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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Methods for Color Center Preserving Hydrogen‐Termination of Diamond

Abstract Chemical functionalization of diamond surfaces by hydrogen is an important method for controlling the charge state of near‐surface fluorescent color centers, an essential process in fabricating devices such as diamond field‐effect transistors and chemical sensors, and a required first step for realizing families of more complex terminations through subsequent chemical processing. In all these cases, termination is typically achieved using hydrogen plasma sources that can etch or damage the diamond, as well as deposited materials or embedded color centers. This work explores alternative methods for lower‐damage hydrogenation of diamond surfaces, specifically the annealing of diamond samples in high‐purity, non‐explosive mixtures of nitrogen and hydrogen gas, and the exposure of samples to microwave hydrogen plasmas in the absence of intentional stage heating. The effectiveness of these methods are characterized by x‐ray photoelectron spectroscopy (XPS), and comparison of the results to density‐functional modelling of the surface hydrogenation energetics implicates surface oxygen ligands as the primary factor limiting the termination quality of annealed samples. Finally, photoluminescence (PL) spectroscopy is used to verify that both the annealing and reduced sample temperature plasma methods are non‐destructive to near‐surface ensembles of nitrogen‐vacancy (NV) centers, in stark contrast to plasma treatments that use heated sample stages.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor

In this work, we present the theory and modeling framework of a diamond optically gated junction field‐effect transistor (DOGFET). The device utilizes nitrogen substitutional centers in type‐1b diamond to optically modulate a p‐ boron doped diamond channel. Using sub‐gap lasers with intensities as low as 100 W/cm 2 , electrons are optically excited from substitutional nitrogen sites to the conduction band of the diamond substrate, thus enabling the optical gate to exercise control on modulating the space‐charge region at the junction and therefore the channel conductivity. We show that the device can deliver a current of 7 μA/μm, or equivalently 1750 A/cm 2 , while switching at a frequency greater than 100 kHz, in a form factor of 5 μm 2 . The breakdown voltage is found to be greater than 1850 V, with a breakdown field strength of ~13 MV/cm. Moreover, the device supports nonvolatile operation with a “memory effect” enabling single transistor state retention. The presented simulation framework provides a physically grounded insight into the limits and opportunities of optoelectronic diamond systems.

Engineering - Electronic and electrical engineerin↗
DOE OSTI2018

Identification of Natural and Synthetic Diamonds from Their Optical Absorption and Cathodoluminescence Spectra

The optical absorption and cathodoluminescence spectra of nine diamond specimens are investigated at the temperatures 295 K and 82–295 K, respectively. By the presence of an N3a electron-vibrational system with a phonon-free line at 2.68 eV, six of them are identified as natural diamonds. By the presence of the electron-vibrational system at 2.56 eV and a structureless band at 2.54 eV, associated with nickel in the optical absorption and luminescence spectra, two specimens are identified as synthetic diamonds grown at high pressures and temperatures. By the presence of exciton luminescence at 5.271 eV and the absence of any spectral, impurity-related peculiarities, one of the specimens is identified as a synthetic diamond grown by the chemical vapor deposition. Based on the data obtained, a procedure is proposed for identifying natural and synthetic diamonds and determining a model scheme of the radiation-thermal treatment of the specimens.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Ultra-high aspect ratio pores milled in diamond via laser, ion and electron beam mediated processes

Microfabrication techniques are critical for the rapid prototyping and development of applications for cutting edge materials. Recently diamond has gained considerable interest for quantum photonic, biosensing, inertial confinement fusion and magnetometer applications. In this article, ultra-high aspect ratio milling of diamond micropores by photon, ion and electron based methods is reported. A multiphoton absorption laser ablation approach is revealed to rapidly produce sub-10 μm diameter micropores in diamond with an aspect ratio of 14:1 and a tapered profile at the surface interface. Chemically active, oxygen focused ion beam milling produces high-aspect ratio pores in diamond with an aspect ratio of 65:1 and minimal tapering over the length of the pore, overcoming the physical interaction volume limitations imposed in conventional gallium based focused ion beam milling and laser ablation methods. Oxygen-mediated electron beam induced etching is revealed to negate the limitations imposed by physical sputtering mechanisms utilized in focused ion beam milling via the direct initiation of chemical reactions at the receding surface, producing aspect ratios on the order of 200:1. Numerical simulations reveal the physical basis for the superior aspect-ratio pore milling of the oxygen focused ion beam milling and electron beam induced etching methods. Our results demonstrate direct-write methods for the fabrication of ultra-high aspect micropores in diamond and provide insight into the underlying mechanisms of these physical processes. The three methods demonstrated here can be interchanged for applications based on the desired characteristic aspect ratio and process throughput.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Scintillation properties of diamond powders and feasibility of using them in thermal neutron detectors

Diamond offers unique properties for radiation detection, including high radiation hardness, very low gamma sensitivity, and fast response. Conventional diamond detectors rely on charge collection, but this approach requires ultra-pure single crystals and suffers from radiation-induced degradation. Here, in this work, we demonstrate an alternative approach using diamonds as scintillators for detection of charged particles and thermal neutrons. Prototypes were fabricated from commercially available diamond powders bonded to glass substrates and coupled with 6 LiF converters and silicon photomultipliers (SiPMs) and conventional PMTs. We characterized their scintillation properties under alpha particle excitation, x-ray photoluminescence, and thermal neutrons. The tryout detectors exhibit strong scintillation light signals, nanosecond-scale response times, and neutron detection efficiencies up to approximately 14 %, evaluated by comparison to conventional 3 He detector with known efficiency. These results demonstrate the feasibility of cost-effective, lightweight and robust diamond scintillation detectors for applications in space and planetary science, nuclear security, safeguards and environmental monitoring requiring efficient, robust, gamma-blind neutron detectors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

The implementation of 5G-and-beyond networks requires faster, high-performance, and power-efficient semiconductor devices, which are only possible with materials that can support higher frequencies. Gallium nitride (GaN) power amplifiers are essential for 5G-and-beyond technologies since they provide the desired combination of high frequency and high power. These applications along with terrestrial hub and backhaul communications at high power output can present severe heat removal challenges. The cooling of GaN devices with diamond as the heat spreader has gained significant momentum since device self-heating limits GaN’s performance. However, one of the significant challenges in integrating polycrystalline diamond on GaN devices is maintaining the device performance while achieving a low diamond/GaN channel thermal boundary resistance. In this study, we achieved a record-low thermal boundary resistance of around 3.1 ± 0.7 m 2 K/GW at the diamond/Si 3 N 4 /GaN interface, which is the closest to theoretical prediction to date. The diamond was integrated within ~1 nm of the GaN channel layer without degrading the channel’s electrical behavior. Furthermore, we successfully minimized the residual stress in the diamond layer, enabling more isotropic polycrystalline diamond growth on GaN with thicknesses >2 μm and a ~1.9 μm lateral grain size. More isotropic grains can spread the heat in both vertical and lateral directions efficiently. Using transient thermoreflectance, the thermal conductivity of the grains was measured to be 638 ± 48 W/m K, which when combined with the record-low thermal boundary resistance makes it a leading-edge achievement.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Kinetic Control on the Depth Distribution of Superdeep Diamonds

Superdeep diamonds contain unique information from the sublithospheric regions of Earth's interior. Recent studies imply that reaction between subducted carbonate and iron metal in the mantle plays an important role in the production of superdeep diamonds. It is unknown if this reaction is kinetically feasible in cold slabs subducted into the deep mantle. In this work we introduce experimental data on real-time tracking of the magnesite-iron reaction at high pressures and high temperatures to demonstrate the production of diamond at the surface conditions of cold slabs in the transition zone and lower mantle. Our data reveal that the diamond production rate has a positive temperature dependence and a negative pressure dependence, and along a slab geotherm it decreases by a factor of three at pressures from 14.4 to 18.4 GPa. This rate reduction provides an explanation for the rarity of superdeep diamonds from the interior of the mantle transition zone.

58 GEOSCIENCES↗
DOE OSTI2013

Diamond as an inert substrate of graphene

Interaction between graphene and semiconducting diamond substrate has been examined with large-scale density functional theory calculations. Clean and hydrogenated diamond (100) and (111) surfaces have been studied. It turns out that weak van der Waals interactions dominate for graphene on all these surfaces. High carrier mobility of graphene is almost not affected, except for a negligible energy gap opening at the Dirac point. No charge transfer between graphene and diamond (100) surfaces is detected, while different charge-transfer complexes are formed between graphene and diamond (111) surfaces, inducing either p-type or n-type doping on graphene. Therefore, diamond can be used as an excellent substrate of graphene, which almost keeps its electronic structures at the same time providing the flexibility of charge doping.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2013

Combined resistive and laser heating technique for in situ radial X-ray diffraction in the diamond anvil cell at high pressure and temperature

To extend the range of high-temperature, high-pressure studies within the diamond anvil cell, a Liermann-type diamond anvil cell with radial diffraction geometry (rDAC) was redesigned and developed for synchrotron X-ray diffraction experiments at beamline 12.2.2 of the Advanced Light Source. The rDAC, equipped with graphite heating arrays, allows simultaneous resistive and laser heating while the material is subjected to high pressure. The goals are both to extend the temperature range of external (resistive) heating and to produce environments with lower temperature gradients in a simultaneously resistive- and laser-heated rDAC. Three different geomaterials were used as pilot samples to calibrate and optimize conditions for combined resistive and laser heating. For example, in Run1, FeO was loaded in a boron-mica gasket and compressed to 11 GPa then gradually resistively heated to 1007 K (1073 K at the diamond side). The laser heating was further applied to FeO to raise temperature to 2273 K. In Run2, Fe-Ni alloy was compressed to 18 GPa and resistively heated to 1785 K (1973 K at the diamond side). The combined resistive and laser heating was successfully performed again on (Mg{sub 0.9}Fe{sub 0.1})O in Run3. In this instance, the sample was loaded in a boron-kapton gasket, compressed to 29 GPa, resistive-heated up to 1007 K (1073 K at the diamond side), and further simultaneously laser-heated to achieve a temperature in excess of 2273 K at the sample position. Diffraction patterns obtained from the experiments were deconvoluted using the Rietveld method and quantified for lattice preferred orientation of each material under extreme conditions and during phase transformation.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Diamonds for beam instrumentation

Diamond is perhaps the most versatile, efficient and radiation tolerant material available for use in beam detectors with a correspondingly wide range of applications in beam instrumentation. Numerous practical applications have demonstrated and exploited the sensitivity of diamond to charged particles, photons and neutrons. In this paper, a brief description of a generic diamond detector is given and the interaction of the CVD diamond detector material with protons, electrons, photons and neutrons is presented. Latest results of the interaction of sCVD diamond with 14 MeV mono-energetic neutrons are shown.

43 PARTICLE ACCELERATORS↗
DOE OSTI2013

Laser-processed three dimensional graphitic electrodes for diamond radiation detectors

We have used an original approach for diamond detectors where three dimensional buried graphitic electrodes are processed in the bulk of a diamond substrate via laser-induced graphitization. Prototype made of polycrystalline chemical vapor deposition diamond was fabricated using a nanosecond UV laser. Its charge collection efficiency was evaluated using α-particles emitted by a 241-Americium source. An improved charge collection efficiency was measured proving that laser micro-machining of diamond is a valid option for the future fabrication of three dimensional diamond detectors.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Surface transfer doping of diamond by MoO{sub 3}: A combined spectroscopic and Hall measurement study

Surface transfer doping of diamond has been demonstrated using MoO{sub 3} as a surface electron acceptor material. Synchrotron-based high resolution photoemission spectroscopy reveals that electrons are transferred from the diamond surface to MoO{sub 3}, leading to the formation of a sub-surface quasi 2-dimensional hole gas within the diamond. Ex-situ electrical characterization demonstrated an increase in hole carrier concentration from 1.00 × 10{sup 13}/cm{sup 2} for the air-exposed hydrogen-terminated diamond surface to 2.16 × 10{sup 13}/cm{sup 2} following MoO{sub 3} deposition. This demonstrates the potential to improve the stability and performance of hydrogen-terminated diamond electronic devices through the incorporation of high electron affinity transition metal oxides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electron microscopic evidence for a tribologically induced phase transformation as the origin of wear in diamond

Tribological testing of a coarse-grained diamond layer, deposited by plasma-enhanced chemical vapor deposition, was performed on a ring-on-ring tribometer with a diamond counterpart. The origin of the wear of diamond and of the low friction coefficient of 0.15 was studied by analyzing the microstructure of worn and unworn regions by transmission and scanning electron microscopy. In the worn regions, the formation of an amorphous carbon layer with a thickness below 100 nm is observed. Electron energy loss spectroscopy of the C-K ionization edge reveals the transition from sp{sup 3}-hybridized C-atoms in crystalline diamond to a high fraction of sp{sup 2}-hybridized C-atoms in the tribo-induced amorphous C-layer within a transition region of less than 5 nm thickness. The mechanically induced phase transformation from diamond to the amorphous phase is found to be highly anisotropic which is clearly seen at a grain boundary, where the thickness of the amorphous layer above the two differently oriented grains abruptly changes.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Creation of deep blue light emitting nitrogen-vacancy center in nanosized diamond

This paper reports on the formation of complex defect centers related to the N3 center in nanosized diamond by employing plasma immersion and focused ion beam implantation methods. He{sup +} ion implantation into nanosized diamond “layer” was performed with the aim of creating carbon atom vacancies in the diamond structure, followed by the introduction of molecular N{sub 2}{sup +} ion and heat treatment in vacuum at 750 °C to initiate vacancy diffusion. To decrease the sp{sup 2} carbon content of nanosized diamond formed during the implantation processes, a further heat treatment at 450 °C in flowing air atmosphere was used. The modification of the bonding properties after each step of defect creation was monitored by Raman scattering measurements. The fluorescence measurements of implanted and annealed nanosized diamond showed the appearance of an intensive and narrow emission band with fine structures at 2.98 eV, 2.83 eV, and 2.71 eV photon energies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Spectroscopic analysis of H{sub 2}/CH{sub 4} microwave plasma and fast growth rate of diamond single crystal

One of the best ways to increase the diamond growth rate is to couple high microwave power to the plasma. Indeed, increasing the power density leads to increase gas temperature the atomic hydrogen density in the plasma bulk, and to produce more hydrogen and methyl at the diamond surface. Experimental and numerical approaches were used to study the microwave plasma under high power densities conditions. Gas temperature was measured by optical emission spectroscopy and H-atom density using actinometry. CH{sub 3}-radical density was obtained using a 1D model that describes temperatures and plasma composition from the substrate to the top of the reactor. The results show that gas temperature in the plasma bulk, atomic hydrogen, and methyl densities at the diamond surface highly increase with the power density. As a consequence, measurements have shown that diamond growth rate also increases. At very high power density, we measured a growth rate of 40 μm/h with an H-atom density of 5 × 10{sup 17} cm{sup −3} which corresponds to a H{sub 2} dissociation rate higher than 50%. Finally, we have shown that the growth rate can be framed between a lower and an upper limit as a function depending only on the maximum of H-atom density measured or calculated in the plasma bulk. The results also demonstrated that increasing fresh CH{sub 4} by an appropriate injection into the boundary layer is a potential way to increase the diamond growth rates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A charge transport study in diamond, surface passivated by high-k dielectric oxides

The recent progress in the growth of high-quality single-crystalline diamond films has sparked interest in the realization of efficient diamond power electronic devices. However, finding a suitable passivation is essential to improve the reliability and electrical performance of devices. In the current work, high-k dielectric materials such as aluminum oxide and hafnium oxide were deposited by atomic layer deposition on intrinsic diamond as a surface passivation layer. The hole transport properties in the diamond films were evaluated and compared to unpassivated films using the lateral time-of-flight technique. An enhancement of the near surface hole mobility in diamond films of up to 27% is observed when using aluminum oxide passivation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effects of hydrogen atoms on surface conductivity of diamond film

To investigate the effects of surface chemisorbed hydrogen atoms and hydrogen atoms in the subsurface region of diamond on surface conductivity, models of hydrogen atoms chemisorbed on diamond with (100) orientation and various concentrations of hydrogen atoms in the subsurface layer of the diamond were built. By using the first-principles method based on density functional theory, the equilibrium geometries and densities of states of the models were studied. The results showed that the surface chemisorbed hydrogen alone could not induce high surface conductivity. In addition, isolated hydrogen atoms in the subsurface layer of the diamond prefer to exist at the bond centre site of the C-C bond. However, such a structure would induce deep localized states, which could not improve the surface conductivity. When the hydrogen concentration increases, the C-H-C-H structure and C-3H{sub bc}-C structure in the subsurface region are more stable than other configurations. The former is not beneficial to the increase of the surface conductivity. However, the latter would induce strong surface states near the Fermi level, which would give rise to high surface conductivity. Thus, a high concentration of subsurface hydrogen atoms in diamond would make significant contributions to surface conductivity.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A novel Mo-W interlayer approach for CVD diamond deposition on steel

Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD) processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42) substrates using a multi-structured molybdenum (Mo) – tungsten (W) interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

36 MATERIALS SCIENCE↗