The signs of fluorine-phosphorus coupling constants
Signs of phosphorus-fluorine nuclear resonance spin-spin coupling constants
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Signs of phosphorus-fluorine nuclear resonance spin-spin coupling constants
A new design of an active antenna with a dielectric resonator stabilized high electron mobility transistor (HEMT) oscillator (DRO) and an aperture-coupled patch antenna is reported. The circuit is fabricated using coplanar waveguide (CPW) with the oscillator and the antenna on opposite sides of the substrate. The active antenna was demonstrated at 7.6 GHz; however, the design can be scaled to higher frequencies. Excellent oscillator characteristics and radiation patterns were obtained.
Spectroscopic interrogation of materials in the midinfrared with nanometer spatial resolution is inherently difficult due to the long wavelengths involved, reduced detector efficiencies, and limited availability of spectrally bright, coherent light sources. Technological advances are driving techniques that overcome these challenges, enabling material characterization in this relatively unexplored spectral regime. Synchrotron infrared nanospectroscopy (SINS) is an imaging technique that provides local sample information of nanoscale target specimens in an experimental energy window between 330 and 5000 cm -1 . Here, using SINS, we analyzed a series of individual gold nanorods patterned on a SiO 2 substrate and on a flake of hexagonal boron nitride. The SINS spectra reveal interactions between the nanorod photonic Fabry-Pérot resonances and the surface phonon polaritons of each substrate, which are characterized as avoided crossings. A coupled oscillator model of the hybrid system provides a deeper understanding of the coupling and provides a theoretical framework for future exploration.
An approach to the analysis of closely spaced resonances produced by a microstrip coupled dielectric resonator is presented. In particular, it is shown that the use of a lumped-element model significantly simplifies the analysis. An experimental verification demonstrates that the model predicts the adjacent complementary resonances to within 1.6 percent of the measured value.
Nitrogen vacancy centers in diamond provide a spin-based qubit system with long coherence time even at room temperature, making them suitable ambient-condition quantum sensors for quantities including electromagnetic fields, temperature, and rotation. The optically addressable level structures of NV spins allow transduction of spin information onto light-field intensity. The sub-optimal readout fidelity of conventional fluorescence measurement remains a significant drawback for room-temperature ensemble sensing. Here, we discuss nanophotonic interfaces that provide opportunities to achieve near-unity readout fidelity based on IR absorption via resonantly enhanced spin-optic coupling. Spin-coupled resonant nanophotonic devices are projected to particularly benefit applications that utilize micro- to nanoscale sensing volume and to outperform present methods in their volume-normalized sensitivity.
Phonon modes at microwave frequencies can be cooled to their quantum ground state using conventional cryogenic refrigeration, providing a convenient way to study and manipulate quantum states at the single phonon level. Phonons are of particular interest because mechanical deformations can mediate interactions with a wide range of different quantum systems, including solid-state defects, superconducting qubits, and optical photons when using optomechanically active constructs. Phonons, thus, hold promise for quantum-focused applications as diverse as sensing, information processing, and communication. Here, we describe a piezoelectric quantum bulk acoustic resonator (QBAR) with a 4.88 GHz resonant frequency, which, at cryogenic temperatures, displays large electromechanical coupling strength combined with a high intrinsic mechanical quality factor, Q i ≈ 4.3 × 10 4 . Using a recently developed flip-chip technique, we couple this QBAR resonator to a superconducting qubit on a separate die and demonstrate the quantum control of the mechanics in the coupled system. Furthermore, this approach promises a facile and flexible experimental approach to quantum acoustics and hybrid quantum systems.
Strong light–matter interaction in cavity environments is emerging as a promising approach to control chemical reactions in a non-intrusive and efficient manner. The underlying mechanism that distinguishes between steering, accelerating, or decelerating a chemical reaction has, however, remained unclear, hampering progress in this frontier area of research. We leverage quantum-electrodynamical density-functional theory to unveil the microscopic mechanism behind the experimentally observed reduced reaction rate under cavity induced resonant vibrational strong light-matter coupling. We observe multiple resonances and obtain the thus far theoretically elusive but experimentally critical resonant feature for a single strongly coupled molecule undergoing the reaction. While we describe only a single mode and do not explicitly account for collective coupling or intermolecular interactions, the qualitative agreement with experimental measurements suggests that our conclusions can be largely abstracted towards the experimental realization. Specifically, we find that the cavity mode acts as mediator between different vibrational modes. In effect, vibrational energy localized in single bonds that are critical for the reaction is redistributed differently which ultimately inhibits the reaction.
Nanostructured devices that exploit the hybrid-polariton resonances arising from coupling among photons, phonons, and plasmons are subjects of research directed toward the development of infrared-spectroscopic sensors for measuring extremely small quantities of molecules of interest. The spectroscopic techniques in question are surface enhanced Raman scattering (SERS) and surface enhanced infrared absorption (SEIRA). An important intermediate goal of this research is to increase the sensitivity achievable by these techniques. The basic idea of the approach being followed in this research is to engineer nanostructured devices and thereby engineer their hybrid-polariton resonances to concentrate infrared radiation incident upon their surfaces in such a manner as to increase the absorption of the radiation for SEIRA and measure the frequency shifts of surface vibrational modes. The underlying hybrid-polariton-resonance concept is best described by reference to experimental devices that have been built and tested to demonstrate the concept. The nanostructure of each such device includes a matrix of silicon carbide particles of approximately 1 micron in diameter that are supported on a potassium bromide (KBr) or poly(tetrafluoroethylene) [PTFE] window. These grains are sputter-coated with gold grains of 40-nm size (see figure). From the perspective of classical electrodynamics, in this nanostructure, that includes a particulate or otherwise rough surface, the electric-field portion of an incident electromagnetic field becomes concentrated on the particles when optical resonance conditions are met. Going beyond the perspective of classical electrodynamics, it can be seen that when the resonance frequencies of surface phonons and surface plasmons overlap, the coupling of the resonances gives rise to an enhanced radiation-absorption or -scattering mechanism. The sizes, shapes, and aggregation of the particles determine the frequencies of the resonances. Hence, the task of designing a nanostructure to exhibit the desired radiation-absorption properties translates, in large part, to selecting particle sizes and shapes to obtain the desired enhanced coupling of energy from photons to plasmons and phonons. To broaden the spectral region(s) of enhanced absorption, one would select a distribution of particle sizes and shapes.
An optical system, device, and method that are capable of generating high-order Bessel beams and determining the orbital angular momentum of at least one of the photons of a Bessel beam are provided. The optical system and device include a tapered waveguide having an outer surface defined by a diameter that varies along a longitudinal axis of the waveguide from a first end to an opposing second end. The optical system and device include a resonator that is arranged in optical communication with the first end of the tapered waveguide such that an evanescent field emitted from (i) the waveguide can be coupled with the resonator, or (ii) the resonator can be coupled with the waveguide.
In this work we present a systematic study of the dependence of the gap mode tip-enhanced Raman scattering (TERS) response of the mono- and bi-layer WS 2 and MoS 2 on silver as a function of the excitation laser energy in a broad spectral range from 473nm to 830 nm. For this purpose, we collected consecutive TERS maps of the same area in the sample containing mono-and bi-layer regions with the same TERS probe with 6 different excitation lasers. To decrease the number of collected TERS maps, we used for the first time to the best of our knowledge, concurrent excitation and collection with two lasers simultaneously. We found that the E 2g /A 1g peak intensity ratio for the bilayer WS 2 @Ag and the ratio of the A’/A 1g peak intensity of the out-of-plane mode for the mono- and the bilayer, change in a significantly non-monotonous way as the excitation laser energy is swept from 1.58 eV to 2.62 eV. The former ratio increases at energies corresponding to A and B excitons (~2.0 eV and 2.4 eV correspondingly) in bilayer WS 2 . The absolute intensity of the A’ peak in the monolayer, and correspondingly the A’/A 1g ratio, is surprisingly high at lower excitation energies, but dips dramatically at the energy corresponding to the A exciton, being restored partially in between A and B excitons, but still showing the descending trend as the excitation laser energy increases. A somewhat similar picture was observed in mono- and bi-layers of MoS 2 @Ag, though the existing set of excitation lasers did not match the excitonic profile of this material as nicely as for the case of WS 2 . We attribute the observed behavior to the presence of intermediate (Fano resonance) or strong (Rabi splitting) coupling between the excitons in transition metal dichalcogenides (TMDs) and the plasmons in the tip-substrate nanocavity. This is akin to the so-called Fano (Rabi) transparency experimentally observed in far field scattering from transition metal dichalcogenides between two plasmonic metals. The possibility of the formation of intermediate/strong coupling between the excitonic resonances in TMDs and the nanocavity re-evaluates the role of various resonances in the gap-mode TERS and should become an important factor to be considered by TERS practitioners during planning the experiments. Lastly, based on observed phenomena and its explanation, we propose the “ideal” substrate for efficient TERS and tip enhanced photoluminescence (TEPL) measurements.
We introduce a new hybrid qubit consisting of a Majorana qubit interacting with a transmon longitudinally coupled to a resonator. To do so, we equip the longitudinal transmon qubit with topological quasiparticles, supported by an array of heterostructure nanowires, and derive charge- and phase-based interactions between the Majorana qubit and the resonator and transmon degrees of freedom. Inspecting the charge coupling, we demonstrate that the Majorana self-charging can be eliminated by a judicious choice of charge offset, thereby maintaining the Majorana degeneracy regardless of the quasiparticles spatial arrangement and parity configuration. We perform analytic and numerical calculations to derive the effective qubit-qubit interaction elements and discuss their potential utility for state readout and quantum error correction. Further, we find that select interactions depend strongly on the overall superconducting parity, which may provide a direct mechanism to characterize deleterious quasiparticle poisoning processes.
A laser apparatus having a pump laser device for producing pump laser energy upon being excited is disclosed. The pump laser device has a resonating cavity for oscillating and amplifying the pump laser energy. A source laser device is used for producing source laser energy upon being excited by the pump laser energy. The source laser device has a resonating cavity for oscillating and amplifying the source laser energy. The source laser's resonating cavity is coupled within a portion of the pump laser's resonating cavity.
Bulk acoustic resonators support robust, long-lived mechanical modes, capable of coupling to various quantum systems. In separate works, such devices have achieved strong coupling to both superconducting qubits, via piezoelectricity, and optical cavities, via Brillouin interactions. In this work, we present a hybrid microwave–optical platform capable of coupling to bulk acoustic waves through cavity-enhanced piezoelectric and photoelastic interactions. The modular, tunable system achieves fully resonant and well-mode-matched interactions among a 3D microwave cavity, a high-frequency bulk acoustic resonator, and a Fabry–Perot cavity. We realize this piezo–Brillouin interaction in x-cut quartz, demonstrating the potential for strong optomechanical interactions and high cooperativity using optical cavity enhancement. We further show how this device functions as a bidirectional electro–opto–mechanical transducer, with transduction efficiency exceeding 10 − <#comment/> 8 , and a feasible path towards unity conversion efficiency. The high optical sensitivity and ability to apply a large resonant microwave field in this system also offers a tool for probing anomalous electromechanical couplings, which we demonstrate by investigating (nominally centrosymmetric) C a F 2 and revealing a parasitic piezoelectricity of 83 am/V. Such studies are an important topic for emerging quantum technologies, and highlight the versatility of this hybrid platform.
Fixed-frequency superconducting qubits demonstrate remarkable success as platforms for stable and scalable quantum computing. Cross-resonance gates have been the workhorse of fixed-coupling, fixed-frequency superconducting processors, leveraging the entanglement generated by driving one qubit resonantly with a neighbor’s frequency to achieve high-fidelity, universal controlled- () gates. Here, we use on-resonant and off-resonant microwave drives to go beyond cross-resonance, realizing natively interesting two-qubit gates that are not equivalent to gates. In particular, we implement and benchmark native i , , i SWAP , and b gates; in fact, any SU ( 4 ) unitary can be achieved using these techniques. Furthermore, we apply these techniques for an efficient construction of the B gate: a perfect entangler from which any two-qubit gate can be reached in only two applications. We show that these native two-qubit gates are better than their counterparts compiled from cross-resonance gates. We elucidate the resonance conditions required to drive each two-qubit gate and provide a novel frame tracking technique to implement them in Qiskit. Published by the American Physical Society 2024
Nuclear magnetic resonance of phosphorus compounds, discussing signs of spin-spin couplings in dimethylphosphine and methylphosphine
We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.
We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.
Linking superconducting quantum devices to optical fibers via microwave-optical quantum transducers may enable large-scale quantum networks. For this application, transducers based on the Pockels electro-optic (EO) effect are promising for their direct conversion mechanism, high bandwidth, and potential for low-noise operation. However, previously demonstrated EO transducers require large optical pump power to overcome weak EO coupling and reach high efficiency. Here, we create an EO transducer in thin-film lithium niobate, a platform that provides low optical loss and strong EO coupling. We demonstrate on-chip transduction efficiencies of up to and of optical pump power. The transduction efficiency can be improved by further reducing the microwave resonator’s piezoelectric coupling to acoustic modes, increasing the optical resonator quality factor to previously demonstrated levels, and changing the electrode geometry for enhanced EO coupling. We expect that with further development, EO transducers in thin-film lithium niobate can achieve near-unity efficiency with low optical pump power.