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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Copper-Based OHMIC Contracts for the Si/SiGe Heterojunction Bipolar Transistor Structure

Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.

Das, Kalyan↗
DOE OSTI2023

Exploiting Fixed Charge at Selective Contacts for Silicon Photovoltaics

The goal of this work was to examine and exploit fixed interface charges in ultra-thin (0-3 nm thickness) tunnel dielectric layers sandwiched between silicon and selective contact metal oxides (molybdenum oxide, MoO x , titanium oxide, TiO 2 ). Specifically, the interface fixed charge was varied by changing processing conditions and materials over a wide range and the effect on the current-voltage behavior and the Schottky barrier height was quantified. In budget period 1 (year 1), the objective was to grow aluminum oxide tunnel layers with quantified fixed charge over a range of ~1E12 to ~-2E12 cm -2 and combine these with MoO x and TiO 2 layers on Czochralsi (CZ) mono p- and n-Si, respectively. We sought conditions that maximize fixed charge and minimize Schottky barrier height to MoO x contacts to p-Si. This objective, along with investigating the effects of silicon surface terminations, occupied the majority of the project timeline (Q1-Q8) due to complications with high specific contact resistivity values. In the last two quarters of the project period, the objective was to insert HfO2 layers between Si and aluminum oxide layers to quench the fixed charge for layers with otherwise identical thermal history. Another objective was to lower the barrier height at TiO 2 -based contacts on n-type Si, but that was never investigated completely.

14 SOLAR ENERGY↗
DOE OSTI2020

Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer which otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable bandedge spectrum filtering. Three components required development to enable this device: 1) a lattice-mismatched 1.2 eV AlGaInAs junction, 2) a metamorphic contact layer grown after the graded buffer, and 3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInP:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150 °C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance, and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Inverted Metamorphic AlGaInAs/GaInAs Tandem Thermophotovoltaic Cell Designed for Thermal Energy Grid Storage Application

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer that otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable band edge spectrum filtering. Three components required development to enable this device: (1) a lattice-mismatched 1.2 eV AlGaInAs junction, (2) a metamorphic contact layer grown after the graded buffer, and (3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly, we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInAs:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150°C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

25 ENERGY STORAGE↗
DOE OSTI2020

Enabling Efficiencies > 22.5% with Metal Oxide Passivating Contacts using Low-Cost Spatial Atomic Layer Deposition (Final Technical Report)

In this project, the University of Central Florida (UCF) worked to both increase module efficiency and reduce manufacturing cost by driving demonstrated lab-scale passivating contact technology using materials and processes compatible with high-volume manufacturing for crystalline silicon (c-Si) photovoltaic (PV) cells. Passivating contacts have garnered significant attention in recent years. They provide a means of suppressing contact recombination, a loss mechanism that limits the performance of industrially relevant cell architectures like Al back surface field (Al-BSF) cells and passivated emitter and rear cells (PERC). Most of the development of passivating contact technology has focused on the use of doped amorphous silicon or doped polysilicon contacts, but both suffer from parasitic optical absorption amongst other issues. Our team developed fully transparent hole-selective heterojunctions, deposited using atomic layer deposition (ALD), and showed how they could be incorporated into c-Si PV cells. The team conducted experiments to understand the process-structure-property relationship of hole-selective oxides, surface passivation oxide materials, and transparent conductive oxides deposited by ALD, and use that understanding to reduce contact recombination, contact resistivity, and parasitic optical absorption within c-Si PV cells. Before getting into the details of the report, we would like to note that COVID-19 has made it more challenging to conduct experimental research at UCF. UCF has a number of mandatory policies in place to ensure social distancing, testing, and contact tracing are all carried out in day-to-day operations. Despite these challenges, we worked diligently to make progress on this project in a manner that was as safe as possible. Over the course of the project, the UCF team and its collaborators have made the following discoveries and developments.

14 SOLAR ENERGY↗
DOE OSTI2021

Design and performance evaluation of a dual-circuit thermal energy storage module for air conditioners

We present experimental results and a validated numerical model of a dual-circuit phase-change thermal energy storage module for air conditioners. The module incorporates a phase-change material encapsulated in compressed expanded natural graphite foam. We used n-tetradecane as the PCM with a transition temperature (~4.5 °C) suitable for air-conditioning applications. Heat exchange to and from the module is accomplished through two fluid loops operating as a heat source and sink embedded inside multiple slabs of the composite material. This dual-circuit design enables easier integration with air-conditioning equipment and provides enhanced flexibility in system operation as compared to the state-of-the-art thermal storage systems. When integrated with an air-conditioner, this design will enable peak-load shaving and enhances operational efficiency. The thermal storage device was designed for a nominal storage capacity of ~ 3.5 kWh. We evaluated the heat transfer and energy storage performance of this device using standalone heat transfer experiments to estimate key thermal resistances and identify design improvements before integration with an air conditioner. The numerical model of the heat exchanger uses a combination of discretized and lumped parameter approaches to maintain a balance between accuracy and computational expense. Our analyses show that the geometric features and integration of fluid tubes are key contributors to the thermal contact resistance between the fluid and the thermal storage material, and consequently, to the overall performance of the thermal storage module. Our standalone experiments also identified important operating scenarios in which this thermal storage module can be used for air-conditioning in buildings.

25 ENERGY STORAGE↗
DOE OSTI2022

Spin injection by spin–charge coupling in proximity induced magnetic graphene

Abstract Within the field of spintronics major efforts are directed towards developing applications for spin-based transport devices made fully out of two-dimensional materials. In this work we present an experimental realization of a spin-valve device where the generation of the spin signal is exclusively attributed to the spin-dependent conductivity of the magnetic graphene resulting from the proximity of an interlayer antiferromagnet, chromium sulfide bromide (CrSBr). We clearly demonstrate that the usage of the conventional air-sensitive 3D magnetic contacts can be fully avoided when graphene/CrSBr heterostructures are employed. Moreover, apart from providing exceptionally long spin relaxation length, the usage of graphene for both generation and transport of the spin allows to automatically avoid the conductivity mismatch between the source and the channel circuits that has to be considered when using conventional low-resistive contacts. Our results address a necessary step in the engineering of spintronic circuitry out of layered materials and precede further developments in the area of complex spin-logic devices. Moreover, we introduce a fabrication procedure where we designed and implemented a recipe for the preparation of electrodes via a damage-free technique that offers an immediate advantage in the fields of air-sensitive and delicate organic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electrolyzer Performance Loss from Accelerated Stress Tests and Corresponding Changes to Catalyst Layers and Interfaces

Stress tests are developed for proton exchange membrane electrolyzers that utilize low catalyst loading, elevated potential, and frequent cycling with square- and triangle-waves to accelerate anode catalyst layer degradation during intermittent operation. Kinetics drive performance losses (ohmic/transport secondary) and are accompanied by decreasing exchange current density, decreasing cyclic voltammetric capacitance, and increasing polarization resistance. Decreased kinetics are likely due to a combination of iridium (Ir) migration into electrochemically inaccessible locations in the anode or membrane, Ir particle growth (supported by X-ray scattering), changes in the extent of the Ir oxidation state (supported by X-ray absorption spectroscopy), and anode catalyst layer reordering. Decreasing catalyst/transport layer contact and catalyst/membrane interfacial tearing may add contact resistances and account for increasing ohmic losses. Performance losses for low and moderate catalyst loading, as well as from accelerated and model wind/solar cycling protocols, were likewise dominated by kinetics but vary in severity. Additionally, accelerated cycling (1 cycle per minute) appears to reasonably accelerate relevant loss mechanisms and can be used to project electrolyzer lifetime from anode deterioration. Ongoing accelerated stress test development and studies into performance loss mechanisms will continue to be critical as electrolysis shifts to intermittent power and low-cost applications.

30 DIRECT ENERGY CONVERSION↗
NASA NTRS2010

A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 C

A novel tungsten-nickel ohmic contact metallization on 4H-SiC and 6H-SiC capable of surviving temperatures as high as 900 C is reported. Preliminary results revealed the following: 1) ohmic contact on n-type 4H-SiC having net doping levels (Nd's) of 1.4 and 2 x 10(exp 19) per cubic centimeter, with specific contact resistances rhosNd's of 7.69 x 10(exp -4) and 5.81 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after rapid thermal annealing (RTA), and 5.9 x 10(exp -3) and 2.51 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after subsequent soak at 900 C for 1 h in argon, and 2) ohmic contact on n- and p-type 6H-SiC having Nd > 2 x 10(exp 19) and Na > 1 x 10(exp 20) per cubic centimeter, with rhosNd = 5 x 10(exp -5) and rhosNa = 2 X 10(exp -4) OMEGA (raised dot) square centimeter, respectively, after RTA, and rhosNd = 2.5 x 10 (exp -5) and rhosNa = 1.5 x 10(exp -4) OMEGA (raised dot) square centimeter after subsequent treatment at 900 C for 1 h in argon, respectively.

Okojie, Robert S.↗
DOE OSTI2020

Deposition pressure dependent structural and optoelectronic properties of ex-situ boron-doped poly-Si/SiO x passivating contacts based on sputtered silicon

Among common methods to form polycrystalline silicon (poly-Si) films for passivating-contact solar cells, physical vapor deposition, in particular sputtering, is the safest one as it does not require any toxic gaseous precursors. One of the critical parameters to control the properties of sputtered silicon films is their deposition pressure. In this work, structural and optoelectronic characteristics of ex-situ boron-doped poly-Si/SiO x passivating contacts, formed from sputtered intrinsic amorphous silicon (a-Si) deposited at different pressures on top of SiO x /c-Si substrates and subjected to a high-temperature boron diffusion step, are investigated. The deposition rate and density of the as-deposited a-Si films increase with reducing pressure. Low-temperature photoluminescence spectra captured from the as-deposited samples at different pressures do not show typical emissions from hydrogenated a-Si. Meanwhile, their Fourier-transform infrared absorption spectra all show Si–H stretching modes, indicating that hydrogen had been initially incorporated into the chemical SiO x layers and eventually hydrogenated the a-Si/SiO x interfaces during the sputtering process. After the high-temperature boron-diffusion step, all hydrogen-related peaks disappear. Lower pressure films (1.5 and 2.5 mTorr) show more consistent improved performance after hydrogen treatments, compared to higher pressure films (4 and 5 mTorr). Overall, the resultant passivating contacts at 2.5 mTorr achieve a low single-side recombination current density Jo of ~9 fA/cm 2 , whereas their contact resistivity is still low at 15 mO cm 2 .

14 SOLAR ENERGY↗
NASA NTRS2017

Thermally-Conductive Metallic Coatings and Applications for Heat Removal on In-Space Cryogenic Vehicles

For large in-space cryogenic upper stages, substantial axial heat removal from a forward skirt by vapor-based heat interception may not be achieved by simple attachment methods unless sufficient thermal conductance from the skirt to the cooling fluid can be achieved. Preferable methods would allow for the addition of the cooling system to existing structure with minimal impact on the structure. Otherwise, significant modification to the basic structural design andor novel and complex attachment mechanisms with high effective thermal conductance are likely to be required. The approach being pursued by evolvable Cryogenics (eCryo) is to increase the thermal performance of a relatively simple attachment system by applying metallic or other thermally conductive material coatings to the mating surface area of the fluid channel where it is attached the skirt wall. The expectation of candidate materials is that the dramatic increase in conductivity of pure metals at temperatures close to liquid hydrogen vapor temperature will compensate for the reduced actual contact area typical of mechanical joints. Basic contact conductance data at low temperatures for candidate interface materials is required to enable the test approach. A test rig was designed at NASA Glenn Research Center to provide thermal contact resistance testing between small sample coupons coated with conductive material via electron beam evaporation, a low-temperature option that will not affect physical properties of base materials. Average coating thicknesses were 10 k. The test fixture was designed to mount directly to a cryocooler cold head within a vacuum test chamber. The purpose of this test was to determine qualitative contact conductance between various test samples. Results from this effort will be implemented in a sub-scale vapor-based heat interception test, where the applicability for increased heat removal on large structural skirts will be considered.

small scale testing↗
NASA NTRS1990

An analysis of the contact sintering process in III-V solar cells

The possibility of eliminating the gross mechanical changes that take place during sintering while retaining the processes that reduce contact resistivity is investigated. Before considering the electrical aspects, however, it is necessary to understand the relevant metallurgy. As the sintering process proceeds in the InP-Au system, dramatic color changes occur that enable a precise measurement of the kinetics of each step. A detailed insight into the processes that control each stage in the InP-Au interaction has resulted. It is shown that contact sintering in the InP-Au system consists of three consecutive stages, each of which is controlled by a separate mechanism.

Weizer, Victor G.↗
NASA NTRS1990

An analysis of the contact sintering process in III-V solar cells

The possibility of eliminating the gross mechanical changes that take place during sintering while retaining the processes that reduce contact resistivity is investigated. Before considering the electrical aspects, however, it is necessary to understand the relevant metallurgy. As the sintering process proceeds in the InP-Au system, dramatic color changes that enable a precise measurement of the kinetics of each step occur. A detailed insight into the processes that control each stage in the InP-Au interaction has resulted. It is shown that contact sintering in the InP-Au system consists of three consecutive stages, each of which is controlled by a separate mechanism.

Weizer, Victor G.↗
NASA NTRS1988

Electrochemical evaluation of the p-Si/conducting polymer interfacial properties

Results are presented from an experimental investigation of the contact resistance and interfacial properties of a p-Si/conducting polymer interface for solar cell applications. The electronic character of the polymer/semiconductor function is determined by studying the electrochemical behavior of both poly(isothianapthene) (PITN) and polypyrrole (PP) in an acetonitrile solution on p-silicon electrodes. The results obtained indicate that while PITN is intrinsically more conductive than PP, neither passivates surface states nor forms ohmic contact.

Nagasubramanian, G.↗
NASA NTRS2017

Pt: Ti Diffusion Barrier, Interconnect, and Simultaneous Ohmic Contacts to n- and p-type 4H-SiC

We report the initial results of using co-sputtered Pt:Ti 80:20 at. % composition ratio metallization as a diffusion barrier against gold (Au) and oxygen (O), as an interconnect layer, as well as forming simultaneous ohmic contacts to n-and p-type 4H-SiC. Having a single conductor with such combined multi-functional attributes would appreciably reduce the fabrication costs, processing time and complexity that are inherent in the production of SiC based devices. Auger Electron Spectroscopy, Focused Ion Beam-assisted Field Emission Scanning Electron Microscopy and Energy Dispersive Spectroscopy analyses revealed no Au and O migration to the SiC contact surface and minimal diffusion through the Pt:Ti barrier layer after 15 minutes of exposure at 800 °C in atmosphere, thus offering potential long term stability of the ohmic contacts. Specific contact resistance values of 7 x 10(exp -5) and 7.4 x 10(exp -4) Ω-sq.cm were obtained on the n (N(sub d)=7 x 10(exp 18) per cu.cm and p (N(sub a)=2 x 10(exp 20) per cu. cm) -type 4H-SiC, respectively. The resistivity of 75 μΩ-cm was obtained for the Pt:Ti layer that was sandwiched between two SiO2 layers and annealed in pure O ambient up to 900 °C, which offers promise as a high temperature interconnect metallization.

Simultaneous Ohmic Contact↗
DOE OSTI2022

Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices

Alloy scattering in random AlGaN alloys drastically reduces the electron mobility and, therefore, the power-electronics figure of merit. As a result, Al compositions greater than 75% are required to obtain even a twofold increase in the Baliga figure of merit compared to GaN. However, beyond approximately 80% Al composition, donors in AlGaN undergo the DX transition, which makes impurity doping increasingly more difficult. Moreover, the contact resistance increases exponentially with the increase in Al content, and integration with dielectrics becomes difficult due to the upward shift of the conduction band. Atomically thin superlattices of AlN and GaN, also known as digital alloys, are known to grow experimentally under appropriate growth conditions. These chemically ordered nanostructures could offer significantly enhanced figure of merit compared to their random alloy counterparts due to the absence of alloy scattering, as well as better integration with contact metals and dielectrics. In this work, we investigate the electronic structure and phonon-limited electron mobility of atomically thin AlN/GaN digital-alloy superlattices using first-principles calculations based on density-functional and many-body perturbation theory. The bandgap of the atomically thin superlattices reaches 4.8 eV, and the in-plane (out-of-plane) mobility is 369 (452) cm 2 V -1 s -1 . Using the modified Baliga figure of merit that accounts for the dopant ionization energy, here we demonstrate that atomically thin AlN/GaN superlattices with a monolayer sublattice periodicity have the highest modified Baliga figure of merit among several technologically relevant ultra-wide bandgap materials, including random AlGaN, β-Ga 2 O 3 , cBN, and diamond.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Heat transfer model for predicting squib ignition times

A squib ignition model based on transient heat condition from the hot bridgewire to the pyrotechnic is described. No Arrhenius-type chemical reaction is included. Instead, a thermal contact resistance is postulated to exist between the hot bridgewire and the pyrotechnic. Ignition is assumed to occur when a 2.5 micron layer of pyrotechnic next to the bridgewire reaches a characteristic ignition temperature for that pyrotechnic. This model was applied to the JPL squib, which uses a 50 micron (0.002-in.) diameter Tophet A bridgewire to ignite a boron, potassium perchlorate mix. A computer program was utilized that solves the transient heat condition problem with the boundary conditions stipulated by the model. The thermal contact conductance at the interface was determined by trial and error so that the experimentally determined ignition time for one firing condition would be properly predicted by the model. The agreement was quite good for tests run between -129 C and +93.3 C at current levels of 3.5 and 5 A. Axial heat conduction along the bridgewire is shown to be negligible.

Sernas, V.↗
DOE OSTI2024

High-throughput screening of 2D materials identifies p-type monolayer WS2 as potential ultra-high mobility semiconductor

Abstract 2D semiconductors offer a promising pathway to replace silicon in next-generation electronics. Among their many advantages, 2D materials possess atomically-sharp surfaces and enable scaling the channel thickness down to the monolayer limit. However, these materials exhibit comparatively lower charge carrier mobility and higher contact resistance than 3D semiconductors, making it challenging to realize high-performance devices at scale. In this work, we search for high-mobility 2D materials by combining a high-throughput screening strategy with state-of-the-art calculations based on the ab initio Boltzmann transport equation. Our analysis singles out a known transition metal dichalcogenide, monolayer WS 2 , as the most promising 2D semiconductor, with the potential to reach ultra-high room-temperature hole mobilities in excess of 1300 cm 2 /Vs should Ohmic contacts and low defect densities be achieved. Our work also highlights the importance of performing full-blown ab initio transport calculations to achieve predictive accuracy, including spin–orbital couplings, quasiparticle corrections, dipole and quadrupole long-range electron–phonon interactions, as well as scattering by point defects and extended defects.

Chemistry↗