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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics

We demonstrate the growth of (110) GaAs solar cells by hydride vapor phase epitaxy (HVPE) as an advance towards a (110)-oriented device platform with substrate reuse via spalling. Controlled spalling offers a fracture-based path to substrate amortization, allowing device removal and substrate reuse, but the faceted surface generated in spalling of (100)-GaAs presents hurdles to direct regrowth of subsequent devices. Spalling of (110)-oriented substrates takes advantage of the natural (110) cleavage plane in zinc-blende III-V materials, eliminating this faceting. The vast majority of III-V epitaxy development is on (100)-oriented substrates, but epitaxy is not limited to this orientation. Here, we demonstrate (110)-based GaAs solar cells grown by HVPE with equivalent performance to devices grown on the more standard (100) orientation. We also demonstrate spalling of (110) oriented substrates, revealing surfaces with flat terraces separated by steps. These results provide preliminary evidence of a potentially low-cost path for terrestrial III-V photovoltaics via the (110) substrate orientation.

(110) orientation↗
DOE OSTI2020

Arsenic Doping of Polycrystalline CdSeTe Devices for Microsecond Life-times with High Carrier Concentrations

We report seminal advances in fabrication and understanding of group V (As) doped thin-film polycrystalline CdTe-based solar cells. The devices are fabricated using a novel approach, by sublimating layers of CdSeTe and CdSeTe:As. This new method allowed us to achieve minority carrier lifetime of over 1 μs, carrier concentration of more than 5×l0 15 cc -1 and external radiative efficiency of over 2 % in a device configuration. We find an increase in open-circuit voltage when comparing As-doped, Cu-doped and undoped devices. The choice of CdSeTe instead of a CdTe-only absorber has been explained using first-principle density functional theory model. A SCAPS device model is used to analyze the potential causes for lower open-circuit voltage.

Munshi, Amit H.↗
DOE OSTI2022

Na Diffusion and Device Performance of AgBr Treated CuGaSe 2 Thin Films

Previous work demonstrated that uniform CuGaSe2 (CGS) thin films with large grains could be grown using a short AgBr vapor treatment during growth. Here, devices made with this treated CGS showed better performance compared to devices made with standard material. Here, it is shown that AgBr treated CGS device performance worsens over time and is attributed to the suppression of Na diffusion. A NaF post-deposition treatment is shown to effectively introduce Na into the AgBr treated CGS film and prevent device degradation.

14 SOLAR ENERGY↗
DOE OSTI2020

Characterizing the Stability of NISQ Devices

In this study, we focus on the question of stability of NISQ devices. The parameters that define the device stability profile are motivated by the work of DiVincenzo in [9] where the requirements for physical implementation of quantum computing are discussed. We develop the metrics and theoretical framework to quantify the DiVincenzo requirements and study the stability of those key metrics. The basis of our assessment is histogram similarity (in time and space). For identical experiments, devices which produce reproducible histograms in time, and similar histograms in space, are considered more reliable. To investigate such reliability concerns robustly, we propose a moment-based distance (MBD) metric. We illustrate our methodology using data collected from IBM's Yorktown device. Two types of assessments are discussed: spatial stability and temporal stability.

Dasgupta, Samudra↗
DOE OSTI2022

Adaptive stabilization of quantum circuits executed on unstable devices

Conventional computers have evolved to device components that demonstrate failure rates of 10 −17 or less, while current quantum computing devices typically exhibit error rates of 10 −2 or greater. This raises concerns about the reliability and reproducibility of the results obtained from quantum computers. The problem is highlighted by experimental observation that today’s NISQ devices are inherently unstable. Remote quantum cloud servers typically do not provide users with an ability to calibrate the device themselves. Using inaccurate characterization data for error mitigation can have devastating impact on reproducibility. In this study, we investigate if one can infer the critical channel parameters dynamically from the noisy binary output of the executed quantum circuit and use it to improve program stability. An open question however is how well does this methodology scale. We discuss the efficacy and efficiency of our adaptive algorithm using canonical quantum circuits such as the uniform superposition circuit. Our metric of performance is the Hellinger distance between the post-stabilization observations and the reference (ideal) distribution.

Dasgupta, Samudra↗
DOE OSTI2023

Reliable Devices Yield Stable Quantum Computations

Stable quantum computation requires noisy results to remain bounded even in the presence of noise fluctuations. Yet non-stationary noise processes lead to drift in the varying characteristics of a quantum device that can greatly influence the circuit outcomes. Here we address how temporal and spatial variations in noise relate device reliability to quantum computing stability. First, our approach quantifies the differences in statistical distributions of characterization metrics collected at different times and locations using Hellinger distance. We then validate an analytical bound that relates this distance directly to the stability of a computed expectation value. Our demonstration uses numerical simulations with models informed by the washington superconducting transmon device. We find that the stability metric is consistently bounded from above by the corresponding Hellinger distance, which can be cast as a specified tolerance level. These results underscore the significance of reliable quantum computing devices and the impact for stable quantum computation.

Dasgupta, Samudra↗
DOE OSTI2023

Data for Construction of a Compact Array of Microplasma Jet Devices and Its Application for Random Mutagenesis of Rhodosporidium toruloides

A small and efficient DNA mutation-inducing machine was constructed with an array of microplasma jet devices (7 × 1) that can be operated at atmospheric pressure for microbial mutagenesis. Using this machine, we report disruption of a plasmid DNA and generation of mutants of an oleaginous yeast Rhodosporidium toruloides . Specifically, a compact-sized microplasma channel (25 × 20 × 2 mm3) capable of generating an electron density of greater than 1013 cm–3 was constructed to produce reactive species (N2*, N2+, O, OH, and Hα) under helium atmospheric conditions to induce DNA mutagenesis. The length of microplasma channels in the device played a critical role in augmenting both the volume of plasma and the concentration of reactive species. First, we confirmed that microplasma treatment can linearize a plasmid by creating nicks in vitro. Second, we treated R. toruloides cells with a jet device containing 7 microchannels for 5 min; 94.8% of the treated cells were killed, and 0.44% of surviving cells showed different colony colors as compared to their parental colony. Microplasma-based DNA mutation is energy-efficient and can be a safe alternative for inducing mutations compared to conventional methods using toxic mutagens. This compact and scalable device is amenable for industrial strain improvement involving large-scale mutagenesis.

Conversion↗
DOE OSTI2023

Fabrication-robust silicon photonic devices in standard sub-micron silicon-on-insulator processes

Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms; this includes the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such variations are particularly troublesome for phase-sensitive devices, such as interferometers and resonators, which exhibit drastic changes in performance as a result of these fabrication-induced phase errors. In this Letter, we propose and experimentally demonstrate a design methodology for dramatically reducing device sensitivity to silicon width variations. We apply this methodology to a highly phase-sensitive device, the ring-assisted Mach–Zehnder interferometer (RAMZI), and show comparable performance and footprint to state-of-the-art devices, while substantially reducing stochastic phase errors from etch variations. This decrease in sensitivity is directly realized as energy savings by significantly reducing the required corrective thermal tuning power, providing a promising path toward ultra-energy-efficient large-scale silicon photonic circuits.

Rizzo, Anthony (ORCID:000000034752797X)↗
DOE OSTI2020

Disorder effects in nitride semiconductors: impact on fundamental and device properties

Abstract Semiconductor structures used for fundamental or device applications most often incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or InGaAlAs material systems, the effects of compositional disorder on the electronic properties can be treated in a perturbative approach. This is not the case in the more recent nitride-based GaInAlN alloys, where the potential changes associated with the various atoms induce strong localization effects, which cannot be described perturbatively. Since the early studies of these materials and devices, disorder effects have indeed been identified to play a major role in their properties. Although many studies have been performed on the structural characterization of materials, on intrinsic electronic localization properties, and on the impact of disorder on device operation, there are still many open questions on all these topics. Taking disorder into account also leads to unmanageable problems in simulations. As a prerequisite to address material and device simulations, a critical examination of experiments must be considered to ensure that one measures intrinsic parameters as these materials are difficult to grow with low defect densities. A specific property of nitride semiconductors that can obscure intrinsic properties is the strong spontaneous and piezoelectric fields. We outline in this review the remaining challenges faced when attempting to fully describe nitride-based material systems, taking the examples of LEDs. The objectives of a better understanding of disorder phenomena are to explain the hidden phenomena often forcing one to use ad hoc parameters, or additional poorly defined concepts, to make simulations agree with experiments. Finally, we describe a novel simulation tool based on a mathematical breakthrough to solve the Schrödinger equation in disordered potentials that facilitates 3D simulations that include alloy disorder.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Numerical Model of IProTech PIP WEC Device

iProTech PIP wave energy converter (WEC) is a slack moored, single hull device with no moving parts in the water, joints or bearings. This submission includes data of the simulation, reports, and code for the iProTech PIP (WEC) project. The organization of the data included in the provided archive is detailed below and in the data description of the archive. The data teamer-iprotech-nrel folder includes and explains matlab and python code developed to hydrodynamically model the PIP WEC device in WEC-Sim. The subfolders cover the following steps: 1) report: explanatory information on device geometry 2) pip_mesher: python code to generate mesh panels from device profile data 3) wec-sim_models: matlab code to run WEC-Sim The data uploaded is a snapshot as of 11/02/2121 of code residing in a Github repository administered by David Ogden of NREL.

16 TIDAL AND WAVE POWER↗
DOE OSTI2023

MASK4 Test Campaign for Sandia WaveBot Device

This data and report details the findings from a wave tank test focused on production of useful work of a wave energy converter (WEC) device. The experimental system and test were specifically designed to validate models for power transmission throughout the WEC system. Additionally, the validity of co-design informed changes to the power take-off (PTO) were assessed and shown to provide the expected improvements in system performance. These data describe the "MASK4" wave tank test of the Sandia WaveBot device. The WaveBot device has been tested a number of times in different permutations at the US Navy's Maneuvering and Sea Keeping (MASK) basin. Each test in this series is referred to as MASK1, MASK2, etc. The WaveBot device was first tested in one degree of freedom (heave) in 2016. This MASK1 test focused primarily on system identification and modeling. After MASK1, major modifications were performed to improve the overall real-time control and measurement system, improve the heave drive train, and add surge and pitch degrees of freedom. The second set of testing, which was broken up in to two stages: MASK2A and MASK2B, focused on bench testing and closed-loop control performance as well as nonlinear modeling. MASK3 then focused on multi-input, multi-output modeling and control for maximization of electrical power. The attached report presents the results from MASK4, which focuses on detailed modeling of the power conversion chain and validation co-design principles by way of the introduction of a magnetic spring. The test log, report, and data from the MASK4 test of the WaveBot augmented with a tunable magnetic spring. Processing codes can be found at the Github link below.

16 TIDAL AND WAVE POWER↗
DOE OSTI2020

2020 State of the Science Report, Chapter 6: Changes in Benthic and Pelagic Habitats Caused by Marine Renewable Energy Devices

Most marine renewable energy (MRE) devices must be attached to the seafloor in some way, either through gravity foundations, pilings, or anchors, and with mooring lines, transmission cables, and devices themselves in the water column. Physical changes in benthic and pelagic habitats have the potential to alter species occurrence or abundance at a localized scale, lead to some level of habitat loss, provide opportunities for colonization by non-native species, alter patterns of ecological succession, modify ecosystem functioning, and affect behavioral responses of marine organisms. The transformation of the seafloor and/or water column habitat to new hard substratum because of the presence of the MRE devices may also lead to artificial reef effects or changes in animal behavior. While there is no indication that MRE devices affect marine habitats differently than other structures currently and historically placed in the ocean, regulators and stakeholders may continue to have concerns. https://tethys.pnnl.gov/publications/state-of-the-science-2020-chapter-6-habitat-changes

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2020

2020 State of the Science Report, Chapter 8: Encounters of Marine Animals with Marine Renewable Energy Device Mooring Systems and Subsea Cables

Many marine renewable energy (MRE) technologies, including floating or midwater wave and tidal devices, require mooring systems (i.e., mooring lines and anchors) to maintain their position within the water column or on the sea surface. In the case of some devices such as tidal kites, these lines and cables can be highly dynamic. An array of non-bottom-mounted devices may also include transmission cables within the water column interconnecting devices to one another, or to offshore substations or hubs on the seabed. The potential for these lines and cables to present hazards for marine animals that may become entangled or entrapped in them, or confused by their presence remains an issue of uncertainty. The degree to which mitigation to avoid or reduce entanglement risk might be required for future MRE installations is yet to be determined, pending greater understanding of the actual nature of the risk. In this chapter, the entanglement or entrapment of a marine animal is defined as the cause to become caught in a system without possibility of escaping. https://tethys.pnnl.gov/publications/state-of-the-science-2020-chapter-8-moorings

16 TIDAL AND WAVE POWER↗
DOE OSTI2020

The Rise in the Utilization of IoT Devices in Nuclear Facilities

The term Internet of Things (loT) encompasses everything connected to the internet, but it is increasingly being used to define objects that "talk" to each other. A broader term is that loT are the devices that connect to each other and to the internet. It has been mentioned that loT offers the potential for a "Forth industrial revolution" (1). This is primally because of the ease of use and quick link-up of devices within an area. This poses options for great interactivity but also create security concerns as many of these devices may not have been vetted for industrial use. By allowing for the intercommunication of these devices and combining with automated systems, we can now gather information, provide analysis and create automotive actions. This allows for faster response times as well as lowering the overall cost for operations in nuclear power facilities. (2)

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2021

Demonstration and Validation of Additively Manufactured Intensified Device for Enhanced Carbon Capture

In FY 2018 and 2019, ORNL personnel designed, prototyped, characterized, and tested the enhancement of amine-based carbon capture using additively manufactured intensified devices, i.e., devices combining multiple thermodynamic and kinetic processes into one unit operation. State of the art scrubbing technology often employs inter-stage cooling which requires multiple stages of single-purpose unit operations, leading to larger equipment size, higher capital cost, and sometimes less than optimal operating conditions for each piece of equipment. It was proposed that integrating multiple thermodynamic and kinetic operations into one unit could mitigate or negate these drawbacks. Heat and mass transfer studies demonstrated that an additively manufactured intensified device could significantly improve capture efficiency at bench scale. This project is a continuation of FEAA130 and aims at (1) demonstration and validation of enhanced CO 2 capture with 3D printed intensified devices (i.e., mass exchanger packing with internal cooling channels), for low-aqueous-solvent (LAS) based capture at the ORNL-constructed laboratory-scale (4.5-feet tall) column, namely Column A, with built-in cooling and (2) computational scoping on the conceptual design of a flexible and modular larger column, namely Column B, at ORNL for further demonstration of enhanced capture for aqueous solvent. To execute this multi-faceted project scope, an integrated project team from ORNL’s Manufacturing Science Division is tasked with applying capabilities in computational fluid dynamics (CFD), additive manufacturing, and absorber-scale demonstration/validation experiments.

42 ENGINEERING↗
DOE OSTI2021

Cybersecurity Certification Recommendations for Interconnected Grid Edge Devices and Inverter Based Resources

Escalating deployment of PV and grid-edge devices on the distribution grid has increased the sustainability and efficiency of the electric grid. However, the increasing number of distributed energy resources (DERs) deployed creates a heightened cyber-physical interdependency on the distribution grid and thus creates more vectors for cyber-attacks to exploit through information and communication technology (ICT) systems and networks. For example, control signal packets can be modified, intercepted, or corrupted due to vulnerabilities in communication protocols used by microgrid controllers and grid edge devices for power control. Therefore, to mitigate and prevent cyber-attacks on grid edge devices and the inverter-based resources connected to the distribution grid, the U.S. Department of Solar Energy Technologies Office (SETO) awarded funding to the National Renewable Energy Laboratory and Sandia National Laboratory (SNL) to research, develop, and harmonize cybersecurity standards for Photovoltaic (PV) systems and for other kinds of DERs. To help develop a standard for DER cybersecurity, NREL established certification recommendations and test cases, in consensus with the solar industry and UL, for ensuring intrinsic design security for DERs. These recommendations were developed to bolster the cybersecure functionalities such as TLS, MAC, CRL, session resumption/renegotiation, and password, system, and service security management within the DER devices. The proposed test cases verify authentication, authorization, confidentiality, and data integrity for data and communications of DERs that use Transmission Control Protocol/Internet Protocol (TCP/IP). They were also developed to protect DER communications from eavesdropping, replay, man-in-the-middle, denial of service (DoS), spoofing through security certificates, least-privilege violation, and brute-force credentials. This report, which has been validated and reviewed by UL, expands upon those test cases to provide DER cybersecurity certification recommendations which increase DER resiliency and help to mitigate cyber-attacks. UL's collaboration with NREL and approval of this document will accelerate the adoption of a UL standard for DER cybersecurity.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Cross-Cutting Metrology Tools for In Operando Characterization of Carrier Dynamics in Photovoltaic Devices (Final Technical Report)

Understanding the nature of recombination and its dependence on defects and interfaces is essential for engineering materials and contacts for higher V oc and photovoltaic (PV) efficiency. Time-resolved photoluminescence (TRPL) has conventionally been used to evaluate recombination, but not all materials are strongly emissive or otherwise suitable. Time-resolved terahertz spectroscopy is a pump – probe method that presents valuable complementary information, wherein an optical pump pulse photoexcites carriers within the absorber and the transient photoconductivity is probed with a terahertz pulse. Until now, experimental constraints have prohibited the use of terahertz probes to interrogate full device stacks, and measurements were instead made on exfoliated films or films grown on unconventional substrates. However, interfaces are critical to the behavior of photoexcited carriers in solar cells, and the substrates themselves often influence the film growth and bulk properties. Therefore, it is important to probe the behavior of PV absorbers as close as possible to their normal operating conditions. Here we have developed cross-cutting metrology that enable in operando characterization of carrier dynamics and recombination mechanisms in working PV devices. Through a combination of complementary non-contact TRTS and TRPL experiments and modeling, we have obtained key parameters including photoexcited carrier bulk lifetime and interface and back surface recombination velocities with greater precision and accuracy than can be achieved with conventional TRPL alone. By varying pulsed photoexcitation conditions, the contributions of interface and bulk recombination mechanisms can be determined. We have developed and refined this characterization approach by investigating CdTe PVs, which is a well-established technology but with significant margin for further improvements in efficiency. Results were published in Journal of Applied Physics (DOI: 10.1063/5.0064730) and Proceedings of the IEEE PVSC (DOI: 10.1109/PVSC43889.2021.9518559). After validating the approach, we have applied it to correlate recombination rates to processing conditions and material properties, including composition and defects as well as interfaces and surface treatments. Such feedback can inform processing and design choices to enable higher PV efficiency, not only for CdTe, but also CdSe x Te 1-x , CIGS, perovskites, kesterites, and future technologies. A perspective on predicting solar cell performance from terahertz spectroscopy was published in Advanced Energy Materials (DOI: 10.1002/aenm.202102776). The cross-cutting metrology tools developed here will enable determination of the locus and mechanism of performance-limiting recombination in thin film PV devices. This feedback can guide the engineering of PV devices with higher V oc and efficiency, thereby leading to reductions in levelized cost of electricity to meet the SunShot 2030 target of $0.03/kWh for utility-scale PV. Lower costs will enable rapid expansion of renewable electricity generation that is nearly free of carbon emissions. Reducing carbon emissions of the electricity sector is one of the most important solutions to climate change. The project’s specific focus on CdTe PV can benefit First Solar, the US company that is the global leader in CdTe technology, through both technology and workforce development.

14 SOLAR ENERGY↗
DOE OSTI2024

A Scalable & Non-Destructive Characterization Strategy to Study Semiconductor/Dielectric Interfaces and Predict Wafer-Level Device Performance

The defect density present at the dielectric-semiconductor interface in an MOS structure directly influences the channel carrier characteristics in semiconductor devices, especially in wide bandgap material systems used in power devices. While these trap defects are typically quantified through electrical characterization of MOS-capacitor test structures, this treatment offers very little insight into the physical nature of interface defects. Such shortcomings demand a physical characterization strategy to guide fabrication optimization. X-ray photoelectron spectroscopy (XPS) is suggested as a viable technique to determine chemical data for dielectric interfaces formed using atomic layer deposition (ALD) on GaN substrates. Previously, 1-D XPS characterization has confirmed the presence of a Ga x O y interlayer between ALD dielectrics and the GaN substrate. In this work, XPS data is serially collected to form 2-D images of an ALD-Al 2 O 3 /GaN interface as a proof-of-concept experiment for in-situ XPS quality monitoring during ALD processing. The information provided by this work reveals some of the challenges for incorporating XPS characterization as an in-situ strategy during fabrication of GaN-based devices. Separately, electrical mapping of a 2-D array of ALD-Al 2 O 3 /GaN MOS-capacitor devices provide a means to quantify the spatial variations in interface quality across a single wafer. Physical characterization techniques, such as time-of-flight secondary ion mass spectroscopy, provide additional chemical information about the Al 2 O 3 /Ga x O y /GaN structure that complement the electrical mapping results. This analysis shows that a higher Ga x O y content correlates with higher interface state defects for trap energies deep in the band gap.

42 ENGINEERING↗