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At least 289 records · Page 16

Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4° are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than ~2 × 10{sup 8} cm{sup –2} is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630–640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of the emission line.

36 MATERIALS SCIENCE↗

Control of monodomain polymer-stabilized cuboidal nanocrystals of chiral nematics by confinement.

Liquid crystals are important components of optical technologies. Cuboidal crystals consisting of chiral liquid crystals-the so-called blue phases (BPs), are of particular interest due to their crystalline structures and fast response times, but it is critical that control be gained over their phase behavior as well as the underlying dislocations and grain boundaries that arise in such systems. Blue phases exhibit cubic crystalline symmetries with lattice parameters in the 100 nm range and a network of disclination lines that can be polymerized to widen the range of temperatures over which they occur. Here, we introduce the concept of strain-controlled polymerization of BPs under confinement, which enables formation of strain-correlated stabilized morphologies that, under some circumstances, can adopt perfect single-crystal monodomain structures and undergo reversible crystal-to-crystal transformations, even if their disclination lines are polymerized. We have used super-resolution laser confocal microscopy to reveal the periodic structure and the lattice planes of the strain and polymerization stabilized BPs in 3D real space. Our experimental observations are supported and interpreted by relying on theory and computational simulations in terms of a free energy functional for a tensorial order parameter. Simulations are used to determine the orientation of the lattice planes unambiguously. The findings presented here offer opportunities for engineering optical devices based on single-crystal, polymer-stabilized BPs whose inherent liquid nature, fast dynamics, and long-range crystalline order can be fully exploited.

confinement↗

Quantification of complex-phase steel microstructure by using combined EBSD and EPMA measurements

Highlights: • In CP800 steel, bainite is the dominant phase with a typical lath (width 300 nm) structure and cementite precipitates. • Martensite is dispersed as small islands and only a few narrowed martensite bands are observed which has been induced by annealing process of cold rolled sheet. • The precise carbon content is measured in bainite and martensite utilizing EPMA line scans, which is around 0.2 wt% and 0.4 wt%, respectively. • Digitalization of the microstructure for CP800 is achieved by combining EBSD and EPMA techniques. • The final constituent map consists of plenty of microstructural features including topography, crystal structures, orientations and elemental distribution. - Abstract: We combined electron backscatter diffraction (EBSD) and electron probe microanalysis (EPMA) techniques to characterize the microstructure of industrial produced complex-phase CP800 steel. First, three major constituents (ferrite, martensite and bainite) are characterized. Then, transformation-induced dislocation zones in ferrite and bainitic regions consisting of different sub-structures are quantified and segmented. A final digitalized component map including plenty of microstructural features including crystal structures, orientations and elemental distribution are successfully achieved. The precise carbon content is measured in bainite and martensite utilizing EPMA line scans, which is around 0.2 wt% and 0.4 wt%, respectively. In the bainite phase of CP800, a typical Bagaryatski orientation relationship between cementite and lath-like bainitic ferrite is revealed based on the select diffraction patterns of transmission electron microscopy measurements.

36 MATERIALS SCIENCE↗

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

36 MATERIALS SCIENCE↗

Correlations between critical current density, j(sub c), critical temperature, T(sub c),and structural quality of Y1B2Cu3O(7-x) thin superconducting films

Correlations between critical current density (j(sub c)) critical temperature (T(sub c)) and the density of edge dislocations and nonuniform strain have been observed in YBCO thin films deposited by pulsed laser ablation on (001) LaAlO3 single crystals. Distinct maxima in j(sub c) as a function of the linewidths of the (00 l) Bragg reflections and as a function of the mosaic spread have been found in the epitaxial films. These maxima in j(sub c) indicate that the magnetic flux lines, in films of structural quality approachingthat of single crystals, are insufficiently pinned which results in a decreased critical current density. T(sub c) increased monotonically with improving crystalline quality and approached a value characteristic of a pure single crystal. A strong correlation between j(sub c) and the density of edge dislocations ND was found. At the maximum of the critical current density the density of edge dislocations was estimated to be N(sub D) approximately 1-2 x 10(exp 9)/sq cm.

Chrzanowski, J.↗

Quantitative three-dimensional characterization of block copolymer directed self-assembly on combined chemical and topographical prepatterned templates

Characterization of the three-dimensional (3D) structure in directed self-assembly (DSA) of block copolymers is crucial for understanding the complex relationships between the guiding template and the resulting polymer structure so DSA could be successfully implemented for advanced lithography applications. Here, we combined scanning transmission electron microscopy (STEM) tomography and coarse-grain simulations to probe the 3D structure of P2VP- b -PS- b -P2VP assembled on prepatterned templates using solvent vapor annealing. The templates consisted of nonpreferential background and raised guiding stripes that had PS-preferential top surfaces and P2VP-preferential sidewalls. The full 3D characterization allowed us to quantify the shape of the polymer domains and the interface between domains as a function of depth in the film and template geometry and offered important insights that were not accessible with 2D metrology. Sidewall guiding was advantageous in promoting the alignment and lowering the roughness of the P2VP domains over the sidewalls, but incommensurate confinement from the increased topography could cause roughness and intermittent dislocations in domains over the background region at the bottom of the film. The 3D characterization of bridge structures between domains over the background and breaks within domains on guiding lines sheds light on possible origins of common DSA defects. The positional fluctuations of the PS/P2VP interface between domains showed a depth-dependent behavior, with high levels of fluctuations near both the free surface of the film and the substrate and lower fluctuation levels in the middle of the film. As a result, this research demonstrates how 3D characterization offers a better understanding of DSA processes, leading to better design and fabrication of directing templates.

36 MATERIALS SCIENCE↗

Rapid trench initiated recrystallization and stagnation in narrow Cu interconnect lines

Understanding and ultimately controlling the self-annealing of Cu in narrow interconnect lines has remained a top priority in order to continue down-scaling of back-end of the line interconnects. Recently, it was hypothesized that a bottom-up microstructural transformation process in narrow interconnect features competes with the surface-initiated overburden transformation. Here, a set of transmission electron microscopy images which captures the grain coarsening process in 48 nm lines in a time resolved manner is presented, supporting such a process. Grain size measurements taken from these images have demonstrated that the Cu microstructural transformation in 48 nm interconnect lines stagnates after only 1.5 h at room temperature. This stubborn metastable structure remains stagnant, even after aggressive elevated temperature anneals, suggesting that a limited internal energy source such as dislocation content is driving the transformation. As indicated by the extremely low defect density found in 48 nm trenches, a rapid recrystallization process driven by annihilation of defects in the trenches appears to give way to a metastable microstructure in the trenches.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Coupling 2D atomistic information to 3D kink-pair enthalpy models of screw dislocations in bcc metals

The kink-pair activation enthalpy is a fundamental parameter in the theory of plasticity of body-centered cubic (bcc) metals. It controls the thermally activated motion of screw dislocation at low and intermediate temperatures. While direct atomistic calculations of kink pairs on screw dislocations have reached a high degree of accuracy, they can only be practically performed using semiempirical interatomic force fields, as electronic structure methods have not yet reached the level of efficiency needed to capture the system sizes required to model kink-pair structures. In this context, an alternative approach based on standard three-dimensional elastic models, which are efficient but lack atomic-level information, coupled to a substrate potential that represents the underlying lattice, has been widely applied over the past few years. This class of methods, known as ‘line-on-substrate’ (LOS) models, uses the substrate potential to calculate the lattice contribution to the kink-pair energies. In this work, we introduce the stress dependence of the substrate potential into LOS models to evaluate its impact on kink-pair energies. In addition, we include asymmetric dislocation core energies as an extra descriptor of the dislocation character. This asymmetry is also elevated to the continuum level by adding core energies to the general LOS formulation and used to explain potential energy differences known to exist between left and right kinks in bcc metals. Finally, more importantly, by matching the total LOS energies to previously calculated atomistic energies of kink-pair configurations, we issue a rule to establish the value of the so-called core width in nonsingular elasticity theories and reduce its arbitrariness as a mathematical construct.

36 MATERIALS SCIENCE↗

Sink strength and dislocation bias of three-dimensional microstructures

Irradiation induces significant changes in the microstructure of structural materials, many of which are driven by the preferential capture of point defects at particular sinks, such as dislocations. To quantify the kinetics of defect absorption at sinks, theoretical models of radiation damage generally rely on the concept of sink strength. However, analytical approaches to estimating the sink strength of dislocations rely, in turn, on a series of geometrical assumptions, idealizing the dislocation network as a series of infinite straight dislocations or isolated loops, often with artificial boundary conditions. In this paper, we use a recently developed technique to quantify point defect capture in three-dimensional dislocation networks. We integrate this technique with discrete dislocation dynamics to analyze the sink strengths of realistic dislocation microstructures consisting of a mixture of edge, screw, and junction segments, complete with an accurate description of the strain fields these microstructures produce and the resultant energetic interactions experienced by point defects. Furthermore, we show that the effective kinetics for absorbing point defects can vary significantly with the arrangement of the microstructure with a strong dependence on the structure and character of its dislocation content and introduce a surrogate model for sink strength which incorporates these effects.

36 MATERIALS SCIENCE↗

Fatigue and creep-fatigue deformation of several nickel-base superalloys at 650 C

Transmission electron microscopy has been used to study the bulk deformation characteristics of seven nickel-base superalloys tested in fatigue and creep-fatigue at 650 C. The alloys were Waspalloy, HIP Astroloy, H plus F Astroloy, H plus F Rene 95, IN 100, MERL 76, and NASA IIB-7. The amount of bulk deformation observed in all the alloys was low. In tests with inelastic strain amplitudes less than about 0.003, only some grains exhibited yielding and the majority of those had the 110 line near the tensile axis. Deformation occurred on octahedral systems for all of the alloys except MERL 76 which also showed abundant primary cube slip. Creep-fatigue cycling occasionally produced extended faults between partial dislocations, but otherwise deformation was much the same as for fatigue cycling.

Miner, R. V.↗

Fingerprinting shock-induced deformations via diffraction

Abstract During the various stages of shock loading, many transient modes of deformation can activate and deactivate to affect the final state of a material. In order to fundamentally understand and optimize a shock response, researchers seek the ability to probe these modes in real-time and measure the microstructural evolutions with nanoscale resolution. Neither post-mortem analysis on recovered samples nor continuum-based methods during shock testing meet both requirements. High-speed diffraction offers a solution, but the interpretation of diffractograms suffers numerous debates and uncertainties. By atomistically simulating the shock, X-ray diffraction, and electron diffraction of three representative BCC and FCC metallic systems, we systematically isolated the characteristic fingerprints of salient deformation modes, such as dislocation slip (stacking faults), deformation twinning, and phase transformation as observed in experimental diffractograms. This study demonstrates how to use simulated diffractograms to connect the contributions from concurrent deformation modes to the evolutions of both 1D line profiles and 2D patterns for diffractograms from single crystals. Harnessing these fingerprints alongside information on local pressures and plasticity contributions facilitate the interpretation of shock experiments with cutting-edge resolution in both space and time.

36 MATERIALS SCIENCE↗

Interaction between a circular inclusion and an arbitrarily oriented crack

The plane interaction problem for a circular elastic inclusion imbedded into an elastic matrix which contains an arbitrarily oriented crack is considered. Using the existing solutions for the edge dislocations as Green's functions, first the general problem of a through crack in the form of an arbitrary smooth arc located in the matrix in the vicinity of the inclusion is formulated. The integral equations for the line crack are then obtained as a system of singular integral equation with simple Cauchy kernels. The singular behavior of the stresses around the crack tips is examined and the expressions for the stress intensity factors representing the strength of the stress singularities are obtained in terms of the asymptotic values of the density functions of the integral equations. The problem is solved for various typical crack orientations and the corresponding stress intensity factors are given.

Erdogan, F.↗

Interaction between a circular inclusion and an arbitrarily oriented crack

The plane interaction problem for a circular elastic inclusion embedded in an elastic matrix which contains an arbitrarily oriented crack is considered. Using the existing solutions for the edge dislocations as Green's functions, first the general problem of a through crack in the form of an arbitrary smooth arc located in the matrix in the vicinity of the inclusion is formulated. The integral equations for the line crack are then obtained as a system of singular integral equations with simple Cauchy kernels. The singular behavior of the stresses around the crack tips is examined and the expressions for the stress-intensity factors representing the strength of the stress singularities are obtained in terms of the asymptotic values of the density functions of the integral equations. The problem is solved for various typical crack orientations and the corresponding stress-intensity factors are given.

Erdogan, F.↗

Characterization of plasma in RF jet interacting with water: Thomson scattering versus spectral line broadening

Here, we carry out a detailed characterization of an Ar radiofrequency plasma jet interacting with liquid. The focus of the paper is measurement of the electron density by examining the Stark broadening of hydrogen Balmer α line and Thomson scattering (TS). Supporting diagnostics are done to investigate the channel evolution and movement, and gas temperature. The comparison of the two approaches shows the caveats and the advantages that should gain attention in future applications. In particular, the plasma channel dynamics have a significant impact on the TS signal and may result in physical phenomena being missed due to channel dislocations. The conclusions of the work elucidate the pitfalls for interpreting the results of TS when the discharge is a dynamic filamentary plasma. This work establishes the temporal evolution of the plasma and the gas parameters in a plasma–liquid system employed for investigation of plasma-induced electrodeless electrochemistry.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers

We investigate the microscopic distributions of sub-band-gap luminescence emission (the so-called D-lines D1/D2/D3/D4) and the band-to-band luminescence intensity, near recombination-active sub-grain boundaries in multicrystalline silicon wafers for solar cells. We find that the sub-band-gap luminescence from decorating defects/impurities (D1/D2) and from intrinsic dislocations (D3/D4) have distinctly different spatial distributions, and are asymmetric across the sub-grain boundaries. The presence of D1/D2 is correlated with a strong reduction in the band-to-band luminescence, indicating a higher recombination activity. In contrast, D3/D4 emissions are not strongly correlated with the band-to-band intensity. Based on spatially-resolved, synchrotron-based micro-X-ray fluorescence measurements of metal impurities, we confirm that high densities of metal impurities are present at locations with strong D1/D2 emission but low D3/D4 emission. Finally, we show that the observed asymmetry of the sub-band-gap luminescence across the sub-grain boundaries is due to their inclination below the wafer surface. Based on the luminescence asymmetries, the sub-grain boundaries are shown to share a common inclination locally, rather than be orientated randomly.

14 SOLAR ENERGY↗

Observation of thermally etched grain boundaries with the FIB/TEM technique

Thermal etching is a method which is able to reveal and characterize grain boundaries, twins or dislocation structures and determine parameters such as grain boundary energies, surface diffusivities or study phase transformations in steels, intermetallics or ceramic materials. This method relies on the preferential transfer of matter away from grain boundaries on a polished sample during heating at high temperatures in an inert/vacuum atmosphere. The evaporation/diffusion of atoms at high temperatures results in the formation of grooves at the intersections of the planes of grain/twin boundaries with the polished surface. This work describes how the combined use of Focussed Ion Beam and Transmission Electron Microscopy can be used to characterize not only the grooves and their profile with the surface, but also the grain boundary line below the groove, this method being complementary to the commonly used scanning probe techniques. - Highlights: • Thermally etched low-carbon steel samples have been characterized by FIB/TEM • Grain boundary (GB) lines below the groove have been characterized in this way • Absence of ghost traces and large θ angle suggests that GB are not stationary but mobile • Observations correlate well with previous works and Mullins' investigations [22].

36 MATERIALS SCIENCE↗

Microstructure, Texture, and Strength Development during High-Pressure Torsion of CrMnFeCoNi High-Entropy Alloy

The equiatomic face-centered cubic high-entropy alloy CrMnFeCoNi was severely deformed at room and liquid nitrogen temperature by high-pressure torsion up to shear strains of about 170. Its microstructure was analyzed by X-ray line profile analysis and transmission electron microscopy and its texture by X-ray microdiffraction. Microhardness measurements, after severe plastic deformation, were done at room temperature. It is shown that at a shear strain of about 20, a steady state grain size of 24 nm, and a dislocation density of the order of 1016 m−2 is reached. The dislocations are mainly screw-type with low dipole character. Mechanical twinning at room temperature is replaced by a martensitic phase transformation at 77 K. The texture developed at room temperature is typical for sheared face-centered cubic nanocrystalline metals, but it is extremely weak and becomes almost random after high-pressure torsion at 77 K. The strength of the nanocrystalline material produced by high-pressure torsion at 77 K is lower than that produced at room temperature. The results are discussed in terms of different mechanisms of deformation, including dislocation generation and propagation, twinning, grain boundary sliding, and phase transformation.

36 MATERIALS SCIENCE↗

In situ TEM and synchrotron characterization of U–10Mo thin specimen annealed at the fast reactor temperature regime

U–Mo metallic alloys have been extensively used for the Reduced Enrichment for Research and Test Reactors (RERTR) program, which is now known as the Office of Material Management and Minimization under the Conversion Program. This fuel form has also recently been proposed as fast reactor metallic fuels in the recent DOE Ultra-high Burnup Fast Reactor project. In order to better understand the behavior of U–10Mo fuels within the fast reactor temperature regime, a series of annealing and characterization experiments have been performed. Annealing experiments were performed in situ at the Intermediate Voltage Electron Microscope (IVEM-Tandem) facility at Argonne National Laboratory (ANL). An electro-polished U–10Mo alloy fuel specimen was annealed in situ up to 700 °C. At an elevated temperature of about 540 °C, the U–10Mo specimen underwent a relatively slow microstructure transition. Nano-sized grains were observed to emerge near the surface. At the end temperature of 700 °C, the near-surface microstructure had evolved to a nano-crystalline state. In order to clarify the nature of the observed microstructure, Laue diffraction and powder diffraction experiments were carried out at beam line 34-ID of the Advanced Photon Source (APS) at ANL. Phases present in the as-annealed specimen were identified with both Laue diffraction and powder diffraction techniques. The U–10Mo was found to recrystallize due to thermally-induced recrystallization driven by a high density of pre-existing dislocations. A separate in situ annealing experiment was carried out with a Focused Ion Beam processed (FIB) specimen. A similar microstructure transition occurred at a lower temperature of about 460 °C with a much faster transition rate compared to the electro-polished specimen. - Highlights: • TEM annealing experiments were performed in situ at the IVEM facility up to fast reactor temperature. • At 540 °C, the U-10Mo specimen underwent a slow microstructure transition where nano-sized grains were observed to emerge. • UO{sub 2} phase exists at the thin area of the as-annealed specimen whereas U-10Mo γ phase dominated at the thicker part. • Bcc γ U-10Mo recrystallized to become nano-meter sized crystallites near the specimen surface. • A separateannealing experiment was conducted with a FIB processed specimen where similar transition occurred at a lower temperature of 460 °C with a faster rate.

36 MATERIALS SCIENCE↗