonstrated a combined full-width-at-half-maximum energy resolution, including >200 pixels, of:1.95 eV for Ti-Ka(4.5 keV), 1.97eV for Mn-Ka(5.9 keV), 2.16 eV for Co-Kα(6.9 keV),2.33 eV for Cu-Kα(8 keV), 3.26 eV for Br-Kα(11.9 keV). The 1 sigma statistical errorsare£0.01 eV for all spectra. These results meet the broad-band resolution requirements for X-IFU with margin.

S J Smith↗

Electronic characteristics of 'real' CdS surfaces.

Photovoltage spectroscopy (including photovoltage inversion and photovoltage quenching) was used to determine the electronic characteristics of real (basal and prismatic) surfaces of CdS. In room atmosphere, surface states with the following positions were found in the cadmium surfaces: Ec - Et equal to 0.05, 0.4, and 0.8 eV, and Ev - Et equal to 0.83 eV. The same surface states were present in the sulfur surfaces, with the exception of those at Ec - Et equal to 0.4 eV. In the prismatic and unetched basal surfaces, states at Ec - Et equal to 1.1 eV were found in addition to all of those found on the cadmium surfaces.

Lagowski, J.↗

Angular dependence of electron impact excitation cross sections of O2.

Study of the electron-impact excitation spectrum of O2 at 20 and 45 eV impact energies and at scattering angles ranging from 10 to 90 deg. The angular behavior of the differential scattering cross sections for excitation of the a super 1 delta sub g, b super 1 sigma sub g (+), B super 3 sigma sub u (-) states for the 9.97-eV ('longest' band) and the 10.29-eV ('second' band) transitions, for the broad feature at 6.1 eV energy-loss, and for elastic scattering is determined. The experimentally measured relative differential and integral cross sections for these processes are approximately normalized to the absolute scale. The intensities of the different transitions in optical and electron-impact spectra are compared, and the importance of spin-orbit coupling and exchange processes is discussed. It is found that the energy-loss feature at 6.1 eV in the electron-impact spectrum is mostly due to the excitation of the c super 1 sigma sub u (-) state, and not the A super 3 sigma sub u (+) state, as had been previously thought.

Trajmar, S.↗

Preferential orientation of CO adsorption on Ni as determined by extended Hueckel calculations.

The adsorption of CO on the nickel surface has been calculated using a modified extended Hueckel technique for a number of different orientations of the CO with respect to the nickel surface. The calculations show that double site adsorption with the CO molecule normal to the surface and the carbon atom closest to the metal gives the most stable configuration (2.57 eV). The single site absorbs with an energy of 2.39 eV. However, other configurations also give fairly large bonding energies. The CO normal to the surface with oxygen closest to the metal gives a heat of adsorption of 0.37 eV. Two-center adsorption with the CO axis parallel to the surface and the molecule symmetrically placed between the nearest neighbors gives a chemisorption energy of 1.34 eV. These values compare with an experimental value of 1.98 eV.

Robertson, J. C.↗

Photoabsorption spectrum of UF6 by electron impact

The photoabsorption cross section of UF6 in the wavelength region between 206.7 nm (2.5 eV) and 43.5 nm (28.5 eV) has been derived from the UF6 electron energy loss spectra at a 5-deg scattering angle and at incident electron energies of 75 and 100 eV. The shape of the resulting optical spectrum agrees well with available high-resolution photoabsorption measurements in the 400 nm (3.1 eV) to 200 nm (6.3 eV) region. Below 200 nm, where no photoabsorption data are available, there is strong absorption and appreciable structure present. Absolute values of absorption cross sections have been obtained by normalizing the present relative data to the recently measured photoabsorption value at 225.5 nm.

Srivastava, S. K.↗

EPR and transient capacitance studies on electron-irradiated silicon solar cells

One and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.

Lee, Y. H.↗

An analytical study of electric vehicle handling dynamics

Hypothetical electric vehicle configurations were studied by applying available analytical methods. Elementary linearized models were used in addition to a highly sophisticated vehicle dynamics computer simulation technique. Physical properties of specific EV's were defined for various battery and powertrain packaging approaches applied to a range of weight distribution and inertial properties which characterize a generic class of EV's. Computer simulations of structured maneuvers were performed for predicting handling qualities in the normal driving range and during various extreme conditions related to accident avoidance. Results indicate that an EV with forward weight bias will possess handling qualities superior to a comparable EV that is rear-heavy or equally balanced. The importance of properly matching tires, suspension systems, and brake system front/rear torque proportioning to a given EV configuration during the design stage is demonstrated.

Greene, J. E.↗

The performance and efficiency of four motor/controller/battery systems for the simpler electric vehicles

A test and analysis program performed on four complete propulsion systems for an urban electric vehicle (EV) is described and results given. A dc series motor and a permanent magnet (PM) motor were tested, each powered by an EV battery pack and controlled by (1) a series/parallel voltage-switching (V-switch) system; and (2) a system using a pulse width modulation, 400 Hz transistorized chopper. Dynamometer tests were first performed, followed by eV performance predictions and data correlating road tests. During dynamometer tests using chopper control; current, voltage, and power were measured on both the battery and motor sides of the chopper, using three types of instrumentation. Conventional dc instruments provided adequate accuracy for eV power and energy measurements, when used on the battery side of the controller. When using the chopper controller, the addition of a small choke inductor improved system efficiency in the lower duty cycle range (some 8% increase at 50% duty cycle) with both types of motors. Overall system efficiency rankings during road tests were: (1) series motor with V-switch; (2) PM motor with V-switch; (3) series motor with chopper; and (4) PM motor with chopper. Chopper control of the eV was smoother and required less driver skill than V-switch control.

Shipps, P. R.↗

Losses in chopper-controlled DC series motors

Motors for electric vehicle (EV) applications must have different features than dc motors designed for industrial applications. The EV motor application is characterized by the following requirements: (1) the need for highest possible efficiency from light load to overload, for maximum EV range, (2) large short time overload capability (The ratio of peak to average power varies from 5/1 in heavy city traffic to 3/1 in suburban driving situations) and (3) operation from power supply voltage levels of 84 to 144 volts (probably 120 volts maximum). A test facility utilizing a dc generator as a substitute for a battery pack was designed and utilized. Criteria for the design of such a facility are presented. Two motors, differing in design detail, commercially available for EV use were tested. Losses measured are discussed, as are waves forms and their harmonic content, the measurements of resistance and inductance, EV motor/chopper application criteria, and motor design considerations.

Hamilton, H. B.↗

Etching of diamond with argon and oxygen ion beams

The angular dependences of the sputter yield of (100) single crystal diamond under argon and oxygen ion beams were investigated. For argon ion beams a large increase in the sputter yield was observed as the angle of incidence was increased from the normal, with a maximum occurring at approximately 60 deg from the normal. The magnitude of the increase and the angle at which the maximum was observed were dependent on the ion energy and species. The shape of the yield versus angle of incidence curve indicated the presence of a highly damaged surface layer. Large deviations from this curve were observed where ion incidence was along channeling directions. Studies with oxygen ion beams showed almost no angular dependence for 500 eV ions while at an energy of 1000 eV the angular dependence was similar to that for argon ions. At normal incidence the yield for 500 eV oxygen ions was seven times larger than that for 500 eV argon ions. For 1000 eV oxygen and argon ions the corresponding ratio is only 2.5. Implications for mechanisms of inert and reactive ion etching are discussed. Application of the data to ion beam shaping of diamond tips for ultrahigh pressure research is discussed.

Whetten, T. J.↗

Ultrasoft X-ray Background Observations of the Local Interstellar Medium

Preliminary results from a May 8, 1984 sounding rocket survey of the soft X-ray background are presented. The X-ray detectors are sensitive to X-rays in three soft X-ray bandpasses: 80 to 110 eV, 90 to 188 eV, and 284 to 532 eV (at 20% of peak response). The lowest energy X-rays in this range have a mean free path of order 10 to the 19th power/sq cm and provide information about the local interstellar medium. The count rate in the 80 to 110 eV energy band (the Be band) tracks the 90 to 188 (eV band (the B band) very well, indicating that the same approx. 1 million degree gas that is responsible for the B band emission may be responsible for the bulk of the Be band X-rays as well.

Sanders, W. T.↗

Muon content of gamma ray induced EAS from Cygnus X-3

During 1984 the Leeds group (Lambert et al, OG 2,1-6) have observed emission above 5 times 10 to the 14th power eV in July, September and October at phi approximately 0.6. These observations were made with an array which included the Nottingham 10 sq m muon detector. A search for muons in events at the phase peak and off source has yielded the following results: (1) for 42 on source events we find an average muon density of 0.63 muons m(-2) at a mean core distance Bar R = 32 m and mean primary energy approximately 25 times 10 to the 15th power eV; (2) for 21 off source events average muon density = 1.6 m(-2), Bar R = 32 m with mean primary energy approximately 2.0 x 10 to the 15th power eV; (3) for 11 of the 42 on source events, zero muons were recorded in the 10 sq ms. For these events Bar R = 41 m and mean primary energy approximately 1.5 x 10 to the 15th power eV; (4) for 8 of the 21 off source events, zero muons were recorded in the 10 sq ms. For these events Bar R = 37 m and mean primary energy approximately 1.5 times 10 to the 15th power eV. For all the events the mean zenith angle was approximately 16 deg. A more detailed comparison of on source and further off source events will be presented.

Blake, P. R.↗