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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16

Forward-bias capacitance and current measurements for determining lifetimes and band narrowing in p-n junction solar cells

A new method is described and illustrated for determining the minority-carrier diffusion length and lifetime in the base region of p-n junction solar cells. The method requires only capacitance measurements at the device terminals and its accuracy is estimated to be + or - 5%. It is applied to a set of silicon p-n junction devices and the values of the diffusion lengths agree with those obtained using the current response to X-ray excitation but disagree with those obtained by the OCVD method. The reasons for the relative inaccuracy of OCVD applied to silicon devices are discussed. The capacitance method includes corrections for a two-dimensional fringing effects which occur in small area devices. For a device having highly-doped base region and surface (emitter) layer, the method can be extended to enable the determination of material properties of the degenerately doped surface layer. These material properties include the phenomenological emitter lifetime and a measure of the energy band-gap narrowing in the emitter. An alternate method for determining the energy band-gap narrowing from temperature dependence of emitter current is discussed and demonstrated.

Neugroschel, A.↗

Unraveling the advances of trace doping engineering for potassium ion battery anodes via tomography

Doping have been considered as a prominent strategy to stabilize crystal structure of battery materials during the insertion and removal of alkali ions. The instructive knowledge and experience acquired from doping strategies predominate in cathode materials, but doping principle in anodes remains unclear. Here, we demonstrate that trace element doping enables stable conversion-reaction and ensures structural integrity for potassium ion battery (PIB) anodes. With a synergistic combination of X-ray tomography, structural probes, and charge reconfiguration, we encode the physical origins and structural evolution of electro-chemo-mechanical degradation in PIB anodes. By the multiple ion transport pathways created by the orderly hierarchical pores from “surface to bulk” and the homogeneous charge distribution governed in doped nanodomains, the anisotropic expansion can be significantly relieved with trace isoelectronic element doping into the host lattice, maintaining particle mechanical integrity. Our work presents a close relationship between doping chemistry and mechanical reliability, projecting a new pathway to reengineering electrode materials for next-generation energy storage.

25 ENERGY STORAGE↗

Structural and Electrochemical Impacts of Mg/Mn Dual Dopants on the LiNiO 2 Cathode in Li-Metal Batteries

Doping chemistry has been regarded as an efficient strategy to overcome some fundamental challenges facing the “no-cobalt” LiNiO 2 cathode materials. By utilizing the doping chemistry, we evaluate the battery performance and structural/chemical reversibility of a new no-cobalt cathode material (Mg/Mn-LiNiO 2 ). The unique dual dopants drive Mg and Mn to occupy the Li site and Ni site, respectively. We report the Mg/Mn-LiNiO 2 cathode delivers smooth voltage profiles, enhanced structural stability, elevated self-discharge resistance, and inhibited nickel dissolution. As a result, the Mg/Mn-LiNiO 2 cathode enables improved cycling stability in lithium metal batteries with the conventional carbonate electrolyte: 80% capacity retention after 350 cycles at C /3, and 67% capacity retention after 500 cycles at 2 C (22 °C). We then take the Mg/Mn-LiNiO 2 as the platform to investigate the local structural and chemical reversibility, where we identify that the irreversibility takes place starting from the very first cycle. The highly reactive surface induces the surface oxygen loss, metal reduction reaching the subsurface, and metal dissolution. Our data demonstrate that the dual dopants can, to some degree, mitigate the irreversibility and improve the cycling stability of LiNiO 2 , but more efforts are needed to eliminate the key challenges of these materials for battery operation in the conventional carbonate electrolyte.

25 ENERGY STORAGE↗

How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration

The 3D integration technology in semiconductor fabrication requires a key component, the ovonic threshold switching (OTS) selector, to suppress the current leakage. The As doped amorphous (a-) GeSe glass is a commercialized OTS material in 3D phase-change memory, but the understanding of such a doping mechanism is still inadequate. Here we systematically explore the effect of As doping on the structural, bonding, and dynamics properties of a-GeAsSe using ab initio molecular dynamics simulations. The results reveal that As atoms form strong bonds with both Ge and Se atoms. The distorted octahedral structures and the 5-fold rings linked by atoms are increased. All of these structural features lead to a more disordered configuration. Moreover, as atoms have notably slowed down the atomic mobility, rendering a-GeAsSe a high stability. Overall, our studies offer insightful understanding of As-doping in OTS materials, paving the way for the design and application of advanced selector devices.

36 MATERIALS SCIENCE↗

Luminescence Quenching via Deep Defect States: A Recombination Pathway via Oxygen Vacancies in Ce-Doped YAG

Luminescence quenching via nonradiative recombination channels limits the efficiency of optical materials such as phosphors and scintillators and therefore has implications for conversion efficiency and device lifetimes. In materials such as Ce-doped yttrium aluminum garnet (YAG:Ce), quenching shows strong dependence on both temperature and activator concentration, limiting the fabrication of high-intensity white-light emitting diodes with high operating temperatures. Here, we reveal by means of first-principles calculations an efficient recombination mechanism in YAG:Ce that involves oxygen vacancies and gives rise to thermally activated concentration quenching. We demonstrate that the key requirements for this mechanism to be active are localized states with strong electron-phonon coupling. These conditions are commonly found for intrinsic defects such as anion vacancies in wide band gap materials. The present findings are therefore relevant to a broad class of optical materials and shine light on thermal quenching mechanisms in general.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The Role and Substitution of Cobalt in the Cobalt‐Lean/Free Nickel‐Based Layered Transition Metal Oxides for Lithium Ion Batteries

Here, the Nickel-based layered transition metal oxide cathode represented by NCM (LiNi x Co y Mn z O 2 , x+y+z=1) and NCA (LiNi x Co y Al z O 2 , x+y+z=1) is widely used in the electric vehicle market due to its specific capacity and high working potential, in which Cobalt (Co) plays a huge role in improving the structural stability during the cycle. However, the limited supply of Co, due to its scarcity and the influence of geopolitics, poses a significant constraint on the further advancement of the Nickel-based layered transition metal oxide cathode in the field of energy storage. In this paper, the mechanism of Co in the Nickel-based layered transition metal oxides is reviewed, including its critical role for structural stability such as the inhibition of cationic mixing and the release of lattice oxygen et al. Subsequently, it outlines various strategies to enhance the performance of Co-lean/free materials, such as ion doping, including single-ion doping and multi-ion co-doping, and various surface coating strategies, so as to eliminate the adverse effects of Co loss on materials. Ultimately, this paper offers a glimpse into the promising future of Cobalt-free strategies for high performance of Nickel-based layered transition metal oxides.

25 ENERGY STORAGE↗

Electron Spin Polarization in Large Electric Fields

This project investigated the effects of large electric fields on electron spin polarization in semiconductors, which is of interest for spin-based electronics (“spintronics”) and quantum information processing. It has been theoretically proposed that large electric fields could potentially preserve or amplify electron spin polarization, which would make it easier to generate, transport, and detect spin polarization in spin-based devices; however, previous measurements had not measured the response of electron spin polarization at large electric fields. During this project, methods to perform measurements of electron spin polarization at large electric fields were developed and performed using ultrafast time- and spatially-resolved magneto-optical spectroscopy, high-voltage pulses, and lock-in detection. The device geometry was engineered to reduce the threshold voltage required to reach the Gunn threshold, and the effect of optical illumination on the sample conductivity and Gunn oscillations was investigated. Electron spin polarization measurements were performed at electric fields up to and beyond the Gunn threshold for the device. The measurements showed that the electron spin polarization magnitude decreased with increasing electric field in the devices measured, and a spin amplification effect was not observed. However, these effects could potentially exist in a different material or in a material with a different doping concentration or in a different device geometry.

36 MATERIALS SCIENCE↗

Effects of Sn substitution in SrRuO 3 epitaxial films

Epitaxial SrRu 1–x Sn x O 3 (0 ≤ x ≤ 1) thin films were deposited on SrTiO 3 (001) substrates by sequential two-target synthesis using pulsed laser deposition to achieve stable phases in this family of quaternary perovskites. The SrRu 1–x Sn x O 3 films exhibit a good crystalline quality, a sharp interface between film and substrate, and an atomically smooth surface. A gradual expansion of the c-axis lattice parameter was observed with Sn doping serving as a means to tune chemical pressure and magnetism. With an increase in Sn doping, the resistivity of the film increased, and the ferromagnetism decreased. These results illustrate use of lattice engineering, e.g., tuning of c-axis lattice parameter with chemical doping, to control electronic and magnetic properties of epitaxial thin films for applications in oxide electronics.

36 MATERIALS SCIENCE↗

Computational search for itinerant n -type and p -type magnetic semiconductors: Arsenopyrites as bipolar magnetic semiconductors

We report a computational search for three-dimensional bulk ferromagnetic semiconductors based on itinerant Stoner physics. Stoner-based ferromagnetic semiconductors require an unusual combination of high band edge density of states and moderate transport effective mass. Nonetheless, several potential materials are found. Here, we identify arsenopyrites, exemplified by FeAsS, as materials that, with suitable doping, exhibit ferromagnetic semiconducting behavior for both n- and p-type dopants. The existence of a material that becomes ferromagnetic for both p and n types may enable device concepts, for example, ferromagnetic p–n junction devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Material to separate and pump oxygen

A material for separating and pumping oxygen is disclosed. The material is a zeolite doped with a chemical element having an electron density of between 30 kJ/mol and 150 kJ/mol. The material is configured for controllable oxygen desorption between 150° C. and 300° C. and pumping the released oxygen into an area having an ambient pressure of less than 100 pascals.

Wilson, Steven↗

Ionothermally Synthesized Nanoporous Ti 0.95 W 0.05 Nb 2 O 7 : a Novel Anode Material for High-Performance Lithium-Ion Batteries

Although TiNb 2 O 7 is regarded as a fast-rechargeable lithium-ion battery (LIB) anode material, the intrinsic poor electrochemical kinetics of TiNb 2 O 7 still dramatically impedes its development. Herein, an ionothermal synthesis-assisted doping strategy is proposed for the preparation of a new W 6+ -doped TiNb 2 O 7 material (Ti 0.95 W 0.05 Nb 2 O 7 ) with nanoporous structure (denoted as NPTWNO). The improved Li + diffusion coefficient of NPTWNO suggests that the ionic-liquid-templated nanoporous architecture improves the Li+ diffusion kinetics. The density functional theory computational study reveals that the doped W 6+ successfully boosts the electronic conductivity due to the narrowed conduction-valance bandgap resulted from charge redistribution, which is reflected by the electrochemical impedance spectroscopy data. With the simultaneously enhanced Li+ diffusivity and electronic conductivity, NPTWNO achieves fast-rechargeability in LIBs. So this work indicates the potential of ionothermal synthesis-assisted doping strategy on energy storage materials and offers NPTWNO material with promising electrochemical performance.

25 ENERGY STORAGE↗

n–Doping of a Low–Electron–Affinity Polymer Used as an Electron–Transport Layer in Organic Light–Emitting Diodes

n-Doping electron-transport layers (ETLs) increases their conductivity and improves electron injection into organic light-emitting diodes (OLEDs). Because of the low electron affinity and large bandgaps of ETLs used in green and blue OLEDs, n-doping has been notoriously more difficult for these materials. In this work, n-doping of the polymer poly[(9,9-dioctylfluorene-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,7-diyl)] (F8BT) is demonstrated via solution processing, using the air-stable n-dopant (pentamethylcyclopentadienyl)(1,3,5-trimethylbenzene)ruthenium dimer [RuCp*Mes] 2 . Undoped and doped F8BT films are characterized using ultraviolet and inverse photoelectron spectroscopy. The ionization energy and electron affinity of the undoped F8BT are found to be 5.8 and 2.8 eV, respectively. Upon doping F8BT with [RuCp*Mes] 2 , the Fermi level shifts to within 0.25 eV of the F8BT lowest unoccupied molecular orbital, which is indicative of n-doping. Conductivity measurements reveal a four orders of magnitude increase in the conductivity upon doping and irradiation with ultraviolet light. Here, the [RuCp*Mes] 2 -doped F8BT films are incorporated as an ETL into phosphorescent green OLEDs, and the luminance is improved by three orders of magnitude when compared to identical devices with an undoped F8BT ETL.

36 MATERIALS SCIENCE↗

Path Integral Monte Carlo Simulations of Iron Plasmas (Final Technical Report)

This documents is the final technical report for our grant entitled "Path Integral Monte Carlo Simulations of Iron Plasmas" that focused on developing path integral Monte Carlo (PIMC) computer simulations. This techniques will be developed to study plasmas composed of heavier elements including iron and other third row elements. Equations of state (EOS) and transport properties will be derived in the regime of warm dense matter (WDM) and dense plasmas where existing first-principles methods cannot be applied. While standard density functional theory (DFT) has been used to accurately predict the structure of many solids and liquids up to temperatures on the order of 100,000 K, this method is not applicable at much higher temperature because the number of partially occupied electronic orbitals reaches intractably large numbers or the use of finite-temperature free energy functionals in orbital-free DFT introduces an uncontrolled approximation. Here we focus on PIMC methods that become more and more efficient with increasing temperatures and still include all electronic correlation effects. In this approach, electronic excitations increase the efficiency rather than reduce it. While it had commonly been assumed this method could only be applied to elements without core electrons, we showed that PIMC with free-particle nodes works well for first-row elements (PRL 108 (2012) 115502). Most recently, we extended the applicability range of all-electron PIMC to second-row elements by adopting localized nodal surfaces (PRL 115 (2015) 176403). To simulate third-row elements efficiently under WDM conditions, we propose a new method to remove core electrons by introducing pseudo-nodes. We explain our approach step by step and present preliminary results. We focus our method development on getting PIMC simulations of iron to work because of its fundamental importance for WDM and astrophysics. Then we move on to krypton and copper-doped beryllium, a ICF ablator material. We plan to continue working on key second-row material such as Na, Mg, MgO, Al, silica, and silicon-doped plastic ablators. Our collaborators at LLNL, will use our PIMC EOS data both as comparisons to existing semi-empirical, EOS-generating schemes, and as input for continuum radiation hydrodynamics simulations. We will establish an efficient pipeline from PIMC to macroscopic continuum studies of materials response. An emphasis will be placed on benchmarking such methods for plasmas of heavy elements at the very high temperatures (~100 eV) and low densities that are generated when Hohlraum radiation heats the ablator material in indirect drive laser experiments. Results from changes to the EOS will be of immeasurable importance to the designers at the National Ignition Facility (NIF) and at other facilities. Starting with our EOS of Cu-doped Be, our second collaborator at LLE, will perform real-time simulations of laser fusion experiments at the Omega laser and at the NIF to determine how sensitive the compression path depends on the ablator EOS. Since our collaborator also has experience in performing orbital-free DFT calculations, we propose to compare predictions from this method with PIMC results. In joint publications, we plan to analyze the accuracy of different free-energy functionals in order to understand why existing orbital-free DFT calculations do not predict compression peaks along the shock Hugoniot curve that we see with PIMC. The peaks are caused by the ionization of various electron shells. Their accurate characterization is important to compare with experimental results. We will break new ground by developing PIMC techniques that can simulate iron and all other third row elements in the plasma and WDM regimes. We introduce the concept of pseudo-nodes for the efficient treatment of the core-electrons. The EOS and transport properties will be derived and published online in the form of a new WDM database. Our PIMC EOS calculations will benchmark and possibly replace semi-analytical EOS tables like QEOS or SESAME, which will impact the hydrocode simulation community and will affect the design of NIF targets. Our PIMC results will help to improve the accuracy of orbital-free DFT simulations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Controlling magnetostructural transition and magnetocaloric effect in multi-component transition-metal-based materials

Proper coupling between structural and magnetic transitions is critical for the emergence and control of magnetocaloric effects in solids. We examine the influence of minor substitutional doping (replacing Mn by Cr and Al by Sn) and interstitial doping with B on the magnetic, structural, and magnetocaloric properties of recently discovered Mn 0.5 Fe 0.5 NiSi 0.94 Al 0.06 alloy exhibiting a giant magnetocaloric effect near room temperature. We demonstrate that magnetocaloric properties of the base compound can be controlled and, in some cases, improved by chemical substitutions. First-principles computations elucidate how small changes in the composition affect properties in this family of compounds and, thus, provide useful guidance for the selection of suitable doping elements for such materials. Here the magnetic-field-induced entropy change measured for Mn 0.5 Fe 0.5 NiSi 0.94 Al 0.06 B 0.005 is –22 J/kg K near room temperature for the applied magnetic field of 2 T, and it is among the highest known values for this class of materials.

36 MATERIALS SCIENCE↗

Optical storage in lithium niobate

Holographic storage and retrieval using photorefractive media (electro-optic ferroelectric materials), particularly iron-doped lithium niobate with its enhanced sensitivity, are discussed. Refractive index changes induced by exposure to light render the materials useful for read-write memories and read-write memory simulation. Resolution, dark storage time, write and erase times, reversibility, and noise levels of the materials are examined. The laser source, deflection system, hololens, page composer, and detector array of the holographic memory system are described. High SNR and two orders of magnitude improvement in speed are reported over earlier experimental prototypes, but the system is still too slow to meet practical needs.

Alphonse, G. A.↗

High-throughput printing of combinatorial materials from aerosols

The development of new materials and their compositional and microstructural optimization are essential in regard to next-generation technologies such as clean energy and environmental sustainability. However, materials discovery and optimization have been a frustratingly slow process. The Edisonian trial-and-error process is time consuming and resource inefficient, particularly when contrasted with vast materials design spaces 1 . Whereas traditional combinatorial deposition methods can generate material libraries 2,3 , these suffer from limited material options and inability to leverage major breakthroughs in nanomaterial synthesis. Here we report a high-throughput combinatorial printing method capable of fabricating materials with compositional gradients at microscale spatial resolution. In situ mixing and printing in the aerosol phase allows instantaneous tuning of the mixing ratio of a broad range of materials on the fly, which is an important feature unobtainable in conventional multimaterials printing using feedstocks in liquid–liquid or solid–solid phases 4–6 . We demonstrate a variety of high-throughput printing strategies and applications in combinatorial doping, functional grading and chemical reaction, enabling materials exploration of doped chalcogenides and compositionally graded materials with gradient properties. The ability to combine the top-down design freedom of additive manufacturing with bottom-up control over local material compositions promises the development of compositionally complex materials inaccessible via conventional manufacturing approaches.

36 MATERIALS SCIENCE↗