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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Surface Electronic Structure of Cr Doped Bi 2 Se 3 Single Crystals

Here, by using angle-resolved photoemission spectroscopy, we showed that Bi 2-x Cr x Se 3 single crystals have a distinctly well-defined band structure with a large bulk band gap and undistorted topological surface states. These spectral features are unlike their thin film forms in which a large nonmagnetic gap with a distorted band structure was reported. We further provide laser-based high resolution photoemission data which reveal a Dirac point gap even in the pristine sample. The gap becomes more pronounced with Cr doping into the bulk of Bi 2 Se 3 . These observations show that the Dirac point can be modified by the magnetic impurities as well as the light source.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Nanoscale Control of Intrinsic Magnetic Topological Insulator MnBi 2 Te 4 Using Molecular Beam Epitaxy: Implications for Defect Control

Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between the topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, in this study, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth of MnBi 2 Te 4 thin films on Si (111), epitaxial graphene, and highly ordered pyrolytic graphite substrates. By combining a suite of in situ characterization techniques, we obtain critical insights into the nanoscale control of MnBi 2 Te 4 epitaxial growth. First, we extract the free energy landscape for the epitaxial relationship as a function of the in-plane angular distribution. Then, by employing an optimized layer-by-layer growth, we determine the chemical potential and Dirac point of the thin film at different thicknesses and how this quantity is manifested by the dopant compensation from different antisite defects. Overall, these results establish a foundation for understanding the growth kinetics of MnBi 2 Te 4 and pave the way for future applications of MBE-grown thin films in emerging topological quantum materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Chiral Magnetic Josephson Junction as a Base for Low-Noise Superconducting Qubits

The lack of space inversion symmetry endows non-centrosymmetric superconducting materials with various interesting parity-breaking phenomena, including the anomalous Josephson effect. Our paper considers a Josephson junction of two non-centrosymmetric superconductors connected by a uniaxial ferromagnet. We show that this “Chiral Magnetic Josephson junction” (CMJ junction) exhibits a direct analog of the Chiral Magnetic Effect, which has already been observed in Weyl and Dirac semimetals. We suggest that the CMJ can serve as an element of a qubit with a Hamiltonian tunable by the ferromagnet’s magnetization. The CMJ junction avoids using an offset magnetic flux in inductively shunted qubits, thus enabling a simpler and more robust architecture. Furthermore, when the uniaxial ferromagnet’s easy axis is directed across the junction, the resulting “chiral magnetic qubit” provides robust protection from the noise caused by magnetization fluctuations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2026

Electronic structure of the kagome compound CaTi 3⁢ Bi 4 using high-field torque magnetometry and density functional theory

Here, we report systematic torque magnetometry measurements to investigate the electronic properties of the newly discovered kagome compound CaTi 3 ⁢Bi 4 . Electrical transport, magnetic susceptibility, and thermal measurements reveal no evidence of a magnetic ground state in this material. Torque data obtained in magnetic fields up to 41.5 T exhibit clear de Haas–van Alphen (dHvA) oscillations, with nine distinct frequencies ranging from 13 to 6164 T. Angular-dependent dHvA measurements show that, with the exception of the lowest frequency (13 T), all observed frequencies nearly follow a 1/cos ⁡𝜃 dependence, where 𝜃 is the angle between the crystallographic 𝑐 axis and the magnetic field direction. This behavior is characteristic of quasi-two-dimensional Fermi-surface sheets with nearly circular cross sections. To further elucidate the electronic structure, we performed density functional theory (DFT) calculations of the band structure and Fermi surface. The calculated bands reveal the presence of multiple Dirac points (DP), flat bands (FB), and van Hove singularities (VHS) near the Fermi level. The resulting Fermi surface consists of several quasi-two-dimensional cylindrical sheets, consistent with the experimentally observed 1/cos⁡ 𝜃 dependence. Notably, the theoretical dHvA frequencies, derived from extremal Fermi-surface cross-sectional areas, agree well with the experimental values and reproduce their angular dependence. Remarkably, all experimentally observed frequencies are captured by the DFT predictions. Pressure-dependent calculations up to 10 GPa show that the electronic features—DP, FB, and VHS—evolve systematically with pressure. In particular, the VHS shifts closer to the Fermi level, demonstrating that pressure acts as an effective tuning parameter in this material. These combined experimental and theoretical results provide a comprehensive understanding of the electronic structure of CaTi 3 ⁢Bi 4 and demonstrate how pressure can be used to tune its key electronic features, offering valuable guidance for exploring related kagome materials.

Shtefiienko, Kyryl [West Texas A & M University, C↗
DOE OSTI2021

Modeling the electrical double layer at solid-state electrochemical interfaces

Models of the electrical double layer (EDL) at electrode/liquid-electrolyte interfaces no longer hold for all-solid-state electrochemistry. Here we show a more general model for the EDL at a solid-state electrochemical interface based on the Poisson–Fermi–Dirac equation. By combining this model with density functional theory predictions, the interconnected electronic and ionic degrees of freedom in all-solid-state batteries, including the electronic band bending and defect concentration variation in the space-charge layer, are captured self-consistently. Along with a general mathematical solution, the EDL structure is presented in various materials that are thermodynamically stable in contact with a lithium metal anode: the solid electrolyte Li 7 La 3 Zr 2 O 12 (LLZO) and the solid interlayer materials LiF, Li 2 O and Li 2 CO 3 . Here, the model further allows design of the optimum interlayer thicknesses to minimize the electrostatic barrier for lithium ion transport at relevant solid-state battery interfaces.

25 ENERGY STORAGE↗
DOE OSTI2026

Gaunt and Breit two-electron contributions to mean-field transformations and fine structure splitting

Materials utilized by novel energy systems are often studied using weakly correlated mean-field theories. However, if these systems incorporate heavy elements, relativistic effects must be included. Therefore, a Kramers unrestricted coupled cluster with singles and doubles excitation formalism within a molecular mean-field exact two-component framework (X2C mmf ) using a four-component Dirac–Hartree–Fock (DHF) reference state is presented. The exact X2C mmf transformed normal-order Hamiltonian incorporates all one-electron and two-electron (2e) contributions from the Coulomb, Gaunt, and Breit operators and is used with the equation of motion method to calculate the excitation energies of the alkali group of elements. Using this framework, the effects of 2e Gaunt and Breit integrals are studied. Results demonstrate growing contributions from these integrals to the generated X2C mmf mean-fields and electronic fine structure calculations with increasing atomic number. Overall, this paper outlines the method, its effect within the X2C mmf approach, and lays the foundation for future theoretical development of relativistic calculations within this framework.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Breaking of Inversion Symmetry and Interlayer Electronic Coupling in Bilayer Graphene Heterostructure by Structural Implementation of High Electric Displacement Fields

Controlling the interlayer coupling in two-dimensional (2D) materials generates novel electronic and topological phases. Its effective implementation is commonly done with a transverse electric field. However, phases generated by high displacement fields are elusive in this standard approach. Here, we introduce an exceptionally large displacement field by structural modification of a model system: AB-stacked bilayer graphene (BLG) on a SiC(0001) surface. We show that upon intercalation of gadolinium, electronic states in the top graphene layers exhibit a significant difference in the on-site potential energy, which effectively breaks the interlayer coupling between them. As a result, for energies close to the corresponding Dirac points, the BLG system behaves like two electronically isolated single graphene layers. This is proven by local scanning tunneling microscopy (STM)/spectroscopy, corroborated by density functional theory, tight binding, and multiprobe STM transport. Further, the work presents metal intercalation as a promising approach for the synthesis of 2D graphene heterostructures with electronic phases generated by giant displacement fields.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Gauge theory of giant phonon magnetic moment in doped Dirac semimetals

Here, we develop a quantitative theory of phonon magnetic moment in doped Dirac semimetals. Our theory is based on an emergent gauge field approach to the electron-phonon coupling, applicable to gapless systems. We find that the magnetic moment is directly proportional to the electrical Hall conductivity through the phonon Hall viscosity. Our theory is combined with the first-principles calculations, allowing us to quantitatively implement it to realistic materials. Magnetic moments are found to be of the order of a Bohr magneton for Raman-active phonon modes in graphene and Cd 3 ⁢As 2 . Our results provide practical guidance for the dynamical generation of large magnetization in quantum materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Ultrafast optical control of surface and bulk magnetism in magnetic topological insulator/antiferromagnet heterostructure

Abstract Optical control of the magnetic properties in topological insulator systems is an important step in applying these materials in ultrafast optoelectronic and spintronic schemes. In this work, we report the experimental observation of photo-induced magnetization dynamics in the magnetically doped topological insulator (MTI)/antiferromagnet (AFM) heterostructure composed of Cr-(Bi,Sb) 2 Te 3 /CrSb. Through proximity coupling to the AFM layer, the MTI displays a dramatically enhanced magnetism, with robust perpendicular magnetic anisotropy. When subjected to intense laser irradiation, both surface and bulk magnetism of the MTI are weakened by laser-induced heating of the lattice, however, at the surface, the deleterious heat effect is compensated by the strengthening of Dirac-hole-mediated exchange coupling as demonstrated by an unconventional pump-fluence-dependent exchange-bias effect. Through theoretical analyses, the sizes of exchange coupling energies are estimated in the MTI/AFM bilayer structure. The fundamentally different mechanisms supporting the surface and bulk magnetic order in MTIs allow a novel and distinctive photo-induced transient magnetic state with antiparallel spin configuration, which broadens the understanding of the magnetization dynamics of MTIs under ultrashort and intense optical excitation.

42 ENGINEERING↗
DOE OSTI2023

Nearly flat Chern band in periodically strained monolayer and bilayer graphene

The flat band is a key ingredient for the realization of interesting quantum states for functionalities. Here, in this paper, we investigate the conditions for the flat band in both monolayer and bilayer graphene under periodic strain. We find topological nearly flat bands with homogeneous distribution of Berry curvature in both systems. The quantum metric of the nearly flat band closely resembles that for Landau levels. For monolayer graphene, the strain field can be regarded as an effective gauge field, while for Bernal-stacked (AB-stacked) bilayer graphene, its role is beyond the description of a gauge field. We also provide an understanding of the origin of the nearly flat band in monolayer graphene in terms of the Jackiw-Rebbi model for Dirac fermions with sign-changing mass. In this paper, we suggest strained graphene as a promising platform for strongly correlated quantum states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Intrinsic axion insulating behavior in antiferromagnetic MnBi 6 Te 10

A striking feature of time-reversal symmetry (TRS) protected topological insulators (TIs) is that they are characterized by a half integer quantum Hall effect on the boundary when the surface states are gapped by time-reversal breaking perturbations. While TRS-protected TIs have become increasingly under control, magnetic analogs are still a largely unexplored territory with novel rich structures. In particular, magnetic topological insulators can also host a quantized axion term in the presence of lattice symmetries. Since these symmetries are naturally broken on the boundary, the surface states can develop a gap without external manipulation. In this work, we combine theoretical analysis, density-functional calculations and experimental evidence to reveal intrinsic axion insulating behavior in MnBi 6 Te 10 . Additionally, the quantized axion term arises from the simplest possible mechanism in the antiferromagnetic regime where it is protected by inversion symmetry and the product of a fractional translation and TRS. The anticipated gapping of the Dirac surface state at the edge is subsequently experimentally established using angle resolved photoemission spectroscopy (ARPES). As a result, this system provides the magnetic analog of the simplest TRS-protected TI with a single, gapped Dirac cone at the surface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Infrared fixed points of higher-spin fermions in topological semimetals

We determine the fate of interacting fermions described by the Hamiltonian H = p ∙ J in three-dimensional topological semimetals with linear band crossing, where p is momentum and J are the spin- j matrices for half-integer pseudospin j ≥ 3/2. While weak short-range interactions are irrelevant at the crossing point due to the vanishing density of states, weak long-range Coulomb interactions lead to a renormalization of the band structure. Using a self-consistent perturbative renormalization group approach, we show that band crossings of the type p ∙ J are unstable for j ≤ 7/2. Instead, through an intriguing interplay between cubic crystal symmetry, band topology, and interaction effects, the system is attracted to a variety of infrared fixed points. We also unravel several other properties of higher-spin fermions for general j , such as the relation between fermion self-energy and free energy, or the vanishing of the renormalized charge. An O(3) symmetric fixed point composed of equal chirality Weyl fermions is stable for j ≤ 7/2 and very likely so for all j. We then explore the rich fixed point structure for j = 5/2 in detail. We find additional attractive fixed points with enhanced O ( 3 ) symmetry that host both emergent Weyl or massless Dirac fermions, and identify a puzzling, infrared stable, anisotropic fixed point without enhanced symmetry in close analogy to the known case of j = 3/2.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Partial charge transfer and absence of induced magnetization in EuS(111)/Bi 2 Se 3 heterostructures

We report that heterostructures made from topological and magnetic insulators promise to form excellent platforms for new electronic and spintronic functionalities mediated by interfacial effects. We report the results of a first-principles density functional theory study of the geometric, electronic structure, and magnetic properties of the EuS( 111 )/Bi 2 Se 3 interface, including van der Waals and relativistic spin-orbit effects. In contrast to previous theoretical studies, we find no appreciable magnetic anisotropy in such a heterostructure. We also do not see additional induced magnetization at the interface or the magnetic proximity effect on the topological states. This is due to the localized nature of Eu moments and because of a partial charge transfer of ~ 0.5 electron from Eu to Se. The formation of the surface dipole shifts the Dirac cone about 0.4 eV below the chemical potential, and the associated electrostatic screening moves the topological state from the first to the second quintuple layer of Bi 2 Se 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2022

Quasi-two-dimensional Fermi surface of superconducting line-nodal metal CaSb 2

We report on the Fermi surfaces and superconducting parameters of CaSb 2 single crystals (superconducting below T c ~1.8K) grown by the self-flux method. The frequency of de Haas–van Alphen and Shubnikov–de Haas oscillations evidences a quasi-two-dimensional (quasi-2D) Fermi surface, consistent with one of the Fermi surfaces forming Dirac lines predicted by first-principles calculations. Measurements in the superconducting state reveal that CaSb 2 is close to a type-I superconductor with the Ginzburg-Landau parameter of around unity. The temperature dependence of the upper critical field H c2 is well described by a model considering two superconducting bands, and the enhancement of the effective mass estimated from H c2 (0K) is consistent with the quasi-2D band observed by the quantum oscillations. Our results indicate that a quasi-2D band forming Dirac lines contributes to the superconductivity in CaSb 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2023

Topological Circular Dichroism in Chiral Multifold Semimetals

Uncovering the physical contents of the nontrivial topology of quantum states is a critical problem in condensed matter physics. Here, we study the topological circular dichroism in chiral semimetals using linear response theory and first-principles calculations. We show that, when the low-energy spectrum respects emergent SO(3) rotational symmetry, topological circular dichroism is forbidden for Weyl fermions, and thus is unique to chiral multifold fermions. This is a result of the selection rule that is imposed by the emergent symmetry under the combination of particle-hole conjugation and spatial inversion. Using first-principles calculations, we predict that topological circular dichroism occurs in CoSi for photon energy below about 0.2 eV. In conclusion, our Letter demonstrates the existence of a response property of unconventional fermions that is fundamentally different from the response of Dirac and Weyl fermions, motivating further study to uncover other unique responses.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Large Magnetic Gap in a Designer Ferromagnet–Topological Insulator–Ferromagnet Heterostructure

Abstract Combining magnetism and nontrivial band topology gives rise to quantum anomalous Hall (QAH) insulators and exotic quantum phases such as the QAH effect where current flows without dissipation along quantized edge states. Inducing magnetic order in topological insulators via proximity to a magnetic material offers a promising pathway toward achieving the QAH effect at a high temperature for lossless transport applications. One promising architecture involves a sandwich structure comprising two single‐septuple layers (1SL) of MnBi 2 Te 4 (a 2D ferromagnetic insulator) with ultrathin few quintuple layer (QL) Bi 2 Te 3 in the middle, and it is predicted to yield a robust QAH insulator phase with a large bandgap greater than 50 meV. Here, the growth of a 1SL MnBi 2 Te 4 /4QL Bi 2 Te 3 /1SL MnBi 2 Te 4 heterostructure via molecular beam epitaxy is demonstrated and the electronic structure probed using angle‐resolved photoelectron spectroscopy. Strong hexagonally warped massive Dirac fermions and a bandgap of 75 ± 15 meV are observed. The magnetic origin of the gap is confirmed by the observation of the exchange‐Rashba effect, as well as the vanishing bandgap above the Curie temperature, in agreement with density functional theory calculations. These findings provide insights into magnetic proximity effects in topological insulators and reveal a promising platform for realizing the QAH effect at elevated temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Mixed stochastic-deterministic density functional theoretic decomposition of Kubo–Greenwood conductivities in the projector augmented wave formalism

Pairing the accuracy of the Kohn–Sham density-functional framework with the efficiency of a stochastic algorithmic approach, mixed stochastic-deterministic density functional theory (mDFT) achieves a favorable computational scaling with system sizes and electronic temperatures. We employ the recently developed mDFT formalism to investigate the dynamic charge-transport properties of systems in the warm dense matter regime. The optical conductivity spectra are computed for single- and multi- component mixtures of carbon, hydrogen, and beryllium using two complementary approaches: Kubo–Greenwood in the mDFT picture and real-time time-dependent mDFT. We further devise a decomposition of the Onsager coefficients leading up to the Kubo–Greenwood spectra to exhibit contributions from the deterministic, stochastic, and mixed electronic state transitions at different incident photon energies.

36 MATERIALS SCIENCE↗